A new resistive material applied to microstructure gas detector

By employing an insulating base layer and a modified composite high-conductivity material outer layer in a microstructured gas detector, combined with microstructure design and self-healing function, the problems of insufficient conductivity and poor radiation resistance of resistive materials are solved, and stable operation of high-performance detectors is achieved.

CN119704814BActive Publication Date: 2026-01-02SHANGHAI JIAOTONG UNIV
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Patent Information

Application Number
CN202510002372.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-01-02
Publication Date
2026-01-02
Estimated Expiration
2045-01-02

AI Technical Summary

Technical Problem

Existing resistive materials for microstructured gas detectors suffer from insufficient conductivity, poor radiation resistance, and poor environmental adaptability, making it difficult to meet the requirements of high-performance detectors.

Method used

It adopts an insulating base layer and a highly conductive outer layer. The highly conductive outer layer is a modified composite of conductive polymer and nanoscale conductive material. The surface of the outer layer is provided with a microstructure layer to enhance the uniformity of the electric field, and a self-healing structure is set inside to achieve self-repair. The material is composed of carbon nanotubes or graphene.

Benefits of technology

It significantly improves the detection sensitivity and temporal resolution of microstructured gas detectors, exhibits excellent radiation resistance and environmental adaptability, and extends the service life of materials.

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Abstract

The application discloses a novel resistive material applied to a microstructure gas detector and relates to the technical field of composite materials, which comprises an insulating base layer and a high-conductivity material outer layer, wherein the high-conductivity material outer layer is composed of a conductive polymer and nanoscale conductive material after modification; a microstructure layer is further arranged on the outer surface of the high-conductivity material outer layer; and a self-repairing structure is further arranged in the high-conductivity material outer layer, wherein the self-repairing structure comprises a plurality of microcapsules uniformly embedded in the high-conductivity material outer layer. The novel resistive material applied to the microstructure gas detector disclosed by the application significantly improves the detection sensitivity and time resolution of the microstructure gas detector, has excellent radiation resistance and environmental adaptability, and solves many defects in the prior art. Through microstructure design and self-repairing function, the material exhibits excellent performance under high particle flow conditions and is suitable for application in the fields of high-energy physics and nuclear medicine.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of composite materials, and particularly relates to a novel resistive material applied to a microstructure gas detector. BACKGROUND

[0002] The microstructure gas detector is widely applied to the fields of high-energy physics, nuclear medicine and environmental monitoring. The resistive material plays a key role in the microstructure gas detector, and influences the sensitivity, time resolution and overall performance of the detector. The existing resistive material applied to the microstructure gas detector is mostly a single material, and has problems of insufficient conductivity, poor radiation resistance and poor environmental adaptability, and is difficult to meet the demand of high-performance detectors.

[0003] In view of this, the present application provides a novel resistive material applied to a microstructure gas detector. SUMMARY

[0004] The present application discloses a novel resistive material applied to a microstructure gas detector, and aims to solve the technical problems in the background.

[0005] In order to achieve the above-mentioned purpose, the present application adopts the following technical scheme:

[0006] The novel resistive material applied to the microstructure gas detector comprises an insulating base layer and a high-conductivity material outer layer, and the high-conductivity material outer layer is composed of a conductive polymer and a nano-scale conductive material after modification.

[0007] In a preferred scheme, the conductive polymer is any one of polypyrrole or polyaniline.

[0008] In a preferred scheme, the nano-scale conductive material is any one of carbon nanotube or graphene.

[0009] In a preferred scheme, the outer surface of the high-conductivity material outer layer is further provided with a microstructure layer, which is used for enhancing the electric field uniformity of the material and improving the electron collection efficiency.

[0010] In a preferred scheme, the microstructure layer is formed by 3D printing or laser etching technology on the surface of the high-conductivity material outer layer to form a micron-level and nano-level concave-convex structure, which can ensure the consistent performance of each microstructure gas detector.

[0011] In a preferred scheme, the inside of the high-conductivity material outer layer is further provided with a self-repairing structure, which is used for releasing a repairing agent to realize self-repairing and prolong the service life of the material after the material is damaged.

[0012] In a preferred scheme, the self-repairing structure comprises a plurality of microcapsules evenly embedded in the outer layer of high-conductivity material, the microcapsules being filled with a material repairing agent, and the self-repairing mechanism can maintain the stability of the material in a high-radiation environment, ensuring long-term effective operation of the detector.

[0013] In a preferred scheme, the preparation method of the outer layer of high-conductivity material comprises the following steps:

[0014] S1, carbon nanotubes / graphene and organic beta nucleating agent-aryldicarboxylic acid amide of aryl are added to a round-bottom flask containing o-dichlorobenzene, ultrasonic treatment is performed at room temperature for 2h, and then the mixture is placed in an ice water bath at 0°C for 0.5h, and then filtered with a 0.22μm microporous filter to obtain organic beta nucleating agent modified carbon nanotubes / graphene, which is then ultrasonically dispersed in a xylene solvent to obtain a dispersion liquid;

[0015] S2, polypyrrole / polyaniline is dissolved in xylene solvent at 140°C under stirring, and then the dispersion liquid in S1 is added dropwise into the hot xylene, and ultrasonic treatment is continuously performed for 3h until most of the xylene solution is volatilized;

[0016] S3, the product obtained in S2 is placed in a vacuum oven at 90°C for vacuum drying for 24h to obtain aryl dicarboxylic acid amide modified carbon nanotube / polypyrrole or polyaniline composite, i.e., the outer layer of high-conductivity material.

[0017] By setting the above modification method, the performance stability of the material under extreme temperature and humidity is improved by combining modified polymers and nanomaterials, and the material can maintain excellent electrical conductivity and detection performance under different environmental conditions.

[0018] As can be seen from the above, the novel resistive material applied to the microstructure gas detector provided by the application significantly improves the detection sensitivity and time resolution of the microstructure gas detector, has excellent radiation resistance and environmental adaptability, and solves many defects in the prior art. Through microstructure design and self-repairing function, the material exhibits excellent performance under high particle flow conditions, and is suitable for application in the fields of high-energy physics and nuclear medicine. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 An explosion structure diagram of the novel resistive material applied to the microstructure gas detector provided by the application.

[0020] Figure 2 The novel resistive material applied to the microstructure gas detector provided by the application Figure 1 A cross-sectional structure diagram.

[0021] In the drawings:

[0022] Insulating base layer; 200, outer layer of highly conductive material; 300, microstructure layer; 400, self-repairing structure. DETAILED DESCRIPTION

[0023] Embodiments of the present application are described in detail below with reference to the attached drawing figures, wherein the same or like reference numerals and characters throughout the figures denote the same or like elements or features. The embodiments described below are exemplary, and are not intended to be limiting. In the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on the orientations or positional relationships as shown in the drawings, and are merely used for convenience in describing the present application and simplifying the description, and are not intended to indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus cannot be construed as limiting the present application. In addition, the terms "first", "second", and the like, are used herein only to describe various elements, and are not used to indicate or imply relative importance or a quantity of the indicated elements. Thus, the features with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, and the meaning of "several" is one or more, unless otherwise explicitly specified and limited.

[0024] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integral connection; can be mechanical connection, can also be electrical connection or can communicate with each other; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0025] In the present application, unless otherwise explicitly specified and limited, "on" or "under" of a first feature to a second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, "on", "above" and "over" of a first feature to a second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the first feature is higher in horizontal height than the second feature. "Under", "below" and "underneath" of a first feature to a second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the first feature is lower in horizontal height than the second feature.

[0026] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplicity, the elements and settings of particular examples in the following description are shown in great detail. Of course, they are merely examples and are presented to provide an enabling description of the application. Also, the present application can refer to, but not limited to, different examples with the same reference numerals and / or the same reference letters, which are for the purpose of simplification and clarity, and do not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those skilled in the art can realize the application of other processes and / or the use of other materials.

[0027] In order to better understand the above technical solutions, the above technical solutions will be described in detail below in combination with the drawings in the specification and specific embodiments.

[0028] With reference to Figure 1 A new type of resistive material applied to microstructure gas detector, comprising an insulating base layer 100 and a high-conductivity material outer layer 200, the high-conductivity material outer layer 200 is composed of a conductive polymer and a nano-scale conductive material after modification.

[0029] Embodiment one

[0030] In a preferred embodiment, the conductive polymer is any one of polypyrrole or polyaniline.

[0031] The nano-scale conductive material is any one of carbon nanotube or graphene.

[0032] The preparation method of the high-conductivity material outer layer 200 comprises the following steps:

[0033] S1, carbon nanotubes / graphene and organic β nucleating agent-aryl aryl dicarboxylic acid amide are added to a round-bottom flask containing o-dichlorobenzene, ultrasonic treatment at room temperature for 2h, then placed in an ice water bath at 0°C for 0.5h, filtered with a 0.22μm microporous filter at this temperature, to obtain organic β nucleating agent modified carbon nanotubes / graphene, which is ultrasonically dispersed in a xylene solvent to obtain a dispersion liquid;

[0034] S2, dissolving polypyrrole / polyaniline in xylene solvent at 140°C under stirring, then adding the dispersion in S1 into the hot xylene, and sonicating for 3h until most of the xylene solvent is evaporated;

[0035] S3, vacuum drying the product in S2 in a vacuum oven at 90°C for 24h. The aryl dicarboxylic acid amide modified carbon nanotube / polypyrrole or polyaniline composite of aryl type is obtained, which is the high conductivity material outer layer 200.

[0036] The combination of modified polymers and nanomaterials improves the performance stability of the material under extreme temperature and humidity, so that the material can maintain excellent electrical conductivity and detection performance under different environmental conditions.

[0037] The outer surface of the high conductivity material outer layer 200 is also provided with a microstructure layer 300, which is used to enhance the uniformity of the electric field of the material and improve the electron collection efficiency.

[0038] The microstructure layer 300 is formed on the surface of the high conductivity material outer layer 200 by 3D printing or laser etching technology to form micron and nanoscale concave-convex structures.

[0039] Nanoscale carbon nanotubes / graphene are used as reinforcing agents to form a high conductivity composite material. Through microstructure design, micron-level grooves are formed on the surface to optimize the electric field distribution.

[0040] Example Two

[0041] On the basis of Example One, and different from Example One,

[0042] The inside of the high conductivity material outer layer 200 is also provided with a self-repairing structure 400, which is used to release a repair agent after the material is damaged to achieve self-repairing and prolong the service life of the material.

[0043] Moreover, the self-repairing mechanism can maintain the stability of the material in a high radiation environment, ensuring the long-term effective operation of the detector.

[0044] The self-repairing structure 400 includes a plurality of microcapsules uniformly embedded in the inside of the high conductivity material outer layer 200, and the inside of the microcapsules is filled with a material repair agent.

[0045] The microcapsules are embedded in the polymer matrix, and experimental results show that the material can recover its electrical conductivity performance in a short time after being damaged.

[0046] In summary, the application provides a new resistive material applied to a microstructure gas detector, which significantly improves the detection sensitivity and time resolution of the microstructure gas detector, has excellent radiation resistance and environmental adaptability, and solves many defects in the prior art. Through microstructure design and self-repairing function, the material exhibits excellent performance under high particle flow conditions, and is suitable for application in high-energy physics and nuclear medicine fields. Furthermore, the resistive material has unique innovation and exclusivity, combines new material combination, microstructure design and self-repairing function, and ensures its uniqueness in the market. The applicant hopes to protect the new resistive material and its application in the microstructure gas detector through the patent, so as to promote the development and application of related technologies.

[0047] The above is only a preferred specific embodiment of the application, but the protection scope of the application is not limited thereto, any person skilled in the art can make equivalent replacement or change according to the technical scheme and inventive concept of the application within the technical range disclosed by the application, which should be covered in the protection scope of the application.

Claims

1. A new resistive material applied to microstructured gas detectors, characterized by, It comprises an insulating base layer (100) and a high-conductivity material outer layer (200) which is composed of a conductive polymer and a nano-scale conductive material after modification; The outer surface of the high-conductivity material outer layer (200) is further provided with a microstructure layer (300) for enhancing the electric field uniformity of the material and improving the electron collection efficiency; The inside of the high-conductivity material outer layer (200) is further provided with a self-repairing structure (400) for releasing a repairing agent to realize self-repairing and prolong the service life of the material after the material is damaged; The microstructure layer (300) is formed on the surface of the high-conductivity material outer layer (200) by using 3D printing or laser etching technology to form a micron and nanometer scale concave-convex structure; The self-repairing structure (400) comprises a plurality of microcapsules uniformly embedded in the inside of the high-conductivity material outer layer (200), and the inside of the microcapsules is filled with a material repairing agent.

2. A novel resistive material for microstructure gas detector as claimed in claim 1, wherein, The conductive polymer is any one of polypyrrole or polyaniline.

3. A novel resistive material for microstructure gas detector as claimed in claim 1, wherein, The nano-scale conductive material is any one of carbon nanotube or graphene.

4. A novel resistive material for microstructure gas detector as claimed in claim 1, wherein, The preparation method of the high-conductivity material outer layer (200) comprises the following steps: S1, carbon nanotube / graphene and organic β nucleating agent-aryl aryl dicarboxylic acid amide are added to a round-bottom flask containing o-dichlorobenzene, ultrasonic treatment is carried out at room temperature for 2h, and then it is placed in an ice water bath at 0°C for 0.5h, and then it is filtered by using a 0.22μm microporous filter membrane to obtain organic β nucleating agent modified carbon nanotube / graphene, which is ultrasonically dispersed in dimethylbenzene solvent to obtain a dispersion liquid; S2, polypyrrole / polyaniline is dissolved in dimethylbenzene solvent at 140°C under stirring, and then the dispersion liquid in S1 is added dropwise into the hot dimethylbenzene, and ultrasonic treatment is carried out for 3h until most of the dimethylbenzene solution is volatilized; S3, the product obtained in S2 is placed in a vacuum oven at 90°C for vacuum drying for 24h to obtain aryl aryl dicarboxylic acid amide modified carbon nanotube / polypyrrole or polyaniline composite, i.e. the high-conductivity material outer layer (200).

Citation Information

Patent Citations

  • High-conductivity composite material and preparation method thereof

    CN101974179A

  • Carbon-based material / polymer composite material and preparation method thereof

    CN104924701A

  • Micro gas-sonser and for manufacturing same

    KR1020150037129A