Czochralski method crystal growth device

Abstract

The embodiment of the invention provides a Czochralski method crystal growth device, and relates to the technical field of crystal preparation. The Czochralski method crystal growth device comprises a furnace body, a crucible, a lifting rotating device, a seed rod adjusting device and a seed rod, wherein the crucible is arranged in the furnace body; the lifting and rotating device comprises a lifting and rotating mechanism and a lifting rod, the lifting and rotating mechanism is arranged above the furnace body, and the lifting rod is connected with the lifting and rotating mechanism and located in the furnace body; the seed crystal rod adjusting device and the seed crystal rod are arranged in the furnace body, and the lifting rod, the seed crystal rod adjusting device and the seed crystal rod are connected in sequence; the lifting rotating mechanism is used for driving the lifting rod to lift or rotate, and the seed rod adjusting device is used for driving the seed rod to move relative to the crucible. The seed crystal rod can be directly adjusted in the furnace body, the problem of deviation of the seed crystal rod is solved, and the working efficiency and the crystal growth efficiency are improved; and the conical heat preservation cover is arranged, so that the uniformity and the symmetry of a temperature field can be improved, and the crystal growth quality is improved.

Description

Technical Field

[0001] The invention relates to the technical field of crystal preparation, and in particular to a Czochralski crystal growth device. Background Art

[0002] The Czochralski method, also known as the Czochralski method, is a traditional single crystal growth method for preparing large-size, high-quality single crystals from a melt. When growing single crystals using the Czochralski method, the crystal raw material is heated and melted in a crucible, the temperature distribution in the furnace is controlled, and the seed crystal is immersed in the melt so that there is a suitable temperature gradient between the seed crystal and the melt. The seed crystal rod is pulled and rotated at a certain rate through a mechanical device, so that the melt continuously crystallizes at the solid-liquid interface.

[0003] However, external vibrations or the operation of mechanical structures may cause the growth of the crystal to shift. During the actual crystal growth process, the temperature generally needs to be heated to one or two thousand degrees. If the seed rod shifts during the growth process, the experiment needs to be stopped. After the temperature drops back to room temperature, the furnace needs to be opened to adjust the seed rod. After adjustment, the furnace needs to be reinstalled and the temperature needs to be raised to continue crystal growth. This process will significantly reduce work efficiency and crystal growth efficiency. Summary of the invention

[0004] The object of the present invention is to provide a Czochralski crystal growth device, which can directly adjust the seed crystal rod in the furnace body to solve the problem of its deviation, without the need to open the furnace and reload the furnace, thereby improving work efficiency and crystal growth efficiency.

[0005] The embodiment of the present invention is achieved as follows:

[0006] In a first aspect, the present invention provides a Czochralski crystal growth device, comprising:

[0007] Furnace body;

[0008] A crucible, wherein the crucible is disposed in the furnace body;

[0009] A lifting and rotating device, the lifting and rotating device comprising a lifting and rotating mechanism and a lifting rod, the lifting and rotating mechanism is arranged above the furnace body, the lifting rod is connected to the lifting and rotating mechanism and is located in the furnace body;

[0010] A seed crystal rod adjusting device and a seed crystal rod, wherein the seed crystal rod adjusting device and the seed crystal rod are both arranged in the furnace body, and the lifting rod, the seed crystal rod adjusting device and the seed crystal rod are connected in sequence;

[0011] The lifting and rotating mechanism is used to drive the lifting rod to rise and fall or rotate, and the seed crystal rod adjusting device is used to drive the seed crystal rod to move relative to the crucible.

[0012] In an optional embodiment, the seed rod adjustment device includes a seed rod adjustment mechanism and a seed rod clamp, and the lifting rod, the seed rod adjustment mechanism, the seed rod clamp and the seed rod are connected in sequence;

[0013] The seed rod adjustment mechanism is used to drive the seed rod clamp to move relative to the crucible.

[0014] In an optional embodiment, the seed crystal rod adjustment mechanism includes a first slide rail, a first slider and a first driving member, the first slide rail is connected to an end of the lifting rod away from the lifting and rotating mechanism, the first slider is slidably disposed on the first slide rail, and the seed crystal rod clamp is connected to the first slider;

[0015] The first driving member is used to drive the first sliding block to move relative to the first sliding rail.

[0016] In an optional embodiment, the first sliding block is slidably disposed on the first sliding rail along a first direction;

[0017] The seed rod adjustment mechanism further includes a second slide rail, a second slider and a second driving member, wherein the second slide rail is connected to the first slider, the second slider is slidably disposed on the first slide rail along a second direction, the seed rod clamp is connected to the second slider, and the second driving member is used to drive the second slider to move relative to the second slide rail; the lifting and rotating mechanism is spaced apart from the crucible along a third direction;

[0018] The first direction, the second direction and the third direction are perpendicular to each other.

[0019] In an optional embodiment, the seed rod adjustment device further includes a universal ball head, which is located between the seed rod adjustment mechanism and the seed rod clamp, and the universal ball head is connected to both the seed rod adjustment mechanism and the seed rod clamp.

[0020] In an optional embodiment, the Czochralski crystal growth device further includes a heat-insulating cover, which is disposed in the furnace body and covers the opening of the crucible to form a crystal growth chamber between the heat-insulating cover and the crucible;

[0021] Wherein, the heat-insulating cover is located between the lifting and rotating mechanism and the crucible, and the lifting rod is penetrated through the heat-insulating cover and extends into the crystal growth chamber.

[0022] In an optional embodiment, the heat-insulating cover is conical in shape.

[0023] In an optional embodiment, the Czochralski crystal growth device further includes a temperature regulating device, which is disposed in the furnace body and is used to regulate the temperature in the heat-insulating cover.

[0024] In an optional embodiment, the temperature regulating device includes a heating element and a lifting mechanism, the heating element is arranged in the furnace body and located on one side of the heat preservation cover, the lifting mechanism is connected to the heating element and is used to drive the heating element to move relative to the heat preservation cover.

[0025] In an optional embodiment, the number of the heating elements and the lifting mechanisms are both plural, the plurality of heating elements are arranged at intervals along the circumference of the heat-insulating cover, and the plurality of lifting mechanisms are connected to the plurality of heating elements in a one-to-one correspondence.

[0026] The beneficial effects of the embodiments of the present invention include:

[0027] The crystal growth device of the Czochralski method comprises a furnace body, a crucible, a pulling and rotating device, a seed crystal rod adjusting device and a seed crystal rod, wherein the crucible is arranged in the furnace body; the pulling and rotating device comprises a pulling and rotating mechanism and a pulling rod, wherein the pulling and rotating mechanism is arranged above the furnace body, and the pulling rod is connected to the pulling and rotating mechanism and is located in the furnace body; the seed crystal rod adjusting device and the seed crystal rod are both arranged in the furnace body, and the pulling rod, the seed crystal rod adjusting device and the seed crystal rod are connected in sequence; wherein the pulling and rotating mechanism is used to drive the lifting rod to rise, fall or rotate, and the seed crystal rod adjusting device is used to drive the seed crystal rod to move relative to the crucible.

[0028] That is to say, during the preliminary loading of the furnace body and the process of heating the crucible for crystal growth, the position of the seed crystal rod can be adjusted in real time in the furnace body through the seed crystal rod adjustment device so that it is located at the center of the temperature field of the crucible, ensuring that the crystal does not shift during the growth process. There is no need to open the furnace and reload the furnace, thereby improving work efficiency and crystal growth efficiency; and it also makes the direction of the grown crystal the same as that of the seed crystal, thereby improving the quality of the grown crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0030] Figure 1 A schematic diagram of the structure of a Czochralski crystal growth device provided in an embodiment of the present invention;

[0031] Figure 2A schematic diagram of the assembly between the lifting rod, the seed rod adjustment device and the seed rod provided in an embodiment of the present invention.

[0032] Icons: 100-crystal growth device using the Czochralski method; 10-furnace body; 20-crucible; 30-lifting and rotating device; 31-lifting and rotating mechanism; 32-lifting rod; 40-seed crystal rod adjustment device; 41-seed crystal rod adjustment mechanism; 411-first slide rail; 412-first slider; 413-second slide rail; 414-second slider; 42-seed crystal rod clamp; 43-universal ball head; 50-seed crystal rod; 60-insulation cover; 70-crystal growth chamber; 80-temperature regulating device; 81-heating element; 82-lifting mechanism; 91-insulation layer; 92-induction heating coil; 200-melt; 300-growing crystal. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0034] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0036] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0037] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0038] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0039] As described in the background technology, when growing single crystals by the Czochralski method, the crystal raw material is heated and melted in a crucible, the temperature distribution in the furnace is controlled, and the seed crystal is immersed in the melt so that there is a suitable temperature gradient between the seed crystal and the melt, and the crystal is pulled and rotated at a certain rate, so that the melt is continuously crystallized at the solid-liquid interface. However, external vibrations or the operation of the mechanical structure may cause the growth of the crystal to shift. In the actual growth process of the crystal, the temperature generally needs to be heated to one or two thousand degrees. If the seed crystal rod shifts during the growth process, the experiment needs to be stopped, and the temperature is lowered to room temperature, and the furnace is opened to adjust the seed crystal rod. After the adjustment, the furnace is reloaded to continue to heat up for crystal growth. This process will significantly reduce the work efficiency and crystal growth efficiency.

[0040] Based on this, please refer to Figure 1 and Figure 2 An embodiment of the present invention provides a Czochralski crystal growth device 100, which can effectively improve the above-mentioned technical problems, that is, it can directly adjust the seed rod 50 in the furnace body 10 to solve the problem of its offset, without the need to open the furnace and reload the furnace, thereby improving work efficiency and crystal growth efficiency.

[0041] It should be noted that the first direction mentioned in the following content is Figure 1 and Figure 2 The X direction is shown in the figure, and the second direction is Figure 1 and Figure 2 The Y direction is shown in the figure, and the third direction is Figure 1 and Figure 2 The Z direction is shown in FIG. The Czochralski crystal growth apparatus 100 will be described in detail below.

[0042] Please refer to Figure 1 , Figure 1 The schematic diagram of the structure of the Czochralski crystal growth device 100 provided in this embodiment is shown in FIG. Figure 1The crystal growth device 100 using the Czochralski method includes a furnace body 10, a crucible 20, a pulling and rotating device 30, a seed crystal rod adjusting device 40 and a seed crystal rod 50. The crucible 20 is arranged in the furnace body 10; the pulling and rotating device 30 includes a pulling and rotating mechanism 31 and a pulling rod 32. The pulling and rotating mechanism 31 is arranged above the furnace body 10, and the pulling rod 32 is connected to the pulling and rotating mechanism 31 and is located in the furnace body 10; the seed crystal rod adjusting device 40 and the seed crystal rod 50 are both arranged in the furnace body 10, and the pulling rod 32, the seed crystal rod adjusting device 40 and the seed crystal rod 50 are connected in sequence; wherein, the pulling and rotating mechanism 31 is used to drive the lifting rod 32 to rise, fall or rotate, and the seed crystal rod adjusting device 40 is used to drive the seed crystal rod 50 to move relative to the crucible 20.

[0043] That is to say, during the preliminary loading of the furnace body 10 and the heating of the crucible 20 for crystal growth, the position of the seed rod 50 can be adjusted in real time in the furnace body 10 through the seed rod adjustment device 40 so that it is located at the center of the temperature field of the crucible 20, thereby ensuring that the crystal does not shift during the growth process and eliminating the need to open the furnace and reload the furnace, thereby improving work efficiency and crystal growth efficiency; and also making the direction of the grown crystal the same as that of the seed crystal, thereby improving the quality of the grown crystal 300.

[0044] like Figure 1 As shown, the lifting and rotating mechanism 31 can drive the lifting rod 32 to lift and rotate, and at the same time drive the seed crystal rod adjustment device 40 and the seed crystal rod 50 to lift and rotate, so as to achieve a certain rate of lifting and rotation of the melt 200 set in the crucible 20, and continuously crystallize at the solid-liquid interface to form a growing crystal 300. The seed crystal rod adjustment device 40 can adjust the positional relationship between the seed crystal rod 50 and the crucible 20, that is, adjust the positional relationship between the seed crystal rod 50 and the center of the melt 200 or the center of the growing crystal 300, in order to make the seed crystal rod 50 always maintain the center position of the temperature field in the growth environment during the rotation and lifting process, so as to improve the uniformity and symmetry of the temperature field during the crystal growth process, and then ensure the quality of crystal growth.

[0045] It should be noted that, for those skilled in the art, it is easy to know that the lifting and rotating mechanism 31 can achieve the lifting and rotating movement of the lifting rod 32 through the cooperation of the lifting motor and the rotating motor, which is not described in detail in this embodiment.

[0046] Specifically, please refer to Figure 2 , Figure 2 The assembly diagram of the lifting rod 32, the seed rod adjustment device 40 and the seed rod 50 provided in this embodiment is combined with Figure 1 and Figure 2The seed rod adjustment device 40 includes a seed rod adjustment mechanism 41 and a seed rod clamp 42. The lifting rod 32, the seed rod adjustment mechanism 41, the seed rod clamp 42 and the seed rod 50 are connected in sequence; the seed rod adjustment mechanism 41 is used to drive the seed rod clamp 42 to move relative to the crucible 20.

[0047] It is easy to understand that the seed rod adjustment mechanism 41 can drive the seed rod clamp 42 to move, thereby driving the seed rod 50 to move, thereby solving the problem of seed rod 50 offset. The seed rod clamp 42 is used to clamp the seed rod 50 to ensure the stability of the seed rod 50 during the rotation and pulling process, and also to ensure its stability during the movement relative to the crucible 20, thereby improving the quality of crystal growth.

[0048] Furthermore, the seed rod adjustment mechanism 41 includes a first slide rail 411, a first slider 412 and a first driving member (not shown in the figure), the first slide rail 411 is connected to one end of the lifting rod 32 away from the lifting and rotating mechanism 31, the first slider 412 is slidably disposed on the first slide rail 411, and the seed rod clamp 42 is connected to the first slider 412; the first driving member is used to drive the first slider 412 to move relative to the first slide rail 411.

[0049] That is, the first slider 412 is driven to move by the first driving member, thereby driving the seed rod clamp 42 and the seed rod 50 to move back and forth on the first slide rail 411 as a whole, so as to adjust the position of the seed rod 50 .

[0050] It should be noted that the first slider 412 slides on the first slide rail 411 to move the seed rod 50 back and forth in one direction. In order to improve the adjustment accuracy of the seed rod 50 and achieve adjustment at more different positions, in the present embodiment, the first slider 412 is slidably arranged on the first slide rail 411 along the first direction; the seed rod adjustment mechanism 41 also includes a second slide rail 413, a second slider 414 and a second driving member (not shown in the figure), the second slide rail 413 is connected to the first slider 412, the second slider 414 is slidably arranged on the first slide rail 411 along the second direction, the seed rod clamp 42 is connected to the second slider 414, and the second driving member is used to drive the second slider 414 to move relative to the second slide rail 413; the lifting and rotating mechanism 31 and the crucible 20 are spaced apart along the third direction; wherein the first direction, the second direction and the third direction are perpendicular to each other.

[0051] like Figure 2As shown, specifically in the present embodiment, a cross slide structure can be formed between the first slide rail 411, the first slider 412, the second slide rail 413 and the second slider 414. By sliding the first slider 412 on the first slide rail 411, the second slide rail 413, the second slider 414, the seed rod clamp 42 and the seed rod 50 can be driven to move back and forth in the first direction as a whole; at the same time, by driving the second slider 414 to move through the second driving member, the seed rod clamp 42 and the seed rod 50 can be further moved back and forth in the second direction as a whole, thereby realizing the adjustment of more positions of the seed rod 50, further improving the adjustment accuracy, and thus further improving the quality of crystal growth.

[0052] It should be noted that the first driving member and the second driving member can be motors. In the actual crystal growth process, the vibrations generated by the external environment and the vibrations generated by the operation of the growth device itself have little effect on the offset of the seed rod 50. By driving the motor, the adjustment of the return amount can be more accurately guaranteed. Of course, in other embodiments, the first driving member and the second driving member can also be other forms of driving structures such as cylinders or hydraulic cylinders.

[0053] In the actual production process, after the seed rod clamp 42 clamps the seed rod 50, or is affected by other factors in the growth process, the seed rod 50 may have a certain deflection and cannot maintain a completely plumb state. This may also cause the seed rod 50 to become eccentric during rotation, thereby affecting the growth of the crystal.

[0054] In order to solve the deflection problem of the seed crystal rod 50, please continue to combine Figure 2 The seed rod adjustment device 40 further includes a universal ball head 43, which is located between the seed rod adjustment mechanism 41 and the seed rod clamp 42, and is connected to both the seed rod adjustment mechanism 41 and the seed rod clamp 42. Specifically, in this embodiment, the universal ball head 43 is located between the second slider 414 and the seed rod clamp 42, and is connected to both the second slider 414 and the seed rod clamp 42.

[0055] Through the universal rotation of the universal ball head 43, it can be ensured that the seed rod 50 is always in a plumb state without eccentricity. That is, the universal ball head 43 can solve the problem of deflection of the seed rod 50, and at the same time, the seed rod adjustment mechanism 41 can solve the problem of displacement of the seed rod 50. With the cooperation of the two, it can be ensured that during the operation, the seed rod 50 always rotates in the direction of the center of the melt 200 or the growing crystal 300, and will not draw a circle on the solid-liquid surface (both deflection and displacement will draw a circle), thereby ensuring that the crystal is heated evenly and further improving the quality of crystal growth.

[0056] Please continue to combine Figure 1In order to ensure the temperature stability of the crystal during the pulling and rotating process, the Czochralski crystal growth device 100 also includes a heat-insulating cover 60, which is arranged in the furnace body 10 and covers the opening of the crucible 20 to form a crystal growth chamber 70 between the crucible 20; wherein the heat-insulating cover 60 is located between the pulling and rotating mechanism 31 and the crucible 20, and the pulling rod 32 is passed through the heat-insulating cover 60 and extends into the crystal growth chamber 70.

[0057] Specifically in this embodiment, the shape of the heat preservation cover 60 is conical. It should be noted that the conical heat preservation cover 60 is symmetrically arranged, which can make the temperature field in the crystal growth chamber 70 symmetrical and more uniform. It should be noted that the convection of the traditional heat preservation cover near the two sides of the crystal is dense, and the convection above the crystal is poor, while the side of the heat preservation cover 60 of this embodiment is inclined, which can increase the air convection above the crystal to a certain extent, making the temperature field in the entire crystal growth chamber 70 more uniform.

[0058] Moreover, in the present embodiment, a mounting hole is provided at the conical top of the heat preservation cover 60, and the lifting rod 32 is passed through the mounting hole. By slanting the side of the conical heat preservation cover 60, the opening area of ​​the mounting hole can also be reduced, thereby reducing the temperature loss of the airflow, thereby improving the growth stability of the crystal, and further ensuring the quality of crystal growth.

[0059] Furthermore, in order to reduce the temperature gradient and ensure the growth stability of the crystal, in this embodiment, the Czochralski crystal growth device 100 also includes a temperature regulating device 80 , which is disposed in the furnace body 10 and is used to regulate the temperature in the heat preservation cover 60 .

[0060] Specifically, the temperature regulating device 80 includes a heating element 81 and a lifting mechanism 82 . The heating element 81 is arranged in the furnace body 10 and is located on one side of the heat preservation cover 60 . The lifting mechanism 82 is connected to the heating element 81 and is used to drive the heating element 81 to move relative to the heat preservation cover 60 .

[0061] That is to say, during the process of pulling the crystal and moving it axially, the heating element 81 can also move up and down under the drive of the lifting mechanism 82, thereby effectively controlling the crystal temperature gradient in the crystal growth chamber 70, reducing the axial temperature gradient, and thereby reducing the thermal stress on the crystal head, reducing the risk of crystal defects or even cracking, and further improving the stability of crystal growth and the quality of crystal growth.

[0062] In order to make the heating temperature around the heat preservation cover 60 more uniform and achieve the production of high-quality crystals, the number of heating elements 81 and lifting mechanisms 82 can be set to multiple, and the multiple heating elements 81 are arranged at intervals along the circumference of the heat preservation cover 60, and the multiple lifting mechanisms 82 are connected to the multiple heating elements 81 in a one-to-one correspondence.

[0063] It should be noted that, in this embodiment, the number of the heating elements 81 and the lifting mechanisms 82 is specifically two, and the two heating elements 81 are respectively arranged on both sides of the heat preservation cover 60. Of course, in other embodiments, the number of the heating elements 81 and the lifting mechanisms 82 can also be three, four or five, etc., and the specific number of the two needs to be determined according to the actual production situation and the design requirements of the heat preservation cover 60.

[0064] In addition, it should be noted that the heating element 81 can be heated by a resistance wire, or other heating methods such as infrared heating or arc heating.

[0065] Please continue to combine Figure 1 The Czochralski crystal growth device 100 further includes a heat preservation layer 91 and an induction heating coil 92. The heat preservation layer 91 is wrapped around the crucible 20, and the induction heating coil 92 is arranged around the outer circumference of the heat preservation layer 91. It is easy to understand that the heat preservation layer 91 can keep the crucible 20 warm, further ensuring the stability of crystal growth; and the induction heating coil 92 generates a magnetic field after being energized, and the crucible 20 can be heated by the electromagnetic heating principle, which will not be described in detail in this embodiment.

[0066] In summary, an embodiment of the present invention provides a crystal growth device 100 using a Czochralski method, which includes a furnace body 10, a crucible 20, a pulling and rotating device 30, a seed rod adjusting device 40 and a seed rod 50. The crucible 20 is arranged in the furnace body 10; the pulling and rotating device 30 includes a pulling and rotating mechanism 31 and a lifting rod 32. The pulling and rotating mechanism 31 is arranged above the furnace body 10, and the lifting rod 32 is connected to the pulling and rotating mechanism 31 and is located in the furnace body 10; the seed rod adjusting device 40 and the seed rod 50 are both arranged in the furnace body 10, and the lifting rod 32, the seed rod adjusting device 40 and the seed rod 50 are connected in sequence; wherein the pulling and rotating mechanism 31 is used to drive the lifting rod 32 to rise or fall or rotate, and the seed rod adjusting device 40 is used to drive the seed rod 50 to move relative to the crucible 20.

[0067] It can be understood that, during the preliminary loading of the furnace body 10 and the heating of the crucible 20 for crystal growth, the position of the seed rod 50 can be adjusted in real time in the furnace body 10 through the seed rod adjustment device 40 so that it is located at the center of the temperature field of the crucible 20, thereby ensuring that the crystal does not shift during the growth process and eliminating the need to open the furnace and reload the furnace, thereby improving work efficiency and crystal growth efficiency; and also making the direction of the grown crystal the same as that of the seed crystal, thereby improving the quality of the grown crystal 300.

[0068] The above description is only a specific embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A Czochralski crystal growth device, characterized in that: include: Furnace body (10); a crucible (20), wherein the crucible (20) is arranged in the furnace body (10); A lifting and rotating device (30), the lifting and rotating device (30) comprising a lifting and rotating mechanism (31) and a lifting rod (32), the lifting and rotating mechanism (31) being arranged above the furnace body (10), the lifting rod (32) being connected to the lifting and rotating mechanism (31) and being located inside the furnace body (10); A seed crystal rod adjusting device (40) and a seed crystal rod (50), wherein the seed crystal rod adjusting device (40) and the seed crystal rod (50) are both arranged in the furnace body (10), and the lifting rod (32), the seed crystal rod adjusting device (40) and the seed crystal rod (50) are connected in sequence; The lifting and rotating mechanism (31) is used to drive the lifting rod (32) to rise and fall or rotate, and the seed crystal rod adjusting device (40) is used to drive the seed crystal rod (50) to move relative to the crucible (20).

2. The Czochralski crystal growth device according to claim 1, characterized in that: The seed crystal rod adjustment device (40) comprises a seed crystal rod adjustment mechanism (41) and a seed crystal rod clamp (42), and the lifting rod (32), the seed crystal rod adjustment mechanism (41), the seed crystal rod clamp (42) and the seed crystal rod (50) are connected in sequence; The seed crystal rod adjustment mechanism (41) is used to drive the seed crystal rod clamp (42) to move relative to the crucible (20).

3. The Czochralski crystal growth device according to claim 2, characterized in that: The seed crystal rod adjustment mechanism (41) comprises a first slide rail (411), a first slider (412) and a first driving member, the first slide rail (411) is connected to an end of the lifting rod (32) away from the lifting and rotating mechanism (31), the first slider (412) is slidably disposed on the first slide rail (411), and the seed crystal rod clamp (42) is connected to the first slider (412); The first driving member is used to drive the first sliding block (412) to move relative to the first sliding rail (411).

4. The Czochralski crystal growth device according to claim 3, characterized in that: The first sliding block (412) is slidably disposed on the first sliding rail (411) along a first direction; The seed crystal rod adjustment mechanism (41) further comprises a second slide rail (413), a second slider (414) and a second driving member, wherein the second slide rail (413) is connected to the first slider (412), the second slider (414) is slidably disposed on the first slide rail (411) along a second direction, the seed crystal rod clamp (42) is connected to the second slider (414), and the second driving member is used to drive the second slider (414) to move relative to the second slide rail (413); the lifting and rotating mechanism (31) and the crucible (20) are spaced apart along a third direction; The first direction, the second direction and the third direction are perpendicular to each other.

5. The Czochralski crystal growth device according to any one of claims 2 to 4, characterized in that: The seed crystal rod adjustment device (40) further comprises a universal ball head (43), wherein the universal ball head (43) is located between the seed crystal rod adjustment mechanism (41) and the seed crystal rod clamp (42), and the universal ball head (43) is simultaneously connected to the seed crystal rod adjustment mechanism (41) and the seed crystal rod clamp (42).

6. The Czochralski crystal growth device according to claim 1, characterized in that: The Czochralski crystal growth device (100) further comprises a heat-insulating cover (60), which is arranged in the furnace body (10) and covers the opening of the crucible (20) to form a crystal growth chamber (70) between the heat-insulating cover and the crucible (20); The heat-insulating cover (60) is located between the lifting and rotating mechanism (31) and the crucible (20), and the lifting rod (32) is passed through the heat-insulating cover (60) and extends into the crystal growth chamber (70).

7. The Czochralski crystal growth device according to claim 6, characterized in that: The heat-insulating cover (60) is conical in shape.

8. The Czochralski crystal growth device according to claim 6 or 7, characterized in that: The Czochralski crystal growth device (100) further comprises a temperature regulating device (80), which is arranged in the furnace body (10) and is used to regulate the temperature in the heat-insulating cover (60).

9. The Czochralski crystal growth device according to claim 8, characterized in that: The temperature regulating device (80) comprises a heating element (81) and a lifting mechanism (82); the heating element (81) is arranged in the furnace body (10) and is located on one side of the heat-insulating cover (60); the lifting mechanism (82) is connected to the heating element (81) and is used to drive the heating element (81) to move relative to the heat-insulating cover (60).

10. The Czochralski crystal growth device according to claim 9, characterized in that: The number of the heating elements (81) and the lifting mechanisms (82) are both multiple, the multiple heating elements (81) are arranged at intervals along the circumference of the heat-insulating cover (60), and the multiple lifting mechanisms (82) are connected to the multiple heating elements (81) in a one-to-one correspondence.

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