Detection device and method

Abstract

The invention discloses a detection device and method, relates to the technical field of electronics, and is used for carrying out one-stop automatic test on a plurality of dynamic characteristics of a power device and ensuring high efficiency and accuracy of the test. In the device, one pole of a switching tube and one pole of a first power device are coupled to a first node, the other pole of the switching tube and the positive pole of a direct-current power supply are coupled to a second node, the negative pole of the direct-current power supply and the other pole of the first power device are coupled to a third node through a resistor, and a first relay is coupled between the first node and the second node. The inductor and the second relay are coupled in series between the first node and the second node; and the control circuit is used for controlling the switch-on or switch-off of the switch tube through the first driving circuit, controlling the switch-on or switch-off of the first power device through the second driving circuit, and controlling the switch-on or switch-off of the first relay and the second relay.

Description

Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to a detection device and method. Background Art

[0002] In recent years, new devices made of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) (referred to as SiC MOSFET) can improve the performance of power electronic converters due to the advantages of high breakdown electric field, fast carrier saturation drift velocity, good thermal stability and high thermal conductivity, making it possible to replace silicon devices in high-speed and high-voltage applications. Compared with Si devices of the same level, the characteristics of SiC MOSFET have advantages in high voltage, high temperature and high frequency applications, and thus have been applied in various fields. With the continuous development and improvement of SiC MOSFET technology, the on-resistance of SiC MOSFET is further reduced, the breakdown voltage and on-state current are further increased, and the range of options is continuously expanded. Before using SiC MOSFET, it is necessary to understand its switching characteristics (i.e. dynamic characteristics) in detail to provide guidance for the design of power electronic converters. Summary of the invention

[0003] The present application provides a detection device and method for performing one-stop automated testing on multiple dynamic characteristics of a power device to ensure the efficiency and accuracy of the test.

[0004] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0005] In a first aspect, a testing device is provided, which includes: a DC power supply, a control circuit, a switch tube, a first power device, a first drive circuit, a second drive circuit, an inductor, a resistor, a first relay, and a second relay; wherein, one pole of the switch tube and one pole of the first power device are coupled to a first node, the other pole of the switch tube and the positive pole of the DC power supply are coupled to a second node, the negative pole of the DC power supply is coupled to the other pole of the first power device at a third node through the resistor, the first relay is coupled between the first node and the second node, the inductor and the second relay are coupled in series between the first node and the second node, the output end of the first drive circuit is coupled to the control pole of the switch tube, and the output end of the second drive circuit is coupled to the control pole of the first power device; the control circuit is used to control the conduction or shutoff of the switch tube through the first drive circuit, control the conduction or shutoff of the first power device through the second drive circuit, and control the conduction or shutoff of the first relay and the second relay.

[0006] In the above technical solution, the control circuit can be used to: control the on or off of the switch tube through the first drive circuit, control the on or off of the first power device through the second drive circuit, and control the on or off of the first relay and the second relay. That is, the control circuit can be used to control the states of the switch tube, the first power device, the first relay, and the second relay, so that the control circuit can control the above devices to different states to achieve one-stop automated testing of multiple dynamic characteristics of the power device, and can accurately simulate the actual use conditions of the power device, and achieve compatibility of multiple test functions of the power device such as double pulse, short circuit, avalanche and reverse recovery, so as to ensure the efficiency and accuracy of the test, and thus improve the reliability of the test results.

[0007] Optionally, the control circuit may be a controller, a processor or a microprocessor, etc. Exemplarily, the control circuit may be a digital signal processor DSP. The resistor may be a device with a certain current shunting function, for example, the resistor R may be a coaxial resistor.

[0008] In a possible implementation of the first aspect, the switch tube is a diode or a second power device. In the above possible implementation, the flexibility and diversity of selecting the switch tube can be improved.

[0009] In a possible implementation of the first aspect, if the device is in a double pulse test mode, then: the control circuit is used to control the first power device to be turned on and the second relay to be turned on through the second drive circuit at a first moment; the control circuit is also used to control the first power device to be turned off through the second drive circuit at a second moment; the control circuit is also used to control the first power device to be turned on and the second relay to be turned on through the second drive circuit at a third moment; the control circuit is also used to control the first power device to be turned off through the second drive circuit at a fourth moment. In the above possible implementation, through the above double pulse test, the on- and off-characteristics of the first power device, such as the voltage rise time, voltage fall time, current rise time, and current fall time, can be tested, and the on- and reverse recovery characteristics of the switch tube can also be tested, so as to ensure the efficiency and accuracy of the test, and thus improve the reliability of the test results.

[0010] In a possible implementation of the first aspect, if the device is in a short-circuit test mode, then: the control circuit is also used to control the conduction of the first power device through the second drive circuit, and control the conduction of the first relay; the control circuit is also used to control the output voltage of the DC power supply to cause a short circuit in the first power device. Optionally, the control circuit is also used to control the short-circuit time of the first power device through the second drive circuit. In the above possible implementations, the short-circuit test can be used to test the short-circuit withstand time and short-circuit withstand voltage of the first power device, and the device can repeatedly implement multiple short-circuit tests through the control of the control circuit, thereby improving the efficiency and accuracy of the short-circuit test, and then improving the reliability of the short-circuit test results.

[0011] In a possible implementation of the first aspect, if the device is in an avalanche test mode, then: the control circuit is further used to control the first power device to be turned on and the second relay to be turned on through the second drive circuit; the control circuit is further used to control the second relay to be turned off so that the first power device avalanches. In the above possible implementation, the avalanche test can be used to test the dynamic characteristics of the first power device, such as the avalanche energy, and the device can repeatedly perform multiple avalanche tests through the control of the control circuit, thereby improving the efficiency and accuracy of the avalanche test, and further improving the reliability of the avalanche test results.

[0012] In a possible implementation of the first aspect, the device further includes: a third drive circuit, and a first transistor and a plurality of first diodes coupled in series between the first node and the second node; the control circuit is also used to control the first transistor to be turned on through the third drive circuit if the first power device is short-circuited when the second relay is turned on. In the above possible implementation, when the second relay is turned on, if the first power device is short-circuited, the control circuit is also used to control the first transistor to be turned on through the third drive circuit, so that the energy in the inductor can be continuously circulated through the plurality of first diodes, so that the device has ultra-fast overcurrent protection capability, thereby preventing the device from being burned, and improving the safety of the device.

[0013] In a possible implementation of the first aspect, the device further includes: a third relay, the third relay is coupled between the third node and the first end of the inductor, and the first end of the inductor is coupled to the second relay; if the device is in a reverse recovery test mode, then: the control circuit is also used to control the switch tube to turn on through the first drive circuit, control the first power device to turn on through the second drive circuit, and control the third relay to turn on; the control circuit is also used to control the first power device to turn off through the second drive circuit, so that the first power device enters reverse recovery. In the above possible implementation, the reverse recovery characteristics of the first power device can be tested through the above reverse recovery test, ensuring the efficiency and accuracy of the test, thereby improving the reliability of the test results.

[0014] In a possible implementation of the first aspect, the device further includes: a fourth drive circuit, and a second transistor and a plurality of second diodes coupled in series between the first node and the third node; the control circuit is also used to control the second transistor to be turned on through the fourth drive circuit if the first power device is short-circuited when the third relay is turned on. In the above possible implementation, when the third relay is turned on, if the first power device is short-circuited, the control circuit is also used to control the second transistor to be turned on through the fourth drive circuit, so that the energy in the inductor can be continued through the plurality of second diodes, so that the device has ultra-fast overcurrent protection capability, thereby preventing the device from being burned, and improving the safety of the device.

[0015] In a possible implementation of the first aspect, the device further includes: a protection circuit coupled between the positive electrode of the DC power supply and the second node; and the control circuit is further used to control the protection circuit to be in an off state when the first power device is short-circuited. In the above possible implementation, when the first power device is short-circuited, the control circuit can be used to control the protection circuit to be in an off state, thereby blocking the current of the inductor from being transmitted to the DC power supply, so that the device has an ultra-fast overcurrent protection capability, thereby preventing the device from being burned, and improving the safety of the device.

[0016] In a possible implementation of the first aspect, the DC power supply, the control circuit, the first drive circuit, the second drive circuit and the resistor are integrated on a first circuit board, the switch tube and the first power device are integrated on a second circuit board, the inductor, the first relay and the second relay are integrated on a third circuit board, and the first circuit board and the second circuit board, as well as the second circuit board and the third circuit board are coupled via common terminals. In the above possible implementation, by integrating the above devices on the first circuit board, the second circuit board and the third circuit board respectively, the device can support the overall replacement of different circuit boards, so that the dynamic characteristics of power devices of different packages can be tested by replacement, and at the same time, matching circuits are designed according to different power devices, which can effectively reduce parasitic parameters in the device, reduce the influence of parasitic parameters on test results, and thus improve the reliability of test results.

[0017] In a possible implementation of the first aspect, the first power device includes at least one of the following: SiCMOSFET, IGBT, GaN HEMT. The above possible implementation can realize the test of dynamic characteristics of power devices of different packages, and at the same time, according to the design of matching circuits of different power devices, the parasitic parameters in the device can be effectively reduced, and the influence of the parasitic parameters on the test results can be reduced, thereby improving the reliability of the test results.

[0018] In a second aspect, a detection method is provided, which is applied to a detection device, the device comprising: a DC power supply, a control circuit, a switch tube, a first power device, a first drive circuit, a second drive circuit, an inductor, a resistor, a first relay and a second relay; wherein, one pole of the switch tube and one pole of the first power device are coupled to a first node, the other pole of the switch tube and the positive pole of the DC power supply are coupled to a second node, the negative pole of the DC power supply is coupled to the other pole of the first power device through the resistor at a third node, the first relay is coupled between the first node and the second node, the inductor and the second relay are coupled in series between the first node and the second node, the output end of the first drive circuit is coupled to the control pole of the switch tube, and the output end of the second drive circuit is coupled to the control pole of the first power device; the method comprises: the control circuit controls the conduction or shutoff of the switch tube through the first drive circuit, controls the conduction or shutoff of the first power device through the second drive circuit, and controls the conduction or shutoff of the first relay and the second relay.

[0019] In a possible implementation of the second aspect, if the device is in a dual pulse test mode, the method also includes: the control circuit controls the first power device to be turned on and the second relay to be turned on through the second drive circuit at a first moment; the control circuit controls the first power device to be turned off through the second drive circuit at a second moment; the control circuit controls the first power device to be turned on and the second relay to be turned on through the second drive circuit at a third moment; and the control circuit controls the first power device to be turned off through the second drive circuit at a fourth moment.

[0020] In a possible implementation of the second aspect, if the device is in a short-circuit test mode, the method further includes: the control circuit controls the first power device to be turned on through the second drive circuit, and controls the first relay to be turned on; the control circuit controls the output voltage of the DC power supply to cause a short circuit in the first power device.

[0021] In a possible implementation manner of the second aspect, the method further includes: the control circuit controlling the short-circuit time of the first power device through the second drive circuit.

[0022] In a possible implementation of the second aspect, if the device is in an avalanche test mode, the method further includes: the control circuit controls the first power device to turn on and the second relay to turn on through the second drive circuit; the control circuit controls the second relay to turn off so that the first power device avalanches.

[0023] In a possible implementation of the second aspect, the device also includes: a third drive circuit, and a first transistor and a plurality of first diodes coupled in series between the first node and the second node; the method also includes: when the second relay is turned on, if the first power device is short-circuited, the control circuit controls the first transistor to be turned on through the third drive circuit to turn on the plurality of first diodes.

[0024] In a possible implementation of the second aspect, the device also includes: a third relay, the third relay is coupled between the third node and the first end of the inductor, and the first end of the inductor is coupled to the second relay; if the device is in a reverse recovery test mode, the method also includes: the control circuit controls the switch tube to turn on through the first drive circuit, controls the first power device to turn on through the second drive circuit, and controls the third relay to turn on; the control circuit controls the first power device to turn off through the second drive circuit, so that the first power device enters reverse recovery.

[0025] In a possible implementation of the second aspect, the device also includes: a fourth drive circuit, and a second transistor and a plurality of second diodes coupled in series between the first node and the third node; the method also includes: when the third relay is turned on, if the first power device is short-circuited, the control circuit controls the second transistor to be turned on through the fourth drive circuit to turn on the plurality of second diodes.

[0026] In a possible implementation of the second aspect, the device also includes: a protection circuit coupled between the positive electrode of the DC power supply and the second node; the method also includes: when the first power device is short-circuited, the control circuit controls the protection circuit to be in an off state.

[0027] According to a third aspect, an integrated device is provided, comprising: a packaging substrate, and a detection device disposed on the packaging substrate, wherein the device is a detection device provided by the first aspect or any possible implementation of the first aspect.

[0028] According to a fourth aspect, a computer-readable storage medium is provided, in which instructions are stored. When the instructions are executed on a device, the device executes the method provided in the second aspect or any possible implementation of the second aspect.

[0029] According to a fifth aspect, a computer program product is provided, which includes instructions. When the instructions are executed on a device, the device executes the method provided in the second aspect or any possible implementation manner of the second aspect.

[0030] It can be understood that the beneficial effects that can be achieved by any of the detection methods, integrated devices, computer-readable storage media and computer program products provided above can correspond to the beneficial effects in the detection devices provided above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of a circuit for testing a power device based on a double pulse test method;

[0032] Figure 2 A schematic diagram of a circuit for testing a power device based on an avalanche test method;

[0033] Figure 3 A schematic diagram of the structure of a detection device provided in an embodiment of the present application;

[0034] Figure 4 A waveform diagram of multiple signals in a double pulse test mode provided in an embodiment of the present application;

[0035] Figure 5A schematic diagram of a double pulse test mode provided in an embodiment of the present application;

[0036] Figure 6 A schematic diagram of another double pulse test mode provided in an embodiment of the present application;

[0037] Figure 7 A schematic diagram of another double pulse test mode provided in an embodiment of the present application;

[0038] Figure 8 A schematic diagram of a short circuit test mode provided in an embodiment of the present application;

[0039] Fig. 9 A schematic diagram of an avalanche test mode provided in an embodiment of the present application;

[0040] Fig.10 A schematic diagram of the structure of another detection device provided in an embodiment of the present application;

[0041] Fig.11 A schematic diagram of a reverse recovery test mode provided in an embodiment of the present application;

[0042] Fig.12 A schematic diagram of another reverse recovery test mode provided in an embodiment of the present application;

[0043] Fig.13 A schematic diagram of the structure of another detection device provided in an embodiment of the present application;

[0044] Fig.14 A schematic diagram of the structure of another detection device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] The following will discuss the making and use of various embodiments in detail. However, it should be understood that many applicable inventive concepts provided by this application can be implemented in a variety of specific environments. The specific embodiments discussed are only illustrative of specific ways to implement and use this description and this technology, and do not limit the scope of this application.

[0046] Unless defined otherwise, all technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art.

[0047] Various circuits or other components may be described or referred to as being "configured to" perform one or more tasks. In this case, "configured to" is used to imply structure by indicating that the circuit / component includes structure (e.g., circuitry) that performs the one or more tasks during operation. Thus, even when the specified circuit / component is not currently operational (e.g., not turned on), the circuit / component may be referred to as being configured to perform the task. Circuits / components used with the phrase "configured to" include hardware, such as circuits that perform an operation, etc.

[0048] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. In the present application, "at least one" means one or more, and "more" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b or c can represent: a, b, c, a and b, a and c, b and c, a, b and c; where a, b and c can be single or multiple.

[0049] The embodiments of the present application use words such as "first" and "second" to distinguish objects with similar names, functions or effects. Those skilled in the art will understand that words such as "first" and "second" do not limit the quantity and execution order. The term "coupled" is used to indicate electrical connection, including direct connection through wires or connection terminals or indirect connection through other devices. Therefore, "coupled" should be regarded as a broad electronic communication connection.

[0050] It should be noted that, in this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in this application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0051] In addition, the transistor involved in the embodiment of the present application may be a metal oxide semiconductor (MOS) field effect transistor (hereinafter referred to as MOS tube). The control electrode of the transistor in the embodiment of the present application may refer to the gate of the transistor; in one possible embodiment, one electrode of the transistor may refer to the source electrode, and the other electrode may refer to the drain electrode; in another possible embodiment, one electrode of the transistor may refer to the drain electrode, and the other electrode may refer to the source electrode.

[0052] Before introducing the embodiments of the present application, the application scenarios of the present application are first introduced and explained.

[0053] Silicon Carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) (SiC MOSFET for short) is a new device that can improve the performance of power electronic converters due to its material advantages such as high breakdown electric field, fast carrier saturation drift velocity, good thermal stability and high thermal conductivity, making it possible to replace silicon devices in high-speed and high-voltage applications. Compared with Si devices of the same level (such as Si IGBT and Si DMOS), the characteristics of SiC MOSFET have advantages in high voltage, high temperature and high frequency applications, and thus have been applied in various fields. With the continuous development and improvement of SiC MOSFET technology, the on-resistance of SiC MOSFET has been further reduced, the breakdown voltage and on-state current have been further increased, and the range of options has been continuously expanded. Before using SiC MOSFET, it is necessary to understand its switching characteristics (i.e., dynamic characteristics) in detail to provide guidance for the design of power electronic converters.

[0054] Test characterization of power devices. The dynamic characteristics test methods of SiC MOSFET are usually divided into two methods: single pulse and double pulse test. In most power electronic devices, the load contains inductance. After the SiC MOSFET is turned off, the device diode connected in series with it will continue to flow, and the load current will generally not be interrupted. At this time, when the SiC MOSFET is turned on, the device diode will undergo a reverse recovery process. However, there is no reverse recovery process in the single pulse experiment, and only the turn-off process of the SiC MOSFET can be detected. Therefore, the double pulse experiment is more real than the single pulse experiment and is more widely used in the dynamic characteristics test of SiC MOSFET. The double pulse experiment is the most direct and effective means to evaluate the dynamic parameters of power devices. The double pulse test platform can be used to collect the waveforms of the driving voltage, switch voltage and switch current during the turn-on and turn-off processes of the SiC MOSFET. The above waveforms can be used to evaluate the switching characteristics of the SiC MOSFET, such as the switch delay time, the rise and fall time of the voltage and current, the voltage and current change rate, the voltage and current stress, and the switch loss. The accuracy of the test results is the prerequisite for correctly evaluating the switching characteristics of the SiC MOSFET, which requires accurate test methods.

[0055] As a power switching device with excellent electrical performance, SiC MOSFET is usually used in circuit topologies with inductive loads. For conventional bridge circuits, the conversion of load current between the upper and lower bridge arms corresponds to the process of the freewheeling diode from turning on to turning off. The PiN body diode of SiC MOSFET itself is a bipolar device. When it is forward-conducted, a large number of free carriers are stored in its drift region. These carriers must be completely extracted from turning on to turning off so that the device can withstand the withstand voltage. When the carriers are extracted, a large reverse current will be generated, that is, the reverse recovery current. This current will continue until the depletion region is formed. This process is the reverse recovery process of the body diode in SiC MOSFET.

[0056] Reliability test related to the ultimate stress of power devices. Third-generation semiconductor power devices such as SiC MOSFET are widely used in power conversion modules in the field of power electronics. Compared with traditional Si devices, power conversion modules using third-generation semiconductor power devices are smaller in size, have higher operating frequencies, and higher power densities. However, under high-speed switching conditions, high voltage and current change rates (i.e., d i / d t and d v / d t ) will couple with passive devices or parasitic parameters in the circuit, causing large oscillations in voltage and current, affecting device reliability and even causing device failure. In the power conversion module, the load end of the switching device is generally an inductive load, and the parasitic parameters in the loop are also generally inductive. If there is no diode with voltage clamping function in parallel at both ends of the inductive load, for SiC devices such as SiC MOSFET, when the device is turned off, the energy stored in the inductor when the loop is turned on will be completely dissipated in the device at the moment of shutdown. The induced electromotive force generated on the inductive load is directly applied to both ends of the device. The above process is also called unclamped inductive switching (UIS) process. When this voltage exceeds the breakdown voltage of the device body diode, it forces the device body diode to undergo avalanche breakdown, and all the energy in the inductor is converted into avalanche energy dissipation. Therefore, the avalanche tolerance of the device will seriously affect the service life of the power conversion module.

[0057] At the same time, SiC MOSFET and other power devices as the core of the converter module often work in complex environments and working conditions while achieving higher power density and higher temperature environments, and often have some fault phenomena, such as device overcurrent, overvoltage and even short circuit. The most serious of these is the short circuit fault, which often generates a large short circuit current inside the device. Due to the small chip area of ​​the power device and the high current density, when a short circuit fault occurs, the current rises very quickly, which can easily cause the device or even the circuit system to fail.

[0058] At present, the test devices of the double pulse test method, UIS test method and short-circuit current test method are all independently operated, and each test function is a separate test platform, with low resource utilization and high complexity of environment construction, which greatly increases the cost of carrying out dynamic characteristic test and limit stress reliability test of power devices, and each test device has its own shortcomings. There are parasitic inductances in the double pulse test circuit, which come from the printed circuit board (PCB) connection wire and device packaging, and there are parasitic capacitances in the freewheeling diode and the load inductor. Because the current change rate and voltage change rate of the power device are large, the influence of parasitic inductance and parasitic capacitance on the test results cannot be ignored. At the same time, in the existing avalanche and short-circuit test methods of power devices, an external signal generator is required, and the gate single pulse is sent by manually controlling the signal transmitter to turn on or off the power device, so as to realize a single avalanche and short-circuit current test, and it is impossible to realize automatic repetition of avalanche and short-circuit test, and it is impossible to simulate the actual use conditions of power device applications.

[0059] Figure 1 The schematic diagram of a circuit for testing a power device based on a double pulse test method is shown in FIG. The circuit includes: a first power tube T1, a second power tube T2, an inductor L, a capacitor C, and a power supply Udc. The first power tube T1 and the second power tube T2 are coupled in series at both ends of the power supply Udc, the capacitor C is coupled in parallel with the power supply Udc, and the inductor L is coupled in parallel with the first power tube T1. In the figure, Ic represents current.

[0060] Specifically, Figure 1 As shown in (a), when the first power tube T1 is turned off (or cut off), and the second power tube T2 is turned on by the first pulse signal, the current flows along the loop L->T2. In this process, the turn-on characteristics of the second power tube T2 can be detected, such as the switch delay time and rise time of the switch tube. Figure 1 As shown in (b) of FIG. 1 , when the second power tube T2 is turned off, the current will continue to flow along the loop L-T1, and the voltage peak size of the second power tube T2 can be detected at the moment of turning off. Figure 1 As shown in (c), if the second power tube T2 is turned on again by the second pulse signal, the body diode in the first power tube T1 switches from the on state to the off state, and the reverse recovery characteristics of the first power tube T1 can be detected at this time. According to actual needs, the switching frequency and the duty cycle of the pulse signal can be controlled to adjust the circuit to the current conditions actually required, and then the turn-on and turn-off characteristics of the power device and the turn-on and reverse recovery characteristics of the power device can be tested by two pulse signals.

[0061] When the first power tube T1 and the second power tube T2 are SiC MOSFETs, there are many problems in performing double pulse testing based on the above circuit due to the high switching speed and large voltage and current change rate of SiC MOSFETs. For example, there are parasitic inductances in the circuit, which come from the connecting wires between devices (for example, PCB connecting wires) and device packaging. The current change rate of power devices such as SiC MOSFETs is large, so the impact of parasitic inductance on the test results can no longer be ignored.

[0062] Figure 2 The present invention is a schematic diagram of a circuit for testing a power device based on an avalanche test method. The circuit includes: a power device DUT, an inductor L, a capacitor C, an adjustable voltage source VDD, a gate resistor Rg and a pulse generator Vgg. Among them, the inductor L, the power device DUT, the gate resistor Rg and the pulse generator Vgg are coupled in series at both ends of the adjustable voltage source VDD, and the capacitor C is coupled in parallel with the adjustable voltage source VDD. In the figure, Id represents the drain current, Vds represents the drain-source voltage, Vg represents the gate-source voltage, D represents the drain, G represents the gate, and S represents the source.

[0063] According to the group standard "General Technical Specifications for Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors", the test environment temperature is set to the specified value. The adjustable voltage source VDD is set to the specified value. Specifically, the pulse generator Vgg is used to generate a gate pulse, which can be used to turn on the power device DUT. By adjusting the width of the gate pulse generated by the pulse generator Vgg, the turn-on time of the power device DUT is adjusted, and the value of the monitored drain current Id is used to determine whether it reaches the specified avalanche current. Under the specified avalanche current conditions, the power device DUT operates with the specified number of pulses and repetition rate. One gate pulse can perform an avalanche current test on the power device DUT. After the above test, confirm whether the characteristics of the power device DUT are normal based on the failure judgment basis of the power device DUT. After the test is completed, the power device DUT should be within all specified parameter limits.

[0064] For the avalanche withstand characteristics of power device DUT, it is necessary to carry out repeated UIS stress tests to simulate the actual working environment of the device, because the voltage shock or current shock in the system with inductive load in actual application is usually repeated many times. In this method, the UIS stress test method performs an avalanche current test once for each gate pulse, and cannot realize automatic repeated avalanche current test. Therefore, it cannot simulate the actual use conditions of power devices and is not suitable for studying the avalanche current characteristics of power devices.

[0065] Above Figure 2The circuit shown can also be used in the short-circuit test of power devices. According to the group standard "General Technical Specifications for Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors", during the short-circuit current test, the ambient temperature is adjusted to the specified value so that the drain-source voltage Vds (i.e., Vdd) remains at the specified value. Specifically, according to the specification parameters of the power device DUT, the gate-source voltage Vg and the width of the gate pulse (i.e., the short-circuit withstand time) under a single pulse are set to the specified values, and the gate pulse is turned on to cause a short circuit in the power device DUT. One gate pulse is a short-circuit current test for the power device DUT.

[0066] For the short-circuit characteristics of power devices, repeated short-circuit current stress tests need to be carried out to simulate the actual working environment of the device, because short-circuit failures in the system in actual applications are usually repeated many times. In this method, a short-circuit current test is performed once for each gate pulse in the short-circuit current test method, and automatic repeated short-circuit current tests cannot be achieved.

[0067] Based on this, an embodiment of the present application provides a detection device, which can be used to perform one-stop automated testing on multiple dynamic characteristics of a power device. At the same time, it can accurately simulate the actual operating conditions of the power device, achieve compatibility with multiple test functions such as double pulse, short circuit, avalanche and reverse recovery of the power device, and can also achieve testing of power devices in various different packages such as TO247 / TO247-4 / QFN / DFN, thereby ensuring the efficiency and accuracy of the test, and thus improving the reliability of the test results.

[0068] Figure 3 A schematic diagram of a detection device provided in an embodiment of the present application. The device includes: a DC power supply VBUS, a control circuit 11, a switch tube M0, a first power device M1, a first drive circuit 12, a second drive circuit 13, an inductor L, a resistor R, a first relay 14, and a second relay 15.

[0069] Among them, one electrode of the switch tube M0 and one electrode of the first power device M1 are coupled to the first node a, the other electrode of the switch tube M0 and the positive electrode of the DC power supply VBUS are coupled to the second node b, the negative electrode of the DC power supply VBUS is coupled to the other electrode of the first power device M1 through the resistor R to the third node c, the first relay 14 is coupled between the first node a and the second node b, the inductor L and the second relay 15 are coupled in series between the first node a and the second node b, the output end of the first drive circuit 12 is coupled to the control electrode of the switch tube M0, and the output end of the second drive circuit 13 is coupled to the control electrode of the first power device M1.

[0070] Optionally, the switch tube M0 may be a diode or a second power device. In a possible example, the power device in the present application (e.g., the first power device M1 or the second power device) may be a SiC MOSFET, an insulated gate bipolar transistor (IGBT), or a gallium nitride high electron mobility transistor (GaN high electron mobility transistors, GaN HEMT). The figure takes the switch tube M0 as the second power device as an example for illustration.

[0071] Optionally, the control circuit 11 may be a controller, a processor or a microprocessor, etc. In a possible example, the control circuit 11 may be a digital signal processor (DSP). The resistor R may be a device with a certain shunt function, for example, the resistor R may be a coaxial resistor.

[0072] The control circuit 11 is used to control the on or off of the switch tube M0 through the first drive circuit 12, control the on or off of the first power device M1 through the second drive circuit 13, and control the on or off of the first relay 14 and the second relay 15. That is, the control circuit 11 can be used to control the states of the switch tube M0, the first power device M1, the first relay 14 and the second relay 15, so that the control circuit 11 can realize a one-stop automated test of multiple dynamic characteristics of the power device by controlling the above devices to different states.

[0073] The detection device provided in the embodiment of the present application can be in multiple test modes such as double pulse, short circuit, avalanche and reverse recovery, and is used to implement multiple tests such as double pulse, short circuit, avalanche and reverse recovery. The multiple test modes are introduced and explained below.

[0074] First, the device is in a double pulse test mode for implementing a double pulse test.

[0075] In a possible embodiment, Figure 4-Figure 7 As shown, if the device is in the double pulse test mode, the control circuit 11 can be used to: control the first power device M1 to be turned on and the second relay 15 to be turned on at the first moment t1; control the first power device M1 to be turned off at the second moment t2; control the first power device M1 to be turned on and the second relay 15 to be turned on at the third moment t3; and control the first power device M1 to be turned off at the fourth moment t4. Figure 4The waveform diagram of multiple signals of the device in the double pulse test mode is shown, and the multiple signals include a pulse signal applied to the gate of the first power device M1 (ie, the gate-source voltage Vgs), and the source-drain voltage Vds and the drain current Id of the first power device M1. Figure 5-Figure 7 The current direction of the device at different moments in the double pulse test mode is shown.

[0076] At the first moment t1, if Figure 5 As shown, the control circuit 11 can control the second drive circuit 13 to output the first pulse signal, so as to control the first power device M1 to be saturated and turned on through the first pulse signal, and at the same time, the control circuit 11 controls the second relay 15 to be turned on, and the switch tube M0 and the first relay 14 are in the off state. At this time, the output voltage of the DC power supply VBUS can be used to charge the inductor L, so that the current flowing through the inductor L increases linearly, and the corresponding drain current Id of the first power device M1 also increases linearly. For details, refer to Figure 4 The drain current Id is shown at time t0-t1 in FIG. During this process, the direction of the current loop in the device is as follows: Figure 5 As shown in ①.

[0077] At the second moment t2, if Figure 6 As shown, the control circuit 11 can control the second drive circuit 13 to stop outputting the first pulse signal to control the first power device M1 to turn off, while the second relay 15 is still in the on state, and the switch tube M0 and the first relay 14 are still in the off state. At this time, the inductor L is discharged through the switch tube M0. For example, when the switch tube M0 is the second power device, it is discharged through the second power device, that is, the current of the inductor L is continued by the switch tube M0. In this process, the direction of the current loop in the device is as follows: Figure 6 As shown in ②.

[0078] At the third moment t3, if Figure 7 As shown, the control circuit 11 can control the second drive circuit 13 to output a second pulse signal, so as to control the first power device M1 to turn on again through the second pulse signal, while the second relay 15 is still in the on state, and the switch tube M0 and the first relay 14 are still in the off state. At this time, the switch tube M0 enters reverse recovery, and the corresponding reverse recovery current will pass through the first power device M1, so that the drain current Id of the first power device M1 is the superposition of the reverse recovery current and the current flowing through the inductor L for a period of time; after the reverse recovery of the switch tube M0 ends, the increase of the drain current Id is equal to the increase of the current flowing through the inductor L, for details, refer to Figure 4 The drain current Id is shown at time t3-t4 in the figure. During the reverse recovery process, the direction of the current loop in the device is as follows: Figure 7 As shown in ③.

[0079] At the fourth moment t4, the control circuit 11 can control the second drive circuit 13 to stop outputting the second pulse signal to control the first power device M1 to turn off, while the second relay 15 is still in the on state, and the switch tube M0 and the first relay 14 are still in the off state. At this time, the inductor L is discharged through the switch tube M0.

[0080] The embodiment of the present application can test the on- and off-characteristics such as voltage rise time, voltage fall time, current rise time, and current fall time of the first power device M1 through the above-mentioned double pulse test, and can also test the on- and reverse recovery characteristics of the switch tube M0.

[0081] Second, the device is in a short-circuit test mode for implementing a short-circuit test.

[0082] In a possible embodiment, Figure 8 As shown, if the device is in the short-circuit test mode, the control circuit 11 can be used to: control the first power device M1 to be turned on, the first relay 14 to be turned on, at this time the switch tube M0 and the second relay 15 are in the off state; control the output voltage of the DC power supply VBUS, that is, control the magnitude of the output voltage of the DC power supply VBUS, so as to cause the first power device M1 to be short-circuited. During the short-circuit test process, the direction of the current loop in the device is as follows Figure 8 As shown in ①.

[0083] Optionally, the control circuit 11 can also be used to: control the short circuit time of the first power device M1. In one example, the control circuit 11 can be used to control the width of the pulse signal output by the second drive circuit 13, so as to control the short circuit time of the first power device M1 by controlling the width of the pulse signal.

[0084] Specifically, the control circuit 11 can control the first relay 14 to be turned on, and control the first drive circuit to output a pulse signal to control the first power device M1 to be turned on through the pulse signal. At the same time, the control circuit 11 can also control the width of the pulse signal and the output voltage of the DC power supply VBUS to short-circuit the first power device M1, thereby implementing a short-circuit test on the first power device M1. In the short-circuit test, when the first power device M1 is short-circuited, the energy of the parasitic inductance in the device is small, and no additional freewheeling circuit is required.

[0085] The embodiment of the present application can test the short-circuit withstand capability such as the short-circuit withstand time and the short-circuit withstand voltage of the first power device M1 through the above-mentioned short-circuit test, and the device can repeatedly implement multiple short-circuit tests through the control of the control circuit 11, thereby improving the efficiency and accuracy of the short-circuit test, and further improving the reliability of the short-circuit test results.

[0086] Third, the device is in an avalanche test mode for implementing an avalanche test.

[0087] In a possible embodiment, Fig. 9 As shown, if the device is in avalanche test mode, the control circuit 11 can be used to control the first power device M1 to turn on and the second relay 15 to turn on. At this time, the switch tube M0 and the first relay 14 are in the off state; the control circuit 11 is also used to control the second relay 15 to cause the first power device M1 to avalanche. During the short-circuit test, the direction of the current loop in the device is as follows Fig. 9 As shown in ①.

[0088] Specifically, the control circuit 11 can control the second relay 15 to turn on, and control the first drive circuit to output a pulse signal to control the first power device M1 to turn on through the pulse signal; thereafter, the control circuit 11 controls the second relay 15 to turn off. At the moment the second relay 15 is turned off, the current in the inductor L cannot change suddenly and can only be dissipated through the first power device M1, thereby causing the first power device M1 to avalanche, thereby achieving an avalanche test on the first power device M1.

[0089] The embodiment of the present application can implement the test of the dynamic characteristics such as the avalanche energy of the first power device M1 through the above-mentioned avalanche test, and the device can repeatedly implement multiple avalanche tests through the control of the control circuit 11, thereby improving the efficiency and accuracy of the avalanche test, and further improving the reliability of the avalanche test results.

[0090] Optional, such as Fig.10 As shown, the device may further include: a third driving circuit 16, and a first transistor T1 and a plurality of first diodes D1 coupled in series between the first node a and the second node b. The output end of the third driving circuit 16 is coupled to the control electrode of the first transistor T1, one electrode of the first transistor T1 is coupled to the first node a, the other electrode of the first transistor T1 is coupled to the positive electrodes of the plurality of first diodes D1, and the negative electrodes of the plurality of first diodes D1 are coupled to the second node b.

[0091] Optional, such as Fig.10 As shown, the device may further include: a protection circuit, wherein both ends of the protection circuit are coupled between the positive electrode of the DC power supply VBUS and the second node b. The control circuit 11 may be used to control the state of the protection circuit, for example, the control circuit 11 may control the protection circuit to be in an off state or an on state, the off state may also be called a high-impedance state, and the on state may also be a low-impedance state.

[0092] In a possible example, when the second relay 15 is turned on, if the first power device M1 is short-circuited, the control circuit 11 is also used to control the protection circuit to be in an off state, and control the first transistor T1 to be turned on through the third drive circuit 16, so that the energy in the inductor L can be freewheeled through the multiple first diodes D1 (the corresponding current direction is as shown in FIG. Fig.10 As shown in ① in the figure), the device has an ultra-fast (for example, <1us) over-current protection capability, thereby preventing the device from being burned and improving the safety of the device.

[0093] Fourthly, the device is in a reverse recovery test mode for implementing a reverse recovery test.

[0094] In a possible embodiment, Fig.11 and Fig.12 As shown, the device further includes: a third relay 17, the third relay 17 is coupled between the third node c and the first end of the inductor L, and the first end of the inductor L is coupled to the second relay 15. If the device is in the reverse recovery test mode, the control circuit 11 can be used to control the switch tube M0 to turn on through the first drive circuit 12, control the first power device M1 to turn on through the second drive circuit 13, and control the third relay 17 to turn on. At this time, the corresponding current direction in the device is as follows: Fig.11 As shown in ①; thereafter, the control circuit 11 is also used to control the first power device M1 to turn off through the second drive circuit 13. At the moment when the first power device M1 is turned off, the current of the inductor L is reversely continued by the first power device M1, that is, the first power device M1 enters reverse recovery. At this time, the direction of the reverse recovery current is as follows Fig.12 As shown in ② in the figure. The embodiment of the present application can test the reverse recovery characteristic of the first power device M1 through the reverse recovery test.

[0095] Optional, such as Fig.13 As shown, the device may further include: a fourth driving circuit 18, and a second transistor T2 and a plurality of second diodes D2 coupled in series between the first node a and the third node c. The output end of the fourth driving circuit 18 is coupled to the control electrode of the second transistor T2, one electrode of the second transistor T2 is coupled to the third node c, the other electrode of the second transistor T2 is coupled to the positive electrodes of the plurality of second diodes D2, and the negative electrodes of the plurality of second diodes D2 are coupled to the first node a.

[0096] Optional, such as Fig.13As shown, the device may further include: a protection circuit, wherein both ends of the protection circuit are coupled between the positive electrode of the DC power supply VBUS and the second node b. The control circuit 11 may be used to control the state of the protection circuit, for example, the control circuit 11 may control the protection circuit to be in an off state or an on state, the off state may also be called a high-impedance state, and the on state may also be a low-impedance state.

[0097] In a possible example, when the third relay 17 is turned on, if the first power device M1 is short-circuited, the control circuit 11 is also used to control the protection circuit to be in an off state, and control the second transistor T2 to be turned on through the fourth drive circuit 18, so that the energy in the inductor L can be freewheeled through the multiple second diodes D2 (the corresponding current direction is as follows Fig.13 As shown in ① in the figure), the device has an ultra-fast (for example, <1us) over-current protection capability, thereby preventing the device from being burned and improving the safety of the device.

[0098] In the above-mentioned various test modes, the control circuit 11 can control the first drive circuit 12 and the second drive circuit 13 to output pulse signals, control the on or off of the switch tube M0 and the first power device M1 through the corresponding pulse signals, and control the corresponding switching speed through the width of the pulse signal. Exemplarily, the voltage amplitude corresponding to the pulse signal can be -30V to +30V, and the corresponding switching rate can be dV / dt=0.1 to 1V / ns.

[0099] In addition, the control circuit 11 can also be used to control the output voltage of the DC power supply VBUS. For example, the output voltage can range from 0 to 1200V.

[0100] Further, such as Fig.14 As shown, the DC power supply VBUS, the control circuit 11, the first drive circuit 12, the second drive circuit 13 and the resistor R are integrated on the first circuit board I, the switch tube M0 and the first power device M1 are integrated on the second circuit board II, the inductor L, the first relay 14 and the second relay 15 are integrated on the third circuit board III, and the first circuit board I and the second circuit board II, as well as the second circuit board II and the third circuit board III are coupled through common terminals.

[0101] Optionally, the third relay 17, the third drive circuit 16, the first transistor T1, the plurality of first diodes D1, the fourth drive circuit 18, the second transistor T2 and the plurality of second diodes D2 may also be integrated on the third circuit board III.

[0102] In the embodiment of the present application, by integrating the above-mentioned devices in the device on the above-mentioned first circuit board I, second circuit board II and third circuit board III respectively, the device can support the overall replacement of different circuit boards, so that the dynamic characteristics of power devices with different packages (for example, TO247 / TO247-4 / QFN / DFN) can be tested through replacement. At the same time, by designing matching circuits according to different power devices, the parasitic parameters in the device can be effectively reduced (for example, the power loop is <20nH), the influence of parasitic parameters on the test results can be reduced, and the reliability of the test results can be improved.

[0103] Based on this, the embodiment of the present application also provides a detection method, which is applied to the detection device provided above. For the specific description of the device, please refer to the description above, and the embodiment of the present application will not be repeated here. In this method embodiment, the above-mentioned control circuit 11 is used to: control the conduction or shutdown of the switch tube through the first drive circuit, control the conduction or shutdown of the first power device through the second drive circuit, and control the conduction or shutdown of the first relay and the second relay. That is, the control circuit can be used to control the state of the switch tube, the first power device, the first relay and the second relay, so that the control circuit can control the above-mentioned devices to different states to achieve a one-stop automated test of multiple dynamic characteristics of the power device.

[0104] The detection method in the embodiment of the present application can be used to implement various tests such as double pulse, short circuit, avalanche and reverse recovery when the device is in various test modes such as double pulse, short circuit, avalanche and reverse recovery. These various tests are introduced and explained below.

[0105] In a possible embodiment, if the device is in a double pulse test mode, the method further includes: the control circuit controls the first power device to be turned on and the second relay to be turned on through the second drive circuit at a first moment; the control circuit controls the first power device to be turned off through the second drive circuit at a second moment; the control circuit controls the first power device to be turned on and the second relay to be turned on through the second drive circuit at a third moment; the control circuit controls the first power device to be turned on and the second relay to be turned on through the second drive circuit at a fourth moment.

[0106] The embodiment of the present application can realize the test of the on-characteristics and off-characteristics such as voltage rise time, voltage fall time, current rise time, current fall time of the first power device through the above-mentioned double pulse test, and can also realize the test of the on-characteristics and reverse recovery characteristics of the switch tube.

[0107] In another possible embodiment, if the device is in a short-circuit test mode, the method further includes: the control circuit controls the first power device to turn on through the second drive circuit, and controls the first relay to turn on; the control circuit controls the output voltage of the DC power supply to cause a short circuit in the first power device.

[0108] Optionally, the method further includes: the control circuit controls the short-circuit time of the first power device through the second drive circuit. In one example, the control circuit can be used to control the width of the pulse signal output by the second drive circuit to control the short-circuit time of the first power device by controlling the width of the pulse signal.

[0109] The application embodiment can test the short-circuit withstand capability of the first power device, such as the short-circuit withstand time and short-circuit withstand voltage, through the above-mentioned short-circuit test, and the device can repeatedly implement multiple short-circuit tests through the control of the control circuit, thereby improving the efficiency and accuracy of the short-circuit test, and further improving the reliability of the short-circuit test results.

[0110] In another possible embodiment, if the device is in an avalanche test mode, the method further includes: the control circuit controls the first power device to be turned on and the second relay to be turned on through a second drive circuit; the control circuit controls the second relay to be turned off. At the moment when the second relay is turned off, the current in the inductor cannot change suddenly and can only be dissipated through the first power device, thereby causing the first power device to avalanche, thereby realizing an avalanche test on the first power device.

[0111] The embodiment of the present application can implement testing of dynamic characteristics such as avalanche energy of the first power device through the above-mentioned avalanche test, and the device can repeatedly implement multiple avalanche tests through the control of the control circuit, thereby improving the efficiency and accuracy of the avalanche test, and further improving the reliability of the avalanche test results.

[0112] Furthermore, the method further includes: when the second relay is turned on, if the first power device is short-circuited, the control circuit controls the first transistor to be turned on through the third drive circuit to turn on the plurality of first diodes. Optionally, the method further includes: when the first power device is short-circuited, the control circuit controls the protection circuit to be in an off state.

[0113] In an embodiment of the present application, when the second relay is turned on, if the first power device is short-circuited, the control circuit can control the protection circuit to be in an off state, and control the first transistor to be turned on through the third drive circuit, so that the energy in the inductor can be continuously conducted through the multiple first diodes, thereby enabling the device to have ultra-fast overcurrent protection capability, preventing the device from being burned, and thereby improving the safety of the device.

[0114] In another possible embodiment, if the device is in a reverse recovery test mode, the method further includes: the control circuit controls the switch tube to turn on through the first drive circuit, controls the first power device to turn on through the second drive circuit, and controls the third relay to turn on; the control circuit controls the first power device to turn off through the second drive circuit, and at the moment the first power device is turned off, the current of the inductor is reversely continued by the first power device, that is, the first power device enters reverse recovery. The embodiment of the present application can test the reverse recovery characteristics of the first power device through the above-mentioned reverse recovery test.

[0115] Furthermore, the method further includes: when the third relay is turned on, if the first power device is short-circuited, the control circuit controls the second transistor to be turned on through the fourth drive circuit to turn on the plurality of second diodes. Optionally, the method further includes: when the first power device is short-circuited, the control circuit controls the protection circuit to be in an off state.

[0116] In an embodiment of the present application, when the third relay is turned on, if the first power device is short-circuited, the control circuit can control the protection circuit to be in an off state, and control the second transistor to be turned on through the fourth drive circuit, so that the energy in the inductor can be continuously conducted through the multiple second diodes, thereby enabling the device to have ultra-fast overcurrent protection capability, thereby preventing the device from being burned, and improving the safety of the device.

[0117] In another aspect of the present application, an integrated device is provided, which includes: a packaging substrate, and a detection device arranged on the packaging substrate, and the device is any one of the detection devices provided above.

[0118] All relevant contents related to the embodiments corresponding to the detection device in the above text can be referred to the description of the corresponding method embodiments and the embodiments corresponding to the integrated device, and the embodiments of the present application will not be repeated here.

[0119] In the method provided in the embodiment of the present application, it can be implemented in whole or in part by software, hardware or a combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, a network device or other programmable device. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, twisted pair) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any medium that a computer can access or a data storage device such as a server or a data center that includes one or more media integrations. The medium may be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., an optical disk), or a semiconductor medium (e.g., a solid state drive (SSD)), etc.

[0120] In another aspect of the present application, a computer-readable storage medium is provided, in which instructions are stored. When the instructions are executed on a device, the device executes the detection method provided above.

[0121] In another aspect of the present application, a computer program product is provided. The computer program product includes instructions. When the instructions are executed on a device, the device executes the detection method provided above.

[0122] Finally, it should be noted that the above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A detection device, characterized in that: The device comprises: a direct current power supply, a control circuit, a switch tube, a first power device, a first drive circuit, a second drive circuit, an inductor, a resistor, a first relay and a second relay; Wherein, one electrode of the switch tube and one electrode of the first power device are coupled to a first node, the other electrode of the switch tube and the positive electrode of the DC power supply are coupled to a second node, the negative electrode of the DC power supply and the other electrode of the first power device are coupled to a third node through the resistor, the first relay is coupled between the first node and the second node, the inductor and the second relay are coupled in series between the first node and the second node, the output end of the first drive circuit is coupled to the control electrode of the switch tube, and the output end of the second drive circuit is coupled to the control electrode of the first power device; The control circuit is used to control the on or off of the switch tube through the first drive circuit, control the on or off of the first power device through the second drive circuit, and control the on or off of the first relay and the second relay.

2. The device according to claim 1, characterized in that The switch tube is a diode or a second power device.

3. The device according to claim 1 or 2, characterized in that: If the device is in double pulse test mode, The control circuit is used to control the first power device to be turned on and the second relay to be turned on through the second drive circuit at a first moment; The control circuit is further configured to control the first power device to be turned off through the second drive circuit at a second moment; The control circuit is further used to control the first power device to be turned on and the second relay to be turned on through the second drive circuit at a third moment; The control circuit is further configured to control the first power device to be turned off through the second drive circuit at a fourth moment.

4. The device according to any one of claims 1 to 3, characterized in that: If the device is in short circuit test mode, The control circuit is further used to control the first power device to be turned on through the second drive circuit, and control the first relay to be turned on; The control circuit is further used to control the output voltage of the DC power supply to cause a short circuit in the first power device.

5. The device according to claim 4, characterized in that The control circuit is further used to control the short-circuit time of the first power device through the second drive circuit.

6. The device according to any one of claims 1 to 5, characterized in that: If the device is in avalanche test mode, The control circuit is further used to control the first power device to be turned on and the second relay to be turned on through the second drive circuit; The control circuit is further used to control the second relay to turn off, so as to cause the first power device to avalanche.

7. The device according to claim 6, characterized in that The apparatus further includes: a third driving circuit, and a first transistor and a plurality of first diodes coupled in series between the first node and the second node; The control circuit is further configured to control the first transistor to be turned on through the third drive circuit if the first power device is short-circuited when the second relay is turned on.

8. The device according to any one of claims 1 to 7, characterized in that: The device further comprises: a third relay, the third relay being coupled between the third node and the first end of the inductor, the first end of the inductor being coupled to the second relay; if the device is in a reverse recovery test mode, The control circuit is further used to control the switching tube to be turned on through the first driving circuit, control the first power device to be turned on through the second driving circuit, and control the third relay to be turned on; The control circuit is further used to control the first power device to be turned off through the second drive circuit, so that the first power device enters reverse recovery.

9. The device according to claim 8, characterized in that The apparatus further includes: a fourth driving circuit, and a second transistor and a plurality of second diodes coupled in series between the first node and the third node; The control circuit is further configured to control the second transistor to be turned on through the fourth drive circuit when the third relay is turned on and if the first power device is short-circuited.

10. The device according to any one of claims 1 to 9, characterized in that: The device further includes: a protection circuit coupled between the positive electrode of the DC power supply and the second node; The control circuit is further used to control the protection circuit to be in an off state when the first power device is short-circuited.

11. The device according to any one of claims 1 to 10, characterized in that: The DC power supply, the control circuit, the first drive circuit, the second drive circuit and the resistor are integrated on a first circuit board, the switch tube and the first power device are integrated on a second circuit board, the inductor, the first relay and the second relay are integrated on a third circuit board, and the first circuit board and the second circuit board, as well as the second circuit board and the third circuit board, are coupled via common terminals.

12. The device according to any one of claims 1 to 11, characterized in that: The first power device includes at least one of the following: SiC MOSFET, IGBT, and GaN HEMT.

13. A detection method, characterized in that: Applied in a detection device, the device includes: a DC power supply, a control circuit, a switch tube, a first power device, a first drive circuit, a second drive circuit, an inductor, a resistor, a first relay and a second relay; wherein one pole of the switch tube and one pole of the first power device are coupled to a first node, the other pole of the switch tube and the positive pole of the DC power supply are coupled to a second node, the negative pole of the DC power supply is coupled to the other pole of the first power device through the resistor to a third node, the first relay is coupled between the first node and the second node, the inductor and the second relay are coupled in series between the first node and the second node, the output end of the first drive circuit is coupled to the control pole of the switch tube, and the output end of the second drive circuit is coupled to the control pole of the first power device; the method includes: The control circuit controls the on / off of the switch tube through the first drive circuit, controls the on / off of the first power device through the second drive circuit, and controls the on / off of the first relay and the second relay.

14. The method according to claim 13, characterized in that If the device is in a double pulse test mode, the method further comprises: The control circuit controls the first power device to be turned on and the second relay to be turned on through the second drive circuit at a first moment; The control circuit controls the first power device to be turned off through the second drive circuit at a second moment; The control circuit controls the first power device to be turned on and the second relay to be turned on through the second drive circuit at a third moment; The control circuit controls the first power device to be turned off through the second drive circuit at a fourth moment.

15. The method according to claim 13 or 14, characterized in that If the device is in a short circuit test mode, the method further comprises: The control circuit controls the first power device to be turned on through the second drive circuit, and controls the first relay to be turned on; The control circuit controls the output voltage of the DC power supply to short-circuit the first power device.

16. The method according to claim 15, characterized in that The method further comprises: The control circuit controls the short-circuit time of the first power device through the second drive circuit.

17. The method according to any one of claims 13 to 16, characterized in that: If the device is in avalanche test mode, the method further comprises: The control circuit controls the first power device to be turned on through the second drive circuit, and controls the second relay to be turned on; The control circuit controls the second relay to be turned off, so as to cause the first power device to avalanche.

18. The method according to claim 17, characterized in that The device further includes: a third driving circuit, and a first transistor and a plurality of first diodes coupled in series between the first node and the second node; the method further includes: When the second relay is turned on, if the first power device is short-circuited, the control circuit controls the first transistor to be turned on through the third drive circuit, so as to turn on the plurality of first diodes.

19. The method according to any one of claims 13 to 18, characterized in that: The device further includes: a third relay, the third relay is coupled between the third node and the first end of the inductor, and the first end of the inductor is coupled to the second relay; if the device is in a reverse recovery test mode, the method further includes: The control circuit controls the switch tube to be turned on through the first drive circuit, controls the first power device to be turned on through the second drive circuit, and controls the third relay to be turned on; The control circuit controls the first power device to be turned off through the second drive circuit, so that the first power device enters reverse recovery.

20. The method according to claim 19, characterized in that The device further includes: a fourth driving circuit, and a second transistor and a plurality of second diodes coupled in series between the first node and the third node; the method further includes: When the third relay is turned on, if the first power device is short-circuited, the control circuit controls the second transistor to be turned on through the fourth drive circuit, so as to turn on the plurality of second diodes.

21. The method according to any one of claims 13 to 20, characterized in that: The device further includes: a protection circuit, wherein the protection circuit is coupled between the positive electrode of the DC power supply and the second node; and the method further includes: When the first power device is short-circuited, the control circuit controls the protection circuit to be in an off state.

22. An integrated device, characterized in that: The integrated device comprises: a packaging substrate, and a detection device according to any one of claims 1 to 12 arranged on the packaging substrate.

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