Wide-range probe structure for gamma dose rate measurement
By cutting SiPin semiconductor devices with different areas on the silicon wafer and switching these devices at different dose rates using analog switches, the problem of linear deviation between the existing probes from the dose under high radiation is solved, and a wide range measurement of 1μSv/h to 10Sv/h is achieved, with a simple structure and low cost.
Patent Information
- Application Number
- CN202411852938.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-16
- Publication Date
- 2025-03-28
AI Technical Summary
When the radiation intensity of the existing gamma dose rate probes increases, the probability of pulse superposition increases, resulting in a linear relationship between counting and dose. The single probe range can only cover 4 orders of magnitude and cannot meet the measurement requirements of 6 orders of magnitude. In addition, the extended range requires switching of 2 GM tube probes, resulting in larger volume and higher cost.
Three SiPin semiconductor devices with different areas are used to cut on a silicon wafer, and switch these devices at different dose rates through analog switches to achieve coverage and expansion of the measurement range, expanding the measurement range to 1μSv/h~10Sv/h.
It realizes a wide range probe structure with simple structure and easy installation and use. It has a small overall size and low cost. It can cover 8 orders of measurement ranges and meets multiple range requirements.
Smart Images
Figure CN119716952A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of radiation detection equipment, in particular to a wide-range probe structure for gamma dose rate measurement. Background Art
[0002] The SiPin type γ dose rate probe uses the ionization and excitation effect of γ rays on semiconductors to generate electron holes and form electron pulses. The back-end electronics measures the charge number of a single pulse and obtains the energy loss of the incident rays. When the energy exceeds the comparator threshold, the circuit count increases by one. The count is proportional to the dose, thus achieving dose measurement.
[0003] When the radiation intensity increases, the probability of pulse superposition increases, causing the count and dose to deviate from the linear relationship. At present, dose rate meters usually use GM probes or semiconductor probes. The counting range of GM probes within 20% is 0-10kcps, and the range is generally 1μSv / h~1Sv / h. The counting range of a single semiconductor probe or GM probe within 20% is 0-10kcps, corresponding to a range of 1μSv / h~10mSv / h. As the radiation intensity increases, the probability of pulse superposition increases, and the linear relationship between count and dose deviates. The single probe range can only cover 4 orders of magnitude, which cannot meet the requirements of general dose rate equipment.
[0004] In order to meet the measurement of 6 magnitudes, two GM tube probes need to be switched. If the working voltages of the two GMs are different, two high-voltage modules need to be used, which will make the circuit more complicated, and the volume and cost will be further increased. It can be seen that in order to expand the range, two GM tube probes are used to switch, although it can meet the range requirements, but the volume is large and the cost is high. Summary of the invention
[0005] In view of the above problems, the present invention provides a wide-range probe structure for gamma dose rate measurement, which is used to overcome the above problems or at least partially solve the above problems.
[0006] The present invention provides the following scheme:
[0007] A wide-range probe structure for gamma dose rate measurement, comprising:
[0008] A silicon wafer, on which a plurality of SiPin semiconductor devices with different areas are cut and formed, wherein the plurality of SiPin semiconductor devices are used to realize gamma dose rate measurement with different sensitivities;
[0009] The analog switch is used to switch a plurality of SiPin semiconductor devices at different dose rates to achieve coverage and expansion of the measurement range, so that the measurement range is 1 μSv / h to 10 Sv / h.
[0010] Preferably, three SiPin semiconductor devices with different areas are cut on the silicon wafer, and the areas of the three SiPin semiconductor devices are 200mm 2 , 4mm 2 and 0.08mm 2 .
[0011] Preferably: it also includes a preamplifier and a probe circuit, and the preamplifier and the probe circuit include a probe selection circuit and a preamplifier circuit.
[0012] Preferably: when the dose rate is less than 10mSv / h, the output pulse count rate of the preamplifier and probe circuit is less than 10kcps, and the analog switch selects 200mm 2 The SiPin semiconductor device, disconnected 4mm 2 The SiPin semiconductor device.
[0013] Preferably: when the dose rate is between 10mSv / h and 1Sv / h, the output pulse count rate of the preamplifier and probe circuit is greater than 10kcps, and the analog switch selects 4mm 2 The SiPin semiconductor device is disconnected 200mm 2 The SiPin semiconductor device.
[0014] Preferably: when the dose rate is greater than 1Sv / h, the output pulse count rate of the preamplifier and probe circuit is less than 10kcps, and the analog switch is disconnected for 200mm 2 The SiPin semiconductor device and 4mm 2 The SiPin semiconductor device selects 0.08mm 2 The SiPin semiconductor device.
[0015] According to the specific embodiments provided by the present invention, the present invention discloses the following technical effects:
[0016] The embodiment of the present application provides a wide-range probe structure for gamma dose rate measurement, which has a simple and reasonable structure, is easy to install and use, and uses three SiPin semiconductor devices with different cutting areas on a silicon wafer to realize a probe structure with different sensitivities. The range of each SiPin semiconductor device measurement circuit of the preamplifier circuit is 4 orders of magnitude, and SiPin semiconductor devices of different areas can be switched through analog switches, so that the range of the structure can work in 8 orders of magnitude. On the basis of being able to obtain multiple ranges, the structure has a small overall size and low cost, and is worthy of large-scale promotion and use.
[0017] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0019] Figure 1 It is a circuit schematic diagram of a preamplifier and a probe circuit provided in an embodiment of the present invention. DETAILED DESCRIPTION
[0020] The technical scheme in the embodiment of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the present invention. Obviously, the described embodiment is only a part of the embodiment of the present invention, not all of the embodiments. Based on the embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.
[0021] An embodiment of the present invention provides a wide-range probe structure for gamma dose rate measurement, which may include:
[0022] A silicon wafer, on which a plurality of SiPin semiconductor devices with different areas are cut and formed, wherein the plurality of SiPin semiconductor devices are used to realize gamma dose rate measurement with different sensitivities;
[0023] The analog switch is used to switch a plurality of SiPin semiconductor devices at different dose rates to achieve coverage and expansion of the measurement range, so that the measurement range is 1 μSv / h to 10 Sv / h.
[0024] The wide-range probe structure for gamma dose rate measurement provided in the embodiment of the present application adopts three SiPin semiconductor devices with different cutting areas on a silicon wafer to realize probes with different sensitivities. Through analog switches, the SiPin semiconductor devices are switched at different dose rates to achieve coverage and expansion of the range. The final measurement range can reach 1μSv / h~10Sv / h.
[0025] In a specific implementation, the embodiment of the present application can provide that three SiPin semiconductor devices with different areas are cut and formed on the silicon wafer, and the areas of the three SiPin semiconductor devices are 200mm and 200mm, respectively. 2 , 4mm 2 and 0.08mm 2 .
[0026] Furthermore, it also includes a preamplifier and a probe circuit, and the preamplifier and the probe circuit include a probe selection circuit and a preamplifier circuit.
[0027] When the dose rate is less than 10mSv / h, the output pulse count rate of the preamplifier and probe circuit is less than 10kcps, and the analog switch selects 200mm 2 The SiPin semiconductor device, disconnected 4mm 2 The SiPin semiconductor device.
[0028] When the dose rate is between 10mSv / h and 1Sv / h, the output pulse count rate of the preamplifier and probe circuit is greater than 10kcps, and the analog switch selects 4mm 2 The SiPin semiconductor device is disconnected 200mm 2 The SiPin semiconductor device.
[0029] When the dose rate is greater than 1Sv / h, the output pulse count rate of the preamplifier and probe circuit is less than 10kcps, and the analog switch is disconnected 200mm 2 The SiPin semiconductor device and 4mm 2 The SiPin semiconductor device selects 0.08mm 2 The SiPin semiconductor device.
[0030] The probe structure provided in the embodiment of the present application can adopt SiPin semiconductor devices with three areas, namely, 200mm 2 , 4mm 2 and 0.08mm 2 . The preamplifier and probe circuit design is as follows Figure 1 As shown, it consists of a probe selection circuit and a preamplifier. When the dose rate is less than 10mSv / h, the circuit output pulse count rate is less than 10kcps, and the analog switch selects 200mm 2 SiPin semiconductor device, disconnect mm 2 SiPin semiconductor device; when the dose rate is between 10mSv / h and 1Sv / h, the circuit output pulse count rate is greater than 10kcps, and the analog switch selects mm 2 SiPin semiconductor device, disconnect 200mm 2 SiPin semiconductor device; when the dose rate is greater than 1Sv / h, the circuit output pulse count rate is less than 10kcps, and the analog switch is disconnected 200mm 2 SiPin semiconductor devices and 4mm 2 SiPin semiconductor devices. In this way, the measurement range of the semiconductor detector can cover 1μSv / h~10Sv / h.
[0031] In summary, the wide-range probe structure for gamma dose rate measurement provided by the present application has a simple and reasonable structure, is easy to install and use, and uses three SiPin semiconductor devices with different cutting areas on a silicon wafer to realize a probe structure with different sensitivities. The range of the measurement circuit of each SiPin semiconductor device of the preamplifier circuit is 4 orders of magnitude. SiPin semiconductor devices of different areas can be switched through analog switches, so that the range of the structure can work in 8 orders of magnitude. On the basis of being able to obtain multiple ranges, the structure has a small overall size and low cost, and is worthy of large-scale promotion and use.
[0032] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.
[0033] It can be known from the description of the above implementation methods that those skilled in the art can clearly understand that the present application can be implemented by means of software plus a necessary general hardware platform. Based on such an understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product can be stored in a storage medium such as ROM / RAM, a magnetic disk, an optical disk, etc., and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in the various embodiments of the present application or certain parts of the embodiments.
[0034] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can refer to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system or system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can refer to the partial description of the method embodiment. The system and system embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without creative work.
[0035] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims
1. A wide range probe structure for gamma dose rate measurement, characterized in that: include: A silicon wafer, on which a plurality of SiPin semiconductor devices with different areas are cut and formed, wherein the plurality of SiPin semiconductor devices are used to realize gamma dose rate measurement with different sensitivities; The analog switch is used to switch a plurality of SiPin semiconductor devices at different dose rates to achieve coverage and expansion of the measurement range, so that the measurement range is 1 μSv / h to 10 Sv / h.
2. The wide-range probe structure for gamma dose rate measurement according to claim 1, characterized in that: The silicon wafer is cut to form three SiPin semiconductor devices with different areas, and the areas of the three SiPin semiconductor devices are 200 mm 2 , 4mm 2 and 0.08mm 2 .
3. The wide-range probe structure for gamma dose rate measurement according to claim 2, characterized in that: It also includes a preamplifier and a probe circuit, which includes a probe selection circuit and a preamplifier circuit.
4. The wide-range probe structure for gamma dose rate measurement according to claim 3, characterized in that: When the dose rate is less than 10mSv / h, the output pulse count rate of the preamplifier and probe circuit is less than 10kcps, and the analog switch selects 200mm 2 The SiPin semiconductor device, disconnected 4mm 2 The SiPin semiconductor device.
5. The wide-range probe structure for gamma dose rate measurement according to claim 3, characterized in that: When the dose rate is between 10mSv / h and 1Sv / h, the output pulse count rate of the preamplifier and probe circuit is greater than 10kcps, and the analog switch selects 4mm 2 The SiPin semiconductor device is disconnected 200mm 2 The SiPin semiconductor device.
6. The wide-range probe structure for gamma dose rate measurement according to claim 3, characterized in that: When the dose rate is greater than 1Sv / h, the output pulse count rate of the preamplifier and probe circuit is less than 10kcps, and the analog switch is disconnected 200mm 2 The SiPin semiconductor device and 4mm 2 The SiPin semiconductor device selects 0.08mm 2 The SiPin semiconductor device.