Storage control structure, control adjustment method and memory

Abstract

The invention relates to the technical field of semiconductors, in particular to a storage control structure, a control adjusting method and a memorizer, and the storage control structure comprises a control module which is configured to receive a configuration signal and output a first control signal matched with the configuration signal; and the parameter module stores a plurality of preset operation parameters and is configured to receive the first control signal and output a target operation parameter matched with the first control signal from the plurality of preset operation parameters. The storage control structure provided by the invention aims to improve the read-write tolerance of the storage unit, so that the service life of the memory is prolonged.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a storage control structure, a control and adjustment method, and a memory. Background Art

[0002] The memory is used to store information in various electronic devices (such as computers, wireless communication devices, and cameras, etc.), and the information is stored by regulating the different states of the memory. With the rapid development of artificial intelligence technology, higher requirements are placed on the computing performance, reading performance, writing performance, reliability, and data retention capabilities of electronic devices.

[0003] Read and write endurance is an indicator to measure the reliability of memory. Due to long-term, large-scale read and write operations and device aging, the storage medium will experience decreased storage reliability and increased read and write error rates in the later stages of its service life. Summary of the invention

[0004] The main purpose of the present disclosure is to provide a storage control structure, a control and adjustment method and a memory, aiming to improve the read and write endurance of the storage unit, thereby improving the service life of the memory.

[0005] To achieve the above objectives, the present disclosure proposes a storage control structure, including: a control module, configured to receive a configuration signal and output a first control signal matching the configuration signal; a parameter module, storing a plurality of preset operating parameters, configured to receive the first control signal and output a target operating parameter matching the first control signal from among the plurality of preset operating parameters.

[0006] In some embodiments, the control module is also configured to receive and identify control instructions to generate operation commands; the storage control structure also includes: an execution module, connecting the parameter module and the control module, and configured to execute the operation command based on the target operation parameters.

[0007] In some embodiments, the preset operation parameters include preset time parameters and preset intensity parameters; the parameter module includes: a time parameter unit, configured to receive the first control signal and output a target time parameter matching the first control signal from a plurality of the preset time parameters; an intensity parameter unit, configured to receive the first control signal and output a target intensity parameter matching the first control signal from a plurality of the preset intensity parameters.

[0008] In some embodiments, the parameter module includes: a storage unit configured to store a plurality of the preset time parameters; a selection unit configured to output a target time parameter matching the first control signal from a plurality of preset time parameters based on a first control signal; the operation command includes at least one stage, and the operation command corresponds to different first control signals in different stages.

[0009] In some embodiments, the preset intensity parameters include: a preset current parameter and a preset voltage parameter; the intensity parameter unit includes: a current parameter unit, configured to receive the first control signal and output a target current parameter matching the first control signal from a plurality of the preset current parameters; a voltage parameter unit, configured to receive the first control signal and output a target voltage parameter matching the first control signal from a plurality of the preset voltage parameters.

[0010] In some embodiments, the execution module includes: a first execution unit, connected to the time parameter unit and the control module, configured to execute the operation command based on the preset time parameter; a second execution unit, connected to the intensity parameter unit and the control module, configured to execute the operation command based on the preset intensity parameter.

[0011] In some embodiments, the control module is also configured to identify the control instruction to generate a second control signal; the parameter module is also configured to receive the second control signal and output a target operating parameter matching the second control signal from a plurality of preset operating parameters; the control module also includes: a selection module; the selection module includes a first input terminal, a second input terminal, a control terminal and an output terminal; the first input terminal, the second input terminal and the control terminal are connected to the control module, and the output terminal is connected to the parameter module; the control module is also configured to output a selection signal matching the configuration signal; the selection module is configured to provide the first control signal or the second control signal to the parameter module based on the selection signal.

[0012] In some embodiments, the storage control structure further includes: a statistical module; the statistical module is connected to the control module, configured to receive the operation command, count the operation command, and adjust the generated configuration signal when the count value meets a preset condition.

[0013] Correspondingly, the present disclosure also proposes a control and adjustment method, which is applied to the storage control structure provided in the above embodiment, including: configuring multiple preset operating parameters and determining the corresponding relationship between the preset operating parameters and a first control signal; receiving a configuration signal, and outputting a first control signal matching the configuration signal based on the configuration signal; and outputting a target operating parameter matching the first control signal from a plurality of the preset operating parameters based on the first control signal.

[0014] Correspondingly, the present disclosure also proposes a memory, comprising: the storage control structure provided in the above embodiment; a storage array, connected to the storage control structure to obtain target operation parameters provided by the storage control structure, wherein the target operation parameters are operation parameters corresponding to the operation command when the memory executes the operation command.

[0015] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0016] The storage control structure provided in the embodiment of the present disclosure selects a target operating parameter from a plurality of preset operating parameters through a first control signal, and adjusts the operating command based on the target operating parameter, so as to execute the same operating command based on different operating parameters at different usage times of the memory, thereby improving the service life of the memory.

[0017] In some embodiments, a target operating parameter can be selected from a plurality of preset operating parameters through a second control signal, and the operating command can be adjusted based on the target operating parameter; the second control signal is directly obtained from the control instruction, and the control instruction, as an external instruction of the storage control structure, can be issued by the user, that is, the target operating parameter is selected through the second control signal, so that the user can directly set the operating parameter corresponding to the operating command to achieve flexibility in the use of the memory.

[0018] In some embodiments, the selection signal is used to implement selective shielding of the first control signal or the second control signal, thereby preventing the storage control structure from repeatedly outputting the target operation parameter, thereby preventing the memory from repeatedly executing or erroneously executing the operation command.

[0019] In some embodiments, the number of operation commands is counted by a statistical module, and then a configuration signal is generated to adjust the target operation parameters of the operation command, thereby achieving adaptive control of the operation command to adaptively improve the service life of the memory. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0021] Figure 1 A schematic diagram of the structure of a storage control structure provided in an embodiment of the present disclosure;

[0022] Figure 2 A schematic diagram of the structure of a parameter module provided in an embodiment of the present disclosure;

[0023] Figure 3 A schematic diagram of a storage control structure having an execution module under a specific control module structure provided in an embodiment of the present disclosure;

[0024] Figure 4 A schematic diagram of a storage control structure having a selection function for a first control signal and a second control signal provided in an embodiment of the present disclosure;

[0025] Figure 5 An application example of a specific memory provided in an embodiment of the present disclosure;

[0026] Figure 6 A schematic diagram of a control and adjustment method provided by an embodiment of the present disclosure;

[0027] Figure 7 A schematic diagram of another control and adjustment method provided in an embodiment of the present disclosure.

[0028] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0029] As known from the background art, due to long-term, large-scale read and write operations and device aging, the storage medium will experience problems of reduced storage reliability and increased read and write error rate in the later period of its service life.

[0030] The more times traditional non-volatile memory is read and written, the more failures it will experience and the shorter its storage period will be.

[0031] Phase Change Memory (PCM) has a characteristic that the shelf life has little to do with the number of read and write cycles. If the read and write capabilities of PCM are guaranteed, the PCM life cycle may be extended.

[0032] After a large number of read and write operations on the PCM, some storage cells are damaged and cannot be repaired. Other storage cells react worse to write current than when they were first used. If the write operation configuration set at the factory is still used and cannot be written correctly, it may be considered that the storage cell is damaged.

[0033] If the read and write endurance of the storage unit can be improved and the write error rate can be reduced through some technical means in the later stage of the PCM's life, the purpose of increasing the read and write life of the PCM can be achieved.

[0034] In order to solve the above problems, an embodiment of the present disclosure proposes a storage control structure, including: a control module, configured to receive a configuration signal, and output a first control signal matching the configuration signal; a parameter module, storing a plurality of preset operating parameters, configured to receive the first control signal, and output a target operating parameter matching the first control signal from the plurality of preset operating parameters.

[0035] The storage control structure provided in the embodiment of the present disclosure selects a target operating parameter from a plurality of preset operating parameters through a first control signal, and adjusts the operating command based on the target operating parameter, so as to execute the same operating command based on different operating parameters at different usage times of the memory, thereby improving the service life of the memory.

[0036] Specifically, as the memory is used for a longer time, a write command is executed through a longer operation time to ensure that data is correctly written into the storage unit, thereby reducing the write error rate of the memory and improving the service life of the memory.

[0037] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] In addition, in the present invention, descriptions such as "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0039] refer to Figure 1 , Figure 1 This is a schematic diagram of the structure of the storage control structure provided in this embodiment. Specifically, the storage control structure 100 includes: a control module 101 and a parameter module 102.

[0040] The control module 101 is configured to receive a configuration signal and output a first control signal matching the configuration signal.

[0041] In some embodiments, a configuration signal is inputted from outside into the storage control structure 100 to control the parameter module 102 to output corresponding operation parameters based on external commands; for example, the configuration signal may be provided by a storage controller.

[0042] In some embodiments, the configuration signal is generated internally in the storage control structure 100 to control the parameter module 102 to output corresponding operating parameters based on external commands.

[0043] In some embodiments, the control module 101 may be set based on a first register storing a correspondence between a configuration signal and a first control signal. The control module 101 outputs a first control signal corresponding to the configuration signal based on the received configuration signal.

[0044] In some embodiments, the control module 101 may also be implemented by a mode register in the memory, that is, the control module 101 includes a mode register. In this case, the configuration signal is a mode register configuration instruction, and the mode register configuration instruction is issued by the storage controller.

[0045] The parameter module 102 stores a plurality of preset operating parameters. The parameter module 102 is configured to receive a first control signal and output a target operating parameter that matches the first control signal from among the plurality of preset operating parameters.

[0046] In some embodiments, the parameter module 102 can be set based on a second register, in which a correspondence between the first control signal and a preset operating parameter is stored. The parameter module 102 outputs a target operating parameter corresponding to the first control signal based on the received first control signal.

[0047] In some embodiments, the parameter module 102 may be set based on a one time programmable (OTP) device. For example, the parameter module 102 may be set based on a storage unit composed of an electronic fuse (efuse).

[0048] In some embodiments, the preset operation parameters include preset time parameters and preset intensity parameters, and the parameter module 102 includes a time parameter unit and an intensity parameter unit; wherein the time parameter unit is configured to receive a first control signal and output a target time parameter matching the first control signal from a plurality of preset time parameters; the intensity parameter unit is configured to receive a first control signal and output a target intensity parameter matching the first control signal from a plurality of preset intensity parameters.

[0049] In some embodiments, the preset intensity parameters include preset current parameters and preset voltage parameters, and the intensity parameter unit includes a current parameter unit and a voltage parameter unit; wherein the current parameter unit is configured to receive a first control signal and output a target current parameter matching the first control signal from a plurality of preset current parameters, and the voltage parameter unit is configured to receive a first control signal and output a target voltage parameter matching the first control signal from a plurality of preset voltage parameters.

[0050] In one example, refer to Figure 2 , Figure 2 This is a schematic diagram of the structure of the parameter module provided in this embodiment. The parameter module 102 includes: a storage unit OTP and a selection circuit T_MUX.

[0051] Specifically, the storage unit OTP is used to output preset operating parameters 1 to preset operating parameters n, and the selection circuit T_MUX is used to receive preset operating parameters 1 to preset operating parameters n and a first control signal, and based on the first control signal, select and output a preset operating parameter from the preset operating parameters 1 to preset operating parameters n as the target operating parameter.

[0052] Based on the above description, it can be known that the target operation parameters output by the parameter module 102 are the execution parameters when the memory executes the corresponding operation command. The parameters of the operation command can be controlled through the selection output of the parameter module 102, so as to realize the execution of the same operation command based on different operation parameters at different usage times of the memory, thereby improving the service life of the memory.

[0053] In some embodiments, reference Figure 3 , Figure 3 The structural diagram of the storage control structure under the specific control module structure provided in this embodiment and having an execution module, the control module 101 is also configured to receive and identify control instructions to generate operation commands; the storage control structure 100 also includes an execution module 103, the execution module 103 is connected to the parameter module 102 and the control module 101, and the execution module 103 is configured to execute the operation command based on the target operation parameter.

[0054] In some embodiments, the control instructions are inputted into the storage control structure 100 from the outside. For example, the control instructions may be provided by a storage controller.

[0055] Specifically, the control module 101 identifies the control instruction to generate a corresponding operation command for execution by the execution module 103 , and the execution module 103 executes the operation command based on the target operation parameter.

[0056] In some embodiments, the control module 101 includes a compile unit 202 and a configuration unit 201 .

[0057] The compiling unit 202 is used to identify control instructions to generate operation commands; the configuring unit 201 is used to receive a configuration signal and output a first control signal matching the configuration signal.

[0058] In summary, the storage control structure 100 generates a corresponding first control signal based on the configuration signal, and then selects a target operating parameter from a plurality of operating parameters based on the first control signal, so that the storage control structure 100 executes the operating command based on the target operating parameter.

[0059] In some embodiments, the operation command includes at least one stage, the target operation parameter includes at least one sub-parameter, and the execution module 103 is configured to execute the operation command based on the sub-parameter corresponding to the stage.

[0060] In one example, the operation command includes N stages, such as stage 1, stage 2, stage 3...stage N; when configuring the operation parameters, the operation parameters include N sub-parameters, such as sub-parameter 1, sub-parameter 2, sub-parameter 3...sub-parameter N; stage 1 corresponds to sub-parameter 1, stage 2 corresponds to sub-parameter 2, stage 3 corresponds to sub-parameter 3...stage N corresponds to sub-parameter N, and the execution module 103 executes the operation command according to the stage based on the sub-parameters corresponding to the stage.

[0061] In this example, the operation command corresponds to the operation parameter one by one. In the process of executing the operation command, the same first control signal can realize the correspondence between the operation parameter and the operation command.

[0062] In another example, the operation command includes N stages, such as stage 1, stage 2, stage 3...stage N; when configuring the operation parameters, when the execution module executes each stage, the storage control structure 100 selects the corresponding target operation parameters through the corresponding first control signal.

[0063] In this example, the stages correspond to the operation parameters one by one. In the process of executing the operation command, the operation command needs to be implemented according to the first control signal corresponding to each stage, that is, one operation command corresponds to multiple first control signals.

[0064] In some embodiments, the operation command includes a read command or a write command.

[0065] In some examples, if the operation command includes a read command, the target operation parameter is used to control the execution of the read command by the memory; in one example, if the target operation parameter is a time parameter, the time parameter is used to control the execution time of the read command.

[0066] In one example, if the operation command includes a write command, the target operation parameter is used to control the execution of the write command by the memory; in one example, if the target operation parameter is a time parameter, the time parameter is used to control the execution time of the write command; in one example, if the target operation parameter is an intensity parameter, the intensity parameter is used to control the execution intensity of the write command, including but not limited to write current, write voltage, etc.

[0067] In an example, if the write command includes write stage 1, write stage 2, and write stage 3, if the storage control structure 100 includes three configuration modes, when the configuration signal configures the storage control structure 100 to be in configuration mode one, write stage 1, write stage 2, and write stage 3 correspond to preset time parameter 1, preset time parameter 2, and preset time parameter 3, respectively; when the configuration signal configures the storage control structure 100 to be in configuration mode two, write stage 1, write stage 2, and write stage 3 correspond to preset time parameter 4, preset time parameter 5, and preset time parameter 6, respectively; when the configuration signal configures the storage control structure 100 to be in configuration mode three, write stage 1, write stage 2, and write stage 3 correspond to preset time parameter 7, preset time parameter 8, and preset time parameter 9, respectively. For specific configurations, please refer to Table 1 below.

[0068] Table 1 is an example of the preset time parameter configuration of the storage control structure 100:

[0069] Write Phase 1 Write Phase 2 Write Phase 3 Configuration Mode 1 Preset time parameter 1 Preset time parameter 2 Preset time parameter 3 Configuration Mode 2 Preset time parameter 4 Preset time parameter 5 Preset time parameter 6 Configuration mode three Preset time parameter 7 Preset time parameter 8 Preset time parameter 9

[0070] It should be noted that the above configuration examples of write commands and preset time parameters do not constitute a limitation on this embodiment. In specific applications, the number of specific configuration modes and the number of write phases can be adjusted based on the actual application of the storage control structure 100. In addition, the specific value configurations of the preset time parameters 1 to 9 can be the same or different, and can be adjusted based on the actual application of the storage control structure 100.

[0071] It should also be noted that the above description uses the example of the parameter module 102 outputting the target operation parameter based on the first control signal as an example, which is only used to reflect the output logic of the parameter module 102 for the preset time parameter and the preset intensity parameter. In specific applications, the parameter module 102 can also output the target operation parameter based on the second control signal. In addition, in other embodiments, in addition to the preset time parameter and the preset intensity parameter, the preset operation parameter can also include parameters such as the operation interval, the operation object, and the combination of these parameters.

[0072] In an example, if the write command includes write stage 1, write stage 2, and write stage 3, if the storage control structure 100 includes three configuration modes, when the configuration signal configures the storage control structure 100 to be in configuration mode one, write stage 1, write stage 2, and write stage 3 correspond to preset current parameter 1, preset current parameter 2, and preset current parameter 3, respectively; when the configuration signal configures the storage control structure 100 to be in configuration mode two, write stage 1, write stage 2, and write stage 3 correspond to preset current parameter 4, preset current parameter 5, and preset current parameter 6, respectively; when the configuration signal configures the storage control structure 100 to be in configuration mode three, write stage 1, write stage 2, and write stage 3 correspond to preset current parameter 7, preset current parameter 8, and preset current parameter 9, respectively. For specific configurations, please refer to Table 2 below.

[0073] Table 2 is an example of the preset current parameter configuration of the storage control structure 100:

[0074] Write Phase 1 Write Phase 2 Write Phase 3 Configuration Mode 1 Preset current parameter 1 Preset current parameter 2 Preset current parameter 3 Configuration Mode 2 Preset current parameter 4 Preset current parameter 5 Preset current parameter 6 Configuration mode three Preset current parameter 7 Preset current parameter 8 Preset current parameter 9

[0075] It should be noted that the above configuration examples of write commands and preset current parameters do not constitute a limitation on this embodiment. In specific applications, the number of specific configuration modes and the number of write phases can be adjusted based on the actual application of the storage control structure 100. In addition, the specific value configurations of the preset current parameters 1 to 9 can be the same or different, and can be adjusted based on the actual application of the storage control structure 100.

[0076] In an example, if the write command includes write stage 1, write stage 2, and write stage 3, if the storage control structure 100 includes three configuration modes, when the configuration signal configures the storage control structure 100 to be in configuration mode one, write stage 1, write stage 2, and write stage 3 correspond to preset voltage parameter 1, preset voltage parameter 2, and preset voltage parameter 3, respectively; when the configuration signal configures the storage control structure 100 to be in configuration mode two, write stage 1, write stage 2, and write stage 3 correspond to preset voltage parameter 4, preset voltage parameter 5, and preset voltage parameter 6, respectively; when the configuration signal configures the storage control structure 100 to be in configuration mode three, write stage 1, write stage 2, and write stage 3 correspond to preset voltage parameter 7, preset voltage parameter 8, and preset voltage parameter 9, respectively. For specific configurations, please refer to Table 3 below.

[0077] Table 3 is an example of the preset voltage parameter configuration of the storage control structure 100:

[0078] Write Phase 1 Write Phase 2 Write Phase 3 Configuration Mode 1 Preset voltage parameter 1 Preset voltage parameter 2 Preset voltage parameter 3 Configuration Mode 2 Preset voltage parameter 4 Preset voltage parameter 5 Preset voltage parameter 6 Configuration mode three Preset voltage parameter 7 Preset voltage parameter 8 Preset voltage parameter 9

[0079] It should be noted that the above configuration examples of write commands and preset voltage parameters do not constitute a limitation on this embodiment. In specific applications, the number of specific configuration modes and the number of write phases can be adjusted based on the actual application of the storage control structure 100. In addition, the specific value configurations of the preset voltage parameters 1 to 9 can be the same or different, and can be adjusted based on the actual application of the storage control structure 100.

[0080] It should also be noted that the above description uses the example of the intensity parameter unit outputting the target operating parameter based on the first control signal as an example, which is only used to reflect the output logic description of the intensity parameter unit for the preset current parameter and the preset voltage parameter. In specific applications, the intensity parameter unit can also output the target operating parameter based on the second control signal. In addition, in other embodiments, the preset intensity parameters can include other electrical signal parameters, as well as combinations of these electrical signal parameters, in addition to the preset voltage parameters and the preset current parameters.

[0081] In some embodiments, the control module 101 is further configured to identify a control instruction to generate a second control signal, and the parameter module 102 is further configured to receive the second control signal and output a target operating parameter matching the second control signal from a plurality of preset operating parameters.

[0082] The difference between the first control signal and the second control signal is that the first control signal is pre-stored in the control module 101, and the control module 101 directly selects the pre-configured first control signal based on the configuration signal; while the second control signal is directly obtained from the control instruction, and the control instruction, as an external instruction of the storage control structure 100, can be issued by the user, that is, the target operation parameter is selected through the second control signal, so that the user can directly set the operation parameter corresponding to the operation command to achieve flexibility in the use of the memory.

[0083] In some embodiments, the compiling unit 202 is used to identify the control instruction to generate a second control signal, and the parameter module 102 completes the output of the target operation parameter based on the second control signal.

[0084] It should be noted that the output logic of the parameter module 102 based on the second control signal is the same as the output logic of the parameter module 102 based on the first control signal, which will not be described in detail in this embodiment.

[0085] Based on the foregoing, it can be known that the parameter module 102 can output the target operating parameter based on the first control signal, or output the target operating parameter based on the second control signal. To avoid repeated output of the parameter module 102, it is necessary to set the control logic to shield one of the first control signal or the second control signal.

[0086] In some embodiments, reference Figure 4 , Figure 4 The schematic diagram of the structure of the storage control structure with the function of selecting the first control signal and the second control signal provided in this embodiment, the storage control structure also includes a selection module 104. Specifically, the selection module 104 includes a first input terminal, a second input terminal, a control terminal and an output terminal; wherein the first input terminal, the second input terminal and the control terminal are connected to the control module 101, and the output terminal is connected to the parameter module 102, the control module 101 is further configured to output a selection signal matching the configuration signal, and the selection module 104 is configured to provide the first control signal or the second control signal to the parameter module 102 based on the selection signal.

[0087] Specifically, the control module 101 generates a selection signal based on the configuration signal, and the selection signal is used to control the selection module 104 to output the corresponding first control signal or the second control signal, so that the parameter module 102 can output the target operation parameter.

[0088] The selection signal is used to realize the selection shielding of the first control signal or the second control signal, so as to avoid the storage control structure from repeatedly outputting the target operation parameter, thereby avoiding the memory from repeatedly executing or erroneously executing the operation command.

[0089] In some embodiments, the first input terminal and the control terminal of the selection module 104 are connected to the configuration unit 201 , the second input terminal is connected to the compilation unit 202 , and the output terminal is connected to the parameter module 102 .

[0090] In one example, taking the preset operation parameters including the preset time parameter, the preset current parameter and the preset voltage parameter as an example, reference Figure 5 , Figure 5 An application example of a specific memory provided in this embodiment is described in detail below with reference to the accompanying drawings.

[0091] The memory includes a phase change memory PCM chip and a memory controller controller (200). The memory controller 200 sends configuration signals and control instructions. The mode register MODE_REG (as a configuration unit 201) receives and identifies the configuration command to output a first control signal. In this example, the first control signal includes MREG_TIME_SELECT, CURRENT_SELECT and VOLTAGE_SELECT, wherein MREG_TIME_SELECT is used to obtain a target time parameter, CURRENT_SELECT is used to obtain a target current parameter, and VOLTAGE_SELECT is used to obtain a target voltage parameter. The compilation unit CMD_DECODER (202) is used to identify the control instruction to generate an operation command. This example takes the operation command as a write command wr_cmd as an example for explanation. The compilation unit 202 is also used to identify the control instruction to generate a second control signal CMD_TIME_SELECT. It should be noted that the different types of the first control signal and the second control signal in this example do not constitute a limitation on this embodiment. The configuration unit 201 is further configured to generate a selection signal CMD_TIME_SELECT according to the configuration instruction, and the selection module selects to output the first control signal MREG_TIME_SELECT or the second control signal CMD_TIME_SELECT based on the selection signal CMD_TIME_SELECT.

[0092] The parameter module includes a time parameter unit 301, a current parameter unit 302 and a voltage parameter unit 303. The time parameter unit 301 includes OTP1 and T_MUX1, wherein OTP1 is used to output multiple preset time parameters WR_T0_TRIM~WR_Tn_TRIM, and T_MUX1 outputs a target time parameter WR_T_TRIM based on a first control signal MREG_TIME_SELECT or a second control signal CMD_TIME_SELECT; the current parameter unit 302 includes OTP2 and I_MUX2, wherein OTP2 is used to output multiple preset current parameters WR_I0_TRIM~WR_In_TRIM, and I_MUX2 outputs a target current signal WR_I_TRIM based on a first control signal CURRENT_SELECT; the voltage parameter unit 303 includes OTP3 and V_MUX3, wherein OTP3 is used to output multiple preset voltage parameters WR_V0_TRIM~WR_Vn_TRIM, and V_MUX3 outputs a target voltage signal WR_V_TRIM based on a first control signal VOLTAGE_SELECT.

[0093] In some embodiments, the execution module includes a first execution unit 401 and a second execution unit 402. The first execution unit is connected to the time parameter unit 301 and the control module, and is configured to execute the operation command based on the preset time parameter; the second execution unit 402 is connected to the intensity parameter unit and the control module, and executes the command based on the preset intensity parameter.

[0094] Continue to refer Figure 5 The execution module is used to execute a write command wr_cmd on a storage array ARRAY (400), wherein the execution module includes a first execution unit WRITE_OP (401) and a second execution unit ANA_OP (402), wherein the first execution unit 401 executes the write command wr_cmd based on WR_T_TRIM, and the second execution unit 402 executes the write command wr_cmd based on WR_I_TRIM and WR_V_TRIM.

[0095] In some embodiments, the storage control structure 100 further includes a statistical module (not shown), which is connected to the control module 101 and configured to receive operation commands, count the operation commands, and adjust the generated configuration signal when the count value meets a preset condition.

[0096] Based on the above, it can be known that a large number of read and write operations of PCM will cause the storage reliability of the storage medium to decrease in the later period of its service life. The statistical module counts the number of operation commands, and then generates a configuration signal to adjust the target operation parameters of the operation command, thereby realizing adaptive control of the operation command to adaptively improve the service life of the memory.

[0097] In summary, the target operating parameter is selected from multiple preset operating parameters through the first control signal, and the operating command is adjusted based on the target operating parameter, so as to execute the same operating command based on different operating parameters at different usage times of the memory, thereby improving the service life of the memory.

[0098] It should be noted that, in the absence of conflict, the features disclosed in the storage control structure 100 provided in the above embodiments can be randomly combined to obtain a new storage control structure 100 embodiment.

[0099] Accordingly, an embodiment of the present disclosure also provides a control and adjustment method to increase the service life of a memory.

[0100] The control and adjustment method is applied to the storage control structure provided in the above embodiment, and includes steps 51 to 53. Among them, step 51: configure multiple preset operating parameters, and determine the corresponding relationship between the preset operating parameters and the first control signal. Step 52: receive the configuration signal, and output the first control signal matching the configuration signal based on the configuration signal. Step 53: output the target operating parameter matching the first control signal from the multiple preset operating parameters based on the first control signal.

[0101] Specifically, step 51 is used to configure the correspondence between the preset operating parameters and the first control signal, so as to achieve the target operating parameters outputted by adjusting the first control signal based on the configuration signal. Step 52 is to output the first control signal related to the configuration signal based on the configuration signal in the actual application, so as to output the target operating parameters based on the first control signal later. Step 53 is to output the target operating parameters based on the first control signal.

[0102] In one example, reference Figure 6 , Figure 6 This is a schematic diagram of a control and adjustment method provided in this embodiment. Step 52 and step 53 include: step 501 to step 505.

[0103] Step 501 : The storage controller sends a mode_reg command, where the mode_reg command is a mode register configuration command, namely, the configuration command in the above description, to change the configuration of a preset current parameter, a preset voltage parameter, and a preset time parameter.

[0104] Step 502: The memory selects corresponding parameter output according to the required preset current parameter, preset voltage parameter and preset time parameter configuration.

[0105] Specifically, based on the first control command, the storage chip selects a preset current parameter, a preset voltage parameter, and a preset time parameter related to the first control command as a target current parameter, a target voltage parameter, and a target time parameter to be output.

[0106] Step 503, the storage controller waits for parameter selection to be completed; Step 504, the memory controller sends a write command; Step 505, the storage chip completes the write command.

[0107] Steps 503 to 505 are that the storage chip completes the execution of the write command based on the target current parameter, the target voltage parameter and the target time parameter.

[0108] In some embodiments, the storage control structure also includes a selection module, and the control adjustment method also includes: determining the correspondence between the preset operating parameters and the second control signal; receiving a control command, identifying the control command to obtain a second control signal and a configuration signal, and outputting a selection signal matching the configuration signal based on the configuration signal; based on the selection signal, selecting to output a target operating parameter matching the first control signal from a plurality of preset operating parameters based on the first control signal, or outputting a target operating parameter matching the second control signal from a plurality of preset operating parameters based on the second control signal.

[0109] In one example, reference Figure 7 , Figure 7 A schematic diagram of another control and adjustment method provided for this embodiment also includes step 601 before executing step 501, where the storage controller sends a mode_reg command, where the mode_reg command is a mode register configuration command, i.e., the configuration command in the above description, and the configuration command is also used to select a preset operating parameter based on the first control signal or the second control signal based on the selection signal TIME_SEL.

[0110] In one example, taking the preset operation parameters including the preset time parameter, the preset current parameter and the preset voltage parameter as an example, reference Figure 5 The memory includes a phase change memory PCM chip and a memory controller controller (200). The memory controller 200 sends configuration signals and control instructions. The mode register MODE_REG (as a configuration unit 201) receives and identifies the configuration command to output a first control signal. In this example, the first control signal includes MREG_TIME_SELECT, CURRENT_SELECT and VOLTAGE_SELECT, wherein MREG_TIME_SELECT is used to obtain a target time parameter, CURRENT_SELECT is used to obtain a target current parameter, and VOLTAGE_SELECT is used to obtain a target voltage parameter. The compilation unit CMD_DECODER (202) is used to identify the control instruction to generate an operation command. This example takes the operation command as a write command wr_cmd as an example for explanation. The compilation unit 202 is also used to identify the control instruction to generate a second control signal CMD_TIME_SELECT. It should be noted that the different types of the first control signal and the second control signal in this example do not constitute a limitation on this embodiment. The configuration unit 201 is further configured to generate a selection signal CMD_TIME_SELECT according to the configuration instruction, and the selection module selects to output the first control signal MREG_TIME_SELECT or the second control signal CMD_TIME_SELECT based on the selection signal CMD_TIME_SELECT.

[0111] The parameter module includes a time parameter unit 301, a current parameter unit 302 and a voltage parameter unit 303. The time parameter unit 301 includes OTP1 and T_MUX1, wherein OTP1 is used to output multiple preset time parameters WR_T0_TRIM~WR_Tn_TRIM, and T_MUX1 outputs a target time parameter WR_T_TRIM based on a first control signal MREG_TIME_SELECT or a second control signal CMD_TIME_SELECT; the current parameter unit 302 includes OTP2 and I_MUX2, wherein OTP2 is used to output multiple preset current parameters WR_I0_TRIM~WR_In_TRIM, and I_MUX2 outputs a target current signal WR_I_TRIM based on a first control signal CURRENT_SELECT; the voltage parameter unit 303 includes OTP3 and V_MUX3, wherein OTP3 is used to output multiple preset voltage parameters WR_V0_TRIM~WR_Vn_TRIM, and V_MUX3 outputs a target voltage signal WR_V_TRIM based on a first control signal VOLTAGE_SELECT.

[0112] The execution module is used to execute a write command wr_cmd on a storage array ARRAY (400), wherein the execution module comprises a first execution unit WRITE_OP (401) and a second execution unit ANA_OP (402), wherein the first execution unit 401 executes the write command wr_cmd based on WR_T_TRIM, and the second execution unit 402 executes the write command wr_cmd based on WR_I_TRIM and WR_V_TRIM.

[0113] In summary, the target operating parameter is selected from multiple preset operating parameters through the first control signal, and the operating command is adjusted based on the target operating parameter, so as to execute the same operating command based on different operating parameters at different usage times of the memory, thereby improving the service life of the memory.

[0114] Accordingly, an embodiment of the present disclosure also proposes a memory, which includes the storage control structure 100 and a storage array described in the above embodiment, and the storage array is connected to the storage control structure 100 to obtain target operation parameters provided by the storage control structure 100, and the target operation parameters are operation parameters corresponding to the operation command when the memory executes the operation command.

[0115] In some embodiments, the operation commands include write commands and read commands.

[0116] In some embodiments, the operating parameters include a time operating parameter, a current operating parameter, and a voltage operating parameter.

[0117] The storage control structure Figure 1 to Figure 5As well as the description of the related embodiments, they are not elaborated here.

[0118] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, please refer to the detailed description of other embodiments above, and will not be repeated here.

[0119] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of the present disclosure. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and corrections to the present disclosure. Such modifications, improvements and corrections are suggested in the present disclosure, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of the present disclosure.

[0120] The above is a detailed introduction to a storage control structure, a control and adjustment method, and a memory provided by an embodiment of the present disclosure. Specific examples are used in this article to illustrate the principles and implementation methods of the present disclosure. The description of the above embodiments is only used to help understand the method of the present disclosure and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present disclosure, there will be changes in the specific implementation method and application scope. In summary, it can be seen that the content of this specification should not be understood as a limitation on the present disclosure.

Claims

1. A storage control structure, characterized in that: include: A control module, configured to receive a configuration signal and output a first control signal matching the configuration signal; The parameter module stores a plurality of preset operating parameters and is configured to receive the first control signal and output a target operating parameter matching the first control signal from among the plurality of preset operating parameters.

2. The storage control structure according to claim 1, characterized in that: The control module is further configured to receive and identify control instructions to generate operation commands; The storage control structure further includes: an execution module connected to the parameter module and the control module, and configured to execute the operation command based on the target operation parameter.

3. The storage control structure according to claim 1, characterized in that: The preset operation parameters include preset time parameters and preset intensity parameters; the parameter module includes: a time parameter unit configured to receive the first control signal and output a target time parameter matching the first control signal from among the plurality of preset time parameters; The intensity parameter unit is configured to receive the first control signal and output a target intensity parameter matching the first control signal from among the plurality of preset intensity parameters.

4. The storage control structure according to claim 3, characterized in that: The parameter module includes: A storage unit, configured to store a plurality of the preset time parameters; A selection unit configured to output a target time parameter matching the first control signal from among a plurality of preset time parameters based on the first control signal; The operation command includes at least one stage, and the operation command corresponds to different first control signals in different stages.

5. The storage control structure according to claim 3, characterized in that: The preset intensity parameters include: preset current parameters and preset voltage parameters; the intensity parameter unit includes: a current parameter unit, configured to receive the first control signal and output a target current parameter matching the first control signal from among the plurality of preset current parameters; The voltage parameter unit is configured to receive the first control signal and output a target voltage parameter matching the first control signal from among the plurality of preset voltage parameters.

6. The storage control structure according to claim 3, characterized in that: The execution module includes: A first execution unit, connected to the time parameter unit and the control module, and configured to execute the operation command based on the preset time parameter; The second execution unit is connected to the intensity parameter unit and the control module, and is configured to execute the operation command based on the preset intensity parameter.

7. The storage control structure according to any one of claims 1 to 6, characterized in that: The control module is further configured to identify the control instruction to generate a second control signal; The parameter module is further configured to receive the second control signal and output a target operating parameter matching the second control signal from among the plurality of preset operating parameters; The control module further includes: a selection module; The selection module includes a first input terminal, a second input terminal, a control terminal and an output terminal; The first input end, the second input end and the control end are connected to the control module, and the output end is connected to the parameter module; The control module is further configured to output a selection signal matching the configuration signal; The selection module is configured to provide the first control signal or the second control signal to the parameter module based on the selection signal.

8. The storage control structure according to claim 2, characterized in that: Also includes: A statistical module is connected to the control module and is configured to receive the operation command and count the operation command, and when the count value meets a preset condition, adjust the generated configuration signal.

9. A control and adjustment method, applied to the storage control structure according to any one of claims 1 to 8, characterized in that: include: configuring a plurality of preset operating parameters, and determining a corresponding relationship between the preset operating parameters and the first control signal; receiving a configuration signal, and outputting a first control signal matching the configuration signal based on the configuration signal; A target operating parameter matching the first control signal is outputted from among the plurality of preset operating parameters based on the first control signal.

10. A memory, characterized in that: include: The storage control structure according to any one of claims 1 to 8; A storage array is connected to the storage control structure to obtain target operation parameters provided by the storage control structure, wherein the target operation parameters are operation parameters corresponding to the operation command when the memory executes the operation command.

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