Substrate clamp fragment prevention device of ion beam etching equipment and use method of substrate clamp fragment prevention device

Abstract

The invention discloses a device for preventing a substrate clamp from being broken for ion beam etching equipment and a use method of the device. The device comprises a base, a rubber ring, a substrate bracket, the substrate clamp, a manipulator and an isolation film, an isolation film is attached to the upper surface of the base and makes contact with the rubber ring, and a pressing ring is arranged between the substrate clamp and the substrate support. A plurality of substrate support passing openings are formed in the periphery of the base, a plurality of openings are formed in the positions, corresponding to the passing openings, of the edge of the isolation film, and the isolation film is tightly attached and fixed to the side wall of the base through the matching of the openings and the substrate support passing openings. According to the clamp transformation device, the mode of adding the high-temperature-resistant isolation film is adopted, the rubber ring is fixed through the isolation film, meanwhile, contact between the rubber ring and the wafer is isolated, the wafer is prevented from being stuck and broken, the original structure of a machine does not need to be changed, the machine transformation cost is greatly reduced, and the maintenance frequency is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a device for preventing substrate clamps from being broken into pieces in an ion beam etching device and a method for using the device. Background Art

[0002] Ion beam etching equipment is a type of etching equipment widely used in the field of semiconductor manufacturing. Its working principle is to use a highly directional ion beam to bombard the wafer surface and etch away a thin film of target thickness. It is a physical etching.

[0003] However, currently most of such equipment uses a clamp that uses a flexible rubber ring to relieve the extrusion force of the wafer. Due to long-term high-temperature extrusion during etching, the rubber ring sticks to the back of the wafer and detaches from the slot, causing the wafer to be lifted and offset by the bracket. The robot reaches into the clamp to take the wafer and smashes the wafer. During actual operation, there is a fragmentation rate of about 3%, and the cavity needs to be opened to clean the fragments, and the rubber ring needs to be replaced frequently, which consumes a lot of time and manpower. Summary of the invention

[0004] Purpose of the invention: The present invention provides a device for preventing substrate fixtures from being fragmented in an ion beam etching device and a method for using the device to solve the problem of a high fragmentation rate in the ion beam etching device.

[0005] Technical solution: The present invention proposes a device for preventing substrate clamps from being fragmented in an ion beam etching device, comprising a base, a rubber ring located on the upper surface of the base, a substrate holder located above the base, and a substrate clamp located above the substrate holder; an insulating film is attached to the upper surface of the base, the insulating film is in contact with the rubber ring, and a pressure ring is provided between the substrate clamp and the substrate holder; a plurality of substrate holder through openings are provided on the periphery of the base, a plurality of openings are provided on the edge of the insulating film corresponding to the substrate holder through openings, the insulating film through openings and the substrate holder through openings cooperate to be tightly attached to the side wall of the base, and the substrate holder is raised and lowered in the substrate holder through openings.

[0006] Preferably, the base is provided with a plurality of helium outlets, the helium outlets are located at the center of the base and on the outer ring, and the helium outlets on the outer ring are located on the inner side of the rubber ring.

[0007] Preferably, the isolation membrane is provided with a plurality of gas outlets, the gas outlets are located on the outer ring and at the center of the isolation membrane, and the gas outlets overlap with the helium gas outlets.

[0008] Preferably, the diameter of the air outlet of the outer ring is 1-2 mm, and the diameter of the air outlet at the center is 5-7 mm.

[0009] Preferably, the number of the air outlet holes of the outer ring is 16 or 12.

[0010] Preferably, the insulating film has a diameter of 100 mm, 160 mm or 200 mm.

[0011] Preferably, the insulating film material is polytetrafluoroethylene, polyimide, polyetheretherketone, or polyphenylene sulfide.

[0012] Preferably, the substrate support has 4 or 6 passage openings.

[0013] A method for using a device for preventing substrate clamps from being broken in an ion beam etching device comprises the following steps: when the substrate clamp is in an unclamped state, a manipulator extends into the substrate clamp, descends to place a wafer on a substrate support and then retracts, a pressure ring falls to clamp the wafer, an isolation film is attached to the surface of a wafer base, the isolation wafer contacts a rubber ring on the surface of the base, the substrate clamp clamps the wafer and rotates to a set angle to start self-rotation to receive ion beam etching, during the process, helium cooling gas flows out from a helium outlet of the base to cool the wafer, and finally the process is completed, the substrate support holds the wafer and lifts it, the manipulator extends into the wafer, lifts it and then retracts it to take it away.

[0014] Preferably, the etching temperature in the step is 150°C.

[0015] Beneficial effect: The present invention provides an ion beam etching equipment substrate clamp fragmentation device and a method of using the same. By modifying the clamp device and adding a high-temperature resistant insulating film, the rubber ring is fixed by the insulating film without affecting the flexible rubber ring buffer clamp extrusion force and back helium circulation cooling. At the same time, the contact between the rubber ring and the wafer is isolated to prevent the wafer from being stuck with debris. The structure does not require changing the original structure of the machine, greatly reducing the cost of machine modification and reducing the frequency of maintenance from replacing the rubber ring every month to replacing the insulating film every year. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is an exploded assembly diagram of the high temperature resistant insulating film of the present invention;

[0017] Figure 2 A top view of the present invention when it is working;

[0018] Figure 3 This is a cross-sectional view of the present invention when it is working. DETAILED DESCRIPTION

[0019] As attached Figure 1The substrate clamp manufacturing device for solving the problem of fragments of ion beam etching equipment shown in the figure comprises an insulating film 1, which is coaxial with a wafer base 2 and is attached to the upper surface of the wafer base 2. The thickness of the insulating film 1 is less than 0.1 mm, and the inner diameter of the insulating film 1 is slightly larger than the size of the base 2. A rubber ring 7 is provided on the upper surface of the base 2, a substrate holder 5 is provided above the base 2, a substrate clamp 4 is provided above the substrate holder 5, and a manipulator 3 is provided between the rubber ring 7 and the substrate holder 5; the insulating film 1 is in contact with the rubber ring 7, and a pressure ring 6 is provided between the substrate clamp 4 and the substrate holder 5; a plurality of substrate holder through openings 10 are provided on the periphery of the base 2, and a plurality of openings 11 are provided on the edge of the insulating film 1 corresponding to the substrate holder through openings 10, and the insulating film 1 is tightly attached to the side wall of the base 2 through the openings 11 and the substrate holder through openings 10.

[0020] The base 2 is provided with a plurality of helium outlets 8, which are located at the center and outer ring of the base 2, and the helium outlet 8 on the outer ring is located inside the rubber ring 7. The isolation membrane 1 is provided with a plurality of outlets 10, which are located on the outer ring and at the center of the isolation membrane 1, and the outlets 10 overlap with the helium outlet 8. The diameter of the plurality of outlet holes 10 at the outer ring is 1-2 mm, and the diameter of the outlet 10 at the center is 5-7 mm. The isolation membrane 1 is made of polytetrafluoroethylene, polyimide, polyetheretherketone, and polyphenylene sulfide.

[0021] The method of using the present invention is that when the substrate clamp 4 is in an unclamped state, the robot 3 extends into the substrate clamp 4, descends to place the wafer on the substrate support 5 and retracts, the pressure ring 6 falls and clamps the wafer, the isolation film 1 is attached to the surface of the wafer base 2, the isolation wafer contacts the rubber ring 7 on the surface of the base 2, the substrate clamp 4 clamps the wafer and rotates to a set angle to start rotating to accept ion beam etching, during the process, helium cooling gas flows out from the back helium hole 8 of the base to cool the wafer, and finally the process is completed, the substrate support 5 holds the wafer and rises, the robot 3 extends in, lifts the wafer and retracts to take it away.

[0022] Example 1

[0023] In this embodiment, a 4-inch ion beam etching machine is used as an example. The present invention proposes that the isolation film is fixed on the upper surface of the wafer base 2, the thickness is less than 0.1 mm, the inner diameter is slightly larger than the size of the four-inch wafer, and the diameter of the isolation film 1 is 100 mm.

[0024] There are 12+1 gas outlets for cooling helium gas to pass through the outer ring and center of the isolation membrane 1, and 4 substrate support passages are provided at the edge of the base. The isolation membrane is provided with 4 openings here and is tightly attached to the side wall of the base 2.

[0025] Example 2

[0026] In this embodiment, a 6-inch ion beam etching machine is used as an example. The present invention proposes that an isolation film is fixed on the upper surface of the wafer base 2, with a thickness less than 0.1 mm and an inner diameter slightly larger than the size of a six-inch wafer. The diameter of the isolation film 1 is 160 mm.

[0027] There are 16+1 gas outlets for cooling helium gas to pass through the outer ring and center of the isolation membrane 1, and 6 substrate support passages are provided at the edge of the base. The isolation membrane is provided with 6 openings here and is tightly attached to the side wall of the base 2.

[0028] Example 3

[0029] In this embodiment, an 8-inch ion beam etching machine is used as an example. The present invention proposes that the isolation film is fixed on the upper surface of the wafer base 2, the thickness is less than 0.1 mm, the inner diameter is slightly larger than the size of the six-inch wafer, and the diameter of the isolation film 1 is 200 mm.

[0030] There are 12+1 gas outlets for cooling helium gas to pass through on the outer ring and center of the isolation membrane 1, and 6 substrate support passages are provided on the edge of the base. The isolation membrane is provided with 6 openings here and is tightly attached to the side wall of the base 2.

Claims

1. A device for preventing substrate fixture from being broken in an ion beam etching device, characterized in that: The invention comprises a base (2), a rubber ring (7) located on the upper surface of the base (2), a substrate support (5) located above the base (2), and a substrate clamp (4) located above the substrate support (5); an insulating film (1) is attached to the upper surface of the base (2), the insulating film (1) is in contact with the rubber ring (7), and a pressure ring (6) is provided between the substrate clamp (4) and the substrate support (5); a plurality of substrate support passage openings (10) are provided on the periphery of the base (2), a plurality of openings (11) are provided on the edge of the insulating film (1) corresponding to the substrate support passage openings (10), the insulating film (1) is tightly attached to the side wall of the base (2) through the openings (11) and the substrate support passage openings (10), and the substrate support (5) is raised and lowered in the substrate support passage openings (10).

2. The device for preventing substrate fixture from being broken in ion beam etching equipment according to claim 1, characterized in that: The base (2) is provided with a plurality of helium outlets (8), wherein the helium outlets (8) are located at the center of the base (2) and on the outer ring, and the helium outlets (8) on the outer ring are located on the inner side of the rubber ring (7).

3. The device for preventing substrate fixture from being broken in ion beam etching equipment according to claim 2, characterized in that: The isolation film (1) is provided with a plurality of gas outlets (9), the gas outlets (9) are located on the outer ring and at the center of the isolation film (1), and the gas outlets (9) overlap with the helium gas outlets (8).

4. The device for preventing substrate fixture from being broken in ion beam etching equipment according to claim 3, characterized in that: The diameter of the air outlet hole (9) of the outer ring is 1-2 mm, and the diameter of the air outlet (9) at the center is 5-7 mm.

5. The device for preventing substrate fixture from being broken in ion beam etching equipment according to claim 4, characterized in that: The number of the air outlet holes (9) of the outer ring is 16 or 12.

6. The device for preventing substrate fixture from being broken in ion beam etching equipment according to claim 1, characterized in that: The diameter of the insulating film (1) is 100 mm, 160 mm or 200 mm.

7. The device for preventing substrate fixture from being broken in ion beam etching equipment according to claim 1, characterized in that: The insulating film (1) is made of polytetrafluoroethylene, polyimide, polyetheretherketone, or polyphenylene sulfide.

8. The device for preventing substrate fixture from being broken in ion beam etching equipment according to claim 1, characterized in that: The number of the substrate support passage openings (10) is 4 or 6.

9. A method for using the device for preventing substrate fixture fragmentation in ion beam etching equipment according to any one of claims 1 to 8, characterized in that: The invention comprises the following steps: when the substrate clamp (4) is in an unclamped state, the manipulator (3) extends into the substrate clamp (4), descends to place the wafer on the substrate support (5) and then retracts, the pressure ring (6) falls down to clamp the wafer, the isolation film (1) is attached to the surface of the wafer base (2), the isolation wafer contacts the rubber ring (7) on the surface of the base (2), the substrate clamp (4) clamps the wafer and rotates to a set angle to start self-rotation to receive ion beam etching, during the process, helium cooling gas flows out from the helium outlet (8) of the base to cool the wafer, and finally the process is completed, the substrate support (5) holds the wafer and rises, the manipulator (3) extends into the wafer, lifts the wafer and then retracts to take it away.

10. The method for using the device for preventing substrate fixture fragmentation in ion beam etching equipment according to claim 9, characterized in that: The etching temperature in the step is 150°C.

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