Patterned preparation method of intermetallic compound

Abstract

The invention provides a graphical preparation method of an intermetallic compound, which comprises the following steps: determining a graphical shape, and manufacturing a mask plate based on the graphical shape; at least two pieces of micro-nano metal powder are mixed, and micro-nano mixed metal powder is obtained; performing deposition operation on the micro-nano mixed metal powder based on a mask plate to generate a micro-nano mixed metal powder patterned prefabricated layer; and sintering the micro-nano mixed metal powder patterned prefabricated layer to obtain the intermetallic compound. The invention has the advantages of wide application range, low cost, high temperature resistance and suitability for high-temperature working environment, and can be used for sealing various chips and manufacturing micro-channels.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor device packaging, and in particular to a method for graphically preparing an intermetallic compound. Background Art

[0002] This section is intended to provide a background or context to the embodiments of the disclosure that are recited in the claims. No description herein is admitted to be prior art by inclusion in this section.

[0003] Intermetallic compounds are a welding material suitable for high-temperature environments. During the manufacturing process, metal solder reacts with the substrate to form a thick intermetallic compound layer through the mutual diffusion of atoms. This process not only ensures the electrical conductivity of the connected part, but also provides good thermal conductivity and stable mechanical strength.

[0004] However, in the related art, intermetallic compounds are difficult to pattern due to their high hardness, brittleness and difficulty in processing. Summary of the invention

[0005] In view of this, the purpose of the present disclosure is to provide a method for graphically preparing an intermetallic compound, which at least solves one of the technical problems in the related art to a certain extent.

[0006] Based on the above purpose, the exemplary embodiment of the present disclosure provides a method for preparing a metal compound by patterning, the method comprising:

[0007] Determining a graphical shape, and making a mask based on the graphical shape;

[0008] Mixing at least two micro-nano metal powders to obtain micro-nano mixed metal powder;

[0009] Depositing the micro-nano hybrid metal powder based on the mask plate to generate a micro-nano hybrid metal powder graphic prefabricated layer;

[0010] The micro-nano mixed metal powder patterned prefabricated layer is sintered to obtain an intermetallic compound.

[0011] From the above, it can be seen that the embodiments of the present disclosure provide: determining a graphical shape, making a mask plate based on the graphical shape; mixing at least two micro-nano metal powders to obtain a micro-nano mixed metal powder; depositing the micro-nano mixed metal powder based on the mask plate to generate a micro-nano mixed metal powder graphical prefabricated layer; sintering the micro-nano mixed metal powder graphical prefabricated layer to obtain an intermetallic compound. The present disclosure has a wide range of applications and can be used for various chip sealing and microchannel production, and is low in cost, high temperature resistant, and suitable for high temperature working environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0013] Figure 1 A schematic flow chart of a method for graphically preparing an intermetallic compound provided by an exemplary embodiment of the present disclosure;

[0014] Figure 2 A schematic diagram of a comb-shaped pattern of an intermetallic compound in a method for graphically preparing an intermetallic compound provided by an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0015] It is understandable that before using the technical solutions disclosed in the embodiments of this application, the type, scope of use, usage scenarios, etc. of the personal information involved in this application should be informed to the user and the user's authorization should be obtained in an appropriate manner in accordance with relevant laws and regulations.

[0016] For example, in response to receiving an active request from a user, a prompt message is sent to the user to clearly prompt the user that the operation requested to be performed will require obtaining and using the user's personal information. Thus, the user can autonomously choose whether to provide personal information to software or hardware such as an electronic device, application, server, or storage medium that performs the operation of the technical solution of the present application according to the prompt message.

[0017] As an optional but non-limiting implementation, in response to receiving an active request from the user, the prompt information may be sent to the user in the form of a pop-up window, in which the prompt information may be presented in text form. In addition, the pop-up window may also carry a selection control for the user to choose "agree" or "disagree" to provide personal information to the electronic device.

[0018] It is understandable that the above notification and the process of obtaining user authorization are merely illustrative and do not constitute a limitation on the implementation method of the present application. Other methods that meet the relevant laws and regulations may also be applied to the implementation method of the present application.

[0019] It is understandable that the data involved in this technical solution (including but not limited to the data itself, the acquisition or use of the data) shall comply with the requirements of relevant laws, regulations and relevant provisions.

[0020] In order to make the purpose, technical solutions and advantages of the present disclosure more clear, the principles and spirit of the present disclosure will be described with reference to several exemplary embodiments. It should be understood that these embodiments are provided only to enable those skilled in the art to better understand and implement the present disclosure, and are not intended to limit the scope of the present disclosure in any way. On the contrary, these embodiments are provided to make the present disclosure more thorough and complete, and to fully convey the scope of the present disclosure to those skilled in the art.

[0021] It should be understood herein that any number of elements in the drawings is for illustration rather than limitation, and any naming is only for distinction rather than having any limiting meaning.

[0022] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the embodiments of the present disclosure do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connecting" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly. The article "one" or "a" before an element does not exclude the existence of multiple such elements.

[0023] The principle and spirit of the present disclosure are explained in detail below with reference to several representative embodiments of the present disclosure.

[0024] As described in the background technology, in the related art, intermetallic compounds are difficult to carry out graphic processes due to their high hardness, brittleness and difficult processing characteristics. Specifically, electronic components play a core role in electronic circuit design and electronic product manufacturing, and their application range is very wide. With the development of advanced packaging technology, such as multi-chip modules (MCM), chip stacking and 3D packaging, the requirements for packaging reliability have also increased. Especially in the interconnection process, its reliability is crucial to the performance of components. For example, in the microchannel process of MCM devices, it is necessary to achieve the dual requirements of electrical connection and microchannel between chips or between chips and transition plates, while ensuring sufficient mechanical strength.

[0025] For power devices, especially the third-generation wide bandgap semiconductor chips represented by silicon carbide (SiC) and gallium nitride (GaN), they have been rapidly applied in the field of power electronics due to their excellent chemical stability, high breakdown voltage, high electron mobility and low dielectric constant. However, these high-power chips generate huge heat in actual applications, causing traditional connection materials such as tin-lead alloys to fail at high temperatures. The main reason is that these solders have a low melting point and cannot meet the application requirements of high power density and high reliability, making the welding process a bottleneck for the application of these devices.

[0026] With the development of the electronic components industry, chips are moving towards miniaturization and high power, and the package interconnection pitch is shrinking, even down to 10 microns or less. This leads to an increase in heat density within the component package and an increase in the service temperature of the solder joints, making the connection reliability issue more prominent.

[0027] In the face of these challenges, advanced packaging technology needs to solve two major chip interconnection problems. First, in order to meet the needs of microchannels and narrow seals, micron-scale graphic process capabilities are required. Secondly, for the reliability requirements of high-power components in high-temperature applications, intermetallic compounds, as a material for low-temperature welding and high-temperature applications, need to form a thicker intermetallic compound layer through atomic diffusion to achieve electrical conductivity, thermal conductivity and mechanical stability. However, due to the high hardness, high brittleness and difficulty in processing of such materials, the implementation of the graphic process becomes complicated.

[0028] In order to solve the above problems, the present disclosure provides a graphical preparation scheme for intermetallic compounds, which specifically includes:

[0029] Determine a graphic shape, and make a mask plate based on the graphic shape; mix at least two micro-nano metal powders to obtain a micro-nano mixed metal powder; deposit the micro-nano mixed metal powder based on the mask plate to generate a micro-nano mixed metal powder graphic prefabricated layer; sinter the micro-nano mixed metal powder graphic prefabricated layer to obtain an intermetallic compound. The present invention successfully overcomes the difficulties of high material hardness, high brittleness, and difficulty in processing, realizes the preparation of high aspect ratio graphics, meets the requirements of advanced packaging technology for silicon wafer sealing, microchannel design, etc., provides a reliable solution for high-temperature service component packaging, and has the advantages of strong universality and mass production.

[0030] After introducing the basic principles of the present disclosure, various non-limiting embodiments of the present disclosure are described in detail below.

[0031] refer to Figure 1 , which is a schematic flow chart of a graphical preparation method of an intermetallic compound provided by an exemplary embodiment of the present disclosure.

[0032] Step S101: determine a graphical shape, and make a mask plate based on the graphical shape.

[0033] In specific implementation, the graphical shape includes but is not limited to at least one of the following:

[0034] Line graphics can be used to form conductive paths for circuits, grid graphics can be used to provide structural strength or serve as a heat dissipation network, comb-shaped graphics can be used to enhance connection strength and heat conduction, dot graphics can be used to form solder joints or connection points, ring and circular graphics can be used to form inductors, capacitors or other circular structures, rectangular graphics can be used to form resistors, capacitors and other components that require boundaries or customized complex graphics, and can be used for specific sensor layouts and integrated circuit patterns.

[0035] In the above exemplary embodiment, a graphical shape is introduced. Next, a method for making a mask based on the graphical shape is introduced:

[0036] In this exemplary embodiment, based on the graphical shape, a mask is manufactured, including:

[0037] The graphic size of the patterned shape is determined, and the mask is prepared based on 75% to 85% of the graphic size to obtain the graphic size of the mask.

[0038] In a specific implementation, it refers to determining the graphic size of the graphic shape, preparing the mask plate based on 75% to 85% of the graphic size, and obtaining the graphic size of the mask plate refers to:

[0039] Based on specific application requirements, the required graphic style is designed and manufactured on the mask. During the manufacturing process, the line width or diameter of the graphic will be processed to 75% to 85% of the original design size W. Micromachining technology may have a certain tolerance in actual operation. This ratio range can ensure that the final product can remain within acceptable performance standards even if there are small deviations during the processing process. Providing a certain ratio range can increase the flexibility of the design and allow adjustments under different application scenarios or different performance requirements.

[0040] As a specific example, refer to Figure 2 The experimenters designed a comb-like structure pattern for manufacturing intermetallic compounds, and the width of this serrated pattern is 7 cm and the length is 8 cm. According to the requirements, the width of the processing pattern line is 75% to 85% of the design value, so the width of the pattern on the mask plate is 5.25 cm to 5.95 cm and the length is 6 cm to 6.8 cm.

[0041] In the above exemplary embodiment, a method for making a mask plate based on the graphical shape is introduced. Next, a method for obtaining the thickness size of the mask plate is introduced:

[0042] In this exemplary embodiment, a preset thickness dimension of the mask plate is determined, and the mask plate is prepared based on 100% to 110% of the preset thickness dimension to obtain the thickness dimension of the mask plate.

[0043] In a specific implementation, the mask is prepared based on 100% to 110% of the preset thickness dimension, and the thickness dimension of the mask is obtained to ensure that the mask has sufficient mechanical strength and durability, while allowing a certain tolerance range. This extra thickness can compensate for minor deviations during the processing process, ensuring that the mask will not be easily damaged during multiple uses and cleaning, thereby maintaining the accuracy and consistency of the pattern. In addition, a slightly thicker mask helps to improve its alignment accuracy during deposition and etching, and reduce pattern transfer errors caused by deformation or wear of the mask.

[0044] As a specific embodiment, the preset thickness of the mask plate is 100 microns. If the thickness of the processed mask plate is 100% to 110% of the design requirement value D, then the thickness of the mask plate is 100 microns to 110 microns.

[0045] In the above exemplary embodiment, a method for obtaining the thickness of the mask plate is introduced. Next, the material of the mask plate is introduced:

[0046] In this exemplary embodiment, the material of the mask plate includes: metal, quartz or glass.

[0047] In specific implementation, the materials of the mask include: metal, quartz or glass, because these materials each have unique physical and chemical properties. Metal materials can provide good light transmittance and conductivity, and are suitable for electron beam exposure that requires high-precision pattern transfer; quartz and glass materials are suitable for processes such as optical exposure and plasma etching due to their high transparency, good chemical stability and high temperature resistance, ensuring that the mask will not deform or chemically react during the processing, thereby maintaining the accuracy and stability of the pattern. In addition, metal, quartz or glass are all high-temperature resistant, non-deformable and reusable materials.

[0048] Step S120: Mix at least two micro-nano metal powders to obtain micro-nano mixed metal powder.

[0049] In this exemplary embodiment, at least two micro-nano metal powders include:

[0050] Micro-nano copper powder with a particle size ranging from 0.02 microns to 2 microns and micro-nano tin powder with a particle size ranging from 0.02 microns to 2 microns.

[0051] In specific implementation, the micro-nano copper powder with a particle size range of 0.02 microns to 2 microns and the micro-nano tin powder with a particle size range of 0.02 microns to 2 microns are because the powder particles in this particle size range are small enough to achieve high-resolution graphic deposition, and the particle size is moderate, which is conducive to promoting the full diffusion and reaction of copper and tin atoms during the sintering process to form a uniform intermetallic compound. In addition, the powder of this particle size has good fluidity, which is convenient for precise graphic deposition through the mask plate without clogging the fine pattern of the mask plate; at the same time, it is conducive to achieving the required electrical conductivity, thermal conductivity and mechanical strength to meet the strict requirements for material properties in high-performance electronic packaging and interconnection applications.

[0052] In the above exemplary embodiment, at least two micro-nano metal powders are introduced. The following is a method for obtaining a micro-nano mixed metal powder:

[0053] In this exemplary embodiment, the step of mixing at least two micro-nano metal powders to obtain micro-nano mixed metal powder includes:

[0054] The micro-nano copper powder and the micro-nano tin powder are mixed in a ratio of 1.5 to 2:2.5 to 3 to obtain the micro-nano mixed metal powder.

[0055] In a specific implementation, the micro-nano copper powder and the micro-nano tin powder are mixed in a ratio of 1.5 to 2: 2.5 to 3 to ensure that in the subsequent sintering process, copper and tin can fully react according to a predetermined stoichiometric ratio to form the desired intermetallic compound. This specific ratio helps to optimize the structure and properties of the intermetallic compound and prevent defects or performance degradation due to composition deviations. At the same time, this ratio also takes into account the differences in volatility and reactivity of the two metals during the sintering process, thereby ensuring the quality and consistency of the final product.

[0056] As a specific embodiment, 1.75 grams of micro-nano copper powder with a particle size ranging from 0.02 microns to 2 microns and 2.75 grams of micro-nano tin powder with a particle size ranging from 0.02 microns to 2 microns are mixed to obtain micro-nano copper-tin mixed metal powder.

[0057] Step S130 : performing a deposition operation on the micro-nano hybrid metal powder based on the mask plate to generate a micro-nano hybrid metal powder patterned prefabricated layer.

[0058] In a specific implementation, the method of depositing the micro-nano mixed metal powder based on the mask plate includes but is not limited to at least one of the following:

[0059] Based on the mask plate, physical vapor deposition (PVD) operation is performed on the micro-nano mixed metal powder, based on the mask plate, chemical vapor deposition (CVD) operation is performed on the micro-nano mixed metal powder, based on the mask plate, pulsed laser deposition (PLD) operation is performed on the micro-nano mixed metal powder, or based on the mask plate, atomic layer deposition (ALD) operation is performed on the micro-nano mixed metal powder.

[0060] In this exemplary embodiment, a deposition operation is performed on the micro-nano hybrid metal powder based on the mask plate to generate a micro-nano hybrid metal powder patterned prefabricated layer, including:

[0061] The mixed metal powder is placed between the mask plate and the metal carrier, and a pulsed laser deposition operation is performed on the micro-nano mixed metal powder to generate a micro-nano mixed metal powder graphic prefabricated layer.

[0062] Placing the mixed metal powder between the mask plate and the metal carrier, and performing a pulsed laser deposition operation on the micro-nano mixed metal powder to generate a micro-nano mixed metal powder graphic prefabricated layer refers to:

[0063] The micro-nano copper-tin mixed metal powder is evenly placed between the pre-prepared mask plate and the metal carrier, and then a pulsed laser deposition system is used to precisely control the laser parameters (such as power, frequency and pulse width) to allow the high-energy laser beam to irradiate the target material, causing the metal powder to evaporate or sputter to form plasma. These plasma particles are then transmitted in a vacuum or controlled atmosphere and pass through the light-transmitting pattern area on the mask plate to be precisely deposited on the corresponding position of the metal carrier below, forming a micro-nano mixed metal powder patterned prefabricated layer that matches the mask plate pattern.

[0064] In the above exemplary embodiments, a method for generating a micro-nano hybrid metal powder graphic prefabricated layer is introduced. Below, the metal carrier is further introduced:

[0065] In this exemplary embodiment, the metal carrier includes: a copper substrate, a copper-clad substrate or a chip metallization coating.

[0066] In specific implementation, the copper substrate refers to: a substrate with copper as the main material.

[0067] In specific implementation, copper-clad substrate refers to: a composite material in which the surface of an insulating substrate is covered with a layer of copper foil, and the copper foil is firmly adhered to the substrate by heat pressing or other methods.

[0068] In specific implementation, the chip metallization coating refers to: a layer of metal film coated on the surface of the semiconductor chip, and this metal film is usually composed of conductive materials such as aluminum, copper or precious metals.

[0069] In specific implementation, the metal carrier includes: a copper substrate, a copper-clad substrate or a chip metallization coating; this is because these carrier materials have good electrical conductivity and thermal conductivity, and can provide stable physical support and electrical connection for the micro-nano hybrid metal powder graphic prefabricated layer. At the same time, the high thermal conductivity of copper helps to dissipate heat, and the metallization coating ensures a reliable connection with the chip or other electronic components. These characteristics make them very suitable as metal carriers in electronic packaging and interconnection applications to achieve high-performance electronic device manufacturing.

[0070] Step S140: sintering the micro-nano mixed metal powder patterned prefabricated layer to obtain an intermetallic compound.

[0071] In a specific implementation, sintering the micro-nano mixed metal powder patterned prefabricated layer means:

[0072] Sintering the micro-nano mixed metal powder patterned prefabricated layer refers to the process of heating the prefabricated layer under a specific temperature and atmosphere to cause physical and chemical changes to occur, thereby making the powder particles more tightly bonded to form a dense intermetallic compound layer with certain mechanical strength and electrical properties.

[0073] In this exemplary embodiment, the micro-nano hybrid metal powder patterned prefabricated layer is sintered to obtain an intermetallic compound, including:

[0074] The micro-nano mixed metal powder patterned prefabricated layer is sintered at 230 to 240 degrees Celsius and a pressure of 8 to 12 MPa for 30 to 35 minutes to obtain the intermetallic compound.

[0075] In specific implementation, the micro-nano hybrid metal powder graphic prefabricated layer is sintered at 230 to 240 degrees Celsius and a pressure of 8 to 12 MPa for 30 to 35 minutes to obtain the intermetallic compound, in order to ensure that the micro-nano hybrid metal powder can fully react to form the intermetallic compound while maintaining the integrity of the prefabricated layer structure. The temperature range of 230 to 240 degrees Celsius can provide sufficient energy to promote the diffusion and combination of copper and tin atoms; and the pressure of 8 to 12 MPa is conducive to the close contact between the powder particles and promotes the reaction. The time is set at 30 to 35 minutes to ensure that the reaction is fully completed without over-sintering to avoid the formation of undesirable phases or structural defects.

[0076] In the above exemplary embodiment, it is introduced that the micro-nano hybrid metal powder patterned prefabricated layer is sintered at 230 to 240 degrees Celsius and a pressure of 8 to 12 MPa for 30 to 35 minutes to obtain the intermetallic compound. Below, it is further introduced that the micro-nano hybrid metal powder patterned prefabricated layer is placed in an inert gas for sintering to obtain the intermetallic compound.

[0077] In specific implementation, the inert gas refers to:

[0078] Inert gases, also known as rare gases or noble gases, refer to the 18th group of elements in the periodic table, including helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) and radon (Rn). These gases exist in the form of monatomic molecules in nature.

[0079] In a specific implementation, the micro-nano mixed metal powder graphic prefabricated layer is placed in an inert gas for sintering to obtain the intermetallic compound in order to protect the powder from oxidation while achieving close bonding between the powder particles through high-temperature sintering to form an intermetallic compound with specific structure and properties, thereby improving the mechanical properties, electrical properties or other functional requirements of the material.

[0080] It should be noted that the method of the embodiment of the present disclosure can be performed by a single device, such as a computer or a server. The method of the present embodiment can also be applied in a distributed scenario and completed by multiple devices cooperating with each other. In the case of such a distributed scenario, one of the multiple devices can only perform one or more steps in the method of the embodiment of the present disclosure, and the multiple devices will interact with each other to complete the described method.

[0081] It should be noted that the above describes some embodiments of the present disclosure. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0082] In addition, although the operations of the disclosed method are described in a particular order in the accompanying drawings, this does not require or imply that the operations must be performed in this particular order, or that all the operations shown must be performed to achieve the desired results. On the contrary, the steps depicted in the flow chart can be performed in a different order. Additionally or alternatively, some steps can be omitted, multiple steps can be combined into one step, and / or one step can be decomposed into multiple steps.

[0083] The flowchart and block diagram in the accompanying drawings illustrate the possible architecture, functions and operations of the system, method and computer program product according to various embodiments of the present application. Wherein, each box in the flowchart or block diagram can represent a module, a program segment, or a part of the code, and the above-mentioned module, program segment, or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0084] It should be noted that, although several modules or units of the equipment for action execution are mentioned in the above detailed description, this division is not mandatory. In fact, according to the embodiments of the present application, the features and functions of two or more modules or units described above can be embodied in one module or unit. On the contrary, the features and functions of one module or unit described above can be further divided into being embodied by multiple modules or units.

[0085] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0086] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present application difficult to understand, the known power supply / ground connection with the integrated circuit (IC) chip and other components may or may not be shown in the provided drawings. In addition, the device can be shown in the form of a block diagram to avoid making the embodiments of the present application difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform to be implemented in the embodiments of the present application (that is, these details should be fully within the scope of understanding of those skilled in the art). In the case of elaborating specific details (e.g., circuits) to describe exemplary embodiments of the present application, it is obvious to those skilled in the art that the embodiments of the present application can be implemented without these specific details or when these specific details are changed. Therefore, these descriptions should be considered to be illustrative rather than restrictive.

[0087] Although the present application has been described in conjunction with specific embodiments of the present application, many replacements, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.

[0088] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

[0089] Although the spirit and principle of the present disclosure have been described with reference to several specific embodiments, it should be understood that the present disclosure is not limited to the disclosed specific embodiments, and the division of various aspects does not mean that the features in these aspects cannot be combined to benefit, and such division is only for the convenience of expression. The present disclosure is intended to cover various modifications and equivalent arrangements included in the spirit and scope of the attached claims. The scope of the attached claims conforms to the broadest interpretation, thereby including all such modifications and equivalent structures and functions.

Claims

1. A method for preparing a metallic compound by patterning, characterized in that: include: Determining a graphical shape, and making a mask based on the graphical shape; Mixing at least two micro-nano metal powders to obtain micro-nano mixed metal powder; Depositing the micro-nano hybrid metal powder based on the mask plate to generate a micro-nano hybrid metal powder graphic prefabricated layer; The micro-nano mixed metal powder patterned prefabricated layer is sintered to obtain an intermetallic compound.

2. The method according to claim 1, characterized in that The method manufactures a mask plate based on the graphic shape, comprising: The graphic size of the patterned shape is determined, and the mask is prepared based on 75% to 85% of the graphic size to obtain the graphic size of the mask.

3. The method according to claim 2, characterized in that The method further comprises: The preset thickness dimension of the mask plate is determined, and the mask plate is prepared based on 100% to 110% of the preset thickness dimension to obtain the thickness dimension of the mask plate.

4. The method according to claim 3, characterized in that The material of the mask plate includes: metal, quartz or glass.

5. The method according to claim 1, characterized in that The at least two micro-nano metal powders include: Micro-nano copper powder with a particle size ranging from 0.02 microns to 2 microns and micro-nano tin powder with a particle size ranging from 0.02 microns to 2 microns.

6. The method according to claim 5, characterized in that The step of mixing at least two micro-nano metal powders to obtain micro-nano mixed metal powder comprises: The micro-nano copper powder and the micro-nano tin powder are mixed in a ratio of 1.5 to 2:2.5 to 3 to obtain the micro-nano mixed metal powder.

7. The method according to claim 6, characterized in that The depositing operation on the micro-nano hybrid metal powder based on the mask plate to generate a micro-nano hybrid metal powder graphic prefabricated layer includes: The mixed metal powder is placed between the mask plate and the metal carrier, and a pulsed laser deposition operation is performed on the micro-nano mixed metal powder to generate a micro-nano mixed metal powder graphic prefabricated layer.

8. The method according to claim 7, characterized in that The metal carrier includes: a copper substrate, a copper-clad substrate or a chip metallization coating; The method of placing the mixed metal powder between the mask plate and the metal carrier and performing a pulsed laser deposition operation on the micro-nano mixed metal powder to generate a micro-nano mixed metal powder graphic prefabricated layer comprises: Placing the mixed metal powder between the mask plate and the copper substrate, and performing a pulsed laser deposition operation on the micro-nano mixed metal powder to generate a patterned prefabricated layer of the micro-nano mixed metal powder; Or, placing the mixed metal powder between the mask plate and the copper-clad substrate, and performing a pulsed laser deposition operation on the micro-nano mixed metal powder to generate a patterned prefabricated layer of the micro-nano mixed metal powder; Alternatively, the mixed metal powder is placed between the mask plate and the chip metallization coating, and a pulsed laser deposition operation is performed on the micro-nano mixed metal powder to generate the micro-nano mixed metal powder graphic prefabricated layer.

9. The method according to claim 1, characterized in that: The micro-nano mixed metal powder patterned prefabricated layer is sintered to obtain an intermetallic compound, comprising: The micro-nano mixed metal powder patterned prefabricated layer is sintered at 230 to 240 degrees Celsius and a pressure of 8 to 12 MPa for 30 to 35 minutes to obtain the intermetallic compound.

10. The method according to claim 9, characterized in that The method further comprises: The micro-nano mixed metal powder patterned prefabricated layer is placed in an inert gas for sintering to obtain the intermetallic compound.

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