Cascode device packaging structure and preparation method thereof
By adopting the cascode device packaging structure and its preparation method during the packaging process of Cascode devices, the switching elements and compound semiconductor devices are packaged and connected in one-time with plastic packaging materials and circuit interconnection layers, the problems of long packaging cycle and low efficiency in the prior art are solved, and a more efficient packaging process is achieved.
Patent Information
- Application Number
- CN202411945109.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2025-03-28
AI Technical Summary
During the packaging process of existing Cascode devices, the packaging cycle is long and the efficiency is low. Especially when cascade GaN HEMT and Si MOSFET and implement integrated packaging, multiple chips and plastic packaging lead to inefficiency.
It provides a casuba device packaging structure and a preparation method thereof, including setting a bonding film on the carrier plate, setting a switching element and a compound semiconductor device, packaging a plastic packaging material to form a package, and forming a circuit interconnection layer on the package to connect the switching element and a compound semiconductor device, and finally placing the connector in the frame to connect the circuit interconnection layer and the wiring points on the frame.
Through one plastic seal, the switching elements and compound semiconductor devices can be connected into an integrated structure, reducing the number of times of sheeting and plastic sealing, shortening the packaging cycle, and improving packaging efficiency.
Smart Images
Figure CN119725101A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor device packaging, and in particular to a common-source and common-gate device packaging structure and a preparation method thereof. Background Art
[0002] A cascode device is an amplifier circuit structure composed of two cascaded transistors. Amplifiers with this structure can provide high gain and low output impedance. Since the upper tube provides a higher output resistance, the output resistance of the lower tube can be reduced, thereby improving the performance and stability of the amplifier.
[0003] Cascode devices include HEMT chips and MOS chips. By cascading a depletion-mode high-voltage GaN HEMT and a low-voltage enhancement-mode Si MOSFET and realizing an integrated package, the on-off of the GaN HEMT depends on the on-off of the Si MOSFET. Specifically, when packaging the Cascode power device, the GaN HEMT, the low-voltage enhancement-mode Si MOSFET and the substrate are sequentially installed and packaged in a frame, that is, during the packaging process, multiple chip installation and plastic sealing are required, which makes the packaging cycle longer and the efficiency lower. Summary of the invention
[0004] The purpose of the present application is to provide a common source and common gate packaging structure and a preparation method thereof, which can improve the packaging efficiency of the common source and common gate device packaging structure.
[0005] On the one hand, an embodiment of the present application provides a method for preparing a common-source and common-gate device packaging structure, including: providing a carrier and setting a bonding film on the carrier; setting a switching element and a compound semiconductor device on the bonding film; using a plastic packaging material to encapsulate the switching element and the compound semiconductor device to form a package; forming a circuit interconnection layer on the package, the circuit interconnection layer connecting the switching element and the compound semiconductor device; removing the carrier and the bonding film to form a connector; placing the connector in a frame, and connecting the circuit interconnection layer and the wiring points on the frame to form a common-source and common-gate device.
[0006] As an implementable method, a circuit interconnection layer is formed on the package, and the circuit interconnection layer connects the switching element and the compound semiconductor device, including: drilling holes in the plastic packaging material corresponding to the electrodes of the switching element and the compound semiconductor device to form connection holes; forming a metal layer on the package, the metal layer fills the connection holes to form connection columns, and the connection columns are respectively connected to the electrodes of the switching element and the compound semiconductor device; patterning the metal layer to form a circuit interconnection layer, and the circuit interconnection layer is connected to the connection columns to connect the switching element and the compound semiconductor device through the connection columns.
[0007] As an practicable manner, after removing the carrier and the bonding film to form a connector, the preparation method further includes: drilling a connecting hole in the plastic packaging material from the back side of the connector so that the connecting hole contacts the circuit interconnection layer; forming a lead-out layer on the back side of the connector, the lead-out layer fills the connecting hole to form a column, and the column is connected to the circuit interconnection layer to guide the electrode of the compound semiconductor device to the lead-out layer through the column and the circuit interconnection layer.
[0008] As an implementable method, when the connector is placed in the frame and the circuit interconnection layer and the wiring points on the frame are connected to form a common source and common gate device, the lead-out layer is patch-connected to the electrode surface of the frame.
[0009] As an practicable manner, before using a plastic packaging material to package the switch element and the compound semiconductor device to form a package, the preparation method further includes: arranging a passive device on the bonding film, wherein the passive device is spaced apart from the switch element and the compound semiconductor device.
[0010] As an implementable manner, the switch element is a driver chip, a MOS tube, or a component in which the two are connected in series.
[0011] As an implementable manner, before setting the switching element and the compound semiconductor device on the bonding film, the preparation method also includes: setting connecting pieces at intervals on the bonding film, and the connecting pieces are used to respectively set the switching element and the compound semiconductor device, wherein the connecting pieces are connected to the switching element and extend out of the switching element to form an extension portion in a direction perpendicular to the layer direction.
[0012] As an practicable manner, before using a plastic packaging material to package the switch element and the compound semiconductor device to form a package, the preparation method further includes: arranging a connector on the protruding portion.
[0013] As an implementable method, a circuit interconnection layer is formed on the package, and the circuit interconnection layer connects the switching element and the compound semiconductor device, including: when the switching element is a driver chip and a MOS tube connected in series, the control end of the driver chip and the gate of the MOS tube are connected through the circuit interconnection layer, and the chip select end of the driver chip is led out through the circuit interconnection layer.
[0014] On the other hand, an embodiment of the present application provides a common-source and common-gate device packaging structure, including a common-source and common-gate device packaging structure prepared by the above-mentioned preparation method, including a frame and a connector arranged on the frame, the connector including a packaging body and a circuit connection layer arranged on the surface of the packaging body, the packaging body encapsulates a switching element and a compound semiconductor device, and the switching element and the compound semiconductor device are connected through the circuit connection layer.
[0015] The beneficial effects of the embodiments of the present application include:
[0016] The preparation method of the compositive gate device packaging structure provided in the present application includes: providing a carrier and setting a bonding film on the carrier; setting a switch element and a compound semiconductor device on the bonding film; using a plastic encapsulation material to encapsulate the switch element and the compound semiconductor device to form a package; the switch element and the compound semiconductor device can be connected into an integrated structure by one plastic encapsulation. A circuit interconnection layer is formed on the package, and the circuit interconnection layer connects the switch element and the compound semiconductor device, so that the switch element and the compound semiconductor device are connected through the circuit interconnection layer to form a compositive gate device; removing the carrier and the bonding film to form a connector; placing the connector in a frame, and connecting the circuit interconnection layer and the wiring points on the frame to form a compositive gate device. In the preparation method of the compositive gate device packaging structure provided in the present application, only one packaging is required to connect the switch element and the compound semiconductor device to the frame to form a compositive gate device, which reduces the number of chip loading and plastic encapsulation, shortens the packaging cycle, and improves the packaging efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0018] Figure 1 A flow chart of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0019] Figure 2 One of the state diagrams of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0020] Figure 3 A second state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0021] Figure 4 A third state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0022] Figure 5 A fourth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0023] Figure 6 A fifth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0024] Figure 7 A sixth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0025] Figure 8 A seventh state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0026] Fig. 9 An eighth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0027] Fig.10 A ninth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0028] Fig.11 A tenth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0029] Fig.12 The eleventh state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0030] Fig.13 A twelve-step state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0031] Fig.14 The thirteenth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0032] Fig.15 A fourteenth state diagram of a method for preparing a common-source and common-gate device packaging structure provided in an embodiment of the present application;
[0033] Fig.16 A circuit diagram of a common-source and common-gate device packaging structure provided in an embodiment of the present application.
[0034] Icons: 110-carrier; 120-bonding film; 131-switching element; 132-HEMT device; 133-MOS tube; 134-driving chip; 140-plastic packaging material; 150-circuit interconnection layer; 160-connector; 170-frame; 181-connecting column; 182-column; 190-passive device; 191-connecting sheet; 192-connector; 193-lead-out layer. DETAILED DESCRIPTION
[0035] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0036] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.
[0037] In the description of this application, it should be noted that the terms "center", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0038] The cascode device is a device formed by connecting a compound semiconductor device and a MOS chip in a cascode manner. The connection of the two components improves the performance and stability of the cascode device. In the prior art, when the compound semiconductor device and the MOS chip are connected and packaged, the packaging cycle is long and the efficiency is low.
[0039] The present application provides a method for preparing a common source and common gate device packaging structure, such as Figure 1 As shown, including:
[0040] S10: Figure 2 As shown, a carrier 110 is provided and a bonding film 120 is disposed on the carrier 110;
[0041] Among them, the carrier 110 serves as a temporary substrate to provide support for the subsequent packaging of the switching element 131 and the compound semiconductor device, and the bonding film 120 serves as an element to fix the switching element 131 and the compound semiconductor device to the carrier 110. Specifically, the specific materials of the carrier 110 and the bonding film 120 are not limited in the embodiments of the present application, as long as the carrier 110 has a certain strength and can be used in plastic packaging, and the bonding film 120 can fix the switching element 131 and the compound semiconductor device.
[0042] S20: Figure 2 As shown, a switch element 131 and a compound semiconductor device are arranged on the bonding film 120;
[0043] The switch element 131 and the compound semiconductor device are arranged on the bonding film 120, so that the switch element 131 and the compound semiconductor device are integrated into one. The specific structure of the compound semiconductor device is not limited in the present embodiment of the application, and an example may be as follows: Figure 2 A HEMT device 132 is shown.
[0044] Specifically, the specific configuration of the HEMT device 132 and the switch element 131 is not limited in the present embodiment of the application, and can be exemplified as follows: Figure 2 The spacing arrangement shown may also be a side-bonding arrangement or a partially overlapping arrangement in the vertical direction; when the HEMT device 132 and the switch element 131 are spaced or bonded, the HEMT device 132 and the switch element 131 are respectively in contact with the bonding film 120. When the HEMT device 132 and the switch element 131 are overlapped, the switch element 131 may be arranged on the HEMT device 132, and a contact electrode of the switch element 131 is vertically connected to an electrode of the HEMT device 132.
[0045] In addition, the specific structure of the switch element 131 is not limited in the embodiment of the present application. For example, it can be a MOS tube 133 or a driving chip 134. When the switch element 131 is a MOS tube 133, the source of the MOS tube 133 is connected to the source of the HEMT, and the drain of the MOS tube 133 is connected to the gate of the HEMT device 132 to form a common source and common gate device, wherein the gate of the MOS tube 133 serves as the gate of the common source and common gate device, the drain of the MOS tube 133 is connected to the gate of the HEMT device 132 and is led out as the source of the common source and common gate device, and the drain of the HEMT device 132 serves as the drain of the common source and common gate device.
[0046] When the switch element 131 is a driver chip 134, the control end of the driver chip 134 is connected to the gate of the HEMT device 132, and the chip select end of the driver chip 134 is connected to the source of the HEMT device 132 to form a cascode device, wherein the input end of the MOS tube 133 serves as the gate of the cascode device, the drain of the HEMT device 132 serves as the drain of the cascode device and is connected as the source of the cascode device, and the drain of the HEMT device 132 serves as the drain of the cascode device.
[0047] S30: Figure 3 As shown, a plastic packaging material 140 is used to package the switch element 131 and the HEMT device 132 to form a package;
[0048] When the plastic encapsulation material 140 is encapsulated, the plastic encapsulation material 140 simultaneously encapsulates and solidifies the switch element 131 and the HEMT device 132 . Thus, the switch element 131 and the HEMT device 132 can be encapsulated in one encapsulation process, thereby reducing the number of encapsulations, shortening the encapsulation cycle, and improving efficiency.
[0049] S40: Figure 4 and Figure 5As shown, a circuit interconnection layer 150 is formed on the package, and the circuit interconnection layer 150 connects the switch element 131 and the HEMT device 132;
[0050] The circuit interconnection layer 150 connects the switch element 131 and the HEMT device 132 to form a cascode device, and leads out connection points to form various electrodes of the cascode device.
[0051] S50: Figure 5 As shown, the carrier 110 and the bonding film 120 are removed to form a connector 160;
[0052] After the plastic encapsulation material 140 encapsulates the switch element 131 and the HEMT device 132 to form a package, the plastic encapsulation material 140 has a certain strength after curing. At this time, the functions of the carrier 110 and the bonding film 120 are completed, and the carrier 110 and the bonding film 120 are removed to reduce the volume of the connector 160.
[0053] S60: Figure 6 As shown, the connecting body 160 is placed in the frame 170, and the wiring points on the circuit interconnection layer 150 and the frame 170 are connected to form a common source and common gate device.
[0054] Among them, the frame 170 is respectively provided with wiring points corresponding to the gate, source and drain of the common source and common gate device, the connector 160 is placed in the frame 170 and fixed to the frame 170, and each electrode on the circuit interconnection layer 150 and the wiring points on the frame 170 are connected one by one.
[0055] The present application provides a method for preparing a cascode device packaging structure, comprising: providing a carrier 110 and setting a bonding film 120 on the carrier 110; setting a switch element 131 and a HEMT device 132 on the bonding film 120; using a plastic packaging material 140 to encapsulate the switch element 131 and the HEMT device 132 to form a package; the switch element 131 and the HEMT device 132 can be connected into an integrated structure by one plastic packaging. A circuit interconnection layer 150 is formed on the package, and the circuit interconnection layer 150 connects the switch element 131 and the HEMT device 132, so that the switch element 131 and the HEMT device 132 are connected through the circuit interconnection layer 150 to form a cascode device; removing the carrier 110 and the bonding film 120 to form a connector 160; placing the connector 160 in a frame 170, and connecting the circuit interconnection layer 150 and the wiring points on the frame 170 to form a cascode device. In the preparation method of the common source and common gate device packaging structure provided in the present application, only one packaging is required to connect the switch element 131 and the HEMT device 132 to the frame 170 to form a common source and common gate device, which reduces the number of chip mounting and plastic packaging, shortens the packaging cycle, and improves the packaging efficiency.
[0056] Optionally, a circuit interconnection layer 150 is formed on the package, and the circuit interconnection layer 150 connects the switch element 131 and the HEMT device 132, including:
[0057] S41: Drilling holes corresponding to the electrodes of the switch element 131 and the HEMT device 132 on the plastic packaging material 140 to form connection holes;
[0058] S42: Figure 4 As shown, a metal layer is formed on the package, and the metal layer fills the connection hole to form a connection column 181, and the connection column 181 is respectively connected to the electrodes of the switch element 131 and the HEMT device 132;
[0059] S43: Figure 5 As shown, the metal layer is patterned to form a circuit interconnection layer 150 , and the circuit interconnection layer 150 is connected to the connection pillar 181 to connect the switch element 131 and the HEMT device 132 through the connection pillar 181 .
[0060] After the metal layer is patterned to form the circuit interconnection layer 150, electrodes may be provided to lead out various lead-out points in the circuit interconnection layer 150 to form electrodes, such as Figure 5 As shown, in this process, the area of the electrode can be increased according to actual needs, so that the electrode has a larger area when connected to the frame 170. Compared with the prior art, the electrode of the switch element 131 or the HEMT device 132 (hereinafter referred to as the component) is directly connected to the connection point of the frame 170. When the common source and common gate device is a large current device, it is necessary to use aluminum wires, passbands or aluminum tapes to connect the electrodes of the component and the connection points on the frame 170. These connecting wires are all thicker. At this time, the component needs to have a larger electrode, so that the component has a larger area. In this way, it will cause a waste of the area of the component. In the embodiment of the present application, the circuit interconnection layer 150 is formed on the package. Since the package has a larger area than the component, when the electrode is set on the circuit layer, the area of the electrode is larger, which is suitable for high-current devices. In this way, the area of the electrode can be increased without changing the area of the component, avoiding the waste of the area of the component.
[0061] In one achievable manner of the embodiment of the present application, after removing the carrier 110 and the bonding film 120 to form the connector 160, the preparation method further includes:
[0062] S51: Fig. 9 and Fig.12 As shown, a connecting hole is formed by drilling a hole on the plastic packaging material 140 through the back side of the connecting body 160, so that the connecting hole is in contact with the circuit interconnection layer 150;
[0063] S52: Fig. 9 and Fig.12As shown, a lead layer 193 is formed on the back side of the connector 160 , and the lead layer 193 fills the via hole to form a pillar 182 . The pillar 182 is connected to the circuit interconnection layer 150 to guide the electrode of the HEMT device 132 to the lead layer 193 through the pillar 182 and the circuit interconnection layer 150 .
[0064] A lead-out layer 193 is formed on the back of the connector 160, so that electrodes of the common-source and common-gate devices are formed on both sides of the connector 160, respectively. In this way, the space on both sides of the connector 160 can be more fully utilized. Fig.10 and Fig.11 As shown, the source of the common-source common-gate device is guided to the lead-out layer 193 on the back of the connector 160 through the pillar 182; or as shown in FIG. Fig.12 and Fig.13 As shown, the gate of the common-source common-gate device is led to the lead-out layer 193 on the back side of the connecting body 160.
[0065] In addition, arranging the electrodes on the two side surfaces of the connector 160 can provide a larger design space for the electrodes on both sides, thus facilitating the layout of the electrodes.
[0066] Optionally, when the connector 160 is placed in the frame 170 and the wiring points on the circuit interconnection layer 150 and the frame 170 are connected to form a common source and common gate device, the lead-out layer 193 is patch-connected to the electrode surface of the frame 170 .
[0067] Part of the electrodes in the circuit interconnection layer 150 are guided to the back side of the connecting body 160 through the lead-out layer 193 and the pillar 182, and exist in the form of the lead-out layer 193, such as Fig.10 As shown, when the connector 160 is placed in the frame 170, the lead-out layer 193 has a large contact area and can be directly connected to the electrode surface patch of the frame 170, so that the electrodes of the common source and common gate device can be easily led out, such as Fig.11 shown.
[0068] The connector 160 is connected to the frame 170 by patch connection, which is convenient for connection and can realize both mechanical connection and electrical connection.
[0069] In one possible implementation of the embodiment of the present application, Fig.14 As shown, before the switch element 131 and the HEMT device 132 are encapsulated by the plastic encapsulation material 140 to form a package, the preparation method further includes: arranging a passive device 190 on the bonding film 120, and the passive device 190 is arranged spaced apart from the switch element 131 and the HEMT device 132.
[0070] Passive device 190 is disposed on bonding film 120 to increase the function of the cascode device and expand the performance of the cascode device. Specifically, the specific form and structure of passive device 190 are not limited in the embodiment of the present application, and examples thereof may be resistors, capacitors, diodes, temperature detectors, etc.
[0071] Specifically, during plastic packaging, the passive device 190 , the switch element 131 and the HEMT device 132 are simultaneously packaged into the packaging material, and subsequently, a connection hole is opened in the corresponding passive device 190 to connect the passive device 190 to the circuit interconnection layer 150 or the lead-out layer 193 .
[0072] Optionally, the switch element 131 is a driver chip 134 , a MOS tube 133 , or a component in which the two are connected in series.
[0073] The above specifically describes the specific connection form of the switch element 131 as the driver chip 134 or the MOS tube 133. Here, the components of the two connected in series are specifically described. Fig.16 As shown, the control end of the driving chip 134 and the gate of the MOS transistor 133 are connected through the circuit interconnection layer 150, the chip select end of the driving chip is led out through the circuit interconnection layer 150, the source of the MOS transistor 133 is connected to the source of the HEMT, and the drain of the MOS transistor 133 is connected to the gate of the HEMT device 132 and led out as the source of the common source and common gate device.
[0074] When the switch element 131 is a component in which a driver chip 134 and a MOS transistor 133 are connected in series, the HEMT device 132 can be further controlled by the driver chip 134 and the MOS transistor 133, thereby further improving the performance and stability of the common-source common-gate device.
[0075] In one achievable manner of the embodiment of the present application, before the switch element 131 and the HEMT device 132 are arranged on the bonding film 120, the preparation method further includes:
[0076] S11: Figure 7 and Figure 8 As shown, connecting pieces 191 are arranged at intervals on the bonding film 120, and the connecting pieces 191 are used to respectively arrange the switching element 131 and the HEMT device 132, wherein the connecting piece 191 is connected to the switching element 131 and extends out of the switching element 131 to form an extension portion in a direction perpendicular to the layer.
[0077] In practical applications, the electrodes of some switching elements 131 are arranged on the two sides of the switching element 131. In order to facilitate the lead-out of the back electrodes of the switching element 131, connecting pieces 191 can be arranged at intervals on the bonding film 120, and the switching element 131 and the HEMT device 132 are respectively arranged on the connecting pieces 191, so that the connecting pieces 191 can be directly connected to the electrodes on the back of the parts. In the direction perpendicular to the hierarchy, the connecting piece 191 extends out of the switching element 131 to form an extension portion, and the connecting piece 191 is led out through the extension portion.
[0078] Specifically, those skilled in the art may set the corresponding relationship between the connecting piece 191 and the components according to actual conditions.
[0079] It can be understood that when the HEMT device 132 and the switching element 131 are arranged with a gap or in contact with each other, a connecting piece can be set under both components; when the HEMT device 132 and the switching element 131 are arranged to partially overlap, a connecting piece can be set under the bonding film 120 and the lower layer component.
[0080] Specifically, the connecting sheet 191 can be a sheet material with good conductivity, such as a copper sheet, a silver sheet, etc. Fig.14 As shown, a connecting piece 191 may also be provided under the passive component 190 .
[0081] Optional, such as Fig.15 As shown, before the switch element 131 and the HEMT device 132 are encapsulated by the plastic encapsulation material 140 to form a package, the preparation method includes: providing a connecting member 192 on the protruding portion.
[0082] When the electrodes of the switch element 131 and the HEMT device 132 are led out through the connecting piece 191, since the connecting piece 191 is arranged between the bonding film 120 and the switch element 131, when the connecting hole is formed in the plastic packaging material 140, the depth of the connecting hole is large and it is not easy to operate. In the embodiment of the present application, a connecting piece 192 is arranged on the protruding portion, so that subsequent drilling and filling to form the connecting column 181 is avoided. The connecting piece 192 is used to replace the connecting column 181. On the basis of achieving electrical connection, the number of holes drilled is reduced and deep drilling of holes is avoided.
[0083] Specifically, the material and form of the connecting member 192 are not limited in the embodiment of the present application, and for example, it can be a copper block, a silver block, etc.
[0084] In one implementable manner of the embodiment of the present application, a circuit interconnection layer 150 is formed on the package, and the circuit interconnection layer 150 connects the switch element 131 and the HEMT device 132, including: when the switch element 131 is a driver chip 134 and a MOS tube 133 connected in series, the control end of the driver chip 134 and the gate of the MOS tube 133 are connected through the circuit interconnection layer 150, and the chip select end of the driver chip is led out through the circuit interconnection layer 150.
[0085] The present application also discloses a common source and common gate device packaging structure, such as Figure 6 , Fig.11 and Fig.13 As shown, it is prepared by the above-mentioned preparation method of the common source and common gate device packaging structure, including a frame 170 and a connector 160 arranged on the frame 170, the connector 160 includes a packaging body and a circuit connection layer arranged on the surface of the packaging body, the packaging body encapsulates a switch element 131 and a HEMT device 132, and the switch element 131 and the HEMT device 132 are connected through the circuit connection layer.
[0086] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A method for preparing a common source and common gate device packaging structure, characterized in that: include: Providing a carrier and disposing a bonding film on the carrier; Disposing a switch element and a compound semiconductor device on the bonding film; Using a plastic packaging material to encapsulate the switch element and the compound semiconductor device to form a package; forming a circuit interconnection layer on the package, wherein the circuit interconnection layer connects the switch element and the compound semiconductor device; removing the carrier plate and the bonding film to form a connector; The connecting body is placed in the frame, and the circuit interconnection layer and the wiring points on the frame are connected to form a common source and common gate device.
2. The preparation method according to claim 1, characterized in that: The circuit interconnection layer is formed on the package, and the circuit interconnection layer connects the switch element and the compound semiconductor device, including: Drilling holes in the plastic packaging material to form connection holes corresponding to the switching element and the electrodes of the compound semiconductor device; forming a metal layer on the package, wherein the metal layer fills the connection holes to form connection pillars, and the connection pillars are respectively connected to the switch element and the electrodes of the compound semiconductor device; The metal layer is patterned to form a circuit interconnection layer, and the circuit interconnection layer is connected to the connection column to connect the switch element and the compound semiconductor device through the connection column.
3. The preparation method according to claim 1, characterized in that: After removing the carrier and the bonding film to form a connector, the method further includes: Drilling a hole in the plastic packaging material from the back side of the connector to form a connecting hole, so that the connecting hole contacts the circuit interconnection layer; A lead-out layer is formed on the back side of the connector. The lead-out layer fills the via hole to form a column. The column is connected to the circuit interconnection layer so as to guide the electrode of the compound semiconductor device to the lead-out layer through the column and the circuit interconnection layer.
4. The preparation method according to claim 3, characterized in that: When the connector is placed in the frame and the circuit interconnection layer is connected to the wiring points on the frame to form a common source and common gate device, the lead-out layer is patch-connected to the electrode surface of the frame.
5. The preparation method according to claim 3, characterized in that: Before the switch element and the compound semiconductor device are encapsulated by the plastic encapsulation material to form a package, the preparation method further comprises: A passive device is arranged on the bonding film, and the passive device is arranged spaced apart from the switch element and the compound semiconductor device.
6. The preparation method according to claim 1, characterized in that: The switch element is a driver chip, a MOS tube or a component in which the two are connected in series.
7. The preparation method according to claim 1, characterized in that: Before arranging the switch element and the compound semiconductor device on the bonding film, the method further comprises: Connecting sheets are arranged at intervals on the bonding film, and the connecting sheets are used to respectively arrange switching elements and compound semiconductor devices, wherein the connecting sheets are connected to the switching elements and extend out of the switching elements to form an extension in a direction perpendicular to the layer.
8. The preparation method according to claim 7, characterized in that: Before the switch element and the compound semiconductor device are encapsulated by the plastic encapsulation material to form a package, the preparation method further comprises: A connecting piece is arranged on the protruding portion.
9. The preparation method according to claim 6, characterized in that: The forming of a circuit interconnection layer on the package, wherein the circuit interconnection layer connects the switch element and the compound semiconductor device comprises: When the switch element is a driver chip and a MOS tube connected in series, the control end of the driver chip and the gate of the MOS tube are connected through a circuit interconnection layer, and the chip selection end of the driver chip is led out through the circuit interconnection layer.
10. A common source and common gate device packaging structure, characterized in that: The method for preparing a common-source and common-gate device packaging structure according to any one of claims 1 to 9 comprises a frame and a connector arranged on the frame, the connector comprises a packaging body and a circuit connection layer arranged on the surface of the packaging body, a switching element and a compound semiconductor device are encapsulated in the packaging body, and the switching element and the compound semiconductor device are connected via the circuit connection layer.