Test method, test device and electronic device

Abstract

The application discloses a test method, a test device and electronic equipment, and the method comprises the following steps: controlling a detection system corresponding to a plurality of detection methods to detect a prefabricated cell, and obtaining a plurality of detection resistances corresponding to a plurality of preset relationships one by one, wherein the structural information of the prefabricated cell comprises one of the following: the film layers located on both sides of the prefabricated cell are a first doped layer and a substrate respectively, and the film layers located on both sides of the prefabricated cell are a first doped layer and a second doped layer respectively; the detection resistance satisfies a corresponding preset relationship with at least one target resistance, which is the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate; and according to the detection resistance, the preset relationship corresponding to the detection resistance and a preset resistance, a tunneling resistance and / or a tunneling resistivity of a tunneling passivation layer are determined, and the preset resistance comprises the resistance of the substrate. The problem that the tunneling resistance and / or the tunneling resistivity of the solar cell cannot be quickly and accurately detected is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar resistivity testing, in particular to a testing method, a testing device and an electronic device. BACKGROUND

[0002] The resistance of a tunneling passivation layer commonly used in a tunnel oxide passivating contact (TOPcon) solar cell is difficult to accurately test. A special sample is usually used for testing, such as a double-sided tunneling passivation + double-sided diffusion sample after metallization, and the resistance value along the thickness of the cell is tested offline to estimate the tunneling resistance. The commonly used method has the following defects: the sample used for testing the tunneling resistance is difficult to make, has a long preparation period, consumes metal electrode materials, and the measured value is unstable; it is difficult to achieve online detection using traditional methods. SUMMARY

[0003] The present application provides a testing method, a testing device and an electronic device to solve the problem that the tunneling resistance and / or tunneling resistivity of a solar cell cannot be quickly and accurately detected in the related art.

[0004] According to one aspect of the present application, a detection method is provided, comprising: controlling a detection system corresponding to a plurality of detection methods to detect a preform cell to obtain a plurality of detection resistances corresponding to a plurality of preset relationships one by one, wherein the structure information of the preform cell includes one of the following: the film layers located on both sides of the preform cell are a first doped layer and a substrate, and the film layers located on both sides of the preform cell are a first doped layer and a second doped layer, wherein the first doped layer is located on the side of the tunneling passivation layer of the preform cell away from the substrate, the second doped layer is located on the side of the substrate away from the tunneling passivation layer, the first doped layer and the second doped layer have different polarities, and the first doped layer and the substrate have the same doping polarity; the detection resistance satisfies a corresponding preset relationship with at least one target resistance: the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate; determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and a preset resistance, wherein the preset resistance includes the resistance of the substrate.

[0005] Optionally, the structure information of the preform cell is obtained; and the plurality of detection methods and the plurality of preset relationships corresponding to the plurality of detection methods are determined according to the structure information.

[0006] Optionally, the control multiple detection methods corresponding to the detection system for the detection of preform battery, get with multiple preset relationship one-to-one corresponding multiple detection resistance, including: in the structure information includes preform battery in the two sides of the film layer is respectively the first doped layer and the base, control the first detection system using the first detection method to detect the first doped layer and the base, get the first detection resistance, the first detection method has corresponding first preset relationship, the first preset relationship includes: the relationship between the first detection resistance, the resistance of the first doped layer, the tunneling resistance and the resistance of the base; control the second detection system using the second detection method to detect the first doped layer and the base, get the second detection resistance, or, control the third detection system using the third detection method to detect the preform battery, get the third detection resistance, the second detection method has corresponding second preset relationship, the third detection method has corresponding third preset relationship, the first doped layer and the base have the same polarity, the second preset relationship includes: the relationship between the second detection resistance, the resistance of the first doped layer and the resistance of the base, the third preset relationship includes: the relationship between the third detection resistance, the resistance of the first doped layer and the resistance of the base.

[0007] Optionally, the control multiple detection methods corresponding to the detection system for the detection of preform battery, get with multiple preset relationship one-to-one corresponding multiple detection resistance, including: in the structure information includes preform battery in the two sides of the film layer is respectively the first doped layer and the second doped layer, control the second detection system using the second detection method to detect the first doped layer and the base, get the second detection resistance, the second detection method has corresponding second preset relationship, the first doped layer and the base have the same polarity, the second preset relationship includes: the relationship between the second detection resistance, the resistance of the first doped layer and the resistance of the base; control the first detection system using the first detection method to detect the first doped layer and the base, get the first detection resistance, the first detection method has corresponding first preset relationship, the first preset relationship includes: the relationship between the first detection resistance, the resistance of the first doped layer, the tunneling resistance and the resistance of the base.

[0008] Optionally, the control multiple detection methods corresponding to the detection system for the detection of the preform battery, get a plurality of detection resistance corresponding to a plurality of preset relationship one by one, including: in the case of structural information including the film layer located at both sides of the preform battery is the first doped layer and the second doped layer, control the first detection system using the first detection method to detect the second doped layer, get the first sub detection resistance, or control the second detection system using the second detection method to detect the second doped layer, get the second detection resistance, the first detection method has the corresponding fourth preset relationship, the fourth preset relationship includes the first sub preset relationship and the second sub preset relationship, the first sub preset relationship includes: the relationship between the first sub detection resistance and the resistance of the second doped layer, the second sub preset relationship includes: the relationship between the second sub detection resistance, the resistance of the first doped layer, the tunneling resistance and the resistance of the substrate, the second detection method has the corresponding fifth preset relationship, the fifth preset relationship includes: the relationship between the second detection resistance, the resistance of the second doped layer and the resistance of the first doped layer; control the third detection system using the third detection method to detect the preform battery, get the third detection resistance, the third detection method has the corresponding sixth preset relationship, the sixth preset relationship includes: the relationship between the third detection resistance, the resistance of the first doped layer, the resistance of the second doped layer and the resistance of the substrate; control the first detection system using the first detection method to detect the first doped layer and the substrate, get the second sub detection resistance.

[0009] Optionally, according to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer are determined, including: in the case of controlling the second detection system to detect the first doped layer and the substrate using the second detection method, determining the resistance of the first doped layer according to the second detection resistance and the second preset relationship; in the case of controlling the third detection system to detect the first doped layer and the substrate using the third detection method, determining the resistance of the first doped layer according to the third detection resistance and the third preset relationship; determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0010] Optionally, according to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer are determined, including: determining the resistance of the first doped layer according to the second detection resistance and the second preset relationship; determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0011] Optionally, the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer are determined according to the detection resistance, the preset relationship corresponding to the detection resistance, and a preset resistance, including: in a case where the first detection system detects the second doped layer by using the first detection method to obtain a first detection resistance, determining the resistance of the first doped layer according to the first sub-detection resistance, the third detection resistance, the first sub-pre-set relationship, and the sixth preset relationship; in a case where the second detection system detects the second doped layer by using the second detection method to obtain a second detection resistance, determining the resistance of the first doped layer according to the second detection resistance, the third detection resistance, the fifth preset relationship, and the sixth preset relationship; and determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the second sub-detection resistance, and the second sub-pre-set relationship.

[0012] According to another aspect of the present application, a test device is provided, including: a control module configured to control a detection system corresponding to a plurality of detection methods to detect the pre-product battery to obtain a plurality of detection resistances corresponding to a plurality of preset relationships, wherein the structure information of the pre-product battery includes one of the following: the film layers on both sides of the pre-product battery are the first doped layer and the substrate, respectively, and the film layers on both sides of the pre-product battery are the first doped layer and the second doped layer, respectively, wherein the first doped layer is located on a side of the tunneling passivation layer in the pre-product battery away from the substrate, the second doped layer is located on a side of the substrate away from the tunneling passivation layer, the first doped layer and the second doped layer have different polarities, and the first doped layer and the substrate have the same doping polarity; the detection resistance satisfies a corresponding preset relationship with at least one target resistance, including the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate; and a first determination module configured to determine the tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and a preset resistance, wherein the preset resistance includes the resistance of the substrate.

[0013] Optionally, the test device further includes: an acquisition module configured to acquire the structure information of the pre-product battery; and a second determination module configured to determine a plurality of detection methods and a plurality of preset relationships corresponding to the plurality of detection methods according to the structure information.

[0014] According to still another aspect of the present application, a computer readable storage medium is provided, including a stored program, wherein the test method performed by the device where the computer readable storage medium is located is controlled when the program is running.

[0015] According to still another aspect of the present application, an electronic device is provided, comprising: one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs comprise a test method for execution.

[0016] By the test method of the present application, the detection system corresponding to the above detection method is used to detect the pre-product battery, the detected resistance has a corresponding relationship with the above preset relationship, and the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined according to the detected resistance, the preset relationship corresponding to the detected resistance and the preset resistance, so that the tunneling resistance and / or tunneling resistivity of the pre-product battery are quickly and accurately tested, and the problem that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be quickly and accurately detected in the related art is solved. BRIEF DESCRIPTION OF DRAWINGS

[0017] The accompanying drawings, which form a part of the present application, are intended to provide further understanding of the present application, and the illustrative embodiments of the present application and their description serve the purpose of explaining the present application. The accompanying drawings should not be construed as an inappropriate limitation on the present application. In the drawings:

[0018] Figure 1 A hardware structure block diagram of a mobile terminal for executing a test method provided in an embodiment of the present application is shown;

[0019] Figure 2 is a flow structure schematic diagram of a test method provided according to an embodiment of the present application;

[0020] Figure 3 is a structure schematic diagram of a test method provided according to an embodiment of the present application;

[0021] Figure 4 is a structure schematic diagram of another test method provided according to an embodiment of the present application;

[0022] Figure 5 is a structure schematic diagram of still another test method provided according to an embodiment of the present application;

[0023] Figure 6 is a structure schematic diagram of still another test method provided according to an embodiment of the present application;

[0024] Figure 7 is a structure schematic diagram of still another test method provided according to an embodiment of the present application;

[0025] Figure 8 is a structure block diagram of a test device provided according to an embodiment of the present application.

[0026] Among the above drawings, the following reference signs are included:

[0027] 102, processor; 104, memory; 106, transmission device; 108, input / output device; 10, first doped layer; 20, substrate; 30, tunneling passivation layer; 40, first detection system; 50, second detection system; 51, light source; 52, capacitive electrode; 60, third detection system; 61, eddy current sensor; 62, coil; 70, second doped layer. DETAILED DESCRIPTION

[0028] It should be noted that the embodiments and features of the embodiments in the present application can be combined with each other without conflict. The technical solutions in the embodiments of the present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0029] In order for those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should be within the scope of protection of the present application.

[0030] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not necessarily limit to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0031] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present application.

[0032] The method embodiments provided in the embodiments of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device. Taking the running on a mobile terminal as an example, Figure 1 is a hardware structure block diagram of a mobile terminal of a test method according to an embodiment of the present application. As Figure 1 shown, the mobile terminal can include one or more Figure 1The mobile terminal can further include a transmission device 106 for communication function and an input / output device 108. Those skilled in the art can understand that, Figure 1 The structure shown is only schematic and does not limit the structure of the mobile terminal. For example, the mobile terminal can include more or less components than those shown, or have a different configuration or arrangement of the components. Figure 1 The mobile terminal can include more or less components than those shown, or have a different configuration or arrangement of the components. Figure 1 The mobile terminal can include more or less components than those shown, or have a different configuration or arrangement of the components.

[0033] The memory 104 is used for storing computer programs, such as software programs of application software and modules, for example, a computer program corresponding to the test method in the embodiments of the present application. The processor 102 executes various functional applications and data processing by running the computer programs stored in the memory 104, that is, implements the method described above. The memory 104 can include a high-speed random access memory, and can further include a non-volatile memory, such as one or more magnetic storage devices, flash memories, or other non-volatile solid-state memories. In some examples, the memory 104 can further include a memory remotely arranged with respect to the processor 102, and the remote memory can be connected to the mobile terminal through a network. Examples of the network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and a combination thereof. The transmission device 106 is used for receiving or sending data via a network. The specific example of the network can include a wireless network provided by a communication provider of the mobile terminal. In one example, the transmission device 106 includes a network adapter (NIC), which can be connected to other network devices through a base station so as to communicate with the Internet. In one example, the transmission device 106 can be a radio frequency (RF) module, which is used for communicating with the Internet in a wireless manner.

[0034] In the embodiments, a test method for insulators running on a mobile terminal, a computer terminal or a similar computing device is provided. It should be noted that the steps shown in the flowchart of the drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0035] Figure 2 is a flowchart of the test method according to the embodiments of the present application. As Figure 2 shown, the method includes the following steps:

[0036] Step S201: Control the detection system corresponding to the above-mentioned detection method to detect the above-mentioned pre-product battery, and obtain a plurality of detection resistances corresponding to a plurality of above-mentioned preset relationships one by one. The structure information of the pre-product battery includes one of the following: the film layers located on both sides of the pre-product battery are the first doped layer and the substrate, and the film layers located on both sides of the pre-product battery are the first doped layer and the second doped layer. The first doped layer is located on the side of the tunneling passivation layer in the pre-product battery away from the substrate, and the second doped layer is located on the side of the substrate away from the tunneling passivation layer. The first doped layer and the second doped layer have different polarities, and the first doped layer has the same doping polarity as the substrate. The above-mentioned detection resistances satisfy the corresponding above-mentioned preset relationships with at least one target resistance: the resistance of the above-mentioned first doped layer, the resistance of the above-mentioned second doped layer, and the resistance of the above-mentioned substrate;

[0037] Step S202: Determine the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the above-mentioned detection resistances, the above-mentioned preset relationships corresponding to the above-mentioned detection resistances, and the preset resistances. The preset resistances include the resistance of the substrate.

[0038] The present application controls the detection system corresponding to the above-mentioned detection method to detect the pre-product battery. The resistance detected has a corresponding relationship with the above-mentioned preset relationship. The tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance. The tunneling resistance and / or tunneling resistivity of the pre-product battery are quickly and accurately tested, and the problem that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be quickly and accurately detected in the related art is solved.

[0039] It can be understood that in some embodiments, before step S201, the method further includes: obtaining the structure information of the pre-product battery; and determining a plurality of detection methods and a plurality of preset relationships corresponding to the plurality of above-mentioned detection methods according to the above-mentioned structure information.

[0040] By adding the above-mentioned steps, it can be automatically determined which detection system to use for testing, improving the automation degree of the entire testing method, thereby improving the detection efficiency. The above-mentioned pre-product battery can be a semi-finished battery piece or a finished battery piece.

[0041] In some optional embodiments, as Figure 3 and Figure 4As shown, the control multiple detection methods corresponding to the detection system of the above preform battery for detection, get and multiple detection resistance corresponding to multiple above pre-set relationship one by one, including: in the case of the structure information includes the film layer located on both sides of the above preform battery is the first doped layer 10 and the substrate 20, control the first detection system 40 using the first detection method for detection of the first doped layer 10 and the substrate 20, get the first detection resistance, the first detection method has corresponding first preset relationship, the first preset relationship includes: the relationship between the first detection resistance, the resistance of the first doped layer 10, the tunneling resistance and the resistance of the substrate 20; control the second detection system 50 using the second detection method for detection of the first doped layer 10 and the substrate 20, get the second detection resistance, or, control the third detection system 60 using the third detection method for detection of the preform battery, get the third detection resistance, the second detection method has corresponding second preset relationship, the third detection method has corresponding third preset relationship, the first doped layer 10 and the substrate 20 have the same polarity, the second preset relationship includes: the relationship between the second detection resistance, the resistance of the first doped layer 10 and the resistance of the substrate 20, the third preset relationship includes: the relationship between the third detection resistance, the resistance of the first doped layer 10 and the resistance of the substrate 20.

[0042] In the above optional embodiment, as shown in the above Figure 3 The tunneling passivation layer 30 is located between the first doped layer 10 and the substrate 20, the first detection system 40 can be a four-probe detection system, the second detection system 50 can be a junction photovoltage detection system, and the third detection system 60 can be an eddy current method detection system. When the structure information of the preform battery is detected as the film layers located on both sides are the first doped layer 10 and the substrate 20, that is, the single-face same-polarity diffusion battery piece, four-probe detection system and junction photovoltage detection system can be used for detection: control the junction photovoltage detection system to use the junction photovoltage method to detect the resistance of the first doped layer 10 and the substrate 20 of the preform battery to obtain the second detection resistance, the second preset relationship used by the junction photovoltage method is 1 / R JPV =1 / R N+ +1 / R bulk , the second detection resistance is R JPV ; control the four-probe detection system to use the four-probe method to detect the resistance of the first doped layer 10 and the substrate 20 of the preform battery to obtain the first detection resistance, the first preset relationship used by the four-probe method is 1 / R 4pp =1 / R N+ +1 / (2R tun +R bulk ), the first detection resistance is R 4pp , where RN+ R is the resistance of the first doped layer 10 tun R is the resistance of the tunneling passivation layer 30 (tunneling resistance) bulk R is the resistance of the substrate 20, wherein R bulk The four-probe method can be used for detection.

[0043] In the above optional embodiments, as shown in Figure 4 the tunneling passivation layer 30 is located between the first doped layer 10 and the substrate 20, and can also be detected by a four-probe detection system (first detection system 40) and an eddy current detection system (third detection system 60): the eddy current detection system is controlled to detect the resistance of the first doped layer 10 and the substrate 20 of the pre-product battery by the eddy current detection method to obtain a third detection resistance, and the third preset relationship used by the eddy current detection method is 1 / R edd = 1 / R N+ + 1 / R bulk , and the third detection resistance is R edd ; the four-probe detection system is controlled to detect the resistance of the first doped layer 10 and the substrate 20 of the pre-product battery by the four-probe method to obtain a first detection resistance, and the first preset relationship used by the four-probe method is 1 / R 4pp = 1 / R N+ + 1 / (2R tun + R bulk ), and the first detection resistance is R 4pp .

[0044] In some optional embodiments, according to the above detection resistance, the above preset relationship corresponding to the above detection resistance, and the preset resistance, the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer are determined, including: in the case of controlling the second detection system to detect the first doped layer and the substrate by the second detection method, determining the resistance of the first doped layer according to the second detection resistance and the second preset relationship; in the case of controlling the third detection system to detect the first doped layer and the substrate by the third detection method, determining the resistance of the first doped layer according to the third detection resistance and the third preset relationship; and determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first detection resistance, and the first preset relationship.

[0045] In the above optional embodiments, as shown in Figure 3 the first preset relationship and the second preset relationship are used, and according to the first detection resistance R 4pp , the second detection resistance R JPV , the resistance R N+ of the first doped layer, and the resistance R bulk of the substrate, the tunneling resistance Rtun wherein the resistance R bulk of the substrate is a known quantity.

[0046] In the above optional embodiments, as shown in Figure 4 , the first preset relationship and the third preset relationship are adopted, and the tunneling resistance R 4pp is obtained according to the first detection resistance R edd , the third detection resistance R N+ , the resistance R bulk of the first doped layer, and the resistance R tun of the substrate, wherein the resistance R bulk of the substrate is a known quantity. After the tunneling resistance is obtained by the above test method, the tunneling resistivity can be calculated according to the tunneling resistance. For example, the tunneling resistivity is equal to the tunneling resistance multiplied by the area of the cell sheet (the front surface area or the back surface area of the cell sheet).

[0047] In some optional embodiments, as shown in Figure 5 , the detection system corresponding to the above detection method is controlled to detect the pre-product cell to obtain a plurality of detection resistances corresponding to a plurality of preset relationships one by one, including: in the case that the structure information includes that the film layers located on both sides of the pre-product cell are the first doped layer 10 and the second doped layer 70 respectively, controlling the second detection system 50 to detect the first doped layer 10 and the substrate 20 by the second detection method to obtain the second detection resistance, the second detection method has a corresponding second preset relationship, the first doped layer 10 and the substrate 20 have the same polarity, and the second preset relationship includes the relationship among the second detection resistance, the resistance of the first doped layer 10, and the resistance of the substrate 20; controlling the first detection system 40 to detect the first doped layer 10 and the substrate 20 by the first detection method to obtain the first detection resistance, the first detection method has a corresponding first preset relationship, and the first preset relationship includes the relationship among the first detection resistance, the resistance of the first doped layer 10, the tunneling resistance, and the resistance of the substrate 20.

[0048] In the above optional embodiments, as shown in Figure 5 , the tunneling passivation layer 30 is located between the first doped layer 10 and the substrate 20, when it is detected that the structure information of the pre-product cell is that the film layers located on both sides are the first doped layer 10 and the second doped layer 70, i.e. the cell sheet with double-face different polarity diffusion, the four-probe detection system and the junction photovoltage detection system can be used for detection: controlling the junction photovoltage detection system (the second detection system 50) to detect the first doped layer 10 and the substrate 20 of the pre-product cell by the junction photovoltage method to obtain the second detection resistance, and the second preset relationship adopted by the junction photovoltage method is 1 / RJPV = 1 / R N+ + 1 / R bulk , the second detection resistance is R JPV ; the four-probe detection system (the first detection system 40) detects the first doped layer 10 and the substrate 20 of the above-mentioned pre-product battery by using the four-probe method to obtain the first detection resistance, and the first preset relationship used by the four-probe method is 1 / R 4pp = 1 / R N+ + 1 / (2R tun + R bulk ), the first detection resistance is R 4pp , wherein R N+ is the resistance of the first doped layer 10, R tun is the resistance (tunneling resistance) of the tunneling passivation layer 30, and R bulk is the resistance of the substrate 20. After obtaining the tunneling resistance by using the above-mentioned test method, the tunneling resistivity can be calculated according to the tunneling resistance.

[0049] In some optional embodiments, according to the above-mentioned detection resistance, the above-mentioned preset relationship corresponding to the above-mentioned detection resistance, and the preset resistance, the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer are determined, which comprises: determining the resistance of the first doped layer according to the above-mentioned second detection resistance and the above-mentioned second preset relationship; and determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the above-mentioned first detection resistance, and the above-mentioned first preset relationship.

[0050] In the above-mentioned optional embodiments, as shown in Figure 5 , the above-mentioned first preset relationship and the second preset relationship are used, and according to the above-mentioned first detection resistance R 4pp , the second detection resistance R JPV , the resistance R N+ of the first doped layer, and the resistance R bulk of the substrate, the tunneling resistance R tun can be obtained, wherein the resistance R bulk of the substrate is a known quantity. After obtaining the tunneling resistance by using the above-mentioned test method, the tunneling resistivity can be calculated according to the tunneling resistance.

[0051] In some optional embodiments, as shown in Figure 6 and Figure 7As shown, the control multiple detection methods corresponding to the detection system of the above preform battery for detection, get and multiple detection resistance corresponding to multiple above pre-set relationship one to one, including: in the case of the structure information includes the film layer located on both sides of the above preform battery is the first doped layer 10 and the second doped layer 70, control the first detection system 40 using the first detection method for detecting the second doped layer 70, get the first sub detection resistance, or control the second detection system 50 using the second detection method for detecting the second doped layer 70, get the second detection resistance, the first detection method has corresponding fourth pre-set relationship, the fourth pre-set relationship includes the first sub pre-set relationship and the second sub pre-set relationship, the first sub pre-set relationship includes: the relationship between the first sub detection resistance and the resistance of the second doped layer 70, the second sub pre-set relationship includes: the relationship between the second sub detection resistance, the resistance of the first doped layer 10, the tunneling resistance and the resistance of the substrate 20, the second detection method has corresponding fifth pre-set relationship, the fifth pre-set relationship includes: the relationship between the second detection resistance, the resistance of the second doped layer 70 and the resistance of the first doped layer 10; Control the third detection system 60 using the third detection method for detecting the preform battery, get the third detection resistance, the third detection method has corresponding sixth pre-set relationship, the sixth pre-set relationship includes: the relationship between the third detection resistance, the resistance of the first doped layer 10, the resistance of the second doped layer 70 and the resistance of the substrate 20; Control the first detection system 40 using the first detection method for detecting the first doped layer 10 and the substrate 20, get the second sub detection resistance.

[0052] In the above optional embodiment, as shown in the above Figure 6 The tunneling passivation layer 30 is located between the first doped layer 10 and the substrate 20, when detecting the structure information of the preform battery is located on both sides of the film layer is the first doped layer 10 and the second doped layer 70, that is, the battery sheet of double side different polarity diffusion, can adopt four probe detection system (first detection system 40) and eddy current detection system (third detection system 60) for detection: control four probe detection system using four probe detection method for detecting the resistance of the second doped layer 70 of the preform battery to get the first sub detection resistance, the first sub pre-set relationship of four probe detection method is 1 / R 4pp =1 / R P+ , the first sub detection resistance is R 4pp ; Control the eddy current detection system using eddy current detection method for detecting the resistance of the first doped layer 10, the substrate 20 and the second doped layer 70 of the preform battery to get the third detection resistance, the sixth pre-set relationship of eddy current detection method is 1 / R edd =1 / R N+ +1 / Rbulk +1 / R P+ , the third detection resistance is R edd ; the four-probe detection system is further controlled to detect the resistance of the first doped layer 10 and the substrate 20 by using the four-probe detection method, the four-probe detection method has a second preset relationship when detecting the resistance of the first doped layer 10 and the substrate 20, and a second sub-detection resistance R 4pp is obtained, the second preset relationship is consistent with the first preset relationship. Wherein R N+ is the resistance of the first doped layer 10, R P+ is the resistance of the second doped layer 70, and R bulk is the resistance of the substrate 20. The first four-probe detection method is to detect the resistance of the second doped layer 70 of the preform battery, and the second four-probe detection method is to detect the resistance of the first doped layer 10 and the substrate 20.

[0053] In the above optional embodiment, as shown in Figure 7 , the tunneling passivation layer 30 is located between the first doped layer 10 and the substrate 20, and can also be detected by using a junction photovoltage detection system and an eddy current detection system: the junction photovoltage detection system (second detection system 50) is controlled to detect the resistance of the second doped layer 70 of the preform battery by using the junction photovoltage method to obtain a second detection resistance, the fifth preset relationship used by the junction photovoltage method is 1 / R JPV = 1 / R bulk + 1 / R P+ , the second detection resistance is R JPV ; the eddy current detection system (third detection system 60) is controlled to detect the resistance of the first doped layer 10, the substrate 20 and the second doped layer 70 of the preform battery by using the eddy current detection method to obtain a third detection resistance, the sixth preset relationship used by the eddy current detection method is 1 / R edd = 1 / R N+ + 1 / R bulk + 1 / R P+ , the third detection resistance is R edd ; the four-probe detection system (first detection system 40) is further controlled to detect the resistance of the first doped layer 10 and the substrate 20 by using the four-probe detection method, the four-probe detection method has a second preset relationship when detecting the resistance of the first doped layer 10 and the substrate 20, and a second sub-detection resistance R 4pp is obtained, the second preset relationship is consistent with the first preset relationship. Wherein R N+ is the resistance of the first doped layer 10, R P+ is the resistance of the second doped layer 70, and R bulk is the resistance of the substrate 20. After the tunneling resistance is obtained by using the above test method, the tunneling resistivity can be calculated according to the tunneling resistance.

[0054] Figures 3 to 7 The third detection system 60 includes an eddy current sensor 61 and a coil 62. The eddy current sensor 61 is a sensor used to sense eddy currents and is typically composed of a coil and a magnetic core. When a high-frequency current passes through the coil 62, an alternating magnetic field is generated around the sensor. When the eddy current sensor 61 is close to the pre-fabricated battery, this magnetic field induces eddy currents. Based on the magnitude and frequency of the eddy currents, the resistance of the object under test can be inferred. Figure 3 and Figure 6 The second detection system 50 includes a light source 51 and a capacitor electrode 52. The light source 51 provides light, and when photons excite electrons and release them into the capacitor electrode 52, a voltage signal is generated on the capacitor electrode 52. By measuring the magnitude of this voltage signal, the resistance of the object under test can be determined.

[0055] In some optional embodiments, determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer based on the aforementioned detection resistance, the aforementioned preset relationship corresponding to the aforementioned detection resistance, and the preset resistance includes: when controlling the first detection system to detect the second doped layer using the first detection method and obtaining the first detection resistance, determining the resistance of the first doped layer based on the first sub-detection resistance, the third detection resistance, the first sub-preset relationship, and the sixth preset relationship; when controlling the second detection system to detect the second doped layer using the second detection method and obtaining the second detection resistance, determining the resistance of the first doped layer based on the second detection resistance, the third detection resistance, the fifth preset relationship, and the sixth preset relationship; and determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer based on the resistance of the first doped layer, the aforementioned second sub-detection resistance, and the aforementioned second sub-preset relationship.

[0056] In the above optional implementations, such as Figure 6 As shown, the first sub-preset relationship and the sixth preset relationship are adopted, and the first sub-detection resistor is R. 4pp The third detection resistor is R edd The resistance R of the substrate bulk The resistance R of the second doped layer P+ The resistance R of the first doped layer is obtained. N+ Then, based on the resistance R of the first doped layer... N+ The second sub-preset relationship, the resistance R of the substrate bulk Second sub-detection resistor R 4pp The tunneling resistance R can be obtained. tun The resistance R of the substrate bulk The quantity is known.

[0057] In the above optional implementations, such as Figure 7 As shown, the fifth and sixth preset relationships are adopted, and the second detection resistor is R.JPV , the third detection resistance is R edd , the resistance of the substrate is R bulk , and the resistance of the second doped layer is R P+ , the resistance of the first doped layer is R N+ ; and then according to the resistance of the first doped layer R N+ , the second sub preset relationship, the resistance of the substrate R bulk , and the second sub detection resistance R 4pp , the tunneling resistance R tun is obtained, wherein the resistance of the substrate R bulk is a known quantity. After the tunneling resistance is obtained by the above test method, the tunneling resistivity can be calculated according to the tunneling resistance.

[0058] It should be noted that the above embodiment is illustrated with the substrate being N type, the first doped layer being N+ type, and the second doped layer being P+ type. The doping types of the above layers can also be opposite doping types, i.e., the substrate is P, the first doped layer is P+, and the second doped layer is N+. At this time, when detecting the structure, only replace N+ with P+ and P+ with N+ in the formula of the above preset relationship.

[0059] The technical solution of the present application can realize offline or online fast tunneling resistance test and analysis of battery pieces, and can be used for testing the tunneling resistance or other arbitrary sheet resistance of photovoltaic cells such as full back electrode contact cells of zero busbar (0BB, Zero Busbar) or multi-busbar (MBB, MULTI-BUSBAR) technology, including interdigitated back contact (IBC), all back contact (ABC), hybrid passivated back contact (HPBC), passivated emitter and rear cell (PERC), tunnel oxide passivated contact (TOPcon), TOPcon-IBC cell, heterojunction with intrinsic thin-layer (HJT), perovskite laminated cell, flexible cell, etc.

[0060] According to another aspect of the present application, as Figure 8As shown, a test device is provided, comprising: a control module 100 configured to control a detection system corresponding to a plurality of detection methods to detect a pre-product battery to obtain a plurality of detection resistances corresponding to a plurality of preset relationships one by one, wherein the structure information of the pre-product battery comprises one of the following: the film layers located on both sides of the pre-product battery are a first doped layer and a substrate, and the film layers located on both sides of the pre-product battery are a first doped layer and a second doped layer, wherein the first doped layer is located on a side of the tunneling passivation layer in the pre-product battery away from the substrate, the second doped layer is located on a side of the substrate away from the tunneling passivation layer, the first doped layer and the second doped layer have different polarities, and the first doped layer and the substrate have the same doping polarity; the detection resistance satisfies a corresponding preset relationship with at least one target resistance: the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate; a first determination module 200 configured to determine a tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and a preset resistance, wherein the preset resistance comprises the resistance of the substrate.

[0061] The test device of the present application controls the detection system corresponding to the above-mentioned detection methods to detect the pre-product battery, and the detection resistance obtained by detection has a corresponding relationship with the above-mentioned preset relationship. The first determination module determines the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, thereby realizing rapid and accurate testing of the tunneling resistance and / or tunneling resistivity of the pre-product battery, and solving the problem that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be rapidly and accurately detected in the related art.

[0062] In some optional embodiments, the test device further comprises an acquisition module and a second determination module, wherein the acquisition module is configured to acquire the structure information of the pre-product battery; and the second determination module is configured to determine the plurality of detection methods and the plurality of preset relationships corresponding to the plurality of detection methods according to the structure information.

[0063] In some optional embodiments, the control module comprises a first sub-control module and a second sub-control module, the first sub-control module is configured to control the first detection system to detect the first doped layer and the substrate by using a first detection method to obtain a first detection resistance when the structure information indicates that the two film layers on the two sides of the pre-battery are the first doped layer and the substrate, the first detection method has a corresponding first preset relationship, the first preset relationship comprises a relationship among the first detection resistance, a resistance of the first doped layer, the tunneling resistance, and a resistance of the substrate; and the second sub-control module is configured to control the second detection system to detect the first doped layer and the substrate by using a second detection method to obtain a second detection resistance, or control the third detection system to detect the pre-battery by using a third detection method to obtain a third detection resistance, the second detection method has a corresponding second preset relationship, the third detection method has a corresponding third preset relationship, the first doped layer and the substrate have the same polarity, the second preset relationship comprises a relationship among the second detection resistance, the resistance of the first doped layer, and the resistance of the substrate, and the third preset relationship comprises a relationship among the third detection resistance, the resistance of the first doped layer, and the resistance of the substrate.

[0064] In some optional embodiments, the control module comprises a third sub-control module and a fourth sub-control module, the third sub-control module is configured to control the second detection system to detect the first doped layer and the substrate by using a second detection method to obtain a second detection resistance when the structure information indicates that the two film layers on the two sides of the pre-battery are the first doped layer and the second doped layer, the second detection method has a corresponding second preset relationship, the first doped layer and the substrate have the same polarity, and the second preset relationship comprises a relationship among the second detection resistance, a resistance of the first doped layer, and a resistance of the substrate; and the fourth sub-control module is configured to control the first detection system to detect the first doped layer and the substrate by using a first detection method to obtain a first detection resistance, the first detection method has a corresponding first preset relationship, and the first preset relationship comprises a relationship among the first detection resistance, the resistance of the first doped layer, the tunneling resistance, and the resistance of the substrate.

[0065] In some optional embodiments, the control module comprises a fifth sub-control module, a sixth sub-control module and a seventh sub-control module, the fifth sub-control module is configured to, in the case where the structure information comprises that the film layers located on the two sides of the pre-product battery are the first doped layer and the second doped layer respectively, control the first detection system to detect the second doped layer by using the first detection method to obtain a first sub-detection resistance, or control the second detection system to detect the second doped layer by using the second detection method to obtain a second detection resistance, the first detection method has a corresponding fourth preset relationship, the fourth preset relationship comprises a first sub-preset relationship and a second sub-preset relationship, the first sub-preset relationship comprises a relationship between the first sub-detection resistance and a resistance of the second doped layer, the second sub-preset relationship comprises a relationship between the second sub-detection resistance, a resistance of the first doped layer, a tunneling resistance and a resistance of the substrate, the second detection method has a corresponding fifth preset relationship, the fifth preset relationship comprises a relationship between the second detection resistance, the resistance of the second doped layer and the resistance of the first doped layer; the sixth sub-control module is configured to control the third detection system to detect the pre-product battery by using the third detection method to obtain a third detection resistance, the third detection method has a corresponding sixth preset relationship, the sixth preset relationship comprises a relationship between the third detection resistance, the resistance of the first doped layer, the resistance of the second doped layer and the resistance of the substrate; and the seventh sub-control module is configured to control the first detection system to detect the first doped layer and the substrate by using the first detection method to obtain a second sub-detection resistance.

[0066] In some optional embodiments, the first determination module comprises a first sub-determination module, a second sub-determination module and a third sub-determination module, the first sub-determination module is configured to, in the case where the second detection system is controlled to detect the first doped layer and the substrate by using the second detection method, determine the resistance of the first doped layer according to the second detection resistance and the second preset relationship; the second sub-determination module is configured to, in the case where the third detection system is controlled to detect the first doped layer and the substrate by using the third detection method, determine the resistance of the first doped layer according to the third detection resistance and the third preset relationship; and the third sub-determination module is configured to determine the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first sub-detection resistance and the first preset relationship.

[0067] In some optional embodiments, the first determination module comprises a fourth sub-determination module and a fifth sub-determination module, the fourth sub-determination module is configured to determine the resistance of the first doped layer according to the second detection resistance and the second preset relationship; and the fifth sub-determination module is configured to determine the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first sub-detection resistance and the first preset relationship.

[0068] In some optional embodiments, the first determining module comprises a sixth sub-determining module and a seventh sub-determining module. The sixth sub-determining module is configured to determine the resistance of the first doped layer according to the first sub-detection resistance, the third detection resistance, the first sub-predefined relationship, and the sixth predefined relationship, or according to the second detection resistance, the third detection resistance, the fifth predefined relationship, and the sixth predefined relationship. The seventh sub-determining module is configured to determine the tunneling resistance of the tunneling passivation layer according to the resistance of the first doped layer, the second sub-detection resistance, and the second sub-predefined relationship.

[0069] According to yet another aspect of the present disclosure, a computer-readable storage medium is provided, which includes a stored program. When the program is executed, the computer-readable storage medium controls a device where the computer-readable storage medium is located to perform the test method.

[0070] Specifically, the test method comprises:

[0071] Step S201: controlling a detection system corresponding to a plurality of detection methods to detect the preform battery to obtain a plurality of detection resistances corresponding to a plurality of predefined relationships one by one, wherein the structure information of the preform battery comprises one of the following: the film layers located on both sides of the preform battery are the first doped layer and the substrate, respectively, and the film layers located on both sides of the preform battery are the first doped layer and the second doped layer, respectively, wherein the first doped layer is located on a side of the tunneling passivation layer in the preform battery away from the substrate, the second doped layer is located on a side of the substrate away from the tunneling passivation layer, the first doped layer and the second doped layer have different polarities, and the first doped layer has the same doping polarity as the substrate; the detection resistances satisfy the corresponding predefined relationships with at least one target resistance: the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate;

[0072] Step S202: determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the detection resistances, the predefined relationships corresponding to the detection resistances, and a predefined resistance, wherein the predefined resistance comprises the resistance of the substrate.

[0073] According to yet another aspect of the present disclosure, an electronic device is provided, which comprises one or more processors, a memory, and one or more programs. The one or more programs are stored in the memory and configured to be executed by the one or more processors. The one or more programs comprise a program for performing the test method.

[0074] Specifically, the test method comprises:

[0075] Step S201: control the detection system corresponding to the plurality of detection methods to detect the preform battery, and obtain a plurality of detection resistances corresponding to a plurality of preset relationships one by one, wherein the structure information of the preform battery includes one of the following: the film layers located on both sides of the preform battery are a first doped layer and a substrate, and the film layers located on both sides of the preform battery are a first doped layer and a second doped layer, wherein the first doped layer is located on the side of the tunneling passivation layer in the preform battery away from the substrate, the second doped layer is located on the side of the substrate away from the tunneling passivation layer, the first doped layer and the second doped layer have different polarities, and the first doped layer and the substrate have the same doping polarity; the detection resistances satisfy the corresponding preset relationships with at least one target resistance: the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate;

[0076] Step S202: determine the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the detection resistances, the preset relationships corresponding to the detection resistances, and preset resistances, wherein the preset resistances include the resistance of the substrate.

[0077] Obviously, those skilled in the art should understand that each module or each step of the present application can be realized by a general computing device, which can be concentrated on a single computing device or distributed on a network composed of multiple computing devices, and can be realized by program codes executable by the computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in different order, or they can be manufactured into individual integrated circuit modules, or multiple modules or steps can be manufactured into a single integrated circuit module. Therefore, the present application is not limited to any specific combination of hardware and software.

[0078] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system, or a computer program product. Therefore, the present application can be in the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can be in the form of a computer program product implemented on one or more computer usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer usable program codes.

[0079] The computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart block or blocks. Figure 1 one or more flow or blocks Figure 1 one or more flow or blocks

[0080] These computer program instructions can also be stored in a computer readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer readable memory produce an article of manufacture including instructions which implement the function specified in the flowchart block or blocks. Figure 1 one or more flow or blocks Figure 1 one or more flow or blocks

[0081] The computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart block or blocks. Figure 1 one or more flow or blocks Figure 1 Figure 1 one or more flow or blocks

[0082] In one typical configuration, the computing device includes one or more processors (CPUs), input / output interfaces, network interfaces, and memory.

[0083] The memory can include non-persistent memory and / or persistent memory, for example, read only memory (ROM) and / or flash memory, for example, in the form of a computer readable medium. The memory is an example of computer readable media.

[0084] Computer-readable media includes permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology for information storage. Information can be computer-readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassette, magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information accessible to a computing device. According to the definition herein, computer-readable media does not include transitory media such as modulated data signals and carriers.

[0085] It should also be noted that the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that processes, methods, articles or devices including a series of elements not only include those elements, but also include other elements not explicitly listed or inherent to such processes, methods, articles or devices. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of additional identical elements in the process, method, article or device including the element.

[0086] From the above description, it can be seen that the above-mentioned embodiments of the present application achieve the following technical effects:

[0087] 1) The test method of the present application detects the preform battery by controlling the detection system corresponding to the above-mentioned detection method, and the resistance detected has a corresponding relationship with the above-mentioned preset relationship. According to the detected resistance, the preset relationship corresponding to the detected resistance and the preset resistance, the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer are determined, and the rapid and accurate test of the tunneling resistance and / or the tunneling resistivity of the preform battery is realized, solving the problem that the tunneling resistance and / or the tunneling resistivity of the solar cell cannot be rapidly and accurately detected in the related art.

[0088] 2) The testing device of this application controls the detection system corresponding to the above detection method to detect the preform cell through the control module. The detected resistance has a corresponding relationship with the above preset relationship. The first determining module determines the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the detected resistance, the preset relationship corresponding to the detected resistance and the preset resistance, thereby realizing the rapid and accurate testing of the tunneling resistance and / or tunneling resistivity of the preform cell, solving the problem in the related technology that it is impossible to quickly and accurately detect the tunneling resistance and / or tunneling resistivity of solar cells.

[0089] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A testing method, characterized in that, include: A detection system controlling multiple detection methods is used to detect a prefabricated battery, resulting in multiple detection resistors that correspond one-to-one with multiple preset relationships. The structural information of the prefabricated battery includes one of the following: the film layers located on both sides of the prefabricated battery are a first doped layer and a substrate, respectively; and the film layers located on both sides of the prefabricated battery are a first doped layer and a second doped layer, respectively. The first doped layer is located on the side of the tunneling passivation layer in the prefabricated battery facing away from the substrate, and the second doped layer is located on the side of the substrate facing away from the tunneling passivation layer. The first doped layer and the second doped layer have different polarities, and the doping polarity of the first doped layer is the same as that of the substrate. The detection resistors satisfy a preset relationship with at least one of the following target resistors: the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate. Based on the detection resistor, the preset relationship corresponding to the detection resistor, and the preset resistance, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined, wherein the preset resistance includes the resistance of the substrate.

2. The test method according to claim 1, characterized in that, The method further includes: Obtain the structural information of the prefabricated battery; Based on the structural information, multiple detection methods and multiple preset relationships corresponding to the multiple detection methods are determined.

3. The test method according to claim 1, characterized in that, The detection system, which controls multiple detection methods, detects the prefabricated battery to obtain multiple detection resistors that correspond one-to-one with multiple preset relationships, including: When the structural information includes the first doped layer and the substrate located on both sides of the preformed battery, the first detection system is controlled to use a first detection method to detect the first doped layer and the substrate to obtain a first detection resistance. The first detection method has a corresponding first preset relationship, which includes the relationship between the first detection resistance, the resistance of the first doped layer, the tunneling resistance and the resistance of the substrate. The second detection system is controlled to use a second detection method to detect the first doped layer and the substrate to obtain a second detection resistance; or, the third detection system is controlled to use a third detection method to detect the preform battery to obtain a third detection resistance. The second detection method has a corresponding second preset relationship, and the third detection method has a corresponding third preset relationship. The first doped layer and the substrate have the same polarity. The second preset relationship includes the relationship between the second detection resistance, the resistance of the first doped layer, and the resistance of the substrate. The third preset relationship includes the relationship between the third detection resistance, the resistance of the first doped layer, and the resistance of the substrate.

4. The test method according to claim 1, characterized in that, The detection system, which controls multiple detection methods, detects the prefabricated battery to obtain multiple detection resistors that correspond one-to-one with multiple preset relationships, including: When the structural information includes the first doped layer and the second doped layer located on both sides of the preformed battery, respectively, the second detection system is controlled to use a second detection method to detect the first doped layer and the substrate to obtain a second detection resistance. The second detection method has a corresponding second preset relationship, and the first doped layer and the substrate have the same polarity. The second preset relationship includes: The relationship between the second detection resistor, the resistance of the first doped layer, and the resistance of the substrate; The first detection system is controlled to use a first detection method to detect the first doped layer and the substrate to obtain a first detection resistance. The first detection method has a corresponding first preset relationship, which includes the relationship between the first detection resistance, the resistance of the first doped layer, the tunneling resistance and the resistance of the substrate.

5. The test method according to claim 1, characterized in that, The detection system, which controls multiple detection methods, detects the prefabricated battery to obtain multiple detection resistors that correspond one-to-one with multiple preset relationships, including: When the structural information includes the first doped layer and the second doped layer located on both sides of the preformed battery, respectively, the first detection system is controlled to use a first detection method to detect the second doped layer to obtain a first sub-detection resistance, or the second detection system is controlled to use a second detection method to detect the second doped layer to obtain a second detection resistance. The first detection method has a corresponding fourth preset relationship, which includes a first sub-preset relationship and a second sub-preset relationship. The first sub-preset relationship includes the relationship between the first sub-detection resistance and the resistance of the second doped layer. The second sub-preset relationship includes the relationship between the second sub-detection resistance, the resistance of the first doped layer, the tunneling resistance, and the resistance of the substrate. The second detection method has a corresponding fifth preset relationship, which includes the relationship between the second detection resistance, the resistance of the second doped layer, and the resistance of the first doped layer. The control system uses a third detection method to detect the pre-fabricated battery to obtain a third detection resistance. The third detection method has a corresponding sixth preset relationship, which includes the relationship between the third detection resistance, the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate. The first detection system is controlled to use the first detection method to detect the first doped layer and the substrate to obtain the second sub-detection resistor.

6. The test method according to claim 3, characterized in that, The step of determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer based on the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance includes: When the second detection system is controlled to use the second detection method to detect the first doped layer and the substrate, the resistance of the first doped layer is determined according to the second detection resistance and the second preset relationship. When the third detection system is controlled to use the third detection method to detect the first doped layer and the substrate, the resistance of the first doped layer is determined according to the third detection resistance and the third preset relationship; The tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined based on the resistance of the first doped layer, the first detection resistance, and the first preset relationship.

7. The test method according to claim 4, characterized in that, The step of determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer based on the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance includes: The resistance of the first doped layer is determined based on the second detection resistor and the second preset relationship; The tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined based on the resistance of the first doped layer, the first detection resistance, and the first preset relationship.

8. The test method according to claim 5, characterized in that, The step of determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer based on the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance includes: When the first detection system uses the first detection method to detect the second doped layer and obtains the first detection resistance, the resistance of the first doped layer is determined according to the first sub-detection resistance, the third detection resistance, the first sub-preset relationship and the sixth preset relationship. When the second detection system uses the second detection method to detect the second doped layer and obtains the second detection resistance, the resistance of the first doped layer is determined according to the second detection resistance, the third detection resistance, the fifth preset relationship and the sixth preset relationship. Based on the resistance of the first doped layer, the second sub-detection resistance, and the second sub-preset relationship, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined.

9. A testing device, characterized in that, include: The control module controls a detection system corresponding to multiple detection methods to detect the prefabricated battery, obtaining multiple detection resistors that correspond one-to-one with multiple preset relationships. The structural information of the prefabricated battery includes one of the following: the film layers located on both sides of the prefabricated battery are a first doped layer and a substrate, respectively; and the film layers located on both sides of the prefabricated battery are a first doped layer and a second doped layer, respectively. The first doped layer is located on the side of the tunneling passivation layer in the prefabricated battery that faces away from the substrate, and the second doped layer is located on the side of the substrate that faces away from the tunneling passivation layer. The first doped layer and the second doped layer have different polarities, and the doping polarity of the first doped layer is the same as that of the substrate. The detection resistors satisfy a preset relationship with at least one of the following target resistors: the resistance of the first doped layer, the resistance of the second doped layer, and the resistance of the substrate. The first determining module is used to determine the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer based on the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, wherein the preset resistance includes the resistance of the substrate.

10. The testing apparatus according to claim 9, characterized in that, Also includes: The acquisition module is used to acquire the structural information of the prefabricated battery. The second determining module is used to determine multiple detection methods and multiple preset relationships corresponding to the multiple detection methods based on the structural information.

11. A computer-readable storage medium, characterized in that, The computer-readable storage medium includes a stored program, wherein, when the program is executed, it controls the device on which the computer-readable storage medium is located to perform the test method of any one of claims 1 to 8.

12. An electronic device, characterized in that, include: One or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include a test method for performing any one of claims 1 to 8.

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