Semiconductor device and method for manufacturing semiconductor device

Abstract

The invention relates to a semiconductor device and a manufacturing method of the semiconductor device. The purpose of the present invention is to provide a technique capable of determining whether a wire is about to break. The semiconductor device includes a semiconductor element, a terminal, a main wire electrically connected between the semiconductor element and the terminal, a dummy wire, and a sealing resin. The two ends of the dummy wire are connected to the parts connected with the two ends of the main wire, and the tensile strength of the dummy wire is lower than the tensile strength of the main wire. The packaging resin covers the semiconductor element, the main wire and the dummy wire.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background Art

[0002] Various techniques have been proposed for detecting the state of a lead wire of a semiconductor device such as a power semiconductor device. For example, Patent Document 1 discloses a technique for detecting the connection strength between a lead wire of a dummy wiring and a terminal in order to prevent peeling due to aging.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2005-286009

[0004] In the molding process of molding the encapsulation resin in the manufacturing process of semiconductor devices, if the molten high-viscosity molding resin is injected into the mold, the wire connected to the terminal or the like may be subjected to viscosity resistance, causing the wire to be about to break. However, after the molding process, it is impossible to visually confirm the wire covered by the encapsulation resin, so there is a problem that it is difficult to judge whether the wire is about to break. Summary of the invention

[0005] Therefore, the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a technology capable of determining whether a wire is about to break.

[0006] The semiconductor device involved in the present invention comprises: a semiconductor element; a terminal; a main conductor, which is electrically connected between the semiconductor element and the terminal; a dummy conductor, whose two ends are connected to the parts connected to the two ends of the main conductor, and the tensile strength of the dummy conductor itself is lower than the tensile strength of the main conductor itself; and a packaging resin, which covers the semiconductor element, the main conductor and the dummy conductor.

[0007] Effects of the Invention

[0008] According to the present invention, a dummy conductor is provided, and the tensile strength of the dummy conductor itself is lower than the tensile strength of the main conductor itself. According to such a structure, it is possible to judge whether the conductor is about to break. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a plan view showing the structure of the semiconductor device according to the first embodiment.

[0010] Figure 2 This is a circuit diagram showing the structure of the semiconductor device according to the first embodiment.

[0011] Figure 3 This is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment.

[0012] Figure 4 This is a plan view for explaining the inspection process involved in the first embodiment.

[0013] Figure 5 This is a diagram for explaining the inspection process involved in the first embodiment.

[0014] Figure 6 It is a plan view showing the structure of a semiconductor device according to the second embodiment. DETAILED DESCRIPTION

[0015] Below, while referring to the attached Figure 1 The embodiments are described in detail below. The features described in the following embodiments are illustrative, and not all features are required. In addition, in the description shown below, the same or similar reference numerals are used to mark the same structural elements in multiple embodiments, and mainly different structural elements are described. In addition, in the description recorded below, specific positions and directions such as "upper", "lower", "left", "right", "front" or "back" are not necessarily consistent with the positions and directions during actual implementation.

[0016] <Implementation method 1>

[0017] Figure 1 is a plan view showing the structure of the semiconductor device according to the first embodiment. Figure 2 is a circuit diagram showing the structure. The semiconductor device according to the first embodiment is as follows Figure 1 The device shown includes a semiconductor switch element 1 as a semiconductor element, a diode 2, a control IC (Integrated Circuit) 3, a control wire 4, a lead frame 5, a main wire 6, a dummy wire 7, a heat sink (not shown), and a packaging resin 8 as a molding resin.

[0018] The semiconductor switch element 1, the diode 2, and the control IC 3 are composed of a semiconductor chip. The semiconductor chip can be composed of, for example, ordinary silicon (Si), or a wide bandgap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or diamond. When the semiconductor chip is composed of a wide bandgap semiconductor, stable operation of the semiconductor chip at high temperature and high voltage and high switching speed can be achieved.

[0019] The semiconductor switch element 1 has a control terminal (not shown) and turns on or off the power between the two ends of the semiconductor switch element 1 based on a control signal input to the control terminal. The semiconductor switch element 1 includes, for example, at least any one of an IGBT (Insulated Gate Bipolar Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In addition, in this specification, for example, at least any one of A, B, C, ..., and Z refers to any one of all combinations selected from the group of A, B, C, ..., and Z that is greater than or equal to one.

[0020] like Figure 2 As shown, the diode 2 is connected in parallel with the semiconductor switch element 1. The diode 2 includes, for example, at least one of an SBD (Schottky Barrier Diode) and a PND (PN junction diode). In addition, the diode 2 may be provided together with the semiconductor switch element 1 in one semiconductor chip, such as an RC-IGBT (Reverse Conducting-IGBT). Figure 1 , a structure in which the semiconductor switch element 1 and the diode 2 are provided in one semiconductor chip is shown, and the following description will be mainly based on this structure as an example.

[0021] The control IC 3 generates a control signal for controlling energization of the semiconductor switch element 1. The details of the control IC 3 will be described later.

[0022] The control wire 4 electrically connects the semiconductor switch element 1 and the control IC 3 , and transmits a control signal for controlling energization of the semiconductor switch element 1 from the control IC 3 to a control terminal of the semiconductor switch element 1 .

[0023] The lead frame 5, together with the control wires 4 and the main wires 6, constitute wiring inside the sealing resin 8. The lead frame 5 is a conductive material and includes a plurality of parts obtained by dividing a conductive member such as a metal plate by punching or the like in accordance with the circuit structure.

[0024] At least one of the semiconductor chips of the semiconductor switch element 1 and the diode 2 and the semiconductor chip of the control IC 3 is mounted on the lead frame 5 and joined by a joining member such as solder and resin. The portion of the lead frame 5 to which the semiconductor switch element 1 is joined is used as a die pad 5a, and the portion outside the package resin 8 is used as terminals 5b to 5e. In addition, the die pad 5a to which the semiconductor chip is joined may be provided with a structure for preventing the joining member from excessively spreading so as to surround the semiconductor chip.

[0025] The semiconductor device according to the first embodiment is a semiconductor device having three phases, namely, a U phase, a V phase, and a W phase. Therefore, the die pad 5 a includes a U-phase die pad, a V-phase die pad, a W-phase die pad, and a P-side die pad.

[0026] The U-phase die pad is connected to the terminal 5b as the U terminal, the V-phase die pad is connected to the terminal 5b as the V terminal, the W-phase die pad is connected to the terminal 5b as the W terminal, and the P-side die pad is connected to the terminal 5c as the P terminal. One semiconductor switch element 1 is mounted on each of the U-phase, V-phase, and W-phase die pads, and three semiconductor switch elements 1 are mounted in parallel on the P-side die pad.

[0027] The main conductor 6 is electrically connected between any one of the three semiconductor switch elements 1 mounted on the P-side die pad and any one of the U terminal, V terminal and W terminal (terminal 5b). In addition, another main conductor 6 is electrically connected between one semiconductor switch element 1 mounted on any one of the U-phase, V-phase and W-phase die pads and any one of the NU terminal, NV terminal and NW terminal (terminal 5d).

[0028] Both ends of the dummy wire 7 are connected to the portions connected to both ends of the main wire 6, and the dummy wire 7 is arranged in parallel with the main wire 6. Figure 1 In the figure, the dummy conductor 7 is shown by a thin line, but in Figure 2 In FIG. 1 , the portion corresponding to the dummy wire 7 is shown by a thick line.

[0029] The tensile strength of the dummy wire 7 itself is lower than that of the main wire 6. Therefore, when the molten high viscosity encapsulation resin 8 is injected into the mold during the molding process, the dummy wire 7 is more likely to break than the main wire 6 due to the viscosity resistance of the encapsulation resin 8.

[0030] In order to make the tensile strength of the dummy wire 7 lower than that of the main wire 6, the dummy wire 7 may be different from the main wire 6 in diameter, height, length, and material. For example, when the diameter of the dummy wire 7 is smaller than that of the main wire 6 and the height, length, and material of these wires are the same, the tensile strength of the dummy wire 7 is lower than that of the main wire 6.

[0031] The bending strength of the dummy wire 7 itself may also be made lower than the bending strength of the main wire 6 itself. In addition, the mechanical strength such as the tensile strength and bending strength of the wire itself is different from the strength determined not only by the wire but also by the components other than the wire, such as the connection strength between the wire and the components other than the wire (for example, the semiconductor switch element 1 or the terminal 5b). In addition, the smaller the diameter of the wire, the lower the tensile strength of the wire, but the two are different from the viewpoint that the connection strength between the wire and the components other than the wire becomes higher.

[0032] In addition, the distance of the dummy wire 7 from the injection port of the molten encapsulation resin 8 and the angle of the extending direction of the dummy wire 7 from the flow direction of the molten encapsulation resin 8 may be set in consideration of the ease of breaking of the dummy wire 7 relative to the molten encapsulation resin 8 in the molding process. The position of the injection port of the molten encapsulation resin 8 corresponds to Figure 1 The completed encapsulating resin 8 has a position of a convex-shaped resin injection mark 8a.

[0033] It is preferred that the dummy wire 7 be arranged as close as possible to the injection port (i.e., the resin injection mark 8a) of the molten encapsulating resin 8. Figure 1 In the example of FIG. 8 , the dummy conductor 7 is arranged in parallel with the main conductor 6 closest to the resin injection mark 8 a. However, the position of the dummy conductor 7 is not limited thereto, and the dummy conductor 7 may be arranged in parallel with other main conductors 6 .

[0034] In addition, it is preferable that the dummy wire 7 is provided at a portion that does not affect the operation of the semiconductor device. Figure 1 As shown, in the structure where the dummy wire 7 and the main wire 6 are connected in parallel, even if the dummy wire 7 is broken and contacts the main wire 6, the main wire 6 and the dummy wire 7 are originally electrically connected, so the circuit function can be substantially maintained.

[0035] In this embodiment 1, if Figure 1 and Figure 2 As shown, the control IC 3 includes a high voltage HVIC 3a and a low voltage LVIC 3b. The HVIC 3a and LVIC 3b each receive signals from the outside of the semiconductor device or send internal information to the outside. The HVIC 3a or LVIC 3b sends and receives signals to and from the outside via the terminal 5e.

[0036] The plurality of terminals 5e are electrically independent of each other, and the terminals 5e are electrically connected to the HVIC 3a or LVIC 3b via the lead frame 5 and wires (not shown). Figure 1 As shown, the control terminal such as the terminal 5e may be provided on the opposite side to the power terminals such as the terminals 5b to 5d with respect to the semiconductor switch element 1. With such a configuration, the distance between the terminals and the insulation can be easily ensured.

[0037] The conduction of the semiconductor switch element 1 mounted on the P-side die pad is controlled based on a control signal transmitted from the HVIC 3a to the semiconductor switch element 1 through the control wire 4. The conduction of the semiconductor switch element 1 mounted on any of the U-phase, V-phase, and W-phase die pads is controlled based on a control signal transmitted from the LVIC 3b to the semiconductor switch element 1 through the control wire 4.

[0038] In addition, usually, the current flowing through the control wire 4 is smaller than the current flowing through the main wire 6. Therefore, the diameter of the control wire 4 of the HVIC 3a and the LVIC 3b may be smaller than the main wire 6. According to such a structure, a low-cost wire can be used for the control wire 4. In addition, the diameter of the control wire 4 may be larger than the dummy wire 7. According to such a structure, when a molten high-viscosity encapsulation resin is injected into the mold in the molding process, it is possible to suppress the control wire 4 from being broken due to viscosity resistance.

[0039] The heat sink (not shown) is a heat conducting member for dissipating the heat of the semiconductor switch element 1 to the outside of the sealing resin 8 .

[0040] The encapsulation resin 8 has insulating properties and encapsulates the semiconductor switch element 1, the control IC 3, the control wire 4, the portion of the lead frame 5 excluding the terminals 5b to 5e, the main wire 6, the dummy wire 7, and the heat sink. The terminals 5b to 5e are exposed from the encapsulation resin 8, so that the semiconductor device can be electrically connected to the outside.

[0041] <Manufacturing method>

[0042] Figure 3 1 is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 3 In the preparatory process before the manufacturing process, a conductive member such as a metal plate is punched to produce the lead frame 5. In addition, at this point in time, the plurality of components of the lead frame 5 are integrated by connecting rods and a frame.

[0043] In the power chip bonding process of step S1, the semiconductor switch element 1 is bonded to the lead frame 5 by a bonding component. In the IC chip bonding process of step S2, the control IC 3 is bonded to the lead frame 5 by a bonding component. In the case where the diode 2 is not integrated with the semiconductor switch element 1, in the diode chip bonding process of step S3, the diode 2 is bonded to the lead frame 5 by a bonding component. In addition, the order of the processes of steps S1 to S3 can also be changed, and at least more than or equal to two processes of the processes of steps S1 to S3 can also be performed in parallel. For example, Figure 1 As shown, in a structure in which the semiconductor switch element 1 and the diode 2 are provided in one semiconductor chip, steps S1 and S3 are performed in parallel.

[0044] In the wire bonding process of step S4, the main wire 6 is electrically connected between the semiconductor switch element 1 and the terminals 5b and 5e, and both ends of the dummy wire 7 are connected to the portions connected to both ends of the main wire 6. In addition, the control wire 4 is electrically connected between the semiconductor switch element 1 and the control IC 3.

[0045] In the molding process of step S5, molten sealing resin 8 is injected into the space of the mold containing lead frame 5 and then cured. Thus, semiconductor switch element 1, control wire 4, main wire 6 and dummy wire 7 are covered with sealing resin 8.

[0046] In the tie bar cutting step of step S6, the terminals 5b to 5e and other components of the lead frame 5 are separated by cutting the tie bars and the frame outside the sealing resin 8. In the lead cutting and forming step of step S7, the terminals 5b to 5e are partially cut and bent.

[0047] In the inspection process of step S8, an electrical test is performed by the inspection device described later, and the wire is analyzed based on the result. Specifically, a current flows through the main wire 6 and the dummy wire 7, and the inspection device measures the voltage value or resistance value of the main wire 6 and the dummy wire 7. In addition, the following description is about the case of using the voltage value, but the voltage value and the resistance value are roughly proportional, so the description of the case of using the resistance value is the same as the description of the case of using the voltage value. The inspection device determines the fracture state of the main wire 6 and the fracture state of the dummy wire 7 based on the measurement results of the voltage values ​​of the main wire 6 and the dummy wire 7.

[0048] <Inspection process>

[0049] Next, the inspection process of step S8 will be described in detail. Figure 4 In the example, the path through which the current flows during the inspection process is shown by arrows. Figure 4 As shown, the inspection device 21 turns on the semiconductor switch element 1 connected to the dummy wire 7 and flows a current between the terminal 5 b and the terminal 5 c connected to the dummy wire 7 , thereby measuring the voltage values ​​of the main wire 6 and the dummy wire 7 .

[0050] Figure 5 is a histogram showing the relationship between the number of completed semiconductor devices and the voltage values ​​of the main wire 6 and the dummy wire 7. When the dummy wire 7 is about to break or has broken, the voltage values ​​of the main wire 6 and the dummy wire 7 are greater than Figure 5 Therefore, when the voltage values ​​of the main conductor 6 and the dummy conductor 7 are greater than the standard upper limit value, the inspection device 21 determines that the dummy conductor 7 is about to break or has broken. When the manufacturing operator receives such a determination result from the inspection device 21, it can be determined that there is a possibility that the main conductor 6 is about to break.

[0051] In addition, when the voltage values ​​of the main conductor 6 and the dummy conductor 7 are greater than other threshold values ​​greater than the standard upper limit value, the inspection device 21 determines that the main conductor 6 is about to break or has broken. When the manufacturing operator receives such a determination result from the inspection device 21, it can be determined that the main conductor 6 is in a state worse than the state of being about to break, that is, the main conductor 6 may be broken.

[0052] <Summary of Implementation Method 1>

[0053] According to the semiconductor device of the first embodiment as described above, the dummy wire 7 has a tensile strength lower than that of the main wire 6. According to such a structure, after the encapsulation resin 8 is formed, the broken state of the main wire 6 and the broken state of the dummy wire 7 can be determined based on the measurement results of the voltage value or resistance value of the main wire 6 and the dummy wire 7. According to such a structure, the manufacturing operator can easily determine whether the main wire 6 is about to break or whether the main wire 6 has broken due to the molding process or the like.

[0054] <Implementation method 2>

[0055] Figure 6 1 is a top view showing the structure of the semiconductor device according to the second embodiment. In the first embodiment, the dummy wire 7 is arranged in parallel with the main wire 6 and is electrically connected between the semiconductor switch element 1 and the terminal 5b. In contrast, in the second embodiment, the main wire 6 is electrically connected between the semiconductor switch element 1 and the terminal 5b as the first terminal, and the dummy wire 7 is electrically connected between the terminal 5c as the second terminal and the floating terminal 5f as the third terminal. In addition, the floating terminal 5f is a terminal having a floating potential independent of the circuit of the semiconductor device.

[0056] Next, the method for manufacturing a semiconductor device according to the second embodiment will be mainly described with respect to portions that are different from the method for manufacturing a semiconductor device according to the first embodiment.

[0057] In the wire bonding process of step S4 , the dummy wire 7 is electrically connected between the terminal 5 c and the floating terminal 5 f .

[0058] In the inspection process of step S8, the inspection device 21 measures the voltage value or resistance value of the main conductor 6 and the voltage value or resistance value of the dummy conductor 7. Figure 6 In the structure involved in the present second embodiment, the voltage value or resistance value of the main conductor 6 and the voltage value or resistance value of the dummy conductor 7 can be measured respectively. The inspection device 21 determines the fracture state of the dummy conductor 7 based on the measurement result of the voltage value or resistance value of the dummy conductor 7, and determines the fracture state of the main conductor 6 based on the measurement result of the voltage value or resistance value of the main conductor 6.

[0059] <Summary of Implementation Method 2>

[0060] According to the semiconductor device of the second embodiment described above, as in the first embodiment, the manufacturing operator can easily determine whether the main conductor 6 is about to break or has already broken due to the molding process, etc. In addition, since the dummy conductor 7 is electrically connected to the floating terminal 5f, the circuit structure can be prevented from being complicated.

[0061] In the above description, the first terminal is the terminal 5b, the second terminal is the terminal 5c, and the third terminal is the floating terminal 5f, but the present invention is not limited thereto. For example, both the second terminal and the third terminal may be floating terminals. In addition, as long as the potential of the second terminal is the same as the potential of the third terminal, for example, the second terminal and the third terminal may be the same terminal.

[0062] <Modification>

[0063] In the above description, the lead frame 5 is used as the die pad 5a, but the present invention is not limited thereto. For example, although not shown in the figure, an insulating substrate having a conductive circuit pattern provided on one surface may be used as the die pad instead of the lead frame 5. In addition, in such a structure, the circuit pattern that is not electrically connected to the semiconductor switch element 1 may be connected to the wire or terminal by ultrasonic wave or by solder.

[0064] In addition, the embodiments and the modifications can be freely combined, or the embodiments and the modifications can be appropriately modified or omitted.

[0065] Hereinafter, each aspect of the present invention will be described collectively as supplementary notes.

[0066] (Note 1)

[0067] A semiconductor device comprising:

[0068] Semiconductor components;

[0069] terminal;

[0070] a main conductor electrically connected between the semiconductor element and the terminal;

[0071] a dummy wire, both ends of which are connected to the portions connected to both ends of the main wire, wherein the tensile strength of the dummy wire itself is lower than the tensile strength of the main wire itself; and

[0072] The encapsulation resin covers the semiconductor element, the main wire and the dummy wire.

[0073] (Note 2)

[0074] A semiconductor device comprising:

[0075] Semiconductor components;

[0076] A first terminal, a second terminal and a third terminal;

[0077] A main conductor electrically connected between the semiconductor element and the first terminal;

[0078] a dummy wire electrically connected between the second terminal and the third terminal, wherein the tensile strength of the dummy wire itself is lower than the tensile strength of the main wire itself; and

[0079] The encapsulation resin covers the semiconductor element, the main wire and the dummy wire.

[0080] (Note 3)

[0081] A semiconductor device according to Appendix 1 or 2, wherein:

[0082] A control wire is also provided, which transmits a control signal for controlling the energization of the semiconductor element and has a smaller diameter than the main wire.

[0083] (Note 4)

[0084] A semiconductor device according to Appendix 3, wherein:

[0085] The control wire has a diameter greater than that of the dummy wire.

[0086] (Note 5)

[0087] A method for manufacturing a semiconductor device comprises the following steps:

[0088] electrically connecting the main conductor between the semiconductor element and the terminal;

[0089] Connecting two ends of a dummy wire at the portion connected to the two ends of the main wire, wherein the tensile strength of the dummy wire itself is lower than the tensile strength of the main wire itself;

[0090] Covering the semiconductor element, the main wire and the dummy wire with a packaging resin; and

[0091] The broken state of the dummy conductive wire is determined based on the measurement results of the voltage values ​​or the resistance values ​​of the main conductive wire and the dummy conductive wire.

[0092] (Note 6)

[0093] A method for manufacturing a semiconductor device according to Supplementary Note 5, wherein:

[0094] The method further includes a step of determining a rupture state of the main conductor based on the measurement result.

[0095] (Note 7)

[0096] A method for manufacturing a semiconductor device comprises the following steps:

[0097] electrically connecting a main conductor between the semiconductor element and the first terminal;

[0098] A dummy wire is electrically connected between the second terminal and the third terminal, wherein the tensile strength of the dummy wire is lower than the tensile strength of the main wire;

[0099] Covering the semiconductor element, the main wire and the dummy wire with a packaging resin; and

[0100] The rupture state of the dummy wire is determined based on the measurement result of the voltage value or the resistance value of the dummy wire.

[0101] (Note 8)

[0102] A method for manufacturing a semiconductor device according to Supplementary Note 7, wherein:

[0103] The method further includes a step of determining a broken state of the main conductor based on a measurement result of a voltage value or a resistance value of the main conductor.

[0104] Description of the label

[0105] 1 semiconductor switch element, 4 control wire, 5b to 5e terminals, 5f floating terminal, 6 main wire, 7 dummy wire, 8 packaging resin.

Claims

1. A semiconductor device comprising: Semiconductor components; terminal; a main conductor electrically connected between the semiconductor element and the terminal; A dummy wire, both ends of which are connected to the parts connected to both ends of the main wire, and the tensile strength of the dummy wire itself is lower than the tensile strength of the main wire itself; as well as The encapsulation resin covers the semiconductor element, the main wire and the dummy wire.

2. The semiconductor device according to claim 1, wherein A control wire is also provided, which transmits a control signal for controlling the energization of the semiconductor element and has a smaller diameter than the main wire.

3. The semiconductor device according to claim 2, wherein: The control wire has a diameter greater than that of the dummy wire.

4. A semiconductor device comprising: Semiconductor components; A first terminal, a second terminal and a third terminal; A main conductor electrically connected between the semiconductor element and the first terminal; a dummy wire electrically connected between the second terminal and the third terminal, wherein the tensile strength of the dummy wire itself is lower than the tensile strength of the main wire itself; and The encapsulation resin covers the semiconductor element, the main wire and the dummy wire.

5. The semiconductor device according to claim 4, wherein: A control wire is also provided, which transmits a control signal for controlling the energization of the semiconductor element and has a smaller diameter than the main wire.

6. The semiconductor device according to claim 5, wherein: The control wire has a diameter greater than that of the dummy wire.

7. A method for manufacturing a semiconductor device, comprising the following steps: electrically connecting the main conductor between the semiconductor element and the terminal; Connecting two ends of a dummy wire at the portion connected to the two ends of the main wire, wherein the tensile strength of the dummy wire itself is lower than the tensile strength of the main wire itself; Covering the semiconductor element, the main wire and the dummy wire with a packaging resin; as well as The broken state of the dummy conductive wire is determined based on the measurement results of the voltage values ​​or the resistance values ​​of the main conductive wire and the dummy conductive wire.

8. The method for manufacturing a semiconductor device according to claim 7, wherein: The method further includes a step of determining a rupture state of the main conductor based on the measurement result.

9. A method for manufacturing a semiconductor device, comprising the following steps: electrically connecting a main conductor between the semiconductor element and the first terminal; A dummy wire is electrically connected between the second terminal and the third terminal, wherein the tensile strength of the dummy wire is lower than the tensile strength of the main wire; Covering the semiconductor element, the main wire and the dummy wire with a packaging resin; as well as The rupture state of the dummy wire is determined based on the measurement result of the voltage value or the resistance value of the dummy wire.

10. The method for manufacturing a semiconductor device according to claim 9, wherein: The method further includes a step of determining a broken state of the main conductor based on a measurement result of a voltage value or a resistance value of the main conductor.

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