Lighting module

Abstract

A lighting module according to an embodiment of the present invention may include: a substrate; a plurality of light emitting devices disposed on the substrate; a resin layer disposed on the substrate and the light emitting device; a phosphor layer disposed on the resin layer; and a recess vertically overlapping with the light emitting device, in which an upper surface area of the recess occupies 50% to 150% of an upper surface area of the light emitting device, and the recess is formed concavely from an upper surface of the resin layer toward a direction of the light emitting device, and has an inclined side surface lower than the upper surface of the resin layer.

Description

[0001] This case is a divisional application, and its parent case is a patent application with an application date of June 4, 2019, application number 201980041684.0, and invention name “Lighting Module”. Technical Field

[0002] The present invention relates to a lighting module having a light emitting device, a lighting module providing a surface light source, and a lighting unit or a vehicle lamp having the lighting module. Background Art

[0003] Typical lighting applications include vehicle lighting and backlighting of displays and signs. Compared with conventional light sources such as fluorescent lamps and incandescent lamps, light-emitting devices such as light-emitting diodes (LEDs) have advantages such as low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness. These light-emitting diodes are applied to various display devices, various lighting devices such as indoor or outdoor lamps. Recently, lamps using light-emitting diodes have been proposed as vehicle light sources. Compared with incandescent lamps, the advantage of light-emitting diodes is that the power consumption is small. However, since the emission angle of light emitted from light-emitting diodes is small, when light-emitting diodes are used as vehicle lights, it is necessary to increase the light-emitting area of ​​the lamp using light-emitting diodes. Light-emitting diodes can increase the design freedom of lamps due to their small size, and are more economical due to their semi-permanent service life. Summary of the invention

[0004] Technical issues

[0005] An embodiment of the present invention provides a lighting module that provides a surface light source. An embodiment of the present invention may provide a lighting module, which includes a plurality of light-emitting devices and a recessed portion for reflecting or diffusing light disposed on each light-emitting device. An embodiment of the present invention may provide a lighting module having a recessed portion that is recessed in the direction of the resin layer between a resin layer covering the light-emitting device and a phosphor layer. An embodiment of the present invention may provide a flexible lighting module having a plurality of light-emitting devices, a resin layer, and a phosphor layer on a substrate. An embodiment of the present invention provides a lighting module having improved light extraction efficiency and light distribution characteristics. An embodiment of the present invention provides a lighting module for irradiating a surface light source and a lighting device having the lighting module. An embodiment of the present invention may provide a lighting unit, a liquid crystal display device, or a vehicle lamp having a lighting module.

[0006] Technical Solution

[0007] According to an embodiment of the present invention, the lighting module includes: a substrate; a plurality of light-emitting devices arranged on the substrate; a resin layer arranged on the substrate and the light-emitting devices; a phosphor layer arranged on the resin layer; and a recessed portion overlapping the light-emitting devices in a vertical direction, wherein an area of ​​an upper surface of the recessed portion includes a range of 50% to 150% of an area of ​​an upper surface of the light-emitting devices, and the recessed portion can be formed to be recessed on the upper surface of the resin layer in the direction of the light-emitting devices, and can include an inclined side surface lower than the upper surface of the resin layer.

[0008] According to an embodiment of the present invention, the shortest distance between the recess and the light emitting device may be in the range of 3 to 5 times the thickness of the light emitting device. The angle between the side surface of the recess and the horizontal upper surface of the resin layer may be in the range of 30 to 50 degrees. The recess may have an inverted cone shape or an inverted polygonal pyramid shape. The recess may be filled with air or may include a material with a refractive index of 1. The recess includes a vertex as the lowest point of the inclined side surface, and the inner angle formed by one side and the other side of the recess based on the vertex may be in the range of 80 to 120 degrees. The phosphor layer may include a red phosphor, and at least one of the resin layer and the phosphor layer may include a diffuser. The edge of the upper surface of the recess and the edge of the upper surface of the light emitting device may extend in the same direction. It may include a light shielding portion or a phosphor portion disposed between the light emitting device and the resin layer. The reflective member is disposed between the substrate and the resin layer and disposed around the light emitting device, and the height of the reflective member may decrease from the central area to its edge. The lighting device according to an embodiment of the present invention may include one or more lighting modules.

[0009] Beneficial Effects

[0010] According to an embodiment of the present invention, in a lighting module, the light uniformity of a surface light source can be improved. In the lighting module, a conical recess is provided in an empty space on each light-emitting device so that incident light may be reflected or diffused. In the lighting module, hot spots on each light-emitting device can be reduced. In addition, by stacking a layer of resin material on the light-emitting device, a flexible lighting module can be realized. The light efficiency and light distribution characteristics of the lighting module can be improved. The optical reliability of the lighting module and the lighting device having the lighting module can be improved. The reliability of a vehicle lighting device having the lighting module can be improved. The embodiments of the present invention can be applied to a backlight unit having a lighting module, various display devices, a surface light source lighting device, or a vehicle lamp. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a plan view showing a lighting module according to an embodiment of the present invention;

[0012] Figure 2 yes Figure 1A cross-sectional view of the lighting module taken along the AA side;

[0013] Figure 3 yes Figure 2 A partial enlarged view of a lighting module;

[0014] Figure 4 It is shown Figure 3 A perspective view of an arrangement example of a light emitting device and a recess;

[0015] Figure 5 It is used to illustrate Figure 1 A diagram showing an example of arrangement of a light emitting device and a recess;

[0016] Figure 6 It is shown Figure 1 A view of another example of a light emitting device and a recess in FIG.

[0017] Figures 7 to 9 is a diagram for explaining the relationship between changes in the shape of the concave portion of the light emitting device in the lighting module according to the embodiment of the present invention;

[0018] Fig.10 yes Figure 1 Another example of a lighting module;

[0019] Fig.11 yes Fig.10 A cross-sectional view of the BB side of the lighting module;

[0020] Fig.12 yes Fig.10 Examples of arrangements of light emitting devices and recesses of lighting modules;

[0021] Fig.13 yes Figure 2 Another example of a lighting module;

[0022] Fig.14 yes Figure 2 A first variation of the lighting module;

[0023] Fig.15 yes Figure 2 A second variation of the lighting module;

[0024] Fig.16 yes Figure 2 A third variation of the lighting module;

[0025] Fig.17 yes Fig.16 A partial enlarged view of a lighting module;

[0026] Fig.18 is a diagram showing a light path in a concave portion of a resin layer according to an embodiment of the present invention;

[0027] Fig.19 (a), 19(b) and 19(c) are examples of brightness distribution according to the size of the concave portion compared with the light emitting device according to the embodiment of the present invention;

[0028] Fig. 20 is an example of a light emitting device of a lighting module according to an embodiment of the present invention;

[0029] Fig.21 is a plan view of a vehicle to which a lamp having a lighting module according to an embodiment of the present invention is applied;

[0030] Fig. 22 2 is a diagram showing a lamp having a lighting module or a lighting device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0031] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein those skilled in the art to which the present invention belongs can easily implement the present invention. However, it should be understood that the embodiments described in the specification and the configurations shown in the accompanying drawings are only preferred embodiments of the present invention, and there are various equivalents and modifications that can replace the embodiments and configurations at the time of filing this application.

[0032] When describing in detail the operating principle of the preferred embodiment of the present invention, when the detailed description of the known function or configuration is considered to unnecessarily obscure the main idea of ​​the present disclosure, the detailed description will be omitted. The terms described below are defined as terms defined in consideration of the functions of the present invention, and the meaning of each term should be interpreted based on the content of the entire specification. Throughout the drawings, the same reference numerals are used for components with similar functions and actions.

[0033] The lighting device according to the present invention can be applied to various lamp devices that require lighting, such as vehicle lamps, household lighting devices, or industrial lighting devices. For example, when the lighting device is applied to vehicle lamps, it can be applied to headlamps, rearview mirror lamps, fog lamps, tail lamps, parking lamps, side marker lamps, daytime running lamps, vehicle interior lamps, door scarfs, rear combination lamps, reverse lamps, etc. The lighting device of the present invention can also be applied to the field of indoor and outdoor advertising equipment, and can also be applied to all other lighting-related fields and advertising-related fields that are currently being developed and commercialized or can be realized in the future through technological development.

[0034] Hereinafter, the embodiments will become apparent through the description of the accompanying drawings and embodiments. In the description of the embodiments, when each layer (film), region, pad or pattern is described as being formed "on" or "under" each layer (film), region, pad or pattern, "on" and "under" include both "directly" and "indirectly". In addition, the reference for determining "on" or "under" each layer will be described based on the accompanying drawings.

[0035] <Lighting Module>

[0036] Figure 1 is a plan view showing a lighting module according to an embodiment of the present invention, Figure 2 yes Figure 1 An example of a cross-sectional view of the AA side of the lighting module, Figure 3 yes Figure 2 A partial enlarged view of the lighting module. Figure 4 is a perspective view showing an arrangement example of a light emitting device and a recess, Figure 5 It is shown Figure 1 FIG. 1 is a diagram showing an example of arrangement of light emitting devices and recesses in FIG.

[0037] refer to Figures 1 to 5 , the lighting module 100 may include a substrate 11, a light emitting device 21 disposed on the substrate 11, and a resin layer 41 covering the light emitting device 21 on the substrate 11. The lighting module 100 may include a recess 61 overlapping the light emitting device 21 in a vertical direction. The light emitting module 100 may include a phosphor layer 51 on the resin layer 41. The light emitting module 100 may emit light emitted from the light emitting device 21 to a surface light source. The lighting module 100 may be a rigid module or a flexible module.

[0038] like Figure 1 As shown, in the lighting module 100, a plurality of light emitting devices 21 may be arranged as N (N is an integer greater than 2) in the first direction X and as M (M is an integer greater than 1) in the second direction. A plurality of light emitting devices 21 may be arranged in a linear shape or in a matrix shape having N×M. The lighting module 100 may be applied to various lamp devices that require lighting, such as vehicle lamps, household lighting devices, and industrial lighting devices. For example, in the case where the lighting module is applied to vehicle lamps, it may be applied to headlamps, vehicle position lamps, rearview mirror lamps, fog lamps, tail lamps, turn signal lamps, reversing lamps and parking lamps, daytime running lamps, vehicle interior lamps, door sill trims, rear combination lamps, and reversing lamps, etc. The lighting module 100 may be provided as a flexible module in the form of being assembled to a bracket or housing having an inclined or curved surface. The lighting module 100 may emit at least one of green, blue, yellow, white, or red light. For example, the lighting module 100 may emit at least one of red light and yellow light.

[0039] The substrate 11 includes a printed circuit board (PCB), for example, a resin-based printed circuit board (PCB), a metal core PCB, a flexible PCB, and a ceramic PCB, and an FR-4 substrate. The substrate 11 may include a flexible PCB, for example. The upper surface of the substrate 11 has an XY axis plane, and the thickness of the substrate 11 may be a height in the Z direction orthogonal to the X and Y directions. Here, the X direction may be a first direction, the Y direction may be a second direction orthogonal to the X direction, and the Z direction may be a third direction orthogonal to the X direction and the Y direction. The length of the substrate 11 in the X direction and the length in the Y direction may be the same or different from each other. The thickness of the substrate 11 may be 0.5 mm or less, for example, in the range of 0.3 mm to 0.5 mm. Since the thickness of the substrate 11 is set to be thin, the thickness of the lighting module will not be increased. The thickness t1 of the lighting module 100 may be 5 mm or less from the bottom of the substrate 11, for example, 3 mm to 5 mm or 3 mm to 4.5 mm. The thickness t1 of the lighting module 100 may be a linear distance between the lower surface of the substrate 11 and the upper surface of the phosphor layer 51. The thickness t1 of the lighting module 100 may be less than 200% of the thickness t2 of the resin layer 41 , for example, in the range of 150% to 200%.

[0040] The substrate 11 may include a wiring layer (not shown) thereon, and the wiring layer may be electrically connected to the light emitting device 21. A plurality of light emitting devices 21 may be connected in series, in parallel, or in series-parallel through the wiring layer of the substrate 11. The substrate 11 may be used as a base member or a support member located below the light emitting device 21 and the resin layer 41. When the thickness t1 of the lighting module 100 is thinner than the above range, the light diffusion space may be reduced and hot spots may occur, and when it is greater than the thickness range, the spatial installation restrictions and the degree of freedom of design may be reduced due to the thickness of the module. An embodiment of the present invention may have a lighting module 100 with a thin thickness t1, for example, less than 5 mm or less than 4 mm, and provide a uniform brightness distribution.

[0041] A connector may be provided in a portion of the substrate 11 to supply power to the light emitting device 21. The area on the substrate 11 where the connector is provided may be an area where the resin layer is not formed. The top view shape of the substrate 11 may be a rectangle, a square, or other polygons. The substrate 11 may be a strip having a long linear shape or a curved shape in one direction. The substrate 11 may include a protective layer or a reflective layer thereon. The protective layer or the reflective layer may include a member having a solder resist material, and the solder resist material is a white material and may reflect incident light.

[0042] The light emitting device 21 is disposed on the substrate 11 and may be sealed with a resin layer 41. The light emitting device 21 emits light through the resin layer 41. The resin layer 41 may be in contact with a surface of the light emitting device 21. Figure 4As shown, each light emitting device 21 has a plurality of side surfaces s1 and an upper surface s2, and the upper surface s2 may face the upper surface of the resin layer 41. The light emitting device 21 may emit light through the plurality of side surfaces s1. The plurality of side surfaces s1 and the upper surface s2 of the light emitting device 21 emit light through the resin layer 41. When the phosphor layer 51 is disposed on the resin layer 41, the light passing through the resin layer 41 may be converted in wavelength by the phosphor layer 51 and then emitted. The light emitting device 21 is an LED chip that emits light on at least five surfaces, and may be disposed on the substrate 11 in a flip chip form. As another example, the light emitting device 21 may include a horizontal type LED chip or a vertical type LED chip. When the light emitting device 21 is a horizontal chip or a vertical chip, the chip is connected to another chip or a wiring pattern by a wire, and the thickness of the resin layer may increase due to the height of the wiring. In addition, since a connection space that varies according to the length of the wire is required, the interval between the light emitting devices 21 may be increased. As another example, the light emitting device 21 may be provided as a package having an LED chip.

[0043] The light emitting device 21 may be formed to have a thickness t0 ( Figure 3 ). In the light-emitting device 21 according to the embodiment of the present invention, due to the five-sided light emission, the distribution of the orientation angle can be increased. The spacing a1 between the light-emitting devices 21 can be equal to or greater than the thickness t2 (t2=a1) of the resin layer 41, for example, more than 2.5 mm, and can vary according to the size of the LED chip. It can be seen that the light-emitting device 21 disclosed in the embodiment of the present invention is configured as an LED chip that emits light on at least five surfaces, thereby further improving the brightness distribution and the distribution of the orientation angle. When the light-emitting devices 21 are arranged in an N×M matrix on the substrate 11, N can be 1 or more than 2, and M can be more than 2. The light-emitting devices 21 can be arranged along the first direction X and the second direction Y, respectively.

[0044] The light emitting device 21 is a light emitting diode (LED) chip, and can emit at least one of blue, red, green, ultraviolet light (UV) and infrared light. The light emitting device 21 can, for example, emit at least one of blue, red and green. The light emitting device 21 can be electrically connected to the substrate 11. The light emitting device 21 can, for example, emit blue light in the range of 420nm to 470nm. A plurality of light emitting devices 21 can emit light of the same wavelength or different wavelengths. For example, light of different wavelengths in the range of 420nm to 470nm and in the range of 619nm to 710nm can be emitted. The light emitting device 21 can be sealed with a transparent insulating layer or a resin material layer on the surface. The light emitting device 21 can have a phosphor layer containing a phosphor on its surface. The light emitting device 21 can have a supporting member having a ceramic supporting member or a metal plate disposed thereunder, and the supporting member can be used as a conductive and thermal conductive member.

[0045] The resin layer 41 may be disposed on the substrate 11. The resin layer 41 seals the light emitting device 21 on the substrate 11. The resin layer 41 may be adhered to the upper surface of the substrate 11. The resin layer 41 may be adhered to the upper surface of the substrate 11 using an adhesive, or the resin layer 41 may be directly adhered to the upper surface of the substrate 11. For example, the resin layer 41 may be formed on the substrate 11 by transfer molding.

[0046] According to an embodiment of the present invention, a plurality of layers are stacked on the light emitting device 21, and the plurality of layers may include, for example, two or more layers or three or more layers. The plurality of layers may selectively include at least two or more layers of an impurity-free layer, a layer with a phosphor added, a layer based on a diffusor, and a layer with a phosphor / diffusor added. At least one of the plurality of layers may selectively include a diffusor and a phosphor. That is, the phosphor and the diffusor may be arranged in separate layers, respectively, or may be mixed with each other and arranged in one layer. The impurities may be phosphors and diffusors. The layers provided with the phosphor and the diffusor may be arranged adjacent to each other or may be spaced apart from each other. When the layer with the phosphor and the layer with the diffusor are separated from each other, the layer provided with the phosphor may be arranged above the layer provided with the diffusor. The phosphor may include at least one of a blue phosphor, a green phosphor, a red phosphor, and a yellow phosphor. The size of the phosphor may be in the range of 1 μm to 100 μm. The higher the density of the phosphor, the higher the wavelength conversion efficiency may be, but since the luminous intensity may be reduced, a phosphor within the above size may be added in consideration of the light efficiency. The diffusant may include at least one of PMMA (polymethyl methacrylate), TiO2, SiO2, Al2O3, and silicon. The refractive index of the diffusant at the emission wavelength may be in the range of 1.4 to 2, and its size may be in the range of 1 μm to 100 μm. The diffusant may have a spherical shape, but is not limited thereto. The plurality of layers may include a resin material. The plurality of layers may have the same refractive index, at least two layers may have the same refractive index, or the layers adjacent to the uppermost layer may gradually reduce the refractive index.

[0047] like Figure 2 and Figure 3As shown, the thickness t2 of the resin layer 41 may be thicker than the thickness t0 of the light emitting device 21. The thickness t2 of the resin layer 41 may be thicker than the thickness of the substrate 11, and the thickness t2 of the resin layer 41 may be more than 3 times the thickness of the substrate 11, for example, in the range of 3 to 8 times. Since the resin layer 41 is set to the thickness t2, the light emitting device 21 can be sealed on the substrate 11, moisture penetration can be prevented, and the substrate 11 can be supported. The resin layer 41 and the substrate 11 may be formed of a flexible board. The thickness t2 of the resin layer 41 may be less than 5 mm, for example, in the range of 3 mm to 4.9 mm or in the range of 2.5 mm to 4 mm. The thickness t2 of the resin layer 41 may be thicker than the thickness t3 of the phosphor layer 51, and may be thicker than the thickness of the substrate 11. For example, the thickness t2 of the resin layer 41 may be less than 5 mm, for example, below 4 mm, and may be thicker than the sum of the thickness t3 of the phosphor layer 51 and the thickness of the substrate 11.

[0048] The resin layer 41 may be a transparent resin material, for example, a resin material such as a UV (ultraviolet) resin, a silicone resin or an epoxy resin. The resin layer 41 may be a transparent resin material, for example, a resin material such as a UV (ultraviolet) resin, an epoxy resin or a silicone resin. The refractive index of the resin layer 41 may be less than 1.8, for example, 1.1 to 1.8 or 1.4 to 1.6, and may be lower than the refractive index of the diffusant. The UV resin may be, for example, a resin (oligomer type) containing a urethane acrylate oligomer as a main material. For example, a synthetic oligomer urethane acrylate oligomer may be used. The main material may further include a monomer, in which isobornyl acrylate (IBOA), hydroxybutyl acrylate (HBA) and hydroxymethyl ethyl acrylate (HEMA) as low-boiling diluent reactive monomers are mixed, and a photoinitiator (for example, 1-hydroxycyclohexyl phenyl ketone, diphenyl), diphenyl (2,4,6-trimethylbenzoylphosphine oxide), an antioxidant, etc. may be mixed as an additive. The UV resin may be formed from a composition comprising 10% to 21% of an oligomer, 30% to 63% of a monomer, and 1.5% to 6% of an additive. In this case, the monomer may be a mixture of 10% to 21% of isobornyl acrylate (IBOA), 10% to 21% of hydroxybutyl acrylate (HBA), and 10% to 21% of hydroxymethylethyl acrylate (HEMA). The additive may be added with a photoinitiator in an amount of 1% to 5% to be able to initiate photoreactivity, and the additive may be formed from a mixture that can improve yellowing by adding 0.5% to 1% of an antioxidant. The resin layer formed using the above composition may be formed with a resin such as a UV resin instead of a light guide plate to adjust the refractive index and thickness, and by using the above composition, the bonding properties, reliability, and mass production rate are all met.

[0049] The phosphor layer 51 may be disposed on the resin layer 41. The phosphor layer 51 may be disposed on the upper surface of the resin layer 41. The side 51a of the phosphor layer 51 may be disposed on the outer side of the resin layer 41. The side 51a of the phosphor layer 51 may be disposed on all sides of the resin layer 41. The side 51a of the phosphor layer 51 may be adhered to the upper surface of the substrate 11. 51a of the phosphor layer 51 extends to the outer side of the resin layer 41 and contacts the upper surface of the substrate 11, thereby preventing moisture from penetrating. The side 51a of the phosphor layer 51 may emit wavelength-converted light. The phosphor layer 51 may include the same phosphor or different phosphors in the upper region disposed on the upper surface of the resin layer 41 and in the region of the side 51a. For example, a first phosphor may be added to the upper region, and a second phosphor may be added to the side 51a. The first phosphor is a red phosphor, and the second phosphor may include at least one of red, green, yellow, and blue. The phosphor layer 51 may be a material different from or the same as the resin material of the resin layer 41. The phosphor layer 51 may include a transparent resin material and may include a phosphor therein. The phosphor layer 51 may include one or more types of phosphors, such as at least one of a red phosphor, a green phosphor, a blue phosphor, and a yellow phosphor. The phosphor layer 51 may include a red phosphor or a red phosphor and a red ink. The phosphor layer 51 may convert the wavelength of the incident light by including a phosphor therein. Here, when the light emitted from the light emitting device 21 is the first light and the light converted from the phosphor layer 51 is the second light, the second light may have a longer wavelength than the first light. The second light on the lighting module 100 may be higher than the luminous intensity of the first light. This is because the phosphor layer 51 converts most of the light into a wavelength, so that the luminous intensity of the second light converted by the phosphor layer 51 may be higher than the luminous intensity of the first light. When the light is turned on or off, the surface color of the phosphor layer 51 may be red or a color close to red. When the light is turned on or off, the surface color of the phosphor layer 51 may be a surface color close to the color of the phosphor. When the light is turned off, the surface color of the phosphor layer 51 may be the same as the color of the ink added in the phosphor layer 51 .

[0050] The phosphor layer 51 may include a material such as silicon or epoxy resin. The refractive index of the phosphor layer 51 may be in the range of 1.45 to 1.6. The refractive index of the phosphor layer 51 may be equal to or higher than the refractive index of the diffuser. The refractive index of the phosphor layer 51 may be higher than the refractive index of the resin layer 41. When the refractive index of the phosphor layer 51 is lower than the above range, the uniformity of light may be reduced, and when it is higher than the above range, the light transmittance may be reduced. Therefore, the refractive index of the phosphor layer 51 is set within the above range, so that the light transmittance and light uniformity can be adjusted. Since the phosphor layer 51 has a phosphor therein, it can be defined as a layer that diffuses light. The content of the phosphor may be added in the same amount or ratio as the resin material forming the phosphor layer 51. In the phosphor layer 51, for example, the ratio of the resin material and the phosphor may be mixed in a ratio of 4:6 to 6:4. The phosphor in the phosphor layer 51 may be in the range of 40wt% to 60wt%. The content of the phosphor may have a difference of 20% or less or 10% or less relative to the resin material of the phosphor layer 51. In an embodiment of the present invention, by adding a phosphor with a proportional content of 40% or more and 60% or less to the phosphor layer 51, the color on the surface of the phosphor layer 51 can be set to the color of the phosphor, and the light diffusion and wavelength conversion efficiency can be improved. In addition, the transmission of the wavelength of light emitted from the light emitting device 21 through the phosphor layer 51 (for example, the transmission of blue light) can be reduced. In addition, the light extracted through the phosphor layer 51 can be set as a surface light source according to the wavelength of the phosphor.

[0051] The phosphor layer 51 can be provided in the form of a film, for example, by adding a phosphor to a silicone material and then curing it. The phosphor layer 51 can be formed directly on the resin layer 41, or can be formed separately and then adhered. The phosphor layer 51 manufactured in the form of a film can be adhered to the upper surface of the resin layer 41. An adhesive can be provided between the phosphor layer 51 and the resin layer 41. The adhesive is a transparent material, and can be an adhesive such as a UV adhesive, a silicone resin, or an epoxy resin. Since the phosphor layer 51 is provided in the form of a film, the phosphor can be uniformly distributed inside, and the color sense of the surface color can be set above a certain level.

[0052] Compared with the case of using a polyester (PET) film, a module having high ductility can be provided by using a film made of a resin material for the phosphor layer 51. The phosphor layer 51 may be a protective film having a phosphor or a peeling film having a phosphor. The phosphor layer 51 may be provided as a film that can be attached to or separated from the resin layer 41.

[0053] The thickness t3 (t3<t2) of the phosphor layer 51 may be less than the thickness (t2) of the resin layer 41. The thickness of the phosphor layer 51 may be 0.5 mm or less, for example, in the range of 0.3 mm to 0.5 mm. The thickness t3 of the phosphor layer 51 may be 25% or less of the thickness t2 of the resin layer 41. The thickness t3 of the phosphor layer 51 may be 18% or less of the thickness t2 of the resin layer 41, for example, in the range of 15% to 25%. When the thickness t3 of the phosphor layer 51 is greater than the above range, the light extraction efficiency of the phosphor layer 51 may be reduced, or the module thickness may increase. When the thickness t3 of the phosphor layer 51 is less than the above range, it may be difficult to suppress hot spots, or the wavelength conversion efficiency may be reduced. In addition, the phosphor layer 51 is a layer for wavelength conversion and external protection, and when its thickness is greater than the above range, the ductility of the module may deteriorate and the degree of freedom in design may be reduced. The phosphor converts the wavelength of light emitted from the light emitting device 21. When the phosphor is a red phosphor, it is converted into red light. The resin layer 41 uniformly reflects or diffuses light through the recess 61 so that most of the light emitted from the light emitting device 21 can be wavelength converted, and the light diffused by the resin layer 41 can be wavelength converted by the phosphor.

[0054] Since the phosphor layer 51 includes a phosphor, the external color can be regarded as the color of the phosphor. For example, when the phosphor is red, the surface color can be regarded as red, so when the light emitting device 21 is turned off, a red image can be provided, and when the light emitting device 21 is turned on, a predetermined red light with a luminous intensity can be diffused and a red image of the surface light source can be provided. As another example, a layer of a color having the same color or a deeper color sense as the phosphor can be further provided on the surface of the phosphor layer 51. That is, when a red phosphor is added, a red ink layer can be formed on the surface. The lighting module 100 according to the embodiment can have a thickness of less than 5 mm, emit a surface light source through the surface, and can have flexible characteristics. The lighting module 100 can emit light through the upper surface and the side surface, and when the lighting module is combined with the housing, the side light can be directed upward or reflected again.

[0055] like Figure 2 and Figure 3As shown, the lighting module 100 may include a recess 61. The recess 61 may be disposed on the resin layer 41. The resin layer 41 according to an embodiment of the present invention may include a recess 61 thereon. The recess 61 may overlap with each light emitting device 21 in the vertical direction. The recess 61 and the light emitting device 21 may correspond one to one (1:1). The recess 61 may diffuse the light emitted through the upper surface of the light emitting device 21 on the light emitting device 21 in the lateral direction. The recess 61 may be disposed on the resin layer 41 to reflect or diffuse the incident light. Therefore, the resin layer 41 having the recess 61 may prevent hot spots in the area overlapping with the light emitting device 21 in the vertical direction. Therefore, the lighting module 100 can provide a uniform brightness distribution without adding a diffusing agent inside the resin layer 41.

[0056] When the above-mentioned recess 61 is not in the resin layer 41, the following problems occur. In order to suppress hot spots on the resin layer, a diffusant is added to the inside of the resin layer, so the light intensity is reduced due to the diffusant. In order to prevent hot spots on the resin layer, the thickness of the resin layer with the diffusant is formed to be thicker, for example, more than 5 mm, thereby increasing the module thickness. Alternatively, when a layer with a diffusant is further added to the resin layer, it may lead to an increase in the manufacturing process or the thickness of the module. There is a limit to expanding the spacing between the light-emitting devices in the resin layer. The embodiment of the present invention reduces the amount of diffusant and adds the diffusant to at least one of the phosphor layer 61 and the resin layer 41, thereby further improving the surface light source.

[0057] In an embodiment of the present invention, the concave portion 61 of the resin layer 41 allows the light emitting devices 21 to overlap in the vertical direction and is spaced apart from the light emitting devices 21 at a predetermined interval, thereby suppressing hot spots or dark portions. The thickness of the resin layer 41 may be less than 5 mm, for example, less than 4 mm. Therefore, the lighting module 100 may be provided as a lighting lamp such as an OLED or a lighting lamp of the same size as a micro LED. In addition, light may be diffused in the lateral direction by the concave portion 61, thereby increasing the interval between the light emitting devices 21.

[0058] like Figure 2 and Figure 3 As shown, the recesses 61 are respectively provided on the light emitting devices 21, and may be provided between the resin layer 41 and the phosphor layer 51. The recesses 61 may be recessed from the upper surface of the resin layer 41 toward the light emitting device 21. The recesses 61 may include an air space, and the air space may be provided in an air or vacuum state. The refractive index of the space provided by the recesses 61 may be 1.2 or less or 1. The recesses 61 are made of air, and may include at least one of oxygen, nitrogen, or argon.

[0059] The upper surface of the recess 61 may face the lower surface of the phosphor layer 51. The side surface r1 of the recess 61 may be a boundary surface with the resin layer 41 or a circumferential surface or a side surface of a recessed area. The side surface r1 of the recess 61 may be formed by the resin layer 41. The side surface r1 of the recess 61 may be set to be lower than the upper surface of the resin layer 41. The side surface r1 of the recess 61 may be set to a reflective surface. The side surface r1 of the recess 61 may be set to a surface inclined relative to a horizontal straight line. The side surface r1 of the recess 61 may be set to a surface inclined relative to the horizontal lower surface of the phosphor layer 51. The angle c1 formed between the side surface r1 of the recess 61 and the upper surface of the resin layer may be 50 degrees or less, and may be in the range of 30 degrees to 50 degrees. The recess 61 may include a vertex r2, which is the lowest point of the inclined side surface r1. The inner angle formed by one side and the other side of the recess 61 based on the vertex r2 may be in the range of 80 degrees to 120 degrees. When the angle c1 and the inner angle are smaller than the above range, light extraction efficiency may decrease or a dark portion may appear. When the angle c1 and the inner angle are smaller than the above range, light reflection efficiency may decrease and the hot spot suppression area may become smaller.

[0060] The upper surface area of ​​the recess 61 may be more than 50% of the upper surface area of ​​the light emitting device 21, or may be in the range of 50% to 150% of the upper surface area of ​​the light emitting device 21. When the upper surface area of ​​the recess 61 is less than the above range, the hot spot suppression effect is not obvious, and when the upper surface area is greater than the above range, a dark portion may appear. The upper surface width b1 of the recess 61 may be more than 50% of the upper surface width b0 of the light emitting device 21, or may be in the range of 50% to 150% of the upper surface width b0 of the light emitting device 21. The upper surface width b1 of the recess 61 may be less than or greater than the upper surface width b0 of the light emitting device 21. When the upper surface area of ​​the recess 61 is less than 100%, the recess 61 may be provided in a region facing the upper surface of the light emitting device 21.

[0061] The depth b2 or height of the recess 61 may be less than the distance d1 or the shortest distance between the light emitting device 21 and the recess 61. The distance d1 or the shortest distance between the light emitting device 21 and the recess 61 may be 3 to 5 times the thickness t0 of the light emitting device 21. When the distance d1 or the shortest distance is less than the above range, a dark portion may be generated, and when it is greater than this range, hot spot control may become difficult. The depth b2 or height of the recess 61 may vary according to the inclination angle c1 and the size of the light emitting device 21. The recess 61 may have a trumpet shape. The recess 61 may have an inverted polygonal trumpet shape or an inverted cone shape. The recess 61 may have an inverted truncated cone shape.

[0062] The recess 61 may gradually approach the light emitting device 21 toward the center or vertex r2. At this time, since the inner angle of the vertex r2 of the recess 61 is in the range of 80 to 120 degrees, the light transmitted to the vertex r2 facing the light emitting device 21 may be minimized, and the amount of light extracted through the side surface r1 connected to the vertex r2 or disposed around the circumference thereof may be increased. These recesses 61 may reflect incident light in the lateral direction.

[0063] like Figure 4 and Figure 5 As shown, the concave portion 61 has an inverted polygonal pyramid shape, and the inverted polygonal pyramid shape may have a square cone shape. As another example, Figure 7 The recess 61 shown may have a triangular pyramid shape, such as Figure 8 The pentagonal pyramid shape shown or Fig. 9 The inverted cone shape shown. That is, when the recess 61 has a polygonal pyramid shape, the side surface r1 of the recess 61 may be greater than or less than the number of side surfaces s1 of the light emitting device 21. When the recess 61 has a polygonal side surface r1, a directional characteristic of the reflected light can be provided, and in the case of a conical shape, it can be reflected in all directions. Since the interior r0 of the recess 61 is set as a concave empty space, the light incident due to the difference in refractive index from the resin layer 41 may be refracted or reflected. The shape of the interior r0 of the recess 61 may be a polygonal cone shape or a conical shape.

[0064] Each side surface r1 of the recess 61 may be disposed in the same direction as each side surface s1 of the light emitting device 21. The edge between each side surface r1 of the recess 61 may be disposed at a position corresponding to the edge between each side surface s1 of the light emitting device 21. The edge of the upper surface of the recess 61 and the edge of the upper surface of the light emitting device 21 may extend or be disposed in the same direction. When the upper surface area of ​​the recess 61 is less than 100% of the upper surface area of ​​the light emitting device 21 (e.g., in the range of 50% to 99%), each side surface r1 of the recess 61 may overlap with the upper surface of the light emitting device 21 in the vertical direction. The inclination angle c1 of the side surface r1 of the recess 61 may be 40 degrees or more, for example, in the range of 40 degrees to 50 degrees. Therefore, light directed upward through the upper surface of the light emitting device 21 may be effectively reflected by each side surface r1 of the recess 61.

[0065] Figure 5This is a case where the upper surface area of ​​the recess 61 is smaller than the upper surface area of ​​the light emitting device 21 in the lighting module of the present invention. Here, the interval a3 between the light emitting devices 21 may be smaller than the interval a2 between the recesses 61. When the interval a3 between the light emitting devices 21 is the same in the first direction and the second direction, a relationship a2>a3 may be obtained in the first direction and the second direction. The upper surface width b1 of the recess 61 in the first direction may be smaller than the upper surface width b0 of the light emitting device 21. The interval a2 between the recesses 61 may be smaller than the spacing a1, which is the spacing between the centers of the light emitting devices 21. Each side surface r1 of the recess 61 may reflect incident light as light diffused relative to the side surface of the light emitting device 21.

[0066] Reference Figure 6 , each side surface r1 of the concave portion 61 or its center may correspond to the direction of the edge between the side surfaces of the light emitting device 21. Conversely, the corner portion between each side surface r1 of the concave portion 61 may correspond to the center portion of each side surface of the light emitting device 21. Therefore, the concave portion 61 may reflect light from two adjacent side surfaces r1 to the top of the light emitting device 21 in different directions. Fig.18 As shown, light reflected by the side surface r1 of the recess 61 may be emitted through the upper surface of the resin layer 41, and may be reflected again from the upper surface of the resin layer 41. Therefore, a hot spot on the recess 61 may be suppressed.

[0067] Fig.19 FIG. 4 is a diagram showing a luminance distribution that varies depending on the size of a recess in a lighting module according to an embodiment of the present invention. Fig.19 (a) shows a case where the upper surface area of ​​the recess is the same as the upper surface area of ​​the light emitting device. Fig.19 (b) shows the case where the upper surface area of ​​the concave portion is 200% of the upper surface area of ​​the light emitting device, Fig.19 (c) shows the case where the upper surface area of ​​the concave portion is 400% of the upper surface area of ​​the light emitting device. Fig.19 As shown in (a), when the upper surface area of ​​the concave portion is the same as the size of the light-emitting device, it can be seen that hot spots or dark areas on the light-emitting device are suppressed. Fig.19 (b) Fig.19 As shown in (c), since the upper surface area of ​​the concave portion is more than twice the size of the light emitting device, it can be seen that a dark portion is generated on the light emitting device. Therefore, in an embodiment of the present invention, the upper surface area of ​​the concave portion is set within a range of 50% to 150% of the upper surface area of ​​the light emitting device, thereby reducing the occurrence of dark portions or hot spots on the light emitting device.

[0068] Figures 10 to 12 are other examples of lighting modules according to embodiments of the present invention. Figures 10 to 12A case where the upper surface area of ​​the recess 65 is larger than the upper surface area of ​​the light emitting device 21 is shown. The upper surface area of ​​the recess 65 may be in the range of 101% to 150% of the upper surface area of ​​the light emitting device 21. The upper surface width b1 of the recess 65 may be larger than the upper surface width b0 of the light emitting device 21. The inclination angle c1 of the side surface r1 of the recess 65 is 40 degrees or less, for example, in the range of 30 degrees to 40 degrees. The interval a3 between the light emitting devices 21 may be larger than the interval a2 between the recesses 65. When the interval a3 between the light emitting devices 21 is the same in the first direction and the second direction, a relationship a3>a2 may be obtained in the first and second directions. At this time, the upper surface width b1 of the recess 65 may be larger than the upper surface width b0 of the light emitting device 21 in the first direction. The interval a2 between the recesses 65 may be smaller than the spacing a1, which is the spacing between the centers of the light emitting devices 21. Each side surface r1 of the recess 65 may reflect incident light into a wider area than each side surface s2 of the light emitting device 21. The edge between the side surfaces r1 of the recess 65 corresponds to the edge between each side surface s2 of the light emitting device 21, or may be inclined or offset within a range of 1 to 90 degrees based on the edge of the light emitting device 21. In the embodiment of the present invention, since each side surface r1 of the recess 65 extends further outward than the side surface s2 of the light emitting device 21 based on the center of the upper surface of the light emitting device 21, light traveling through the light emitting device 21 in a vertically upward direction may be reflected in a lateral direction. Therefore, a larger spacing may be provided between the light emitting devices 21.

[0069] like Fig.13 As shown, the side portion 51a of the phosphor layer 51 may be removed. In this case, the side surface of the resin layer 41 may be exposed from the phosphor layer 51. At least one or two or more of the side surfaces of the resin layer 41 may be exposed from the phosphor layer 51. The lower surface area of ​​the resin layer 41 may be smaller than the area of ​​the upper surface of the substrate 11, and the periphery of the upper surface of the substrate 11 may be exposed from the resin layer 41.

[0070] Fig.14 yes Figure 2 and Figure 3 A first variant of the lighting module. Fig.14, the light shielding portion 25 may be disposed on the light emitting device 21. The light shielding portion 25 may include a phosphor or a diffuser therein. The light shielding portion 25 may be formed of a resin material such as a silicone resin or an epoxy resin. The phosphor may include at least one of a blue phosphor, a green phosphor, a red phosphor, or a yellow phosphor. The phosphor may be the same type as the phosphor added to the phosphor layer 51, or may be a red phosphor, a green phosphor, or a yellow phosphor. The diffuser may include at least one of PMMA (polymethyl methacrylate), TiO2, SiO2, Al2O3, and silicon. The light shielding portion 25 may be added with, for example, a diffuser. The light shielding portion 25 may be formed in an area equal to or greater than the upper surface of the light emitting device 21. Therefore, the light shielding portion 25 may partially block the light traveling to the upper surface of the light emitting device 21. The light shielding portion 25 is a white reflective material, and may reduce the transmittance of the incident light. The light shielding portion 25 may be attached to the upper surface of the light emitting device 21. The light shielding portion 25 may be disposed between the light emitting device 21 and the resin layer 41. The light shielding portion 25 may overlap the recess 61 on the resin layer 41 in the vertical direction. Since the light shielding portion 25 and the recess 61 overlap the light emitting device 21 in the vertical direction, hot spots may be prevented. Since the light shielding portion 25 is disposed on the light emitting device 21, the recess 61 may be disposed within a range of 50% to 100% of the upper surface area of ​​the light emitting device 21. The recess 61 may be disposed within a range of 50% to 100% of the upper surface area of ​​the light shielding portion 25. When the recess 61 is smaller than the above range, a ring-shaped hot spot may occur, and when the recess 61 is larger than the above range, a dark portion may be generated.

[0071] Fig.15 yes Figure 2 and Figure 3 A second variation of the lighting module. Fig.15, the phosphor portion 27 may be disposed on the light emitting device 21. The phosphor portion 27 may include a phosphor therein. The phosphor portion 27 may be formed of a resin material such as a silicone resin or an epoxy resin. The phosphor may include at least one of a blue phosphor, a green phosphor, a red phosphor, or a yellow phosphor. The phosphor may be the same type as the phosphor added to the phosphor layer 51, or may be a red phosphor, a green phosphor, or a yellow phosphor. The phosphor portion 27 may be disposed on the upper surface of the light emitting device 21, or may be disposed on the upper surface and the side surface of the light emitting device 21. The phosphor portion 27 may convert the wavelength of the light emitted from the light emitting device 21. The phosphor content of the phosphor portion 27 may be less than the phosphor content of the phosphor added to the phosphor layer 51. This suppresses the reduction in luminous intensity caused by the phosphor portion 27, thereby preventing the reduction in the luminous intensity of the light converted by the wavelength of the phosphor layer 51. The phosphor portion 27 may be disposed between the light emitting device 21 and the resin layer 41. The phosphor portion 27 may overlap vertically with the recess 61 on the resin layer 41. Since the phosphor portion 27 and the recess 61 overlap the light emitting device 21 in the vertical direction, hot spots can be prevented. The upper surface area of ​​the phosphor portion 27 can be larger than the upper surface area of ​​the light emitting device 21. Therefore, since the phosphor portion 27 is provided on the light emitting device 21, the recess 61 can be provided in the range of 50% to 100% of the upper surface area of ​​the light emitting device 21. The recess 61 can be provided in the range of 40% to 90% of the upper surface area of ​​the phosphor portion 27. When the recess 61 is smaller than the above range, a ring-shaped hot spot will appear, and when the recess 61 is larger than the above range, a dark portion will be generated.

[0072] Fig.16 yes Figure 2 A fourth variation of the lighting module, Fig.17 yes Fig.16 The lighting module having the above-mentioned reflective member can be applied to the above-mentioned embodiment or modified example having the light shielding part or the fluorescent body part.

[0073] refer to Fig.16 and Fig.17In the lighting module, the reflective member 31 may be disposed between the substrate 11 and the resin layer 41. The reflective member 31 may not overlap with the light emitting device 21 in the vertical direction. The reflective member 31 may overlap with the resin layer 41 in the vertical direction. The height or thickness of the reflective member 31 may decrease or decrease from the central area toward the edge. The height of the surface of the reflective member 31 may gradually decrease as the distance from the recess 61 increases. The surface height of the reflective member 31 may increase as the distance from the light emitting device 21 increases. The height of the surface of the reflective member 31 may increase as it approaches the center between the recesses 61. The reflective member 31 may be adhered to the upper surface of the substrate 11 by an adhesive, or may be directly adhered. The reflective member 31 may be a reflective sheet, or may include a reflective resin. The reflective member 31 may be formed of a resin body 32 containing silicone or epoxy resin, or the reflective member 31 may have a filler, a reflector, or an absorbent having a high refractive index added thereto. The filler may include at least one of a PMMA (polymethyl methacrylate) series, TiO2, SiO2, Al2O3, and a silicon series. The refractive index of the filler at the emission wavelength is in the range of 1.4 to 2, and the size can be in the range of 4 μm to 6 μm. The surface color of the reflective member 31 can be white. As another example, the reflective member 31 can be set as an absorption member, and the absorption member can include a filler such as graphite in a resin material such as silicon or epoxy resin. Such an absorption member absorbs light around the light emitting device, thereby preventing unnecessary light interference. In order to illustrate the present invention, the reflective member 31 is taken as an example. The resin layer 41 seals the reflective member 31. The resin layer 41 can contact the surface of the reflective member 31. The lower portion 41a of the resin layer 41 can protrude into the reflective member 31. The lower portion 41a of the resin layer 41 can be arranged between the reflective member 31 and the light emitting device 21. The lower portion 41a of the resin layer 41 can contact the upper surface of the substrate 11 through the area between the reflective member 31 and the light emitting device 21. The upper surface of the resin layer 41 can be arranged to be higher than the upper end of the reflective member 31.

[0074] like Fig.17As shown, the reflective member 31 may include a through hole H1 for inserting the light emitting device 21. Although one light emitting device is inserted into each through hole H1, two or three or more light emitting devices may be inserted. That is, one or two or more light emitting devices may be arranged in one through hole H1. The shape of the through hole H1 may be circular or polygonal. The reflective member 31 may be arranged around each of the plurality of light emitting devices 21. The reflective member 31 may cover the periphery of each light emitting device 21 to reflect incident light. The height or thickness b3 of the reflective member 31 relative to the upper surface of the substrate 11 may be greater than the height or thickness of the light emitting device 21. The reflective member 31 may include a concave inclined surface or a curved surface having a height that gradually decreases as the adjacent light emitting device 21 is adjacent. Therefore, the reflective member 31 reflects the light incident from the light emitting device 21 toward the upper portion of the light emitting device 21, and the intensity of the light on the light emitting device 21 may be increased.

[0075] The thickness b3 of the reflective member 31 may be greater than the thickness of the light emitting device 21 and less than the thickness t2 of the resin layer 41. The upper end of the reflective member 31 may be higher than the upper surface of the light emitting device 21 and lower than the upper surface of the resin layer 41. The thickness b3 of the reflective member 31 may be at least 0.4 times the thickness t2 of the resin layer 41, for example, in the range of 0.4 times to 0.6 times. Since the thickness b3 of the reflective member 31 is set within the above range, the light reflection efficiency can be improved and the light intensity can be increased. When the thickness b3 of the reflective member 31 is less than the above range, the light reflection efficiency may be reduced, or the light intensity may be reduced, and when the thickness b3 of the reflective member 31 is greater than the above range, the orientation angle may become less than 40 degrees, or a dark part may appear. The distance d2 between the upper ends of the reflective members 31 or the diameter of the concave portion or cavity formed by the reflective member 31 may be the same as the pitch of the light emitting device 21.

[0076] The upper portion of the reflective member 31 may gradually increase as it approaches the resin layer 41 in the area between the light emitting devices 21. The reflective member 31 may be formed of a reflective resin, or a reflective resin layer may be laminated on the surface of a body made of a transparent resin material. Alternatively, the reflective member 31 may be formed as a metal or non-metal reflective layer on the surface of a body made of epoxy resin or silicone resin. The recess 61 according to an embodiment of the present invention may not overlap with the reflective member 31 in the vertical direction above the resin layer 41. When the upper surface area of ​​the recess 61 is larger than the upper surface area of ​​the light emitting device 21, the upper portion of the side surface r1 of the recess 61 may also overlap with the lower portion of the reflective member 31 in the vertical direction. The recess 61 may reflect light propagating upward from the light emitting device 21 or light reflected by the reflective member 31, thereby suppressing hot spots on the light emitting device 21.

[0077] Fig. 201 is a diagram showing an example of a light emitting device of a lighting module according to an embodiment of the present invention. Fig. 20 , the light emitting device disclosed in the embodiment includes a light emitting structure 225 and a plurality of electrodes 245 and 247. The light emitting structure 225 may be formed of a compound semiconductor layer of group II to VI elements, for example, a compound semiconductor layer of group III-V elements or a compound semiconductor layer of group II-VI elements. The plurality of electrodes 245 and 247 are selectively connected to the semiconductor layer of the light emitting structure 225 and provide power.

[0078] The light emitting device may include a substrate 221. The substrate 221 is disposed on the light emitting structure 225. The substrate 221 may be, for example, a translucent insulating substrate or a translucent conductive substrate. The substrate 221 may be, for example, at least one of sapphire (Al2O3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga2O3. A plurality of convex portions (not shown) are formed on at least one or both of the top surface and the bottom surface of the substrate 221, thereby improving light extraction efficiency. The side cross-sectional shape of each convex portion may include at least one of a hemispherical, a semi-elliptical, or a polygonal shape. The substrate 221 may be removed, but is not limited thereto. At least one of a buffer layer (not shown) and a low conductivity semiconductor layer (not shown) may be included between the substrate 221 and the light emitting structure 225. The buffer layer is a layer for reducing the lattice constant difference between the substrate 221 and the semiconductor layer, and the buffer layer may be selectively formed by a semiconductor of a group II to group VI compound. An undoped group III-V compound semiconductor layer may be further formed below the buffer layer, but the embodiment is not limited thereto. The light emitting structure 225 may be disposed under the substrate 221 and include a first conductive semiconductor layer 222, an active layer 223, and a second conductive semiconductor layer 224. Another semiconductor layer may be further disposed on at least one of the top or bottom of each of the layers 222, 223, and 224, but the embodiment is not limited thereto. The first conductive semiconductor layer 222 is disposed under the substrate 221 and may be implemented as a semiconductor doped with a first conductive dopant, for example, an n-type semiconductor layer. The first conductive semiconductor layer 222 includes In x Al y Ga 1-x-yN(0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first conductive semiconductor layer 222 can be selected from compound semiconductors of group III-V elements, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The first conductive dopant is an n-type dopant and includes dopants such as Si, Ge, Sn, Se and Te. The active layer 223 is disposed below the first conductive semiconductor layer 222 and optionally includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure or a quantum dot structure, and includes a cycle of well layers and barrier layers. The cycle of the well layer / barrier layer is, for example, at least one pair of InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaA, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, and InP / GaAs. The second conductive type semiconductor layer 224 is disposed below the active layer 223. The second conductive type semiconductor layer 224 includes a semiconductor doped with a second conductive type dopant, such as In x Al y Ga 1-x-y N(0≤x≤1, 0≤y≤1, 0≤x+y≤1). The second conductive semiconductor layer 224 may be formed of at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The second conductive semiconductor layer 224 is a p-type semiconductor layer, and the first conductive dopant is a p-type dopant, and may include Mg, Zn, Ca, Sr, and Ba. As another example of the light emitting structure 225, the first conductive semiconductor layer 222 may be implemented as a p-type semiconductor layer, and the second conductive semiconductor layer 224 may be implemented as an n-type semiconductor layer. A semiconductor layer of a third conductive type having a polarity opposite to that of the second conductive type may be formed below the second conductive semiconductor layer 224. In addition, the light emitting structure 225 may be implemented as any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure.

[0079] The first electrode 245 and the second electrode 247 are disposed under the light emitting structure 225. The first electrode 245 is electrically connected to the first conductive semiconductor layer 222, and the second electrode 247 is electrically connected to the second conductive semiconductor layer 224. The first electrode 245 and the second electrode 247 may have a polygonal or circular bottom shape. A plurality of recesses 226 may be disposed in the light emitting structure 225. The light emitting device includes a first electrode layer 241 and a second electrode layer 242, a third electrode layer 243, and insulating layers 231 and 233. Each of the first electrode layer 241 and the second electrode layer 242 may be formed as a single layer or a multilayer, and may be used as a current diffusion layer. The first electrode layer 241 and the second electrode layer 242 may include a first electrode layer 241 disposed under the light emitting structure 225 and a second electrode layer 242 disposed under the first electrode layer 241. The first electrode layer 241 diffuses current, and the second electrode layer 241 reflects incident light. The first electrode layer 241 and the second electrode layer 242 may be formed of different materials. The first electrode layer 241 may be formed of a translucent material (e.g., a metal oxide or a metal nitride). The first electrode layer 241 may be selectively formed, for example, from indium tin oxide (ITO), ITON (ITO nitride), IZO (indium zinc oxide), IZON (IZO nitride), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide). The second electrode layer 242 contacts the lower surface of the first electrode layer 241 and may be used as a reflective electrode layer. The second electrode layer 242 includes a metal such as Ag, Au, or Al. When a portion of the first electrode layer 241 is removed, the second electrode layer 242 may partially contact the lower surface of the light emitting structure 225. As another example, the structure of the first electrode layer 241 and the second electrode layer 242 may be stacked in an omnidirectional reflector layer (ODR) structure. The omnidirectional reflection structure may be formed as a stacked structure of a first electrode layer 241 having a low refractive index and a second electrode layer 242 made of a highly reflective metal material in contact with the first electrode layer 241. The electrode layers 241 and 242 may have, for example, a stacked structure of ITO / Ag. The omnidirectional reflection angle at the interface between the first electrode layer 241 and the second electrode layer 242 may be improved. As another example, the second electrode layer 242 may be removed, and the second electrode layer 242 may be formed of a reflective layer of a different material. The reflective layer may be formed as a distributed Bragg reflector (DBR) structure, and the distributed Bragg reflector structure includes a structure in which two dielectric layers having different refractive indices are alternately arranged, for example, each of a SiO2 layer, a Si3N4 layer, a TiO2 layer, an Al2O3 layer, and a MgO layer may be included, respectively.As another example, the electrode layers 241 and 242 may include both a distributed Bragg reflection structure and an omnidirectional reflection structure, and in this case, a light emitting device having a light reflectivity of more than 98% may be provided. Since the light emitting device mounted in a flip manner emits light reflected from the second electrode layer 242 through the substrate 221, most of the light may be emitted in a vertical direction. According to an embodiment, light emitted to the side of the light emitting device may be reflected by the reflective member to the light exiting region through the adhesive member.

[0080] The third electrode layer 243 is disposed under the second electrode layer 242 and is electrically insulated from the first electrode layer 241 and the second electrode layer 242. The third electrode layer 243 is formed of a metal such as at least one of titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P). The first electrode 245 and the second electrode 247 are disposed under the third electrode layer 243. The insulating layers 231 and 233 block unnecessary contact between the first electrode layer 241 and the second electrode layer 242, the third electrode layer 243, the first electrode 245 and the second electrode 245, and the layers of the light emitting structure 225. The insulating layers 231 and 233 include a first insulating layer 231 and a second insulating layer 233, and the first insulating layer 231 is disposed between the third electrode layer 243 and the second electrode layer 242. The second insulating layer 233 is disposed between the third electrode layer 243 and the first electrode 245 and the second electrode 247. The third electrode layer 243 is connected to the first conductive semiconductor layer 222. The connection portion 244 of the third electrode layer 243 protrudes in the through-hole structure passing through the lower portion of the first electrode layer 241 and the second electrode layer 242 and the light emitting structure 225, and contacts the first conductive semiconductor layer 222. The connection portion 244 may be provided in plurality. A portion 232 of the first insulating layer 231 extends around the connection portion 244 of the third electrode layer 243 along the recess 226 of the light emitting structure 225, and may block the electrical connection between the third electrode layer 243 and the first electrode layer 241 and the second electrode layer 242, the second conductive semiconductor layer 224 and the active layer 223. The insulating layer may be provided on the side surface of the light emitting structure 225 to protect the side surface, but is not limited thereto. The second electrode 247 is provided below the second insulating layer 233, and contacts or connects with at least one of the first electrode layer 241 and the second electrode layer 242 through the opening area of ​​the second insulating layer 233. The first electrode 245 is disposed under the second insulating layer 233 and is connected to the third electrode layer 243 through the opening region of the second insulating layer 233. Therefore, the protrusion 248 of the second electrode 247 is electrically connected to the second conductive semiconductor layer 224 through the first electrode layer 241 and the second electrode layer 242, and the protrusion 246 of the first electrode 245 may be electrically connected to the first conductive semiconductor layer 222 through the third electrode layer 243.

[0081] Fig.21 is a plan view of a vehicle to which a vehicle lamp to which a lighting module according to an embodiment is applied, Fig. 22 FIG. 1 is a diagram showing a vehicle lamp having a lighting module or a lighting device disclosed in an embodiment.

[0082] refer to Fig.21 and Fig. 22 In the vehicle 900, the taillight 800 may include a first light unit 812, a second light unit 814, a third light unit 816, and a housing 810. Here, the first light unit 812 may be a light source used as a direction indicator, the second light unit 814 may be a light source used as a vehicle width light, and the third light unit 816 may be a light source used as a brake light, but is not limited thereto. At least one or all of the first to third light units 812, 814, and 816 may include the lighting module disclosed in the embodiment. The housing 810 accommodates the first to third light units 812, 814, and 816, and may be made of a light-transmitting material. At this time, the housing 810 may have a curvature according to the design of the vehicle body, and the first to third light units 812, 814, and 816 may be implemented as a surface light source having a curved surface according to the shape of the housing 810. When the light unit is applied to a taillight, a brake light, or a turn signal light of a vehicle, such a vehicle light may be applied to a turn signal light of the vehicle.

[0083] The features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to one embodiment. In addition, the features, structures, effects, etc. shown in each embodiment can be combined or modified to other embodiments by a person of ordinary skill in the art to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included within the scope of the present invention.

[0084] In addition, although embodiments have been described above, these are merely examples and do not limit the present invention, and within the scope of not departing from the essential features of the present embodiment, it will be appreciated by those skilled in the art to which the present invention pertains that various modifications and applications not shown above are possible. For example, each component specifically shown in the embodiments may be modified and implemented. Furthermore, differences associated with these modifications and applications should be interpreted as being included within the scope of the present invention as defined by the appended claims.

Claims

1. A lighting module, comprising: substrate; A plurality of light emitting devices, wherein the plurality of light emitting devices are arranged on the substrate; a resin layer disposed on the substrate and the plurality of light emitting devices; as well as a reflective member disposed between the substrate and the resin layer, The resin layer includes a plurality of recessed portions respectively recessed from the upper surface, and Wherein, the thickness of the resin layer is greater than the thickness of the light emitting device and less than 5 mm.

2. The lighting module according to claim 1, wherein: An upper surface area of ​​each of the concave portions includes a range of 50% to 100% of an upper surface area of ​​each of the light emitting devices.

3. The lighting module according to claim 2, wherein: The lower surfaces of the plurality of recesses are lower than the upper surface of the resin layer.

4. The lighting module according to claim 1, wherein: The plurality of recesses have inclined side surfaces.

5. The lighting module according to claim 4, wherein: An angle between the side surface of the recess and the upper surface of the resin layer is in a range of 30 degrees to 50 degrees.

6. The lighting module according to any one of claims 1 to 5, comprising: a plurality of layers, the plurality of layers being disposed on the resin layer, The plurality of layers include at least two or more than three layers of an impurity-free layer, a layer to which a phosphor is added, a layer having a diffusing agent, and a layer to which a phosphor and a diffusing agent are added.

7. The lighting module according to any one of claims 1 to 5, comprising: A phosphor layer is provided on the upper surface of the resin layer and includes at least one of a red phosphor and a red ink.

8. The lighting module according to claim 7, wherein: The phosphor layer includes a plurality of side portions extending to the side surfaces of the resin layer.

9. The lighting module according to claim 8, wherein: Each of the plurality of side portions of the phosphor layer is disposed outside a peripheral recess among the plurality of recesses and a peripheral light emitting device among the plurality of light emitting devices.

10. The lighting module according to claim 7, wherein: The phosphor layer converts first light emitted from each of the plurality of light emitting devices into second light.

11. The lighting module according to claim 10, wherein: The lighting module comprises the substrate, the light emitting device, the resin layer and the phosphor layer. The luminous intensity of the second light on the lighting module is higher than the luminous intensity of the first light.

12. The lighting module according to any one of claims 1 to 5, wherein: The interval between the light emitting devices is equal to or greater than the thickness of the resin layer.

13. The lighting module according to any one of claims 1 to 5, wherein: A distance between each of the light emitting devices and each of the concave portions in a vertical direction is in a range of 3 to 5 times a thickness of the light emitting device.

14. The lighting module according to claim 13, wherein: A depth of each of the plurality of recesses is smaller than a distance between the light emitting device and the recess in the vertical direction.

15. The lighting module according to any one of claims 1 to 5, wherein: Each of the recesses is filled with air or contains a material having a refractive index of 1.

16. The lighting module according to any one of claims 1 to 5, wherein: An upper surface width of each of the concave portions is in a range of 50% to 150% of an upper surface width of each of the light emitting devices.

17. The lighting module according to any one of claims 1 to 5, comprising: A light shielding portion is provided on each of the light emitting devices and overlaps the concave portion in a vertical direction.

18. The lighting module according to claim 17, wherein: The light shielding portion and the recessed portion overlap the light emitting device in the vertical direction.

19. The lighting module according to any one of claims 1 to 5, wherein: The reflective member has a plurality of through holes and is disposed around each of the light emitting devices.

20. The lighting module according to any one of claims 1 to 5, wherein: Each of the recesses has an inverted cone shape or an inverted polygonal pyramid shape.

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