Semiconductor device and method of manufacturing the same
By forming aluminum oxide and nickel-gold electrodes on the aluminum electrode of the semiconductor device, combined with electrolytic nickel-gold plating treatment and photoresist removal technology, the problems of low reliability and poor heat dissipation characteristics of existing semiconductor devices are solved, and high reliability and good heat dissipation effects are achieved.
Patent Information
- Application Number
- CN202410174089.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-22
- Filing Date
- 2024-02-07
- Publication Date
- 2025-03-28
AI Technical Summary
When existing semiconductor devices use connectors or bonding wires for electrical connection, they have problems such as low reliability, poor heat dissipation characteristics and large installation area.
The first and second electrodes containing aluminum are used, and the third electrode of aluminum oxide and the sixth and seventh electrodes of nickel gold are formed thereon, respectively. Through electroless nickel-gold plating treatment and photoresist removal technology, an electrode structure with high reliability and good heat dissipation characteristics is formed.
The high reliability and good heat dissipation characteristics of the semiconductor device are achieved, while reducing the installation area of the semiconductor package.
Smart Images
Figure CN119730264A_ABST
Abstract
Description
[0001]
Related Application
[0002] This application claims priority based on Japanese Patent Application No. 2023-158093 (filing date: September 22, 2023). This application incorporates the entire contents of the basic application by reference. Technical Field
[0003] Embodiments of the present invention relate to a semiconductor device and a method for manufacturing the same. Background Art
[0004] Semiconductor devices having semiconductor chips such as IGBT (Insulated Gate Bipolar Transistor) or MOSFET (Metal Oxide Semiconductor Field Effect Transistor) are used for power conversion, etc. For example, when the semiconductor device is an IGBT, the emitter electrode provided on the upper surface of the semiconductor chip is connected to, for example, a connector or bonding wire provided on the IGBT. Summary of the invention
[0005] A semiconductor device of an embodiment comprises: a semiconductor substrate; a first electrode, which is arranged on the semiconductor substrate and contains aluminum; a second electrode, which is arranged on the semiconductor substrate in a manner separated from the first electrode and contains aluminum; a third electrode, which is arranged on the first electrode and contains aluminum oxide; and a fourth electrode, which is arranged on the second electrode and contains aluminum oxide, and has a film thickness of less than 1 / 2 of the third electrode.
[0006] According to this embodiment, a semiconductor device with high reliability can be provided. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figure 1 It is a schematic cross-sectional view of the semiconductor device according to the first embodiment.
[0008] Figure 2 It is a schematic plan view showing a semiconductor substrate, a first insulating film, a first electrode, and a second electrode according to the first embodiment.
[0009] Figure 3 It is a schematic cross-sectional view of a main part of the semiconductor device according to the first embodiment.
[0010] Figure 4 Schematic cross-sectional views showing the manufacturing process of the semiconductor device according to the first embodiment.
[0011] Figure 5 Schematic cross-sectional views showing the manufacturing process of the semiconductor device according to the first embodiment.
[0012] Figure 6 Schematic cross-sectional views showing the manufacturing process of the semiconductor device according to the first embodiment.
[0013] Figure 7 Schematic cross-sectional views showing the manufacturing process of the semiconductor device according to the first embodiment.
[0014] Figure 8 This is a flowchart showing the manufacturing process of the semiconductor device according to the first embodiment.
[0015] Fig. 9 1 is a schematic cross-sectional view of a main part of a semiconductor device according to a first comparative example of the first embodiment.
[0016] Fig.10 1 is a schematic cross-sectional view of a main part of a semiconductor device according to a second comparative example of the first embodiment.
[0017] Fig.11 It is a schematic cross-sectional view of a semiconductor device according to a second embodiment.
[0018] Fig.12 It is a schematic cross-sectional view showing a part of the manufacturing process of the semiconductor device according to the second embodiment.
[0019] Fig.13 It is a schematic cross-sectional view of a semiconductor device according to a third embodiment.
[0020] Fig.14 It is a schematic cross-sectional view showing the manufacturing process of the semiconductor device according to the third embodiment.
[0021] Fig.15 It is a schematic cross-sectional view showing the manufacturing process of the semiconductor device according to the third embodiment.
[0022] Fig.16 It is a schematic cross-sectional view showing the manufacturing process of the semiconductor device according to the third embodiment.
[0023] Fig.17 It is a schematic cross-sectional view of a main part showing a manufacturing process of the semiconductor device according to the fourth embodiment. DETAILED DESCRIPTION
[0024] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same reference numerals are given to the same components and the like, and the description of the components and the like that have been described once will be appropriately omitted.
[0025] In this specification, in order to indicate the positional relationship of components, the upper direction of the drawings is described as "up", and the lower direction of the drawings is described as "down". In this specification, the concepts of "up" and "down" are not necessarily terms indicating the relationship with the direction of gravity.
[0026] (First Embodiment)
[0027] The semiconductor device of this embodiment comprises: a semiconductor substrate; a first electrode, which is arranged on the semiconductor substrate and contains aluminum; a second electrode, which is arranged on the semiconductor substrate in a manner separated from the first electrode and contains aluminum; a third electrode, which is arranged on the first electrode and contains aluminum oxide; a sixth electrode, which is arranged on the second electrode and contains nickel; and a seventh electrode, which is arranged on the sixth electrode and contains gold.
[0028] Figure 1 2 is a schematic cross-sectional view of the semiconductor device 100 according to the present embodiment. Figure 2 1 is a schematic plan view showing the semiconductor substrate 2 , the first insulating film 50 , the first electrode 4 , and the second electrode 6 of the semiconductor device according to the present embodiment.
[0029] Figure 1 yes Figure 2 Schematic cross-sectional view of the A-A' section.
[0030] In addition, Figure 2 In, omitted Figure 1 A diagram of a portion of the components shown.
[0031] A die pad 1 is a member made of a conductive material such as Cu (copper) on which a semiconductor substrate 2 is disposed. The die pad 1 is used to connect the semiconductor substrate 2 to an external circuit (not shown).
[0032] The semiconductor substrate 2 is disposed on the bare chip pad 1. The semiconductor substrate 2 has a substrate surface (upper surface) 3. The semiconductor substrate 2 of the present embodiment is, for example, a semiconductor substrate having a vertical IGBT or MOSFET disposed on a substrate such as Si (silicon), SiC (silicon carbide), GaAs (gallium arsenide), or a semiconductor layer of GaN (gallium nitride) on a Si substrate.
[0033] Hereinafter, the semiconductor substrate 2 will be described as a substrate having an IGBT.
[0034] Here, an X direction, a Y direction perpendicularly intersecting the X direction, and a Z direction perpendicularly intersecting the X direction and the Y direction are defined. The substrate surface 3 of the semiconductor substrate 2 is arranged parallel to the XY plane.
[0035] The first electrode 4 is provided on the substrate surface 3 of the semiconductor substrate 2. The first electrode 4 is, for example, an electrode electrically connected to the gate of the IGBT. In addition, the first electrode 4 is, for example, an electrode for making a Kelvin connection to the IGBT. The first electrode 4 contains, for example, Al (aluminum). The first electrode 4 is, for example, an electrode mainly composed of Al. The first electrode 4 is, for example, an Al electrode. In addition, the first electrode 4 may also contain elements other than Al.
[0036] The second electrode 6 is provided on the substrate surface 3 of the semiconductor substrate 2 in a manner separated from the first electrode 4. The second electrode 6 is, for example, an electrode electrically connected to the emitter of the IGBT. The second electrode 6 contains, for example, Al (aluminum). The second electrode 6 is, for example, an electrode containing Al as a main component. The second electrode 6 is, for example, an Al electrode. In addition, the second electrode 6 may also contain elements other than Al.
[0037] For example, Figure 2 As shown in FIG. 1 , the first electrode 4 may be provided in plurality, such as first electrodes 4a, 4b, 4c, 4d, and 4e. Figure 2 As shown in FIG. 1 , the second electrode 6 may be provided in plurality like the second electrodes 6 a and 6 b.
[0038] An electrode (not shown) connected to the collector of the IGBT is provided under the semiconductor substrate 2 .
[0039] The second bonding material 70 is provided between the semiconductor substrate 2 and the substrate surface 3. The second bonding material 70 electrically connects, for example, an electrode connected to a collector of the IGBT and the die pad 1. The second bonding material 70 is, for example, solder. However, the second bonding material 70 is not limited to solder.
[0040] The third electrode 8 is provided on the first electrode 4. The third electrode 8 includes aluminum oxide. The third electrode 8 is in direct contact with the first electrode 4, for example. The third electrode 8 is electrically connected to the first electrode 4.
[0041] The first bonding wire 62, for example, breaks through the third electrode 8 during bonding operation and is connected to the first electrode 4. Thus, the first bonding wire 62 is electrically connected to the first electrode 4. The first bonding wire 62 includes, for example, aluminum (Al). The first bonding wire 62 is, for example, an aluminum (Al) wire.
[0042] The sixth electrode 14 is disposed on the second electrode 6. The sixth electrode 14 includes nickel (Ni).
[0043] The seventh electrode 16 is provided on the sixth electrode 14. The seventh electrode 16 includes gold (Au). The seventh electrode 16 is used, for example, to prevent oxidation of the sixth electrode 14. In addition, the seventh electrode 16 is bonded to the connector 60 using a first bonding material 72. Here, the first bonding material 72 is, for example, solder.
[0044] In addition, a layer containing palladium (Pd) (not shown) may be provided between the sixth electrode 14 and the seventh electrode 16 .
[0045] The connector 60 is electrically connected to the sixth electrode 14 and the seventh electrode 16. The connector 60 includes, for example, a conductive material such as copper (Cu). Alternatively, the surface of the connector 60 may be plated with, for example, a material including tin (Sn).
[0046] Furthermore, the connector 60 is a hard connector that cannot be easily bent, unlike the first bonding wire 62 .
[0047] The first insulating film 50 is provided on the semiconductor substrate 2. The first insulating film 50 has a first opening 52 and a second opening 54. The first electrode 4 and the third electrode 8 are provided inside the first opening 52. The second electrode 6, the sixth electrode 14 and the seventh electrode 16 are provided inside the second opening 54. The first insulating film 50 includes, for example, a resin such as polyimide resin, benzocyclobutene resin, epoxy resin, silicon nitride, etc. The first insulating film 50 is preferably resistant to a chemical solution used in the electroless nickel-gold plating process described later.
[0048] Figure 3 It is a schematic diagram of the main part of the semiconductor device 100 according to the present embodiment. Figure 3 (a) is a schematic cross-sectional view of the third electrode 8 and its vicinity of the semiconductor device 100 according to the present embodiment. Figure 3 (b) is a schematic top view of the third electrode 8 of this embodiment. Figure 3 In, omitted Figure 1 A diagram of a portion of the components shown.
[0049] The third electrode 8 has an end portion 7 in a plane parallel to the substrate surface 3 and parallel to the XY plane. The concave portion 9 is formed by being surrounded by the end portion 7. The length of the concave portion 9 in the X direction is L3. The length of the third electrode 8 in the X direction is L4. L4 is longer than L3. The length of the concave portion 9 in the Y direction is L1. The length of the third electrode 8 in the Y direction is L2. In a plane parallel to the XY plane, the end portion 7 is provided around the concave portion 9. L2 is longer than L1.
[0050] On the end portion 7, in a plane parallel to the XY plane, a first insulating film 50 is provided so as to surround the recessed portion 9. The film thickness L6 of the end portion 7 in the Z direction is thicker than the film thickness L5 of the recessed portion 9 in the Z direction.
[0051] Figures 4 to 7 Schematic cross-sectional views showing the manufacturing process of the semiconductor device 100 according to the present embodiment.
[0052] Figure 81 is a flowchart showing the manufacturing process of the semiconductor device 100 according to the present embodiment.
[0053] A first electrode 4 made of aluminum and a second electrode 6 made of aluminum and separated from the first electrode 4 are provided on the substrate surface 3 of the semiconductor substrate 2 having the IGBT. A photoresist 90 having a fifth opening 92 on the first electrode 4 is formed on the semiconductor substrate 2, the first electrode 4, and the second electrode 6. Figure 4 , Figure 8 S102).
[0054] Next, an ashing process is performed, for example, to remove the photoresist 90. In the ashing process, for example, high-energy oxygen plasma is irradiated onto the surface of the photoresist 90 to combine carbon contained in the photoresist 90 with the oxygen plasma. In this way, the photoresist 90 is decomposed into CO2.
[0055] When the photoresist is removed by irradiation with oxygen plasma, the surface of the first electrode 4 is oxidized in the fifth opening 92, thereby forming a third electrode 8 ( Figure 5 , Figure 8 S104 and Figure 8 S106). Thus, a third electrode 8 having a film thickness thicker than 10 nm can be formed. In addition, the film thickness L6 of the third electrode 8 formed by the method for manufacturing a semiconductor device of the present embodiment is, for example, thicker than 8 nm and less than 15 nm. In addition, the film thickness of the third electrode 8 formed by the method for manufacturing a semiconductor device of the present embodiment is more preferably greater than 10 nm and less than 15 nm. In addition, more preferably, the film thickness of the third electrode 8 formed by the method for manufacturing a semiconductor device of the present embodiment is thicker than 12 nm and less than 15 nm. In addition, in addition to the ashing treatment, the photoresist 90 can be removed, for example, using an organic solvent, thereby forming a third electrode 8 containing aluminum oxide.
[0056] Next, a first insulating film 50 is formed on the semiconductor substrate 2, the first electrode 4, and the second electrode 6. The first insulating film 50 includes a resin such as polyimide, silicon nitride, etc. Here, the first insulating film 50 has a first opening 52 and a second opening 54. The first opening 52 is provided on the first electrode 4. The third electrode 8 is provided inside the first opening 52. The second opening 54 is provided on the second electrode 6. Here, the first insulating film 50 ( Figure 6 (b)). This is because, if the surface of the first electrode 4 is exposed, an electrode containing nickel and an electrode containing gold are formed on the first electrode 4. Figure 6 , Figure 8 S108)
[0057] Next, the sixth electrode 14 and the seventh electrode 16 are formed in the second opening 54 above the second electrode 6, for example, by electroless nickel-gold plating. In the electroless nickel-gold plating, first, a strong acid solution treatment and a strong alkaline solution treatment are performed. By the strong alkaline solution treatment, even if a natural oxide film containing aluminum not shown is formed on the second electrode 6, it will be removed. Here, the film thickness of the natural oxide film is generally less than 10 nm. On the other hand, in the case where the film thickness of the third electrode 8 is thick enough, the third electrode 8 will remain on the first electrode 4 even if a strong alkaline solution treatment is performed. Here, for example, by controlling the time of the strong alkaline solution treatment and the temperature of the strong alkaline solution, the third electrode 8 can remain on the first electrode 4. Thus, the sixth electrode 14 containing nickel is formed on the second electrode 6, and the seventh electrode 16 containing gold is formed on the sixth electrode 14 ( Figure 7 , Figure 8 S110).
[0058] In addition, by the above-mentioned strong alkaline liquid treatment, a recessed portion 9 surrounded by the end portion 7 is formed on the third electrode 8. The film thickness of the recessed portion 9 is L5, which is thinner than L6. On the other hand, the end portion 7 of the third electrode 8 is covered by the first insulating film 50, so the film thickness is maintained at L6. In addition, an electrode containing nickel and an electrode containing gold are not formed on the third electrode 8.
[0059] Next, the semiconductor substrate 2 and the die pad 1 are connected using the second bonding material 70 , the first bonding wire 62 and the first electrode 4 are connected, and the connector 60 and the sixth electrode 14 and the seventh electrode 16 are electrically connected using the first bonding material 72 , thereby obtaining the semiconductor device 100 of this embodiment.
[0060] Next, the effects of the semiconductor device and the method for manufacturing the semiconductor device according to the present embodiment will be described.
[0061] When a semiconductor substrate having an IGBT or the like is electrically connected to an external circuit using a connector, a method using, for example, solder as a bonding material is used. Here, there is a problem that the solder does not wet and spread on an electrode having aluminum as a main component. Therefore, for example, an electrode containing nickel and gold is formed on an electrode containing aluminum by an electroless nickel-gold plating method. The electroless nickel-gold plating method can selectively form a nickel-plated film on an electrode having aluminum as a main component. Furthermore, a metal can be selectively formed on the nickel-plated film.
[0062] On the other hand, when a semiconductor substrate having an IGBT or the like is electrically connected to an external circuit using bonding wires, aluminum wires are often used. When aluminum wires are used for bonding, wedge bonding based on aluminum-aluminum bonding is mainly performed. Therefore, it is required that a material containing aluminum is exposed on the outermost surface of an electrode mainly composed of aluminum.
[0063] By using the connector for bonding, the heat dissipation characteristics from the semiconductor substrate can be improved. On the other hand, in the case of bonding using the bonding wire, the mounting area of the semiconductor package using the semiconductor device can be reduced. Therefore, it is considered to bond the connector to the electrode that preferably ensures the heat dissipation characteristics, and to bond the bonding wire to the electrode that does not attach importance to ensuring the heat dissipation characteristics.
[0064] Fig. 9 A schematic cross-sectional view of a main part of a semiconductor device 1000 as a first comparative example of the present embodiment is shown. In the semiconductor device 1000 , a sixth electrode 14 made of nickel (Ni) is provided on the second electrode 6 . In addition, a seventh electrode 16 made of gold (Au) is provided on the sixth electrode 14 .
[0065] Moreover, a ninth electrode 1014 made of nickel (Ni) is provided on the first electrode 4. Moreover, a tenth electrode 1016 made of gold (Au) is provided on the ninth electrode 1014.
[0066] In manufacturing the semiconductor device 1000 , a simple electroless nickel-gold plating method is applied, thereby forming electrodes containing nickel and gold on both the first electrode 4 and the second electrode 6 .
[0067] If the electroless nickel-gold plating method is simply applied as in the semiconductor device 1000 , electrodes made of nickel and electrodes made of gold are formed on all electrodes, which causes a problem that bonding wire connection cannot be performed.
[0068] Fig.10 A schematic cross-sectional view of the main part of a semiconductor device 1100 as a second comparative example of the present embodiment is shown. In the semiconductor device 1100, the sixth electrode 14 and the seventh electrode 16 are formed on the second electrode 6 by a sputtering device or the like using a metal mask not shown. However, when the metal mask and the first insulating film 50 are misaligned, the electrode 17 as a part of the sixth electrode 14 and the electrode 18 as a part of the seventh electrode 16 may be formed on the first insulating film 50. In this case, due to the stress caused by the electrode 17 and the electrode 18, there is a problem that the connection with the connector 60 is defective and the reliability of the semiconductor device 100 is reduced.
[0069] Therefore, the semiconductor device of this embodiment comprises: a semiconductor substrate; a first electrode, which is arranged on the semiconductor substrate and contains aluminum; a second electrode, which is arranged on the semiconductor substrate in a manner separated from the first electrode and contains aluminum; a third electrode, which is arranged on the first electrode and contains aluminum oxide; a sixth electrode, which is arranged on the second electrode and contains nickel; and a seventh electrode, which is arranged on the sixth electrode and contains gold.
[0070] According to the semiconductor device of this embodiment, the third electrode 8 made of aluminum oxide and both the sixth electrode 14 and the seventh electrode 16 can be provided on one semiconductor substrate 2. Therefore, the connector 60 can be bonded to the sixth electrode 14 and the seventh electrode 16 via the first bonding material 72. Furthermore, the first bonding wire 62 can be connected to the third electrode 8. Therefore, a semiconductor device with high reliability can be obtained.
[0071] Furthermore, by the above manufacturing method, the first insulating film 50 is provided on the end 7 of the third electrode 8 in the direction parallel to the substrate surface 3 of the semiconductor substrate 2. The film thickness L6 of the end 7 of the third electrode 8 is thicker than the film thickness L5 of the recessed portion 9 of the third electrode 8.
[0072] According to the semiconductor device of the present embodiment, a semiconductor device with high reliability can be provided. In addition, according to the method for manufacturing a semiconductor device of the present embodiment, a method for manufacturing a semiconductor device capable of manufacturing a semiconductor device with high reliability can be provided.
[0073] (Second Embodiment)
[0074] The semiconductor device of this embodiment comprises: a semiconductor substrate; a first electrode, which is arranged on the semiconductor substrate and includes aluminum; a second electrode, which is arranged on the semiconductor substrate in a manner separated from the first electrode and includes aluminum; a third electrode, which is arranged on the first electrode and includes aluminum oxide; and a fourth electrode, which is arranged on the second electrode and includes aluminum oxide, and the film thickness is less than 1 / 2 of the third electrode.
[0075] Here, description of contents overlapping with those of the first embodiment will be omitted.
[0076] Fig.11 2 is a schematic cross-sectional view of a semiconductor device 200 according to the present embodiment. A fourth electrode 10 made of aluminum oxide is provided on the second electrode 6. The film thickness L7 of the fourth electrode 10 is 1 / 2 or less of the film thickness L6 of the end portion 7 of the third electrode 8.
[0077] The second bonding wire 66 breaks through the fourth electrode 10 during bonding operation and is connected to the second electrode 6. Thus, the second bonding wire 66 is electrically connected to the second electrode 6. The second bonding wire 66 includes, for example, aluminum (Al). The second bonding wire 66 is, for example, an aluminum (Al) wire.
[0078] In addition, Figure 3 (a) and Figure 3 Similarly to that shown in (b), in a plane parallel to the XY plane parallel to the substrate plane 3, a recessed portion 9 surrounded by an end portion 7 is provided on the third electrode 8. The length of the recessed portion 9 in the X direction is L3. The length of the third electrode 8 in the X direction is L4. The length of the recessed portion 9 in the Y direction is L1. The length of the third electrode 8 in the Y direction is L2. In a plane parallel to the XY plane, the end portion 7 is provided around the recessed portion 9. On the end portion 7, in a plane parallel to the XY plane, a first insulating film 50 is provided so as to surround the recessed portion 9. The film thickness L6 of the end portion 7 in the Z direction is thicker than the film thickness L5 of the recessed portion 9 in the Z direction.
[0079] Fig.12 It is a schematic cross-sectional view showing a part of the manufacturing process of the semiconductor device 200 according to the present embodiment.
[0080] For example, Fig.12 As shown, a photoresist 90 is formed, and the thickness L11 of the photoresist 90 on the second electrode 6 is thinner than the thickness L10 of the photoresist 90 on the substrate surface 3 of the semiconductor substrate 2 between the first electrode 4 and the second electrode 6. As a result, the photoresist 90 is removed by ashing more quickly than other portions on the second electrode 6. Therefore, the fourth electrode 10 containing aluminum oxide and having a thinner film thickness than the third electrode 8 can be formed on the second electrode 6. By controlling the film thickness of the photoresist 90 on the second electrode 6, the relationship between the film thicknesses of the third electrode 8 and the fourth electrode 10 can be controlled.
[0081] According to the semiconductor device of the present embodiment, a semiconductor device with high reliability can be provided. In addition, according to the method for manufacturing a semiconductor device of the present embodiment, a method for manufacturing a semiconductor device capable of manufacturing a semiconductor device with high reliability can be provided.
[0082] (Third Embodiment)
[0083] The semiconductor device of this embodiment is different from the semiconductor devices of the first embodiment and the second embodiment in that the first insulating film includes silicon oxide or silicon nitride, and the semiconductor device further includes: a third opening portion provided on the first insulating film and provided on the first opening portion; and a fourth opening portion provided on the second opening portion and including resin. Here, the description of the contents repeated with the first embodiment and the second embodiment is omitted.
[0084] Fig.13 2 is a schematic cross-sectional view of a semiconductor device 300 according to the present embodiment.
[0085] The first insulating film 50 of the semiconductor device 300 of the present embodiment includes, for example, silicon oxide or silicon nitride.
[0086] The second insulating film 56 is provided on the first insulating film 50. The second insulating film 56 has a third opening 57 and a fourth opening 58. The third opening 57 is provided on the first opening 52. The fourth opening 58 is provided on the second opening 54. The second insulating film 56 includes a resin such as a polyimide resin, a benzocyclobutene resin, or an epoxy resin.
[0087] Figures 14 to 16 Schematic cross-sectional views showing the manufacturing process of the semiconductor device 300 according to the present embodiment.
[0088] A first opening 52 is formed on the first electrode, and a first insulating film 50 ( Fig.14 ). Next, when oxygen plasma is irradiated by ashing treatment or the like, for example, a third electrode 8 made of aluminum oxide is formed on the first electrode 4 in the first opening 52. Next, a second opening 54 is formed on the second electrode 6 ( Fig.15 ). Then, the sixth electrode 14 and the seventh electrode 16 are formed on the second electrode 6 by electroless nickel plating-gold plating. Next, a second insulating film 56 is formed on the first insulating film 50, and the second insulating film 56 has a third opening portion provided on the first opening portion and a fourth opening portion provided on the second opening portion ( Fig.16 ).
[0089] As in the present embodiment, the first insulating film 50 made of silicon oxide or silicon nitride can also be used as a mask material when forming the third electrode 8 made of aluminum oxide.
[0090] According to the semiconductor device of the present embodiment, a semiconductor device with high reliability can be provided. In addition, according to the method for manufacturing a semiconductor device of the present embodiment, a method for manufacturing a semiconductor device capable of manufacturing a semiconductor device with high reliability can be provided.
[0091] (Fourth Embodiment)
[0092] Fig.17 It is a schematic cross-sectional view of a main part showing the steps of the method for manufacturing a semiconductor device according to the present embodiment.
[0093] A protective material P having an opening P1 is formed on the aluminum base material 5 formed on the semiconductor substrate 2. Next, the semiconductor device in the process of being manufactured is immersed in the chromic acid aqueous solution S in the container V. The protective material P is resistant to the chromic acid aqueous solution S. As the protective material P, for example, a photoresist, a metal thin film containing gold or platinum, silicon oxide or silicon nitride is used. Then, the third electrode 8 is formed by anodizing treatment using the chromic acid aqueous solution S. When anodizing treatment is used, the third electrode 8 having a maximum film thickness of about 100 nm can be formed.
[0094] According to the semiconductor device of the present embodiment, a semiconductor device with high reliability can be provided. In addition, according to the method for manufacturing a semiconductor device of the present embodiment, a method for manufacturing a semiconductor device capable of manufacturing a semiconductor device with high reliability can be provided.
[0095] Several embodiments and examples of the present invention have been described, but these embodiments and examples are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope and subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.
[0096] In addition, the above-mentioned embodiments can be summarized into the following technical solutions.
[0097] (Technical Solution 1)
[0098] A semiconductor device comprising:
[0099] Semiconductor substrates;
[0100] A first electrode, disposed on the semiconductor substrate and comprising aluminum;
[0101] a second electrode disposed on the semiconductor substrate in a manner separated from the first electrode and comprising aluminum;
[0102] a third electrode disposed on the first electrode and comprising aluminum oxide; and
[0103] The fourth electrode is disposed on the second electrode, comprises aluminum oxide, and has a film thickness that is less than 1 / 2 of that of the third electrode.
[0104] (Technical Solution 2)
[0105] The semiconductor device according to claim 1, wherein:
[0106] A first insulating film is further provided, the first insulating film being provided on the semiconductor substrate and having a first opening and a second opening, the first opening having the first electrode and the third electrode provided therein, and the second opening having the second electrode and the fourth electrode provided therein,
[0107] The third electrode has a recessed portion surrounded by an end portion in a plane parallel to the upper surface of the semiconductor substrate.
[0108] The first insulating film is provided on the end portion of the third electrode so as to surround the recessed portion within a plane parallel to the upper surface of the semiconductor substrate.
[0109] (Technical Solution 3)
[0110] A semiconductor device comprising:
[0111] Semiconductor substrates;
[0112] A first electrode, disposed on the semiconductor substrate and comprising aluminum;
[0113] a second electrode disposed on the semiconductor substrate in a manner separated from the first electrode and comprising aluminum;
[0114] a third electrode disposed on the first electrode and comprising aluminum oxide;
[0115] a sixth electrode disposed on the second electrode and comprising nickel; and
[0116] The seventh electrode is disposed on the sixth electrode and comprises gold.
[0117] (Technical Solution 4)
[0118] The semiconductor device according to technical solution 3, wherein:
[0119] further comprising a first insulating film, the first insulating film being provided on the semiconductor substrate and having a first opening and a second opening, the first opening having the first electrode and the third electrode provided therein, and the second opening having the second electrode, the sixth electrode, and the seventh electrode provided therein,
[0120] The third electrode has a recessed portion surrounded by an end portion in a plane parallel to the upper surface of the semiconductor substrate.
[0121] The first insulating film is provided on the end portion of the third electrode so as to surround the recessed portion within a plane parallel to the upper surface of the semiconductor substrate.
[0122] (Technical Solution 5)
[0123] The semiconductor device according to claim 3 or 4, wherein the thickness of the third electrode is thicker than 10 nm.
[0124] (Technical Solution 6)
[0125] A semiconductor device according to Technical Solution 2, Technical Solution 4 or Technical Solution 5, wherein the length of the first opening portion above the third electrode in a direction parallel to the upper surface of the semiconductor substrate is shorter than the length of the third electrode in a direction parallel to the upper surface of the semiconductor substrate.
[0126] (Technical Solution 7)
[0127] A semiconductor device according to any one of technical solutions 2 and 4 to 6, wherein:
[0128] The first insulating film includes silicon oxide or silicon nitride,
[0129] The semiconductor device further includes a second insulating film containing resin. The second insulating film includes a third opening provided on the first insulating film and provided on the first opening; and a fourth opening provided on the second opening.
[0130] (Technical Solution 8)
[0131] A method for manufacturing a semiconductor device comprises the following steps:
[0132] On a semiconductor substrate, a first electrode disposed on the semiconductor substrate and including aluminum, and a second electrode disposed on the semiconductor substrate and including aluminum in a manner separated from the first electrode, a photoresist having a fifth opening portion formed on the first electrode;
[0133] removing the photoresist;
[0134] When removing the photoresist, forming a third electrode including aluminum oxide on the first electrode in the fifth opening;
[0135] The first insulating film is formed on the semiconductor substrate, the first electrode, and the second electrode, the first insulating film having a first opening on the first electrode and a second opening on the second electrode, the third electrode is provided inside the first opening, and the region above the end of the third electrode is covered by the first insulating film, and a concave portion of the third electrode and an end of the third electrode provided so as to surround the concave portion are formed in the first opening in a plane parallel to the upper surface of the semiconductor substrate;
[0136] By electroless nickel-gold plating, a sixth electrode disposed on the second electrode and containing nickel and a seventh electrode disposed on the sixth electrode and containing gold are formed in the second opening above the second electrode;
[0137] By the electroless nickel-gold plating process, a recessed portion surrounded by the end portion is formed in the third electrode.
[0138] (Technical Solution 9)
[0139] The method for manufacturing a semiconductor device according to technical solution 8, wherein:
[0140] forming the photoresist, wherein the thickness of the photoresist on the second electrode is thinner than the thickness of the photoresist on the upper surface of the semiconductor substrate between the first electrode and the second electrode;
[0141] When the third electrode is formed, a fourth electrode including aluminum oxide and having a film thickness of 1 / 2 or less of that of the third electrode is formed on the second electrode.
[0142] [Explanation of Reference Numerals]
[0143] 2 Semiconductor substrate
[0144] 3 Upper surface
[0145] 4. First electrode
[0146] 6 Sixth second electrode
[0147] 7 ends
[0148] 8 Eighth electrode
[0149] 9 recess
[0150] 10 Fourth electrode
[0151] 14 Sixth electrode
[0152] 16 Seventh Electrode
[0153] 50 first insulating film
[0154] 52 First opening
[0155] 54 Second opening
[0156] 56 Second insulating film
[0157] 57 Third opening
[0158] 58 Fourth opening
[0159] 70 first bonding material
[0160] 100 Semiconductor devices
[0161] 200 Semiconductor devices
[0162] 300 Semiconductor devices.
Claims
1. A semiconductor device comprising: Semiconductor substrates; A first electrode, disposed on the semiconductor substrate and comprising aluminum; a second electrode disposed on the semiconductor substrate in a manner separated from the first electrode and comprising aluminum; a third electrode disposed on the first electrode and comprising aluminum oxide; as well as The fourth electrode is disposed on the second electrode, comprises aluminum oxide, and has a film thickness that is less than 1 / 2 of that of the third electrode.
2. The semiconductor device according to claim 1, wherein A first insulating film is further provided, the first insulating film being provided on the semiconductor substrate and having a first opening and a second opening, the first opening having the first electrode and the third electrode provided therein, and the second opening having the second electrode and the fourth electrode provided therein, The third electrode has a recessed portion surrounded by an end portion in a plane parallel to the upper surface of the semiconductor substrate. The first insulating film is provided on the end portion of the third electrode so as to surround the recessed portion within a plane parallel to the upper surface of the semiconductor substrate.
3. A semiconductor device comprising: Semiconductor substrates; A first electrode, disposed on the semiconductor substrate and comprising aluminum; a second electrode disposed on the semiconductor substrate in a manner separated from the first electrode and comprising aluminum; a third electrode disposed on the first electrode and comprising aluminum oxide; a sixth electrode disposed on the second electrode and comprising nickel; and The seventh electrode is disposed on the sixth electrode and comprises gold.
4. The semiconductor device according to claim 3, wherein: further comprising a first insulating film, the first insulating film being provided on the semiconductor substrate and having a first opening and a second opening, the first opening having the first electrode and the third electrode provided therein, and the second opening having the second electrode, the sixth electrode, and the seventh electrode provided therein, The third electrode has a recessed portion surrounded by an end portion in a plane parallel to the upper surface of the semiconductor substrate. The first insulating film is provided on the end portion of the third electrode so as to surround the recessed portion within a plane parallel to the upper surface of the semiconductor substrate.
5. The semiconductor device according to claim 3 or 4, wherein: The third electrode has a thickness greater than 10 nm.
6. The semiconductor device according to claim 2 or 4, wherein: A length of the first opening above the third electrode in a direction parallel to the upper surface of the semiconductor substrate is shorter than a length of the third electrode in a direction parallel to the upper surface of the semiconductor substrate.
7. The semiconductor device according to claim 2 or 4, wherein: The first insulating film includes silicon oxide or silicon nitride, The semiconductor device further includes a second insulating film containing resin. The second insulating film includes a third opening provided on the first insulating film and provided on the first opening; and a fourth opening provided on the second opening.
8. A method for manufacturing a semiconductor device, comprising the following steps: On a semiconductor substrate, a first electrode disposed on the semiconductor substrate and containing aluminum, and a second electrode disposed on the semiconductor substrate in a manner separated from the first electrode and containing aluminum, a photoresist having a fifth opening portion formed on the first electrode; removing the photoresist; When removing the photoresist, forming a third electrode including aluminum oxide on the first electrode in the fifth opening; The first insulating film is formed on the semiconductor substrate, the first electrode, and the second electrode, the first insulating film having a first opening on the first electrode and a second opening on the second electrode, the third electrode is provided inside the first opening, and the region above the end of the third electrode is covered by the first insulating film, and a concave portion of the third electrode and an end of the third electrode provided so as to surround the concave portion are formed in the first opening in a plane parallel to the upper surface of the semiconductor substrate; By electroless nickel-gold plating, a sixth electrode disposed on the second electrode and containing nickel and a seventh electrode disposed on the sixth electrode and containing gold are formed in the second opening above the second electrode; By the electroless nickel-gold plating process, a recessed portion surrounded by the end portion is formed in the third electrode.
9. The method for manufacturing a semiconductor device according to claim 8, wherein: forming the photoresist, wherein the thickness of the photoresist on the second electrode is thinner than the thickness of the photoresist on the upper surface of the semiconductor substrate between the first electrode and the second electrode; When the third electrode is formed, a fourth electrode including aluminum oxide and having a film thickness of 1 / 2 or less of that of the third electrode is formed on the second electrode.
Citation Information
Patent Citations
Game system, control method used for the same, and computer program
JP2023158093A