Electro-optical device and electronic apparatus

Abstract

The invention provides an electro-optical device and an electronic apparatus, which alleviate positional accuracy when a substrate on which an LED is formed and a substrate having a drive circuit are bonded. The present invention comprises: a common electrode; a plurality of structures including a first semiconductor layer electrically connected to the common electrode, a second semiconductor layer, and a light-emitting functional layer provided between the first semiconductor layer and the second semiconductor layer; and a drive circuit board including a pixel electrode and a drive circuit electrically connected to the pixel electrode, the plurality of structures including: a first structure provided at a position overlapping the pixel electrode in plan view, the pixel electrode being electrically connected to the second semiconductor layer of the first structure; and a second structure that is provided at a position that does not overlap with a pixel electrode that is not electrically connected to a second semiconductor layer of the second structure in plan view.

Description

Technical Field

[0001] The present invention relates to an electro-optical device and an electronic device. Background Art

[0002] A micro LED display device having a micro LED panel having a plurality of micro LED pixels and a micro LED driving substrate for driving the micro LEDs individually is known (see, for example, Patent Document 1, FIG. 18 ). The micro LED driving substrate includes a CMOS unit (driving circuit) for driving the micro LED pixels individually and a bump for electrically connecting to the micro LED pixels.

[0003] In the plurality of micro LED pixels, one electrode is a common electrode, and the other electrode is opposite to the micro LED driving substrate. Furthermore, the other electrode in the micro LED pixel is connected to the bump of the micro LED driving substrate to make the micro LED panel and the micro LED driving substrate adhere to each other.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2018-185515

[0005] However, the technology described in Patent Document 1 has a problem in that the positioning requirements when closely attaching the micro LED driving substrate and the micro LED panel are very strict. Summary of the invention

[0006] In order to solve the above-mentioned problems, an electro-optical device of one embodiment of the present invention comprises: a first electrode; a plurality of structures, which include: a first semiconductor layer of a first conductivity type, which is electrically connected to the first electrode; a second semiconductor layer of a second conductivity type; and a light-emitting functional layer, which is arranged between the first semiconductor layer and the second semiconductor layer and can emit light by injecting current; and a substrate, which includes a second electrode and a driving circuit electrically connected to the second electrode, and the plurality of structures include: a first structure, which is arranged at a position overlapping with the second electrode when viewed from above, and the second electrode is electrically connected to the second semiconductor layer of the first structure; and a second structure, which is arranged at a position not overlapping with the second electrode when viewed from above, and the second electrode is not electrically connected to the second semiconductor layer of the second structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a cross-sectional view schematically showing the electro-optical device according to the embodiment.

[0008] Figure 2 It is a cross-sectional view schematically showing the electro-optical device according to the embodiment.

[0009] Figure 3 It is a cross-sectional view schematically showing the electro-optical device according to the embodiment.

[0010] Figure 4 It is a plan view showing a buffer layer, a pixel electrode, etc. in the electro-optical device.

[0011] Figure 5 It is a cross-sectional view showing the structure of a structure in the electro-optical device.

[0012] Figure 6 It is a plan view showing the positional relationship between the structure and the buffer layer in the electro-optical device.

[0013] Figure 7 This is a perspective view showing a head mounted display using an electro-optical device.

[0014] Figure 8 2 is a diagram showing the optical structure of a head mounted display.

[0015] Description of symbols

[0016] 10: electro-optical device; 20: driving circuit substrate; 30: LED substrate; 202: driving circuit; 204: reflecting layer; 221: pixel electrode (second electrode); 231: buffer layer; 241: insulating layer; 310: common electrode (first electrode); 320: structure; 320a: structure (first structure); 320b: structure (second structure); 321: first semiconductor layer; 322: second semiconductor layer; 325: light-emitting functional layer; Ap: opening; 400: head-mounted display. DETAILED DESCRIPTION

[0017] Hereinafter, the electro-optical device of the embodiment will be described with reference to the accompanying drawings. In addition, in each figure, the size and scale of each part are appropriately different from the actual size and scale. In addition, the embodiment described below is a preferred specific example, and therefore various preferred limitations are added technically, but the scope of the present disclosure is not limited to these modes as long as there is no record of the main purpose of the present disclosure in the following description.

[0018] Figures 1 to 3 1 is a partial cross-sectional view for illustrating the structure of the electro-optical device 10 according to the embodiment. The electro-optical device 10 is a structure in which the drive circuit substrate 20 and the LED substrate 30 are bonded together and then the substrate 300 in the LED substrate 30 is peeled off. Figure 1 2 is a diagram showing a state before the driving circuit substrate 20 and the LED substrate 30 are attached to each other. Figure 2 2 is a diagram showing a state where the driving circuit substrate 20 and the LED substrate 30 are tightly attached to each other. Figure 3 FIG. 1 is a diagram showing a state where the substrate 300 is peeled off from the LED substrate 30 .

[0019] At the driving circuit substrate 20, the pixel electrodes 221 are arranged in a matrix in the horizontal and vertical directions when viewed from above. For convenience, the horizontal direction in the matrix arrangement of the pixel electrodes 221 is defined as the X direction, and the vertical direction is defined as the Y direction. In addition, when the driving circuit substrate 20 and the LED substrate 30 are bonded together, the direction from the driving circuit substrate 20 toward the LED substrate 30 is defined as the Z direction.

[0020] In addition, in this embodiment, the Z direction is the emission direction of light. In addition, the pixel electrode 221 is an example of a second electrode. In this description, a top view refers to observing the substrate from a direction perpendicular to the substrate surface, that is, a thickness direction of the substrate, and a cross-sectional view refers to observing the substrate by breaking it in a direction perpendicular to the substrate surface.

[0021] like Figure 1 As shown, the driving circuit substrate 20 has a driving circuit 202 and the like formed on a substrate 200. The substrate 200 is, for example, a Si substrate. The driving circuit 202 is provided in a one-to-one correspondence with a pixel, which is the smallest unit of display when viewed as a display device, and supplies a current corresponding to the brightness of the pixel to an element corresponding to the pixel.

[0022] The output terminal of the driving circuit 202 is electrically connected to the reflective layer 204 via a plug 206 filled in the contact hole. The plug 206 is made of, for example, tungsten (W) or an alloy containing tungsten.

[0023] The reflective layer 204 is, for example, a conductive layer formed by laminating an aluminum and copper alloy (AlCu) film on a titanium (Ti) film, and is formed by patterning a reflective and light-shielding conductive layer into an island shape when viewed from above for each pixel. The reflective layer 204 patterned into an island shape covers the drive circuit 202 when viewed from above. Light incident from the opposite direction of the Z direction is reflected by the reflective layer 204 and emitted in the Z direction. In other words, since the drive circuit 202 is shielded by the reflective layer 204, the reduction in transistor characteristics caused by light leakage, etc. can be suppressed, and the emission efficiency in the Z direction can be improved. In addition, the reflective layer 204 is an example of a light-shielding layer.

[0024] The insulating layer 208 is a reflection enhancing layer for improving the reflection characteristics of the reflective layer 204. The insulating layer 208 has insulating properties and light-transmitting properties, and is patterned to cover the reflective layer 204 and have substantially the same shape as the reflective layer 204 in a plan view. As the insulating layer 208, for example, silicon oxide is used.

[0025] Furthermore, grooves 209 are generated by the island-shaped patterning of the reflective layer 204 and the insulating layer 208 .

[0026] The insulating layer 210 covers the insulating layer 208 and is provided along the groove 209. Therefore, the insulating layer 210 has a concave portion 210a near the groove 209. A buried insulating layer 212 is provided to fill the concave portion 210a. As the insulating layer 210, for example, silicon nitride (SiN) is used, and as the buried insulating layer 212, for example, silicon oxide is used.

[0027] The insulating layers 208 and 210 are opened with contact holes for each pixel, and the contact holes are filled with plugs 214. The surfaces of the insulating layer 210, the buried insulating layer 212, and the plugs 214 are planarized by CMP or the like. The plugs 214 are made of, for example, tungsten (W) or an alloy containing tungsten.

[0028] On the flattened surface, a pixel electrode 221 is provided for each pixel. The pixel electrode 221 is formed by patterning a light-transmitting conductive layer such as ITO into a shape substantially the same as the reflective layer 204 so as to overlap the reflective layer 204 in a plan view. The pixel electrode 221 is electrically connected to the reflective layer 204 via a plug 214.

[0029] The buffer layer 231 is provided for each pixel electrode 221. The buffer layer 231 functions as a buffer layer and a connection layer when attached to the LED substrate 30, and is composed of a stack of multiple metal layers. For example, when viewed from the pixel electrode 221, the buffer layer 231 is stacked in the order of a Ti film and an Au film.

[0030] The buffer layer 231 is provided within the pixel electrode 221 in a plan view. Specifically, the outer edge of the buffer layer 231 is located ahead of the outer edge of the pixel electrode 221 when viewed from the diagonal center of the pixel electrode 221 or the buffer layer 231 in a plan view.

[0031] The insulating layer 241 is stacked on the insulating layer 210, the buried insulating layer 212, or the pixel electrode 221, and is provided to cover the peripheral portion of the pixel electrode 221 and not to cover the buffer layer 231 within the range of the opening Ap. As the insulating layer 241, for example, silicon oxide is used.

[0032] The insulating layer 241 is divided into a portion 241a stacked on the insulating layer 210 or buried in the insulating layer 212 and a portion 241b stacked on the pixel electrode 221. An end portion 241c of the portion 241b defines an outer edge of the opening Ap.

[0033] Figure 4 1 and 2 are diagrams showing the shapes of the opening Ap, the buffer layer 231 , and the pixel electrode 221 in the driving circuit substrate 20 in a plan view.

[0034] As shown in the figure, in a plan view, the buffer layer 231 is located in the opening region of the opening Ap, and a portion 241 b covers the outer edge of the pixel electrode 221 .

[0035] Therefore, when viewed from the diagonal center of the pixel electrode 221 or the buffer layer 231 in a plan view, the positions are in the order of the outer edge of the buffer layer 231 , the end 241 c of the insulating layer 241 , and the outer edge of the pixel electrode 221 .

[0036] The buffer layer 231 and a portion 241 b of the insulating layer 241 stacked on the pixel electrode 221 are aligned to substantially the same height by, for example, a CMP process or the like.

[0037] The LED substrate 30 includes a substrate 300, a common electrode 310, and a plurality of structures 320. The substrate 300 is, for example, a Si substrate, a quartz substrate, a sapphire substrate, etc. The common electrode 310 is a light-transmitting conductive layer such as ITO or Tin, and is stacked on the substrate 300. The common electrode 310 is an example of a first electrode.

[0038] The structure 320 is a columnar object stacked on the common electrode 310 and protruding downward in the figure. If the conditions are met, it becomes a light-emitting body. In addition, the stacking order of the structure 320 is based on the substrate 300. In other words, the structure protrudes downward in the figure, but in the manufacturing process, it is sequentially formed in the upward direction based on the substrate 300. When it is attached to the driving circuit substrate 20, it is turned over as shown in FIG. Figure 1 As shown.

[0039] Figure 5 3 is a partial cross-sectional view showing the detailed structure of a plurality of structures 320 formed on the LED substrate 30. Focus is placed on one of the plurality of structures 320. When viewed from the common electrode 310, the structure 320 includes a first semiconductor layer 321, a light-emitting functional layer 325, a second semiconductor layer 322, and an electrode 327 in this order.

[0040] The first semiconductor layer 321 is, for example, an n-type GaN layer doped with Si.

[0041] The light-emitting functional layer 325 is an active layer capable of generating light by injecting current. The light-emitting functional layer 325 includes, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer.

[0042] The second semiconductor layer 322 is a layer of conductivity type different from that of the first semiconductor layer 321 , and is, for example, a p-type GaN layer doped with Mg. The first semiconductor layer 321 and the second semiconductor layer 322 are cladding layers that confine light in the light emitting functional layer 325 .

[0043] The electrode 327 is an electrode electrically connected to the buffer layer 231 in the driving circuit substrate 20 , and is a conductive film formed by laminating, for example, a Pt film, a Ti film, and an Au film in this order when viewed from the second semiconductor layer 322 .

[0044] In the structure 320, the p-type second semiconductor layer 322, the i-type light-emitting functional layer 325, and the n-type first semiconductor layer 321 constitute a pin diode. Therefore, in the light-emitting device 100, when a forward bias voltage of the pin diode is applied to the electrode 327 and the common electrode 310, current is injected into the light-emitting functional layer 325, and recombination of electrons and holes occurs in the light-emitting functional layer 325. Light is generated by this recombination.

[0045] Figure 6 It is a plan view showing the arrangement of the structures 320 in the LED substrate 30 when viewed from the drive circuit substrate 20 .

[0046] The top view shape of the structure 320 is a substantially square in the present embodiment, and is arranged in a matrix in the X direction and the Y direction, similarly to the pixel electrodes 221 of the drive circuit substrate 20. However, the length of one side of the pixel electrode 221 is several μm, specifically about 3 μm, when viewed from above, whereas the length of one side of the square in the structure 320 is, for example, not less than 50 nm and not more than 500 nm, and the arrangement pitch is about twice that.

[0047] In addition, the plan view shape of the structure 320 is set to be a substantially square in this embodiment, but is not limited to a square. As the plan view shape of the structure 320, for example, any shape such as a circle, an ellipse, a triangle, or a hexagon can be adopted.

[0048] Such an LED substrate 30 makes the protruding direction of the structure 320 toward the driving circuit substrate 20, such as Figure 2 As shown, it is bonded to the drive circuit substrate 20.

[0049] One side of the pixel electrode 221 is 3 μm, and one side of the buffer layer 231 exposed in the opening Ap of the insulating layer 241 is slightly shorter than the pixel electrode 221. However, when the driving circuit substrate 20 and the LED substrate 30 are bonded together, one buffer layer 231 necessarily includes a plurality of structures 320. Figure 6 The outer edge of the buffer layer 231 is indicated by a dotted line.

[0050] In a plan view, a structure 320 partially or entirely included in the buffer layer 231 among the plurality of structures 320 after lamination is labeled 320a, and a structure 320 not included in the buffer layer 231 is labeled 320b. The structure 320a is an example of a first structure, and the structure 320b is an example of a second structure.

[0051] When the LED substrate 30 is attached to the driving circuit substrate 20, the Au film of the outermost layer of the electrode 327 of the structure 320a contacts the Au film of the outermost layer of the buffer layer 231, and the electrode 327 of the structure 320a is electrically connected to the buffer layer 231. Therefore, in the structure 320a, the current corresponding to the grayscale is supplied to the structure 320a in sequence through the driving circuit 202, the plug 206, the reflective layer 204, the plug 214, the pixel electrode 221 and the buffer layer 231. Therefore, the light-emitting functional layer 325 of the structure 320a functions as a light-emitting body that emits light according to the grayscale in the pixel corresponding to the pixel electrode 221.

[0052] In addition, among the light emitted from the light emitting functional layer 325 , the light that is emitted in the direction opposite to the Z direction is reflected by the reflective layer 204 and emitted in the Z direction.

[0053] On the other hand, during lamination, the Au film of the outermost layer in the electrode 327 of the structure 320b is not in contact with any member, or is in contact with the portion 241b of the insulating layer 241. Therefore, no current is supplied from the pixel electrode 221 to the structure 320b, and thus the structure 320b becomes a non-luminous body.

[0054] In a structure where the structure 230 is provided in a one-to-one correspondence with the pixel electrode 221, high positional accuracy is required when bonding the driving circuit substrate 20 to the LED substrate 30. In particular, if the pixel electrode 221 is about several μm, the two substrates must be aligned with even finer sub-micron accuracy.

[0055] Due to the difference in the amount of warping and the direction of warping generated in the two substrates, the relative positions of the two substrates may sometimes shift in the plane. In this case, elements such as microlenses that are arranged to match the arrangement pattern of the pixel electrodes 221 in the drive circuit substrate 20 may shift, which may lead to a reduction in display quality.

[0056] In addition, when the micro LED is separated and cut into components for each pixel, the luminous efficiency may be reduced. Specifically, if the components are separated by dry etching using a reactive gas, the micro LED is damaged by the reactive gas, and the luminous efficiency is reduced.

[0057] In contrast, in the present embodiment, even if the LED substrate 30 is displaced in the X direction or Y direction relative to the driving circuit substrate 20 or is displaced by rotation during lamination, the situation that a plurality of structures 320 are necessarily included in one buffer layer 231 remains unchanged. Therefore, in the present embodiment, even if miniaturization is developed during lamination of the driving circuit substrate 20 and the LED substrate 30, high positional accuracy is not required.

[0058] In addition, in this embodiment, positional deviation when the driving circuit substrate 20 and the LED substrate 30 are bonded together does not become a problem, so even if there are elements separately provided to match the arrangement pattern of the pixel electrodes 221, it is possible to suppress degradation of display quality.

[0059] Furthermore, in the present embodiment, since LED element separation is not performed, a decrease in light emission efficiency due to damage does not occur.

[0060] If the substrates 200 and 300 are Si substrates, the electro-optical device 10 of the embodiment can be manufactured using existing semiconductor manufacturing equipment.

[0061] The above-described embodiment can be variously modified or applied as follows.

[0062] In the embodiment, the light emitting functional layer 325 of the structure 320 is horizontal with respect to the substrate surface of the substrate 300 , that is, the XY plane, but may be convex in the Z direction, for example.

[0063] In the embodiment, the LED substrate 30 is peeled off after being attached to the driving circuit substrate 20 , but it may be configured not to be peeled off. Specifically, when the substrate 300 is transparent, light from the light emitting functional layer 325 passes through the substrate 300 and is emitted in the Z direction.

[0064] In addition, the substrate 200 may be a transparent glass substrate instead of a Si substrate. If the substrate 200 is a glass substrate, even if the substrate 300 is a Si substrate, there is no need to peel off the substrate 300 after bonding. In addition, when the substrate 200 is a glass substrate and the substrate 300 is a Si substrate, the reflective layer 204 is not provided in the driving circuit substrate 20, and the light from the light-emitting functional layer 325 is emitted from the opposite direction of the Z direction, that is, from the substrate 200.

[0065] In addition, in the embodiment, strict positional accuracy is not required in the bonding of the driving circuit substrate 20 and the LED substrate 30, so the shape of the substrate 200 and the top view shape of the substrate 300 do not need to be a disk (wafer) shape, and there is no restriction, so for example, it can also be a rectangular shape. After the driving circuit substrate 20 or the LED substrate 30 is formed in plurality on a large-sized substrate, a rectangular shape is cut out by cutting after bonding, but if the substrate 200 or 300 is a disk, the wasted area (dead space) becomes more. If the substrate 200 or 300 is a rectangular shape, the wasted area can be suppressed to a smaller extent.

[0066] Next, an electronic device to which the electro-optical device 10 of the embodiment is applied will be described. The electro-optical device 10 is suitable for use in a display with small pixels and high definition. Therefore, a head mounted display will be described as an example of the electronic device.

[0067] Figure 7 is a diagram showing the appearance of a head mounted display. Figure 8 This is a diagram showing its optical structure.

[0068] First, if Figure 7 As shown in FIG. 4 , the head mounted display 400 has temples 410, a nose bridge 420, and lenses 401L and 401R similar to ordinary glasses in appearance. Figure 8 As shown, the head mounted display 400 is provided with an electro-optical device 10L for the left eye and an electro-optical device 10R for the right eye near the nose bridge 420 and on the back side (lower side in the figure) of the lenses 401L and 401R.

[0069] The image display surface of the electro-optical device 10L is Figure 8 The image display surface of the electro-optical device 10R is arranged on the right side opposite to the electro-optical device 10L. Thus, the image display of the electro-optical device 10R is emitted in the direction of 3 o'clock in the figure via the optical lens 402R. The half-mirror 403R reflects the image display of the electro-optical device 10R in the direction of 6 o'clock, and on the other hand, allows light incident from the direction of 12 o'clock to pass through.

[0070] In this configuration, the wearer of the head mounted display 400 can observe the display images of the electro-optical devices 10L and 10R in a see-through state superimposed on the external scene.

[0071] In the head mounted display 400 , if the electro-optical device 10L displays the left eye image and the electro-optical device 10R displays the right eye image in binocular images with parallax, the wearer can perceive the displayed images as if they have depth and three-dimensionality.

[0072] In addition, the electronic device including the electro-optical device 10 can be applied to electronic viewfinders in video cameras or digital cameras with interchangeable lenses, smart watches, display units of wearable devices, light valves of projection projectors, etc., in addition to the head-mounted display 400. In addition, it is not limited to the display unit, and can also be applied to surface light-emitting elements having a matrix-shaped light source, specifically, it can also be applied to backlight sources, optical communication elements, etc.

[0073] According to the above-exemplified aspects, for example, the following aspects can be understood.

[0074] An electro-optical device of method 1 comprises: a first electrode; a plurality of structures comprising: a first semiconductor layer of a first conductivity type electrically connected to the first electrode; a second semiconductor layer of a second conductivity type; and a light-emitting functional layer disposed between the first semiconductor layer and the second semiconductor layer and capable of emitting light by injecting current; and a substrate comprising a second electrode and a driving circuit electrically connected to the second electrode, the plurality of structures comprising: a first structure disposed at a position overlapping with the second electrode when viewed from above, the second electrode being electrically connected to the second semiconductor layer of the first structure; and a second structure disposed at a position not overlapping with the second electrode when viewed from above, the second electrode being not electrically connected to the second semiconductor layer of the second structure.

[0075] According to the electro-optical device of mode 1, among the plurality of structures, when viewed from above, the first structure included in the second electrode functions as a light emitting body, and the second structure not included in the second electrode does not function as a light emitting body, so strict alignment is not required between the second electrode and the plurality of structures. In addition, the array shape refers to a two-dimensional regular arrangement such as a matrix shape or a triangular shape.

[0076] In the electro-optical device of specific aspect 2 of aspect 1, a conductive buffer layer is provided on the substrate, and the buffer layer is located between the second electrode and the second semiconductor layer. According to the electro-optical device of aspect 2, the buffer layer can absorb impact when the substrate and the plurality of structures are bonded.

[0077] In the electro-optical device of a specific embodiment 3 of the embodiment 2, an insulating layer is provided on the substrate, the insulating layer covers the periphery of the second electrode when viewed from above and is opened at the second electrode. According to the electro-optical device of embodiment 3, since the insulating layer is provided at the portion other than the opening of the second electrode when viewed from above, the first structure that functions as a light emitting body and the second structure that does not function as a light emitting body can be clearly separated.

[0078] In the electro-optical device of specific embodiment 4 of embodiment 3, the buffer layer is provided within the range of the opening of the insulating layer when viewed from above. According to the electro-optical device of embodiment 4, the buffer layer is provided within the range of the opening of the insulating layer when viewed from above, so that among the plurality of structures, the structure that overlaps with the buffer layer when viewed from above can be regarded as the first structure.

[0079] In the electro-optical device of a specific aspect 5 of aspect 4, the insulating layer is in contact with at least one of the second structures. In the electro-optical device of aspect 5, even if the insulating layer is in contact with the second structure, the second structure does not function as a light emitting body.

[0080] In the electro-optical device of another specific embodiment 6 of embodiment 1, a light shielding layer is provided between the driving circuit and the second electrode when viewed in cross section. According to the electro-optical device of embodiment 6, since the light emitted from the first structure is shielded by the light shielding layer before reaching the driving circuit, it is possible to suppress performance degradation caused by light leakage in the driving circuit.

[0081] An electronic device according to aspect 7 includes the electro-optical device according to any one of aspects 1 to 6.

Claims

1. An electro-optical device comprising: 1st electrode; A plurality of structures, comprising: a first semiconductor layer of a first conductivity type, which is electrically connected to the first electrode; and a second semiconductor layer of a second conductivity type; and a light-emitting functional layer, which is disposed between the first semiconductor layer and the second semiconductor layer and can emit light by injecting current; as well as a substrate including a second electrode and a driving circuit electrically connected to the second electrode, The plurality of structures include: a first structure provided at a position overlapping with the second electrode in a plan view, the second electrode being electrically connected to the second semiconductor layer of the first structure; as well as The second structure is provided at a position not overlapping with the second electrode in a plan view, and the second electrode is not electrically connected to the second semiconductor layer of the second structure.

2. The electro-optical device according to claim 1, wherein: A conductive buffer layer is provided on the substrate. The buffer layer is located between the second electrode and the second semiconductor layer.

3. The electro-optical device according to claim 2, wherein: An insulating layer is provided on the substrate, The insulating layer covers the periphery of the second electrode in a plan view and has an opening at the second electrode.

4. The electro-optical device according to claim 3, wherein: The buffer layer is provided within the range of the opening portion of the insulating layer in a plan view.

5. The electro-optical device according to claim 4, wherein: The insulating layer is in contact with at least one of the second structures.

6. The electro-optical device according to claim 1, wherein: In cross-sectional view, a light shielding layer is provided between the driving circuit and the second electrode. 7 . An electronic device comprising the electro-optical device according to claim 1 .

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