Display device and method of manufacturing same

Abstract

A display device and a method of manufacturing the display device may include a sub-pixel portion disposed on a base layer and may include a light emitting element region where a light emitting element may be disposed and a sub-pixel region. The light emitting element region and the sub-pixel region may not overlap each other in a plan view.

Description

[0001] This application claims the priority of Korean Patent Application No. 10-2023-0125355 filed in the Korean Intellectual Property Office on September 20, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present invention relates to a display device and a method of manufacturing the display device. Background Art

[0003] Recently, as interest in information display increases, research and development of display devices are being conducted. The display device may include pixels including light emitting elements.

[0004] As the application fields of display devices are further expanded, the size of light emitting elements applied to the display devices may be reduced to realize high-performance display devices.

[0005] In the case where the size of the light emitting element is reduced, the difficulty of the manufacturing process may increase, and thus the process may be difficult to perform appropriately. There may be a concern that the process cost will increase because an additional process is also required. Summary of the invention

[0006] The disclosed aspects provide a display device and a method of manufacturing the display device, wherein process steps can be simplified, and thus process costs can be reduced.

[0007] Aspects of the disclosure provide a display device and a method of manufacturing the display device, in which the area of ​​an emission region where a light emitting element emits light can be enlarged.

[0008] According to the disclosed embodiment, the display device may include a sub-pixel portion, which is disposed on a substrate layer and may include a light emitting element region where a light emitting element may be disposed and a sub-pixel region. The light emitting element region and the sub-pixel region may not overlap each other in a plan view.

[0009] In an embodiment, the light emitting element region may be a non-sub-pixel region where light may not be visible.

[0010] In an embodiment, the light emitting element regions and the sub-pixel regions may be alternately arranged along a direction.

[0011] In an embodiment, the sub-pixel portion may have a rectangular shape which may include long sides and short sides in a plan view.

[0012] In an embodiment, the display device may further include a first reflective layer covering at least a portion of the light emitting element and exposing a side of the light emitting element. The first reflective layer may overlap with the light emitting element region in a plan view.

[0013] In an embodiment, a side portion of the light emitting element exposed by the first reflective layer may face the sub-pixel region.

[0014] In an embodiment, the first reflective layer may include a plurality of protrusions and a main body portion that are integrated with each other, and each of the plurality of protrusions may form a protrusion structure that may protrude from the main body portion.

[0015] In an embodiment, the display device may further include a pixel circuit layer and an element substrate, the pixel circuit layer including a substrate layer and a pixel circuit arranged on the substrate layer, the element substrate is arranged on the pixel circuit layer, the element substrate may form a substrate on which a light-emitting element may be arranged, and the element substrate may include a contact portion.

[0016] In an embodiment, the first reflective layer may be electrically connected to the light emitting element, and may be electrically connected to the pixel circuit through a contact.

[0017] In an embodiment, the display device may further include a second reflective layer disposed in the sub-pixel region, and the second reflective layer may not overlap the light emitting element in a plan view.

[0018] In an embodiment, the second reflective layer may include a reflective surface facing a light output direction of the display device.

[0019] In an embodiment, the display device may further include a color conversion layer disposed on the second reflective layer in the sub-pixel region and may include quantum dots. The color conversion layer may be adjacent to the light emitting element in a planar direction.

[0020] In an embodiment, the display device may further include a light blocking layer disposed on the light emitting element, and the light blocking layer may not overlap the sub-pixel region.

[0021] In an embodiment, the sub-pixel portion may include a first sub-pixel portion and a second sub-pixel portion disposed adjacent to each other in a plane direction. Each of the first sub-pixel portion and the second sub-pixel portion may include: a first reflective layer covering at least a side portion of the light-emitting element; and a second reflective layer disposed in the sub-pixel region. Light emitted from the light-emitting element included in the first sub-pixel portion may be guided in a light output direction of the display device through the first reflective layer of the first sub-pixel portion, the first reflective layer of the second sub-pixel portion, and the second reflective layer of the first sub-pixel portion.

[0022] In an embodiment, the sub-pixel portion may include a first sub-pixel portion emitting light of a first color, a second sub-pixel portion emitting light of a second color, and a third sub-pixel portion emitting light of a third color. A first color conversion layer including a first quantum dot may be disposed in a sub-pixel region of the first sub-pixel portion. A second color conversion layer including a second quantum dot may be disposed in a sub-pixel region of the second sub-pixel portion. A scattering layer including a scatterer may be disposed in a sub-pixel region of the third sub-pixel portion.

[0023] In an embodiment, the sub-pixel portion may include a first sub-pixel portion emitting light of a first color, a second sub-pixel portion emitting light of a second color, and a third sub-pixel portion emitting light of a third color. The light-emitting element of the first sub-pixel portion may be a first light-emitting element emitting light of the first color. The light-emitting element of the second sub-pixel portion may be a second light-emitting element emitting light of the second color. The light-emitting element of the third sub-pixel portion may be a third light-emitting element emitting light of the third color. A scattering layer including a scatterer may be disposed in a sub-pixel region of each of the first sub-pixel portion, the second sub-pixel portion, and the third sub-pixel portion.

[0024] According to the disclosed embodiments, a display device may include: a light emitting element disposed on a base layer and in a light emitting element region; a first reflective layer covering at least a portion of the light emitting element and exposing at least another portion of the light emitting element; a second reflective layer disposed in a sub-pixel region, the sub-pixel region may be adjacent to the light emitting element region in a planar direction, the second reflective layer may include a reflective surface facing a light output direction of the display device; and a color conversion layer, which may be disposed in the sub-pixel region, the color conversion layer may include quantum dots and may be overlapped with the second reflective layer in a planar view.

[0025] According to the disclosed embodiments, a method for manufacturing a display device may include: manufacturing a light-emitting element on an element substrate; and arranging the element substrate and the light-emitting element on a pixel circuit layer. The manufacturing of the light-emitting element may include: patterning the light-emitting element on the element substrate, patterning a first reflective layer to cover a portion of the light-emitting element and expose at least another portion of the light-emitting element; and patterning a second reflective layer in an area where the light-emitting element may not be arranged.

[0026] In an embodiment, the element substrate may include a wafer for forming a light emitting element. The pixel circuit layer may include a pixel circuit. The step of arranging the element substrate and the light emitting element on the pixel circuit layer may include: forming a contact portion passing through the element substrate to electrically connect the pixel circuit to the light emitting element.

[0027] In an embodiment, the method may further include forming a color conversion layer including quantum dots on the element substrate in a region where the light emitting element may not be disposed. The light emitting element and the first reflective layer may form a bank structure for forming the color conversion layer.

[0028] According to the disclosed embodiments, a display device and a method of manufacturing the display device may be provided, wherein process steps may be simplified and thus process costs may be reduced.

[0029] According to the disclosed embodiments, a display device and a method of manufacturing the display device can be provided, in which the area of ​​an emission region where a light emitting element emits light can be enlarged. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other features of the disclosure will become more apparent by describing the disclosed embodiments in more detail with reference to the accompanying drawings, in which: Figure 1 is a plan view showing a display device according to an embodiment; Figure 2 and Figure 3 is a schematic plan view showing a display device according to an embodiment; Figures 4 to 7 is a schematic diagram showing a display device according to an embodiment; Figure 8 is a schematic diagram showing a display device according to an embodiment; Fig. 9 and Fig.10 is a schematic diagram showing a display device according to an embodiment; Fig.11 is a schematic diagram showing a display device according to an embodiment; and Figures 12 to 25 is a schematic diagram for illustrating each process step of a method of manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0031] In the following description, for the purpose of explanation, many specific details are set forth to provide a comprehensive understanding of various embodiments or implementations of the invention. As used herein, "embodiment" and "implementation" are interchangeable words, which are non-limiting examples of the device or method disclosed herein. However, it is apparent that various embodiments may be practiced without these specific details or in the case of one or more equivalent arrangements. Here, various embodiments need not be exclusive, nor need they be limited to disclosure. For example, the specific shape, configuration, and characteristics of the embodiments may be used or implemented in other embodiments.

[0032] Unless otherwise specified, the embodiments shown should be understood to provide the features of the invention. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects of the various embodiments (hereinafter individually or collectively referred to as "elements") can be further combined, separated, interchanged and / or rearranged without departing from the inventive concept.

[0033] The use of cross hatching and / or shadows in the drawings is generally provided for making the boundaries between adjacent elements clear. Thus, unless otherwise specified, the presence and absence of cross hatching or shadows do not convey or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the shown elements and / or any other characteristics, attributes, properties, etc. of the element. In addition, in the drawings, for the purpose of clarity and / or descriptiveness, the size and relative size of the element can be exaggerated. When the embodiment can be implemented differently, the specific process sequence can be performed in a different order than described. For example, two processes described in succession can be performed substantially simultaneously or two processes described in succession can be performed in an order opposite to the described order. In addition, the same reference numerals and / or figure characters indicate the same element.

[0034] When an element, such as a layer, is referred to as being "on," "connected to," or "bonded to" another element or layer, the element may be directly on, directly connected to, or directly bonded to the other element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly bonded to" another element or layer, there are no intervening elements or layers. For this purpose, the term "connected" may refer to a physical connection, an electrical connection, and / or a fluid connection with or without intervening elements. In addition, the X-axis, Y-axis, and Z-axis are not limited to the three axes of a rectangular coordinate system, and may be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.

[0035] For the purpose of this disclosure, "at least one of A and B" may be interpreted as only A, only B, or any combination of A and B. In addition, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0036] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the disclosed teachings, the first element discussed below may be referred to as the second element.

[0037] For descriptive purposes, spatially relative terms such as "under," "below," "below," "down," "above," "up," "above," "higher," "side" (e.g., as in "sidewall"), etc., may be used herein to describe the relationship of one element to another (other) element as shown in the figures. Spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the drawings. For example, if the device in the drawings is turned over, an element described as "under" or "beneath" other elements or features will then be oriented "above" the other elements or features. Thus, the term "under" may include both above and below orientations. In addition, the device may be otherwise oriented (e.g., rotated 90 degrees or in other orientations), and as such, the spatially relative descriptors used herein are interpreted accordingly.

[0038] The terms used here are for the purpose of describing specific embodiments, and are not intended to be limiting. As used here, unless the context clearly indicates otherwise, the singular forms "one", "one (kind / person)" and "said (the)" are also intended to include plural forms. In addition, when the terms "include", "comprise" and / or its variations are used in this specification, it is explained that there are stated features, integral bodies, steps, operations, elements, components and / or their groups, but it is not excluded that there are or add one or more other features, integral bodies, steps, operations, elements, components and / or their groups. It should also be noted that, as used here, the terms "substantially", "approximately" and other similar terms are used as approximate terms, and not as degree terms, so that they are used to explain the inherent deviations of measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0039] Various embodiments are described herein with reference to cross-sectional views and / or exploded views as schematic diagrams of embodiments and / or intermediate structures. As such, variations in the shapes of the diagrams due to, for example, manufacturing techniques and / or tolerances are anticipated. Therefore, the embodiments disclosed herein should not necessarily be interpreted as being limited to the shapes of the specifically illustrated regions, but will include deviations in shape due to, for example, manufacturing. In this manner, the regions illustrated in the accompanying drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and as such, no limitation is necessarily intended.

[0040] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and disclosure, and should not be interpreted in an ideal or overly formal sense unless explicitly so defined herein.

[0041] The present invention relates to a display device and a method of manufacturing the same. Hereinafter, a display device and a method of manufacturing the same according to an embodiment are described with reference to the accompanying drawings.

[0042] Figure 1 is a plan view showing a display device according to an embodiment.

[0043] Reference Figure 1 , the display device DD may be configured to output light information. For example, the display device DD may be a device for displaying a moving image or a still image, and may be applied to various devices. In a plan view, the display device DD may have a rectangular shape having a long side along a first direction DR1 and a short side along a second direction DR2 intersecting the first direction DR1. The corner where the long side of the first direction DR1 and the short side of the second direction DR2 meet may be formed as a chamfered rounded shape to have a curvature (e.g., a predetermined selectable curvature), or may be formed to have a right angle. The planar shape of the display device DD may not be limited to a quadrilateral, and may be formed as other polygons, circles, or ellipses. The display device DD may be formed to be substantially flat, but may not be limited thereto. For example, the display device DD may include a curved portion formed at the left and right ends and having a constant curvature or a variable curvature. The display device DD may be flexibly formed to be curved, bent, bent, folded, or curled.

[0044] The display device DD may further include pixels PX, scan lines extending in the first direction DR1, and data lines extending in the second direction DR2 to display an image. The pixels PX may be arranged in a matrix shape in the first direction DR1 and the second direction DR2. However, the disclosure may not be limited thereto.

[0045] The display device DD may include a display area DA and a non-display area NDA. According to an embodiment, the non-display area NDA may be disposed around the display area DA. The non-display area NDA may surround at least a portion of the display area DA.

[0046] The pixel PX may be disposed in the display area DA. The pixel PX may not be disposed in the non-display area NDA. According to an embodiment, the pixel PX may include a sub-pixel portion SPXU.

[0047] The sub-pixel portion SPXU may be referred to as a sub-pixel member.

[0048] The sub-pixel portion SPXU may be referred to as a sub-pixel structure.

[0049] The sub-pixel portion SPXU may be referred to as a sub-pixel unit.

[0050] Figure 2 and Figure 3 is a schematic plan view showing a display device according to an embodiment. Figure 2 and Figure 3 The display area DA is schematically shown, and the same area is shown. Figure 2 and Figure 3 , the positional relationship of each structure will be clearly understood.

[0051] Reference Figures 1 to 3 , a pixel PX according to an embodiment may include a sub-pixel portion SPXU. According to an embodiment, two or more sub-pixel portions SPXU may form a pixel PX (or a pixel unit).

[0052] For example, each of the pixels PX may include a sub-pixel portion SPXU. According to an embodiment, the sub-pixel portion SPXU may include a first sub-pixel portion emitting light of a first color, a second sub-pixel portion emitting light of a second color, and a third sub-pixel portion emitting light of a third color.

[0053] According to an embodiment, the light of the first color may be light of a red band. The light of the second color may be light of a green band. The light of the third color may be light of a blue band. The red band may be in the range of about 600 nm to about 750 nm, the green band may be in the range of about 480 nm to about 560 nm, and the blue band may be in the range of about 370 nm to about 460 nm. However, the disclosure may not be limited thereto.

[0054] The sub-pixel parts SPXU may be arranged in various ways. For example, the sub-pixel parts SPXU may be arranged in a matrix structure based on the first direction DR1 and the second direction DR2. However, the disclosure may not be limited thereto. The arrangement structure of the sub-pixel parts SPXU may vary according to the arrangement structure of the pixel PX according to the embodiment.

[0055] The sub-pixel portion SPXU may have various shapes. For example, the sub-pixel portion SPXU may have a rectangular shape having long sides along the first direction DR1 and short sides along the second direction DR2. However, the disclosure may not be limited thereto.

[0056] According to an embodiment, in the sub-pixel portion SPXU, an area where the light emitting element LD may be disposed and an area where color light may be visible (or light is emitted from the display) may be individually defined.

[0057] For example, the sub-pixel portion SPXU may include a light emitting element region LDA and a sub-pixel region SPXA. According to an embodiment, in a plan view, the light emitting element region LDA and the sub-pixel region SPXA may not overlap each other. For example, the light emitting element region LDA and the sub-pixel region SPXA may be spaced apart from each other in the first direction DR1.

[0058] The light emitting element region LDA may be a region in which a light emitting element LD may be disposed (see Figure 5 ) region. For example, in a plan view, the light emitting element LD may overlap the light emitting element region LDA. The light emitting element region LDA may be a region where the light emitting element LD may be disposed, but light of a color may not be visible.

[0059] The sub-pixel region SPXA may be a region where the light emitting element LD may not be disposed. For example, in a plan view, the light emitting element LD may not overlap the sub-pixel region SPXA. The sub-pixel region SPXA may be a region where light of a color may be visible. According to an embodiment, light of any one of the first color, the second color, and the third color may be provided in the sub-pixel region SPXA.

[0060] For example, the sub-pixel area SPXA may include a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, the first sub-pixel area being included in a first sub-pixel portion among the sub-pixel portion SPXU and emitting light of a first color, the second sub-pixel area being included in a second sub-pixel portion among the sub-pixel portion SPXU and emitting light of a second color, and the third sub-pixel area being included in a third sub-pixel portion among the sub-pixel portion SPXU and emitting light of a third color.

[0061] According to an embodiment, the light emitting element area LDA may be sequentially arranged along the second direction DR2. The sub-pixel area SPXA may be sequentially arranged along the second direction DR2. The light emitting element area LDA and the sub-pixel area SPXA may be alternately arranged along the first direction DR1. However, the disclosure may not be limited thereto. According to the arrangement structure of the sub-pixel part SPXU, the arrangement structure of the light emitting element area LDA and the sub-pixel area SPXA may be changed differently.

[0062] According to an embodiment, the size of the light emitting element region LDA and the size of the sub-pixel region SPXA may correspond to each other. For example, the size of each of the light emitting element region LDA and the sub-pixel region SPXA may be substantially the same. However, the disclosure may not be limited thereto. For example, the size of the sub-pixel region SPXA may be larger than the size of the light emitting element region LDA, so that the size of the sub-pixel region SPXA may be expanded.

[0063] According to an embodiment, the shape of the light emitting element region LDA and the shape of the sub-pixel region SPXA may correspond to each other. For example, the shape of each of the light emitting element region LDA and the sub-pixel region SPXA may be substantially the same. However, the disclosure may not be limited thereto.

[0064] Reference Figures 4 to 7 , the display device DD according to the embodiment may be described.

[0065] Figures 4 to 7 is a schematic diagram showing a display device according to an embodiment. Figure 4 It can be shown with reference to the above Figure 2 and Figure 3 Describes the same area of ​​planar structure. Figures 2 to 4 , the arrangement relationship of each construction will be clearly understood. Figure 5 A schematic cross-sectional structure of a display device DD according to the embodiment may be shown. Figure 6 The surface structure of the first reflective layer RL may be shown. Figure 7 An optical path structure in the display device DD according to the embodiment may be shown.

[0066] Reference Figures 4 to 7 , the display device DD may include a pixel circuit layer PCL, an element base BS, a first contact portion CNT1, a second contact portion CNT2, a light emitting element LD, a first reflective layer RL, a second reflective layer QRL, a color conversion layer CCL, and a light blocking layer BM.

[0067] The pixel circuit layer PCL may be a layer including a pixel circuit PXC for driving the light emitting element LD. The pixel circuit layer PCL may include a base layer BSL, a conductive layer for forming the pixel circuit, and an insulating layer disposed between the conductive layers.

[0068] The base layer BSL may form a base on which the pixel circuit PXC may be disposed. The base layer BSL may be a substrate or an insulating layer that may include various materials. For example, the base layer BSL may include a glass material. As another example, the base layer BSL may include polyimide. However, the disclosure may not be limited thereto.

[0069] The pixel circuit layer PCL may include a backplane substrate.

[0070] According to an embodiment, the pixel circuit PXC may include a thin film transistor, and may be electrically connected to the light emitting element LD to provide an electrical signal for the light emitting element LD to emit light.

[0071] The element base BS may be disposed on the pixel circuit layer PCL (eg, base layer BSL). The element base BS may form a base on which the light emitting element LD and the color conversion layer CCL may be disposed.

[0072] The element base BS may be a wafer for forming (eg, growing (eg, epitaxially growing)) the light emitting element LD. For example, the element base BS may include a sapphire substrate or a silicon material. However, the disclosure may not be limited to a specific example.

[0073] According to an embodiment, an element base BS provided for patterning the light emitting element LD may be disposed (eg, directly disposed) on the pixel circuit layer PCL (eg, the base layer BSL).

[0074] The first contact portion CNT1 and the second contact portion CNT2 may be formed on the element base BS. For example, the first contact portion CNT1 and the second contact portion CNT2 may pass through a portion of the element base BS.

[0075] The first contact portion CNT1 may include a conductive material and may be electrically connected to the first reflective layer RL. The first contact portion CNT1 may electrically connect the pixel circuit PXC and the first reflective layer RL.

[0076] The second contact portion CNT2 may include a conductive material and may be electrically connected to the first semiconductor layer SCL1 . The second contact portion CNT2 may electrically connect a power line (eg, a ground power line (not shown)) included in the pixel circuit layer PCL and the first semiconductor layer SCL1 .

[0077] The light emitting element LD may be disposed on the element base BS. The light emitting element LD may be disposed on the pixel circuit layer PCL (eg, the base layer BSL).

[0078] The light emitting element LD may be configured to emit light. According to an embodiment, the light emitting element LD may include an inorganic semiconductor material. For example, the light emitting element LD may include a semiconductor stack member SSM. The semiconductor stack member SSM may include a first semiconductor layer SCL1, a second semiconductor layer SCL2, and an active layer AL.

[0079] The first semiconductor layer SCL1 may include a semiconductor layer of a different type from that of the second semiconductor layer SCL2. For example, the first semiconductor layer SCL1 may include an N-type semiconductor. The first semiconductor layer SCL1 may include a GaN-based material. For example, the first semiconductor layer SCL1 may include one or more selected from the group of InAlGaN, GaN, AlGaN, and InGaN, and may include an N-type semiconductor layer doped with a first conductive type dopant such as Si, Ge, and Sn.

[0080] The active layer AL may be disposed between the first semiconductor layer SCL1 and the second semiconductor layer SCL2. The active layer AL may include a single quantum well structure or a multi-quantum well structure.

[0081] The active layer AL may include a well layer and a barrier layer for forming a quantum well structure. For example, the active layer AL may include InGaN as the well layer, and the active layer AL may include GaN as the barrier layer.

[0082] The second semiconductor layer SCL2 may include a semiconductor layer of a different type from the first semiconductor layer SCL1. For example, the second semiconductor layer SCL2 may include a P-type semiconductor. The second semiconductor layer SCL2 may include a GaN-based material. For example, the second semiconductor layer SCL2 may include one or more selected from the group of InAlGaN, GaN, AlGaN, and InGaN, and may include a P-type semiconductor layer doped with a second conductive type dopant such as Ga, B, and Mg.

[0083] According to an embodiment, the light emitting element LD may further include an electrode layer ELL and an insulating layer INF.

[0084] The electrode layer ELL may be disposed on the semiconductor stack member SSM. According to an embodiment, the electrode layer ELL may be disposed in the light emitting element area LDA.

[0085] The electrode layer ELL may be electrically connected to the second semiconductor layer SCL2. The electrode layer ELL may be electrically connected to the first reflective layer RL. Therefore, the semiconductor stack member SSM may be electrically connected to the pixel circuit PXC through the electrode layer ELL and the first reflective layer RL.

[0086] The upper surface of the electrode layer ELL may be covered by the first reflective layer RL. According to an embodiment, in a plan view, the electrode layer ELL may be completely covered by the first reflective layer RL. According to an embodiment, the side surface of the electrode layer ELL may be covered by the first reflective layer RL, and the other side surface of the electrode layer ELL may be exposed by the first reflective layer RL.

[0087] The electrode layer ELL may include a conductive material. For example, the electrode layer ELL may include indium tin oxide (ITO). However, the disclosure may not be limited thereto.

[0088] The insulating layer INF may be disposed on a side surface of the semiconductor stack member SSM. For example, the insulating layer INF may cover a side surface of each of the first semiconductor layer SCL1, the second semiconductor layer SCL2, and the active layer AL.

[0089] A portion of the insulating layer INF may be covered by the first reflective layer RL, and another portion of the insulating layer INF may be exposed by the first reflective layer RL.

[0090] The insulating layer INF may include an insulating material. For example, the insulating layer INF may include silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and aluminum oxide (Al x O y ) in the group of one or more. However, the disclosure may not necessarily be limited to the above examples.

[0091] In a plan view, the light emitting element LD may not overlap the second reflective layer QRL. The light emitting element LD may be adjacent to the second reflective layer QRL in a planar direction (e.g., a horizontal direction such as the first direction DR1, the second direction DR2, or a combination of the first direction DR1 and the second direction DR2). In a plan view, the light emitting element LD may overlap the first reflective layer RL. The light emitting element LD may be adjacent to the first reflective layer RL in a planar direction (e.g., a horizontal direction).

[0092] The light emitting element LD may be disposed in the light emitting element area LDA. The light emitting element LD may not be disposed in the sub-pixel area SPXA. In a plan view, the light emitting element LD may overlap with the light blocking layer BM. According to an embodiment, light of one color may not be visible in the area where the light emitting element LD is disposed. Therefore, the light emitting element area LDA may be disposed in the non-sub-pixel area NSPXA.

[0093] The light emitting element LD may be disposed between adjacent sub-pixel regions SPXA. For example, a sub-pixel region SPXA may be formed on one side of the light emitting element LD, and another sub-pixel region SPXA may be formed on the other side of the light emitting element LD.

[0094] The first reflective layer RL may be disposed on the element base BS. In a plan view, the first reflective layer RL may overlap the light emitting element area LDA. Therefore, in a plan view, the first reflective layer RL may overlap the non-sub-pixel area NSPXA. According to an embodiment, a portion of the first reflective layer RL may be disposed in the sub-pixel area SPXA.

[0095] The first reflective layer RL may be configured to reflect light. The first reflective layer RL may guide a moving path of light emitted from the light emitting element LD. The first reflective layer RL may recycle light in a light output direction.

[0096] The first reflective layer RL may include a reflective material. The first reflective layer RL may include at least one of various metal materials including gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), platinum (Pt), etc., or may include an alloy thereof.

[0097] The first reflective layer RL may expose a portion of the light emitting element LD and may cover other portions of the light emitting element LD. For example, the first reflective layer RL may surround other surfaces of the light emitting element LD except for a surface of the light emitting element LD facing the adjacent sub-pixel area SPXA.

[0098] The first reflective layer RL may cover at least a portion of a side of the light emitting element LD. The first reflective layer RL may expose a portion of a side of the light emitting element LD. The first reflective layer RL may cover an upper portion of the light emitting element LD (e.g., an upper surface of the electrode layer ELL). The first reflective layer RL may include a reflective wall extending in a thickness direction (e.g., a third direction DR3) of the element base BS. The first reflective layer RL may include a reflective wall extending in a plane direction (e.g., a plane defined based on the first direction DR1 and the second direction DR2) of the element base BS.

[0099] According to the embodiment (refer to Figure 6 ), the first reflective layer RL may include an uneven surface. According to an embodiment, the surface of the first reflective layer RL may have a step-shaped structure or a zigzag structure, etc. For example, the first reflective layer RL may include a main body part BO and a protrusion PRU that are integral with each other. According to an embodiment, the protrusion PRU may form a structure protruding from the main body part BO. The protrusion PRU may include a plurality of protrusions, and the first reflective layer RL may form an uneven surface to diffusely reflect the applied light. Therefore, the light recycling effect of the first reflective layer RL may be further increased.

[0100] The second reflective layer QRL may be disposed on the element base BS. The second reflective layer QRL may be disposed in the sub-pixel area SPXA. The second reflective layer QRL may not be disposed in the light emitting element area LDA.

[0101] The second reflective layer QRL may be configured to reflect light. The second reflective layer QRL may guide a moving path of light emitted from the light emitting element LD. The second reflective layer QRL may recycle light in a light output direction.

[0102] The second reflective layer QRL may include a reflective material. For example, the second reflective layer QRL may include at least one of various metal materials including gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), platinum (Pt), etc., or may include an alloy thereof.

[0103] The second reflective layer QRL may include a reflective wall extending in a plane direction of the element base BS (eg, a plane defined based on the first direction DR1 and the second direction DR2). For example, the second reflective layer QRL may include a reflective surface facing a light output direction (eg, a third direction DR3) of the display device DD.

[0104] According to the embodiment, a finely designed light guide structure may be formed in sub-pixel parts SPXU adjacent to each other, and a display device DD having improved light efficiency may be provided.

[0105] For example, the sub-pixel portion SPXU may include a first sub-pixel portion SPXU1 and a second sub-pixel portion SPXU2 (see Figure 7 ). The light guiding structure of the first sub-pixel portion SPXU1 may be described in conjunction with a partial structure of the second sub-pixel portion SPXU2.

[0106] The first sub-pixel portion SPXU1 may include a light emitting element region LDA and a sub-pixel region SPXA. As described above, since the light emitting element region LDA and the sub-pixel region SPXA may be alternately arranged along a direction, the light emitting element region LDA of the second sub-pixel portion SPXU2 may be arranged on one side of the sub-pixel region SPXA of the first sub-pixel portion SPXU1. The light emitting element region LDA may be arranged on both sides of the sub-pixel region SPXA of the first sub-pixel portion SPXU1. The light emitting element LD may be arranged in the light emitting element region LDA, and the first reflective layer RL may be arranged on the side of the light emitting element LD.

[0107] Therefore, the first reflective layer RL surrounding the light emitting element LD of the first sub-pixel portion SPXU1 can guide the light emitted from the light emitting element LD of the first sub-pixel portion SPXU1 so that the light faces the sub-pixel area SPXA of the first sub-pixel portion SPXU1. The first reflective layer RL surrounding the light emitting element LD of the second sub-pixel portion SPXU2 can guide the light facing the second sub-pixel portion SPXU2 in the sub-pixel area SPXA of the first sub-pixel portion SPXU1 so that the light faces the sub-pixel area SPXA of the first sub-pixel portion SPXU1.

[0108] The second reflective layer QRL included in the first sub-pixel portion SPXU1 may reflect light applied in the sub-pixel area SPXA in a light output direction (eg, the third direction DR3 ) of the display device DD.

[0109] Finally, in addition to the arrangement structure of the light emitting element area LDA and the sub-pixel area SPXA, the first reflective layer RL and the second reflective layer QRL can be patterned at a position where a light recycling structure is implemented, thereby providing a display device DD with high light efficiency. Since the light emitting area visible from the outside can be defined based on the sub-pixel area SPXA, the light emitting area can be further expanded by controlling the area of ​​the sub-pixel area SPXA if necessary.

[0110] The color conversion layer CCL may be disposed on the element base BS in an area where the light emitting element LD may not be disposed. The color conversion layer CCL may be disposed in the sub-pixel area SPXA. The color conversion layer CCL may overlap with the light emitting element LD in a planar direction. The color conversion layer CCL may not be disposed in the light emitting element area LDA. In a plan view, the color conversion layer CCL may not overlap with the light blocking layer BM. In a plan view, the color conversion layer CCL may overlap with the second reflective layer QRL.

[0111] The color conversion layer CCL may be configured to change the wavelength of light. The color conversion layer CCL may include a first color conversion layer included in a first sub-pixel portion SPXU1 among the sub-pixel portions SPXU, and a second color conversion layer included in a second sub-pixel portion SPXU2 among the sub-pixel portions SPXU. According to an embodiment, a scatterer SC (refer to Figure 8 ) of the scattering layer SCT (reference Figure 8 ) may be disposed in a sub-pixel area SPXA in a third sub-pixel portion included in the sub-pixel portion SPXU.

[0112] According to an embodiment, the light emitting element of each of the sub-pixel parts SPXU may emit light of the same color (eg, the third color). In this case, since the color conversion layer CCL may be provided in a portion of the sub-pixel part SPXU, a full-color image may be displayed.

[0113] According to an embodiment, the color conversion layer CCL may include quantum dots QD that convert light emitted from the light emitting element LD into color light. The quantum dots QD may be dispersed in a matrix material such as a matrix resin, and the color conversion layer CCL may be produced.

[0114] According to an embodiment, the quantum dot QD may include a first quantum dot included in a first color conversion layer and a second quantum dot included in a second color conversion layer. The first quantum dot may absorb light of a third color and shift the wavelength according to energy transition to emit light of the first color. The second quantum dot may absorb light of a third color and shift the wavelength according to energy transition to emit light of the second color.

[0115] A scattering layer SCT may be provided to effectively use the light of the third color emitted from the light emitting element LD. According to an embodiment, the scattering layer SCT may include a scatterer SC and scatter the applied light. The scatterer SC may include various light scattering particles or light scattering materials. For example, the scatterer may include, for example, silicon oxide (SiO x ) (for example, silicon oxide spheres or hollow silicon oxide, etc.), titanium oxide (TiO x )、ZrO x )、Alumina(Al x O y )、Indium oxide(In x O x )、ZnO x )、Tin Oxide(SnO x ) and antimony oxide (Sb x O x ) in the group of one or more. However, the disclosure may not be limited thereto.

[0116] According to an embodiment, the color conversion layer CCL may be adjacent to the light emitting element LD in a horizontal direction. The color conversion layer CCL may not overlap the light emitting element LD in a thickness direction (eg, third direction DR3) of the element base BS, and may provide an effect of reducing the thickness of the display device DD.

[0117] In order to experimentally pattern the color conversion layer CCL, a bank structure that can accommodate the color conversion layer CCL may be separately required, but according to the embodiment, since the light emitting element LD and the first reflective layer RL can perform the role of the bank, the process steps may be simplified.

[0118] The light blocking layer BM may be disposed on the first reflective layer RL. The light blocking layer BM may be disposed on the light emitting element LD. In a plan view, the light blocking layer BM may not overlap the sub-pixel area SPXA. The light blocking layer BM may be disposed in the light emitting element area LDA.

[0119] The light blocking layer BM may overlap the first reflective layer RL in a plan view. The light blocking layer BM may not overlap the second reflective layer QRL in a plan view. The light blocking layer BM may not overlap the color conversion layer CCL in a planar direction.

[0120] The light blocking layer BM can prevent color mixing defects visible from the front surface or side surface of the display device DD. The material of the light blocking layer BM may not be particularly limited and may be composed of various light blocking materials. For example, the light blocking layer BM may include a black matrix. However, the disclosure may not be limited thereto.

[0121] According to an embodiment, the light blocking layer BM may have a light blocking thickness BT. The light blocking thickness BT may be in a range of about 1 μm to about 5 μm. According to an embodiment, the light blocking thickness BT may be in a range of about 2 μm to about 4 μm. However, the disclosure may not be limited thereto.

[0122] According to an embodiment, the light blocking layer BM may not perform the role of a bank for accommodating the color conversion layer CCL. Therefore, the necessity of patterning the light blocking layer BM to have an excessive thickness may be reduced, and the light blocking layer BM may be manufactured to have the above-mentioned light blocking thickness BT.

[0123] Although not shown in the drawings, according to embodiments, a cover layer covering the color conversion layer CCL and including an inorganic material may be further included. According to embodiments, the display device DD may further include a color filter overlapped with the sub-pixel area SPXA, and may further include a window capable of transmitting light.

[0124] Reference Figure 8 , a display device DD according to an embodiment is described. For the convenience of description, contents that may overlap with the above contents are briefly described or not repeated.

[0125] Figure 8 is a schematic diagram showing a display device according to an embodiment. Figure 8 A schematic cross-sectional structure of a display device DD according to the embodiment may be shown. Figure 8 It can be shown that Figure 5 The corresponding schematic cross-sectional structure.

[0126] The display device DD according to the embodiment may be different from the display device DD according to the above-described embodiment in that a scattering layer SCT may be provided in each of the sub-pixel areas SPXA without including a color conversion layer CCL.

[0127] According to an embodiment, the light emitting element LD may include a first light emitting element included in a first sub-pixel portion among the sub-pixel portion SPXU and configured to emit light of a first color, a second light emitting element included in a second sub-pixel portion among the sub-pixel portion SPXU and configured to emit light of a second color, and a third light emitting element included in a third sub-pixel portion among the sub-pixel portion SPXU and configured to emit light of a third color. For example, each of the light emitting elements LD may be configured to emit light of a first color, a second color, or a third color, so each of the light emitting elements LD may generate a self-emitting element capable of realizing a full-color image.

[0128] Therefore, a scattering layer SCT including a scatterer SC may be disposed in the sub-pixel area SPXA of each of the sub-pixel parts SPXU. As described above, the scattering layer SCT may improve the efficiency of light emitted from the light emitting element LD.

[0129] Reference Fig. 9 and Fig.10 , a display device DD according to an embodiment is described. For convenience of description, contents that may overlap with the above contents are briefly described or may not be repeated.

[0130] Fig. 9 and Fig.10 is a schematic diagram showing a display device according to an embodiment. Fig. 9 It can be shown with reference to the above Figure 2 and Figure 3 Same area as described in floor plan. Fig. 9 It can be shown that Figure 4 The corresponding floor plan. Fig.10 A schematic cross-sectional structure of a display device DD according to the embodiment may be shown. Fig.10 It can be shown that Figure 5 and Figure 8 The corresponding schematic cross-sectional structure.

[0131] The display device DD according to the embodiment may be different from the display device DD according to the above-described embodiments in that the display device DD according to the embodiment does not include the light blocking layer BM.

[0132] For example, according to an embodiment, the light blocking layer BM may not be included. According to an embodiment, although the light blocking layer BM is not included, an area other than the sub-pixel area SPXA in the display area DA may be covered by the first reflective layer RL, and thus a non-sub-pixel area NSPXA may be defined. According to an embodiment, since the process steps are simplified, the process cost may be reduced.

[0133] According to an embodiment, the display device DD may further include a lens part LEN. The lens part LEN may be disposed in the sub-pixel area SPXA. The lens part LEN may not be disposed in the light emitting element area LDA. The lens part LEN may overlap with the second reflective layer QRL in a plan view. The lens part LEN may improve display quality by controlling the output path of light.

[0134] Reference Fig.11 , a display device DD according to an embodiment is described. For the convenience of description, contents that may overlap with the above contents are briefly described or not repeated.

[0135] Fig.11 is a schematic diagram showing a display device according to an embodiment. Fig.11 A schematic cross-sectional structure of a display device DD according to the embodiment may be shown. Fig.11 It can be shown that Figure 5 , Figure 8 and Fig.10 The corresponding schematic cross-sectional structure.

[0136] The display device DD according to the embodiment is different from the display device DD according to the above-described embodiments in that a filling layer FIL may be disposed in a region corresponding to the color conversion layer CCL or the scattering layer SCT.

[0137] The filling layer FIL may be disposed in the sub-pixel area SPXA. The filling layer FIL may not be disposed in the light emitting element area LDA. The filling layer FIL may overlap with the second reflective layer QRL in a plan view. The filling layer FIL may fill the area between the light emitting elements LD.

[0138] Reference Figures 12 to 25 A method of manufacturing a display device according to an embodiment is described. For ease of description, contents that may overlap with the above contents are briefly described or not repeated.

[0139] For ease of description, the description is based on reference Figures 4 to 7 The manufacturing method of the display device DD of the above-mentioned embodiment is described, and technical features of some modified embodiments are also described.

[0140] Figures 12 to 25 is a schematic diagram for illustrating each process step of a method of manufacturing a display device according to an embodiment.

[0141] Figures 12 to 19 Detailed description may be given below. Detailed description may be given below schematic cross-sectional views for illustrating each process step of a method of manufacturing the display device DD according to the embodiment. Figure 20 to Figure 25 1 may be a schematic plan view for illustrating each process step of the method for manufacturing the display device DD according to the embodiment. In other words, Figure 20 to Figure 25 In the manufacturing process, Figures 12 to 19 Same as above, but shows the steps in the manufacturing process. Figures 12 to 19 The schematic cross-sectional view corresponds to the top view or plan view.

[0142] Figures 12 to 16 and Figure 20 to Figure 22 The steps before the light emitting element LD is provided on the pixel circuit layer PCL (eg, the base layer BSL) may be shown. Figures 17 to 19 and Figure 23 to Figure 25 The steps after the light emitting element LD is provided on the pixel circuit layer PCL (eg, the base layer BSL) may be shown.

[0143] Reference Fig.12 , a base semiconductor stack member SSM' and a base electrode ELL' may be formed on the element base BS. For example, semiconductor materials may be sequentially formed on the element base BS. The base semiconductor stack member SSM' may include a first base semiconductor layer SCL1', a base active layer AL', and a second base semiconductor layer SCL2'.

[0144] The element substrate BS may be a substrate plate for growing the object material. For example, the element substrate BS may be a wafer for epitaxial growth of the material. The element substrate BS may be a sapphire substrate and may include aluminum oxide (AlO x ). However, the disclosure may not be limited thereto.

[0145] In this step, a first base semiconductor layer SCL1 ′, a base active layer AL′, and a second base semiconductor layer SCL2 ′ may be sequentially formed (eg, epitaxially grown) on the element base BS.

[0146] The first base semiconductor layer SCL1' may include a material for forming the first semiconductor layer SCL1. The base active layer AL' may include a material for forming the active layer AL. The second base semiconductor layer SCL2' may include a material for forming the second semiconductor layer SCL2.

[0147] In this step, a base electrode ELL' may be formed (eg, deposited) on the second base semiconductor layer SCL2'. The base electrode ELL' may include a material for forming the electrode layer ELL and may be formed by a process such as sputtering. However, the disclosure may not be limited thereto.

[0148] Reference Fig.13 and Fig. 20 , the base electrode ELL' and the base semiconductor stack member SSM' may be etched.

[0149] In this step, at least a portion of the base electrode ELL' may be etched (eg, dry etched) to produce the electrode layer ELL. In this step, at least a portion of the base semiconductor stack member SSM' may be etched (eg, dry etched) to produce the semiconductor stack member SSM.

[0150] Thus, the first semiconductor layer SCL1, the active layer AL, the second semiconductor layer SCL2, and the electrode layer ELL may be sequentially stacked, and the sides of the first semiconductor layer SCL1, the active layer AL, the second semiconductor layer SCL2, and the electrode layer ELL may be exposed. Each of the semiconductor stack member SSM and the electrode layer ELL may form a portion of each of the light emitting elements LD.

[0151] Reference Fig.14 and Fig.21 , the insulating layer INF may be patterned to cover at least a portion (eg, a side portion) of the semiconductor stack member SSM and expose at least a portion of the electrode layer ELL.

[0152] For example, the insulating layer INF may be formed (or deposited) by various methods, and the insulating layer INF may be etched (eg, wet-etched). For example, in order to deposit the insulating layer INF, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, etc. may be used. However, the disclosure may not be limited thereto.

[0153] Thus, the light emitting element LD including the insulating layer INF, the electrode layer ELL, and the semiconductor stack member SSM may be prepared.

[0154] Reference Fig.15 , Fig.16 and Fig. 22 , a first base reflective layer RL′ for forming the first reflective layer RL may be formed (eg, deposited).

[0155] In order to deposit the first base reflective layer RL', a PVD process, a CVD process, etc. may be used. However, the disclosure is not limited thereto.

[0156] In the step of forming the first base reflective layer RL', the first base reflective layer RL' may cover the entire surface of the light emitting element LD. At least a portion of the first base reflective layer RL' may be etched (eg, dry etched), and the like may be produced. Fig.16 The first reflective layer RL in the embodiment of the present invention exposes at least a portion of the light emitting element LD. For example, the first reflective layer RL may expose a side surface of the light emitting element LD. Therefore, as described above, a path through which light emitted from the light emitting element LD propagates may be formed.

[0157] Reference Fig.17, a light emitting element LD and an element base BS may be disposed on the pixel circuit layer PCL.

[0158] According to an embodiment, in order to dispose the light emitting element LD on the pixel circuit layer PCL, a transfer process of a wafer-to-wafer method may be performed.

[0159] A process (eg, laser lift-off process, etc.) of separating the light emitting element LD from a wafer (eg, element base body BS) for manufacturing the light emitting element LD may not be performed. Therefore, the process steps may be simplified, the process cost may be reduced, and the element stability may be improved.

[0160] For example, in a state where the light emitting element LD is disposed on the element base BS, the light emitting element LD may be disposed on the pixel circuit layer PCL. According to an embodiment, the first contact portion CNT1 and the second contact portion CNT2 may be formed in the element base BS, and the element base BS may be disposed on the pixel circuit layer PCL including the base layer BSL and the pixel circuit PXC.

[0161] In the step of providing the light emitting element LD on the pixel circuit layer PCL, the first reflective layer RL may be electrically connected to the pixel circuit PXC through the first contact portion CNT1. Although not shown in the drawings, the first semiconductor layer SCL1 may be electrically connected to the power line formed in the pixel circuit layer PCL through the second contact portion CNT2.

[0162] Reference Fig.18 , Fig.23 and Fig.24 , the second reflective layer QRL and the light blocking layer BM may be patterned.

[0163] For example, the second reflective layer QRL may be disposed between adjacent regions where the light emitting element LD is disposed. The second reflective layer QRL may be disposed between adjacent first reflective layers RL. The light blocking layer BM may be patterned to overlap the region where the light emitting element LD is disposed.

[0164] According to an embodiment, the process of patterning the light blocking layer BM may be omitted. Since the first reflective layer RL may cover the upper surface of the light emitting element LD, a non-sub-pixel area NSPXA may be defined.

[0165] According to an embodiment, the order of the process step of patterning the second reflective layer QRL and the process step of patterning the light blocking layer BM may not be particularly limited.

[0166] Reference Fig.19 and Fig.25 , the color conversion layer CCL may be patterned. According to an embodiment, the color conversion layer CCL may be patterned by a typical photolithography process, etc. However, the disclosure may not be limited thereto.

[0167] In this step, a color conversion layer CCL may be disposed between adjacent regions where the light emitting element LD is disposed. The color conversion layer CCL may be disposed between adjacent first reflective layers RL. For example, when the color conversion layer CCL is patterned, the light emitting element LD and the first reflective layer RL may serve as a dam structure for accommodating the color conversion layer CCL.

[0168] According to the embodiment, as described above, the scattering layer SCT may be disposed between regions where the light emitting element LD may not be disposed, or according to the embodiment, the filling layer FIL may be disposed in the position of the color conversion layer CCL. According to the embodiment, a process of patterning the lens part LEN may be further performed.

[0169] Then, according to the embodiment, a process of providing a window or the like may be further performed, and the display device DD according to the embodiment may be prepared.

[0170] As described above, although the disclosure has been described with reference to the embodiments, those skilled in the art or those having ordinary skill in the art will understand that various modifications and changes may be made to the disclosure without departing from the spirit and technical field of the disclosure described in the claims.

[0171] Therefore, the disclosed technical scope should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

Claims

1. A display device, comprising: The sub-pixel portion is disposed on the substrate layer and includes a light emitting element region where the light emitting element is disposed and a sub-pixel region, The light emitting element region and the sub-pixel region do not overlap each other in a plan view.

2. The display device according to claim 1, wherein: The light emitting element region is a non-sub-pixel region where light is invisible.

3. The display device according to claim 1, wherein: The light emitting element regions and the sub-pixel regions are alternately arranged along a direction.

4. The display device according to claim 1, wherein: The sub-pixel portion has a rectangular shape including long sides and short sides in a plan view.

5. The display device according to claim 1, further comprising: a first reflective layer covering at least a portion of the light emitting element and exposing a side portion of the light emitting element, Wherein, the first reflective layer overlaps with the light emitting element region in a plan view, The side portion of the light emitting element exposed by the first reflective layer faces the sub-pixel region, The first reflective layer includes a plurality of protrusions and a main body portion that are integrated with each other, and Each of the plurality of protrusions forms a protrusion structure protruding from the body portion.

6. The display device according to claim 5, further comprising: A pixel circuit layer, comprising the substrate layer and a pixel circuit disposed on the substrate layer; as well as an element substrate, arranged on the pixel circuit layer, the element substrate forming a substrate on which the light emitting element is arranged, the element substrate including a contact portion, The first reflective layer is electrically connected to the light emitting element, and is electrically connected to the pixel circuit through the contact portion.

7. The display device according to claim 5, further comprising: A second reflective layer is disposed in the sub-pixel region, wherein the second reflective layer does not overlap with the light emitting element in a plan view. The second reflective layer includes a reflective surface facing the light output direction of the display device.

8. The display device according to claim 7, further comprising: A color conversion layer is disposed on the second reflective layer in the sub-pixel region and includes quantum dots, The color conversion layer is adjacent to the light emitting element in a planar direction.

9. The display device according to claim 1, further comprising: A light blocking layer is disposed on the light emitting element, and the light blocking layer does not overlap with the sub-pixel region.

10. The display device according to claim 1, wherein: The sub-pixel portion includes a first sub-pixel portion and a second sub-pixel portion disposed adjacent to each other in a plane direction, Each of the first sub-pixel portion and the second sub-pixel portion includes: a first reflective layer covering at least a side portion of the light emitting element; and a second reflective layer disposed in the sub-pixel region, and Light emitted from the light emitting element included in the first sub-pixel portion is guided in a light output direction of the display device through the first reflective layer of the first sub-pixel portion, the first reflective layer of the second sub-pixel portion, and the second reflective layer of the first sub-pixel portion.

11. The display device according to claim 1, wherein: The sub-pixel portions include a first sub-pixel portion emitting light of a first color, a second sub-pixel portion emitting light of a second color, and a third sub-pixel portion emitting light of a third color, A first color conversion layer including first quantum dots is disposed in the sub-pixel region of the first sub-pixel portion, A second color conversion layer including second quantum dots is disposed in the sub-pixel region of the second sub-pixel portion, and A scattering layer including a scatterer is disposed in the sub-pixel region of the third sub-pixel portion.

12. The display device according to claim 1, wherein: The sub-pixel portions include a first sub-pixel portion emitting light of a first color, a second sub-pixel portion emitting light of a second color, and a third sub-pixel portion emitting light of a third color, The light emitting element of the first sub-pixel portion is a first light emitting element that emits the light of the first color, The light emitting element of the second sub-pixel portion is a second light emitting element that emits the light of the second color, The light emitting element of the third sub-pixel portion is a third light emitting element that emits the light of the third color, and A scattering layer including a scatterer is disposed in the sub-pixel region of each of the first sub-pixel section, the second sub-pixel section, and the third sub-pixel section.

13. A display device, comprising: A light emitting element is disposed on the substrate layer and in the light emitting element region; a first reflective layer covering at least a portion of the light emitting element and exposing at least another portion of the light emitting element; A second reflective layer is disposed in a sub-pixel region, the sub-pixel region is adjacent to the light emitting element region in a planar direction, and the second reflective layer includes a reflective surface facing a light output direction of the display device; as well as A color conversion layer is disposed in the sub-pixel region, the color conversion layer includes quantum dots and overlaps the second reflective layer in a plan view.

14. A method for manufacturing a display device, the method comprising: manufacturing a light emitting element on a component substrate; as well as The element substrate and the light emitting element are arranged on the pixel circuit layer, The manufacture of the light-emitting element includes: patterning the light-emitting element on the element substrate; patterning the first reflective layer to cover a portion of the light-emitting element and expose at least another portion of the light-emitting element; and patterning the second reflective layer in an area where the light-emitting element is not set.

15. The method according to claim 14, wherein: The element substrate includes a wafer for forming the light emitting element. The pixel circuit layer includes a pixel circuit, The step of arranging the element substrate and the light emitting element on the pixel circuit layer includes: forming a contact portion passing through the element substrate to electrically connect the pixel circuit to the light emitting element, The method further includes: forming a color conversion layer including quantum dots on the element substrate in a region where the light emitting element is not provided, The light emitting element and the first reflective layer form a bank structure for forming the color conversion layer.

Images