Display device

Abstract

A display device according to an embodiment includes: a first substrate including a light emitting area and a non-light emitting area; the first pixel electrode is located on the light emitting area of the first substrate; the pixel defining layer is located on the non-light-emitting area of the first substrate and located on the first pixel electrode; a first light emitting structure on the first pixel electrode and including quantum dots; and a common electrode covering the light-emitting structure and the pixel defining layer, the pixel defining layer including an inorganic insulating material layer containing a fluorine-based material.

Description

Technical Field

[0001] The invention relates to a display device. Background Art

[0002] As the information society develops, demands for display devices for displaying images are increasing in various forms. For example, display devices are applied to various electronic devices such as smartphones, digital cameras, notebook computers, navigation devices, and smart TVs.

[0003] The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, or a light emitting display device. The light emitting display device may include an organic light emitting display device including an organic light emitting element, or an inorganic light emitting display device including an inorganic light emitting element such as a quantum dot.

[0004] Among them, development of display devices including quantum dots is underway, and efforts are being made to improve the efficiency of display devices using quantum dots. Summary of the invention

[0005] The problem to be solved by the present invention is to provide a display device that can prevent the diffusion of dopants caused by a light-emitting element including a quantum dot light-emitting layer and a pixel defining layer, thereby improving the reliability of the light-emitting element.

[0006] The problem to be solved by the present invention is to provide a display device that can prevent the ligands of an organic or inorganic compound included in a quantum dot light-emitting layer from binding and improve the durability of a light-emitting element.

[0007] The problems of the present invention are not limited to the problems mentioned above, and those skilled in the art can clearly understand other technical problems not mentioned from the following description.

[0008] According to one embodiment, a display device for solving the above-mentioned problems includes: a first substrate, including a light-emitting area and a non-light-emitting area; a first pixel electrode, located on the light-emitting area of ​​the first substrate; a pixel defining layer, located on the non-light-emitting area of ​​the first substrate and on the first pixel electrode; a first light-emitting structure, located on the first pixel electrode and including quantum dots; and a common electrode, covering the light-emitting structure and the pixel defining layer, the pixel defining layer including an inorganic insulating material layer containing a fluorine-based material.

[0009] In addition, the display device of the present invention also includes: a packaging structure, which is located on the common electrode, overlaps the non-luminous area and is connected to the common electrode, the packaging structure includes a second substrate and a hydrogen supply layer located between the second substrate and the common electrode, the hydrogen supply layer overlaps the luminous area and is separated from the common electrode by a space.

[0010] The hydrogen supply layer may include: at least one compound of silicon nitride and silicon oxide; and hydrogen forming any one of a silicon-hydrogen (Si—H) bond, a nitrogen-hydrogen (NH) bond, and an oxygen-hydrogen (OH) bond.

[0011] The light-emitting structure may include a quantum dot light-emitting layer and an electron transport layer, the light-emitting structure may include an inclined portion inclined from a portion in contact with the pixel defining layer toward the common electrode, and the electron transport layer may include zinc oxide.

[0012] The pixel defining layer may include an inorganic insulating material layer containing silicon, and the inorganic insulating material layer containing a fluorine-based material covers the inorganic insulating material layer containing silicon to form a double layer.

[0013] The inorganic insulating material layer containing silicon may include silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ) and silicon oxynitride (Si 2 N 2 O) at least one inorganic insulating substance.

[0014] The inorganic insulating material layer containing fluorine-based materials may include fluorine-based silicon dioxide (F-SiO 2 ) Fluorine Silicon Nitride (F-Si 3 N 4 ) and fluorine-based silicon oxynitride (F-Si 2 N 2 O) is an inorganic insulating substance.

[0015] The pixel defining layer may include an organic insulating material layer, and the inorganic insulating material layer containing the fluorine-based material covers the organic insulating material layer to form a double layer.

[0016] The organic insulating material layer may include at least one organic insulating material selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, poly phenylenethers resin, polyphenylenesulfides resin or benzocyclobutene (BCB).

[0017] It may be that a display device according to one embodiment for solving the above-mentioned problem includes: a first substrate, including a light-emitting area and a non-light-emitting area; a first pixel electrode, located on the light-emitting area of ​​the first substrate; a pixel defining layer, located on the non-light-emitting area of ​​the first substrate and on the first pixel electrode; a first light-emitting structure, located on the first pixel electrode and including quantum dots; a common electrode, covering the light-emitting structure and the pixel defining layer; and a packaging structure, located on the common electrode, overlapping the non-light-emitting area and connected to the common electrode, the pixel defining layer including an organic or inorganic insulating material layer located on the non-light-emitting area of ​​the first substrate and an inorganic insulating material layer covering the organic or inorganic insulating material layer to form a double layer.

[0018] The packaging structure may include a second substrate and a hydrogen supply layer between the second substrate and the common electrode, wherein the hydrogen supply layer overlaps the light emitting region and is separated from the common electrode via a space.

[0019] The hydrogen supply layer may include: at least one compound of silicon nitride and silicon oxide; and hydrogen forming any one of a silicon-hydrogen (Si—H) bond, a nitrogen-hydrogen (NH) bond, and an oxygen-hydrogen (OH) bond.

[0020] The light-emitting structure may include a quantum dot light-emitting layer and an electron transport layer, the light-emitting structure may include an inclined portion inclined from a portion in contact with the pixel defining layer toward the common electrode, and the electron transport layer may include zinc oxide.

[0021] The pixel defining layer may be a double layer formed by the inorganic insulating material layer containing a fluorine-based material covering the organic or inorganic insulating material layer.

[0022] According to the display device according to the embodiment, diffusion of dopants caused by the light emitting element including the quantum dot light emitting layer and the pixel defining layer can be prevented, thereby improving the reliability of the light emitting element.

[0023] In addition, the ligands of the organic or inorganic compound included in the quantum dot light-emitting layer can be prevented from being bound, thereby improving the durability of the light-emitting element.

[0024] The effects according to the embodiment are not limited to the above-exemplified contents, and more various effects are included in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a perspective view showing a display device according to an embodiment.

[0026] Figure 2 is a plan view of a display device according to an embodiment.

[0027] Figure 3 It is intercepted along the I-I' line Figure 2 A cross-sectional view of a display panel.

[0028] Figure 4 Is magnification Figure 2 Floor plan of the "A" area.

[0029] Figure 5 It is along Figure 4 A cross-sectional view of the display device taken along line X1-X1'.

[0030] Figure 6 It is shown Figure 5 Cross-sectional view of the pixel definition layer evaporation process.

[0031] Figure 7 It is shown Figure 6 Cross-sectional view of the pixel definition layer patterning result.

[0032] Figure 8 Is magnification Figure 5 A cross-sectional view of the first light emitting region of the display device shown.

[0033] Fig. 9 and Fig.10 is a perspective view showing a quantum dot display device according to an embodiment including a quantum dot light emitting layer.

[0034] Fig.11 and Fig.12 is a perspective view showing a quantum dot display device according to yet another embodiment of the present invention.

[0035] Fig.13 is a perspective view showing a rollable type quantum dot display device according to another embodiment of the present invention.

[0036] Fig.14 is a perspective view showing a rollable type quantum dot display device according to yet another embodiment of the present invention.

[0037] (Explanation of Reference Numerals)

[0038] 1: Display device

[0039] 10: First substrate

[0040] 30: Second substrate

[0041] 50: Sealing part

[0042] 100: Display panel

[0043] 110: First base substrate

[0044] 150: Light-emitting element layer

[0045] 153: Hole injection layer

[0046] 154: Hole transport layer

[0047] 155: Quantum dot light-emitting layer

[0048] 310: Second base substrate

[0049] 330: Hydrogen supply layer DETAILED DESCRIPTION

[0050] If you refer to the attached Figure 1 The advantages and features of the present invention and the methods for achieving them will become clear from the detailed embodiments described below. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various forms different from each other. The embodiments are only provided to make the disclosure of the present invention complete and to fully inform the scope of the invention to those with common knowledge in the technical field to which the present invention belongs. The present invention is defined only by the scope of the claims.

[0051] Reference to an element or layer being "on" another element or layer includes all instances where it is directly on top of another element or where another layer or other element is interposed therebetween. Similarly, reference to "below," "left," and "right" includes all instances where it is directly adjacent to another element or where another layer or other material is interposed therebetween. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0052] Although the terms first, second, etc. are used to describe a variety of components, these components are of course not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, of course, the first component mentioned below can also be the second component within the technical concept of the present invention.

[0053] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0054] Figure 1 is a perspective view showing a display device according to an embodiment. Figure 2 is a plan view of a display device according to an embodiment.

[0055] Reference Figure 1 , the display device 1 displays a dynamic image or a static image. The display device 1 may refer to all electronic devices that provide a display screen. For example, a television, a notebook, a monitor, an advertising board, an Internet of Things, a mobile phone, a smart phone, a tablet PC (Personal Computer), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic manual, an electronic book, a PMP (Portable Multimedia Player), a navigator, a game console, a digital camera, a video camera, etc. that provide a display screen may be included in the display device 1.

[0056] The display device 1 may include an inorganic light emitting diode display device, an organic light emitting display device, a quantum dot light emitting display device, a plasma display device, a field emission display device, etc. As an example of a display device, the following illustrates the case where an organic light emitting diode display device is used, but the present invention is not limited thereto, and may also be applied to other display devices if the same technical concept can be applied.

[0057] The shape of the display device 1 can be variously deformed. For example, the display device 1 can have a horizontally long rectangle, a vertically long rectangle, a regular quadrilateral, a quadrilateral with rounded corners (vertices), other polygons, a circle, and the like. The shape of the display area DA of the display device 1 can also be similar to the overall shape of the display device 1. Figure 1 In the figure, the display device 1 is exemplified as being in a rectangular shape with a long length in the second direction Y, but the present invention is not limited thereto.

[0058] Reference Figure 1 and Figure 2 The display device 1 may include a display panel (display device 1 ), a display driving unit 200 , and a circuit board 300 .

[0059] The display panel (display device 1) can be formed as a plane in the form of a rectangle having a short side in a first direction (X-axis direction) and a long side in a second direction (Y-axis direction) intersecting the first direction (X-axis direction). The corner (corner) where the short side in the first direction (X-axis direction) and the long side in the second direction (Y-axis direction) intersect can be formed in a circular shape or formed at a right angle so as to have a predetermined curvature. The plane form of the display panel (display device 1) is not limited to a quadrilateral, and can be formed into other polygons, circles or ellipses. The display panel (display device 1) can be formed flat, but is not limited to this, and can include a curved portion formed at the left and right ends and having a certain curvature or having a variable curvature. In addition, the display panel (display device 1) can be flexibly formed to be able to bend or bend or bend or fold or curl.

[0060] The display panel (display device 1 ) may include a display area DA and a non-display area NDA and a pad area PDA.

[0061] The display area DA may occupy approximately the center of the display device 1. A plurality of pixels PX may be arranged in the display area DA. Each of the plurality of pixels PX may be defined as a minimum unit for emitting light. The plurality of pixels PX may be connected to a signal line located in the non-display area NDA. The display area DA may be configured from the light emitting areas EA1, EA2, EA3 (refer to Figure 4 ) or multiple openings OP1, OP2, OP3 (refer to Figure 5 ) emits light.

[0062] The non-display area NDA may be an outer area of ​​the display area DA. The non-display area NDA, as an outer edge area of ​​the display panel (display device 1), may be an area surrounding the display area DA. The non-display area NDA may include a gate driving unit (not shown) that supplies a gate signal to a gate line, a fan-out line (not shown) that connects the display driving unit 200 and the display area DA, and the like.

[0063] The display driving unit 200 may output signals and voltages for driving the display panel (display device 1). Specifically, the display driving unit 200 may output signals and voltages for driving a plurality of pixels PX configured in the display area DA. The display driving unit 200 may supply data voltages to data lines of the display panel (display device 1). The display driving unit 200 may supply power voltages to power lines and supply gate control signals to the gate driving unit of the display panel (display device 1).

[0064] The circuit board 300 can be attached to the pad portion of the display panel (display device 1) using an anisotropic conductive film (ACF). The leads of the circuit board 300 can be electrically connected to the pad portion of the display panel (display device 1). The circuit board 300 can be a flexible printed circuit board (Flexible Printed Circuit Board), a printed circuit board (Printed Circuit Board) or a flexible film (Flexible Film) such as a chip on film (Chip on Film). The display drive unit 200 can also be formed by an integrated circuit (Integrated Circuit, IC), so as to be assembled on the display panel (display device 1) in a COG (Chip on Glass) manner, a COP (Chip on Plastic) manner or an ultrasonic welding manner. The display drive unit 200 can be formed by an integrated circuit (Integrated Circuit, IC) and assembled on the circuit board 300 in a COG (Chip on Glass) manner, a COP (Chip on Plastic) manner or an ultrasonic welding manner. Alternatively, the display driving unit 200 may be mounted on the display panel (display device 1 ) by a COG method, a COP method, or an ultrasonic welding method.

[0065] A plurality of display pads PD may be configured in the pad area PDA of the display panel (display device 1). The plurality of display pads PD may be configured at the edge of the pad area PDA. The plurality of display pads PD may be connected to the image system through the circuit board 300. The plurality of display pads PD may receive digital video data by being connected to the circuit board 300, and may supply the digital video data to the display driving unit 200.

[0066] Figure 3 It is intercepted along the I-I' line Figure 2 A cross-sectional view of a display panel.

[0067] If you refer to Figure 3 The schematic stacking structure of the display device 1 is described, and the display device 1 may include a first substrate 10, a second substrate 30 opposite to the first substrate 10, and a sealing portion 50 combining the first substrate 10 and the second substrate 30. On this basis, the first substrate 10 may include a first base substrate 110 and a light emitting element layer 150, and the second substrate 30 may include a second base substrate 310 and a hydrogen supply layer 330.

[0068] The first base substrate 110 may be a base substrate or a base member. The first base substrate 110 may be a flexible substrate capable of bending, folding, rolling, etc. For example, the first base substrate 110 may include a polymer resin such as polyimide (PI), but is not limited thereto. For another example, the first base substrate 110 may include a glass material or a metal material.

[0069] The light-emitting element layer 150 may include a pixel circuit including a switching element, a pixel defining film defining a light-emitting area or an opening area, and a self-light emitting element. For example, the self-light emitting element may include at least one of an organic light-emitting diode including an organic light-emitting layer, a quantum dot light-emitting diode including a quantum dot light-emitting layer, an inorganic light-emitting diode including an inorganic semiconductor, and a micro light-emitting diode (Micro LED), but is not limited thereto.

[0070] The second base substrate 310 may be a base substrate formed of various materials such as glass material, metal material, or plastic material such as PET (Polyethylenterephthalate), PEN (Polyethylen naphthalate), polyimide (Polyimide), etc. On this basis, the second substrate 30 may include ultra-thin glass (UTG) with a thickness of less than 0.01 mm. The second substrate 30 may prevent impurities such as moisture or air from penetrating and diffusing from the outside to the light-emitting element layer 150 of the first substrate 10.

[0071] The hydrogen supply layer 330 may be formed on the second base substrate 310. The hydrogen supply layer 330 may be bonded to the first substrate 10 through the sealing portion 50 through a subsequent process after the second base substrate 310 is evaporated. Thus, the hydrogen supply layer 330 may be located between the first base substrate 110 and the second base substrate 310. On this basis, the hydrogen supply layer 330 may be opposite to the light emitting element layer 150 and configured to overlap with the light emitting element layer 150.

[0072] The hydrogen supply layer 330 may be an inorganic layer containing silicon. For example, the hydrogen supply layer 330 may include silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ) and silicon oxynitride (Si 2 N 2 O).

[0073] The sealing portion 50 overlaps the non-display area NDA and is arranged along the edges of the first substrate 10 and the second substrate 30 to surround the display area DA in a plane. The first substrate 10 and the second substrate 30 can be combined with each other through the sealing portion 50. The sealing portion 50 can prevent impurities such as moisture or air from penetrating and diffusing from the outside to the light-emitting element layer 150 of the first substrate 10. The sealing portion 50 can entirely include an organic substance with an epoxy resin as a base and an inorganic substance with a glass component as a base.

[0074] Figure 4 Is magnification Figure 2 Floor plan of the "A" area.

[0075] Reference Figure 4 , the display device 1 may include a plurality of light emitting areas EA1, EA2, EA3 arranged in the display area DA. The plurality of light emitting areas EA1, EA2, EA3 may include a first light emitting area EA1, a second light emitting area EA2, and a third light emitting area EA3 that emit light of different colors from each other. The plurality of light emitting areas EA1, EA2, EA3 may emit red, green, or blue light, respectively, and the color of the light emitted from each light emitting area EA1, EA2, EA3 may be determined according to the light emitting element layer ( Figure 5 150) of the light emitting element ( Figure 5 In the exemplary embodiment, the first light emitting area EA1 emits a red first light, the second light emitting area EA2 emits a green second light, and the third light emitting area EA3 emits a blue third light.

[0076] The non-luminous area BA is an area surrounding each of the luminous areas EA1, EA2, and EA3. The non-luminous area BA may be an area where light does not pass through, but is not limited thereto. The non-luminous area BA includes a pixel definition layer ( Figure 5 "151") material, light can pass through it, or it can't pass through it.

[0077] In some embodiments, the display device 1 may include a space SA surrounding each of the light emitting areas EA1, EA2, EA3. Each space SA may be caused by the bonding of the first substrate 10 and the second substrate 30. Each space SA may be formed by nitrogen (N2) according to the atmosphere of the manufacturing process. 2 ) or air (Air). The space SA will be described in detail later.

[0078] In some embodiments, the hydrogen supply layer 330 may entirely cover the plurality of light emitting areas EA1 , EA2 , EA3 , the plurality of spaces SA, and the non-light emitting area BA.

[0079] Figure 5 It is along Figure 4 A cross-sectional view of the display device taken along line X1-X1'.

[0080] Reference Figure 5 The first substrate 10 of the display device 1 may include a first base substrate 110 , a thin film transistor layer 130 and a light emitting element layer 150 .

[0081] A thin film transistor layer 130 may be disposed on the first base substrate 110 .

[0082] The thin film transistor layer 130 may include a first buffer layer 111 , a lower metal layer BML, a second buffer layer 113 , a thin film transistor TFT, a gate insulating layer 131 , a first interlayer insulating layer 133 , a capacitor electrode CPE, a second interlayer insulating layer 135 , a first connection electrode CNE1 , a first protective layer 137 , a second connection electrode CNE2 , and a second protective layer 139 .

[0083] The first buffer layer 111 may be disposed on the first base substrate 110. The first buffer layer 111 may include an inorganic film that may prevent penetration of air or moisture. For example, the first buffer layer 111 may include a plurality of inorganic films alternately stacked.

[0084] The lower metal layer BML may be disposed on the first buffer layer 111. For example, the lower metal layer BML may be formed of a single layer or a plurality of layers composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0085] The second buffer layer 113 may cover the first buffer layer 111 and the lower metal layer BML. The second buffer layer 113 may include an inorganic film that may prevent penetration of air or moisture. For example, the second buffer layer 113 may include a plurality of inorganic films alternately stacked.

[0086] The thin film transistor TFT may be disposed on the second buffer layer 113 and may constitute a pixel circuit of each of the plurality of pixels. The thin film transistor TFT may be a driving transistor or a switching transistor of the pixel circuit. The thin film transistor TFT may include a semiconductor layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE. The thin film transistor TFT may be not only an oxide thin film transistor (Oxide TFT) but may also include a low temperature polysilicon thin film transistor (LTPS).

[0087] The semiconductor layer ACT may be disposed on the second buffer layer 113. The semiconductor layer ACT may overlap the lower metal layer BML and the gate electrode GE in the thickness direction, and may be insulated from the gate electrode GE by the gate insulating layer 131. A portion of the semiconductor layer ACT may be conductively formed by the material of the semiconductor layer ACT to form a source electrode SE and a drain electrode DE.

[0088] The gate electrode GE may be disposed on the gate insulating layer 131. The gate electrode GE may overlap the semiconductor layer ACT via the gate insulating layer 131.

[0089] The gate insulating layer 131 may be disposed on the semiconductor layer ACT. For example, the gate insulating layer 131 may cover the semiconductor layer ACT and the second buffer layer 113 and insulate the semiconductor layer ACT from the gate electrode GE. The gate insulating layer 131 may include a contact hole through which the first connection electrode CNE1 passes.

[0090] The first interlayer insulating layer 133 may cover the gate electrode GE and the gate insulating layer 131 . The first interlayer insulating layer 133 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the first interlayer insulating layer 133 may be connected to the contact hole of the gate insulating layer 131 and the contact hole of the second interlayer insulating layer 135 .

[0091] The capacitor electrode CPE may be disposed on the first interlayer insulating layer 133. The capacitor electrode CPE may overlap the gate electrode GE in the thickness direction. The capacitor electrode CPE and the gate electrode GE may form a capacitor.

[0092] The second interlayer insulating layer 135 may cover the capacitor electrode CPE and the first interlayer insulating layer 133. The second interlayer insulating layer 135 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the second interlayer insulating layer 135 may be connected to the contact hole of the first interlayer insulating layer 133 and the contact hole of the gate insulating layer 131.

[0093] The first connection electrode CNE1 may be disposed on the second interlayer insulating layer 135. The first connection electrode CNE1 may electrically connect the drain electrode DE of the thin film transistor TFT to the second connection electrode CNE2. The first connection electrode CNE1 may be inserted into a contact hole formed in the second interlayer insulating layer 135, the first interlayer insulating layer 133, and the gate insulating layer 131 to contact the drain electrode DE of the thin film transistor TFT.

[0094] The first protective layer 137 may cover the first connection electrode CNE1 and the second interlayer insulating layer 135. The first protective layer 137 may protect the thin film transistor TFT. The first protective layer 137 may include a contact hole through which the second connection electrode CNE2 passes.

[0095] The second connection electrode CNE2 may be disposed on the first protection layer 137. The second connection electrode CNE2 may electrically connect the first connection electrode CNE1 to the pixel electrodes AE1, AE2, AE3 of the light emitting elements ED1, ED2, ED3. The second connection electrode CNE2 may be inserted into a contact hole formed in the first protection layer 137 to contact the first connection electrode CNE1.

[0096] The second protective layer 139 may cover the second connection electrode CNE2 and the first protective layer 137. The second protective layer 139 may include contact holes through which the pixel electrodes AE1, AE2, and AE3 of the light emitting elements ED1, ED2, and ED3 pass.

[0097] The light emitting element layer 150 may be disposed on the thin film transistor layer 130. The light emitting element layer 150 includes a pixel defining layer 151 defining a plurality of light emitting areas EA1, EA2, and EA3, and a plurality of light emitting elements ED1, ED2, and ED3 respectively disposed in the plurality of light emitting areas EA1, EA2, and EA3. Each light emitting element ED1, ED2, and ED3 may include a pixel electrode AE1, AE2, and AE3, a light emitting structure EL1, EL2, and EL3, and a common electrode CE.

[0098] The plurality of light emitting areas EA1 , EA2 , EA3 defined by the pixel defining layer 151 may be defined by the plurality of first to third openings OP1 , OP2 , OP3 formed by the pixel defining layer 151 .

[0099] The plurality of light emitting elements ED1, ED2, ED3 may include a first light emitting element ED1 disposed in a first light emitting region EA1, a second light emitting element ED2 disposed in a second light emitting region EA2, and a third light emitting element ED3 disposed in a third light emitting region EA3. Each of the light emitting elements ED1, ED2, ED3 may emit light of different colors such as red, blue, green, and white, depending on the material of the light emitting structures EL1, EL2, and EL3. For example, the first light emitting element ED1 disposed in the first light emitting region EA1 may emit red light of a first color, the second light emitting element ED2 disposed in the second light emitting region EA2 may emit green light of a second color, and the third light emitting element ED3 disposed in the third light emitting region EA3 may emit blue light of a third color. The three light emitting regions EA1, EA2, and EA3 constituting one pixel may include three light emitting elements ED1, ED2, and ED3 that emit light of different colors and may also represent white grayscale.

[0100] Each pixel electrode AE1, AE2, AE3 is formed on the second protective layer 139. Each pixel electrode AE1, AE2, AE3 can be respectively arranged in an area corresponding to each light emitting area EA1, EA2, EA3. Each pixel electrode AE1, AE2, AE3 can be electrically connected to the drain electrode DE of the thin film transistor TFT through the first connection electrode CNE1 and the second connection electrode CNE2. Each pixel electrode AE1, AE2, AE3 may include a first pixel electrode AE1 arranged in the first light emitting area EA1, a second pixel electrode AE2 arranged in the second light emitting area EA2, and a third pixel electrode AE3 arranged in the third light emitting area EA3. The first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 can be respectively arranged on the second protective layer 139 to be spaced apart from each other. The pixel electrodes AE1, AE2, and AE3 include indium-tin-oxide (ITO), indium-zinc-oxide (IZO), zinc oxide (ZnO), indium oxide (Induim Oxide: In 2 O 3 ) and the like, and may include transparent materials with high work functions. When the pixel electrodes AE1, AE2, and AE3 are reflective electrodes, they may have a laminated structure in which the above-mentioned material layer with high work functions and a reflective material layer such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (PD), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture thereof are laminated. For example, the pixel electrodes AE1, AE2, and AE3 may have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO, but are not limited thereto.

[0101] The display device 1 may include a pixel defining layer 151 disposed on the second protective layer 139 and the pixel electrodes AE1, AE2, and AE3. The pixel defining layer 151 forms a plurality of openings OP1, OP2, and OP3 defining the light emitting areas EA1, EA2, and EA3. The pixel defining layer 151 is formed in front of the second protective layer 139, and is formed so that the front of each pixel electrode AE1, AE2, and AE3 is exposed through each opening OP1, OP2, and OP3.

[0102] The pixel defining layer 151 may include an inorganic or organic insulating material layer BS1 and an inorganic insulating material layer BS2 containing a fluorine-based material to form a double layer.

[0103] For example, the pixel defining layer 151 may include an inorganic insulating material layer BS1 including silicon and an inorganic insulating material layer BS2 including a fluorine-based material to form a double layer. 2 ), silicon nitride (Si 3 N 4 ) and silicon oxynitride (Si 2 N 2 O) and other inorganic insulating materials.

[0104] The inorganic insulating material layer BS2 containing a fluorine-based material may include fluorine-based silicon dioxide (F-SiO 2 ) Fluorine Silicon Nitride (F-Si 3 N 4 ) and fluorine-based silicon oxynitride (F-Si 2 N 2 O) and other inorganic insulating materials.

[0105] As another example, the pixel defining layer 151 can be formed as a double layer including an organic insulating material layer BS1 and an inorganic insulating material layer BS2 containing a fluorine-based material. For example, the organic insulating material layer BS1 may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenyleneether resin, polyphenylenesulfide resin or benzocyclobutene (BCB). Similarly, the inorganic insulating material layer BS2 containing a fluorine-based material may include fluorine-based silicon dioxide (F-SiO 2 ) Fluorine Silicon Nitride (F-Si 3 N 4 ) and fluorine-based silicon oxynitride (F-Si 2 N 2 The pixel defining layer 151 according to an embodiment will be described in detail later with reference to the accompanying drawings.

[0106] Each light emitting structure EL1, EL2, EL3 can be arranged on each pixel electrode AE1, AE2, AE3. The thin film transistor TFT applies a predetermined voltage to the pixel electrode AE1, AE2, AE3 of each light emitting element ED1, ED2, ED3, and the common electrode CE of the light emitting element ED1, ED2, ED3 receives a common voltage or a cathode voltage, so that each light emitting structure EL1, EL2, EL3 can emit light from the light emitting structure EL1, EL2, EL3 of the light emitting element ED1, ED2, ED3.

[0107] The light-emitting structures EL1, EL2, and EL3 may include a first light-emitting structure EL1, a second light-emitting structure EL2, and a third light-emitting structure EL3 that are arranged in different light-emitting areas EA1, EA2, and EA3. The first light-emitting structure EL1 may be arranged on the first pixel electrode AE1 in the first light-emitting area EA1, the second light-emitting structure EL2 may be arranged on the second pixel electrode AE2 in the second light-emitting area EA2, and the third light-emitting structure EL3 may be arranged on the third pixel electrode AE3 in the third light-emitting area EA3. The light-emitting structures EL1, EL2, and EL3 included in the display device 1 may include quantum dots.

[0108] The common electrode CE may be disposed on the light emitting structures EL1, EL2, and EL3. The common electrode CE may be arranged to completely cover the light emitting structures EL1, EL2, and EL3 and the pixel defining layer 151 located in each light emitting area EA1, EA2, and EA3. The common electrode CE includes a transparent conductive material and can emit light generated in the light emitting structures EL1, EL2, and EL3. The common electrode CE may receive a common voltage or a low potential voltage. If the pixel electrodes AE1, AE2, and AE3 receive a voltage corresponding to the data voltage and the common electrode CE receives a low potential voltage, a potential difference is formed between the pixel electrodes AE1, AE2, and AE3 and the common electrode CE, so that light can be emitted from the light emitting structures EL1, EL2, and EL3. The common electrode CE may include a material layer with a small work function such as Li, Ca, Al, Mg, Ag, Pt, Pd, Ni, Au Nd, Ir, Cr, BaF, Ba, or a compound or mixture thereof (e.g., a mixture of Ag and Mg, etc.) having a multilayer structure such as LiF / Ca, LiF / Al. The common electrode CE may further include a transparent metal oxide layer disposed on the material layer having a small work function.

[0109] Although not shown, the common electrode CE may include a cover layer on the transparent conductive metal layer. The cover layer may protect the transparent conductive metal. That is, the common electrode CE may be a single film including a conductive metal or a multilayer film including a conductive metal and a cover layer.

[0110] The display device 1 may include a hydrogen supply layer 330 on the common electrode CE. As mentioned above, after the hydrogen supply layer 330 is evaporated on the second base substrate 310, it can be bonded to the first substrate 10 through the sealing part 50 through a subsequent process.

[0111] In some embodiments, the hydrogen supply layer 330 may be arranged overlapping the non-luminous area BA and the luminous areas EA1, EA2, and EA3. In other words, the hydrogen supply layer 330 may be composed of a layer overlapping and connected to the non-luminous area BA and the luminous areas EA1, EA2, and EA3. The hydrogen supply layer 330 may be a single film or a multilayer film stacked with various inorganic insulators.

[0112] The hydrogen supply layer 330 may overlap the non-luminous area BA and be located between the second base substrate 310 and the common electrode CE. In other words, the hydrogen supply layer 330 may overlap the non-luminous area BA and be connected to the common electrode CE. On this basis, the hydrogen supply layer 330 may overlap the luminous areas EA1, EA2, and EA3, thereby overlapping with the light-emitting elements ED1, ED2, and ED3. However, the hydrogen supply layer 330 may overlap the luminous areas EA1, EA2, and EA3 and be separated from the common electrode CE. Therefore, a space SA may be defined between the hydrogen supply layer 330 and the common electrode CE and overlapping the luminous areas EA1, EA2, and EA3.

[0113] Figure 6 It is shown Figure 5 Cross-sectional view of the pixel definition layer evaporation process.

[0114] Reference Figure 6 The pixel defining layer 151 is formed in front of the second protective layer 139 and the pixel electrodes AE1, AE2, and AE3, and includes an inorganic or organic insulating material layer BS1 and an inorganic insulating material layer BS2 containing a fluorine-based material, and may be formed as a double layer. To this end, an inorganic or organic insulating material layer BS1 may be first formed in front of the second protective layer 139 and the pixel electrodes AE1, AE2, and AE3.

[0115] The inorganic or organic insulating material layer BS1 can be formed by a deposition process or a coating process such as a sputtering process, an inkjet printing process, a photoresist forming process, a spin coating process, etc. The inorganic or organic insulating material layer BS1 can be formed to a thickness ranging from 100 nm to 1000 nm.

[0116] An inorganic insulating material layer BS2 containing a fluorine material is further formed in front of the inorganic or organic insulating material layer BS1. When the inorganic insulating material layer BS2 containing a fluorine material is formed, the fluorine-containing silicon dioxide (F-SiO 2) Fluorine Silicon Nitride (F-Si 3 N 4 ) and fluorine-based silicon oxynitride (F-Si 2 N 2 O) etc. are formed.

[0117] As another example, the inorganic insulating material layer BS2 containing a fluorine-based material may include hydrofluosilicic acid (Hydrofluosilicic Acid, H 2 SiF 6 The inorganic insulating material layer BS2 containing fluorine-based materials can be formed by a deposition process or coating process such as a sputtering process, an inkjet printing process, a photoresist forming process, or a spin coating process. The inorganic insulating material layer BS2 containing fluorine-based materials can be formed to be thinner than the inorganic or organic insulating material layer BS1, and to be formed to a thickness in the range of about 50nm to 200nm.

[0118] Figure 7 It is shown Figure 6 Cross-sectional view of the pixel definition layer patterning result.

[0119] Reference Figure 7 , the pixel defining layer 151 on which the inorganic or organic insulating material layer BS1 and the inorganic insulating material layer BS2 containing the fluorine material are sequentially evaporated is patterned by a photolithography process or the like. A plurality of openings OP1, OP2, and OP3 defining the light-emitting areas EA1, EA2, and EA3 are formed in the pixel defining layer 151 by the patterning process of the pixel defining layer 151. Thus, a front portion of each pixel electrode AE1, AE2, and AE3 is exposed through each opening OP1, OP2, and OP3. The inorganic insulating material layer BS2 containing the fluorine material is coated and coated on the inorganic or organic insulating material layer BS1, so that even under the high temperature or low temperature change of the pixel defining layer 151 originating from the display panel 100, the inorganic insulating material layer BS2 containing the fluorine material can stably maintain the liquid property. That is, the pixel defining layer 151 includes the inorganic insulating material layer BS2 containing the fluorine material, so that the pixel defining layer 151 can stably maintain the liquid property under the rapid high temperature or low temperature change. In addition, the pixel defining layer 151 includes an inorganic insulating material layer BS2 containing a fluorine material, so that when the photolithography process of the pixel defining layer 151 is performed, the fluorine component of the photoresist can be prevented from diffusing into the pixel defining layer 151 .

[0120] Afterwards, light-emitting structures EL1, EL2, and EL3 are formed in each light-emitting area EA1, EA2, and EA3 defined by the pixel defining layer 151. Here, each light-emitting structure EL1, EL2, and EL3 is arranged on each pixel electrode AE1, AE2, and AE3. As mentioned above, the light-emitting structures EL1, EL2, and EL3 include a first light-emitting structure EL1, a second light-emitting structure EL2, and a third light-emitting structure EL3 arranged in different light-emitting areas EA1, EA2, and EA3. Here, the first light-emitting structure EL1 may be arranged on the first pixel electrode AE1 in the first light-emitting area EA1, the second light-emitting structure EL2 may be arranged on the second pixel electrode AE2 in the second light-emitting area EA2, and the third light-emitting structure EL3 may be arranged on the third pixel electrode AE3 in the third light-emitting area EA3.

[0121] Figure 8 Is magnification Figure 5 A cross-sectional view of the first light emitting region of the display device shown.

[0122] Reference Figure 8 The first light-emitting structure EL1 of the display device 1 may include a hole injection layer 153 , a hole transport layer 154 , a quantum dot light-emitting layer 155 , and an electron transport layer 157 .

[0123] The hole injection layer 153 may be disposed on the pixel electrodes AE1 , AE2 , and AE3 , and may facilitate the injection of holes from the pixel electrodes AE1 , AE2 , and AE3 into the quantum dot light emitting layer 155 .

[0124] Illustratively, the hole injection layer 153 may include a phthalocyanine compound such as copper phthalocyanine, DNTPD (N, N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4, 4'-diamine), m-MTDA TA (4, 4', 4"-[tris(3-methylphenyl)phenylamino]triphenylamine), TDATA (4, 4'4"-Tris(N, Ndiphenylamino)triphenylamine), 2-TNATA (4, 4', 4"-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT / PSS (Poly(3, 4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), PANI / DBSA (Polyaniline / Dodecylbenzenesulfonic acid), PANI / CSA (Polyaniline / Camphor sulfonicacid), PANI / PSS (Polyaniline / Poly(4-styrenesulfonate)), NPD (N,N'-di(naphthalene-l-yl)-N,N'-dip henylbenzidine), polyetheretherketone including triphenylamine (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium[Tetrakis(pentafluorophenyl)borate], HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarb onitrile), etc.

[0125] The hole transport layer 154 may be disposed on the hole injection layer 153. The hole transport layer 154 may facilitate the transport of holes from the pixel electrodes AE1, AE2, and AE3 to the quantum dot light emitting layer 155. The hole transport layer 154 may include, for example, carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene derivatives, triphenylamine derivatives such as TPD (N, N'-bis (3-methylphenyl) -N, N'-diphenyl- [1, 1-biphenyl] -4, 4'-diamine), TCTA (4, 4', 4"-tris (N-carbazolyl) triphenylamine), NPD (N, N'-di (naphthalene-l-yl) -N, N'-diphenyl-benzidine), TAPC (4, 4'-Cyclohexylidene bis [N, Nbis (4-methylphenyl) benzamine]), HMTPD (4, 4'-Bis [N, N'- (3-tolyl) amino] -3, 3'-dimethylbiphenyl), mCP (1, 3-Bis (N-carbazolyl) benzene), etc.

[0126] The quantum dot light emitting layer 155 may be disposed on the hole transport layer 154. The quantum dot light emitting layer 155 may include a plurality of quantum dots.

[0127] The quantum dots can adjust the hue of the light emitted according to the particle size, so that the quantum dots can have various luminescent hues such as blue, red, and green. It can be that the smaller the particle size of the quantum dots, the more light in the short wavelength region is emitted. For example, the particle size of the quantum dots emitting green light from the quantum dots having the same core can be smaller than the particle size of the quantum dots emitting red light. In addition, the particle size of the quantum dots emitting blue light from the quantum dots having the same core can be smaller than the particle size of the quantum dots emitting green light. However, the embodiment is not limited thereto, and the particle size can also be adjusted according to the shell forming material and the shell thickness in the quantum dots having the same core. In the case where the quantum dots have various luminescent hues such as blue, red, and green, the materials of the cores of the quantum dots having different luminescent colors can be different from each other.

[0128] The quantum dot particles may be formed in the form of spherical, pyramidal, multi-arm or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate-like particles, and the like.

[0129] Although not shown, the quantum dot light-emitting layer 155 may include a core layer containing quantum dot particles and a shell layer surrounding the core layer. The quantum dot particles may be bound to inorganic particle ligands on the surface or periphery of the shell layer. In order to prevent the quantum dot particles from binding to the inorganic particle ligands, a hydrothermal treatment process may also be performed on the display panel 100 that forms the quantum dot light-emitting layer 155. Here, the hydrothermal treatment process of the quantum dot light-emitting layer 155 is different from a high-temperature annealing process above 150°C, and may be performed by a low-temperature annealing process below 100°C using water vapor. During the hydrothermal synthesis treatment of the quantum dot light-emitting layer 155, the phenomenon of the quantum dot particles in the quantum dot light-emitting layer 155 binding to the inorganic particle ligands can be prevented.

[0130] As an embodiment, an example in which a hydrothermal synthesis process is performed on the quantum dot light emitting layer 155 after the quantum dot light emitting layer 155 including quantum dot particles is formed is described, but the invention is not limited thereto.

[0131] The hydrothermal synthesis process according to an embodiment of the present invention may also be performed when at least one layer of nanoparticles in the hole injection layer 153, the hole transport layer 154, and the electron transport layer 157 is formed in addition to the quantum dot light emitting layer 155. In other words, when at least one layer of the hole injection layer 153, the hole transport layer 154, the quantum dot light emitting layer 155, and the electron transport layer 157 is formed, the hydrothermal synthesis process may be performed at least once at 100°C or less using water vapor.

[0132] On the other hand, the core layer of the quantum dot light emitting layer 155 may be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0133] The II-VI compound may be selected from a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a binary compound selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdH CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and a group consisting of quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0134] The III-V group compounds can be selected from a group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof, a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof, and a quaternary compound selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InGaAlP, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0135] The IV-VI group compounds can be selected from the group consisting of binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof, ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof, and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0136] The Group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The Group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0137] The shell layer can act as a protective layer for preventing the chemical denaturation of the core layer and maintaining the semiconductor properties and / or as a charging layer for imparting electrophoretic properties to the quantum dots. The shell layer may include metal or non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal or non-metal oxides include SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO and other binary compounds, or MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 Examples of the semiconductor compound include ternary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0138] The diameter of the core layer of the quantum dot described above can be formed to be 1 nm to 10 nm, but is not limited thereto. The thickness of the shell layer can be formed to be 1 nm to 10 nm, but is not limited thereto. On the other hand, the quantum dots included in the quantum dot light-emitting layer 155 can be stacked to form a layer. Specifically, in the quantum dot light-emitting layer 155, the quantum dots can be aligned in a manner adjacent to each other to form a layer, or can be aligned in a manner to form a plurality of layers such as 2 layers or 3 layers.

[0139] The electron transport layer 157 can be arranged on the quantum dot light emitting layer 155. The electron transport layer 157 can facilitate the injection and transport of electrons from the common electrode CE to the quantum dot light emitting layer 155. The electron transport layer 157 can be formed of a composition for an electron transport layer, and the composition for an electron transport layer can include inorganic particles. The inorganic particles can include metal oxides. As an example, the electron transport layer 157 of the display device 1 can include ZnMgO, ZnO, but is not limited thereto. In addition, the electron transport layer 157 can also include SiO 2 、Al2O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 、NiO、SnO 2 、 2 O 3 、ZrO 2 , HfO 2 , Y 2 O 3 Binary compounds such as ZnMgO, MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 、BaTiO 3 、BaZrO 3 、ZrSiO 4 Ternary compounds.

[0140] In some embodiments, the hole injection layer 153, the hole transport layer 154, the quantum dot light-emitting layer 155, and the electron transport layer 157 constituting the first light-emitting structure EL1 can be manufactured by an inkjet printing process. Therefore, the constituent elements of the first light-emitting structure EL1 may include an inclined portion S that is inclined in the form of rising along the side of the pixel defining layer 151 from the portion connected to the pixel defining layer 151. In other words, the two side portions of the first light-emitting structure EL1 connected to the pixel defining layer 151 may include an inclined portion S that rises and tilts in the direction toward the second base substrate 310. That is, the first light-emitting structure EL1 can be formed in a U-shaped form with similar inclinations at both ends. As an example, the two side ends of the first light-emitting structure EL1 include an inclined portion S, and it can be seen that the first light-emitting structure EL1 is manufactured by an inkjet process.

[0141] The common electrode CE is disposed on the light-emitting structures EL1, EL2, and EL3. A hydrogen supply layer 330 may be formed on the common electrode CE. In some embodiments, the hydrogen supply layer 330 may include an inorganic insulator with a high hydrogen (H) content. The hydrogen (H) content of the hydrogen supply layer 330 may be greater than 1.0E+20 molecules / cm3 when measured by thermal desorption spectroscopy (TDS). In the following, the expression of hydrogen (H) used in this embodiment may include all hydrogen ions (H + ) and hydrogen molecules (H 2 ).

[0142] The hydrogen (H) content of the hydrogen supply layer 330 is determined by the ratio of the compound including hydrogen (H) in the hydrogen supply layer 330. Specifically, the hydrogen supply layer 330 can be manufactured by a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, but the hydrogen (H) content of the hydrogen supply layer 330 can be adjusted by changing the composition ratio of the source gas and the evaporation process conditions.

[0143] Illustratively, the hydrogen supply layer 330 is made of silicon nitride (Si 3 N 4 ) is formed, silicon nitride (Si 3 N 4 ) can be made of monosilane (SiH 4 ) and ammonia (NH 3 ) is formed by a combination of. On this basis, in the formation of silicon nitride (Si 3 N 4 ) can also include hydrogen molecules (H 2 ) gas. Therefore, the hydrogen supply layer 330 removes the silicon nitride (Si 3 N 4), it may include a structure in which hydrogen (H) is combined with silicon (Si), a structure in which hydrogen (H) is combined with nitrogen (N), or both structures are included. The aforementioned example as the hydrogen supply layer 330 is silicon nitride (Si 3 N 4 ), when the hydrogen supply layer 330 includes silicon dioxide (SiO 2 ) and silicon oxynitride (Si 2 N 2 In the case of the hydrogen supply layer 330, the structure of hydrogen (H) and oxygen (O) may also be included. Therefore, the hydrogen (H) content of the hydrogen supply layer 330 may be determined according to the content of silicon-hydrogen (Si-H) bonds, nitrogen-hydrogen bonds (NH) and oxygen-hydrogen bonds (OH).

[0144] The hydrogen (H) included in the hydrogen supply layer 330 can react with the metal oxide included in the light-emitting structures EL1, EL2, and EL3 in the display device 1. The hydrogen (H) included in the hydrogen supply layer 330 removes the oxygen vacancy phenomenon of the metal oxide included in the light-emitting structures EL1, EL2, and EL3, thereby improving the current characteristics of the display device 1 and increasing the luminous efficiency.

[0145] Illustratively, hydrogen (H) included in the hydrogen supply layer 330 reacts with zinc magnesium oxide (ZnMgO) or zinc oxide (ZnO) included in the electron transport layer 157 to improve the current injection characteristics of the electron transport layer 157 .

[0146] In some embodiments, if the hydrogen supply layer 330 includes a hydrogen (H) content of 1.0E+20 molecules / cm 3 or more when measured by thermal desorption spectroscopy (TDS), the hydrogen (H) in the hydrogen supply layer 330 can diffuse inside the display device 1 without a separate process.

[0147] The hydrogen (H) of the hydrogen supply layer 330 is diffused not only through the space SA, but also through the common electrode CE and the pixel defining layer 151. The hydrogen (H) included in the hydrogen supply layer 330 can diffuse to the hole injection layer 153, the hole transport layer 154 and the quantum dot light-emitting layer 155 including the first light-emitting structure EL1 through the common electrode CE and the pixel defining layer 151. For ease of explanation, the first light-emitting area EA1 is shown and described later, but the hydrogen supply layer 330 and the light-emitting elements ED1, ED2, ED3 overlapping with the light-emitting areas EA1, EA2, and EA3 may include the same features and structures.

[0148] Fig. 9 and Fig.10is a perspective view showing a quantum dot display device according to an embodiment including a quantum dot light emitting layer.

[0149] exist Fig. 9 and Fig.10 The display device 1 illustrated in the figure is a foldable type quantum dot display device that is folded in a first direction (X-axis direction). The display device 1 can maintain a completely folded state and an unfolded state. The display device 1 can be folded in an in-folding manner with the front arranged on the inner side. In the case where the display device 1 is bent or folded in an in-folding manner, the front of the display device 1 can be arranged to be opposite to each other. Alternatively, the display device 1 can be folded in an out-folding manner with the front arranged on the outer side. In the case where the display device 1 is bent or folded in an out-folding manner, the back of the display device 1 can be arranged to be opposite to each other.

[0150] The first non-folding area NFA1 may be disposed on one side of the folding area FDA, for example, on the right side. The second non-folding area NFA2 may be disposed on the other side of the folding area FDA, for example, on the left side. The touch sensing portion according to the embodiment of the present specification may be formed and disposed on the first non-folding area NFA1 and the second non-folding area NFA2, respectively.

[0151] The first folding line FOL1 and the second folding line FOL2 extend in the second direction (Y-axis direction), and the display device 1 can be folded in the first direction (X-axis direction). Thus, the length of the display device 1 in the first direction (X-axis direction) can be shortened to about half, so that the user can carry the display device 1 more easily.

[0152] On the other hand, the extending direction of the first folding line FOL1 and the extending direction of the second folding line FOL2 are not limited to the second direction (Y-axis direction). For example, the first folding line FOL1 and the second folding line FOL2 extend in the first direction (X-axis direction), and the display device 1 can be folded in the second direction (Y-axis direction). In this case, the length of the second direction (Y-axis direction) of the display device 1 can be shortened to approximately half. Alternatively, the first folding line FOL1 and the second folding line FOL2 can extend in the diagonal direction of the display device 1 between the first direction (X-axis direction) and the second direction (Y-axis direction). In this case, the display device 1 can be folded in a triangular form.

[0153] In the case where the first folding line FOL1 and the second folding line FOL2 extend in the second direction (Y-axis direction), the length of the folding area FDA in the first direction (X-axis direction) may be shorter than the length in the second direction (Y-axis direction). In addition, the length of the first non-folding area NFA1 in the first direction (X-axis direction) may be longer than the length of the folding area FDA in the first direction (X-axis direction). The length of the second non-folding area NFA2 in the first direction (X-axis direction) may be longer than the length of the folding area FDA in the first direction (X-axis direction).

[0154] The first display area DA1 may be disposed in front of the display device 1. The first display area DA1 may overlap with the folding area FDA, the first non-folding area NFA1, and the second non-folding area NFA2. Thus, when the display device 1 is unfolded, an image may be displayed from the folding area FDA, the first non-folding area NFA1, and the second non-folding area NFA2 of the display device 1 toward the front.

[0155] The second display area DA2 may be disposed on the back of the display device 1. The second display area DA2 may overlap with the second non-folding area NFA2. Therefore, when the display device 1 is folded, an image may be displayed from the second non-folding area NFA2 of the display device 1 toward the front.

[0156] exist Fig. 9 and Fig.10 2 illustrates a case where the through hole TH forming the camera or the like is arranged in the first unfolding area NFA1, but the present invention is not limited thereto. The through hole TH or the camera may be arranged in the second unfolding area NFA2 or the folding area FDA.

[0157] Fig.11 and Fig.12 is a perspective view showing a quantum dot display device according to yet another embodiment of the present invention.

[0158] exist Fig.11 and Fig.12 , it is illustrated that the display device 1 is a foldable display device that is folded in the second direction (Y-axis direction). The display device 1 can maintain a completely folded state and an unfolded state. The display device 1 can be folded in an in-folding manner with the front side arranged on the inner side. When the display device 1 is bent or folded in an in-folding manner, the front sides of the display device 1 can be arranged to be opposite to each other. Alternatively, the display device 1 can be folded in an out-folding manner with the front side arranged on the outer side. When the display device 1 is bent or folded in an out-folding manner, the back sides of the display device 1 can be arranged to be opposite to each other.

[0159] The display device 1 may include a folding area FDA, a first non-folding area NFA1, and a second non-folding area NFA2. The folding area FDA may be an area where the display device 1 is folded, and the first non-folding area NFA1 and the second non-folding area NFA2 are areas where the display device 1 is not folded. The first non-folding area NFA1 may be configured on one side of the folding area FDA, for example, on the lower side. The second non-folding area NFA2 may be configured on the other side of the folding area FDA, for example, on the upper side.

[0160] The touch sensing parts according to the embodiments of the present disclosure may be formed and arranged on the first non-folding area NFA1 and the second non-folding area NFA2 , respectively.

[0161] On the contrary, the folding area FDA may be an area bent at a predetermined curvature from the first folding line FOL1 and the second folding line FOL2. Thus, the first folding line FOL1 may be a boundary between the folding area FDA and the first non-folding area NFA1, and the second folding line FOL2 may be a boundary between the folding area FDA and the second non-folding area NFA2.

[0162] The first folding line FOL1 and the second folding line FOL2 are Fig.11 and Fig.12 The display device 1 can be folded in the second direction (Y-axis direction) while extending in the first direction (X-axis direction). Thus, the length of the display device 1 in the second direction (Y-axis direction) can be shortened to about half, making it easier for users to carry the display device 1.

[0163] On the other hand, the extending direction of the first folding line FOL1 and the extending direction of the second folding line FOL2 are not limited to the first direction (X-axis direction). For example, the first folding line FOL1 and the second folding line FOL2 extend in the second direction (Y-axis direction), and the display device 1 can be folded in the first direction (X-axis direction). In this case, the length of the display device 1 in the first direction (X-axis direction) can be shortened to approximately half. Alternatively, the first folding line FOL1 and the second folding line FOL2 can extend in the diagonal direction of the display device 1 between the first direction (X-axis direction) and the second direction (Y-axis direction). In this case, the display device 1 can be folded in a triangular form.

[0164] The first folding line FOL1 and the second folding line FOL2 are as follows: Fig.11 and Fig.12In the case of extending in the first direction (X-axis direction), the length of the folding area FDA in the second direction (Y-axis direction) may be shorter than the length in the first direction (X-axis direction). In addition, the length of the first non-folding area NFA1 in the second direction (Y-axis direction) may be longer than the length of the folding area FDA in the second direction (Y-axis direction). The length of the second non-folding area NFA2 in the second direction (Y-axis direction) may be longer than the length of the folding area FDA in the second direction (Y-axis direction).

[0165] The first display area DA1 may be disposed in front of the display device 1. The first display area DA1 may overlap with the folding area FDA, the first non-folding area NFA1, and the second non-folding area NFA2. Thus, when the display device 1 is unfolded, an image may be displayed from the folding area FDA, the first non-folding area NFA1, and the second non-folding area NFA2 of the display device 1 toward the front.

[0166] The second display area DA2 may be disposed on the back of the display device 1. The second display area DA2 may overlap with the second non-folding area NFA2. Therefore, when the display device 1 is folded, an image may be displayed from the second non-folding area NFA2 of the display device 1 toward the front.

[0167] exist Fig.11 and Fig.12 2 illustrates a case where the through hole TH for configuring a camera or the like is configured in the second unfolding area NFA2, but the present invention is not limited thereto. The through hole TH may be configured in the first unfolding area NFA1 or the folding area FDA.

[0168] Fig.13 is a perspective view showing a rollable quantum dot display device according to another embodiment of the present invention. And, Fig.14 is a perspective view showing a rollable type quantum dot display device according to yet another embodiment of the present invention.

[0169] Reference Fig.13 and Fig.14 The rollable display device 1 can be applied as a display unit of a portable electronic device such as a tablet PC (tablet personal computer), a mobile communication terminal, an electronic manual, an electronic book, and a UMPC (Ultra Mobile PC). The display panel 100 of the rollable display device 1 can be rolled while being folded in a first direction (X-axis direction) or a second direction (Y-axis direction).

[0170] According to the quantum dot display device of the embodiment described above, the diffusion of dopants of the light-emitting element including quantum dot particles and quantum dot light-emitting layer can be prevented and the reliability of the light-emitting element can be improved. In addition, the ligands of organic compounds or inorganic compounds such as organic particles or inorganic particles can be prevented from binding to improve the durability of the light-emitting element.

[0171] The embodiments of the present invention are described above with reference to the attached drawings, but a person with common knowledge in the technical field to which the present invention belongs will understand that the present invention can be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood in all aspects as illustrative only and not restrictive.

Claims

1. A display device, wherein: include: A first substrate, comprising a light-emitting area and a non-light-emitting area; A first pixel electrode, located on the light emitting area of ​​the first substrate; a pixel defining layer, located on the non-luminescent region of the first substrate and on the first pixel electrode; a light-emitting structure, located on the first pixel electrode and comprising quantum dots; and A common electrode covers the light emitting structure and the pixel defining layer, The pixel defining layer includes an inorganic insulating material layer containing a fluorine-based material.

2. The display device according to claim 1, wherein: The display device further includes: a second substrate, opposite to the first substrate; and a hydrogen supply layer, located between the second substrate and the common electrode, The hydrogen supply layer overlaps the light emitting region and is separated from the common electrode by a space. The hydrogen supply layer includes: at least one compound of silicon nitride and silicon oxide; and hydrogen forming any one of a silicon-hydrogen bond, a nitrogen-hydrogen bond, and an oxygen-hydrogen bond.

3. The display device according to claim 1, wherein: The light-emitting structure comprises a quantum dot light-emitting layer and an electron transport layer. The light emitting structure includes an inclined portion inclined from a portion in contact with the pixel defining layer toward the common electrode. The electron transport layer includes zinc oxide.

4. The display device according to claim 1, wherein: The pixel defining layer includes an inorganic insulating material layer containing silicon, The inorganic insulating material layer containing fluorine-based material covers the inorganic insulating material layer containing silicon to form a double layer. The inorganic insulating material layer containing silicon includes at least one inorganic insulating material selected from silicon dioxide, silicon nitride and silicon oxynitride. The inorganic insulating material layer containing a fluorine-based material includes at least one inorganic insulating material selected from the group consisting of fluorine-based silicon dioxide, fluorine-based silicon nitride, and fluorine-based silicon oxynitride.

5. The display device according to claim 1, wherein: The pixel defining layer includes an organic insulating material layer, The inorganic insulating material layer containing fluorine-based material covers the organic insulating material layer to form a double layer. The organic insulating material layer includes at least one organic insulating material selected from acrylic resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin or benzocyclobutene. The inorganic insulating material layer containing a fluorine-based material includes at least one inorganic insulating material selected from the group consisting of fluorine-based silicon dioxide, fluorine-based silicon nitride, and fluorine-based silicon oxynitride.

6. A display device, wherein: include, A first substrate, comprising a light-emitting area and a non-light-emitting area; A first pixel electrode, located on the light emitting area of ​​the first substrate; a pixel defining layer, located on the non-luminescent region of the first substrate and on the first pixel electrode; a light-emitting structure, located on the first pixel electrode and comprising quantum dots; and The common electrode covers the light-emitting structure and the pixel defining layer, wherein the pixel defining layer comprises an organic or inorganic insulating material layer located on the non-light-emitting area of ​​the first substrate and an inorganic insulating material layer covering the organic or inorganic insulating material layer to form a double layer.

7. The display device according to claim 6, wherein: The display device further includes: a second substrate, opposite to the first substrate; and a hydrogen supply layer, located between the second substrate and the common electrode, The hydrogen supply layer overlaps the light emitting region and is separated from the common electrode by a space. The hydrogen supply layer includes: at least one compound of silicon nitride and silicon oxide; and hydrogen that forms any one of a silicon-hydrogen bond, a nitrogen-hydrogen bond, and an oxygen-hydrogen bond, The light-emitting structure comprises a quantum dot light-emitting layer and an electron transport layer. The light emitting structure includes an inclined portion inclined from a portion in contact with the pixel defining layer toward the common electrode. The electron transport layer includes zinc oxide.

8. The display device according to claim 6, wherein: The pixel defining layer is formed as a double layer by the inorganic insulating material layer containing fluorine-based material covering the organic or inorganic insulating material layer.

9. The display device according to claim 8, wherein: The organic or inorganic insulating material layer located on the non-light emitting area of ​​the first substrate includes at least one inorganic insulating material selected from silicon dioxide, silicon nitride and silicon oxynitride. The inorganic insulating material layer containing a fluorine-based material includes at least one inorganic insulating material selected from the group consisting of fluorine-based silicon dioxide, fluorine-based silicon nitride, and fluorine-based silicon oxynitride.

10. The display device according to claim 8, wherein: The organic or inorganic insulating material layer located on the non-luminescent area of ​​the first substrate includes at least one organic insulating material selected from acrylic resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin or benzocyclobutene.

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