Display panel and display device

Abstract

The invention provides a display panel and a display device.The display panel comprises an array substrate and a light-emitting device layer, the light-emitting device layer comprises an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer, and the thickness of a first electron blocking unit or a third electron blocking unit is reduced; and the thickness of the second electron blocking unit or the fourth electron blocking unit is reduced, so that the number of the mask plates can be reduced, and the relative position offset between different film layers formed by etching can be avoided, thereby ensuring the consistency and stability of the micro-cavity structure in the light-emitting device layer, and improving the light-emitting efficiency. Therefore, the light emitting efficiency of the light emitting device in the display panel can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] With the development of flat panel display technology, the stability requirements for display panels have gradually increased. In recent years, organic light emitting diode (OLED) display panels have developed rapidly around the world, and organic light emitting diode display technology has also been increasingly advanced.

[0003] With the improvement of OLED display technology and process, the application field of OLED display is gradually expanding to medium and large sizes. In the field of medium and large OLED display, the stability of display panels is required to be higher, especially in terms of life and temperature stability. Under this environment, the application demand of stacked OLED devices has increased, and major display manufacturers have also invested resources in technology and product development, launching stacked OLED devices of various structures. At present, the structure of mainstream stacked OLED devices is complex, and the number of masks required for the process is large. Limited by the accuracy of the process, when the mask is replaced for etching, there is a deviation in the positioning of the mask, and the position of the film layer at the etching site will also be offset accordingly, causing the microcavity structure of the stacked OLED device to change, resulting in a decrease in the luminous efficiency of the stacked OLED device.

[0004] Therefore, it is necessary to provide a display panel and a display device to improve this defect. Summary of the invention

[0005] Embodiments of the present application provide a display panel and a display device, which can improve the light-emitting efficiency of a light-emitting device in the display panel.

[0006] An embodiment of the present application provides a display panel, comprising an array substrate and a light-emitting device layer, wherein the light-emitting device layer is disposed on the array substrate, and the light-emitting device layer comprises: an anode layer, disposed on the array substrate; A first light-emitting device layer is disposed on the anode layer, the first light-emitting device layer includes a first electron blocking layer and a first light-emitting layer, the first electron blocking layer is disposed on the anode layer, the first electron blocking layer includes a first electron blocking unit, a second electron blocking unit and a fifth electron blocking unit; the first light-emitting layer is disposed on the first electron blocking layer, the first light-emitting layer includes a first light-emitting unit, a second light-emitting unit and a fifth light-emitting unit, the first light-emitting unit is disposed on the first electron blocking unit, the second light-emitting unit is disposed on the second electron blocking unit, and the fifth light-emitting unit is disposed on the fifth electron blocking unit; A second light-emitting device layer is disposed on the first light-emitting device layer, the second light-emitting device layer includes a second electron blocking layer and a second light-emitting layer, the second electron blocking layer is disposed on the first light-emitting layer, the second electron blocking layer includes a third electron blocking unit, a fourth electron blocking unit and a sixth electron blocking unit, the third electron blocking unit is disposed on the first light-emitting unit, and the fourth electron blocking unit is disposed on the second light-emitting unit; the second light-emitting layer is disposed on the second electron blocking layer, the second light-emitting layer includes a third light-emitting unit, a fourth light-emitting unit and a sixth light-emitting unit, the third light-emitting unit is disposed on the third electron blocking unit, the fourth light-emitting unit is disposed on the fourth electron blocking unit, and the sixth light-emitting unit is disposed on the sixth electron blocking unit; a cathode layer, disposed on the second light emitting device layer; Among them, the ratio R1 of the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 4≤R1≤6; the ratio R2 of the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 14≤R2≤16.

[0007] Optionally, the edge of the first light-emitting unit is flush with the edge of the first electron blocking unit, the edge of the second light-emitting unit is flush with the edge of the second electron blocking unit, the edge of the third light-emitting unit is flush with the edge of the third electron blocking unit, and the edge of the fourth light-emitting unit is flush with the edge of the fourth electron blocking unit.

[0008] Optionally, an edge of the fifth light emitting unit is flush with an edge of the fifth electron blocking unit, and an edge of the sixth light emitting unit is flush with an edge of the sixth electron blocking unit.

[0009] Optionally, the thickness of one of the first electron blocking unit and the third electron blocking unit is greater than or equal to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is greater than the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit.

[0010] Optionally, a ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R3≤1; a ratio R3 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R4≤1, R3+R4=1.

[0011] Optionally, a ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R3≤0.19, and a ratio R3 of the thickness of the other of the third electron blocking units to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R4≤0.83; Alternatively, a ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R3≤0.83, and a ratio R4 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R4≤0.19.

[0012] Optionally, a ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 1≤R5≤1; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0≤R6≤1, R5+R6=1.

[0013] Optionally, a ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R5≤0.07; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R6≤0.95; Alternatively, a ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R5≤0.95; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R6≤0.07.

[0014] Optionally, a sum of thicknesses of the fifth electron blocking unit and the sixth electron blocking unit is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.

[0015] Optionally, the thickness of the fifth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers, and the thickness of the sixth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers.

[0016] Optionally, the fifth electron blocking unit and the sixth electron blocking unit have the same thickness.

[0017] Optionally, the first light emitting unit and the third light emitting unit are configured to emit green light, the second light emitting unit and the fourth light emitting unit are configured to emit red light, and the fifth light emitting unit and the sixth light emitting unit are configured to emit blue light.

[0018] Optionally, the first light emitting device layer further includes: A hole injection layer, disposed on the anode layer; A first hole transport layer is disposed on the hole injection layer, and the first electron blocking layer is disposed on the first hole transport layer; A first hole blocking layer, disposed on the first light-emitting layer; The first electron transport layer is disposed on the first hole blocking layer.

[0019] Optionally, the first light-emitting device layer further includes an N-type semiconductor layer, wherein the N-type semiconductor layer is disposed on the first electron transport layer, and the N-type semiconductor layer is configured to provide electrons to the first light-emitting device layer.

[0020] Optionally, the second light emitting device layer further includes: a second hole transport layer, disposed on the first light emitting device layer, and the second electron blocking layer is disposed on the second hole transport layer; A second hole blocking layer is disposed on the second light-emitting layer; A second electron transport layer is disposed on the second hole blocking layer; The electron injection layer is disposed on the second electron transport layer, and the cathode layer is disposed on the electron injection layer.

[0021] Optionally, the second light-emitting device layer further includes a P-type semiconductor layer, the P-type semiconductor layer is disposed on a surface of the second hole transport layer away from the second electron blocking layer, and the P-type semiconductor layer is configured to provide holes to the second light-emitting device layer.

[0022] An embodiment of the present application further provides a display device, which includes the display panel as described above.

[0023] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and a display device, the display panel includes an array substrate and a light-emitting device layer, the light-emitting device layer includes an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer, by reducing the thickness of the first electron blocking unit or the third electron blocking unit, and making the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit, and the ratio R1 of the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 4≤R1≤6, when there is no need to evaporate the first electron blocking unit or the second electron blocking unit with a smaller thickness, a baffle can be used to block the first electron blocking unit or the second electron blocking unit with a smaller thickness. Since the thickness of the first electron blocking unit or the second electron blocking unit is small, the failure time of the baffle can be extended so that the first electron blocking unit or the third electron blocking unit with a smaller thickness can be separated from the first electron blocking unit or the third electron blocking unit with a smaller thickness. The corresponding first light-emitting unit or third light-emitting unit is formed by etching with the same mask plate, which can not only reduce the number of mask plates, but also avoid the relative position offset between the first electron blocking unit or the third electron blocking unit formed by etching and the corresponding first light-emitting unit or the third light-emitting unit. Similarly, by reducing the thickness of the second electron blocking unit or the fourth electron blocking unit, and making the ratio R2 of the sum of the thickness of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 14≤R2≤16, it is also possible to reduce the number of mask plates while avoiding the relative position offset between the second electron blocking unit or the fourth electron blocking unit formed by etching and the corresponding second light-emitting unit and the fourth light-emitting unit, thereby ensuring the consistency and stability of the microcavity structure in the light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the structure of a first display panel provided in an embodiment of the present application; Figure 2 A schematic diagram of the structure of a second display panel provided in an embodiment of the present application; Figure 3 A schematic structural diagram of a third display panel provided in an embodiment of the present application; Figure 4A schematic structural diagram of a fourth display panel provided in an embodiment of the present application; Figure 5 A schematic structural diagram of a fifth display panel provided in an embodiment of the present application; Figure 6 A schematic structural diagram of a sixth display panel provided in an embodiment of the present application; Figure 7 A schematic structural diagram of a seventh display panel provided in an embodiment of the present application; Figure 8 A schematic structural diagram of an eighth display panel provided in an embodiment of the present application; Fig. 9 This is a schematic diagram of the structure of a display device according to an embodiment of the present application. DETAILED DESCRIPTION

[0025] The following descriptions of the embodiments are made with reference to the attached drawings to illustrate specific embodiments that the present application may be implemented in. The directional terms mentioned in the present application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present application, rather than to limit the present application. In the drawings, units with similar structures are represented by the same reference numerals.

[0026] The present application is further described below in conjunction with the accompanying drawings and specific embodiments.

[0027] The present application is further described below in conjunction with the accompanying drawings and specific embodiments.

[0028] An embodiment of the present application provides a display panel, which includes an array substrate and a light-emitting device layer, the light-emitting device layer is arranged on the array substrate, the light-emitting device layer includes an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer, the anode layer is arranged on the array substrate, the first light-emitting device layer is arranged on the anode layer, the first light-emitting device layer includes a first electron blocking layer and a first light-emitting layer, the first electron blocking layer is arranged on the anode layer, the first electron blocking layer includes a first electron blocking unit, a second electron blocking unit and a fifth electron blocking unit, the first light-emitting layer is arranged on the first electron blocking layer, the first light-emitting layer includes a first light-emitting unit, a second light-emitting unit and a fifth light-emitting unit, the first light-emitting unit is arranged on the first electron blocking unit, the second light-emitting unit is arranged on the second electron blocking unit, and the fifth light-emitting unit is arranged on the fifth electron blocking unit. The second light-emitting device layer is disposed on the first light-emitting device layer, the second light-emitting device layer includes a second electron blocking layer and a second light-emitting layer, the second electron blocking layer is disposed on the first light-emitting layer, the second electron blocking layer includes a third electron blocking unit, a fourth electron blocking unit and a sixth electron blocking unit, the third electron blocking unit is disposed on the first light-emitting layer, the fourth electron blocking unit is disposed on the second light-emitting layer, the second light-emitting layer is disposed on the second electron blocking layer, the second light-emitting layer includes a third light-emitting unit, a fourth light-emitting unit and a sixth light-emitting unit, the third light-emitting unit is disposed on the third electron blocking unit, the fourth light-emitting unit is disposed on the fourth electron blocking unit, and the sixth light-emitting unit is disposed on the sixth electron blocking unit. The cathode layer is disposed on the second light-emitting device layer. The thickness of one of the first electron blocking unit and the third electron blocking unit is smaller than the thickness of the other, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is smaller than the thickness of the other; the ratio R1 of the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 4≤R1≤6; the ratio R2 of the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 14≤R2≤16.

[0029] In an embodiment of the present application, by reducing the thickness of the first electron blocking unit or the third electron blocking unit, and making the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit, and the ratio R1 of the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 4≤R1≤6, when there is no need to evaporate the first electron blocking unit or the second electron blocking unit with a smaller thickness, a baffle can be used to shield the first electron blocking unit or the second electron blocking unit with a smaller thickness. Since the thickness of the first electron blocking unit or the second electron blocking unit is small, the failure time of the baffle can be extended, so that the first electron blocking unit or the third electron blocking unit with a smaller thickness can be etched with the corresponding first light-emitting unit or the third light-emitting unit using the same mask plate, which can not only reduce the mask The number of plates can also be reduced, and the relative position of the first electron blocking unit or the third electron blocking unit formed by etching and the corresponding first light-emitting unit or the third light-emitting unit can be avoided from being offset. Similarly, by reducing the thickness of the second electron blocking unit or the fourth electron blocking unit, and making the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit, and the ratio R2 of the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 14≤R2≤16, the relative position of the second electron blocking unit or the fourth electron blocking unit formed by etching and the corresponding second light-emitting unit and the fourth light-emitting unit can be avoided from being offset while reducing the number of mask plates, thereby ensuring the consistency and stability of the microcavity structure in the light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0030] See also Figure 1 , Figure 1 This is a schematic structural diagram of a first display panel provided in an embodiment of the present application. The display panel 100 includes an array substrate 1 and a light-emitting device layer 2 . The light-emitting device layer 2 is disposed on the array substrate 1 .

[0031] In some embodiments, the array substrate 1 includes a substrate and a driving circuit layer (not shown in the figure), and the driving circuit layer is arranged on the substrate.

[0032] In some embodiments, the substrate may be a single-layer structure formed by an organic material or an inorganic material, or a multi-layer structure formed by stacking an organic material and an inorganic material. The organic material may be polyimide, and the inorganic material may be selected from at least one of glass, silicon nitride, silicon oxide, and silicon oxynitride.

[0033] In some embodiments, the driving circuit layer can be a multilayer structure composed of a semiconductor layer, a conductive layer, an inorganic insulating layer and an organic insulating layer. The driving circuit layer can be replaced by the film layer structure of the driving circuit layer in the existing display panel, which will not be elaborated here.

[0034] In some embodiments, see Figure 1 The light-emitting device layer 2 includes an anode layer 21, a first light-emitting device layer 22, a second light-emitting device layer 23 and a cathode layer 24. The anode layer 21 is arranged on the array substrate 1, the first light-emitting device layer 22 is arranged on the anode layer 21, the second light-emitting device layer 23 is arranged on the first light-emitting device layer 22, and the cathode layer 24 is arranged on the second light-emitting device layer 23.

[0035] It should be noted that, the anode layer 21 being arranged on the array substrate 1 may refer to that the anode layer 21 is located above the array substrate 1, and the anode layer 21 is in direct contact with the upper surface of the array substrate 1, or it may refer to that the anode layer 21 is located above the array substrate 1, and an insulating layer is arranged between the anode layer 21 and the upper surface of the array substrate 1, and the insulating layer insulates the anode layer 21 from the array substrate 1. The relevant description of other film layers may refer to the anode layer 21, and will not be repeated here.

[0036] See also Figure 1 The first light-emitting device layer 22 includes a first electron blocking layer 221 and a first light-emitting layer 222. The first electron blocking layer 221 is disposed on the anode layer 21. The first electron blocking layer 221 includes a first electron blocking unit 2211 and a second electron blocking unit 2212. The first electron blocking unit 2211 and the second electron blocking unit 2212 are disposed on the same layer. The first light-emitting layer 222 is disposed on the first electron blocking layer 221. The first light-emitting layer 222 includes a first light-emitting unit 2221 and a second light-emitting unit 2222. The first light-emitting unit 2221 is disposed on the first electron blocking unit 2211, and the second light-emitting unit 2222 is disposed on the second electron blocking unit 2212.

[0037] See also Figure 1 The second light-emitting device layer 23 includes a second electron blocking layer 231 and a second light-emitting layer 232. The second electron blocking layer 231 is disposed on the first light-emitting layer 222. The second electron blocking layer 231 includes a third electron blocking unit 2311 and a fourth electron blocking unit 2312. The third electron blocking unit 2311 is disposed on the first light-emitting unit 2221, and the fourth electron blocking unit 2312 is disposed on the second light-emitting layer 232. The second light-emitting layer 232 is disposed on the second electron blocking layer 231. The second light-emitting layer 232 includes a third light-emitting unit 2321 and a fourth light-emitting unit 2322. The third light-emitting unit 2321 is disposed on the third electron blocking unit 2311, and the fourth light-emitting unit 2322 is disposed on the fourth electron blocking unit 2312.

[0038] In an embodiment of the present application, the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 is smaller than the thickness of the other, and the thickness of one of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is smaller than the thickness of the other.

[0039] In some embodiments, see Figure 1 , the thickness of the first electron blocking unit 2211 is smaller than the thickness of the third electron blocking unit 2311 , and the thickness of the second electron blocking unit 2212 is smaller than the thickness of the fourth electron blocking unit 2312 .

[0040] It should be noted that, in the evaporation process, if the first electron blocking unit 2211 and the first light-emitting unit 2221 are to be placed in the same evaporation chamber and share a FMM, the evaporation source of the first electron blocking unit 2211 and the evaporation source of the first light-emitting unit 2221 need to be placed in the same evaporation chamber. After the first electron blocking unit 2211 is evaporated, the evaporation source of the first electron blocking unit 2211 needs to be shielded with a baffle before the first light-emitting unit 2221 can be evaporated, so that the material in the evaporation source of the first electron blocking unit 2211 can be deposited on the baffle, preventing the first electron blocking unit 2211 and the first light-emitting unit 2221 from being deposited on the panel at the same time and mixing. If the thickness of the first electron blocking unit 2211 is large, the deposition rate of the first electron blocking unit 2211 will increase accordingly. In the same evaporation time, the material of the first electron blocking layer deposited on the baffle will also increase, which will shorten the failure time of the baffle. When too much material is deposited on the baffle, the baffle will collapse and a gap will be generated between the baffle and the evaporation source. The material of the first electron blocking layer will overflow from the gap between the baffle and the evaporation source and be deposited on the display panel and mixed with the material of the first light-emitting unit 2221, resulting in reduced luminous efficiency and service life of the first light-emitting unit 2221. In this embodiment, the thickness of the first electron blocking unit 2211 is thinned to reduce the material of the foreign electron blocking layer deposited on the baffle under the same evaporation time, so that the expiration time of the baffle can be extended, so that the baffle can be used from the last mass production to the next mass production (one mass production can produce multiple batches of display panels), so the first electron blocking unit 2211 and the first light-emitting unit 2221 can be placed in the same evaporation chamber to share a FMM, which can not only reduce the number of mask plates, but also avoid the relative position offset of the first electron blocking unit formed by etching and the corresponding first light-emitting unit, and avoid the material of the first electron blocking layer and the material of the first light-emitting unit 2221 from mixing to affect the luminous efficiency and service life of the first light-emitting unit 2221, thereby ensuring the consistency and stability of the microcavity structure of the light-emitting device corresponding to the first light-emitting unit 2221 in the first light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0041] Similar to the above-mentioned embodiment, in this embodiment, by making the thickness of the second electron blocking unit 2212 smaller than the thickness of the fourth electron blocking unit 2312, the second electron blocking unit 2212 and the second light-emitting unit 2222 can be placed in the same evaporation chamber to share a FMM. This can not only reduce the number of mask plates, but also avoid the relative position offset between the second electron blocking unit 2212 formed by etching and the corresponding second light-emitting unit 2222, and avoid the material of the second electron blocking unit 2212 and the material of the second light-emitting unit 2222 from mixing to affect the luminous efficiency and service life of the second light-emitting unit 2222, thereby ensuring the consistency and stability of the microcavity structure of the light-emitting device corresponding to the second light-emitting unit 2222 in the first light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0042] In some embodiments, see Figure 1 , the edge of the first light-emitting unit 2221 is flush with the edge of the first electron blocking unit 2211, and the edge of the second light-emitting unit 2222 is flush with the edge of the second electron blocking unit 2212. It should be noted that, since the first light-emitting unit 2221 and the first electron blocking unit 2211 are prepared using the same mask plate in the same evaporation chamber, the relative position relationship between the first light-emitting unit 2221 and the second light-emitting unit 2222 will not be offset, so the edge of the first light-emitting unit 2221 can be flush with the edge of the first electron blocking unit 2211, so that the consistency and stability of the microcavity structure of the light-emitting device corresponding to the first light-emitting unit 2221 can be improved, thereby improving the light extraction efficiency of the light-emitting device corresponding to the first light-emitting unit 2221.

[0043] In some embodiments, see Figure 1 The first electron blocking layer 221 further includes a fifth electron blocking unit 2213, the first light-emitting layer 222 further includes a fifth light-emitting unit 2223, and the fifth light-emitting unit 2223 is disposed on the fifth electron blocking unit 2213. The second electron blocking layer 231 further includes a sixth electron blocking unit 2313, the second light-emitting layer 232 further includes a sixth light-emitting unit 2323, the sixth electron blocking unit 2313 is disposed on the fifth light-emitting unit 2223, and the sixth light-emitting unit 2323 is disposed on the sixth electron blocking unit 2313.

[0044] In some embodiments, see Figure 1 The sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is greater than the sum of the thicknesses of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 , and the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is greater than the sum of the thicknesses of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 .

[0045] In some embodiments, see Figure 1 , the first light emitting unit 2221 and the third light emitting unit 2321 are configured to emit green light, the second light emitting unit 2222 and the fourth light emitting unit 2322 are configured to emit red light, and the fifth light emitting unit 2223 and the sixth light emitting unit 2323 are configured to emit blue light. Since the wavelengths of red light and green light are both greater than the wavelength of blue light, by making the cavity length of the microcavity structure of the light emitting device corresponding to the first light emitting unit 2221 and the third light emitting unit 2321 greater than the cavity length of the microcavity structure of the light emitting device corresponding to the fifth light emitting unit 2223 and the sixth light emitting unit 2323, and making the cavity length of the microcavity structure of the light emitting device corresponding to the second light emitting unit 2222 and the fourth light emitting unit 2322 greater than the cavity length of the microcavity structure of the light emitting device corresponding to the fifth light emitting unit 2223 and the sixth light emitting unit 2323, light emitting devices of different colors can have microcavity structures with their respective optimal cavity lengths, thereby improving the luminous efficiency and service life of the light emitting device.

[0046] In some embodiments, see Figure 1 , the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 is greater than the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 .

[0047] In some embodiments, see Figure 1 , an edge of the fifth light emitting unit 2223 is flush with an edge of the fifth electron blocking unit 2213 , and an edge of the sixth light emitting unit 2323 is flush with an edge of the sixth electron blocking unit 2313 . It should be noted that since the wavelength of blue light is shorter than that of red light and green light, the cavity length of the microcavity structure of the light-emitting device corresponding to the fifth light-emitting unit 2223 and the sixth light-emitting unit 2323 is the shortest, and the thickness of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 is the smallest. In this way, the fifth electron blocking unit 2213 and the fifth light-emitting unit 2223 can be prepared by sharing the same mask plate, and the sixth electron blocking unit 2313 and the sixth light-emitting unit 2323 can share the same mask plate. In this way, not only two mask plates can be reduced, but also the edge of the fifth light-emitting unit 2223 can be flush with the edge of the fifth electron blocking unit 2213, and the edge of the sixth light-emitting unit 2323 can be flush with the edge of the sixth electron blocking unit 2313. In this way, the consistency and stability of the microcavity structure of the light-emitting device corresponding to the fifth light-emitting unit 2223 and the sixth light-emitting unit 2323 can be improved, thereby improving the luminous efficiency of the light-emitting device corresponding to the fifth light-emitting unit 2223 and the sixth light-emitting unit 2323.

[0048] In some embodiments, the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 is greater than or equal to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313, and the thickness of one of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is greater than the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313. It should be noted that the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 should not be too thin. If it is too thin, the luminous efficiency and service life of the first light-emitting unit 2221 and the third light-emitting unit 2321 will be reduced. By making the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 greater than or equal to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313, the luminous efficiency and service life of the first light-emitting unit 2221 and the third light-emitting unit 2321 can be ensured while ensuring that one of the first electron blocking unit 2211 and the third electron blocking unit 2311 can be prepared using the same mask plate as the corresponding first light-emitting unit 2221 or the third light-emitting unit 2321.

[0049] In some embodiments, see Figure 1 , the thickness of the first electron blocking unit 2211 is equal to the thickness of the fifth electron blocking unit 2213, and the thickness of the third electron blocking unit 2311 is greater than the thickness of the sixth electron blocking unit 2313. The thickness of the second electron blocking unit 2212 is equal to the thickness of the fifth electron blocking unit 2213, and the thickness of the fourth electron blocking unit 2312 is greater than the thickness of the sixth electron blocking unit 2313, so that the light-emitting devices corresponding to the first electron blocking unit 2211 and the third electron blocking unit 2311 and the light-emitting devices corresponding to the second electron blocking unit 2212 and the fourth electron blocking unit 2312 can be ensured to have the best microcavity structure length, while making the first electron blocking unit 2211 and the first light-emitting unit 2221 share the same mask plate, and the second electron blocking unit 2212 and the second light-emitting unit 2222 share the same mask plate, thereby reducing two mask plates, thereby not only reducing the number of mask plates, but also improving the consistency and stability of the microcavity structure of the light-emitting device, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0050] In some embodiments, see Figure 1, the first electron blocking unit 2211 and the first light-emitting unit 2221 share the same mask plate, the second electron blocking unit 2212 and the second light-emitting unit 2222 share the same mask plate, the fifth electron blocking unit 2213 and the fifth light-emitting unit 2223 share the same mask plate, the sixth electron blocking unit 2313 and the sixth light-emitting unit 2323 share the same mask plate, the third electron blocking unit 2311 and the third light-emitting unit 2321 each use a mask plate, the fourth electron blocking unit 2312 and the fourth light-emitting unit 2322 each use a mask plate, that is, Figure 1 The first light emitting device layer 22 and the second light emitting device layer 23 of the display panel shown need to use 8 mask plates in total. Compared with the existing process, 2 mask plates can be saved, thereby reducing the production cost.

[0051] In some embodiments, the ratio R1 of the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 satisfies: 4≤R1≤6. For example, the ratio R1 of the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 is any one of 4, 4.5, 5, 5.5 or 6, and only needs to be between 4 and 6 to ensure that the cavity length of the light-emitting device corresponding to the first electron blocking unit 2211 and the third electron blocking unit 2311 is the optimal length, thereby improving the luminous efficiency and service life of the light-emitting device corresponding to the first electron blocking unit 2211 and the third electron blocking unit 2311.

[0052] In some embodiments, the ratio R2 of the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 satisfies: 14≤R2≤16. For example, the ratio R2 of the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the thickness of any one of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 is any one of 14, 14.5, 15, 15.5 or 16, and only needs to be between 14 and 16 to ensure that the cavity length of the light-emitting device corresponding to the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is the optimal length, thereby improving the luminous efficiency and service life of the light-emitting device corresponding to the second electron blocking unit 2212 and the fourth electron blocking unit 2312.

[0053] In some embodiments, a ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0≤R3≤1. A ratio R3 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0≤R4≤1, R3+R4=1.

[0054] In some embodiments, the ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 1≤R5≤1; the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0≤R6≤1, R5+R6=1.

[0055] In some embodiments, a ratio R3 of the thickness of one of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19; a ratio R4 of the thickness of the other of the first electron blocking unit 2211 and the third electron blocking unit 2311 to the sum of the thicknesses of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83.

[0056] In some embodiments, the ratio R5 of the thickness of one of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07; the ratio R6 of the thickness of the other of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 to the sum of the thicknesses of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95.

[0057] In some embodiments, see Figure 1, the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19, the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95.

[0058] In some embodiments, see Figure 1 , the sum of the thicknesses of the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.

[0059] In some embodiments, see Figure 1 , the thickness of the fifth electron blocking unit 2213 is greater than or equal to 3 nanometers and less than or equal to 7 nanometers, and the thickness of the sixth electron blocking unit 2313 is greater than or equal to 3 nanometers and less than or equal to 7 nanometers.

[0060] In some embodiments, the fifth electron blocking unit 2213 and the sixth electron blocking unit 2313 have the same thickness.

[0061] In some embodiments, see Figure 1 The first light-emitting device layer 22 also includes a hole injection layer 223, a first hole transport layer 224, a first hole blocking layer 225 and a first electron transport layer 226. The hole injection layer 223 is arranged on the anode layer 21, the first hole transport layer 224 is arranged on the hole injection layer 223, the first electron blocking layer 221 is arranged on the first hole transport layer 224, the first hole blocking layer 225 is arranged on the first light-emitting layer 222, and the first electron transport layer 226 is arranged on the first hole blocking layer 225.

[0062] In some embodiments, see Figure 1 The first light emitting device layer 22 further includes an N-type semiconductor layer 227 . The N-type semiconductor layer 227 is disposed on the first electron transport layer 226 . The N-type semiconductor layer 227 is configured to provide electrons to the first light emitting device layer 22 .

[0063] In some embodiments, see Figure 1The second light-emitting device layer 23 also includes a second hole transport layer 233, a second hole blocking layer 234, a second electron transport layer 235 and an electron injection layer 236. The second hole transport layer 233 is arranged on the first light-emitting device layer 22, the second electron blocking layer 231 is arranged on the second hole transport layer 233, the second hole blocking layer 234 is arranged on the second light-emitting layer 232, the second electron transport layer 235 is arranged on the second hole blocking layer 234, the electron injection layer 236 is arranged on the second electron transport layer 235, and the cathode layer 24 is arranged on the electron injection layer 236.

[0064] In some embodiments, see Figure 1 The second light emitting device layer 23 further includes a P-type semiconductor layer 237 , which is disposed on a surface of the second hole transport layer 233 away from the second electron blocking layer 231 , and is configured to provide holes to the second light emitting device layer 23 .

[0065] It should be noted that the charge generation layer (CGL) is a unique structure of the stacked organic light-emitting diode device that is different from the single-layer organic light-emitting diode device. The charge generation layer consists of two film layers, namely the N-type semiconductor layer 227 (NCGL) and the P-type semiconductor layer 237 (PCGL). It has the ability to generate charge and provide holes and electrons for the multilayer light-emitting device. The N-type semiconductor layer 227 is made by doping metals (generally metals Yb, Li, Cs, Mg, etc.) in organic electron transport materials. The organic electron transport material in the N-type semiconductor layer 227 requires an electron mobility μe ≥ 10-3 cm2 / Vs. The P-type semiconductor layer 237 is usually composed of metal oxides (such as ITO, WO3, MoO3, V2O5, etc.) or hole transport materials doped with Lewis acids (such as FeCl3: NPB, F4-TCNQ: NPB), and the organic hole transport material is required to have a hole mobility μh ≥ 10-2 cm2 / Vs.

[0066] In some embodiments, see Figure 2 , Figure 2 A schematic diagram of the structure of a second display panel provided in an embodiment of the present application, which has a structure similar to Figure 1The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 0, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 1. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 0, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 1, that is, the thickness of the first electron blocking unit 2211 and the second electron blocking unit 2212 are both 0, that is, Figure 2 The embodiment shown removes the first electron blocking unit 2211 and the second electron blocking unit 2212 in the first light-emitting device layer 22, and retains the third electron blocking unit 2311 and the fourth electron blocking unit 2312. The ratio of the thickness of the third electron blocking unit 2311 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6, and the ratio of the thickness of the fourth electron blocking unit 2312 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 14 and less than or equal to 16. In this way, by removing the first electron blocking unit 2211 and the second electron blocking unit 2212, two mask plates can be saved, so that Figure 2 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require the use of 8 mask plates. Compared with the existing process, 2 mask plates can be saved, thereby reducing the production cost. This can also save two mask plates, which can not only reduce the production cost but also improve the luminous efficiency of the light-emitting device.

[0067] It should be noted that there are multiple leakage paths in the film structure of the display panel, and the main leakage path is the path realized through the charge generation layer. For example, when only the first light-emitting unit 2221 is lit, the second light-emitting unit 2222 will also be lit. This phenomenon is more obvious at low brightness because part of the charge that lights up the first light-emitting unit 2221 flows through the charge generation layer (i.e., the N-type semiconductor layer 227) to the second light-emitting unit 2222, causing the circuit of the second light-emitting unit 2222 to be turned on, so that the second light-emitting unit 2222 is lit. While most of the charges flow from the charge generation layer to the adjacent light-emitting unit, a small part of the charges flow from the first electron blocking layer 221 or the second electron blocking layer 231 to the adjacent pixel. Similarly, there will be leakage current between the electron blocking units corresponding to light-emitting units of different colors. This application Figure 2In the embodiment shown, by setting the thickness of the first electron blocking unit 2211 and the second electron blocking unit 2212 to 0, the first electron blocking unit 2211 and the second electron blocking unit 2212 are removed, thereby cutting off the path for the charge to flow from the first light-emitting unit 2221 through the first electron blocking unit 2211 and the second electron blocking unit 2212 to the second light-emitting unit 2222, thereby reducing the leakage current between the first light-emitting unit 2221 and the second light-emitting unit 2222, and reducing the probability of the second light-emitting unit 2222 lighting up due to the leakage current.

[0068] In some embodiments, see Figure 3 , Figure 3 A schematic diagram of the structure of a third display panel provided in an embodiment of the present application, which has a structure similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 0, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 1. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95, that is, the thickness of the first electron blocking unit 2211 is 0, that is, Figure 3 In the embodiment shown, the first electron blocking unit 2211 in the first light-emitting device layer 22 is removed, and the second electron blocking unit 2212, the third electron blocking unit 2311 and the fourth electron blocking unit 2312 are retained. The ratio of the thickness of the third electron blocking unit 2311 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6. In this way, by removing the first electron blocking unit 2211 and making the second electron blocking unit 2212 and the second light-emitting unit 2222 share a mask plate, Figure 3 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only require the use of 8 mask plates. Compared with the existing process, 2 mask plates can be saved, thereby reducing the production cost. This can also save two mask plates, which can not only reduce the production cost but also improve the luminous efficiency of the light-emitting device.

[0069] In some embodiments, see Figure 4 , Figure 4 A schematic diagram of the structure of a fourth display panel provided in an embodiment of the present application, which has a structure similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 0, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 1, that is, the thickness of the second electron blocking unit 2212 is 0, that is, Figure 4 In the embodiment shown, the second electron blocking unit 2212 in the first light-emitting device layer 22 is removed, and the first electron blocking unit 2211, the third electron blocking unit 2311 and the fourth electron blocking unit 2312 are retained, and the ratio of the thickness of the fourth electron blocking unit 2312 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 14 and less than or equal to 16. In this way, by removing the second electron blocking unit 2212 and making the first electron blocking unit 2211 and the first light-emitting unit 2221 share a mask plate, Figure 4 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only need to use 8 mask plates, which can save 2 mask plates compared with the existing process, thereby not only reducing the production cost but also improving the luminous efficiency of the light-emitting device.

[0070] In some embodiments, see Figure 5 , Figure 5 A schematic diagram of the structure of a fifth display panel provided in an embodiment of the present application, which has a structure similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 1, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 is 0. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95, that is, the thickness of the third electron blocking unit 2311 is 0, that is, Figure 5In the embodiment shown, the third electron blocking unit 2311 in the second light-emitting device layer 23 is removed, and the first electron blocking unit 2211, the second electron blocking unit 2212 and the fourth electron blocking unit 2312 are retained. The ratio of the thickness of the second electron blocking unit 2212 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6. In this way, by removing the third electron blocking unit 2311 and making the second electron blocking unit 2212 and the second light-emitting unit 2222 share a mask plate, Figure 5 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only need to use 8 mask plates, which can save 2 mask plates compared with the existing process, thereby not only reducing the production cost but also improving the luminous efficiency of the light-emitting device.

[0071] In some embodiments, see Figure 6 , Figure 6 A schematic diagram of the structure of a sixth display panel provided in an embodiment of the present application, which has a structure similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19, and the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 1, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 is 0, that is, the thickness of the fourth electron blocking unit 2312 is 0, that is, Figure 6 In the embodiment shown, the fourth electron blocking unit 2312 in the second light-emitting device layer 23 is removed, and the first electron blocking unit 2211, the second electron blocking unit 2212 and the third electron blocking unit 2311 are retained. The ratio of the thickness of the second electron blocking unit 2212 to the thickness of the fifth electron blocking unit 2213 is greater than or equal to 4 and less than or equal to 6. In this way, by removing the fourth electron blocking unit 2312 and making the first electron blocking unit 2211 and the first light-emitting unit 2221 share a mask plate, Figure 6 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only need to use 8 mask plates, which can save 2 mask plates compared with the existing process, thereby not only reducing the production cost but also improving the luminous efficiency of the light-emitting device.

[0072] In some embodiments, see Figure 7 , Figure 7 A schematic diagram of the structure of a seventh display panel provided in an embodiment of the present application, which has a structure similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R3≤0.83, the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R4≤0.19. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R5≤0.07, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R6≤0.95. Figure 7 In the embodiment shown in the figure, by making the second electron blocking unit 2212 and the second light emitting unit 2222 share a mask plate, and making the third electron blocking unit 2311 and the third light emitting unit 2321 share a mask plate, Figure 7 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only need to use 8 mask plates, which can save 2 mask plates compared with the existing process, thereby not only reducing the production cost but also improving the luminous efficiency of the light-emitting device.

[0073] In some embodiments, see Figure 8 , Figure 8 A schematic diagram of the structure of an eighth display panel provided in an embodiment of the present application, which has a structure similar to Figure 1 The structure of the first display panel shown is substantially the same, except that: the ratio R3 of the thickness of the first electron blocking unit 2211 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.17≤R3≤0.19, the ratio R4 of the thickness of the third electron blocking unit 2311 to the sum of the thickness of the first electron blocking unit 2211 and the third electron blocking unit 2311 satisfies: 0.81≤R4≤0.83. The ratio R5 of the thickness of the second electron blocking unit 2212 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.93≤R5≤0.95, and the ratio R6 of the thickness of the fourth electron blocking unit 2312 to the sum of the thickness of the second electron blocking unit 2212 and the fourth electron blocking unit 2312 satisfies: 0.05≤R6≤0.07. Figure 8In the embodiment shown in the figure, by making the first electron blocking unit 2211 and the first light emitting unit 2221 share a mask plate, and making the fourth electron blocking unit 2312 and the fourth light emitting unit 2322 share a mask plate, Figure 8 The first light-emitting device layer 22 and the second light-emitting device layer 23 of the display panel shown only need to use 8 mask plates, which can save 2 mask plates compared with the existing process, thereby not only reducing the production cost but also improving the luminous efficiency of the light-emitting device.

[0074] According to the display panel provided in the above embodiment of the present application, the embodiment of the present application further provides a display device, see Fig. 9 , Fig. 9 1 is a schematic diagram of the structure of a display device according to an embodiment of the present application, wherein the display device 1000 comprises a housing 200 and a display panel 100 as provided in any of the above embodiments, and the display panel 100 is disposed on the housing 200. The display device provided in the embodiment of the present application can achieve the same technical effect as the display panel provided in any of the above embodiments, and will not be described in detail here.

[0075] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and a display device, wherein the display panel includes an array substrate and a light-emitting device layer, wherein the light-emitting device layer includes an anode layer, a first light-emitting device layer, a second light-emitting device layer and a cathode layer, and by reducing the thickness of the first electron blocking unit or the third electron blocking unit, and making the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit, and the ratio R1 of the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 4≤R1≤6, when the first electron blocking unit or the second electron blocking unit with a smaller thickness does not need to be evaporated, a baffle can be used to shield the first electron blocking unit or the second electron blocking unit with a smaller thickness. Since the thickness of the first electron blocking unit or the second electron blocking unit is smaller, the failure time of the baffle can be extended so that the first electron blocking unit or the third electron blocking unit with a smaller thickness can be with the corresponding The first light-emitting unit or the third light-emitting unit is formed by etching with the same mask plate, which can not only reduce the number of mask plates, but also avoid the relative position offset between the first electron blocking unit or the third electron blocking unit formed by etching and the corresponding first light-emitting unit or the third light-emitting unit. Similarly, by reducing the thickness of the second electron blocking unit or the fourth electron blocking unit, and making the ratio R2 of the sum of the thickness of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfy: 14≤R2≤16, it is also possible to reduce the number of mask plates while avoiding the relative position offset between the second electron blocking unit or the fourth electron blocking unit formed by etching and the corresponding second light-emitting unit and the fourth light-emitting unit, thereby ensuring the consistency and stability of the microcavity structure in the light-emitting device layer, thereby improving the light extraction efficiency of the light-emitting device in the display panel.

[0076] In summary, although the present application is disclosed as above with preferred embodiments, the above preferred embodiments are not intended to limit the present application. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application is based on the scope defined by the claims.

Claims

1. A display panel, characterized in that: The invention comprises an array substrate and a light emitting device layer, wherein the light emitting device layer is arranged on the array substrate, and the light emitting device layer comprises: an anode layer, disposed on the array substrate; A first light-emitting device layer is disposed on the anode layer, the first light-emitting device layer includes a first electron blocking layer and a first light-emitting layer, the first electron blocking layer is disposed on the anode layer, the first electron blocking layer includes a first electron blocking unit, a second electron blocking unit and a fifth electron blocking unit; the first light-emitting layer is disposed on the first electron blocking layer, the first light-emitting layer includes a first light-emitting unit, a second light-emitting unit and a fifth light-emitting unit, the first light-emitting unit is disposed on the first electron blocking unit, the second light-emitting unit is disposed on the second electron blocking unit, and the fifth light-emitting unit is disposed on the fifth electron blocking unit; A second light-emitting device layer is disposed on the first light-emitting device layer, the second light-emitting device layer includes a second electron blocking layer and a second light-emitting layer, the second electron blocking layer is disposed on the first light-emitting layer, the second electron blocking layer includes a third electron blocking unit, a fourth electron blocking unit and a sixth electron blocking unit, the third electron blocking unit is disposed on the first light-emitting unit, and the fourth electron blocking unit is disposed on the second light-emitting unit; the second light-emitting layer is disposed on the second electron blocking layer, the second light-emitting layer includes a third light-emitting unit, a fourth light-emitting unit and a sixth light-emitting unit, the third light-emitting unit is disposed on the third electron blocking unit, the fourth light-emitting unit is disposed on the fourth electron blocking unit, and the sixth light-emitting unit is disposed on the sixth electron blocking unit; a cathode layer, disposed on the second light emitting device layer; Among them, the thickness of one of the first electron blocking unit and the third electron blocking unit is smaller than the thickness of the other, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is smaller than the thickness of the other; the ratio R1 of the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 4≤R1≤6; the ratio R2 of the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit satisfies: 14≤R2≤16.

2. The display panel according to claim 1, wherein: The edge of the first light emitting unit is flush with the edge of the first electron blocking unit, or the edge of the third light emitting unit is flush with the edge of the third electron blocking unit; An edge of the second light emitting unit is flush with an edge of the second electron blocking unit, or an edge of the fourth light emitting unit is flush with an edge of the fourth electron blocking unit.

3. The display panel according to claim 1, wherein: An edge of the fifth light emitting unit is flush with an edge of the fifth electron blocking unit, and an edge of the sixth light emitting unit is flush with an edge of the sixth electron blocking unit.

4. The display panel according to claim 1, wherein: The thickness of one of the first electron blocking unit and the third electron blocking unit is greater than or equal to the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit, and the thickness of one of the second electron blocking unit and the fourth electron blocking unit is greater than the thickness of any one of the fifth electron blocking unit and the sixth electron blocking unit.

5. The display panel according to claim 1, wherein: A ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R3≤1; a ratio R3 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0≤R4≤1, R3+R4=1.

6. The display panel according to claim 5, wherein: The ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R3≤0.19, and the ratio R3 of the thickness of the other of the third electron blocking units to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R4≤0.83; Alternatively, a ratio R3 of the thickness of the first electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.81≤R3≤0.83, and a ratio R4 of the thickness of the third electron blocking unit to the sum of the thicknesses of the first electron blocking unit and the third electron blocking unit satisfies: 0.17≤R4≤0.

19.

7. The display panel according to claim 1, wherein: A ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 1≤R5≤1; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0≤R6≤1, R5+R6=1.

8. The display panel according to claim 7, wherein: The ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R5≤0.07; the ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R6≤0.95; Alternatively, a ratio R5 of the thickness of the second electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.93≤R5≤0.95; a ratio R6 of the thickness of the fourth electron blocking unit to the sum of the thicknesses of the second electron blocking unit and the fourth electron blocking unit satisfies: 0.05≤R6≤0.

07.

9. The display panel according to claim 1, wherein: A sum of thicknesses of the fifth electron blocking unit and the sixth electron blocking unit is greater than or equal to 8 nanometers and less than or equal to 12 nanometers.

10. The display panel according to claim 9, wherein: The thickness of the fifth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers, and the thickness of the sixth electron blocking unit is greater than or equal to 3 nanometers and less than or equal to 7 nanometers.

11. The display panel according to claim 9, wherein: The fifth electron blocking unit and the sixth electron blocking unit have the same thickness.

12. The display panel according to any one of claims 1 to 11, characterized in that: The first light emitting unit and the third light emitting unit are configured to emit green light, the second light emitting unit and the fourth light emitting unit are configured to emit red light, and the fifth light emitting unit and the sixth light emitting unit are configured to emit blue light.

13. The display panel according to any one of claims 1 to 11, characterized in that: The first light emitting device layer further comprises: A hole injection layer, disposed on the anode layer; A first hole transport layer is disposed on the hole injection layer, and the first electron blocking layer is disposed on the first hole transport layer; A first hole blocking layer, disposed on the first light-emitting layer; The first electron transport layer is disposed on the first hole blocking layer.

14. The display panel according to claim 13, wherein: The first light emitting device layer further includes an N-type semiconductor layer, wherein the N-type semiconductor layer is disposed on the first electron transport layer, and the N-type semiconductor layer is configured to provide electrons to the first light emitting device layer.

15. The display panel according to any one of claims 1 to 11, characterized in that: The second light emitting device layer further comprises: a second hole transport layer, disposed on the first light emitting device layer, and the second electron blocking layer is disposed on the second hole transport layer; A second hole blocking layer is disposed on the second light-emitting layer; A second electron transport layer is disposed on the second hole blocking layer; The electron injection layer is disposed on the second electron transport layer, and the cathode layer is disposed on the electron injection layer.

16. The display panel according to claim 15, wherein: The second light emitting device layer further includes a P-type semiconductor layer, which is disposed on a surface of the second hole transport layer away from the second electron blocking layer, and is configured to provide holes to the second light emitting device layer.

17. A display device, characterized in that: Comprising the display panel as claimed in any one of claims 1 to 16.

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