Pixel unit and preparation method thereof, display panel and display device

Abstract

The invention discloses a pixel unit and a preparation method thereof, a display panel and a display device, and relates to the technical field of display. Each pixel unit comprises a first electrode, a functional layer and a second electrode which are stacked; the second electrode comprises a first sub-electrode arranged on the functional layer, a plurality of first resistive units sequentially arranged on the first sub-electrode at intervals, and a plurality of second sub-electrodes correspondingly arranged on the first resistive units. The pixel unit provided by the invention comprises a plurality of first resistive units and a plurality of second sub-electrodes correspondingly arranged on the plurality of first resistive units, so that a single pixel unit is divided into a plurality of pixel units, and accurate matching and compensation of current of each region in the pixel unit can be realized; therefore, the display quality and the luminous efficiency of the pixel unit are improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a pixel unit, a method for preparing the pixel unit, and a display device including the pixel unit. Background Art

[0002] Currently, the widely used light-emitting devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLED has become the mainstream technology in the field of display technology due to its excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence, and has become a strong competitor of OLED in recent years.

[0003] Pixels determine the size and clarity of images on OLED and QLED screens. In order to meet market demand, higher stability and yield are required. However, in the existing light-emitting device process, the pixels of the display may be inconsistent due to the non-uniformity and characteristic changes of thin-film transistors (TFTs). In terms of the performance of light-emitting devices, it is difficult to maintain consistency in the thickness of the thin film within the pixel grid, and different thicknesses of the functional layers will also lead to a decrease in the luminous efficiency of the light-emitting device, thereby reducing the luminous efficiency of the pixel unit.

[0004] Currently, the luminous efficiency of pixel units is relatively low and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a pixel unit, aiming to improve the problem of low light emission efficiency of existing pixel units.

[0006] An embodiment of the present application is implemented as follows: a pixel unit includes: a first electrode, a functional layer, and a second electrode that are stacked together; wherein the second electrode includes a first sub-electrode arranged on the functional layer, a plurality of first resistive switching units that are sequentially and spaced apart from each other on the first sub-electrode, and a plurality of second sub-electrodes that are correspondingly arranged on the plurality of first resistive switching units.

[0007] Optionally, in some embodiments of the present application, the second electrode further includes a plurality of second resistive switching units correspondingly arranged on the plurality of second sub-electrodes, and at least one third sub-electrode arranged across the plurality of second resistive switching units.

[0008] Optionally, in some embodiments of the present application, projections of a plurality of the second sub-electrodes and the first sub-electrode on the functional layer have a plurality of first intersections, and projections of a plurality of the first resistive switching units on the functional layer correspond one-to-one to the plurality of the first intersections; and / or

[0009] The projections of the third sub-electrode and several of the second sub-electrodes on the functional layer have several second intersections, and the projections of several of the second resistive switching units on the functional layer cover several of the second intersections; and / or

[0010] Projections of the plurality of first resistive switching units and the plurality of second resistive switching units on the functional layer correspond one to one.

[0011] Optionally, in some embodiments of the present application, the materials of the first sub-electrode, the second sub-electrode and the third sub-electrode respectively independently include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the metal The material of the oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or

[0012] The materials of the first resistive switching unit and the second resistive switching unit include one or more of metal oxides, organic polymers, solid electrolytes, and ferroelectric materials, respectively; the metal oxide includes one or more of titanium oxide, tungsten oxide, nickel oxide, zirconium oxide, manganese oxide, vanadium oxide, and cobalt oxide; the organic polymer includes one or more of polyaniline and polythiophene; the solid electrolyte includes one or more of lithium ion solid electrolyte and sulfur oxide solid electrolyte; the ferroelectric material includes one or more of strontium titanate and barium titanate; and / or

[0013] The thickness of the first sub-electrode, the second sub-electrode and the third sub-electrode are independently 5 nm to 12 nm; and / or

[0014] The thickness of the first resistive switching unit and the second resistive switching unit are independently 3 nm to 8 nm.

[0015] Optionally, in some embodiments of the present application, the first sub-electrode is arranged along the length direction of the pixel unit; there are three second sub-electrodes, and the three second sub-electrodes are arranged in parallel along the width direction of the pixel unit, and the projections of the first sub-electrode and the three second sub-electrodes on the functional layer have three first intersections; there are three first resistive switching units, and the projection of each of the resistive switching units on the functional layer corresponds one-to-one to each of the first intersections.

[0016] Optionally, in some embodiments of the present application, the functional layer includes a light-emitting layer; the functional layer also includes one or more of a first carrier functional layer and a second carrier functional layer, the first carrier functional layer is arranged between the first electrode and the light-emitting layer, and the second carrier functional layer is arranged between the light-emitting layer and the second electrode; the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer, or the first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer.

[0017] Optionally, in some embodiments of the present application, the material of the first electrode includes one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or

[0018] The material of the light-emitting layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, Cd ZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSe S, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs , GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, G aInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZ One or more of nSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs+ ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - , I-; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2; and / or

[0019] The electronic functional layer includes one or more of an electron injection layer and an electron transport layer, and the materials of the electron injection layer and the electron transport layer include one or more of doped or undoped semiconductor particles, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, and hydroxyquinoline compounds, respectively; the semiconductor particles include one or more of zinc oxide, barium oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc selenide, indium phosphide, gallium phosphide, and barium titanate; the doped elements include one or more of indium, gallium, aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; and / or

[0020] The hole functional layer includes one or more of a hole injection layer and a hole transport layer, and the materials of the hole injection layer and the hole transport layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-tri ...tri(1,1'-biphenyl)-tri(1,1'-biphenyl)-4,4'-diamine, N,N'-tri(1,1'-biphenyl)-tri(1,1'-biphenyl)-4,4'-diamine, N,N'-tri(1,1'- Aniline, 4,4',4'-tri(carbazole-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methyl [oxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1 -yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped or undoped zinc oxide, barium oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc selenide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds. One or more thereof.

[0021] Accordingly, an embodiment of the present application further provides a method for preparing a pixel unit, comprising:

[0022] Providing a pixel unit preform, wherein the pixel unit preform comprises a first electrode and a functional layer which are sequentially stacked;

[0023] forming a first sub-electrode on the pixel unit preform along the length direction of the pixel unit preform;

[0024] Forming a plurality of first resistive switching units at intervals on the first sub-electrode;

[0025] Along the width direction of the pixel unit preform, a plurality of second sub-electrodes are correspondingly formed on a plurality of the first resistive switching units to obtain a pixel unit.

[0026] Optionally, in some embodiments of the present application, after forming the second sub-electrode, the method further includes:

[0027] Along the length direction of the pixel unit preform, a plurality of second resistive switching units are formed on a plurality of the second sub-electrode strips at intervals, and the projections of the second resistive switching units and the first resistive switching units on the functional layer correspond one to one;

[0028] At least one third sub-electrode is formed on a plurality of the second resistive switching units along the width direction of the pixel unit preform to obtain a pixel unit.

[0029] Optionally, in some embodiments of the present application, the materials of the first sub-electrode, the second sub-electrode and the third sub-electrode respectively independently include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the metal The material of the oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or

[0030] The materials of the first resistive switching unit and the second resistive switching unit include one or more of metal oxides, organic polymers, solid electrolytes, and ferroelectric materials, respectively; the metal oxide includes one or more of titanium oxide, tungsten oxide, nickel oxide, zirconium oxide, manganese oxide, vanadium oxide, and cobalt oxide; the organic polymer includes one or more of polyaniline and polythiophene; the solid electrolyte includes one or more of lithium ion solid electrolyte and sulfur oxide solid electrolyte; the ferroelectric material includes one or more of strontium titanate and barium titanate; and / or

[0031] The thickness of the first sub-electrode, the second sub-electrode and the third sub-electrode are independently 5 nm to 12 nm; and / or

[0032] The thickness of the first resistive switching unit and the second resistive switching unit are independently 3 nm to 8 nm.

[0033] Optionally, in some embodiments of the present application, the functional layer includes a light-emitting layer, and the functional layer also includes one or more of a first carrier functional layer and a second carrier functional layer, the first carrier functional layer is arranged between the first electrode and the light-emitting layer, and the second carrier functional layer is arranged on the surface of the light-emitting layer away from the first electrode; the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer, or the first carrier functional layer is an electron functional layer and the second carrier functional layer is a hole functional layer.

[0034] Correspondingly, an embodiment of the present application further provides a display panel, comprising the above-mentioned pixel unit, or comprising a pixel unit manufactured by the above-mentioned manufacturing method.

[0035] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned pixel unit, or the pixel unit manufactured by the above-mentioned manufacturing method.

[0036] The pixel unit described in the present application includes a plurality of first resistive switching units and a plurality of second sub-electrodes correspondingly arranged on the plurality of first resistive switching units, thereby dividing a single pixel unit into multiple ones, and achieving precise matching and compensation of currents in each area of ​​the pixel unit, thereby improving the display quality and luminous efficiency of the pixel unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0038] Figure 1 is a schematic diagram of the structure of a pixel unit provided in an embodiment of the present application;

[0039] Figure 2 is a schematic structural diagram of a second electrode provided in an embodiment of the present application;

[0040] Figure 3 yes Figure 2 A magnified view of middle;

[0041] Figure 4 is a structural schematic diagram of another second electrode provided in an embodiment of the present application;

[0042] Figure 5 yes Figure 4 Enlarged view of middle B;

[0043] Figure 6 It is a flow chart of the method for preparing a pixel unit provided in an embodiment of the present application.

[0044] Reference numerals:

[0045] The first electrode 10 ; the first carrier functional layer 20 ; the light emitting layer 30 ; the second carrier functional layer 40 ; the second electrode 50 ; the first sub-electrode 501 ; the first resistive switching unit 502 ; the second sub-electrode 503 ; the second resistive switching unit 504 ; and the third sub-electrode 505 . DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0047] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0048] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0049] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0050] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0051] A memristor is a nonlinear resistor with memory function. Its resistance value can be changed by controlling the change of current. If high resistance value is defined as "1" and low resistance value is defined as "0", this resistor can realize the function of storing data. Memristors are usually made of transition metal oxides (such as titanium dioxide, tungsten oxide, etc.) or organic polymers. Its structural size is usually at the nanometer level. The structure of a memristor is generally a metal-insulator-metal (MIM) structure. In memristive materials with excellent performance, there are usually two types of conductive and non-conductive regions. When power is applied, positive and negative charges will be rearranged, and the conductive region will change, thereby changing the overall resistance of the memristor. The role of a memristor in a circuit is similar to that of a variable resistor. Its basic characteristic is that the relationship between voltage and current depends on the accumulation of charge passing through it. In other words, the resistance value of a memristor is related to the charge (or magnetic flux) experienced in the device. The resistance state of a memristor can be controlled by an external voltage or current. When power is applied, the proportion of the conductive and non-conductive regions in the entire device can be changed by adjusting the magnitude and direction of the voltage or current. This change causes the overall resistance of the device to change, and the memristor can maintain this resistance change after power is removed.

[0052] Memristors have the characteristics of non-volatility, high density and low energy consumption. Applying them to the electrodes of pixel units can improve the optoelectronic performance of pixel units, which is mainly reflected in the following aspects:

[0053] (1) Pixel-level drive and control: Traditional pixel-unit display screens use active matrix or passive matrix drive schemes. In some scenarios, using memristors as components of pixel unit electrodes can achieve high-precision current control of a single pixel, thereby improving the display effect. By combining memristors with transistors, a non-volatile storage unit can be formed that can independently store and adjust current values ​​on each pixel. In this way, the display screen will be able to display images with higher precision and improve display quality.

[0054] (2) Dynamic adjustment of OLED operating parameters: Due to the non-volatility of the memristor, it can be used to store the operating status and parameters of the pixel unit. This means that the operating mode of the pixel unit can be dynamically adjusted as needed, such as changing the brightness, color saturation, and contrast. The memristor component combined with the pixel unit electrode can achieve fast, precise, and controllable adjustment of the display screen.

[0055] (3) Energy efficiency optimization of display devices: By utilizing the low energy consumption characteristics of memristors, energy efficiency optimization can be achieved in pixel unit electrodes. By combining memristors with pixel unit electrodes, the energy consumption of the display screen during operation can be reduced. Compared with traditional pixel unit driving schemes, this will help reduce the power consumption of display devices, extend their service life, and benefit energy conservation and environmental protection.

[0056] (4) Tunable transparent electrodes: In certain specific application scenarios, such as smart windows and tunable transparent display devices, memristors can be used to adjust the performance of transparent electrodes. By changing the resistance value of the memristor, the conductivity of the electrode can be indirectly adjusted, thereby dynamically changing optical properties such as transparency and refractive index.

[0057] (5) Compensation for non-uniformity in driving current: During the manufacturing process, the pixels of the pixel unit display may be inconsistent due to the non-uniformity and characteristic changes of the thin film transistor (TFT). Applying memristors to the pixel unit electrodes can help achieve current matching and compensation between pixels. When encountering different working states, the memristor can make real-time current adjustments based on its stored driving parameters, thereby alleviating consistency issues and improving display quality.

[0058] (6) Intelligent brightness adjustment: By applying memristors to pixel unit electrodes, the brightness of the display can be adjusted according to changes in ambient light to achieve adaptive brightness control. Memristors are non-volatile and can save the state of brightness adjustment in real time, which helps to maintain the best display effect and save energy in different environments.

[0059] (7) Pixel unit health management: Combining memristors with pixel unit electrodes can provide a health management system with storage and reading functions. Memristors can store key parameters such as device life, driving conditions, and working conditions, helping to evaluate the performance and health of pixel unit display devices. In addition, active maintenance strategies can be implemented, such as adjusting the clock cycle and dynamically adjusting the drive current.

[0060] (8) Adjustment of transparent pixel unit screen: By introducing memristors into pixel unit electrodes, the optical properties of transparent pixel unit screens can be dynamically adjusted. By changing the resistance of the memristor, the conductive properties of the transparent electrode can be indirectly adjusted, thereby adjusting the transparency of the screen in real time.

[0061] The technical solution of this application is as follows:

[0062] First, see Figures 1 to 3 An embodiment of the present application provides a pixel unit, comprising: a first electrode 10, a functional layer, and a second electrode 50 arranged in a stacked manner; wherein the second electrode 50 comprises a first sub-electrode 501 arranged on the functional layer, a plurality of first resistive switching units 502 arranged in sequence and at intervals on the first sub-electrode 501, and a plurality of second sub-electrodes 503 correspondingly arranged on the plurality of first resistive switching units 502.

[0063] It can be understood that each of the first sub-electrode 501 , the first resistive switching unit 502 and the second sub-electrode 503 forms a memristor structure.

[0064] The pixel unit described in the present application includes a plurality of first resistive switching units 502 between the first sub-electrode 501 and the second sub-electrode 503, and a single pixel unit is divided into multiple ones, so that accurate matching and compensation of currents in various regions of the pixel unit can be achieved, and the consistency of various regions of the pixel unit can be improved, thereby improving the display quality; the first resistive switching unit 502 can also store key parameters such as the life of the storage device, driving conditions, and working conditions, help evaluate the performance and health of the pixel unit, and implement active maintenance strategies to dynamically adjust the driving current in real time according to the status of the pixel unit, thereby improving the life and efficiency of the pixel unit; the first resistive switching unit 502 also has efficient conductivity, which is conducive to efficient carrier injection and transmission in the functional layer of the pixel unit, thereby improving the luminous efficiency of the pixel unit.

[0065] In some embodiments, the second electrode 50 is disposed on a light-emitting side of the functional layer 30 .

[0066] In some embodiments, projections of several second sub-electrodes 503 and the first sub-electrode 501 on the functional layer have several first intersections, and projections of several first resistive units 502 on the functional layer overlap with the several first intersections in a one-to-one correspondence.

[0067] Furthermore, the projections of the second sub-electrode 503 and the first sub-electrode 501 on the functional layer are arranged in a mesh-like overlapping manner.

[0068] It can be understood that there are at least two first intersections, and correspondingly, there are at least two first resistive switching units 502 .

[0069] In some embodiments, the material of the first electrode 10 includes one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO; the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Here, “ / ” represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0070] In some embodiments, the thickness of the first electrode 10 is 10 nm to 50 nm, for example, 12 nm to 48 nm, 15 nm to 45 nm, 20 nm to 40 nm, 25 nm to 35 nm, 30 nm to 32 nm, etc.

[0071] In some embodiments, the functional layer includes a light emitting layer 30 .

[0072] Furthermore, the material of the light-emitting layer 30 includes one or more of organic light-emitting materials and quantum dot light-emitting materials.

[0073] The organic light-emitting material includes one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy)(4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium]), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing BN covalent bonds, HLCT (hybridized localized charge transfer excited state) materials, and Exciplex (exciplex) light-emitting materials.

[0074] The quantum dot luminescent material includes one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0075] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots can be respectively selected from but not limited to one or more of the group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2.

[0076] As an example, the core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0077] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of the following, X is a halogen anion selected from Cl-, Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or

[0078] [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

[0079] In some embodiments, the thickness of the light emitting layer 30 is 10 nm to 30 nm, for example, 12 nm to 28 nm, 14 nm to 26 nm, 15 nm to 25 nm, 16 nm to 22 nm, 18 nm to 20 nm, etc.

[0080] In some embodiments, the materials of the first sub-electrode 501 and the second sub-electrode 503 include one or more of metal, carbon material and metal oxide respectively; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, and the metal oxide electrode The material of the electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. Wherein, " / " indicates a stacked structure, for example, AZO / Ag / AZO indicates a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0081] In some embodiments, the thickness of the first sub-electrode 501 is 5 nm to 12 nm, for example, 5.5 nm to 11.5 nm, 6 nm to 11 nm, 6.5 nm to 10.5 nm, 7 nm to 10 nm, 8 nm to 9 nm, etc.

[0082] In some embodiments, the thickness of the second sub-electrode 503 is 5 nm to 12 nm, for example, 5.5 nm to 11.5 nm, 6 nm to 11 nm, 6.5 nm to 10.5 nm, 7 nm to 10 nm, 8 nm to 9 nm, etc.

[0083] It should be noted that, in order to ensure the electrical performance of the first sub-electrode 501 and the second sub-electrode 503 , the thickness of the first sub-electrode 501 and the second sub-electrode 503 are kept consistent.

[0084] In some embodiments, the material of the first resistive switching unit includes one or more of metal oxides, organic polymers, solid electrolytes, and ferroelectric materials.

[0085] The metal oxide includes: one or more of titanium oxide, tungsten oxide, nickel oxide, zirconium oxide, manganese oxide, vanadium oxide, and cobalt oxide.

[0086] The organic polymer includes one or more of polyaniline and polythiophene.

[0087] The solid electrolyte includes one or more of a lithium ion solid electrolyte and a sulfur oxide solid electrolyte.

[0088] The ferroelectric material includes one or more of strontium titanate and barium titanate.

[0089] In some embodiments, the thickness of the first resistive switching unit 502 is 3 nm to 8 nm, for example, 3.5 nm to 7.5 nm, 4 nm to 7 nm, 4.5 nm to 6.5 nm, 5 nm to 6 nm, 6.2 nm to 6.8 nm, etc.

[0090] In some embodiments, the pixel unit is a red light pixel unit, a blue light pixel unit or a green light pixel unit.

[0091] In some embodiments, the length of the pixel unit is 90 μm to 110 μm, for example, 92 μm to 108 μm, 94 μm to 106 μm, 95 μm to 105 μm, 96 μm to 102 μm, 98 μm to 100 μm, etc.; the width is 20 μm to 40 μm, for example, 22 μm to 38 μm, 24 μm to 36 μm, 25 μm to 35 μm, 26 μm to 32 μm, 28 μm to 30 μm, etc. In at least one embodiment, the size of the pixel unit is 100 μm×30 μm.

[0092] In some embodiments, the first sub-electrode 501 is arranged along the length direction of the pixel unit; there are three second sub-electrodes 503, and the three second sub-electrodes 503 are arranged in parallel along the width direction of the pixel unit, and the projections of the first sub-electrode 501 and the three second sub-electrodes 503 on the functional layer have three first intersections; there are three first resistive units 502, and the projection of each resistive unit 502 on the functional layer overlaps with each of the first intersections one by one.

[0093] It can be understood that the length of the first resistive switching unit 502 is consistent with the width of the first sub-electrode 501, and the width of the first resistive switching unit 502 is consistent with the width of the second sub-electrode 503. In this way, the front end, middle end and rear end of the pixel unit can be matched and controlled more precisely. For example, in the prior art, when the thickness of the functional layer is uneven, the front end of the pixel unit is thicker than the middle end and the rear end, resulting in a lower current at the front end. The current difference between the front end and the middle end and the rear end reduces the light emission consistency of the pixel unit. However, when the first resistive switching unit 502 is set at the front end, the middle end and the rear end, the first resistive switching unit 502 at the front end can compensate the current of the front end to improve the light emission consistency of the pixel unit.

[0094] It should be noted that, no matter whether one first sub-electrode 501 or three second sub-electrodes 503 are set on the pixel unit, the first sub-electrode 501 and the second sub-electrode 503 completely cover the pixel unit. In this way, the thin film defects of the second electrode 50 can be reduced and the display consistency and integrity of the pixel unit can be improved.

[0095] In some embodiments, see Figure 4 and Figure 5 The second electrode 50 further includes a plurality of second resistive switching units 504 correspondingly disposed on the plurality of second sub-electrodes 503 , and at least one third sub-electrode 505 disposed across the plurality of second resistive switching units 504 .

[0096] In some embodiments, projections of several of the third sub-electrodes 505 and the second sub-electrode 503 on the functional layer have several second intersections, and projections of several of the second resistive switching units 504 on the functional layer cover several of the second intersections.

[0097] In some embodiments, projections of a plurality of the first resistive switching units 502 and a plurality of the second resistive switching units 504 on the functional layer overlap correspondingly.

[0098] The material, thickness and width of the third sub-electrode 505 may refer to the first sub-electrode 501 , the material of the second resistive unit 504 may refer to the first resistive unit 502 , and the thickness of the second resistive unit 504 may refer to the first resistive unit 502 , which will not be described in detail here.

[0099] It can be understood that by configuring the second electrode 50 to have a stacked structure, the brightness and accuracy of the pixel unit can be further improved, which is beneficial to the brightness control of the pixel unit.

[0100] Of course, in other embodiments, the pixel unit further includes a third resistive switching unit, a fourth sub-electrode, a fourth resistive switching unit, a fifth sub-electrode, ... an N-1th resistive switching unit, an Nth sub-electrode stacked on the third sub-electrode 505, where N is an integer ≥ 4. Among them, the odd-numbered sub-electrodes can refer to the first sub-electrode 501, the even-numbered sub-electrodes can refer to the second sub-electrode 503, and each resistive switching unit can refer to the first resistive switching unit 502.

[0101] In some embodiments, the functional layer further includes a first carrier functional layer 20, and the first carrier functional layer 20 is disposed between the first electrode 10 and the light emitting layer 30. The first carrier functional layer 20 is a hole functional layer or an electron functional layer.

[0102] In some embodiments, the functional layer further includes a second carrier functional layer 40, and the second carrier functional layer 40 is disposed between the light emitting layer 30 and the second electrode 50. The second carrier functional layer 40 is an electron functional layer or a hole functional layer.

[0103] It can be understood that when the first carrier functional layer 20 is a hole functional layer, the second carrier functional layer 40 is an electron functional layer, and when the second carrier functional layer 40 is a hole functional layer, the first carrier functional layer 20 is an electron functional layer.

[0104] In some embodiments, the thickness of the hole functional layer is 20 nm to 50 nm, for example, 22 nm to 48 nm, 25 nm to 45 nm, 28 nm to 42 nm, 30 nm to 40 nm, 32 nm to 38 nm, etc.

[0105] In some embodiments, the thickness of the electronic functional layer is 25 nm to 60 nm, for example, 28 nm to 58 nm, 30 nm to 55 nm, 32 nm to 50 nm, 35 nm to 45 nm, 38 nm to 40 nm, etc.

[0106] In some embodiments, the hole functional layer includes one or more of a hole injection layer and a hole transport layer, and the materials of the hole injection layer and the hole transport layer include but are not limited to 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-triamine. (N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazolyl-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene) -1-yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped or undoped zinc oxide, barium oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc selenide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, one or more thereof.

[0107] In some embodiments, the electronic functional layer includes one or more of an electron injection layer and an electron transport layer. The materials of the electron injection layer and the electron transport layer include one or more of doped or undoped semiconductor particles, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, and hydroxyquinoline compounds. The semiconductor particles include one or more of zinc oxide, barium oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc selenide, indium phosphide, gallium phosphide, and barium titanate, and the doped elements include one or more of indium, gallium, aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0108] Second, see Figure 6 The present application also provides a method for preparing a pixel unit, comprising:

[0109] S11: providing a pixel unit preform, wherein the pixel unit preform comprises a first electrode 10 and a functional layer stacked in sequence;

[0110] S12: forming a first sub-electrode 501 on the pixel unit preform along the length direction of the pixel unit preform;

[0111] S13: forming a plurality of first resistive switching units 502 on the first sub-electrode 501 at intervals;

[0112] S14: forming a plurality of second sub-electrodes 503 correspondingly on a plurality of the first resistive switching units 502 along the width direction of the pixel unit preform to obtain a pixel unit.

[0113] In the S11:

[0114] In some embodiments, the functional layer includes a light emitting layer 30 .

[0115] In some embodiments, the functional layer further includes a first carrier functional layer 20, and the first carrier functional layer 20 is disposed between the first electrode 10 and the light emitting layer 30. The first carrier functional layer 20 is a hole functional layer or an electron functional layer.

[0116] In some embodiments, the functional layer further includes a second carrier functional layer 40, and the second carrier functional layer 40 is disposed on a surface of the light emitting layer 30 away from the first electrode 10. The second carrier functional layer 40 is a hole functional layer or an electron functional layer.

[0117] The first electrode 10 , the light-emitting layer 30 , the hole functional layer, and the electron functional layer are as described above and will not be described in detail here.

[0118] In S12 to S14:

[0119] In some embodiments, the formation of the first sub-electrode 501, the first resistive switching unit 502 and the second sub-electrode 503 may adopt conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical coating and solution method, among which the physical coating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, doctor blade coating, printing, dip-pull method, immersion method, spray coating, roll coating, casting, slit coating and strip coating, etc.

[0120] In at least one embodiment, the method for forming the first sub-electrode 501 is a thermal evaporation coating method, and the thermal evaporation coating method is performed in an inert atmosphere at room temperature with a vacuum degree not higher than 3×10 -4 Pa, the evaporation rate is 1 angstrom / s, and the evaporation time is 50s to 120s.

[0121] In at least one embodiment, the method for forming the first resistive switching unit 502 is a thermal evaporation coating method, wherein the thermal evaporation coating method is performed in an inert atmosphere at room temperature, and the vacuum degree is not higher than 3×10 -4 Pa, the evaporation rate is 1 angstrom / s, and the evaporation time is 30s to 80s.

[0122] In some embodiments, after forming the second sub-electrode 503, the method further includes:

[0123] Along the length direction of the pixel unit preform, a plurality of second resistive switching units 504 are formed on a plurality of the second sub-electrodes 503 at intervals, and the projections of the second resistive switching units 504 and the first resistive switching units 502 on the functional layer overlap one by one;

[0124] At least one third sub-electrode 505 is formed on a plurality of the second resistive switching units 504 along the width direction of the pixel unit preform to obtain a pixel unit.

[0125] The first sub-electrode 501 , the first resistive switching unit 502 , the second sub-electrode 503 , the second resistive switching unit 504 , and the third sub-electrode 505 are described above and will not be described in detail herein.

[0126] It can be understood that after forming the second resistive switching unit 504 and the third sub-electrode 505, a third resistive switching unit, a fourth sub-electrode, a fourth resistive switching unit, a fifth sub-electrode, ... an N-1th resistive switching unit, an Nth sub-electrode can be formed on the third sub-electrode 505, where N is an integer ≥ 4. The odd-numbered sub-electrodes can refer to the first sub-electrode 501, the even-numbered sub-electrodes can refer to the second sub-electrode 503, and each resistive switching unit can refer to the first resistive switching unit 502.

[0127] In a third aspect, the present application further provides a display panel, comprising the above-mentioned pixel unit, or comprising a pixel unit manufactured by the above-mentioned manufacturing method.

[0128] In a fourth aspect, the present application also provides a display device, comprising the above-mentioned pixel unit.

[0129] The display device includes a plurality of red light pixel units, blue light pixel units and green light pixel units arranged in a tiled manner, wherein the distance between each adjacent pixel unit is 0.01 mm to 0.02 mm, for example, 0.011 mm to 0.019 mm, 0.012 mm to 0.018 mm, 0.013 mm to 0.017 mm, 0.014 mm to 0.016 mm, etc.

[0130] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0131] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0132] Example 1

[0133] This device embodiment provides a pixel unit, and the preparation method is as follows:

[0134] Providing an ITO glass, cleaning the ITO glass with a cleaning agent to remove stains on the surface, then ultrasonically cleaning the ITO glass with deionized water, isopropyl acetone, acetone and deionized water for 20 minutes respectively, and then drying with nitrogen to obtain an ITO anode with a thickness of 30 nm;

[0135] A TFB solution with a concentration of 8 mg / mL was placed on the ITO anode and spin-coated at a speed of 5000 rpm for 30 seconds, followed by annealing at a temperature of 150°C for 15 minutes to obtain a 30 nm hole functional layer;

[0136] The quantum dots with CdZnSeS as the core and ZnS as the shell were dissolved in n-octane to prepare a quantum dot solution with a concentration of 20 mg / mL. The quantum dot solution was placed on the hole functional layer and spin-coated at a speed of 2000 rpm for 30 seconds. -2 MPa environment for 15 min to obtain a 40nm luminescent layer;

[0137] A 30 mg / mL ZnO ethanol dispersion was placed on the light-emitting layer and spin-coated at a speed of 3000 rpm for 30 seconds. -2 MPa environment for 15 min to obtain a 30nm electronic functional layer;

[0138] On the electronic functional layer, along the length direction of the electronic functional layer, a first silver electrode strip is deposited by thermal evaporation. The width of the first silver electrode strip is consistent with the width of the electronic functional layer, and the vacuum degree is not higher than 3x10 -4 Pa, speed 1 Å / s, time 100 s, to obtain a first sub-electrode with a thickness of 10 nm;

[0139] Three TiO2 resistive switching units are deposited on the first silver electrode strip by thermal evaporation, with a vacuum degree not higher than 3x10 -4 Pa, the speed is 1 angstrom / second, the time is 50s, the length of each resistive switching unit is consistent with the width of the first sub-electrode, and the width is 1 / 3 of the width of the electronic functional layer, and the first resistive switching unit with a thickness of 5nm is obtained;

[0140] On the first resistive switching unit, three second silver electrodes are deposited along the width direction of the electronic functional layer by thermal evaporation. The width of each second silver electrode is 1 / 3 of the width of the electronic functional layer, and the vacuum degree is not higher than 3x10 -4 Pa, the speed is 1 angstrom / second, the time is 100s, and a second sub-electrode with a thickness of 10nm is obtained. The second sub-electrode and the first sub-electrode are a mesh-like overlapping structure;

[0141] Encapsulation to obtain a pixel unit.

[0142] Example 2

[0143] This embodiment is basically the same as the embodiment 1, except that after obtaining the second sub-electrode, the embodiment further includes: thermally evaporating a TiO2 resistive switching unit on each second silver electrode, with a vacuum degree of no more than 3x10 -4Pa, the speed is 1 angstrom / second, the time is 50s, the length of each resistive switching unit is consistent with the width of the first sub-electrode, and the width is 1 / 3 of the width of the electronic functional layer, and a second resistive switching unit with a thickness of 5nm is obtained; on the second resistive switching unit, along the length direction of the electronic functional layer, three third silver electrodes are deposited by thermal evaporation, and the width of each third silver electrode is 1 / 3 of the width of the electronic functional layer, and the vacuum degree is not higher than 3x10 -4 Pa, the speed is 1 angstrom / s, the time is 100 s, and the third sub-electrode with a thickness of 10 nm is obtained.

[0144] Example 3

[0145] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the TiO2 resistive switching unit is replaced by a polyaniline resistive switching unit.

[0146] Example 4

[0147] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the first silver electrode is replaced by a first indium tin oxide electrode.

[0148] Example 5

[0149] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the width of each first resistive switching unit is 1 / 4 of the width of the electronic functional layer, and there are four first resistive switching units.

[0150] Example 6

[0151] This embodiment is basically the same as Embodiment 1, except that the preparation order of the pixel unit in this embodiment is: evaporating a silver electrode to obtain a cathode; and then sequentially preparing an electronic functional layer, a light-emitting layer, a hole functional layer, a first sub-electrode, a first resistive switching unit, and a second sub-electrode on the cathode.

[0152] Example 7

[0153] This embodiment is substantially the same as Embodiment 1, except that the thickness of the resistive switching unit in this embodiment is 3 nm.

[0154] Example 8

[0155] This embodiment is substantially the same as Embodiment 1, except that the thickness of the resistive switching unit in this embodiment is 8 nm.

[0156] Comparative Example 1

[0157] This comparative example is basically the same as Example 1, except that in this comparative example, silver is directly evaporated on the electronic functional layer to form a cathode to obtain a pixel unit.

[0158] Comparative Example 2

[0159] This comparative example is basically the same as Example 1, except that in this comparative example, a continuous first silver electrode, a TiO2 resistive switching unit and a second silver electrode are sequentially vapor-deposited on the electronic functional layer, the first silver electrode, the TiO2 resistive switching unit and the second silver electrode are sequentially stacked without a mesh overlapping structure, and the TiO2 resistive switching unit contains only one.

[0160] The brightness, lifespan T95, T95@1k nit and current efficiency of the pixel units in Examples 1 to 8 and Comparative Examples 1 to 2 were tested, and the test results are shown in Table 1.

[0161] The brightness is measured by a photometer, and the current efficiency is the brightness divided by the injected current density. The test method for lifespan T95 and T95@1knit is: using a 128-channel lifespan test system customized by Guangzhou New Vision Company. The system architecture is a constant voltage and constant current source to drive QLED, test the change in voltage or current, the photodiode detector and test system test the change in brightness (photocurrent) of QLED, and the brightness meter test calibrates the brightness (photocurrent) of QLED, and obtains the time it takes for the initial brightness of the light-emitting diode to decay to 95%, and converts it to the aging time under 1k nit.

[0162] Table 1

[0163]

[0164]

[0165] From Table 1, we can see that:

[0166] It can be seen from Examples 1 to 2 and Comparative Examples 1 to 2 that adding a resistive switching unit to the electrode of the pixel unit can significantly improve the brightness, service life and current efficiency of the pixel unit; the performance of the pixel unit with two layers of resistive switching units is better than the pixel unit with only one layer of resistive switching units in Example 1; the first sub-electrode and the second sub-electrode are arranged to intersect, which improves the performance of the pixel unit more significantly;

[0167] It can be seen from Example 1, Examples 3 to 4 and Comparative Example 1 that replacing the material of the resistive switching unit or the sub-electrode has little effect on the performance of the pixel unit, and its brightness, luminous efficiency and service life are all maintained at a high level, which is significantly better than the performance of the pixel unit in Comparative Example 1;

[0168] It can be seen from Example 1, Example 5 and Comparative Example 1 that after increasing the number of resistors in the pixel unit, the brightness, service life and luminous efficiency of the pixel unit are slightly improved compared with Example 1;

[0169] It can be seen from Example 1, Examples 6 to 8 and Comparative Example 1 that applying the resistive switching unit to the anode has no significant effect on the pixel unit; within the thickness range of the resistive switching unit provided in the present application, changing the thickness of the resistive switching unit has little effect on the performance of the pixel unit, and the brightness, service life and current efficiency of the pixel units of Example 1 and Examples 6 to 8 are significantly better than those of the pixel unit of Comparative Example 1.

[0170] The pixel unit and its preparation method, display panel, and display device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A pixel unit, characterized in that: include: A first electrode, a functional layer, and a second electrode are stacked; wherein the second electrode includes a first sub-electrode arranged on the functional layer, a plurality of first resistive switching units sequentially and spaced apart on the first sub-electrode, and a plurality of second sub-electrodes correspondingly arranged on the plurality of first resistive switching units.

2. The pixel unit according to claim 1, characterized in that: The second electrode further includes a plurality of second resistive switching units correspondingly arranged on the plurality of second sub-electrodes, and at least one third sub-electrode arranged across the plurality of second resistive switching units.

3. The pixel unit according to claim 2, characterized in that: Projections of a plurality of the second sub-electrodes and the first sub-electrode on the functional layer have a plurality of first intersections, and projections of a plurality of the first resistive switching units on the functional layer correspond one-to-one to the plurality of the first intersections; and / or The projections of the third sub-electrode and the plurality of the second sub-electrodes on the functional layer have a plurality of second intersections, and the projections of the plurality of the second resistive switching units on the functional layer cover the plurality of the second intersections; and / or Projections of the plurality of first resistive switching units and the plurality of second resistive switching units on the functional layer correspond one to one.

4. The pixel unit according to claim 2, characterized in that: The materials of the first sub-electrode, the second sub-electrode and the third sub-electrode independently include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode Including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or The materials of the first resistive switching unit and the second resistive switching unit include one or more of metal oxides, organic polymers, solid electrolytes, and ferroelectric materials, respectively; the metal oxide includes one or more of titanium oxide, tungsten oxide, nickel oxide, zirconium oxide, manganese oxide, vanadium oxide, and cobalt oxide; the organic polymer includes one or more of polyaniline and polythiophene; the solid electrolyte includes one or more of lithium ion solid electrolyte and sulfur oxide solid electrolyte; the ferroelectric material includes one or more of strontium titanate and barium titanate; and / or The thickness of the first sub-electrode, the second sub-electrode and the third sub-electrode are independently 5 nm to 12 nm; and / or The thickness of the first resistive switching unit and the second resistive switching unit are independently 3 nm to 8 nm.

5. The pixel unit according to claim 3, characterized in that: The first sub-electrode is arranged along the length direction of the pixel unit; there are three second sub-electrodes, and the three second sub-electrodes are arranged in parallel along the width direction of the pixel unit, and the projections of the first sub-electrode and the three second sub-electrodes on the functional layer have three first intersections; there are three first resistive switching units, and the projection of each of the resistive switching units on the functional layer corresponds one-to-one to each of the first intersections.

6. The pixel unit according to claim 1, characterized in that: The functional layer includes a light-emitting layer; the functional layer also includes one or more of a first carrier functional layer and a second carrier functional layer, the first carrier functional layer is arranged between the first electrode and the light-emitting layer, and the second carrier functional layer is arranged between the light-emitting layer and the second electrode; the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer, or the first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer.

7. The pixel unit according to claim 6, characterized in that: The material of the first electrode includes one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or The material of the light-emitting layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, Exciplex luminescent materials, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, Cd ZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSe S, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs , GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, G aInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, CuInS2, CuInSe2, AgInS2, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZ One or more of nSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, AMX3 and BMX3, where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of; B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2; and / or The electronic functional layer includes one or more of an electron injection layer and an electron transport layer, and the materials of the electron injection layer and the electron transport layer include one or more of doped or undoped semiconductor particles, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, and hydroxyquinoline compounds, respectively; the semiconductor particles include one or more of zinc oxide, barium oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc selenide, indium phosphide, gallium phosphide, and barium titanate; the doped elements include one or more of indium, gallium, aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; and / or The hole functional layer includes one or more of a hole injection layer and a hole transport layer, and the materials of the hole injection layer and the hole transport layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-tri ...tri(1,1'-biphenyl)-tri(1,1'-biphenyl)-4,4'-diamine, N,N'-tri(1,1'-biphenyl)-tri(1,1'-biphenyl)-4,4'-diamine, N,N'-tri(1,1'- Aniline, 4,4',4'-tri(carbazole-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methyl [oxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1 -yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped or undoped zinc oxide, barium oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc selenide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds. One or more thereof.

8. A method for preparing a pixel unit, characterized in that: include: Providing a pixel unit preform, wherein the pixel unit preform comprises a first electrode and a functional layer which are sequentially stacked; forming a first sub-electrode on the pixel unit preform along the length direction of the pixel unit preform; Forming a plurality of first resistive switching units at intervals on the first sub-electrode; Along the width direction of the pixel unit preform, a plurality of second sub-electrodes are correspondingly formed on a plurality of the first resistive switching units to obtain a pixel unit.

9. The preparation method according to claim 8, characterized in that: After the second sub-electrode is formed, the method further comprises: Along the length direction of the pixel unit preform, a plurality of second resistive switching units are formed on a plurality of the second sub-electrode strips at intervals, and the projections of the second resistive switching units and the first resistive switching units on the functional layer correspond one to one; At least one third sub-electrode is formed on a plurality of the second resistive switching units along the width direction of the pixel unit preform to obtain a pixel unit.

10. The preparation method according to claim 9, characterized in that: The materials of the first sub-electrode, the second sub-electrode and the third sub-electrode independently include one or more of metal, carbon material and metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode Including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or The materials of the first resistive switching unit and the second resistive switching unit include one or more of metal oxides, organic polymers, solid electrolytes, and ferroelectric materials, respectively; the metal oxide includes one or more of titanium oxide, tungsten oxide, nickel oxide, zirconium oxide, manganese oxide, vanadium oxide, and cobalt oxide; the organic polymer includes one or more of polyaniline and polythiophene; the solid electrolyte includes one or more of lithium ion solid electrolyte and sulfur oxide solid electrolyte; the ferroelectric material includes one or more of strontium titanate and barium titanate; and / or The thickness of the first sub-electrode, the second sub-electrode and the third sub-electrode are independently 5 nm to 12 nm; and / or The thickness of the first resistive switching unit and the second resistive switching unit are independently 3 nm to 8 nm.

11. The preparation method according to claim 8, characterized in that: The functional layer includes a light-emitting layer, and the functional layer also includes one or more of a first carrier functional layer and a second carrier functional layer, the first carrier functional layer is arranged between the first electrode and the light-emitting layer, and the second carrier functional layer is arranged on the surface of the light-emitting layer away from the first electrode; the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer, or the first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer.

12. A display panel, characterized in that: The method comprises a pixel unit as claimed in any one of claims 1 to 8, or a pixel unit manufactured by the manufacturing method as claimed in any one of claims 9 to 12.

13. A display device, characterized in that: The method comprises a pixel unit as claimed in any one of claims 1 to 8, or a pixel unit manufactured by the manufacturing method as claimed in any one of claims 9 to 12.

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