Semiconductor device, manufacturing method, system, chip, and apparatus

Abstract

The embodiment of the invention provides a semiconductor device, a manufacturing method, a system, a chip and equipment. The semiconductor device includes: a modulator including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type; the memristor comprises a first conducting layer, a memristive function layer and a second conducting layer, and the memristive function layer is arranged between the first conducting layer and the second conducting layer; wherein the first conductive layer is electrically connected to the first semiconductor layer of the modulator, such that the modulator is electrically connected to the memristor; and the modulator is configured to receive a modulated electrical signal via the second conductive layer.

Description

Technical Field

[0001] The present application relates to the field of chip technology, and in particular to a semiconductor device, a manufacturing method, a system, a chip and an apparatus. Background Art

[0002] With the development of artificial intelligence and data volume, the demand for data computing power and data transmission has exploded. Photonic computing has attracted attention due to its powerful computing power and low-loss and high-speed data transmission.

[0003] In the field of artificial intelligence, photonic computing can better simulate the human brain neural network architecture for data processing and truly realize thinking like a human. A prominent method of neuromorphic computing is artificial neural network (ANN), which is a collection of artificial neurons that are interconnected in a specific way to process information in a way similar to the function of the brain. ANN has found uses in a variety of applications, including artificial intelligence, speech recognition, text recognition, natural language processing, and various forms of pattern recognition. ANN has an input layer, at least one hidden layer, and an output layer. Each layer has multiple artificial neurons, and the nodes are interconnected between the layers. Each artificial neuron in the hidden layer performs a weighted sum operation of the signal received from the artificial neuron of the previous layer to obtain a weighted sum, and performs a nonlinear transformation (called "activation") of the weighted sum to produce an output.

[0004] Light modulation is an important method for light processing, which can be used in many fields including photonic computing. The design of optoelectronic modulation related devices, especially the design and manufacture of related semiconductor devices, is very important. Summary of the invention

[0005] Embodiments of the present application provide a semiconductor device, a manufacturing method, a system, a chip, and an apparatus.

[0006] In a first aspect, the present application provides a semiconductor device, comprising:

[0007] A modulator comprising a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type;

[0008] A memristor, comprising a first conductive layer, a memristor functional layer and a second conductive layer, wherein the memristor functional layer is arranged between the first conductive layer and the second conductive layer;

[0009] wherein the first conductive layer is electrically connected to the first semiconductor layer of the modulator, so that the modulator is electrically connected to the memristor; and

[0010] The modulator is configured to receive a modulated electrical signal via the second conductive layer.

[0011] Optionally, the semiconductor device further includes: a substrate;

[0012] The modulator and the memristor are formed on the substrate.

[0013] Optionally, the first conductive layer is a first metal layer formed in a back-end process.

[0014] Optionally, the modulator is configured to receive a modulated electrical signal via the second conductive layer, including: the modulated electrical signal passes through the second conductive layer, the memristive functional layer, the first conductive layer, the first semiconductor layer, and the second semiconductor layer in sequence to modulate the modulator.

[0015] Optionally, the first conductive layer and the second conductive layer are configured to receive a data writing electrical signal to write data in the memristor.

[0016] Optionally, the first conductivity type is opposite to the second conductivity type.

[0017] Optionally, the modulator is a carrier injection modulator, a carrier accumulation modulator or a carrier depletion modulator.

[0018] Optionally, the modulator is a carrier accumulation type modulator, and the modulator further includes a dielectric layer, and the dielectric layer is arranged between the first semiconductor layer and the second semiconductor layer.

[0019] In a second aspect, the present application provides a semiconductor manufacturing method, comprising:

[0020] providing a substrate;

[0021] forming a modulator and a memristor on the substrate;

[0022] Wherein, the modulator includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; the memristor includes a first conductive layer, a memristor functional layer and a second conductive layer, wherein the memristor functional layer is arranged between the first conductive layer and the second conductive layer; the first conductive layer is electrically connected to the first semiconductor layer of the modulator, so that the modulator is electrically connected to the memristor; and the modulator is configured to receive a modulated electrical signal via the second conductive layer.

[0023] Optionally, forming a modulator and a memristor on the substrate comprises:

[0024] In the front-end process, the modulator is formed on the substrate;

[0025] In the back-end process, the memristor is formed on the substrate.

[0026] Optionally, in a back-end process, forming the memristor on the substrate includes:

[0027] In the back-end process, the first conductive layer, the memristor functional layer and the second conductive layer are formed.

[0028] In a third aspect, the present application provides a photonic computing system, including an optical encoding unit and a photonic computing unit, wherein the photonic computing unit includes any of the semiconductor devices described above.

[0029] Optionally, the modulator of the semiconductor device is configured to receive a modulated electrical signal via the second conductive layer.

[0030] In a fourth aspect, the present application provides a photonic integrated circuit chip, comprising any of the semiconductor devices described above.

[0031] In a fifth aspect, the present application provides an optical computing device, comprising the above-mentioned photonic integrated circuit chip.

[0032] In a sixth aspect, the present application provides an artificial intelligence computing device, comprising the above-mentioned photonic integrated circuit chip.

[0033] In the technical solution provided in the embodiment of the present application, the advantages of the present application are multifaceted. Through the integration of the modulator and the memristor, the physical state of the memristor can affect the modulation characteristics of the modulator, thereby changing the modulation of the light. This integration allows the second conductive layer to be shared by the memristor and the modulator. The state of the memristor can be changed according to an external electrical signal or according to the stored data, so that the semiconductor device can associate the state of the memristor or its stored data with the optical signal, which can reduce the signal conversion steps of the stored data, reduce the complex digital-to-analog converter, and reduce the complexity of the related conductive circuits. In addition, the semiconductor device can also be set to have different modulation states by changing the state of the memristor. In the application of optical computing, the electro-optical conversion process of the data to be calculated for optical computing can be reduced, the efficiency can be improved, etc., and the modulation device in the optical computing unit can have different modulation states by changing the state of the memristor. In addition, the semiconductor device is suitable for being implemented in the front-end process combined with the back-end process of the semiconductor process. A modulator is formed in the front-end process, and a memristor is formed in the back-end process. Forming the modulator in the front-end process is more conducive to the manufacture of the modulator by the semiconductor process, and manufacturing the memristor in the back-end process can avoid the situation that the process for manufacturing the modulator may not be suitable for manufacturing the memristor, which is conducive to reducing the difficulty of manufacturing the memristor. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0035] Figure 1 A schematic cross-sectional view of a semiconductor device provided in one embodiment of the present application;

[0036] Figure 2 A schematic diagram of a semiconductor manufacturing method according to an embodiment of the present application;

[0037] Figure 3 A photonic computing system is provided in accordance with an embodiment of the present application. DETAILED DESCRIPTION

[0038] In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below according to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0039] It should be noted that the descriptions such as “first” and “second” in this article are used to distinguish different messages, devices, units, etc., and do not represent the order of precedence, nor do they limit “first” and “second” to different types.

[0040] Figure 1 FIG. 1 is a schematic diagram of a semiconductor device 100 provided in an embodiment of the present application. Figure 1 As shown, the semiconductor device 100 comprises:

[0041] A modulator 11, comprising a first semiconductor layer 110 of a first conductivity type and a second semiconductor layer 111 of a second conductivity type;

[0042] The memristor 12 comprises a first conductive layer 120, a memristor functional layer 121 and a second conductive layer 122, wherein the memristor functional layer 121 is disposed between the first conductive layer 120 and the second conductive layer 122;

[0043] Wherein, the first conductive layer 120 is electrically connected to the first semiconductor layer 110 of the modulator 11, so that the modulator 11 is electrically connected to the memristor 12; and

[0044] The modulator 11 is configured to receive a modulated electrical signal via the second conductive layer 122 .

[0045] In practical applications, the modulator 11 can be a carrier injection modulator, a carrier accumulation modulator, or a carrier depletion modulator. Figure 1 As shown, the modulator 11 is a carrier depletion type modulator. Figure 1 In the paper, the light field is distributed near the PN junction and propagates in a direction perpendicular to the paper surface. The area where the light propagates (waveguide area) has a certain concentration of P and N type doping. When a reverse bias electrical signal is applied, the carrier depletion effect causes the carrier concentration to change, which in turn affects the refractive index, thereby modulating the light.

[0046] In some other examples, the modulator is a carrier accumulation type modulator; the modulator further includes a dielectric layer, and the dielectric layer is disposed between the first semiconductor layer and the second semiconductor layer.

[0047] Optionally, the first conductivity type is opposite to the second conductivity type, that is, the first conductivity type is one of P type and N type, and the second conductivity type is the other of P type and N type. In one specific example, the first conductivity type is P type, and the second conductivity type is N type. In another specific example, the first conductivity type is N type, and the second conductivity type is P type.

[0048] In a specific structure, the first semiconductor layer 110 may include: a first region 110a, a second region 110b and a third region 110c doped with a first dopant. The first dopant has a first concentration in the first region 110a, a second concentration in the second region 110b, and a third concentration in the third region 110c; the first concentration is less than the second concentration, and the second concentration is less than the third concentration. The first conductive layer 120 is electrically connected to the third region 110c of the first semiconductor layer 110 of the modulator 11. The greater the concentration of the first dopant in the third region, the smaller the contact resistance between the first conductive layer 120 and the third region 110c. In order to further reduce the contact resistance, a first nickel silicide (NiSi) sub-region c1 may also be formed in the third region, and the first conductive layer 120 is specifically electrically connected to the nickel silicide (NiSi) sub-region. In some embodiments, nickel silicide may also be replaced with other metal silicide materials to reduce the contact resistance.

[0049] In addition, the second semiconductor layer 111 may include: a fourth region 111a, a fifth region 111b and a sixth region 111c doped with a second dopant. The second dopant has a fourth concentration in the fourth region 111a, the second dopant has a fifth concentration in the fifth region 111b, and the second dopant has a sixth concentration in the sixth region 111c; the fourth concentration is less than the fifth concentration, and the fifth concentration is less than the sixth concentration. In practical applications, the semiconductor device 100 may also include: a third conductive layer 13; the third conductive layer 13 is electrically connected to the sixth region 111c. The greater the concentration of the second dopant in the sixth region, the smaller the contact resistance between the third conductive layer 13 and the sixth region 111c. In order to further reduce the contact resistance, a second nickel silicide sub-region c2 may also be formed in the sixth region, and the third conductive layer 13 is specifically electrically connected to the second nickel silicide sub-region c2. In some embodiments, nickel silicide may also be replaced with other metal silicide materials to reduce contact resistance.

[0050] Exemplarily, the second semiconductor layer 111 of the modulator 11 and the second conductive layer 122 of the memristor 12 can be used as two ends for receiving the modulated electrical signal. That is, the two ends of the modulated electrical signal are respectively applied to the second semiconductor layer 111 of the modulator 11 and the second conductive layer 122 of the memristor 12. In this way, the modulated electrical signal at one end is applied to the first semiconductor layer 110 via the second conductive layer 122, the memristor functional layer 121, and the first conductive layer 120, and the modulated electrical signal at the other end is input by the second semiconductor layer 111 to modulate the modulator 11. Exemplarily, the modulated electrical signal applied to the second semiconductor layer 111 of the modulator 11 and the second conductive layer 122 of the memristor 12 is a voltage signal, that is, the actual voltage at the two ends of the modulator 11 (the voltage applied between 110c and 111c) is related to the state (resistance value) of the memristor, and the resistance value of the memristor is determined by the data stored therein. When the resistance value of the memristor is a high resistance value, the actual voltage across the modulator 11 is a low level; when the resistance value of the memristor is a low resistance value, the actual voltage across the modulator 11 is a high level.

[0051] A memristor is a device with a memory function, for example, its resistance value can be changed by controlling the change of an electrical signal. Exemplarily, a memristor can have two storage states. If the high resistance value of the memristor is defined as "1" and the low resistance value of the memristor is defined as "0", then the memristor can realize the function of storing data. In one example, the first conductive layer 120 and the second conductive layer 122 of the memristor 12 are configured to receive a data write electrical signal to write data in the memristor 12. The first conductive layer 120 and the second conductive layer 122 of the memristor 12 are configured to receive a data write electrical signal to change the resistance value of the memristor, thereby realizing the writing of data.

[0052] In practical applications, the semiconductor device 100 may further include: a fourth conductive layer 14 and a fifth conductive layer 15. The fourth conductive layer 14 is electrically connected to the first conductive layer 120 of the memristor 12, the fifth conductive layer 15 is electrically connected to the second conductive layer 122 of the memristor 12, and the fourth conductive layer 14 and the fifth conductive layer 15 are configured to receive a data write electrical signal to write data in the memristor 12. That is, the two ends of the data write electrical signal are applied to the fourth conductive layer 14 and the fifth conductive layer 15, respectively.

[0053] In addition, the third conductive layer 13 and the fifth conductive layer 15 are configured to receive the modulated electrical signal. That is, the two ends of the modulated electrical signal are applied to the third conductive layer 13 and the fifth conductive layer 15 respectively.

[0054] Therefore, by setting a suitable conductive layer, it is used to receive data writing electrical signals or modulating electrical signals. In this example, the fifth conductive layer 15 can be used to receive both data writing electrical signals and modulating electrical signals, thereby optimizing the arrangement of the material layers.

[0055] like Figure 1 As shown, the semiconductor device 100 may further include: a substrate 16; the modulator 11 and the memristor 12 are formed on the substrate 16. Specifically, the modulator 11 and the memristor 12 are formed on the substrate 16 by a semiconductor process. The substrate may be a semiconductor substrate, such as a silicon substrate. The specific semiconductor process flow will be described in detail in the following embodiments.

[0056] Generally, semiconductor processes can be divided into front end of line (FEOL) or back end of line (BEOL). In one example, the first conductive layer 120 is a first metal layer formed in the back end process. The first metal layer can be any metal layer formed in the back end process. In another example, the first conductive layer 120 can be a conductive layer deposited on the first metal layer formed in the back end process. Among them, the metal material of the conductive layer and the metal material of the first metal layer can be different. In practical applications, the metal material of the first metal layer is copper (Cu). When copper cannot meet the conductive requirements of the memristor for the conductive layer, a layer of metal material that meets the conductive requirements of the memristor for the conductive layer can be deposited on the first metal layer formed in the back end process, such as gold (Au), to form the first conductive layer 120 of the memristor 12.

[0057] In the technical solution provided in the embodiment of the present application, the advantages of the present application are multifaceted. Through the integration of the modulator and the memristor, the physical state of the memristor can affect the modulation characteristics of the modulator, thereby changing the modulation of the light. This integration allows the second conductive layer to be shared by the memristor and the modulator. The state of the memristor can be changed according to an external electrical signal or according to the stored data, so that the semiconductor device can associate the state of the memristor or its stored data with the optical signal, which can reduce the conversion steps of the signal storing the data, can reduce the complex digital-to-analog converter, and reduce the complexity of the related conductive circuits. In addition, the semiconductor device can also be set to have different modulation states by changing the state of the memristor. In the application of optical computing, the electro-optical conversion process of the data to be calculated for optical computing can be reduced, the efficiency can be improved, etc., and the modulation device in the optical computing unit can have different modulation states by changing the state of the memristor.

[0058] Figure 2 FIG. 1 is a flow chart of a semiconductor manufacturing method provided by an embodiment of the present application. Figure 2 As shown, the method comprises:

[0059] 201. Provide a substrate.

[0060] 202. Form a modulator and a memristor on the substrate.

[0061] Wherein, the modulator includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; the memristor includes a first conductive layer, a memristor functional layer and a second conductive layer, wherein the memristor functional layer is arranged between the first conductive layer and the second conductive layer; the first conductive layer is electrically connected to the first semiconductor layer of the modulator, so that the modulator is electrically connected to the memristor; and the modulator is configured to receive a modulated electrical signal via the second conductive layer.

[0062] In the above 201, the substrate may be a semiconductor substrate, such as a silicon substrate. Exemplarily, the substrate may be bottom silicon in a SOI structure.

[0063] In the above 202, before forming the modulator and the memristor on the substrate, an oxide layer may be formed on the substrate, and then the modulator and the memristor are formed on the oxide layer.

[0064] The specific structure of the semiconductor device finally obtained can refer to the corresponding contents in the above embodiments, which will not be repeated here.

[0065] In one example, the step of “forming a modulator and a memristor on the substrate” in 202 above can be implemented by the following steps:

[0066] 2021. In the front-end process, the modulator is formed on the substrate.

[0067] 2022. In the back-end process, the memristor is formed on the substrate.

[0068] The modulator is formed in the front-end process, and the memristor is formed in the back-end process. Forming the modulator in the front-end process is more conducive to the manufacture of the modulator by the semiconductor process, and manufacturing the memristor in the back-end process can reduce the situation that the process for manufacturing the modulator may not be suitable for manufacturing the memristor, which is conducive to reducing the difficulty of memristor manufacturing. In addition, this can also be compatible with the existing semiconductor process flow.

[0069] In one feasible solution, in the above 2022, "in the back-end process, forming the memristor on the substrate" can be implemented by the following steps: in the back-end process, forming the first conductive layer, the memristor functional layer and the second conductive layer on the substrate.

[0070] In one example, in the back-end process, a first metal layer is formed on the substrate to serve as the first conductive layer; the memristor functional layer and the second conductive layer are sequentially prepared on the first metal layer to form the memristor.

[0071] The first metal layer may also be referred to as a metal interconnection layer. Specifically, in the back-end process, a first initial metal layer is deposited on the substrate; then, according to the metal interconnection requirements, the first initial metal layer is etched to obtain a first metal layer formed with metal interconnection wires.

[0072] A first intermetallic dielectric layer (IMD) may be deposited on the first metal layer; a preset pattern may be defined in the first intermetallic dielectric layer by a patterning process; a memristor functional material and a conductive material may be deposited on the first intermetallic dielectric layer in sequence to form the memristor functional layer and the second conductive layer in the preset pattern. The conductive material is specifically a metal material.

[0073] In another example, in the back-end process, a first metal layer is formed on the substrate; a first metal interlayer dielectric layer is deposited on the first metal layer; a memristor pattern is defined in the first metal interlayer dielectric layer using a graphic process; a conductive material, a memristor functional material, and a conductive material are sequentially deposited on the first metal interlayer dielectric layer to form the first conductive layer, the memristor functional layer, and the second conductive layer in the memristor pattern.

[0074] The above-mentioned patterning process may specifically include: a photolithography process.

[0075] In practical applications, in order to complete the integration of the memristor in the back-end metal wire, a second metal interlayer dielectric layer can be deposited after the memristor is formed; the required through hole is prepared in the second metal interlayer dielectric layer through a photolithography process; after the through hole is prepared, a second metal layer is formed on the second metal interlayer dielectric layer through deposition. Specifically, a second initial metal layer can be formed on the first metal interlayer dielectric layer through deposition; according to the metal interconnection requirements, the second initial metal layer is etched to obtain a second metal layer formed with metal interconnection wires.

[0076] In a specific example, if Figure 1 As shown, the third conductive layer 13 , the fourth conductive layer 14 and the fifth conductive layer 15 are all formed in the second metal layer, that is, the second metal layer includes: the third conductive layer 13 , the fourth conductive layer 14 and the fifth conductive layer 15 .

[0077] like Figure 1 As shown, the memristor 12 is a MIM (Metal-Insulator-Metal) structure formed between metal layers in the back-end process.

[0078] The embodiment of the present application also provides a photonic integrated circuit chip. The photonic integrated circuit chip may include the semiconductor devices involved in the above embodiments. Exemplarily, the photonic integrated circuit chip may be a photonic computing chip, and exemplary, the photonic computing chip is a photonic computing chip based on a neural network. Exemplarily, the photonic integrated circuit chip may include the above semiconductor device 100.

[0079] The embodiment of the present application further provides an optical computing device, which may include the photonic integrated circuit chip involved in the above embodiment.

[0080] The embodiment of the present application also provides an artificial intelligence computing device. The artificial intelligence computing device may include the photonic integrated circuit chip involved in the above embodiment.

[0081] Figure 3 A photonic computing system 300 is shown, which includes a part for performing computing in the photonic domain, specifically including an optical encoding unit 310 and a photonic computing unit 330 .

[0082] The initial optical signal may be encoded by the optical encoding unit 310, for example, the initial optical signal may be encoded according to the first data to become a first optical signal representing the first data, thereby generating the first optical signal, wherein the first data may come from the memory. The first data may be represented by a first electrical signal, and the optical encoding unit 310 may include a modulator to modulate the initial optical signal by the first electrical signal to obtain the first optical signal representing the first data.

[0083] The photon calculation unit 330 may include a plurality of multiplication modules (also referred to as weight modules). A multiplication module may be used to receive an electrical signal, i.e., a multiplication calculation control electrical signal, and receive an optical signal representing data (e.g., the aforementioned first optical signal) to perform a multiplication calculation. For example, the first optical signal may represent a multiplier a1, and the multiplication calculation control electrical signal may represent another multiplier b1. For example, the weight module may include the semiconductor device 100 in an embodiment of the present invention (e.g., see Figure 1 ), the semiconductor device 100 itself is a device with a modulation function, that is, the semiconductor device 100 can also be regarded as a modulator. The memristor 12 in the semiconductor device 100 can store relevant data to be calculated, or the memristor 100 can be set to a specific state so that it does not need to change the structure of the semiconductor device 100 to have different modulation characteristics.

[0084] In some embodiments, the multiplication module may include an MZI modulator, and the MZI modulator includes two arms, at least one of which may include the semiconductor device 100 described above.

[0085] In some embodiments, a photonic integrated circuit can be used to implement a photonic computing unit and an optical encoding unit. The photonic integrated circuit can be manufactured using a semiconductor process and manufactured in the form of a photonic integrated circuit chip. The photonic integrated circuit chip may include photonic devices such as an optical coupling structure, a waveguide, a photoelectric conversion unit, an electro-optical conversion unit, and a light source. The number of various photonic devices can be configured as needed, which can be one or more. Exemplarily, the electro-optical conversion unit may include a modulator to convert an electrical signal into an optical signal. Exemplarily, the optical coupling structure can be used for optical coupling with a laser or an optical fiber to input an optical signal to the photonic integrated circuit chip, or output an optical signal from the photonic integrated circuit chip, for example, using an optical fiber to input and output an optical signal; the optical coupling structure may include a grating coupler, an end face coupler, and the like. The waveguide can be used to propagate an optical signal and serve as a channel for information propagation. Exemplarily, the photoelectric conversion unit may include a photodetector for converting an optical signal into an electrical signal, and the photodetector may include, for example, a photodiode.

[0086] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A semiconductor device, characterized in that: include: A modulator comprising a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; A memristor, comprising a first conductive layer, a memristor functional layer and a second conductive layer, wherein the memristor functional layer is arranged between the first conductive layer and the second conductive layer; wherein the first conductive layer is electrically connected to the first semiconductor layer of the modulator, so that the modulator is electrically connected to the memristor; and The modulator is configured to receive a modulated electrical signal via the second conductive layer.

2. The semiconductor device according to claim 1, wherein: Also includes: substrate; The modulator and the memristor are formed on the substrate.

3. The semiconductor device according to claim 1, wherein: The first conductive layer is a first metal layer formed in a back-end process.

4. The semiconductor device according to claim 3, characterized in that The modulator is configured to receive a modulated electrical signal via the second conductive layer, including: the modulated electrical signal passes through the second conductive layer, the memristor functional layer, the first conductive layer, the first semiconductor layer, and the second semiconductor layer in sequence to modulate the modulator.

5. The semiconductor device according to any one of claims 1 to 4, characterized in that The first conductive layer and the second conductive layer are configured to receive a data writing electrical signal to write data in the memristor.

6. The semiconductor device according to any one of claims 1 to 4, characterized in that The first conductivity type is opposite to the second conductivity type.

7. The semiconductor device according to any one of claims 1 to 4, characterized in that The modulator is a carrier injection modulator, a carrier accumulation modulator or a carrier depletion modulator.

8. The semiconductor device according to any one of claims 1 to 4, characterized in that The modulator is a carrier accumulation type modulator, and the modulator further includes a dielectric layer, and the dielectric layer is arranged between the first semiconductor layer and the second semiconductor layer.

9. A semiconductor manufacturing method, characterized in that: include: providing a substrate; forming a modulator and a memristor on the substrate; Wherein, the modulator includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; the memristor includes a first conductive layer, a memristor functional layer and a second conductive layer, wherein the memristor functional layer is arranged between the first conductive layer and the second conductive layer; the first conductive layer is electrically connected to the first semiconductor layer of the modulator, so that the modulator is electrically connected to the memristor; and the modulator is configured to receive a modulated electrical signal via the second conductive layer.

10. The method according to claim 9, characterized in that A modulator and a memristor are formed on the substrate, comprising: In the front-end process, the modulator is formed on the substrate; In the back-end process, the memristor is formed on the substrate.

11. The method according to claim 10, characterized in that In the back-end process, the memristor is formed on the substrate, including: In the back-end process, the first conductive layer, the memristor functional layer and the second conductive layer are formed.

12. A photonic computing system, characterized in that: It comprises an optical encoding unit and a photon computing unit, wherein the photon computing unit comprises the semiconductor device according to any one of claims 1 to 8.

13. A photonic integrated circuit chip, characterized in that: A semiconductor device comprising any one of claims 1 to 8.

14. An optical computing device, characterized in that It comprises the photonic integrated circuit chip as claimed in claim 13.

15. An artificial intelligence computing device, characterized in that: Includes the photonic integrated circuit chip as claimed in claim 13.

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