Temporary fixing film, temporary fixing laminate, method for manufacturing semiconductor device, and temporary fixing composition

Abstract

The invention discloses a temporary fixing film for temporarily fixing a semiconductor component and a supporting component. The temporary fixing film contains an ultraviolet absorber having a hydroxyl group, a thermosetting resin having a functional group capable of reacting with the hydroxyl group, and a thermoplastic resin.

Description

Technical Field

[0001] The present invention relates to a temporary fixing film, a temporary fixing laminate, a method for producing a semiconductor device, and a temporary fixing composition. Background Art

[0002] In the manufacture of semiconductor elements, there is a case where a semiconductor component having a semiconductor substrate is processed after an integrated circuit is mounted on a semiconductor substrate such as a semiconductor wafer or a semiconductor chip. In the semiconductor component, for example, back grinding, singulation by dicing, and other processing are performed. The semiconductor component is usually processed while being temporarily fixed to a supporting component, and then the semiconductor component is separated from the supporting component. For example, Patent Document 1 discloses a method for separating a semiconductor component from a supporting component by irradiating a temporarily fixed material layer with ultraviolet light (ultraviolet laser).

[0003] Previous technical literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-033814 Summary of the invention

[0006] Technical issues to be solved by the invention

[0007] A main object of the present invention is to provide a temporary fixing film capable of forming a temporary fixing material layer capable of separating a semiconductor component and a supporting component by irradiation with light including ultraviolet light.

[0008] Means for solving technical problems

[0009] The present invention provides a temporary fixing film as described in [1] to [4], a temporary fixing laminate as described in [5] to [8], a method for manufacturing a semiconductor device as described in [9], and a temporary fixing composition as described in

[10] to

[12] .

[0010] [1] A temporary fixing film for temporarily fixing a semiconductor component and a supporting member, the temporary fixing film comprising an ultraviolet absorber having a hydroxyl group, a thermosetting resin having a functional group capable of reacting with the hydroxyl group, and a thermoplastic resin.

[0011] [2] The temporary fixing film according to [1], wherein the thermosetting resin is an epoxy resin.

[0012] [3] The temporary fixing film according to [1] or [2], wherein the thermoplastic resin is a hydrocarbon resin.

[0013] [4] The temporary fixing film according to any one of [1] to [3], wherein the transmittance at at least one of a wavelength of 308 nm and a wavelength of 355 nm is 15% or less.

[0014] [5] A temporary fixing laminate comprising a supporting member and a temporary fixing material layer provided on the supporting member and formed of the temporary fixing film according to [1].

[0015] [6] The temporary fixing laminate according to [5], further comprising a curable resin layer provided on the temporary fixing material layer.

[0016] [7] A temporary fixing laminate comprising, in this order, a supporting member, a first curable resin layer, and a temporary fixing material layer formed of the temporary fixing film according to [1].

[0017] [8] The temporary fixing laminate according to [7], further comprising a second curable resin layer provided on the temporary fixing material layer.

[0018] [9] A method for manufacturing a semiconductor device, comprising: a step of preparing a temporary fixing stack as described in any one of [5] to [8]; a step of temporarily fixing a semiconductor component to the supporting component via the temporary fixing material layer; a step of processing the semiconductor component temporarily fixed to the supporting component; and a step of irradiating the temporary fixing material layer of the temporary fixing stack with light containing ultraviolet light from the supporting component side to separate the semiconductor component from the supporting component.

[0019]

[10] A temporary fixing composition for temporarily fixing a semiconductor component and a supporting member, the temporary fixing composition comprising an ultraviolet absorber having a hydroxyl group, a thermosetting resin having a functional group capable of reacting with the hydroxyl group, and a thermoplastic resin.

[0020]

[11] The temporary fixing composition according to

[10] , wherein the thermosetting resin is an epoxy resin.

[0021]

[12] The temporary fixing composition according to

[10] or

[11] , wherein the thermoplastic resin is a hydrocarbon resin.

[0022] According to the above-mentioned temporary fixing film, the semiconductor component and the supporting component can be separated by irradiating light containing ultraviolet light, and it is suitable for the formation of a temporary fixing material layer. The reason why the semiconductor component and the supporting component can be separated by irradiating light containing ultraviolet light by using this temporary fixing film is not clear, but the inventors, for example, speculate as follows. It is speculated that first, by treating the temporary fixing film with heating, etc., the ultraviolet absorber having a hydroxyl group and the thermosetting resin having a functional group that can react with the hydroxyl group react, and a cured product containing a high molecular weight component is formed while absorbing the ultraviolet absorber. Then, by irradiating light containing ultraviolet light, the ultraviolet absorber absorbs the light energy, for example, by cutting the molecular chain of the high molecular weight component caused by thermal energy, the high molecular weight component is reduced in molecular weight (melting of the cured product), and the semiconductor component and the supporting component can be separated.

[0023] Effects of the Invention

[0024] According to the present invention, there is provided a temporary fixing film that can form a temporary fixing material layer capable of separating a semiconductor component and a supporting component by irradiating light including ultraviolet light. Also, according to the present invention, there is provided a temporary fixing laminate and a method for manufacturing a semiconductor device using such a temporary fixing film. Furthermore, according to the present invention, there is provided a useful temporary fixing composition for forming a temporary fixing film. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic cross-sectional view showing one embodiment of the temporary fixing film.

[0026] Figure 2 middle, Figure 2 (a) Figure 2 (b) and Figure 2 (c) is a schematic cross-sectional view showing one embodiment of the temporary fixing laminate.

[0027] Figure 3 middle, Figure 3 (a) and Figure 3 (b) is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device.

[0028] Figure 4 middle, Figure 4 (a) Figure 4 (b) and Figure 4 (c) is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device.

[0029] Figure 5 middle, Figure 5 (a) and Figure 5 (b) is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. DETAILED DESCRIPTION

[0030] Hereinafter, the embodiments of the present invention will be described with appropriate reference to the accompanying drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, except for the cases specifically indicated, the constituent elements (including steps, etc.) are not essential. The sizes of the constituent elements in each figure are conceptual sizes, and the relative relationship between the sizes of the constituent elements is not limited to the relationship shown in each figure.

[0031] The same is true for the numerical values ​​and their ranges in the present invention, and the present invention is not limited thereto. In this specification, the numerical range represented by "~" represents the range in which the numerical values ​​before and after "~" are included as the minimum and maximum values, respectively. In the numerical ranges recorded in stages in this specification, the upper limit or lower limit recorded in a numerical range may also be replaced by the upper limit or lower limit of other numerical ranges recorded in stages. Furthermore, in the numerical ranges recorded in this specification, the upper limit or lower limit of the numerical range may be replaced by the values ​​shown in the embodiments.

[0032] In this specification, the term "layer" includes not only a structure of a shape formed on the entire surface but also a structure of a shape formed on a part when viewed from a top view. Furthermore, in this specification, the term "process" is not limited to an independent process, but is also included in this term as long as the desired effect of the process is achieved even if it cannot be clearly distinguished from other processes.

[0033] In the present specification, (meth)acrylate refers to acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl, (meth)acrylic copolymer, etc.

[0034] In this specification, the materials exemplified below may be used alone or in combination of two or more within the range corresponding to the conditions unless otherwise specified. When the content of each component has multiple substances corresponding to each component, it refers to the total amount of the multiple substances unless otherwise specified.

[0035] [Temporary fixing film]

[0036] Figure 1 It is a schematic cross-sectional view showing one embodiment of the temporary fixing film. Figure 1The temporary fixing film 10 shown is used to temporarily fix a semiconductor component and a supporting component. More specifically, in the manufacture of a semiconductor device, the temporary fixing film 10 is used to form a layer (temporary fixing material layer) for temporarily fixing the semiconductor component to the supporting component during the processing of the semiconductor component. The temporary fixing film 10 contains an ultraviolet absorber having a hydroxyl group (hereinafter, sometimes referred to as "(A) component"), a thermosetting resin having a functional group that can react with a hydroxyl group (hereinafter, sometimes referred to as "(B) component"), and a thermoplastic resin (hereinafter, sometimes referred to as "(C) component".).

[0037] (A) Component: UV absorber having a hydroxyl group

[0038] The (A) component may be a component that absorbs light including ultraviolet light (ultraviolet light). The (A) component may be a component that absorbs light including a wavelength of 200 to 400 nm (near ultraviolet light). The (A) component has a hydroxyl group, and therefore tends to be less likely to ooze out of the temporary fixing film due to interaction with the (B) component. Furthermore, it is speculated that by treating the temporary fixing film with heating or the like, the (A) component and the (B) component react, and a cured product including a high molecular weight component is formed while absorbing the (A) component. Therefore, it can be expected that the dispersibility of the ultraviolet absorber component in the temporary fixing film can be improved by using the (A) component.

[0039] Examples of the ultraviolet absorber having a hydroxyl group include triazine-based ultraviolet absorbers having a triazine skeleton, such as 2-(4,6-diphenyl-1,3,5-triazine-2-yl)-5-[2-(2-ethylhexanoyloxy)ethoxy]phenol, 2,4,6-tris(2-hydroxy-4-hexyloxy-3-methylphenyl)-1,3,5-triazine, 2,4,6-tris(4-butoxy-2-hydroxyphenyl)-1,3,5-triazine, and 2,4-bis(2,4-dimethylphenyl)-6-(2-hydroxy-4-n-octyloxyphenyl)-1,3,5-triazine; and 2-(2H-benzotriazol-2-yl)-4,6-diphenyl-6-(2-hydroxy-4-n-octyloxyphenyl)-1,3,5-triazine. Benzotriazole-based ultraviolet absorbers having a benzotriazole skeleton, such as (1-methyl-1-phenylethyl)phenol, 2-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-(2H-benzotriazol-2-yl)-p-cresol, and 2-(5-chloro-2H-benzotriazol-2-yl)-6-tert-butyl-4-methylphenol; benzophenone-based ultraviolet absorbers having a benzophenone skeleton, such as [2-hydroxy-4-(octyloxy)phenyl](phenyl)methanone, etc. Among these, the component (A) may be a triazine-based ultraviolet absorber or a benzotriazole-based ultraviolet absorber, or a triazine-based ultraviolet absorber. The triazine-based ultraviolet absorber may be, for example, 2,4,6-tris(2-hydroxy-4-hexyloxy-3-methylphenyl)-1,3,5-triazine.

[0040] The component (A) is not particularly limited, but is preferably added to the temporary fixing film so that the transmittance at at least one of the wavelengths of 308 nm and 355 nm is 15% or less. The content of the component (A) may be 0.5 to 40 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C). If the content of the component (A) is 0.5 parts by mass or more relative to 100 parts by mass of the total amount of the components (B) and (C), the semiconductor component and the supporting component tend to be easily separated by irradiation with light containing ultraviolet light, and if it is 40 parts by mass or less, it tends to be less likely to cause curing hindrance and to maintain high heat resistance. The content of the component (A) may be 1 part by mass or more, 1.5 parts by mass or more, or 2 parts by mass or more relative to 100 parts by mass of the total amount of the components (B) and (C), and may be 30 parts by mass or less, 20 parts by mass or less, or 15 parts by mass or less.

[0041] Component (B): A thermosetting resin having a functional group capable of reacting with a hydroxyl group

[0042] (B) component refers to a resin having a functional group capable of reacting with a hydroxyl group and being cured by heat, and is a concept that does not include the (C) component described later. As a functional group capable of reacting with a hydroxyl group, for example, an epoxy group, an oxetane group, etc. can be cited. As (B) component, for example, epoxy resin; oxetane resin; acrylic resin having an epoxy group, an oxetane group, etc., etc. can be cited. Among these, from the perspective of better heat resistance, workability and reliability, (B) component can be an epoxy resin.

[0043] As long as the epoxy resin is cured and has a heat-resistant effect, there is no particular limitation. As the epoxy resin, for example, bifunctional epoxy resins such as bisphenol A type epoxy resin; novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin; alicyclic epoxy resins such as dicyclopentadiene type epoxy resin, etc. can be cited. In addition, the epoxy resin can be, for example, a multifunctional epoxy resin, a glycidylamine type epoxy resin or a heterocyclic epoxy resin. Among these, from the viewpoint of heat resistance and weather resistance, the epoxy resin can also include alicyclic epoxy resins.

[0044] The epoxy resin as the component (B) may be used alone or together with a curing agent for the epoxy resin (hereinafter sometimes referred to as "component (b)"). Examples of the component (b) include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), phenolic resins (phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, phenol aralkyl resins, etc.), and the like.

[0045] The content of component (B) (the total of epoxy resin and epoxy resin curing agent when epoxy resin and epoxy resin curing agent are used simultaneously) can be 10 to 60 parts by mass relative to 100 parts by mass of the total amount of components (B) and (C). The content of component (B) can be 15 parts by mass or more, or 20 parts by mass or less, or 50 parts by mass or less, or 40 parts by mass or less relative to 100 parts by mass of the total amount of components (B) and (C). If the content of component (B) is within the above range, the film forming property, flatness, heat resistance, etc. of the temporary fixing material layer tend to be more excellent.

[0046] (C) Ingredient: Thermoplastic resin

[0047] The component (C) may be a thermoplastic resin or a resin that is thermoplastic at least in an uncured state and forms a cross-linked structure after heating. As the component (C), for example, hydrocarbon resins, phenoxy resins, acrylic rubbers, polycarbonates, polyphenylene sulfides, polyether sulfones, polyether imides, polyimides, petroleum resins, etc. may be cited. Among these, the component (C) may be a hydrocarbon resin, a phenoxy resin, or an acrylic rubber, or may be a hydrocarbon resin.

[0048] Hydrocarbon resin is a resin whose main skeleton is composed of hydrocarbon. As such hydrocarbon resin, for example, ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer elastomer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-non-conjugated diene copolymer, ethylene-1-butene-non-conjugated diene copolymer, ethylene-propylene-1-butene-non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), etc. can be cited. These hydrocarbon resins can be hydrogenated. And, these hydrocarbon resins can be carboxyl-modified by maleic anhydride, etc. Among these, the hydrocarbon resin may include a hydrocarbon resin containing a monomer unit derived from styrene (styrene-based resin), or may include a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0049] The Tg of the component (C) may be -100 to 500°C, -50 to 300°C, or -50 to 50°C. If the Tg of the component (C) is 500°C or less, the tendency is that when a film-like temporary fixing material is formed, flexibility can be easily ensured, and low-temperature adhesion can be improved. If the Tg of the component (C) is -100°C or more, the tendency is that when a film-like temporary fixing material is formed, the decrease in handling and peeling properties caused by excessive flexibility can be suppressed.

[0050] The Tg of the component (C) is a midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the component (C) is a midpoint glass transition temperature calculated by a method in accordance with JIS K 7121 by measuring a heat change under the conditions of a heating rate of 10°C / min and a measuring temperature of -80 to 80°C.

[0051] The weight average molecular weight (Mw) of component (C) can be 10,000 to 5,000,000 or 100,000 to 2,000,000. If the weight average molecular weight is 10,000 or more, it tends to be easy to ensure the heat resistance of the formed temporary fixing material layer. If the weight average molecular weight is 5,000,000 or less, it tends to be easy to suppress the reduction of fluidity and the reduction of adhesion when forming a film-like temporary fixing material layer or resin layer. In addition, the weight average molecular weight is a polystyrene conversion value using a calibration curve based on standard polystyrene by gel permeation chromatography (GPC).

[0052] The content of the component (C) may be 40 to 90 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C). The content of the component (C) may be 50 parts by mass or more or 60 parts by mass or less or 85 parts by mass or less or 80 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C). When the content of the component (C) is within the above range, the film forming property and flatness of the temporary fixing material layer tend to be more excellent.

[0053] The components (B) and (C) may be main components of the temporary fixing film. The total content of the components (B) and (C) may be 60% by mass or more, 70% by mass or more, 80% by mass or more, 85% by mass or more, 90% by mass or more, or 95% by mass or more, based on the total amount of the temporary fixing film (or the total amount of the temporary fixing composition).

[0054] Other Ingredients

[0055] The temporary fixing film 10 may further contain a curing accelerator for accelerating the curing reaction of the component (B) such as an epoxy resin; a polymerizable monomer; a polymerization initiator; an insulating filler; a sensitizer; an antioxidant, and the like as other components.

[0056] Examples of the curing accelerator include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate.

[0057] The content of the curing accelerator can be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the component (B). If the content of the curing accelerator is within this range, the curability of the component (B) and the heat resistance after curing tend to be more excellent. Since the storage modulus is easy to adjust, the content of the curing accelerator can be 0.1 parts by mass or more or 0.3 parts by mass or more, or 3 parts by mass or less or 1 part by mass or less relative to 100 parts by mass of the total amount of the component (B).

[0058] As long as the polymerizable monomer is polymerized by heating or irradiation with ultraviolet light, there is no particular limitation. From the viewpoint of material selectivity and easy availability, the polymerizable monomer can be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group. As a polymerizable monomer, for example, (meth)acrylate, halogenated vinyl, vinyl ether, vinyl ester, vinyl pyridine, vinyl amide, aryl vinyl, etc. can be cited. Among these, the polymerizable monomer can be (meth)acrylate. (Meth)acrylate can be any one of monofunctional (monofunctional), difunctional or trifunctional or more, but from the viewpoint of obtaining sufficient curability, it can also be a (meth)acrylate of difunctional or more.

[0059] The content of the superimposable monomer may be, for example, 0 to 50 parts by mass based on the total amount of the temporary fixing film (or the total amount of the temporary fixing composition).

[0060] The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light, etc. For example, when a compound having an ethylenically unsaturated group is used as a polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

[0061] The content of the polymerization initiator may be 0.01 to 5 parts by mass based on 100 parts by mass of the total amount of the polymerizable monomers.

[0062] The insulating filler can be added for the purpose of imparting low thermal expansion and low hygroscopicity to the resin layer. As the insulating filler, for example, non-metallic inorganic fillers such as silicon dioxide, aluminum oxide, boron nitride, titanium dioxide, glass, and ceramics can be cited. From the viewpoint of dispersibility with the solvent, the insulating filler can be particles whose surface is treated with a surface treatment agent. The surface treatment agent can be, for example, a silane coupling agent.

[0063] The content of the insulating filler may be 0.1 to 20 parts by mass relative to 100 parts by mass of the total amount of the component (B) and the component (C). If the content of the insulating filler is within the above range, the heat resistance tends to be further improved without hindering light transmission. In addition, if the content of the insulating filler is within the above range, it may also contribute to easy stripping.

[0064] Examples of the sensitizer include anthracene, phenanthrene, Benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-isopropyl-9H-thioxanthene-9-one, 1-chloro-4-propoxythioxanthene, etc.

[0065] The content of the sensitizer may be 0.01 to 10 parts by mass based on 100 parts by mass of the total amount of the components (B) and (C). When the content of the sensitizer is within the above range, the properties of the component (B) and the film properties tend to be less affected.

[0066] Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-tert-butylcatechol, aminooxy derivatives such as 2,2,6,6-tetramethylpiperidin-1-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxy, and hindered amine derivatives such as tetramethylpiperidinyl methacrylate.

[0067] The content of the antioxidant may be 0.1 to 10 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C). When the content of the antioxidant is within the above range, decomposition of the component (B) tends to be suppressed, and contamination tends to be prevented.

[0068] From the viewpoint of stress relaxation, the thickness of the temporary fixing film 10 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 50 μm or less.

[0069] In the temporary fixing film 10, the transmittance at at least one of the wavelengths of 308 nm and 355 nm may be 15% or less. The temporary fixing film 10 preferably has a transmittance of 15% or less to light of a wavelength of 355 nm. The temporary fixing film having low transmittance to either the wavelength of 308 nm or the wavelength of 355 nm efficiently absorbs light including ultraviolet light, and thus can separate the semiconductor component and the supporting component by irradiation with the light. The transmittance to light of a wavelength of 308 nm may be 12% or less, 10% or less, 8% or less, 5% or less, or 3% or less. The transmittance to light of a wavelength of 355 nm may be 12% or less, 10% or less, 8% or less, 5% or less, or 3% or less. Regarding the transmittance, by increasing the thickness of the temporary fixing film 10 and increasing the content of the component (A) in the temporary fixing film 10, the transmittance to light of a predetermined wavelength (wavelength 308nm or wavelength 355nm) can be reduced and easily adjusted to a predetermined range (15% or less). In addition, in this specification, the transmittance to light of a wavelength of 308nm or wavelength 355nm refers to the ratio of the intensity of the transmitted light to the intensity of the incident light when light of a predetermined wavelength (light having a wavelength of 308nm or wavelength 355nm as a main wavelength) is incident on the temporary fixing film 10 from one main surface side.

[0070] According to such a temporary fixing film 10, a temporary fixing material layer capable of separating the semiconductor component and the supporting member by irradiation with light including ultraviolet light can be formed.

[0071] [Method for producing temporary fixing film]

[0072] The temporary fixing film 10 is prepared by, for example, first mixing and mixing (A) component, (B) component, (C) component and other components as needed in a solvent to dissolve or disperse them, so as to prepare a varnish of the temporary fixing composition. Then, after applying the varnish of the temporary fixing composition to a supporting film subjected to a demolding treatment using a scraper coater, a roller coater, an applicator, a comma coater, a die coater, etc., the solvent is volatilized by heating, and a temporary fixing film 10 formed by the temporary fixing composition can be formed on the supporting film. The temporary fixing film 10 can be provided with a protective film laminated on the surface of the side opposite to the supporting film. The thickness of the temporary fixing film 10 can be adjusted by adjusting the coating amount of the varnish of the temporary fixing composition.

[0073] The solvent used in the preparation of the varnish of the temporary fixing composition is not particularly limited as long as it has the property of being able to uniformly dissolve or disperse the various components. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-isopropylbenzene; aliphatic hydrocarbons such as hexane and heptane; cycloalkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. Among these, from the viewpoint of solubility and boiling point, the solvent may be toluene, xylene, heptane, or cyclohexanone. The solid content concentration in the varnish may be 10 to 80% by mass based on the total mass of the varnish.

[0074] The stirring, mixing or kneading in preparing the varnish of the temporary fixing composition can be performed using, for example, a stirrer, a pestle, a three-roll mill, a ball mill, a bead mill, a homodispersor or the like.

[0075] As the supporting film, for example, polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamide-imide, polyetherimide, polyether sulfide, polyether sulfone, polyether ketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer films can be cited. These supporting films can be subjected to demolding treatment. The thickness of the supporting film can be, for example, 1 to 250 μm.

[0076] The heating conditions for volatilizing the solvent from the varnish of the temporary fixing composition applied on the support film can be appropriately set according to the solvent used, etc. The heating conditions may be, for example, a heating temperature of 40 to 120° C. and a heating time of 0.1 to 30 minutes.

[0077] Examples of the protective film include the protective films exemplified in the above-mentioned support film. The thickness of the protective film may be, for example, 1 to 250 μm.

[0078] [Laminate for temporary fixing and method for producing the same]

[0079] The structure of the temporary fixing laminate is not particularly limited as long as it includes a supporting member and a temporary fixing material layer formed of the temporary fixing film. Figure 2 (a) Figure 2 (b) and Figure 2 (c) is a schematic cross-sectional view showing one embodiment of a temporary fixing laminate. As a structure of the temporary fixing laminate, for example, Figure 2 The structure of the temporary fixing laminate 20 shown in (a) Figure 2 The structure of the temporary fixing laminate 70 shown in (b) Figure 2The structure of the temporary fixing stack 80 shown in (c) is shown in FIG. The temporary fixing stack 20 includes a supporting member 22 and a temporary fixing material layer 10A formed of a temporary fixing film 10 and provided on the supporting member 22. In the temporary fixing stack 20, the temporary fixing material layer 10A has a surface S1 on the side opposite to the supporting member 22, and the semiconductor component is arranged on the surface S1 of the temporary fixing material layer 10A. The temporary fixing stack 70 includes, in sequence, a supporting member 22, a temporary fixing material layer 10A formed of a temporary fixing film 10, and a curable resin layer 12 formed of a curable resin film. In the temporary fixing stack 70, the curable resin layer 12 has a surface S2 on the side opposite to the temporary fixing material layer 10A, and the semiconductor component is arranged on the surface S2 of the curable resin layer 12. The temporary fixing stack 80 sequentially comprises a supporting member 22, a first curable resin layer 14 formed of a first curable resin film, a temporary fixing material layer 10A formed of a temporary fixing film 10, and a second curable resin layer 16 formed of a second curable resin film. In the temporary fixing stack 80, the second curable resin layer 16 has a surface S3 on the side opposite to the temporary fixing material layer 10A, and the semiconductor component is arranged on the surface S3 of the second curable resin layer 16. In addition, as a structure of the temporary fixing stack other than these, for example, there can be cited a structure sequentially comprising a supporting member, a curable resin layer (first curable resin layer 14), and a temporary fixing material layer formed of a temporary fixing film. According to this temporary fixing stack, at least the temporary fixing material layer 10A is provided, so that the semiconductor component and the supporting member can be separated by irradiating light containing ultraviolet light. The following mainly uses Figure 2 The embodiment of the temporary fixing laminate 20 shown in (a) is taken as an example and described in detail.

[0080] The manufacturing method of the temporary fixing laminate 20 is not particularly limited as long as a temporary fixing laminate having a predetermined structure can be obtained. The temporary fixing laminate 20 can be obtained, for example, by a method including the following steps: attaching the temporary fixing film 10 to the support member 22 to form the temporary fixing material layer 10A.

[0081] The support member 22 is a plate-like body having high transmittance and capable of bearing the load applied to the semiconductor component during processing. Examples of the support member 22 include an inorganic glass substrate and a transparent resin substrate.

[0082] The thickness of the support member 22 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 22 is 0.1 mm or more, operability tends to be easy. If the thickness of the support member 22 is 2.0 mm or less, material costs tend to be reduced.

[0083] Examples of a method for attaching the temporary fixing film 10 to the supporting member 22 include heat pressing, roll lamination, vacuum lamination, and the like. Lamination can be performed at a temperature of 0 to 120°C, for example.

[0084] The temporary fixing material layer 10A may be a layer formed of the temporary fixing film 10. From the viewpoint of stress relaxation, the thickness of the temporary fixing material layer 10A may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 50 μm or less.

[0085] The temporary fixing laminate 70 includes a support member 22, a temporary fixing material layer 10A, and a curable resin layer 12 in sequence. In the temporary fixing laminate 70, by including the curable resin layer 12, it is easy to suppress the tendency of thermal damage to the semiconductor component. In addition, since it is possible to suppress the sintering of the resin of the temporary fixing film or the like to the semiconductor component, it is easy to remove the resin residue from the semiconductor component. The temporary fixing laminate 80 includes a support member 22, a first curable resin layer 14, a temporary fixing material layer 10A, and a second curable resin layer 16 in sequence. In the temporary fixing laminate 80, by including the first curable resin layer 14, it is easy to reduce the heat dissipation to the support member, and the energy of the light irradiation is easily and efficiently converted into heat. In addition, since it is possible to suppress the sintering of the resin of the temporary fixing film or the like to the support member, it is easy to remove the resin residue from the support member.

[0086] The curable resin film used to form the curable resin layer 12, the first curable resin film used to form the first curable resin layer 14, and the second curable resin film used to form the second curable resin layer 16 are not particularly limited as long as they are resin films that show their respective curability. The curable resin film, the first curable resin film, and the second curable resin film may be as follows: in the above-mentioned temporary fixing film 10, the components are composed of components from which the (A) component is removed (that is, the (B) component, the (C) component, and other components (however, the (A) component is excluded). In addition, the curable resin film, the first curable resin film, and the second curable resin film preferably do not contain the (A) component. The curable resin film, the first curable resin film, and the second curable resin film may be the same film.

[0087] The preferred aspects of the components (component (B), component (C), other components, etc.) in the curable resin film, the first curable resin film, and the second curable resin film are the same as the preferred aspects of the components (component (B), component (C), other components, etc.) in the temporary fixing film 10. Therefore, repeated descriptions are omitted here.

[0088] In the curable resin film, the first curable resin film and the second curable resin film, the content of the component (B) (when the epoxy resin and the curing agent for the epoxy resin are used simultaneously, the total amount of the epoxy resin and the curing agent for the epoxy resin) can be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C). The content of the component (B) can be 15 parts by mass or more or 20 parts by mass or more, or 80 parts by mass or less, 70 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, or 40 parts by mass or less relative to 100 parts by mass of the total amount of the components (B) and (C).

[0089] In the curable resin film, the first curable resin film and the second curable resin film, the content of the component (C) may be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C). The content of the component (B) may be 20 parts by mass or more, 30 parts by mass or more, 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more, or 85 parts by mass or less or 80 parts by mass or less relative to 100 parts by mass of the total amount of the components (B) and (C).

[0090] The components (B) and (C) may be the main components of the curable resin film, the first curable resin film, and the second curable resin film, respectively. The total content of the components (B) and (C) may be 60% by mass or more, 70% by mass or more, 80% by mass or more, 85% by mass or more, 90% by mass or more, or 95% by mass or more, based on the total amount of the curable resin film, the total amount of the first curable resin film, or the total amount of the second curable resin film.

[0091] The content of other components in the curable resin film, the first curable resin film, and the second curable resin film may be the same as the content of other components in the temporary fixing film 10 .

[0092] From the viewpoint of achieving both thermal insulation and handling properties, the thickness of the curable resin film and the second curable resin film may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and 200 μm or less, 100 μm or less, or 50 μm or less.

[0093] From the viewpoint of achieving both thermal insulation and light transmittance, the first curable resin film may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and 200 μm or less, 100 μm or less, or 50 μm or less.

[0094] The transmittance of the first curable resin film at at least one of a wavelength of 308 nm and a wavelength of 355 nm may be 80% or more. By setting the transmittance of the first curable resin film within this range, light irradiated from the support member side becomes easy to transmit the temporary fixing laminate, which can suppress the reduction of the separability.

[0095] The manufacturing method of the temporary fixing laminated bodies 70 and 80 is not particularly limited as long as a temporary fixing laminated body having a predetermined structure can be obtained. The temporary fixing laminated body 70 can be obtained, for example, by a method including the following steps: a step of attaching the temporary fixing film 10 to the support member 22 to form the temporary fixing material layer 10A; and a step of attaching a curable resin film to the temporary fixing material layer 10A to form the curable resin layer 12. The temporary fixing laminated body 80 can be obtained by a method including the following steps: a step of attaching the first curable resin film to the support member 22 to form the first curable resin layer 14; a step of attaching the temporary fixing film 10 to the first curable resin layer 14 to form the temporary fixing material layer 10A; and a step of attaching the second curable resin film to the temporary fixing material layer 10A to form the second curable resin layer 16.

[0096] [Method for manufacturing semiconductor device]

[0097] A method for manufacturing a semiconductor device according to one embodiment comprises: a step of preparing the above-mentioned temporary fixing stack (preparation step); a step of temporarily fixing the semiconductor component to a supporting component via a temporary fixing material layer (temporary fixing step); a step of processing the semiconductor component temporarily fixed to the supporting component (processing step); and a step of irradiating the temporary fixing material layer of the temporary fixing stack with light containing ultraviolet light from the supporting component side to separate the semiconductor component from the supporting component (separation step). Figure 2 The embodiment of the temporary fixing laminate 20 shown in (a) is taken as an example and described in detail.

[0098] (Preparation process)

[0099] In the preparation step, in order to manufacture a semiconductor device, a temporary fixing laminate 20 is prepared for temporarily fixing the semiconductor component to the supporting member while the semiconductor component is being processed.

[0100] (Temporary fixing process)

[0101] Figure 3 (a) and Figure 3(b) is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. In the temporary fixing step, the semiconductor component 40 is temporarily fixed to the support member 22 via the temporary fixing material layer 10A. The temporary fixing material layer 10A has a surface S1 on the side opposite to the support member 22 of the temporary fixing material layer 10A. In the temporary fixing step, for example, by arranging the semiconductor component 40 on the temporary fixing material layer 10A (refer to Figure 3 The temporary fixing material layer 10A (temporary fixing film 10) is cured under the condition of (a) to temporarily fix the semiconductor component 40 to the supporting component 22 (refer to Figure 3 In other words, the semiconductor component 40 can be temporarily bonded to the support member 22 via the temporary fixing material layer 10Ac formed by the cured product of the temporary fixing film 10. In this way, a stacked body 30 including the temporary fixing stacked body 20c and the semiconductor component 40 provided on the temporary fixing stacked body 20c is formed.

[0102] The semiconductor component 40 may be a component having a semiconductor substrate 42 such as a semiconductor wafer or a semiconductor chip. The semiconductor component 40 may be, for example, a semiconductor chip with a redistribution layer having a redistribution layer 44 and a semiconductor substrate 42. When the semiconductor component 40 is a semiconductor chip with a redistribution layer, the semiconductor chip with a redistribution layer is temporarily fixed to the support component 22 via the temporary fixing material layer 10A in an orientation such that the redistribution layer is located on the temporary fixing material layer 10A side. The semiconductor component 40 may further have an external connection terminal. Figure 3 In the example (a), a plurality of semiconductor components 40 are arranged on the temporary fixing material layer 10A, but the number of semiconductor components 40 may be 1. From the viewpoint of miniaturization and thinning of the semiconductor device and suppression of cracks during transportation and processing steps, the thickness of the semiconductor component 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm.

[0103] The semiconductor component 40 disposed on the temporary fixing material layer 10A is pressed onto the temporary fixing material layer 10A using, for example, a vacuum press or a vacuum laminator. When a vacuum press is used, the pressing conditions may be an air pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When a vacuum laminator is used, the pressing conditions may be, for example, an air pressure of 1 hPa or less, a pressing temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0104] After the semiconductor component 40 is arranged on the temporary fixing material layer 10A, the component (B) in the temporary fixing material layer 10A is thermally cured or photocured, thereby temporarily fixing the semiconductor component 40 to the support member 22 via the temporary fixing material layer 10Ac including the cured product of the temporary fixing film 10. The conditions for thermal curing may be, for example, 300° C. or less or 100 to 250° C. and 1 to 180 minutes or 1 to 120 minutes.

[0105] (Processing steps)

[0106] Figure 4 (a) Figure 4 (b) and Figure 4 (c) is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device. In the processing step, the semiconductor component 40 temporarily fixed to the support member 22 is processed. Figure 4 (a) represents an example of processing including thinning of a semiconductor substrate. Processing of semiconductor components is not limited thereto, and may include, for example, thinning of a semiconductor substrate, segmentation (cutting) of semiconductor components, formation of through electrodes (silicon through electrodes), etching, plating reflow, sputtering, or a combination thereof.

[0107] After processing the semiconductor component 40, as Figure 4 As shown in (b), a sealing layer 50 is formed to seal the processed semiconductor component 40. The sealing layer 50 can be formed using a sealing material commonly used in the manufacture of semiconductor elements. For example, the sealing layer 50 can be formed from a thermosetting resin composition. As the thermosetting resin composition used in the sealing layer 50, for example, epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin can be cited. The sealing layer 50 and the thermosetting resin composition used to form the sealing layer 50 may contain additives such as fillers and / or flame retardants.

[0108] The sealing layer 50 is formed, for example, using a solid material, a liquid material, a granular material or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, or the like is used. For example, these devices are used to cover the semiconductor component 40 with a sealing film that is heat-melted under the conditions of 40 to 180° C. (or 60 to 150° C.), 0.1 to 10 MPa (or 0.5 to 8 MPa) and 0.5 to 10 minutes, thereby forming the sealing layer 50. The thickness of the sealing film is adjusted so that the sealing layer 50 becomes greater than the thickness of the processed semiconductor component 40. The thickness of the sealing film can be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0109] After forming the sealing layer 50, as Figure 4As shown in (c), the sealing layer 50 and the temporary fixing material layer 10Ac can be divided into a plurality of parts each including one semiconductor component 40 .

[0110] Figure 5 (a) and Figure 5 (b) is a schematic cross-sectional view showing an embodiment of a method for manufacturing a semiconductor device. Figure 5 As shown in (a), the temporarily fixing stack 20c is irradiated with light A from the side of the supporting part 22, thereby separating the semiconductor component 40 from the supporting part 22. Light A can be light containing ultraviolet light, or light containing a wavelength of 200 to 400 nm (near ultraviolet light). Through the irradiation of light A, the (A) component in the temporary fixing material layer 10Ac absorbs light A, and for example, the molecular chain of the high molecular weight component is cut by thermal energy, and the high molecular weight component can be reduced in molecular weight (melting of the solidified material). This phenomenon becomes the main reason for the cohesion and peeling of the temporary fixing material layer 10Ac, and the semiconductor component 40 can be easily separated from the supporting part 22. In order to separate the semiconductor component 40 from the supporting part 22, a small amount of stress can be applied to the semiconductor component 40 under the irradiation of light A.

[0111] Examples of the light source of the light A in the separation step include a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, and a laser. Among these, the light source of the light A may be a laser.

[0112] Examples of the laser include solid lasers such as YAG lasers, liquid lasers such as dye lasers, and gas lasers such as excimer lasers. Among these, the laser may be an excimer laser.

[0113] Examples of the excimer laser include ArF excimer laser (excitation wavelength: 193 nm), KrF excimer laser (excitation wavelength: 248 nm), XeCl excimer laser (excitation wavelength: 308 nm), and XeF excimer laser (excitation wavelength: 351 nm).

[0114] The irradiation conditions of the laser include applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporary fixing material layer), irradiation energy, etc., and these can be arbitrarily set according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor component 40, the irradiation conditions of the laser can be set so that the semiconductor component 40 can be separated in a small number of times.

[0115] Sometimes, a portion of the temporary fixing material layer 10Ac (or a portion of the cured curable resin layer) is attached as residue to the separated semiconductor component 40. Figure 5The attached residue can be removed as shown in (b). The attached residue can be removed, for example, by washing with a solvent, or by peeling. The solvent is not particularly limited, but ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. can be cited. In order to remove the attached residue, the semiconductor component 40 can be immersed in a solvent, or ultrasonic cleaning can be performed. The semiconductor component 40 can be heated at a low temperature of about 100°C or less.

[0116] By the method exemplified above, it is possible to obtain the semiconductor element 60 including the processed semiconductor component 40. The obtained semiconductor element 60 can be connected to another semiconductor element or a semiconductor element mounting substrate to manufacture a semiconductor device.

[0117] [Temporary fixing composition]

[0118] A temporary fixing composition according to one embodiment is used for temporarily fixing a semiconductor component and a supporting component. The temporary fixing composition contains a UV absorber having a hydroxyl group, a thermosetting resin having a functional group capable of reacting with the hydroxyl group, and a thermoplastic resin. The thermosetting resin may be an epoxy resin. The thermoplastic resin may be a hydrocarbon resin.

[0119] The preferred embodiments of the components (component (A), component (B), component (C), other components, etc.) in the temporary fixing composition are the same as the preferred embodiments of the components (component (A), component (B), component (C), other components, etc.) in the temporary fixing film 10. Therefore, repeated descriptions are omitted here. In addition, the content of each component in the temporary fixing composition may be the same as the content of each component in the temporary fixing film.

[0120] Example

[0121] Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

[0122] [Preparation and evaluation of temporary fixing film]

[0123] (Examples 1-1 to 1-3 and Comparative Examples 1-1 and 1-2)

[0124] (Examples 2-1 to 2-6)

[0125] <Preparation of temporary fixing film>

[0126] The following materials were used to prepare the temporary fixing film.

[0127] (A) Component: UV absorber having a hydroxyl group

[0128] (A-1) 2,4,6-tris(2-hydroxy-4-hexyloxy-3-methylphenyl)-1,3,5-triazine (triazine-based ultraviolet absorber, product name: LA-F70, manufactured by ADEKA Corporation)

[0129] (A-2) 2-(2H-benzotriazol-2-yl)-4,6-bis(1-methyl-1-phenylethyl)phenol (benzotriazole-based ultraviolet absorber, product name: LA-24, manufactured by ADEKA Corporation)

[0130] Component (B): A thermosetting resin having a functional group capable of reacting with a hydroxyl group

[0131] (B-1) Dicyclopentadiene epoxy resin (product name: HP7200H, manufactured by DIC CORPORATION) The component (B-1) was used as a 50 mass % solution in cyclohexanone.

[0132] (C) Ingredient: Thermoplastic resin

[0133] (C-1) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1924GT, manufactured by Clayton Polymer Japan Co., Ltd., styrene content: 13% by mass). The component (C-1) was used as a 25% by mass xylene solution.

[0134] (C-2) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, manufactured by Clayton Polymer Japan Co., Ltd., styrene content: 30% by mass). Component (C-2) was used as a 25% by mass xylene solution.

[0135] Other Ingredients

[0136] (D) Curing accelerator

[0137] (D-1) Imidazole derivative (product name: 2PZ-CN, manufactured by SHIKOKU CHEMICALS CORPORATION) The component (D-1) was used as a 10 mass % solution in cyclohexanone.

[0138] (E) Antioxidants

[0139] (E-1) Hindered phenol derivative (product name: AO-60, manufactured by ADEKA Corporation), used as a 10 mass % concentration cyclohexanone solution.

[0140] The materials shown in Tables 1 and 2 were used in the parts by mass shown in Tables 1 and 2 (the numerical values ​​in Tables 1 and 2 refer to the amount of non-volatile components). The materials were mixed with 302.4 parts by mass of toluene and 4.5 parts by mass of cyclohexanone as solvents to obtain a varnish of a temporary fixing composition. The obtained varnish of the temporary fixing composition was applied to the release-treated surface of a supporting film (Purex A31B (product name, light-peel type, polyethylene terephthalate (PET) film, TOYOBO FILMSOLUTIONS LIMITED, thickness: 38 μm)) using a precision coater. The solvent was removed by heating the coating film at 100°C for 10 minutes to obtain temporary fixing films of Examples 1-1 to 1-9 and Comparative Examples 1-1 and 1-2 having the thicknesses shown in Tables 1 and 2. A protective film (Purex A70J (product name, heavy release type, PET film, TOYOBO FILM SOLUTIONS LIMITED, thickness: 38 μm)) was laminated to the surface of the temporary fixing film opposite to the support film so that its release-treated surface was in contact with the temporary fixing film.

[0141] <Evaluation of temporary fixing film>

[0142] The transmittance at a wavelength of 308 nm or 355 nm was measured using the temporary fixing films of Examples 1-1 to 1-3 and Comparative Examples 1-1, 1-2, and Examples 2-1 to 2-6. The temporary fixing films were cut into 5 cm squares to obtain the measurement samples. As the measurement device, an ultraviolet visible near infrared spectrophotometer SolidSpec-3700 (Shimadzu Corporation) was used, and the ratio of the intensity of the transmitted light to the intensity of the incident light when light of a wavelength of 308 nm or a wavelength of 355 nm was incident on the measurement sample from one main surface side was calculated as the transmittance. The results are shown in Tables 1 and 2.

[0143] [Table 1]

[0144]

[0145] [Table 2]

[0146]

[0147] [Preparation of Temporary Fixing Laminated Body and Test Laminated Body (i)]

[0148] (Examples 3-1 to 3-3 and Comparative Examples 3-1 and 3-2)

[0149] <Production of a laminate for temporary fixing>

[0150] The temporary fixing films of Examples 1-1 to 1-3 and Comparative Examples 1-1 and 1-2 were used to produce respective temporary fixing laminates. The supporting film was peeled off from the temporary fixing film, and the temporary fixing film was laminated on a glass substrate (product name: EAGLE XG, manufactured by CORNING Incorporated, size: 20 mm×20 mm, thickness: 0.7 mm) as a supporting member using a vacuum pressure laminator under the conditions of a pressure of 0.5 MPa, a temperature of 100° C., and a pressurization time of 60 seconds, thereby producing temporary fixing laminates of Examples 3-1 to 3-3 and Comparative Examples 3-1 and 3-2.

[0151] <Preparation of test laminate>

[0152] Next, the protective film on the temporary fixing material layer side formed by the temporary fixing film of the temporary fixing laminated bodies of Examples 3-1 to 3-3 and Comparative Examples 3-1 and 3-2 was peeled off, and a silicon wafer (size: 20 mm×20 mm, thickness: 150 μm) as a semiconductor component was laminated on the temporary fixing material layer using a vacuum pressure laminator under the conditions of a pressure of 0.5 MPa, a temperature of 100° C., and a pressurization time of 60 seconds. Thereafter, the temporary fixing material layer was cured by heating at 200° C. for 1 hour, and the test laminated bodies of Examples 3-1 to 3-3 and Comparative Examples 3-1 and 3-2 having semiconductor components temporarily fixed to a supporting member were prepared.

[0153] [Preparation of Temporary Fixing Laminated Body and Test Laminated Body (ii)]

[0154] (Examples 4-1 to 4-8)

[0155] <Production of curable resin film>

[0156] The following materials were used to prepare the curable resin film.

[0157] Component (B): A thermosetting resin having a functional group capable of reacting with a hydroxyl group

[0158] (B-1) Dicyclopentadiene epoxy resin (product name: HP7200H, manufactured by DIC CORPORATION) The component (B-1) was used as a 50 mass % solution in cyclohexanone.

[0159] (B-2) o-cresol novolac epoxy resin (product name: N-500P-10, manufactured by DIC CORPORATION) The component (B-2) was used in the form of a 50% by mass solution in cyclohexanone.

[0160] (B-3) Bisphenol F type liquid epoxy resin (product name: YL983U, manufactured by Mitsubishi Chemical Corporation) The component (B-3) was used directly without dilution.

[0161] (b) Component: Curing agent for epoxy resin

[0162] (b-1) Phenol novolac resin (product name: MEH-7800, manufactured by MEIWA PLASTIC INDUSTRIES, LTD.) The component (b-1) was used as a 50 mass % concentration cyclohexanone solution.

[0163] (C) Ingredient: Thermoplastic resin

[0164] (C-1) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1924GT, manufactured by Clayton Polymer Japan Co., Ltd., styrene content: 13% by mass). The component (C-1) was used as a 25% by mass xylene solution.

[0165] (C-2) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, manufactured by Clayton Polymer Japan Co., Ltd., styrene content: 30% by mass). Component (C-2) was used as a 25% by mass xylene solution.

[0166] (C-3) Biphenylfluorene type phenoxy resin (product name: FX293, manufactured by NIPPON STEEL Chemical & Material Co., Ltd.) The component (C-3) was used as a 15 mass % solution in cyclohexanone.

[0167] (C-4) Acrylic rubber (product name: HTR-860-P3, manufactured by Nagase ChemteX Corporation) The component (C-4) was used in the form of a 12 mass % concentration methyl ethyl ketone solution.

[0168] (D) Curing accelerator

[0169] (D-1) Imidazole derivative (product name: 2PZ-CN, manufactured by SHIKOKU CHEMICALS CORPORATION) The component (D-1) was used as a 10 mass % solution in cyclohexanone.

[0170] (E) Antioxidants

[0171] (E-1) Hindered phenol derivative (product name: AO-60, manufactured by ADEKA Corporation), used as a 10 mass % concentration cyclohexanone solution.

[0172] The materials shown in Table 3 were used in the parts by mass shown in Table 3 (the values ​​in Table 3 refer to the amount of non-volatile components). The materials were mixed with 302.4 parts by mass of toluene and 4.5 parts by mass of cyclohexanone as solvents to obtain a varnish of a temporary fixing composition. The obtained varnish of the temporary fixing composition was applied to the release-treated surface of a supporting film (Purex A31B (product name, light-peel type, polyethylene terephthalate (PET) film, TOYOBO FILM SOLUTIONS LIMITED, thickness: 38 μm)) using a precision coater. The solvent was removed by heating the coating film at 100°C for 10 minutes to obtain a curable resin film of Manufacturing Examples 1 to 3 with a thickness of 30 μm. A protective film (Purex A70J (product name, heavy release type, PET film, TOYOBO FILM SOLUTIONS LIMITED, thickness: 38 μm)) was bonded to the surface of the obtained curable resin film opposite to the support film so that its release-treated surface was in contact with the curable resin film.

[0173] [Table 3]

[0174]

[0175] <Production of a laminate for temporary fixing>

[0176] Temporary fixing laminates of the structure shown in Table 5 were prepared using the temporary fixing films of Examples 2-1 to 2-6 and the curable resin films of Production Examples 1 to 3. The supporting films were peeled off from the respective films, and the exposed surfaces were bonded to each other using a pressurized roll laminator under the conditions of a pressure of 0.2 MPa, a temperature of 100° C., and a speed of 0.2 m / min, thereby obtaining a double-layer film. Next, the protective film on the temporary fixing film side of the double-layer film was peeled off, and the double-layer film was laminated in the same manner as in <Preparation of temporary fixing laminate> of [Preparation of temporary fixing laminate and test laminate (i)] above, with the peeled surface thereof in contact with the supporting member, thereby preparing temporary fixing laminates of Examples 4-1 to 4-8 having a supporting member, a temporary fixing material layer, and a curable resin layer in this order.

[0177] <Preparation of test laminate>

[0178] Next, in the same manner as in the above-mentioned [Preparation of a temporary fixing laminate and a test laminate (i)] <Preparation of a test laminate>, semiconductor components were stacked on the curable resin layer, and the temporary fixing material layer and the curable resin layer were cured under the same conditions, thereby preparing the test laminates of Examples 4-1 to 4-8.

[0179] [Preparation of Temporary Fixing Laminated Body and Test Laminated Body (iii)]

[0180] (Examples 5-1 to 5-3)

[0181] <Preparation of the first curable resin film and the second curable resin film>

[0182] As the first curable resin film and the second curable resin film, the first curable resin film of Production Example 1 was prepared.

[0183] <Production of a laminate for temporary fixing>

[0184] A temporary fixing laminate having the structure shown in Table 6 was prepared using the temporary fixing films of Examples 2-1 to 2-3, the first curable resin film, and the second curable resin film. First, a two-layer film formed of the temporary fixing films of Examples 2-1 to 2-3 and the first curable resin film was obtained in the same manner as in <Preparation of a temporary fixing laminate> of [Preparation of a temporary fixing laminate and a test laminate (ii)] above. Next, the protective film on the temporary fixing material layer side formed of the temporary fixing film of Example 1-3 and the support film of the second curable resin film of the two-layer film were peeled off, and the exposed surfaces were bonded together using a pressure roll laminator under the conditions of a pressure of 0.2 MPa, a temperature of 100° C., and a speed of 0.2 m / min, thereby obtaining a three-layer film. Next, the protective film on the first curable resin film side of the three-layer film is peeled off, and the three-layer film is stacked in the same manner as in the above-mentioned [Preparation of temporary fixing laminated body and test laminated body (i)] in the direction where the peeled surface is in contact with the supporting member, thereby preparing the temporary fixing laminated body of Examples 5-1 to 5-3, which sequentially comprises a supporting member, a first curable resin layer, a temporary fixing material layer and a second curable resin layer.

[0185] <Preparation of test laminate>

[0186] Next, the semiconductor component is stacked on the second curable resin layer in the same manner as in the above-mentioned [Preparation of a temporary fixing stack and a test stack (i)], and the temporary fixing material layer, the first curable resin layer and the second curable resin layer are cured under the same conditions, thereby preparing the test stacks of Examples 5-1 to 5-3.

[0187] [Evaluation of Test Laminated Body]

[0188] <Evaluation of Separability>

[0189] Each test laminate was irradiated with ultraviolet laser light at a wavelength of 355 nm or 308 nm, and the separability when the semiconductor component was separated from the supporting member was evaluated.

[0190] ·Test conditions at wavelength 355nm

[0191] For each test stack, a UV laser marker (PU-L3A manufactured by Laser Works Inc., beam diameter: 20 μm) was used, and ultraviolet laser was irradiated under the condition of a wavelength of 355 nm. The light irradiation based on the laser was carried out from the supporting component (glass substrate) side of the test stack, and the irradiation time was set to 5 minutes for approximately every 5 cm square. Regarding the evaluation of separability, after the laser-based light irradiation, the situation where the silicon wafer was separated from the glass substrate by applying an external force to the silicon wafer was set as excellent separability and evaluated as "A", and the situation where the silicon wafer was not separated from the glass substrate even if an external force was applied was evaluated as "B". The results are shown in Tables 4, 5 and 6.

[0192] ·Test conditions at wavelength 308nm

[0193] Each test laminate was irradiated with a KrF excimer laser at a wavelength of 308 nm and a pulse energy of 1300 mJ / cm 2 and ultraviolet pulse laser with a repetition frequency of 30kHz. IPEX-848 manufactured by Optec was used as the KrF excimer laser, and the entire surface of the supporting component (glass substrate) of the test stack was irradiated from the supporting component side at a scanning speed of 18.5mm / s based on laser light irradiation. Regarding the evaluation of separability, after the laser light irradiation, the case where the silicon wafer was separated from the glass substrate by applying an external force to the silicon wafer was considered to have excellent separability and was evaluated as "A", and the case where the silicon wafer was not separated from the glass substrate even when an external force was applied was evaluated as "B". The results are shown in Tables 4, 5 and 6. In addition, when the separability is evaluated as "A", the cumulative light amount (mJ / cm 2 ).

[0194] <Evaluation of residue removability>

[0195] After the above-mentioned evaluation of the separability was performed, the removability of the residues attached to the supporting component (glass substrate) side (mainly the residues of the temporarily fixed material layer that was cured and the residues of the first curable resin layer that was cured) and the residues attached to the semiconductor component (silicon wafer) side (mainly the residues of the temporarily fixed material layer that was cured, the residues of the curable resin layer that was cured, and the residues of the second curable resin layer that was cured) was evaluated. For the residues attached to the supporting component side, the residues were wiped with a wiping cloth (waste), and the case where the removal of the residues was extremely easy was evaluated as "A", the case where the removal was easy was evaluated as "B", the case where the removal was possible was evaluated as "C", and the case where the removal was not sufficient was evaluated as "D". The results are shown in Tables 4, 5, and 6. In addition, for the residues attached to the semiconductor component side, the residues were peeled off (peeled off), and the case where the removal of the residues was extremely easy was evaluated as "A", the case where the removal was easy was evaluated as "B", the case where the removal was possible was evaluated as "C", and the case where the removal was not sufficient was evaluated as "D". The results are shown in Tables 4, 5 and 6.

[0196] [Table 4]

[0197]

[0198] [Table 5]

[0199]

[0200] [Table 6]

[0201]

[0202] As shown in Tables 4, 5, and 6, the temporary fixing laminate (test laminate) having a temporary fixing material layer formed of the temporary fixing films of Examples 1-1 to 1-3 and Examples 2-1 to 2-6 was excellent in separability. From these results, it was confirmed that the temporary fixing film of the present invention can form a temporary fixing material layer capable of separating a semiconductor component and a supporting component by irradiating light including ultraviolet light.

[0203] Explanation of symbols

[0204] 10-film for temporary fixing, 10A, 10Ac-temporary fixing material layer, 12-curable resin layer, 14-first curable resin layer, 16-second curable resin layer, 20, 70, 80, 20c-temporary fixing stack, 22-support component, 30-stack, 40-semiconductor component, 42-semiconductor substrate, 44-rewiring layer, 50-sealing layer, 60-semiconductor element.

Claims

1. A temporary fixing film for temporarily fixing a semiconductor component and a supporting component, The temporary fixing film contains an ultraviolet absorber having a hydroxyl group, a thermosetting resin having a functional group capable of reacting with the hydroxyl group, and a thermoplastic resin.

2. The temporary fixing film according to claim 1, wherein The thermosetting resin is epoxy resin.

3. The temporary fixing film according to claim 1, wherein The thermoplastic resin is a hydrocarbon resin.

4. The temporary fixing film according to claim 1, wherein The transmittance at at least one of a wavelength of 308 nm and a wavelength of 355 nm is 15% or less. 5 . A temporary fixing laminate comprising a supporting member and a temporary fixing material layer provided on the supporting member and formed of the temporary fixing film according to claim 1 . 6 . The temporary fixing laminate according to claim 5 , further comprising a curable resin layer provided on the temporary fixing material layer. 7 . A temporary fixing laminate comprising a supporting member, a first curable resin layer, and a temporary fixing material layer formed of the temporary fixing film according to claim 1 , in this order. 8 . The temporary fixing laminate according to claim 7 , further comprising a second curable resin layer provided on the temporary fixing material layer.

9. A method for manufacturing a semiconductor device, comprising: A step of preparing a temporary fixing laminate according to any one of claims 5 to 8; A step of temporarily fixing the semiconductor component on the supporting member via the temporary fixing material layer; a step of processing the semiconductor component temporarily fixed to the supporting member; and and a step of irradiating the temporary fixing material layer of the temporary fixing laminate with light including ultraviolet light from the supporting member side to separate the semiconductor component from the supporting member.

10. A temporary fixing composition for temporarily fixing a semiconductor component and a supporting component, The temporary fixing composition contains an ultraviolet absorber having a hydroxyl group, a thermosetting resin having a functional group capable of reacting with the hydroxyl group, and a thermoplastic resin.

11. The temporary fixing composition according to claim 10, wherein The thermosetting resin is epoxy resin.

12. The temporary fixing composition according to claim 10, wherein The thermoplastic resin is a hydrocarbon resin.

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