Deposition equipment
By setting a moving mechanism and photoelectric sensor on the stage of the deposition device, the overlapping state of the wafer is automatically adjusted, and the problems of poor heat uniformity of the wafer and defects in the ventilation panel are solved, thereby achieving higher deposition layer uniformity and equipment reliability.
Patent Information
- Application Number
- CN202411781937.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-05
- Publication Date
- 2025-04-01
AI Technical Summary
In semiconductor deposition equipment, poor overlap of wafers leads to poor heat uniformity and poor uniformity of deposition layers, which may lead to scrapping of wafers, and the spacing between the ventilation panel and the wafer surface is too small, resulting in arc and particle defects.
A deposition device is designed, with multiple moving mechanisms and photoelectric sensors on the stage, and the wafer overlapping condition is judged through the photoelectric sensor, and the wafer position is automatically adjusted by the mobile mechanism to make it fully contact the surface of the stage, and the friction force is increased through the lifting and lowering protrusions to avoid obstruction when the wafer is pushed back.
The uniform heating of the wafer in the deposition equipment is achieved, the uniformity of the deposition layer is improved, the scrap rate of the wafer is reduced, the reliability of the deposition equipment is improved, and the arc and particle defects of the ventilation panel are avoided.
Smart Images
Figure CN119736580A_ABST
Abstract
Description
Technical Field
[0001] The embodiments of the present application relate to the field of semiconductor technology, and in particular to a deposition device. Background Art
[0002] Chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) are all commonly used thin film deposition equipment and are widely used in the manufacturing processes of integrated circuits, light-emitting diodes and displays.
[0003] In the corresponding semiconductor deposition equipment, a chamber for the reaction between gas and wafer is provided, and a carrier for loading wafer is provided in the chamber. The carrier is equipped with a heating device, which can heat the wafer to a specified temperature. A slot for placing the wafer is usually provided on the carrier to fix the relative position of the wafer and the carrier.
[0004] Under normal circumstances, after the wafer is placed on the stage, the surface of the wafer is completely in contact with the surface of the carrier, and the top surface of the wafer is lower than the top surface of the edge of the slot. However, if the four sides of the wafer overlap on the edge of the slot, part of the surface of the wafer is in contact with the carrier, and part of the surface is above the slot. This will cause the temperature of the part of the wafer that contacts the carrier to be higher, and the temperature of the part that does not contact the carrier to be lower, which will reduce the uniformity of the heat of the wafer, and the deposition rates in different areas will be different. Finally, the uniformity of the film layer deposited on the surface of the wafer will deteriorate, which may lead to the adverse consequence of scrapping the wafer. In addition, when the four sides of the wafer overlap on the edge of the slot, the distance between the ventilation panel in the cavity and part of the surface of the wafer will be too small, which will cause arcing and particle defects when the ventilation panel is connected to a larger RF power supply, and in severe cases, the ventilation panel will be damaged.
[0005] Therefore, the reliability of deposition equipment needs to be improved. Summary of the invention
[0006] The embodiment of the present application provides a deposition device, which at least helps to improve the reliability of the deposition device.
[0007] According to some embodiments of the present application, on the one hand, the embodiments of the present application provide a deposition device, including: a chamber, a carrier is arranged in the chamber, and the surface of the carrier is used to place wafers; multiple moving mechanisms, the moving mechanisms are located on the carrier, two moving mechanisms are arranged relatively along a first direction, and two moving mechanisms are arranged relatively along a second direction, the first direction intersects with the second direction, and the multiple moving mechanisms enclose a placement area, the placement area is used to place wafers, and each moving mechanism can reciprocate in a direction spreading from the center of the placement area to the surroundings; multiple photoelectric sensors, at least one photoelectric sensor is arranged on the top surface of each moving mechanism, and the photoelectric sensor is used to obtain the state of the wafer in the placement area; a controller, the controller is connected to the photoelectric sensor and the moving mechanism, if the controller obtains through the photoelectric sensor that the wafer is overlapped on the corresponding moving mechanism, then the moving mechanism is controlled to move away from the center of the placement area, until the photoelectric sensor can no longer obtain that the wafer is overlapped on the corresponding moving mechanism, and then the moving mechanism is controlled to move towards the center of the placement area.
[0008] In some embodiments, the surface of the moving mechanism facing the placement area is an inclined surface.
[0009] In some embodiments, the angle between the inclined surface and the carrier surface is 45° to 90°.
[0010] In some embodiments, the photosensor is located on the inclined surface.
[0011] In some embodiments, the emitted light of the photosensor is fan-shaped, with one side of the fan-shaped being perpendicular to the inclined plane, and the other side of the fan-shaped being parallel to the inclined plane and oriented in a direction away from the placement area of the photosensor.
[0012] In some embodiments, the height of the photosensor relative to the stage surface is greater than the thickness of the wafer.
[0013] In some embodiments, a plurality of lifting protrusions are provided in the carrier, and the lifting protrusions are located in the placement area. The controller is connected to the lifting protrusions. The controller controls the moving mechanism to move away from the center direction of the placement area while controlling the lifting protrusions to rise to protrude from the surface of the carrier; the controller controls the moving mechanism to move toward the center direction of the placement area while controlling the lifting protrusions to fall below the surface of the carrier.
[0014] In some embodiments, when the controller controls the moving mechanism to move away from the center of the placement area, part of the lifting protrusions located in the placement area close to the moving mechanism side rises, and another part of the lifting protrusions located in the placement area away from the moving mechanism side remain in a falling state.
[0015] In some embodiments, the material of the lift protrusions includes quartz, aluminum nitride, silicon nitride, or silicon oxide.
[0016] In some embodiments, a pressure sensor is disposed on a surface of the bottom of the moving mechanism facing the placement area.
[0017] The technical solution provided by the embodiments of the present application has at least the following advantages:
[0018] In the deposition equipment provided by the embodiment of the present application, a carrier for placing a wafer is arranged in the cavity, and a plurality of moving mechanisms are arranged on the carrier, two moving mechanisms are arranged relative to each other along a first direction, and two moving mechanisms are arranged relative to each other along a second direction, and the first direction intersects with the second direction, so that when the wafer is overlapped on any moving mechanism, the corresponding moving mechanism can move away from the center direction of the placement area to make the wafer fall to the surface of the carrier. A photoelectric sensor is also arranged on the moving mechanism, and the photoelectric sensor is used to obtain the state of the wafer in the placement area. For example, when the wafer is overlapped on a certain moving mechanism, the light of the corresponding photoelectric sensor is blocked by the wafer, so that it can be determined on which moving mechanism the wafer is overlapped. The moving mechanism and the photoelectric sensor are both connected to the controller. If the controller obtains that the wafer is overlapped on the corresponding moving mechanism through the photoelectric sensor, the moving mechanism is controlled to move in the direction away from the center of the placement area until the photoelectric sensor cannot obtain that the wafer is overlapped on the corresponding moving mechanism, and the moving mechanism is controlled to move in the direction close to the center of the placement area. In this way, the controller can realize automatic operation. After the photoelectric sensor determines the overlap condition of the wafer, the corresponding moving mechanism is used to move in the direction away from the placement area so that the wafer falls back on the surface of the stage, and the corresponding moving mechanism is further controlled to move in the direction close to the center of the placement area so that the wafer is pushed back to the position aligned with the placement area. Through the deposition equipment provided by the embodiment of the present application, after the wafer is placed on the stage, it can automatically determine whether the wafer completely falls into the position corresponding to the placement area. If there is an overlap problem in the wafer, resulting in the wafer surface not being completely in contact with the stage surface, the state of the wafer can be adjusted by the corresponding moving mechanism so that the wafer can be just in the corresponding area of the placement area and completely in contact with the surface of the stage. In the subsequent deposition process, the wafer can be heated evenly, which is conducive to reducing the scrap rate of the wafer and improving the reliability of the deposition equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise specified, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present application or the technical solutions in the traditional technology, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0020] Figure 1A schematic diagram of the structure of a deposition device provided in an embodiment of the present application;
[0021] Figure 2 A top view of a carrier provided in an embodiment of the present application;
[0022] Figure 3 A schematic diagram of a cross-sectional structure of a carrier provided in an embodiment of the present application;
[0023] Figure 4 A schematic diagram of the cross-sectional structure of another carrier provided in an embodiment of the present application. DETAILED DESCRIPTION
[0024] As can be seen from the background technology, the reliability of deposition equipment needs to be improved.
[0025] In the deposition device provided in the embodiment of the present application, after the wafer is placed on the carrier, it can be automatically determined whether the wafer has completely fallen into the position corresponding to the placement area. If there is an overlapping problem with the wafer, resulting in the wafer surface not being in complete contact with the carrier surface, the state of the wafer can be adjusted through the corresponding moving mechanism so that the wafer can be exactly in the corresponding area of the placement area and in complete contact with the surface of the carrier. In the subsequent deposition process, the wafer can be heated evenly, which is beneficial to reduce the scrap rate of the wafer and improve the reliability of the deposition equipment.
[0026] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features.
[0027] In the description of the embodiments of the present application, “plurality” means more than two, unless otherwise clearly and specifically defined.
[0028] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0029] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.
[0030] In the description of the embodiments of the present application, technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.
[0031] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.
[0032] In the accompanying drawings corresponding to the embodiments of the present application, the thickness and area of the layer are magnified for better understanding and ease of description. When describing a component on another component or on the surface of another component, the component may be "directly" located on the surface of the other component, or a third component may be present between the two components. On the contrary, when describing a component on the surface of another component or when another component is formed or provided on the surface of a component, it means that there is no third component between the two components. In addition, when describing a component as "substantially" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a partial edge of the entire surface.
[0033] In the description of the embodiments of the present application, when a certain component “includes” another component, unless otherwise stated, other components are not excluded and other components may be further included.
[0034] The terms used in the description of the various described embodiments herein are used only to describe specific embodiments and are not intended to be limiting. As used in the description of the various described embodiments and the appended claims, "components" are also intended to include plural forms unless the context clearly indicates otherwise.
[0035] The following will describe the various embodiments of the present application in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present application, many technical details are provided in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solution claimed in the present application can be implemented.
[0036] Figure 1 A schematic diagram of the structure of a deposition device provided in an embodiment of the present application; Figure 2 A top view of a carrier provided in an embodiment of the present application.
[0037] refer to Figure 1 The deposition device provided by the embodiment of the present application includes: a chamber 101, a carrier 102 is arranged in the chamber 101, and the surface of the carrier 102 is used to place the wafer 10; a plurality of moving mechanisms 123, the moving mechanisms 123 are located on the carrier 102, two moving mechanisms 123 are arranged relatively along a first direction X, and two moving mechanisms 123 are arranged relatively along a second direction Y, the first direction X intersects with the second direction Y, and the plurality of moving mechanisms 123 surround a placement area 112, the placement area 112 is used to place the wafer 10, and each moving mechanism 123 can reciprocate along the direction of diffusion from the center of the placement area 112 to the surroundings; a plurality of photoelectric sensors 124, each At least one photoelectric sensor 124 is provided on the top surface of a moving mechanism 123, and the photoelectric sensor 124 is used to obtain the state of the wafer 10 in the placement area 112; a controller (not shown in the figure) is connected to the photoelectric sensor 124 and the moving mechanism 123. If the controller obtains that the wafer 10 is overlapped on the corresponding moving mechanism 123 through the photoelectric sensor 124, the moving mechanism 123 is controlled to move away from the center of the placement area 112, until the photoelectric sensor 124 can no longer obtain that the wafer 10 is overlapped on the corresponding moving mechanism 123, and then the moving mechanism 123 is controlled to move toward the center of the placement area 112.
[0038] In the deposition device provided by the embodiment of the present application, a stage 102 for placing a wafer 10 is provided in the chamber 101, and a plurality of moving mechanisms 123 are provided on the stage 102, two moving mechanisms 123 are arranged relatively along a first direction X, and two moving mechanisms 123 are arranged relatively along a second direction Y, and the first direction X intersects with the second direction Y, so that when the wafer 10 is overlapped on any moving mechanism 123, the corresponding moving mechanism 123 can move in a direction away from the center of the placement area 112, so that the wafer 10 falls to the surface of the stage 102. A photoelectric sensor 124 is also provided on the moving mechanism 123, and the photoelectric sensor 124 is used to obtain the state of the wafer 10 in the placement area 112. For example, when the wafer 10 is overlapped on a certain moving mechanism 123, the light of the corresponding photoelectric sensor 124 is blocked by the wafer 10, so that it can be determined on which moving mechanism 123 the wafer 10 is overlapped. The moving mechanism 123 and the photoelectric sensor 124 are both connected to the controller. If the controller obtains that the wafer 10 is overlapped on the corresponding moving mechanism 123 through the photoelectric sensor 124, the moving mechanism 123 is controlled to move away from the center of the placement area 112, until the photoelectric sensor 124 can no longer obtain that the wafer 10 is overlapped on the corresponding moving mechanism 123, and then the moving mechanism 123 is controlled to move toward the center of the placement area 112. In this way, automatic operation can be achieved through the controller. After the photoelectric sensor 124 determines the overlapping status of the wafer 10, the corresponding moving mechanism 123 is used to move away from the placement area 112 so that the wafer 10 falls back on the surface of the carrier 102, and the corresponding moving mechanism 123 is further controlled to move toward the center of the placement area 112 so that the wafer 10 is pushed back to a position aligned with the placement area 112. Through the deposition equipment provided in the embodiment of the present application, after the wafer 10 is placed on the carrier 102, it can be automatically determined whether the wafer 10 has completely fallen into the position corresponding to the placement area 112. If there is an overlapping problem with the wafer 10, resulting in the surface of the wafer 10 not being in complete contact with the surface of the carrier 102, the state of the wafer 10 can be adjusted through the corresponding moving mechanism 123 so that the wafer 10 can be exactly in the area corresponding to the placement area 112 and in complete contact with the surface of the carrier 102. In the subsequent deposition process, the wafer 10 can be heated evenly, which is beneficial to reduce the scrap rate of the wafer 10 and improve the reliability of the deposition equipment.
[0039] The deposition equipment may be a chemical vapor deposition equipment, a physical vapor deposition equipment, an atomic layer deposition equipment or a plasma chemical vapor deposition equipment, etc.
[0040] refer to Figure 1In some embodiments, the deposition device may include: a radio frequency (RF) power supply 108 and / or a remote plasma source (RPS) 109. The RF power supply 108 is used to provide an electric field required to form plasma. The remote plasma source 109 is used to convert the gas into a plasma state.
[0041] refer to Figure 1 In some embodiments, the deposition device may include: an air inlet 110, a ventilation panel 120 and an air outlet 130. The air inlet 110 is used to transport the reaction gas into the cavity 101. The ventilation panel 120 can divert the reaction gas so that the reaction gas is evenly dispersed. The air outlet 130 is used to discharge by-products and waste gas generated during the film deposition process in the cavity 101.
[0042] refer to Figure 1 In some embodiments, the deposition device may include: a ceramic kit 140 , the ceramic kit 140 is located on the inner wall of the cavity 101 , and the ceramic kit 140 is used to protect the cavity 101 .
[0043] exist Figure 2 In the embodiment, the angle between the first direction X and the second direction Y is 90°, which does not constitute a limitation on the angle between the first direction X and the second direction Y. In other embodiments, the angle between the first direction X and the second direction Y may also be 30°, 45° or 60°.
[0044] exist Figure 2 In the embodiment, the number of the mobile mechanisms 123 is 4 as an example, which does not constitute a limitation on the number of the mobile mechanisms 123. In other embodiments, the number of the mobile mechanisms 123 may also be 6, 8, or 11.
[0045] Figure 3 A schematic diagram of the cross-sectional structure of a carrier provided in an embodiment of the present application.
[0046] refer to Figure 3 In some embodiments, the surface of the moving mechanism 123 facing the placement area 112 may be an inclined surface. The inclined surface may help the moving mechanism 123 to smoothly drop the wafer 10 to the surface of the carrier 102 during the moving process.
[0047] In some embodiments, the angle between the inclined surface and the surface of the carrier 102 is 45° to 90°, for example, 45°, 50°, 66°, 70°, 80° or 85°, etc. The angle between the inclined surface and the surface of the carrier 102 is the inclination angle of the inclined surface relative to the surface of the carrier 102. If the inclination angle of the inclined surface relative to the surface of the carrier 102 is too small, it is easy to cause the wafer 10 to overlap on the inclined surface, and then the wafer 10 still cannot completely contact the surface of the carrier 102. Therefore, the inclination angle of the inclined surface relative to the carrier 102 needs to be greater than 45°; at the same time, the inclination angle of the inclined surface relative to the carrier 102 is less than 90°, which can make the slope of the inclined surface steeper, which is conducive to the wafer 10 sliding down the inclined surface.
[0048] refer to Figure 3 When the surface of the moving mechanism 123 facing the placement area 112 is an inclined surface, the photoelectric sensor 124 can be located on the inclined surface. In this way, the photoelectric sensor 124 can more accurately obtain whether the wafer 10 is overlapped on the inclined surface, so as to avoid the problem that the wafer 10 is overlapped on the inclined surface but still cannot fully contact the surface of the carrier 102.
[0049] Continue to refer Figure 3 In some embodiments, the emitted light of the photosensor 124 is fan-shaped (eg Figure 3 The fan-shaped portion is perpendicular to the inclined plane, and the other side of the fan-shaped portion is parallel to the inclined plane and faces the direction of the photoelectric sensor 124 away from the placement area 112. In this way, when the wafer 10 completely falls to contact the surface of the carrier 102, the photoelectric sensor 124 can avoid misjudging that the wafer 10 is in an overlapping state due to the side wall of the wafer 10 blocking the emitted light.
[0050] In some embodiments, the height of the photoelectric sensor 124 relative to the surface of the carrier 102 is greater than the thickness of the wafer 10. In this way, when the wafer 10 completely falls to contact the surface of the carrier 102, it can be further ensured that the photoelectric sensor 124 will not misjudge that the wafer 10 is in an overlapping state because the side wall of the wafer 10 blocks the emitted light.
[0051] Figure 4 A schematic diagram of the cross-sectional structure of another carrier provided in an embodiment of the present application.
[0052] refer to Figure 4In some embodiments, a plurality of lifting protrusions 122 are provided in the carrier 102, and the lifting protrusions 122 are located in the placement area 112. The controller is connected to the lifting protrusions 122. The controller controls the moving mechanism 123 to move away from the center direction of the placement area 112 while controlling the lifting protrusions 122 to rise to protrude from the surface of the carrier 102; the controller controls the moving mechanism 123 to move toward the center direction of the placement area 112 while controlling the lifting protrusions 122 to fall below the surface of the carrier 102. In this way, when the controller controls the moving mechanism 123 to move away from the center of the placement area 112, the lifting protrusion 122 can increase the friction between the wafer 10 and the surface of the carrier 102, thereby avoiding the problem that the friction between the wafer 10 and the moving mechanism 123 is too large, resulting in the wafer 10 being unable to fall back to the surface of the carrier 102; when the wafer 10 falls and contacts the surface of the carrier 102, the lifting protrusion 122 falls below the surface of the carrier 102 to avoid the lifting protrusion 122 hindering the movement of the wafer 10 when the wafer 10 is pushed back by the moving mechanism 123.
[0053] refer to Figure 4 When a plurality of lifting protrusions 122 are arranged in the carrier 102, when the controller controls the moving mechanism 123 to move away from the center of the placement area 112, some of the lifting protrusions 122 located in the placement area 112 close to the moving moving mechanism 123 are lifted, and another part of the lifting protrusions 122 located in the placement area 112 away from the moving moving mechanism 123 are kept in the falling state. In this way, it is helpful to prevent the wafer 10 from moving along with the moving moving mechanism 123, which causes the wafer 10 to be unable to fall back to the surface of the carrier 102.
[0054] In some embodiments, the material of the lifting protrusion 122 includes high temperature resistant materials such as quartz, aluminum nitride, silicon nitride or silicon oxide. Since the carrier 102 needs to heat the wafer 10, the lifting protrusion 122 is made of high temperature material to avoid the lifting protrusion 122 reacting with the wafer 10 or deforming after being heated, thereby improving the stability of the deposition equipment.
[0055] In some embodiments, a pressure sensor (not shown) is disposed on the bottom of the moving mechanism 123 facing the placement area 112. This can avoid the problem of excessive force on the wafer 10 causing damage to the wafer 10 when the moving mechanism 123 moves toward the center of the placement area 112.
[0056] In the deposition device provided by the embodiment of the present application, a stage 102 for placing a wafer 10 is provided in the chamber 101, and a plurality of moving mechanisms 123 are provided on the stage 102, two moving mechanisms 123 are arranged relatively along a first direction X, and two moving mechanisms 123 are arranged relatively along a second direction Y, and the first direction X intersects with the second direction Y, so that when the wafer 10 is overlapped on any moving mechanism 123, the corresponding moving mechanism 123 can move in a direction away from the center of the placement area 112, so that the wafer 10 falls to the surface of the stage 102. A photoelectric sensor 124 is also provided on the moving mechanism 123, and the photoelectric sensor 124 is used to obtain the state of the wafer 10 in the placement area 112. For example, when the wafer 10 is overlapped on a certain moving mechanism 123, the light of the corresponding photoelectric sensor 124 is blocked by the wafer 10, so that it can be determined on which moving mechanism 123 the wafer 10 is overlapped. The moving mechanism 123 and the photoelectric sensor 124 are both connected to the controller. If the controller obtains that the wafer 10 is overlapped on the corresponding moving mechanism 123 through the photoelectric sensor 124, the moving mechanism 123 is controlled to move away from the center of the placement area 112, until the photoelectric sensor 124 can no longer obtain that the wafer 10 is overlapped on the corresponding moving mechanism 123, and then the moving mechanism 123 is controlled to move toward the center of the placement area 112. In this way, automatic operation can be achieved through the controller. After the photoelectric sensor 124 determines the overlapping status of the wafer 10, the corresponding moving mechanism 123 is used to move away from the placement area 112 so that the wafer 10 falls back on the surface of the carrier 102, and the corresponding moving mechanism 123 is further controlled to move toward the center of the placement area 112 so that the wafer 10 is pushed back to a position aligned with the placement area 112. Through the deposition equipment provided in the embodiment of the present application, after the wafer 10 is placed on the carrier 102, it can be automatically determined whether the wafer 10 has completely fallen into the position corresponding to the placement area 112. If there is an overlapping problem with the wafer 10, resulting in the surface of the wafer 10 not being in complete contact with the surface of the carrier 102, the state of the wafer 10 can be adjusted through the corresponding moving mechanism 123 so that the wafer 10 can be exactly in the area corresponding to the placement area 112 and in complete contact with the surface of the carrier 102. In the subsequent deposition process, the wafer 10 can be heated evenly, which is beneficial to reduce the scrap rate of the wafer 10 and improve the reliability of the deposition equipment.
[0057] Those skilled in the art will appreciate that the above-mentioned embodiments are specific examples for implementing the present application, and in practical applications, various changes may be made to the embodiments in form and detail without departing from the spirit and scope of the present application. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present application, and therefore the scope of protection of the present application shall be subject to the scope defined in the claims.
Claims
1. A deposition device, characterized in that: include: A cavity, wherein a carrier is disposed in the cavity, and a surface of the carrier is used for placing a wafer; A plurality of moving mechanisms, the moving mechanisms are located on the stage, two of the moving mechanisms are arranged opposite to each other along a first direction, two of the moving mechanisms are arranged opposite to each other along a second direction, the first direction intersects with the second direction, the plurality of moving mechanisms enclose a placement area, the placement area is used to place the wafer, and each of the moving mechanisms can reciprocate in a direction spreading from the center of the placement area to the surrounding areas; A plurality of photoelectric sensors, at least one of which is disposed on the top surface of each of the moving mechanisms, and the photoelectric sensor is used to obtain the state of the wafer in the placement area; A controller is connected to the photoelectric sensor and the moving mechanism. If the controller obtains that the wafer is overlapped on the corresponding moving mechanism through the photoelectric sensor, the controller controls the moving mechanism to move away from the center of the placement area until the photoelectric sensor can no longer obtain that the wafer is overlapped on the corresponding moving mechanism, and then controls the moving mechanism to move toward the center of the placement area.
2. The deposition device according to claim 1, characterized in that: The surface of the moving mechanism facing the placement area is an inclined surface.
3. The deposition device according to claim 2, characterized in that: The angle between the inclined surface and the carrier surface is 45° to 90°.
4. The deposition device according to claim 2, characterized in that: The photoelectric sensor is located on the inclined surface.
5. The deposition device according to claim 4, characterized in that: The emitted light of the photoelectric sensor is fan-shaped, one side of the fan-shaped is perpendicular to the inclined plane, and the other side of the fan-shaped is parallel to the inclined plane and faces the direction of the photoelectric sensor away from the placement area.
6. The deposition device according to claim 2, characterized in that: The height of the photoelectric sensor relative to the surface of the stage is greater than the thickness of the wafer.
7. The deposition device according to claim 1, characterized in that: A plurality of lifting protrusions are provided in the carrier, and the lifting protrusions are located in the placement area. The controller is connected to the lifting protrusions, and the controller controls the moving mechanism to move away from the center of the placement area while controlling the lifting protrusions to rise to protrude from the surface of the carrier; the controller controls the moving mechanism to move toward the center of the placement area while controlling the lifting protrusions to fall below the surface of the carrier.
8. The deposition device according to claim 7, characterized in that: When the controller controls the moving mechanism to move away from the center of the placement area, a part of the lifting protrusion located in the placement area close to the moving moving mechanism side rises, and another part of the lifting protrusion located in the placement area away from the moving moving mechanism side remains in a falling state.
9. The deposition device according to claim 7, characterized in that: The material of the lifting protrusion includes quartz, aluminum nitride, silicon nitride or silicon oxide.
10. The deposition device according to claim 1, characterized in that A pressure sensor is arranged on the surface of the bottom of the moving mechanism facing the placement area.