A method for physically vapor depositing a highly corrosion-resistant film on a plastic substrate

Abstract

The present invention provides a method for physically vapor depositing a high corrosion-resistant film on a plastic substrate, comprising the following steps: S1, cleaning the surface of the plastic substrate; S2, performing PVD chrome plating on the cleaned surface; S3, performing oxygen ion etching on the surface of S2; S4, performing PVD chrome plating on the surface of S3; S5, performing oxygen ion etching on the surface of S4; S6, performing PVD chrome plating on the surface of S5.

Description

Technical Field

[0001] The invention relates to the technical field of physical vapor vacuum coating, and in particular to a PVD high corrosion-resistant film process on a plastic substrate. Background Art

[0002] In the kitchen and bathroom, auto parts and home appliance industries, in order to obtain excellent corrosion resistance on plastic-based nickel wire drawing products, chromium electroplating is usually used to improve the corrosion resistance of the products. The basic process is: copper-nickel electroplating → wire drawing → electroplating hanging → electroplating hexavalent chromium → PVD hanging → PVD cleaning → PVD decorative coating. This process is costly in the water electroplating process, and the chromium electroplating process involves the discharge of heavy metals such as hexavalent chromium, which increases the cost of wastewater treatment and affects the environment and human health.

[0003] In recent years, due to the tightening of environmental protection policies, surface treatment processes that replace traditional electroplating processes have become a hot topic in technical research. At present, there is a process in the industry for high corrosion-resistant films on metal substrates: metal substrate → electroplating copper → electroplating nickel → wire drawing → PVD chromium → PVD decorative coating. This process can achieve anti-corrosion effects on metal nickel wire drawing products, but the process requires long-term PVD coating, which will generate high temperatures and cannot be applied to plastic substrates. At present, there is still a lack of technology for using PVD on plastic substrates to achieve high corrosion-resistant film anti-corrosion. Summary of the invention

[0004] The present invention provides a method for improving the problem that the existing electroplating process requires a long time for PVD coating, generates high temperature, and is not applicable to plastic substrates.

[0005] To achieve the above object, the present invention adopts the following technical solution: A method for physically vapor depositing a high corrosion-resistant film on a plastic substrate, characterized in that it comprises the following steps:

[0006] (a) Clean the product with a plasma beam: First, clean the stains on the surface of the plastic substrate product, then evacuate the PVD equipment. When the vacuum degree reaches 7*10 -3 After that, use argon plasma to remove dust from the surface of plastic substrate products;

[0007] (b) Plating a Cr layer on a plastic substrate by physical vapor deposition: The vacuum degree of the PVD equipment is reduced to 7*10 -3 In the following, the Ar gas flow rate is 50-100 sccm, the bias voltage applied to the plastic substrate product is a synchronous pulse bias voltage, and the power supply on the chromium target of the PVD equipment is a high-power pulse magnetron sputtering power supply;

[0008] (c) Etching by oxygen ions: The vacuum degree of the PVD equipment is reduced to 7*10 -3Next, oxygen ion etching is performed using an oxygen gas flow rate of 40-60 sccm;

[0009] (d) After completing step (c), the plastic substrate is plated with a Cr layer by physical vapor deposition: the vacuum degree of the PVD equipment is reduced to 7*10 -3 In the following, the Ar gas flow rate is 50-100 sccm, the bias voltage applied to the plastic substrate product is a synchronous pulse bias voltage, and the power supply on the chromium target of the PVD equipment is a high-power pulse magnetron sputtering power supply;

[0010] (e) After completing step (d), etch with oxygen ions: Pump the vacuum of the PVD equipment to 7*10 -3 Next, oxygen ion etching is performed using an oxygen gas flow rate of 40-60 sccm;

[0011] (f) After completing step (e), the plastic substrate is plated with a Cr layer by physical vapor deposition: the PVD equipment is evacuated, and a bias voltage is applied to the plastic substrate product, wherein the bias voltage is a synchronous pulse bias voltage. The power source on the chromium target of the PVD equipment is a high-power pulse magnetron sputtering power source.

[0012] Preferably, the bias voltage applied to the plastic substrate product in step (b) is a synchronous pulse bias voltage with a voltage value of 50-120V and a bias duty cycle of 5-10%; the power pulse magnetron sputtering power supply current is 5-10A, the power is 3-6KW, the duty cycle is 5-10%, and the duration t is 15-20min.

[0013] Preferably, when oxygen ion etching is performed in step (c), the etching method used is to ion gun emit ion beam to perform etching, the bias voltage applied to the product is 100 V, and the etching time t is 30-60 min.

[0014] Preferably, the bias voltage applied to the plastic substrate product in step (d) is a synchronous pulse bias voltage with a voltage value of 50-120V and a bias duty cycle of 5-10%; the power pulse magnetron sputtering power supply current is 5-10A, the power is 3-6KW, the duty cycle is 5-10%, and the duration t is 15-20min.

[0015] Preferably, when oxygen ion etching is performed in step (e), the etching method used is to ion gun emit ion beam to perform etching, the bias voltage applied to the product is 100V, and the etching time t is 30-60min.

[0016] Preferably, the bias voltage applied to the plastic substrate product in step (f) is a synchronous pulse bias voltage with a voltage value of 50-120V and a bias duty cycle of 5-10%; the power pulse magnetron sputtering power supply current is 5-10A, the power is 3-6KW, the duty cycle is 5-10%, and the duration t is 15-20min.

[0017] Compared with the prior art, the significant advantages of the present invention are: by adopting the method of physical vapor deposition of high corrosion-resistant film on the rubber substrate described in the present invention, the nickel wire drawing product can meet the functional requirements of the current mainstream process after completing the PVD high corrosion-resistant film layer. Compared with the existing process, the steps of the present invention are simpler, and the cumbersome electroplating of hexavalent chromium and transfer links are eliminated, thereby reducing the cost of the process, reducing the emission of heavy metals such as hexavalent chromium, being more environmentally friendly, reducing the cost of wastewater treatment, and having good corrosion resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solution of the present invention, the drawings required for use in the implementation mode will be briefly introduced below. Obviously, the drawings described below are only some implementation modes of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 It is a schematic diagram of a process for forming a PVD high corrosion-resistant film on a plastic substrate provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0022] See also Figure 1 The embodiment of the present invention provides a PVD high corrosion-resistant film process on a plastic substrate, which enables nickel wire drawing products to functionally meet the requirements of current electroplated chromium products, and includes:

[0023] S1, cleaning the surface of the PVD product. The cleaning process includes cleaning the stains on the surface of the PVD product before use, and also includes pumping the vacuum degree to 7*10 after entering the PVD equipment. -3 After that, argon plasma is used to remove dust from the product surface.

[0024] S2, after the product enters the vacuum chamber, the vacuum degree of the PVD equipment needs to be pumped to 7*10 -3In the following, the Ar gas flow rate used in step S2 is 50sccm, the bias voltage applied to the product is a synchronous pulse bias, the voltage is 50V, and the bias duty cycle is 5%; the power applied to the chromium target in step S2 is a HiPI MS power supply, the current is 5A, the power is 3KW, the duty cycle is 5%, and the process duration t is 15min

[0025] S3, complete S2, before S3, the vacuum degree of PVD equipment needs to be pumped to 7*10 -3 In the following, the oxygen gas flow rate used in step S3 is 40 sccm. When performing oxygen ion etching, the etching method used is to ion gun emit ion beam for etching. The bias voltage applied to the product is 100V (12W), and the time t is 30min.

[0026] S4, after completing S3, the vacuum degree of the PVD equipment needs to be pumped down to 7*10 -3 In the following, the Ar gas flow rate used in step S4 is 50sccm, the bias voltage applied to the product is a synchronous pulse bias, the voltage is 50V, and the bias duty cycle is 5%; the power applied to the chromium target in step S6 is a HiPI MS power supply, the current is 5A, the power is 3KW, the duty cycle is 5%, and the process duration t is 15min

[0027] S5, complete S4, before S5, the vacuum degree of PVD equipment needs to be pumped to 7*10 -3 In the following, the oxygen gas flow rate used in step S5 is 40 sccm. When performing oxygen ion etching, the etching method used is to ion gun emit ion beam for etching. The bias voltage applied to the product is 100V (12W), and the time t is 30min.

[0028] S6, after completing S5, the vacuum degree of the PVD equipment needs to be pumped to 7*10 -3 Below, the S6 step uses an Ar gas flow rate of 50sccm, and the bias applied to the product is a synchronous pulse bias with a voltage of 50V and a bias duty cycle of 5%; the power applied to the chromium target in the S6 step is a HiPIMS power supply (high-power pulsed magnetron sputtering power supply) with a current of 5A, a power of 3KW, a duty cycle of 5%, and a process duration t of 15min.

[0029] In this embodiment, after the PVD process is completed, the surface of the final product may be subjected to functional tests, for example, corrosion resistance, hot and cold cycle tests, water immersion tests, etc., as shown in Table 1.

[0030] Table 1 Product performance test after PVD zero-valent chromium treatment

[0031]

[0032] The above is a preferred embodiment of the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A method for physically vapor depositing a highly corrosion-resistant film on a plastic substrate, characterized in that: The steps include: (a) Clean the product with a plasma beam: First, clean the stains on the surface of the plastic substrate product, then evacuate the PVD equipment. When the vacuum degree reaches 7*10 -3 After that, use argon plasma to remove dust from the surface of plastic substrate products; (b) Plating a Cr layer on a plastic substrate by physical vapor deposition: The vacuum degree of the PVD equipment is reduced to 7*10 -3 In the following, the Ar gas flow rate is 50-100 sccm, the bias voltage applied to the plastic substrate product is a synchronous pulse bias voltage, and the power supply on the chromium target of the PVD equipment is a high-power pulse magnetron sputtering power supply; (c) Etching by oxygen ions: The vacuum degree of the PVD equipment is reduced to 7*10 -3 Next, oxygen ion etching is performed using an oxygen gas flow rate of 40-60 sccm; (d) After completing step (c), the plastic substrate is plated with a Cr layer by physical vapor deposition: the vacuum degree of the PVD equipment is reduced to 7*10 -3 In the following, the Ar gas flow rate is 50-100 sccm, the bias voltage applied to the plastic substrate product is a synchronous pulse bias voltage, and the power supply on the chromium target of the PVD equipment is a high-power pulse magnetron sputtering power supply; (e) After completing step (d), etch with oxygen ions: Pump the vacuum of the PVD equipment to 7*10 -3 Next, oxygen ion etching is performed using an oxygen gas flow rate of 40-60 sccm; (f) After completing step (e), the plastic substrate is plated with a Cr layer by physical vapor deposition: the PVD equipment is evacuated, and a bias voltage is applied to the plastic substrate product, wherein the bias voltage is a synchronous pulse bias voltage. The power source on the chromium target of the PVD equipment is a high-power pulse magnetron sputtering power source.

2. The method for physically vapor depositing a highly corrosion-resistant film on a plastic substrate according to claim 1, characterized in that: In step (b), the bias voltage applied to the plastic substrate product is a synchronous pulse bias voltage with a voltage value of 50-120V and a bias duty cycle of 5-10%; the power pulse magnetron sputtering power supply current is 5-10A, the power is 3-6KW, the duty cycle is 5-10%, and the duration t is 15-20min.

3. The method for physically vapor depositing a highly corrosion-resistant film on a plastic substrate according to claim 1, characterized in that: When oxygen ion etching is performed in step (c), the etching method used is to ion gun emit ion beam for etching, the bias voltage applied to the product is 100V, and the etching time t is 30-60min.

4. The method for physically vapor depositing a highly corrosion-resistant film on a plastic substrate according to claim 1, characterized in that: In step (d), the bias voltage applied to the plastic substrate product is a synchronous pulse bias voltage with a voltage value of 50-120V and a bias duty cycle of 5-10%; the power pulse magnetron sputtering power supply current is 5-10A, the power is 3-6KW, the duty cycle is 5-10%, and the duration t is 15-20min.

5. The method for physically vapor depositing a highly corrosion-resistant film on a plastic substrate according to claim 1, characterized in that: When oxygen ion etching is performed in step (e), the etching method used is to ion gun emit ion beam for etching, the bias voltage applied to the product is 100V, and the etching time t is 30-60min.

6. The method for physically vapor depositing a highly corrosion-resistant film on a plastic substrate according to claim 1, characterized in that: In step (f), the bias voltage applied to the plastic substrate product is a synchronous pulse bias voltage with a voltage value of 50-120V and a bias duty cycle of 5-10%; the power pulse magnetron sputtering power supply current is 5-10A, the power is 3-6KW, the duty cycle is 5-10%, and the duration t is 15-20min.

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