Lower electrode DAM structure
By setting special shape lines at intervals on the glass of the lower electrode DAM, the problems of helium leakage and glass fragmentation in the prior art are solved, and the safety and helium sealing balance are achieved when replacing the glass.
Patent Information
- Application Number
- CN202411942706.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2025-04-01
AI Technical Summary
When the existing lower electrode DAM structure improves helium sealing, it leads to the problem of glass fragmentation when changing glass, and it is difficult to balance the helium leakage control.
Special shapes of patterns are arranged at the surface of the glass of the lower electrode DAM, including fish scale single-sloped and ‘X’ cross-shaped patterns. By adjusting the width, depth and spacing of the patterns, ensure that helium is not seriously leaked and the glass is avoided.
While ensuring that helium is not seriously leaked, it solves the problem of glass shattering during glass replacement, and improves the stability and replacement safety of the glass substrate.
Smart Images
Figure CN119742215A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of vacuum cavity internal etching process, and specifically discloses a lower electrode DAM structure. Background Art
[0002] The lower electrode is also called an electrostatic chuck. Its main function is to fix and adsorb the glass substrate and cool the back of the glass substrate. The DAM (Direct Attached Material) component of the lower electrode is the outermost circle of contact between the lower electrode and the glass. Its function is to fix and adsorb the glass substrate through its low roughness surface (partially required to be less than 0.6μm) to prevent the leakage of the internal temperature-averaging cooling gas helium, thereby maintaining the stability of the plasma etching environment in the vacuum chamber.
[0003] With the development of vacuum chambers, production capacity continues to increase, and the industry has higher and higher requirements for etching rate and cooling effect, resulting in the design of the lower electrode undergoing a transformation from FLAT TYPE to EMBOSS TAPE. This transformation makes the space between the glass and the electrode larger, and the adsorption force needs to be correspondingly enhanced to ensure the stable adsorption of the glass substrate. The uniform temperature cooling gas flow rate continues to increase. The original DAM roughness is too low and the sealing is too good. Although it can effectively prevent gas leakage, it causes ESD anomalies. ESD anomalies refer to the abnormality that the glass cannot rise due to air pressure after the static electricity is released when the glass rises. This leads to the problem of glass breakage when the glass is replaced after the glass etching is completed.
[0004] Although helium leakage will affect the direction of the etching plasma movement inside the vacuum chamber, thereby affecting the etching uniformity of the entire glass. But in fact, each electrode will have a small amount of helium leakage. Controlling the helium leakage to a certain amount can balance the ESD anomaly. Therefore, the industry has tried to solve this problem by increasing the DAM roughness of the lower electrode, but since 2.0μm is the current limit of all lower electrode DAM roughness, helium will leak seriously if it is larger, and even a roughness of 2.0μm still cannot solve the problem of glass shattering when replacing glass.
[0005] In summary, a new technical solution is urgently needed to resolve the contradiction between preventing serious gas leakage and preventing glass shattering, and to solve the problem of glass shattering when replacing glass after glass etching is completed. Summary of the invention
[0006] In order to solve the above technical problems, the present invention aims to provide a lower electrode DAM structure, which adopts the inventive concept of arranging special-shaped patterns at intervals on the surface of the DAM facing the glass substrate, thereby ensuring that helium will not leak seriously and solving the problem of glass breakage when replacing glass.
[0007] The present invention provides a lower electrode DAM structure, wherein the DAM is arranged around the periphery of the lower electrode surface, the DAM is used to fix and adsorb a glass substrate, and the surface of the DAM facing the glass substrate is provided with textures at intervals, the textures extend from the inner edge to the outer edge of the DAM surface, and the textures are composed of grooves and protrusions on the DAM surface.
[0008] As a further improvement of the present invention, the lines are in the shape of fish scales and single oblique lines, and the lines are arranged at even intervals and are not connected to each other.
[0009] As a further improvement of the present invention, the lines are in an "X"-shaped cross shape, the lines are arranged at even intervals, and the crossed lines are interconnected.
[0010] As a further improvement of the present invention, the height of the DAM is 67-75 μm, the roughness of the DAM is 1.7-2.0 μm, the width of the DAM is 7 mm, the bending radius of the texture is 12.96 mm, the width of the texture is 1-3 mm, and the depth of the texture is 3-8 μm.
[0011] As a further improvement of the present invention, the interval between the lines is 1 to 3 mm.
[0012] Compared with the prior art, the present invention has the following beneficial effects:
[0013] The present invention provides a lower electrode DAM structure, which solves the problem of glass breakage when replacing glass while ensuring that helium will not leak seriously by arranging special-shaped patterns at intervals on the surface of the DAM facing the glass substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 A schematic diagram of the fish scale-shaped single oblique line bottom electrode DAM structure provided by the present invention;
[0015] Figure 2 This is a schematic diagram of the "X"-shaped cross-type lower electrode DAM structure provided by the present invention. DETAILED DESCRIPTION
[0016] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.
[0017] An embodiment of the present invention provides a lower electrode DAM structure, wherein the DAM is arranged around the periphery of the lower electrode surface, the DAM is used to fix and adsorb a glass substrate, and the surface of the DAM facing the glass substrate is provided with textures at intervals, the textures extend from the inner edge to the outer edge of the DAM surface, and the textures are composed of grooves and protrusions on the DAM surface.
[0018] Preferably, if Figure 1 As shown, the lines are in the shape of fish scales and single oblique lines, and the lines are arranged at even intervals and are not connected to each other.
[0019] Preferably, if Figure 2 As shown, the lines are in an "X"-shaped cross shape, the lines are arranged at even intervals, and the crossed lines are interconnected.
[0020] Preferably, the height of the DAM is 67-75 μm, the roughness of the DAM is 1.7-2.0 μm, the width of the DAM is 7 mm, the bending radius of the texture is 12.96 mm, the width of the texture is 1-3 mm, and the depth of the texture is 3-8 μm.
[0021] Preferably, the interval between the lines is 1 to 3 mm.
[0022] The spacing, width and depth of the lines have a great influence on the effect of preventing helium leakage after the DAM carries the glass. The present invention prevents serious helium leakage by strictly controlling the width and depth of the lines within the range.
[0023] It should be noted that the patterns described in the present invention can also be exemplarily understood as patterns and channels with square, circular or other shaped cross-sections. Based on the embodiments of the present invention, all patterns and channels obtained by ordinary technicians in this field without making any creative work are within the scope of protection of the present invention.
[0024] The present invention provides specific embodiments as follows:
[0025] Example 1
[0026] like Figure 1 As shown, the present invention provides a lower electrode DAM structure, wherein the DAM is arranged around the periphery of the lower electrode surface, the DAM is used to fix and adsorb the glass substrate, and the surface of the DAM facing the glass substrate is provided with textures at intervals, the textures extend from the inner edge to the outer edge of the DAM surface, and the textures are composed of grooves and protrusions on the DAM surface.
[0027] The lines are in the shape of fish scales and single oblique lines, and the lines are arranged at even intervals and are not interconnected.
[0028] The height of the DAM is 69-70 μm, the roughness of the DAM is 1.724-1.906 μm, the width of the DAM is 7 mm, the bending radius of the texture is 12.96 mm, the width of the texture is 1 mm, and the depth of the texture is 3 μm.
[0029] The interval between the lines is 3 mm.
[0030] The test shows that the sealing performance of this embodiment is good, and there is no problem of glass breakage when replacing the glass during use.
[0031] Example 2
[0032] like Figure 2 As shown, the present invention provides a lower electrode DAM structure, wherein the DAM is arranged around the periphery of the lower electrode surface, the DAM is used to fix and adsorb the glass substrate, and the surface of the DAM facing the glass substrate is provided with textures at intervals, the textures extend from the inner edge to the outer edge of the DAM surface, and the textures are composed of grooves and protrusions on the DAM surface.
[0033] The lines are in an "X"-shaped cross shape, the lines are arranged at even intervals, and the crossed lines are interconnected.
[0034] The height of the DAM is 72-73 μm, the roughness of the DAM is 1.809-1.923 μm, the width of the DAM is 7 mm, the bending radius of the texture is 12.96 mm, the width of the texture is 2 mm, and the depth of the texture is 5 μm.
[0035] The interval between the lines is 2 mm.
[0036] The test shows that the sealing performance of this embodiment is good, and there is no problem of glass breakage when replacing the glass during use.
[0037] Example 3
[0038] like Figure 2 As shown, the present invention provides a lower electrode DAM structure, wherein the DAM is arranged around the periphery of the lower electrode surface, the DAM is used to fix and adsorb the glass substrate, and the surface of the DAM facing the glass substrate is provided with textures at intervals, the textures extend from the inner edge to the outer edge of the DAM surface, and the textures are composed of grooves and protrusions on the DAM surface.
[0039] The lines are in an "X"-shaped cross shape, the lines are arranged at even intervals, and the crossed lines are interconnected.
[0040] The height of the DAM is 67-75 μm, the roughness of the DAM is 1.835-1.973 μm, the width of the DAM is 7 mm, the bending radius of the texture is 12.96 mm, the width of the texture is 3 mm, and the depth of the texture is 8 μm.
[0041] The interval between the lines is 1 mm.
[0042] The test shows that the sealing performance of this embodiment is good, and there is no problem of glass breakage when replacing the glass during use.
[0043] The present invention provides a lower electrode DAM structure, which solves the problem of glass breakage when replacing glass while ensuring that helium will not leak seriously by arranging special-shaped patterns at intervals on the surface of the DAM facing the glass substrate.
Claims
1. A lower electrode DAM structure, characterized in that: The DAM is arranged around the periphery of the lower electrode surface, and is used to fix and adsorb the glass substrate. The surface of the DAM facing the glass substrate is provided with textures at intervals, and the textures extend from the inner edge to the outer edge of the DAM surface, and the textures are composed of grooves and protrusions on the DAM surface.
2. The bottom electrode DAM structure according to claim 1, characterized in that: The lines are in the shape of fish scales and single oblique lines, and the lines are arranged at even intervals and are not interconnected.
3. The bottom electrode DAM structure according to claim 1, characterized in that: The lines are in an "X"-shaped cross shape, the lines are arranged at even intervals, and the crossed lines are interconnected.
4. The bottom electrode DAM structure according to claim 1, characterized in that: The height of the DAM is 67-75 μm, the roughness of the DAM is 1.7-2.0 μm, the width of the DAM is 7 mm, the bending radius of the texture is 12.96 mm, the width of the texture is 1-3 mm, and the depth of the texture is 3-8 μm.
5. The bottom electrode DAM structure according to claim 1, characterized in that: The intervals between the lines are 1 to 3 mm.