Semiconductor film etching method and etching device

Abstract

The invention discloses an etching method and an etching device for a semiconductor film, and belongs to the technical field of semiconductors, and the etching method for the semiconductor film comprises the following steps: collecting thickness uniformity data of a plurality of etched semiconductor films and position data of magnets; obtaining the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet; and when the semiconductor thin film is etched, monitoring thickness uniformity data of the semiconductor thin film in an etched area, and when the thickness uniformity data of the semiconductor thin film in the etched area exceeds a threshold value, determining the position data of the magnet according to the relationship between the thickness uniformity data of the etched semiconductor thin film and the position data of the magnet. And adjusting the position of the magnet. According to the etching method and the etching device for the semiconductor film, the product quality and the productivity can be improved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to an etching method and an etching device for a semiconductor film. Background Art

[0002] In the semiconductor manufacturing process, the semiconductor film needs to be etched. The uniformity of the semiconductor film thickness in the etched area is a very important parameter. If the semiconductor film is a gate oxide layer, the uniformity of the semiconductor film thickness will affect the withstand voltage of the semiconductor device. If the semiconductor film is used as a sacrificial oxide layer during ion implantation, the uniformity of the semiconductor film thickness will affect the effect of ion implantation and whether the barrier effect can be achieved.

[0003] Therefore, the semiconductor film in the etched area needs to be monitored in real time. However, when the uniformity of the etched semiconductor film exceeds the threshold, the etching device will be re-maintained, resulting in line shutdown, affecting product quality and production capacity. Summary of the invention

[0004] The object of the present invention is to provide a semiconductor film etching method, which can solve the problem that the uniformity of the etched semiconductor film exceeds a threshold value and affects product quality and production capacity.

[0005] In order to solve the above technical problems, the present invention is achieved through the following technical solutions: The present invention provides a method for etching a semiconductor film, comprising the following steps: Collecting thickness uniformity data of a plurality of etched semiconductor films and position data of a magnet; Acquiring the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet; and When the semiconductor film is being etched, the thickness uniformity data of the semiconductor film in the etched area is monitored. When the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold, the position of the magnet is adjusted according to the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet.

[0006] In one embodiment of the present invention, when collecting thickness uniformity data of multiple etched semiconductor films and position data of magnets, the position of one magnet is changed, and the positions of other magnets are kept unchanged, and the thickness uniformity data of the semiconductor film is obtained at each test position.

[0007] In one embodiment of the present invention, obtaining thickness uniformity data of the semiconductor film at each test position includes the following steps: Setting a plurality of detection positions in the etched region of the semiconductor film, and obtaining the thickness of the semiconductor film at each of the detection positions; and The thickness uniformity data of the semiconductor film is obtained according to the thickness of the semiconductor film at the plurality of detection positions.

[0008] In one embodiment of the present invention, when obtaining the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet, a relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnet is first established.

[0009] In one embodiment of the present invention, the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet.

[0010] In one embodiment of the present invention, the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet.

[0011] In one embodiment of the present invention, the relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet is: Among them, Z is the target thickness uniformity of the semiconductor film, β0 is the actual thickness uniformity of the semiconductor film, βi is the influence coefficient of the first magnet position on the thickness uniformity of the semiconductor film, βj is the influence coefficient of the second magnet position on the thickness uniformity of the semiconductor film, βij is the cross-influence coefficient of the first magnet position and the second magnet position on the thickness uniformity of the semiconductor film, x1i is the i-th position data of the first magnet, x2j is the j-th position data of the second magnet, k1 is the number of test positions of the first magnet; k2 is the number of test positions of the second magnet; a is a constant.

[0012] In one embodiment of the present invention, when the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold value, adjusting the position of the magnet according to the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet includes the following steps: Monitoring thickness uniformity data of the semiconductor film in the etched area; Determine whether the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold value, and when the thickness uniformity data of the semiconductor film in the etched area does not exceed the threshold value, monitor the thickness uniformity data of the semiconductor film in the etched area in real time until the etching process ends; When the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold value, adjusting the position of the magnet, and determining whether the thickness uniformity data of the semiconductor film in the etched area returns to within the threshold value after adjusting the position of the magnet; If the thickness uniformity data of the semiconductor film in the etched area returns to within the threshold, the etching is continued, and the thickness uniformity data of the semiconductor film in the etched area is monitored in real time until the etching process is completed; If the thickness uniformity data of the semiconductor film in the etched area still exceeds the threshold, the etching device is maintained.

[0013] In one embodiment of the present invention, when the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, adjusting the position of the magnet includes the following steps: Obtaining thickness uniformity that needs to be adjusted according to target thickness uniformity and actual thickness uniformity; and In the contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, find the area corresponding to the thickness uniformity that needs to be adjusted, and find the target position data closest to the current magnet position in the area, and adjust the magnet to the position where the target position data is located.

[0014] The present invention also provides a semiconductor thin film etching device, the semiconductor thin film etching device comprising: Chamber; A base is arranged in the chamber, and the semiconductor film to be etched is placed on the base; A first magnet is disposed on one side of the top of the chamber; A second magnet is disposed on one side of the bottom of the chamber; and An advanced process control system comprises a memory, a processor and a program stored in the memory and executable on the processor, wherein the processor executes a method for etching a semiconductor film as described in any one of the above.

[0015] In summary, the present invention provides a semiconductor film etching method and etching device, the unexpected effect is: first, based on the thickness uniformity data of multiple etched semiconductor films and the position data of the magnet, a relationship table of the thickness uniformity data of the semiconductor film and the position data of the magnet is established, and based on the relationship table of the thickness uniformity data of the semiconductor film and the position data of the magnet, a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet or a relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet is obtained as the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet. The relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is introduced into the advanced process control system of the etching device. When the etching device is used to etch the semiconductor film, when the thickness uniformity data of the semiconductor film in the etched area exceeds the threshold, the etching device can adjust the position of the magnet according to the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet, so that the uniformity data of the semiconductor film returns to the threshold. Then, the thickness uniformity of the semiconductor film is automatically adjusted, avoiding the need for frequent maintenance of the etching device, thereby avoiding line breakage. Improve product quality while increasing productivity.

[0016] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for describing the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0018] Figure 1 Schematic diagram of the structure of an etching device in one embodiment.

[0019] Figure 2 FIG. 4 is a flow chart of a method for etching a semiconductor film in one embodiment.

[0020] Figure 3 FIG. 1 is a flow chart of obtaining thickness uniformity data of a semiconductor film in one embodiment.

[0021] Figure 4 1 is a contour plot of thickness uniformity data of a semiconductor film and position data of a magnet in an embodiment.

[0022] Figure 5 FIG. 1 is a flow chart of magnet adjustment during semiconductor film etching in one embodiment.

[0023] Figure 6 The flowchart of adjusting the thickness uniformity of the semiconductor film using the thickness uniformity data of the semiconductor film and the contour map of the position data of the magnet in one embodiment is shown.

[0024] Figure 7 It is a schematic diagram of the structure of an advanced process control system in one embodiment.

[0025] Description of labels: 100. Chamber; 101. Base; 102. Semiconductor film to be etched; 103. Air inlet; 104. First magnet; 105. Second magnet; 106. Advanced process control system; 1061. Processor; 1062. Memory. DETAILED DESCRIPTION

[0026] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0027] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0028] In the present invention, it should be noted that, if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, if the terms "first" and "second" appear, they are only used for description and distinction purposes, and cannot be understood as indicating or implying relative importance.

[0029] See also Figure 1As shown, in some embodiments of the present invention, when a plasma etching device is used to etch a semiconductor film, a semiconductor film 102 to be etched is placed on a base 101 in a chamber 100. Afterwards, an appropriate amount of gas is input through the gas inlet 103, and the gas can be an etching gas such as oxygen or fluorine. A high-frequency electric field is generated by a magnet to generate plasma in the vacuum chamber 100. The high-frequency electric field ionizes the gas molecules, generates positive ions and free electrons, and forms plasma. The generated plasma is accelerated by an accelerator so that it has enough energy to impact the surface of the material. The accelerator is usually an electric field or a magnetic field, and the energy of the plasma can be adjusted as needed. The accelerated plasma impacts the surface of the material at a high speed, knocking out atoms or molecules on the surface, and achieving the etching of the semiconductor film. In this embodiment, for example, two pairs of magnets are provided, a pair of first magnets 104 is provided on one side of the top of the chamber 100, and a pair of second magnets 105 is provided on one side of the bottom of the chamber 100, and the direction of plasma etching and the etching rate are adjusted by two pairs of magnets. An advanced process control (APC) system 106 is also provided on the plasma etching device. The advanced process control system 106 is electrically connected to a driving device of the magnetic pole, such as a motor that drives the magnet to move, so as to adjust the position of the magnet.

[0030] See also Figure 1 and Figure 2 As shown, the present invention provides a semiconductor film etching method, which is applicable to an etching device provided with an advanced process control system 106 and a magnet. The semiconductor film etching method provided by the present application can improve the uniformity of the etched semiconductor film 102. Specifically, the semiconductor film etching method includes steps S10 to S30.

[0031] Step S10, collecting thickness uniformity data of a plurality of etched semiconductor films and position data of the magnet.

[0032] Step S20, obtaining the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet.

[0033] Step S30, when the semiconductor film is etched, monitor the thickness uniformity data of the semiconductor film in the etched area, and when the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold, adjust the position of the magnet according to the relationship between the acquired thickness uniformity data of the etched semiconductor film and the position data of the magnet.

[0034] See also Figure 1 and Figure 2As shown, in one embodiment of the present invention, in step S10, the thickness uniformity data of multiple etched semiconductor films 102 and the position data of the magnets are first collected. Among them, the number of groups of the position data of the magnets is related to the category of the magnets, and the position data of each group of magnets is related to the position of the magnets. In this embodiment, a pair of first magnets 104 arranged on one side of the top of the chamber 100 are synergistic and belong to the same category, so when adjusting, a pair of first magnets 104 act at the same time, and a pair of first magnets 104 correspond to a group of magnet position data. A pair of second magnets 105 arranged on one side of the bottom of the chamber 100 are synergistic and belong to the same category, so when adjusting, a pair of second magnets 105 act at the same time, and a pair of second magnets 105 correspond to a group of magnet position data. Among them, the position data of the first magnet 104 is, for example, the first position data, and the position data of the second magnet 105 is, for example, the second position data.

[0035] It should be noted that the categories of magnets in the present application are used to distinguish magnets with different functions, that is, when two or more magnets act at the same time, have the same range of action, and have the same magnet function, the two or more magnets belong to the same category.

[0036] See also Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the first magnet 104 and the second magnet 105 have a set position data range under the control of the advanced process control system 106, and the data range of the first position data and the second position data is, for example, 0~A. That is, the maximum distance that the first magnet 104 and the second magnet 105 can move is A, and the position data of the first magnet 104 and the second magnet 105 at one extreme position is set to 0. When the first magnet 104 and the second magnet 105 move from the extreme position with the position data of 0 to another extreme position, the position data of the first magnet 104 and the second magnet 105 gradually increase until the first magnet 104 and the second magnet 105 reach another extreme position, and the position data of the first magnet 104 and the second magnet 105 is A. Among them, the data ranges of the first position data and the second position data can be the same or different. In this embodiment, the data ranges of the first position data and the second position data are the same.

[0037] See also Figure 1 and Figure 2 As shown, it should be noted that, in other embodiments, one or more magnets may be provided in the etching device, that is, only the first magnet 104 may be provided, or in addition to the first magnet 104 and the second magnet 105, a third magnet, a fourth magnet or a fifth magnet of different types may be provided. The position data of each magnet and the data range of the position data are set according to the type of the magnet and the magnet position of each magnet.

[0038] See also Figure 1 and Figure 2 As shown, in one embodiment of the present invention, when collecting thickness uniformity data of multiple etched semiconductor films and position data of magnets, the position of one magnet is changed, and the positions of other magnets are kept unchanged, and the thickness uniformity data of the semiconductor film is obtained at each test position. In this embodiment, the position of the second magnet 105 is kept unchanged, and the first magnet 104 is moved from the test position with position data of 0 to the test position with position data of A in sequence according to the preset spacing, and the thickness uniformity data of the semiconductor film at each test position is obtained. Then the position of the second magnet 105 is moved, and at each test position of the second magnet 105, the first magnet 104 is moved from the test position with position data of 0 to the test position with position data of A in sequence according to the preset spacing, and the thickness uniformity data of the semiconductor film at each test position is obtained, until the position data of the second magnet 105 is A.

[0039] See also Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the preset spacing of each movement of the first magnet 104 or the second magnet 105 is set according to the requirements. The smaller the preset spacing of each movement, the more accurate the relationship between the thickness uniformity data of the etched semiconductor film 102 and the position data of the magnets. The data range of the first position data corresponding to the first magnet 104 and the second position data corresponding to the second magnet 105 is 0~A. If the preset spacing of each movement is a, the number of test positions that the first magnet 104 and the second magnet 105 need to detect is A / a+1, and the total number of test positions that the first magnet 104 and the second magnet 105 need to detect is (A / a+1)×(A / a+1). Specifically, if the data range of the first position data corresponding to the first magnet 104 and the data range of the second position data corresponding to the second magnet 105 are, for example, 0~20, and the preset spacing of each movement of the first magnet 104 and the second magnet 105 is, for example, 5, then the number of test positions that need to be detected by the first magnet 104 and the second magnet 105 are 5 respectively, and the total number of test positions that need to be detected by the first magnet 104 and the second magnet 105 is 25.

[0040] See also Figure 2 and Figure 3 As shown, in one embodiment of the present invention, at each test position, a method for obtaining thickness uniformity data of a semiconductor thin film includes steps S101 to S102.

[0041] Step S101 , setting a plurality of detection positions in the etched region of the semiconductor film, and obtaining the thickness of the semiconductor film at each detection position.

[0042] Step S102: Obtain thickness uniformity data of the semiconductor film according to the thickness of the semiconductor film at multiple detection positions.

[0043] See also Figure 2 and Figure 3 As shown, in one embodiment of the present invention, the number of detection positions set in the etched area of ​​the semiconductor film is set according to the demand. The number of detection positions is, for example, 15, 17, 19 or 21. Multiple detection positions are distributed and dispersed in the etched area of ​​the semiconductor film. Among them, multiple detection positions can be evenly dispersed in the etched area of ​​the semiconductor film, or a detection position can be set in the center of the etched area of ​​the semiconductor film, and the remaining detection positions are set around the center of the etched area of ​​the semiconductor film, and the shape of the surrounding is the same as the etched area of ​​the semiconductor film. In this embodiment, the number of detection positions is, for example, 17, and the etched area of ​​the semiconductor film is, for example, circular, then a detection position is set at the center of the circle where the etched area of ​​the semiconductor film is located. Then, with the center of the etched area as the center, 6 detection positions are set as the radius of half the radius of the circle where the etched area of ​​the semiconductor film is located. Finally, with the center of the etched area as the center, 10 detection positions are set as the radius of the circle where the etched area of ​​the semiconductor film is located. And every three detection positions are not on a diameter of the etched area of ​​the semiconductor film.

[0044] See also Figure 2 and Figure 3 As shown, in one embodiment of the present invention, there are multiple methods for obtaining the thickness uniformity data of the semiconductor film according to the thickness of the semiconductor film at each detection position. In some embodiments, the square average of the difference between the thickness of the semiconductor film at each detection position and the average of the thickness of all semiconductor films can be obtained first, and then the square root thereof is taken as the thickness uniformity data of the semiconductor film. In other embodiments, the maximum semiconductor film thickness obtained is subtracted from the minimum semiconductor film thickness, and the result is divided by twice the average of the thickness of all semiconductor films to obtain the thickness uniformity data of the semiconductor film. In other embodiments, any other known method can also be used to obtain the thickness uniformity data of the semiconductor film.

[0045] See also Figures 1 to 4 As shown, in one embodiment of the present invention, after collecting the thickness uniformity data of a plurality of etched semiconductor films and the position data of the magnet, step S20 is performed to obtain the relationship between the thickness uniformity data of the etched semiconductor films and the position data of the magnet. In the present application, the relationship between the thickness uniformity data of the etched semiconductor films and the position data of the magnet can be as follows: Figure 4The contour diagram of the thickness uniformity data of the semiconductor film and the position data of the magnet shown can also be a relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet.

[0046] See also Figure 1 As shown, in one embodiment of the present invention, in step S20, when obtaining the relationship between the thickness uniformity data of the etched semiconductor film 102 and the position data of the magnet, a relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnet is first established. The relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnet includes the thickness uniformity data of the semiconductor film of each magnet at each test position. The details are shown in Table 1.

[0047] Table 1 Relationship between the thickness uniformity data of semiconductor films and the position data of magnets

[0048] Please refer to Table 1 and Figure 1 As shown, in the present application, the relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnets includes the thickness uniformity data of the semiconductor film at each test position of the first magnet 104 and the second magnet 105 .

[0049] Please refer to Table 1. Figure 2 and Figure 4 As shown, in one embodiment of the present invention, when the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet is prepared according to the relationship table of the thickness uniformity data of the semiconductor film and the position data of the magnet. In this embodiment, the abscissa of the contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet is the position data of the first magnet 104, and the ordinate is the position data of the second magnet 105. In the contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, colors are used to distinguish the thickness uniformity data of the semiconductor film of the first magnet 104 and the second magnet 105 at each test position. Among them, QC is the thickness uniformity data of the semiconductor film.

[0050] See also Figure 1 and Figure 2As shown, in one embodiment of the present invention, when the relationship between the thickness uniformity data of the etched semiconductor film 102 and the position data of the magnet is a relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet, the relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet is obtained according to the data in the relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnet. In this embodiment, the relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet is obtained by the following relationship: Z=F(0)+F(x1)+F(x2)+F(x1x2); Among them, Z is the target thickness uniformity of the semiconductor film, F(0) is the actual thickness uniformity of the semiconductor film, F(x1) is the influence of the position of the first magnet 104 on the thickness uniformity of the semiconductor film, and F(x2) is the influence of the position of the second magnet 105 on the thickness uniformity of the semiconductor film; F(x1x2) is the cross-influence of the position of the first magnet 104 and the position of the second magnet 105 on the thickness uniformity of the semiconductor film; x1 is the position data of the first magnet 104; x2 is the position data of the second magnet 105.

[0051] Since not only the first magnet 104 and the second magnet 105 themselves affect the target thickness uniformity of the semiconductor film, but also the interaction between the first magnet 104 and the second magnet 105 affects the target thickness uniformity of the semiconductor film, the relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnets can be expressed as follows using a multinomial second-order expression: Where Z is the target thickness uniformity of the semiconductor film, β0 is the actual thickness uniformity of the semiconductor film, and β i is the influence coefficient of the position of the first magnet 104 on the uniformity of the semiconductor film thickness, β j is the influence coefficient of the position of the second magnet 105 on the uniformity of the semiconductor film thickness, β ij is the cross-influence coefficient of the position of the first magnet 104 and the position of the second magnet 105 on the uniformity of the semiconductor film thickness, x 1i The i-th position data of the first magnet 104, x 2j is the j-th position data of the second magnet 105, k1 is the number of test positions of the first magnet 104; k2 is the number of test positions of the second magnet 105; and a is a constant.

[0052] See also Figure 1 and Figure 2As shown, in one embodiment of the present invention, after the data in the relationship table of the semiconductor film thickness uniformity data and the magnet position data are substituted into the multinomial second-order expression of the semiconductor film target thickness uniformity and the actual thickness uniformity and the magnet position data, the relationship between the semiconductor film target thickness uniformity and the actual thickness uniformity and the magnet position data is obtained as follows: Z=1.592+0.5155x1+0.0674x2-0.01300x1 2 +0.01095x2 2 -0.01330x1x2.

[0053] See also Figure 1 and Figure 2 As shown, in one embodiment of the present invention, after obtaining the relationship between the thickness uniformity data of the etched semiconductor film 102 and the position data of the magnet, the relationship between the thickness uniformity data of the etched semiconductor film 102 and the position data of the magnet is imported into the advanced process control system 106.

[0054] See also Figure 1 and Figure 5 As shown, in one embodiment of the present invention, after the relationship between the thickness uniformity data of the etched semiconductor film 102 and the position data of the magnet is imported into the advanced process control system 106, when the etching device is used to etch the semiconductor film, the etching method of the semiconductor film includes steps S301 to S305.

[0055] Step S301, maintaining the etching device.

[0056] Step S302: etching the semiconductor film, and monitoring thickness uniformity data of the semiconductor film in the etched area while etching the semiconductor film.

[0057] Step S303, determine whether the thickness uniformity data of the semiconductor film in the etched area exceeds the threshold. If the thickness uniformity data of the semiconductor film in the etched area exceeds the threshold, execute step S304; if the thickness uniformity data of the semiconductor film in the etched area is within the threshold range, return to step S302, continue etching the semiconductor film, and monitor the thickness uniformity data of the semiconductor film in the etched area in real time until the etching process is completed.

[0058] Step S304: adjusting the position of the magnet according to the relationship between the acquired thickness uniformity data of the etched semiconductor film and the position data of the magnet.

[0059] Step S305, determine whether the thickness uniformity data of the semiconductor film in the etched area returns to the threshold after adjusting the position of the magnet. If the thickness uniformity data of the semiconductor film in the etched area returns to the threshold, execute step S302; if the thickness uniformity data of the semiconductor film in the etched area still exceeds the threshold, return to step S301.

[0060] See also Figure 5 As shown, in one embodiment of the present invention, in step S301, maintenance of the etching device includes cleaning the etching device, checking parts of the etching device, adjusting key parts in the etching device, cleaning and maintenance, etc.

[0061] See also Figure 5 As shown, in one embodiment of the present invention, in step S304, the position of the magnet is adjusted according to the relationship between the acquired thickness uniformity data of the etched semiconductor film and the position data of the magnet. Since the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet can be a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, it can also be a relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet. The method of adjusting the position of the magnet is different.

[0062] See also Figure 4 , Figure 5 and Figure 6 As shown, in one embodiment of the present invention, when the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a contour plot of the thickness uniformity data of the semiconductor film and the position data of the magnet, the method for adjusting the position of the magnet includes steps S3041 to S3042.

[0063] Step S3041: Obtain the thickness uniformity that needs to be adjusted according to the target thickness uniformity and the actual thickness uniformity.

[0064] Step S3042: according to the thickness uniformity that needs to be adjusted, the position data corresponding to the magnet is searched in the contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, and the magnetic pole is adjusted.

[0065] The thickness uniformity to be adjusted is equal to the difference between the target thickness uniformity and the actual thickness uniformity. When the position data corresponding to the magnet is searched in the contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet according to the thickness uniformity to be adjusted, and the magnetic pole is adjusted, the position data corresponding to the magnet is first searched in the contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet according to the thickness uniformity to be adjusted, and the area corresponding to the thickness uniformity to be adjusted is searched, and the target position data closest to the current magnet position is searched in the area, and the current magnet is adjusted to the position where the target position data is located.

[0066] See also Figure 5 As shown, in one embodiment of the present invention, when the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is the relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet, the advanced process control system 106 automatically adjusts the position of the magnet according to the set target thickness uniformity and the actual thickness uniformity actually detected.

[0067] See also Figure 7 As shown, the advanced process control system 106 provided in the embodiment of the present application further includes a memory 1062, a processor 1061, and a program stored in the memory and executable on the processor, wherein the processor executes the above-mentioned semiconductor film etching method.

[0068] See also Figure 7 As shown, the memory 1062 includes at least one type of readable storage medium, and the readable storage medium includes a flash memory, a mobile hard disk, a multimedia card, a card-type memory (for example, SD or DX memory, etc.), a magnetic memory, a disk, an optical disk, etc. In some embodiments, the memory can be an internal storage unit of a data storage device, such as a mobile hard disk of the data storage device. In other embodiments, the memory can also be an external storage device of a data storage device, such as a plug-in mobile hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), etc. equipped on the data storage device. Further, the memory can also include both an internal storage unit of a data storage device and an external storage device. The memory can be used not only to store application software and various types of data installed in the data storage device, but also to temporarily store data that has been output or is to be output.

[0069] See also Figure 7As shown, the processor 1061 may be composed of an integrated circuit in some embodiments, for example, a single packaged integrated circuit, or a plurality of packaged integrated circuits with the same or different functions, including one or more central processing units (CPUs), microprocessors, digital processing chips, graphics processors, and combinations of various control chips. The processor is the control core (ControlUnit) of the vehicle-mounted device, and uses various interfaces and lines to connect various components of the entire vehicle-mounted device, and executes various functions of the vehicle-mounted device and processes data by running or executing programs or modules stored in the memory, and calling data stored in the memory.

[0070] The processor executes the operating system of the vehicle-mounted device and various installed application programs. The processor executes the application programs to implement the steps in the above method embodiment.

[0071] Exemplarily, the program may be divided into one or more modules, which are stored in the memory and executed by the processor to complete the present invention. The one or more modules may be a series of program command segments capable of completing specific functions, which are used to describe the execution process of the program in the vehicle-mounted device.

[0072] The above-mentioned integrated unit implemented in the form of a software function module can be stored in a computer-readable storage medium. The above-mentioned software function module is stored in a storage medium, and includes a number of commands for enabling a computer device (which can be a personal computer, a computer device, or a network device, etc.) or a processor to perform part of the functions of the lithium battery cold solder joint detection method of each embodiment of the present invention.

[0073] In summary, the present invention provides a semiconductor film etching method and etching device, the semiconductor film etching method comprising the following steps: collecting thickness uniformity data of multiple etched semiconductor films and position data of a magnet, and obtaining the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet. When the semiconductor film is etched, the thickness uniformity data of the semiconductor film in the etched area is monitored, and when the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold value, the position of the magnet is adjusted according to the relationship between the acquired thickness uniformity data of the etched semiconductor film and the position data of the magnet. The semiconductor film etching method and etching device provided by the present invention have the unexpected effect of: firstly establishing a relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnet according to the thickness uniformity data of multiple etched semiconductor films and the position data of the magnet, and obtaining a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet according to the relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnet or a relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet as the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet. The relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is introduced into the advanced process control system of the etching device. When the etching device is used to etch the semiconductor film, when the thickness uniformity data of the semiconductor film in the etched area exceeds the threshold, the etching device can adjust the position of the magnet according to the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet, so that the uniformity data of the semiconductor film returns to the threshold. Then the thickness uniformity of the semiconductor film is automatically adjusted, avoiding the need for frequent maintenance of the etching device, thereby avoiding line breaks. While improving product quality, it also increases production capacity.

[0074] The embodiments of the present invention disclosed above are only used to help illustrate the present invention. The embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A method for etching a semiconductor thin film, characterized in that: The following steps are involved: Collecting thickness uniformity data of a plurality of etched semiconductor films and position data of a magnet; Acquire the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet; as well as When the semiconductor film is being etched, the thickness uniformity data of the semiconductor film in the etched area is monitored. When the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold, the position of the magnet is adjusted according to the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet.

2. The semiconductor thin film etching method according to claim 1, characterized in that: When collecting thickness uniformity data of multiple etched semiconductor films and position data of magnets, the position of one magnet is changed, and the positions of other magnets are kept unchanged, and the thickness uniformity data of the semiconductor film is obtained at each test position.

3. The semiconductor thin film etching method according to claim 2, characterized in that: At each test position, obtaining thickness uniformity data of the semiconductor film includes the following steps: Setting a plurality of detection positions in the etched region of the semiconductor film, and obtaining the thickness of the semiconductor film at each of the detection positions; and The thickness uniformity data of the semiconductor film is obtained according to the thickness of the semiconductor film at the plurality of detection positions.

4. The method for etching a semiconductor thin film according to claim 1, wherein: When obtaining the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet, a relationship table between the thickness uniformity data of the semiconductor film and the position data of the magnet is first established.

5. The semiconductor thin film etching method according to claim 1, characterized in that: The relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet.

6. The semiconductor thin film etching method according to claim 1, characterized in that: The relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet.

7. The semiconductor thin film etching method according to claim 6, characterized in that: The relationship between the target thickness uniformity of the semiconductor film and the actual thickness uniformity and the position data of the magnet is: Where Z is the target thickness uniformity of the semiconductor film, β0 is the actual thickness uniformity of the semiconductor film, and β i is the influence coefficient of the first magnet position on the uniformity of semiconductor film thickness, β j is the influence coefficient of the second magnet position on the uniformity of semiconductor film thickness, β ij is the cross-influence coefficient of the first magnet position and the second magnet position on the uniformity of semiconductor film thickness, x 1i The i-th position data of the first magnet, x 2j is the j-th position data of the second magnet, k1 is the number of test positions of the first magnet; k2 is the number of test positions of the second magnet; and a is a constant.

8. The semiconductor thin film etching method according to claim 1, characterized in that: When the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold value, adjusting the position of the magnet according to the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet comprises the following steps: Monitoring thickness uniformity data of the semiconductor film in the etched area; Determine whether the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold value, and when the thickness uniformity data of the semiconductor film in the etched area does not exceed the threshold value, monitor the thickness uniformity data of the semiconductor film in the etched area in real time until the etching process ends; When the thickness uniformity data of the semiconductor film in the etched area exceeds a threshold value, adjusting the position of the magnet, and determining whether the thickness uniformity data of the semiconductor film in the etched area returns to within the threshold value after adjusting the position of the magnet; If the thickness uniformity data of the semiconductor film in the etched area returns to within the threshold, the etching is continued, and the thickness uniformity data of the semiconductor film in the etched area is monitored in real time until the etching process is completed; If the thickness uniformity data of the semiconductor film in the etched area still exceeds the threshold, the etching device is maintained.

9. The semiconductor thin film etching method according to claim 1, characterized in that: When the relationship between the thickness uniformity data of the etched semiconductor film and the position data of the magnet is a contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, adjusting the position of the magnet comprises the following steps: Obtaining thickness uniformity that needs to be adjusted according to target thickness uniformity and actual thickness uniformity; and In the contour map of the thickness uniformity data of the semiconductor film and the position data of the magnet, find the area corresponding to the thickness uniformity that needs to be adjusted, and find the target position data closest to the current magnet position in the area, and adjust the magnet to the position where the target position data is located.

10. A semiconductor thin film etching device, characterized in that: The semiconductor film etching device comprises: Chamber; A base is arranged in the chamber, and the semiconductor film to be etched is placed on the base; A first magnet is disposed on one side of the top of the chamber; A second magnet is disposed on one side of the bottom of the chamber; and An advanced process control system comprises a memory, a processor and a program stored in the memory and executable on the processor, wherein the processor executes the semiconductor film etching method according to any one of claims 1 to 9.

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