Anti-radiation packaging structure and manufacturing method thereof

Abstract

The present application relates to a kind of anti-radiation packaging structure and its manufacturing method.The structure includes: first heavy wiring layer;Shielding layer, arranged below the first heavy wiring layer;Metal column, arranged above the first heavy wiring layer;Processor chip module, arranged above the first heavy wiring layer;Shielding cover, covers the processor chip module;Plastic encapsulation layer, plastic encapsulation and cover the metal column, the processor chip module and the shielding cover;Second heavy wiring layer, arranged above the plastic encapsulation layer;Detector chip module, arranged above the second heavy wiring layer;Solder ball.The anti-radiation packaging structure provided by the present application is provided with shielding cover above processor chip module, and shielding layer is provided below processor chip module, and three-dimensional protection is formed to processor chip module, which can effectively reduce the radiation of external processor chip module, and improve the service life of packaging structure.

Description

Technical Field

[0001] This invention relates to the field of packaging technology, and in particular to a radiation-resistant packaging structure and its manufacturing method. Background Technology

[0002] X-rays are high-energy rays. X-ray tubes, magnetrons, and klystrons are devices that generate X-ray sources. They are accelerated by electrons in an electric current, bombarding heavy metal targets at high speed and emitting X-rays. X-rays have a strong penetrating power and can damage detection devices, therefore X-ray protection is necessary. X-ray detectors are widely used in medical and industrial fields such as CT scans. Currently, the highest resolution X-ray detector is the photon counter structure X-ray detector, as shown in the schematic diagram of its cross-sectional view. Figure 1 As shown, the photon counter structure X-ray detector can be generally divided into two layers: a pixelated sensor layer on top and a readout chip below. The sensor and processing chips are flip-chip bonded together using soldered metal balls, with one soldered ball corresponding to one pixel, and each pixel corresponding to a processing unit on the processing chip. The detector and processing chips are manufactured using different processes and then stacked in three dimensions. The lower processor chip is manufactured using CMOS technology. High-energy rays such as X-rays can damage the processor chip. High-energy rays produce ionization effects in electronic components, leading to varying degrees of damage, such as oxide charge traps and increased leakage current, which will significantly reduce the lifespan of electronic components. Therefore, how to reduce the radiation impact of high-energy rays such as X-rays on the processor chip is an urgent problem to be solved. Summary of the Invention

[0003] To address some or all of the problems in the prior art, the present invention provides a radiation-resistant packaging structure, the structure comprising:

[0004] First wiring layer;

[0005] A protective layer is disposed below the first wiring layer;

[0006] A metal pillar is disposed on the first super-wiring layer and is electrically connected to the first super-wiring layer.

[0007] A processor chip module is disposed on the first wiring layer and is electrically connected to the first wiring layer through a first connection structure.

[0008] A protective cover that covers the processor chip module;

[0009] A molding layer is used to mold and cover the metal pillar, the processor chip module, and the protective cover.

[0010] A second wiring layer is disposed on the molding layer and is electrically connected to the metal pillar.

[0011] A detector chip module is disposed on the second wiring layer and is electrically connected to the second wiring layer through a second connection structure.

[0012] Solder balls are disposed below the first superrouting layer and are electrically connected to the first superrouting layer.

[0013] Furthermore, the first connection structure is a solder pad, solder ball, bump, or wire bonding; and / or

[0014] The second connection structure is a solder pad, solder ball, bump, or wire bonding.

[0015] The present invention also provides a method for manufacturing a radiation-resistant packaging structure, the method comprising the following steps:

[0016] Create a protective layer and a first wiring layer, and then create metal pillars on top of the first wiring layer;

[0017] Above the first wiring layer, the processor chip module and the protective cover are attached;

[0018] A molding layer is fabricated to mold and cover the metal pillar, the processor chip module, and the protective cover;

[0019] Thin the molding layer to expose the top surface of the metal pillar and create a second wiring layer;

[0020] Create solder balls below the first wiring layer;

[0021] Above the second wiring layer, the detector chip module is bonded to form a radiation-resistant packaging structure.

[0022] Furthermore, the first wiring layer is fabricated on a substrate;

[0023] Before making solder balls, remove the carrier plate;

[0024] The carrier is a glass sheet, a silicon sheet, a sapphire sheet, or a metal sheet.

[0025] Further, the material of the protective layer includes one or more of polymers, lead-tungsten materials, aluminum-lead microcomposite materials, or lead-free polymeric materials; wherein the lead-tungsten materials include one or more of lead or tungsten, and the lead-free polymeric materials include one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin; and / or

[0026] The material of the protective cover includes one or more of polymer, lead-tungsten material, aluminum-lead microcomposite material, or lead-free polymeric material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymeric material includes one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin.

[0027] Furthermore, the bottom or side wall of the protective cover is provided with multiple small holes to facilitate the flow of molding compound into the protective cover.

[0028] Furthermore, the first redistribution layer includes multiple dielectric layers and multiple metal layers; and / or

[0029] The second redistribution layer includes multiple dielectric layers and multiple metal layers.

[0030] Furthermore, the material of the metal pillar includes one or more of copper, tungsten, silver, aluminum, or titanium.

[0031] Furthermore, the processor chip module is mounted on the first wiring layer in a conventional or flip-chip manner;

[0032] The processor chip module contains multiple identical chips, multiple chips of the same type, or multiple chips of different types.

[0033] Furthermore, the encapsulation is injection molded; and / or

[0034] The material of the encapsulation layer is epoxy resin.

[0035] The technical solution provided by this invention has the following beneficial effects: The radiation-resistant packaging structure provided by this invention provides a protective cover on top of the processor chip module and a protective layer below the processor chip module, forming a three-dimensional protection for the processor chip module. This effectively reduces the radiation from high-energy X-rays from the detector direction to the processor chip module, reduces external noise interference to the processor chip module, and improves the service life of the packaging structure. The radiation-resistant packaging structure provided by this invention can be widely used in fields such as high-energy X-ray detection and gamma-ray detection. Attached Figure Description

[0036] To further illustrate the above and other advantages and features of the various embodiments of the present invention, a more specific description of the various embodiments of the present invention will be presented with reference to the accompanying drawings. It is to be understood that these drawings depict only typical embodiments of the invention and are therefore not intended to limit its scope. In the drawings, identical or corresponding parts will be indicated by identical or similar reference numerals for clarity.

[0037] Figure 1 A schematic cross-sectional view of an existing photon counter structure X-ray detector is shown.

[0038] Figure 2 A cross-sectional schematic diagram of a radiation-resistant packaging structure according to an embodiment of the present invention is shown;

[0039] Figure 3 A cross-sectional schematic diagram of a radiation-resistant packaging structure according to another embodiment of the present invention is shown;

[0040] Figure 4 A schematic flowchart illustrating a method for manufacturing a radiation-hardened packaging structure according to an embodiment of the present invention is shown; and

[0041] Figures 5a-5f A cross-sectional schematic diagram of the process of forming a radiation-resistant encapsulation structure according to an embodiment of the present invention is shown. Detailed Implementation

[0042] In the following description, the invention is described with reference to various embodiments. However, those skilled in the art will recognize that the embodiments may be practiced without one or more specific details or with other alternatives and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure the inventive points of the invention. Similarly, for illustrative purposes, specific quantities, materials, and configurations are set forth to provide a comprehensive understanding of embodiments of the invention. However, the invention is not limited to these specific details. Furthermore, it should be understood that the embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0043] In this specification, references to "an embodiment" or "this embodiment" mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of the invention. The phrase "in one embodiment" appearing throughout this specification does not necessarily refer to the same embodiment in all instances.

[0044] In this specification, unless otherwise specified, "arranged on," "arranged above," and "arranged on top of" do not exclude the possibility of an intermediate element between them. Furthermore, "arranged on or above" merely indicates the relative positional relationship between two components, and in certain cases, such as when the product orientation is reversed, it can also be converted to "arranged below or under," and vice versa.

[0045] In this specification, unless otherwise specified, "upper surface" and "side surface" are used only to describe surfaces that distinguish the same component. Furthermore, "first," "second," and "third" are used only for distinguishing descriptions and do not imply differences in size.

[0046] In this specification, unless otherwise specified, the quantifiers “one” and “one” do not exclude scenarios involving multiple elements, and the quantifiers “multiple” and “more” refer to one or more elements.

[0047] It should be noted that the embodiments of the present invention describe the method steps in a specific order; however, this is only for illustrating the specific embodiment and not for limiting the order of the steps. On the contrary, in different embodiments of the present invention, the order of the steps can be adjusted according to actual needs.

[0048] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

[0049] Figure 2 A cross-sectional schematic diagram of a radiation-resistant packaging structure according to an embodiment of the present invention is shown. Figure 2As shown, the radiation-resistant packaging structure includes a first redistribution layer 101, a protective layer 102, metal pillars 103, a first chip module 104, a first connection structure 105, a protective cover 106, a molding compound 107, a second redistribution layer 108, solder balls 109, a detector chip module 110, and a second connection structure 111. The protective layer 102 is disposed below the first redistribution layer 101. The metal pillars 103 are disposed above the first redistribution layer 101 and are electrically connected to it. The processor chip module 104 is disposed above the first redistribution layer 101 and is electrically connected to it via the first connection structure 105. The protective cover 106 is disposed above and covers the processor chip module 104, and the protective layer 102 is disposed below the processor chip module 104, thereby forming three-dimensional protection for the processor chip module 104. A molding compound 107 encapsulates and covers the metal pillar 103, the processor chip module 104, and the protective cover 106. A second wiring layer 108 is disposed on top of the molding compound 107 and is electrically connected to the first wiring layer 101 via the metal pillar 103. A detector chip module 110 is disposed on top of the second wiring layer 108 and is electrically connected to the second wiring layer 108 via a second connection structure 111. Solder balls 109 are disposed below the first wiring layer 101 and are electrically connected to the first wiring layer 101. In one embodiment of the present invention, multiple radiation-hardened package structures can be integrated to simultaneously encapsulate multiple processor chip modules 104 and detector chip modules 110, forming a radiation-hardened package structure array.

[0050] In one embodiment of the present invention, the first redistribution layer 101 may include multiple dielectric layers and multiple metal layers; and / or the second redistribution layer 108 may also include multiple dielectric layers and multiple metal layers. In one embodiment of the present invention, the dielectric layer may be an organic material such as polyimide (PI), FR-4, or BT resin, or an inorganic material such as SiOx or SiNx; the metal material of the metal layer is preferably one or a combination of copper, tungsten, aluminum, copper alloy, and titanium.

[0051] In one embodiment of the present invention, the material of the protective layer 102 includes one or more of polymers, lead-tungsten materials, aluminum-lead microcomposite materials, or lead-free polymeric materials; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymeric material includes one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin; and / or the material of the protective cover 106 includes one or more of polymers, lead-tungsten materials, aluminum-lead microcomposite materials, or lead-free polymeric materials; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymeric material includes one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin. In one embodiment of the present invention, the bottom or sidewall of the protective cover 106 is provided with multiple small holes to facilitate the flow of molding compound 107 into the protective cover 106, thereby better protecting the processor chip module 104.

[0052] In one embodiment of the present invention, the material of the metal column 103 includes one or more of copper, tungsten, silver, aluminum, or titanium. In one embodiment of the present invention, the height of the metal column 103 is 3µm-400µm.

[0053] In one embodiment of the present invention, the processor chip module 104 may include multiple identical chips, multiple chips of the same type, or multiple chips of different types. In one embodiment of the present invention, the chip may be a logic chip such as a CPU, DSP, GPU, or FPGA; a memory chip such as DRAM, Flash, or HBM; or other types of chips such as SoC or sensors (such as MEMS sensors). In one embodiment of the present invention, the first connection structure 105 may be a solder pad, solder ball, bump, or wire bonding. In one embodiment of the present invention, the first redistribution layer 101 may include an under-bump metallization (UBM) structure, the material of which may be Ti / Cu, Ti / Cu / Ni / Cu, or Ti / Cu / Ni / Au. In one embodiment of the present invention, the processor chip module 104 may be electrically connected to the first redistribution layer 101 at the UBM structure.

[0054] In one embodiment of the present invention, the material of the molding layer 107 may be epoxy resin.

[0055] In one embodiment of the present invention, the material of the solder ball 109 may include one or more of copper, nickel, tin, silver, aluminum, or titanium.

[0056] In one embodiment of the present invention, the detector chip module 110 may include multiple identical chips, multiple chips of the same type, or multiple chips of different types. In one embodiment of the present invention, the chip may be an X-ray detection chip or a gamma-ray detection chip, etc. In one embodiment of the present invention, the second connection structure 111 may be a pad, a solder ball, a bump, or a wire bond. In one embodiment of the present invention, the second redistribution layer 108 may include a metallization under the bump structure, and the material of the metallization under the bump structure may be Ti / Cu, Ti / Cu / Ni / Cu, or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the detector chip module 110 may be electrically connected to the first redistribution layer 101 at the metallization under the bump structure.

[0057] Figure 3 A cross-sectional schematic diagram of a radiation-resistant packaging structure according to another embodiment of the present invention is shown. Figure 2 This corresponds to the scenario where the processor chip module is flip-chip mounted on the first wiring layer. Figure 3 This corresponds to the scenario where the processor chip module is mounted on top of the first wiring layer. For example... Figure 3 As shown, the processor chip module 204 is electrically connected to the first rewiring layer 201 via metal wire bonding.

[0058] Figure 4 A schematic flowchart illustrating a method for manufacturing a radiation-resistant packaging structure according to an embodiment of the present invention is shown. Figures 5a-5f A cross-sectional schematic diagram of the process of forming a radiation-resistant packaging structure according to an embodiment of the present invention is shown below. Figure 4 and Figures 5a-5f This invention describes a method for manufacturing a radiation-resistant packaging structure.

[0059] First, a protective layer 102 and a first rewiring layer 101 are fabricated. Then, metal pillars 103 are fabricated on top of the first rewiring layer 101. Figure 5aAs shown. In one embodiment of the present invention, the first redistribution layer 101 and the protective layer 102 are fabricated on a substrate, which can be a glass sheet, a silicon wafer, a sapphire wafer, or a metal sheet. In one embodiment of the present invention, the first redistribution layer 101 may include multiple dielectric layers and multiple metal layers. In one embodiment of the present invention, the dielectric layer may be an organic material such as polyimide (PI), FR-4, or BT resin, or an inorganic material such as SiOx or SiNx; the metal material of the metal layer is preferably one or a combination of copper, tungsten, aluminum, copper alloy, and titanium. In one embodiment of the present invention, the material of the protective layer 102 includes one or more of polymers, lead-tungsten materials, aluminum-lead microcomposite materials, or lead-free polymeric materials; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymeric material includes one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin. In one embodiment of the present invention, the material of the metal pillar 103 includes one or more of copper, tungsten, silver, aluminum, or titanium. In one embodiment of the present invention, the height of the metal pillar 103 is 3µm-400µm.

[0060] Next, on top of the first wiring layer 101, the processor chip module 104 and the protective cover 106 are attached, as follows: Figure 5bAs shown. The processor chip module 104 is electrically connected to the first redistribution layer 101 via a first connection structure 105. In one embodiment of the present invention, the processor chip module 104 can be mounted on the first redistribution layer 101 in a top-mount or flip-chip manner. In one embodiment of the present invention, the processor chip module 104 may include multiple identical chips, multiple chips of the same type, or multiple chips of different types. In one embodiment of the present invention, the chip may be a logic chip such as a CPU, DSP, GPU, or FPGA, or a memory chip such as DRAM, Flash, or HBM, or other types of chips such as SoC or sensors (such as MEMS sensors). In one embodiment of the present invention, the first connection structure 105 is a solder pad, solder ball, bump, or wire bonding. In one embodiment of the present invention, the first redistribution layer 101 may include an under-bump metallization (UBM) structure, and the material of the UBM structure may be Ti / Cu, Ti / Cu / Ni / Cu, or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the processor chip module 104 may be electrically connected to the first redistribution layer 101 at the under-bump metallization structure. In one embodiment of the present invention, the material of the protective cover 106 includes one or more of polymers, lead-tungsten materials, aluminum-lead microcomposite materials, or lead-free polymeric materials; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymeric material includes one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin. In one embodiment of the present invention, the bottom or sidewall of the protective cover 106 is provided with multiple small holes to facilitate the flow of molding compound 107 into the protective cover 106, thereby better protecting the processor chip module 104.

[0061] Next, a molding compound 107 is fabricated to mold and cover the metal pillar 103, the processor chip module 104, and the protective cover 106, as follows: Figure 5c As shown. In one embodiment of the present invention, the encapsulation is performed by injection molding, and the material of the encapsulation layer 107 can be epoxy resin.

[0062] Next, the molding compound 107 is thinned to expose the top surface of the metal pillar 103, and a second wiring layer 108 is fabricated, as follows. Figure 5d As shown. The second redistribution layer 108 is electrically connected to the first redistribution layer 101 via metal pillars 103. In one embodiment of the present invention, the second redistribution layer 108 may also include multiple dielectric layers and multiple metal layers. In one embodiment of the present invention, the dielectric layer may be an organic material such as polyimide (PI), FR-4, or BT resin, or an inorganic material such as SiOx or SiNx; the metal material of the metal layer is preferably one or a combination of copper, tungsten, aluminum, copper alloy, and titanium.

[0063] Next, solder balls 109 are fabricated below the first wiring layer 101, as follows: Figure 5e As shown. Solder balls 109 are electrically connected to the first redistribution layer 101. In one embodiment of the invention, the substrate is removed before the solder balls 109 are fabricated; the substrate is a glass sheet, a silicon wafer, a sapphire wafer, or a metal sheet.

[0064] Finally, the detector chip module 110 is bonded on top of the second wiring layer 108 to form a radiation-resistant packaging structure, such as... Figure 5f As shown. The detector chip module 110 is electrically connected to the second redistribution layer 108 via the second connection structure 111. In one embodiment of the present invention, the detector chip module 110 may include multiple identical chips, multiple chips of the same type, or multiple chips of different types. In one embodiment of the present invention, the chip may be an X-ray detection chip or a gamma-ray detection chip, etc. In one embodiment of the present invention, the second connection structure 111 may be a pad, solder ball, bump, or wire bonding. In one embodiment of the present invention, the second redistribution layer 108 may include an under-bump metallization structure, the material of which may be Ti / Cu, Ti / Cu / Ni / Cu, or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the detector chip module 110 may be electrically connected to the first redistribution layer 101 at the under-bump metallization structure.

[0065] The radiation-resistant packaging structure provided by this invention features a protective cover on top of the processor chip module and a protective layer below it, forming a three-dimensional protection for the processor chip module. This effectively reduces the radiation from high-energy X-rays originating from the detector direction, minimizes external noise interference, and extends the lifespan of the packaging structure. The radiation-resistant packaging structure provided by this invention can be widely used in fields such as high-energy X-ray detection and gamma-ray detection.

[0066] Although various embodiments of the invention have been described above, it should be understood that they are presented by way of example only and not as limitations. It will be apparent to those skilled in the art that various combinations, modifications, and alterations can be made without departing from the spirit and scope of the invention. Therefore, the breadth and scope of the invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should be defined solely by the appended claims and their equivalents.

Claims

1. An anti-radiation packaging structure, characterized in that, comprising: a first redistribution layer; a protection layer arranged below the first redistribution layer, a material of the protection layer comprising one or more of a polymer or a lead-tungsten material or an aluminum-lead micro-composite material or a lead-free polymer material, wherein the lead-tungsten material comprises one or more of lead or tungsten, and the lead-free polymer material comprises one or more of bismuth or barium or gadolinium or tungsten or antimony or tin; a metal pillar arranged on the first redistribution layer, the metal pillar being electrically connected with the first redistribution layer; a processor chip module arranged on the first redistribution layer, the processor chip module being electrically connected with the first redistribution layer through a first connection structure; a protection cover covering the processor chip module, a material of the protection cover comprising one or more of a polymer or a lead-tungsten material or an aluminum-lead micro-composite material or a lead-free polymer material, wherein the lead-tungsten material comprises one or more of lead or tungsten, and the lead-free polymer material comprises one or more of bismuth or barium or gadolinium or tungsten or antimony or tin; a plastic encapsulation layer encapsulating and covering the metal pillar, the processor chip module and the protection cover; a second redistribution layer arranged on the plastic encapsulation layer, the second redistribution layer being electrically connected with the metal pillar; a detector chip module arranged on the second redistribution layer, the detector chip module being electrically connected with the second redistribution layer through a second connection structure; and a solder ball arranged below the first redistribution layer, the solder ball being electrically connected with the first redistribution layer.

2. The anti-radiation packaging structure according to claim 1, wherein: the first connection structure is a pad or a solder ball or a bump or a metal wire; and / or the second connection structure is a pad or a solder ball or a bump or a metal wire. comprising the following steps:

3. A method of manufacturing the radiation resistant package structure according to any one of claims 1 to 2, characterized by, manufacturing a protection layer and a first redistribution layer, and manufacturing a metal pillar on the first redistribution layer, a material of the protection layer comprising one or more of a polymer or a lead-tungsten material or an aluminum-lead micro-composite material or a lead-free polymer material, wherein the lead-tungsten material comprises one or more of lead or tungsten, and the lead-free polymer material comprises one or more of bismuth or barium or gadolinium or tungsten or antimony or tin; attaching a processor chip module and a protection cover on the first redistribution layer, a material of the protection cover comprising one or more of a polymer or a lead-tungsten material or an aluminum-lead micro-composite material or a lead-free polymer material, wherein the lead-tungsten material comprises one or more of lead or tungsten, and the lead-free polymer material comprises one or more of bismuth or barium or gadolinium or tungsten or antimony or tin; manufacturing a plastic encapsulation layer encapsulating and covering the metal pillar, the processor chip module and the protection cover; thinning the plastic encapsulation layer to expose a top surface of the metal pillar, and manufacturing a second redistribution layer; manufacturing a solder ball below the first redistribution layer; and attaching a detector chip module on the second redistribution layer to form an anti-radiation packaging structure. ​ ​ 4. The method of claim 3, wherein: the first redistribution layer is formed on the carrier; the carrier is removed before forming the solder balls; the carrier is a glass wafer, a silicon wafer, a sapphire wafer, or a metal wafer.

5. The method of claim 3, wherein: the bottom or sidewall of the protective cap is provided with a plurality of small holes to facilitate the flow of the molding compound into the protective cap.

6. The method of claim 3, wherein: the first redistribution layer comprises a plurality of dielectric layers and a plurality of metal layers; and / or the second redistribution layer comprises a plurality of dielectric layers and a plurality of metal layers.

7. The method of claim 3, wherein: the material of the metal pillar comprises one or more of copper, tungsten, silver, aluminum, and titanium.

8. The method of claim 3, wherein: the processor chip module is attached to the first redistribution layer by flip-chip or face-up mounting; the processor chip module comprises a plurality of identical chips, a plurality of chips of the same type, or a plurality of chips of different types.

9. The method of claim 3, wherein: the molding is injection molding; and / or the material of the molding layer is epoxy resin.

Images