Topologically protected semiconductor laser array with supersymmetry matching

Abstract

The present disclosure provides a topologically protected semiconductor laser array with supersymmetry matching, and relates to the technical field of semiconductor lasers. The topologically protected semiconductor laser array with supersymmetry matching comprises a topological main array for generating an output light beam by pumping, and a supersymmetry counterpart array coupled with the topological main array; wherein the coupling distance between the topological main array and the supersymmetry counterpart array is regulated, so that high-order modes in the light beam are coupled from the topological main array to the supersymmetry counterpart array through an evanescent wave coupling mechanism, and the lasing threshold of the high-order modes is regulated.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor lasers, and more particularly, to a topologically protected semiconductor laser array with supersymmetry matching. BACKGROUND

[0002] Compared with a single laser unit, a semiconductor laser array has significant advantages in high-power output, thermal management capability, integrated design, etc. However, as the output power increases, the coupling effect between units becomes more and more significant, resulting in the emergence of multiple supermodes, which in turn reduces the beam quality. At the same time, due to the phase mismatch between individual laser units, the existing backward modes will cause the far-field divergence angle to increase and the spot size to be unsatisfactory, which seriously affects the quality and application range of the light beam. Therefore, achieving stable same-direction and single-side mode output of the array has great prospects and significance. SUMMARY

[0003] Therefore, the present disclosure provides a topologically protected semiconductor laser array with supersymmetry matching, which includes a topological main array for generating an output light beam by pumping, and a supersymmetry pair companion array coupled with the topological main array; wherein the coupling distance between the topological main array and the supersymmetry pair companion array is adjusted so that the high-order modes in the light beam are coupled from the topological main array to the supersymmetry pair companion array through an evanescent wave coupling mechanism, and the lasing threshold of the high-order modes is adjusted.

[0004] According to an embodiment of the present disclosure, the first Hamiltonian of the topological main array and the second Hamiltonian of the supersymmetry pair companion array are in a supersymmetry transformation relationship.

[0005] According to an embodiment of the present disclosure, the supersymmetry pair companion array includes a plurality of loss waveguides.

[0006] According to an embodiment of the present disclosure, the number of supersymmetry pair companion arrays is one or two.

[0007] According to an embodiment of the present disclosure, when the number of supersymmetry pair companion arrays is two, the two supersymmetry pair companion arrays are configured to be centered on the topological main array and mirror-distributed on both sides of the topological main array.

[0008] According to an embodiment of the present disclosure, the coupling distances between the two supersymmetry pair companion arrays and the topological main array are the same.

[0009] According to an embodiment of the present disclosure, the topological main array includes a center waveguide and two array-arranged waveguide units configured to be centered on the center waveguide and mirror-distributed on both sides of the center waveguide, and each waveguide unit includes a gain waveguide and a loss waveguide.

[0010] According to an embodiment of the present disclosure, the coupling distance between the gain waveguide and the loss waveguide in each waveguide unit is less than or greater than the coupling distance between two adjacent waveguide units.

[0011] According to an embodiment of the present disclosure, the topological main array comprises a mediocre topological array or a non-mediocre topological array.

[0012] According to an embodiment of the present disclosure, further comprising: a P-type side electrode, an insulating layer, a P-type side waveguide, an active layer, an N-type side waveguide and an N-type side electrode arranged in sequence from top to bottom; wherein the topological main array and the super-symmetry pair companion array are arranged between the insulating layer and the P-type side waveguide.

[0013] The super-symmetry matched topological protection semiconductor laser array provided by the embodiment of the present disclosure has at least the following beneficial effects:

[0014] By adjusting the coupling distance between the topological main array and the super-symmetry pair companion array, the high-order mode is modulated in loss, the lasing threshold of the high-order mode is improved, the stable emission of the fundamental mode is realized, and the quality of the emitted light beam is improved.

[0015] The super-symmetry matched topological protection semiconductor laser array does not need secondary epitaxy technology, and the process cost is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0016] The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of the embodiments of the present disclosure taken in conjunction with the accompanying drawings, in which:

[0017] Figure 1 A structure diagram of a single-side super-symmetry pair matched topological protection semiconductor laser array according to an embodiment of the present disclosure is schematically shown;

[0018] Figure 2 A structure diagram of a double-side super-symmetry matched topological protection semiconductor laser array according to an embodiment of the present disclosure is schematically shown;

[0019] Figure 3 A structure diagram of a topological main array according to an embodiment of the present disclosure is schematically shown;

[0020] Figure 4 A center local enlarged view of a planar mode field diagram of a topological mode according to an embodiment of the present disclosure is schematically shown;

[0021] Figure 5 A relationship diagram between the coupling strength between a single-side super-symmetry pair companion array and a double-side super-symmetry pair companion array and a topological main array and the minimum threshold gain difference between the fundamental mode and the high-order mode according to an embodiment of the present disclosure is schematically shown;

[0022] Figure 6aIllustrating the imaginary part of the propagation constant versus the propagation constant detuning for a single-sided supersymmetric pair companion array and a topological host array coupled with a strength of 300 m -1

[0023] Figure 6b Illustrating the imaginary part of the propagation constant versus the propagation constant detuning for a single-sided supersymmetric pair companion array and a topological host array coupled with a strength of 485 m -1

[0024] Figure 6c Illustrating the imaginary part of the propagation constant versus the propagation constant detuning for a single-sided supersymmetric pair companion array and a topological host array coupled with a strength of 600 m -1

[0025] Figure 6d Illustrating the imaginary part of the propagation constant versus the propagation constant detuning for a single-sided supersymmetric pair companion array and a topological host array coupled with a strength of 700 m -1

[0026] Figure 7a Illustrating the imaginary part of the propagation constant versus the propagation constant detuning for a double-sided supersymmetric pair companion array and a topological host array coupled with a strength of 400 m -1

[0027] Figure 7b Illustrating the imaginary part of the propagation constant versus the propagation constant detuning for a double-sided supersymmetric pair companion array and a topological host array coupled with a strength of 600 m -1

[0028] Figure 7c Illustrating the imaginary part of the propagation constant versus the propagation constant detuning for a double-sided supersymmetric pair companion array and a topological host array coupled with a strength of 880 m -1

[0029] Figure 7d Illustrating the imaginary part of the propagation constant versus the propagation constant detuning for a double-sided supersymmetric pair companion array and a topological host array coupled with a strength of 1000 m -1

[0030] Figure 8 ​​​​​​​​FIG. 20 shows a graph of the minimum threshold gain difference between the fundamental mode and the high order modes for 20000 random error calculations for a single-sided supersymmetrically matched topological protection semiconductor laser array (a) and a double-sided supersymmetrically matched topological protection semiconductor laser array (b) according to embodiments of the present disclosure;

[0031] BRIEF DESCRIPTION OF DRAWINGS

[0032] 1: P-type side electrode; 2: Insulating layer; 3: Waveguide of topological main array region; 31: Central waveguide; 32: Loss waveguide of waveguide unit of topological main array; 33: Gain waveguide of waveguide unit of topological main array; 4: Waveguide of supersymmetrically matched companion array region; 5: P-type side waveguide; 6: Active layer; 7: N-type side waveguide; 8: N-type side electrode; n: Coupling distance between gain waveguide and loss waveguide in each waveguide unit; m: Coupling distance between two adjacent waveguide units; Al: Topological main array under single-sided supersymmetric matching; A2: Supersymmetrically matched companion array under single-sided supersymmetric matching; Bl: Left supersymmetrically matched companion array under double-sided supersymmetric matching; B2: Topological main array under double-sided supersymmetric matching; B3: Right supersymmetrically matched companion array under double-sided supersymmetric matching; w0: Coupling distance between topological main array and supersymmetrically matched companion array under single-sided supersymmetric matching; wl: Coupling distance between topological main array and left supersymmetrically matched companion array under double-sided supersymmetric matching; w2: Coupling distance between topological main array and right supersymmetrically matched companion array under double-sided supersymmetric matching. DETAILED DESCRIPTION

[0033] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It is to be understood, however, that the description is merely exemplary and is intended to provide a thorough understanding of the present disclosure. The following description, given together with the accompanying drawings, is intended to provide a thorough understanding of the present disclosure. However, it is apparent that the one or more embodiments can be implemented without the specific details, as would be apparent to one of ordinary skill in the art. Moreover, in the following description, descriptions of well-known systems and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0034] The terms used herein are merely used to describe specific embodiments, and are not intended to limit the present disclosure. The terms "include", "comprise" and the like used herein indicate the presence of the features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.

[0035] All terms used herein, including technical and scientific terms, have the meanings commonly understood by one of ordinary skill in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted in the context of the present specification, and should not be interpreted in an idealized or overly formal manner.

[0036] In the case of using expressions such as "at least one of A, B, and C", it generally means all of the following: "A alone", "B alone", "C alone", "A and B together", "A and C together", "B and C together", and "A and B and C together", unless otherwise indicated (e.g., "a system having at least one of A, B, and C" shall include, but not be limited to a system having A alone, a system having B alone, a system having C alone, a system having both A and B together, a system having both A and C together, a system having both B and C together, and a system having all of A, B, and C together, etc.).

[0037] Figure 1 A structure diagram of a single-side supersymmetry matched topologically protected semiconductor laser array is schematically shown.

[0038] As Figure 1 shown, the present disclosure provides a supersymmetry matched topologically protected semiconductor laser array, comprising: a topological main array A1 and a supersymmetry matched companion array A2.

[0039] The topological main array A1 is configured to generate an output beam through pumping.

[0040] The supersymmetry matched companion array A2 is coupled to the topological main array.

[0041] By adjusting the coupling distance w0 between the topological main array and the supersymmetry matched companion array, the high-order modes in the output beam are coupled from the topological main array to the supersymmetry matched companion array through evanescent wave coupling mechanism, and the lasing threshold of the high-order modes is adjusted.

[0042] In the embodiments of the present disclosure, the topological main array generally generates a fundamental mode of localized topological boundary state, which can remain stable in the presence of defects or disorder, and provides a high-robustness mode. The generated fundamental mode is mainly concentrated at the central defect in the topological main array, and can preferentially obtain gain and start oscillation at a lower pumping power.

[0043] However, in actual applications, the topological main array generates a certain proportion of high-order mode components while generating the fundamental mode. At this time, the minimum threshold gain difference between the fundamental mode and the high-order mode is small, which limits the stability and range of single-mode operation.

[0044] Based on this, the embodiment introduces the supersymmetry theory based on the topological array, and by setting the supersymmetry pair companion array coupled with the topological main array, when the size of the injected current exceeds the preset value, the loss of the high-order mode can be increased to improve the threshold gain difference between the fundamental mode and the high-order mode, and the stability of single-mode operation in a wider current range is ensured. Specifically, by adjusting the coupling distance between the topological main array and the supersymmetry pair companion array, the evanescent wave coupling strength is controlled, so that the high-order mode in the output light beam is efficiently transferred from the topological main array to the supersymmetry pair companion array through the evanescent wave coupling mechanism, and the lasing threshold of the high-order mode is improved, the emission of the high-order mode is effectively suppressed, and the stable output of the fundamental mode is realized.

[0045] Compared with the traditional semiconductor laser array structure, the embodiment reduces the lateral divergence angle of the array structure and improves the quality of the light beam, and expands the range of single-mode operation. At the same time, without the need for secondary epitaxy technology, the traditional semiconductor processing technology can be used for preparation, so that the process cost is reduced.

[0046] According to the embodiment of the present disclosure, the first Hamiltonian of the topological main array and the second Hamiltonian of the supersymmetry pair companion array are in a supersymmetry transformation relationship.

[0047] In the embodiment of the present disclosure, by QR decomposition of the first Hamiltonian corresponding to the topological main array, an orthogonal matrix Q and an upper triangular matrix R are obtained, the second Hamiltonian of the supersymmetry matching is determined, and the supersymmetry pair companion array is determined according to the determined second Hamiltonian.

[0048] According to the embodiment of the present disclosure, the supersymmetry pair companion array includes a plurality of loss waveguides, which can increase the energy loss of the high-order mode.

[0049] According to the embodiment of the present disclosure, the number of supersymmetry pair companion arrays includes one or two. The number of supersymmetry pair companion arrays can be set as needed. When the number is one, the prepared laser array structure is simple and has a smaller size, and is suitable for fields with slightly lower performance.

[0050] Figure 2 The structure diagram of the double-sided supersymmetry matching topological protection semiconductor laser array of the embodiment of the present disclosure is schematically shown.

[0051] As Figure 2As shown, according to an embodiment of this disclosure, when there are two supersymmetric companion arrays, the two supersymmetric companion arrays B1 and B3 are configured to be mirrored on both sides of the topological master array B2, with the master array as the center. Specifically, the supersymmetric companion array on one side is obtained by performing QR decomposition on the first Hamiltonian corresponding to the topological master array to obtain the orthogonal matrix Q and the upper triangular matrix R, determining the second Hamiltonian for supersymmetric matching, and then determining the supersymmetric companion array based on the determined second Hamiltonian. The supersymmetric companion array on the other side is obtained by mirroring the supersymmetric companion array on the aforementioned side.

[0052] In the embodiments of this disclosure, two supersymmetric pair arrays are used, which can achieve a higher threshold gain difference between the fundamental mode and higher-order modes, resulting in higher stability. The two supersymmetric pair arrays are coupled to the topological master array at the same distances w1 and w2, respectively. By setting the coupling distances between the two supersymmetric pair arrays and the topological master array to be the same, it is ensured that energy is uniformly transferred from the topological master array to the two supersymmetric pair arrays on both sides, reducing phase mismatch, improving the overall stability and single-mode performance of the system, and simplifying the design and manufacturing of the structure.

[0053] Figure 3 A schematic diagram of the structure of the topology master array according to an embodiment of the present disclosure is shown.

[0054] like Figure 3 As shown, according to an embodiment of this disclosure, the main array of the topology includes: a central waveguide 31 and two arrayed waveguide elements. The central waveguide 31 can be a gain waveguide.

[0055] Two arrayed waveguide units are configured to be distributed mirror images of the central waveguide on both sides of the central waveguide. Each waveguide unit includes a gain waveguide 33 and a loss waveguide 32.

[0056] In the embodiments of this disclosure, stable fundamental mode emission is achieved by forming a localized topological boundary state fundamental mode at the central waveguide. The gain waveguide enables the topological boundary state fundamental mode to lase and maintain stable laser output, while the loss waveguide increases the energy loss of higher-order modes. In the topological main array, the mode fields in adjacent waveguides can be coupled via evanescent waves by adjusting the coupling distance between them.

[0057] Meanwhile, the waveguide unit consists of gain waveguides and loss waveguides, and selective pumping maintains PT (parity-time) symmetry. The periodic arrays on both sides can be trivial SSH (Su–Schrieffer–Heeger) model arrays, meaning that there are two alternating coupling distances between the waveguides in the periodic array that satisfy the SSH model, ensuring that the topology mode is not localized on both sides of the main array.

[0058] According to an embodiment of the present disclosure, the coupling distance m between the gain waveguide and the loss waveguide in each waveguide unit is smaller or larger than the coupling distance n between two adjacent waveguide units. The base mode with topological properties can be generated in the topological main array, which has high robustness.

[0059] According to an embodiment of the present disclosure, the topological main array can be a trivial topological array, a non-trivial topological array or other topological array structure. The supersymmetric pair-companion array is obtained by supersymmetric transformation of the corresponding topological main array.

[0060] In an embodiment of the present disclosure, when the topological main array is a trivial topological array, as shown in FIG. 1, the coupling distance between the two waveguide units close to the center waveguide in the two waveguide unit arrays and the center waveguide is equal to the coupling distance n between two adjacent waveguide units, which ensures that the topological defect state is localized in the center waveguide. And the coupling distance m between the gain waveguide and the loss waveguide in each waveguide unit is smaller than the coupling distance n between two adjacent waveguide units. Figure 3

[0061] When the topological main array is a non-trivial topological array, the coupling distance between the two waveguide units close to the center waveguide in the two waveguide unit arrays and the center waveguide is equal to the coupling distance between the gain waveguide and the loss waveguide in each waveguide unit. And the coupling distance m between the gain waveguide and the loss waveguide in each waveguide unit is larger than the coupling distance n between two adjacent waveguide units.

[0062] In some possible embodiments, the etching depth of the gain waveguide and the loss waveguide in the topological main array and the etching depth of the loss waveguide in the supersymmetric pair-companion array are the same.

[0063] The width of the gain waveguide and the loss waveguide in the topological main array and the width of the loss waveguide in the supersymmetric pair-companion array are the same.

[0064] In some possible embodiments, the mode field of the adjacent waveguide in the topological main array and the mode field in the adjacent waveguide in the supersymmetric pair-companion array are coupled by evanescent waves, and the coupling strength can be adjusted by controlling the distance between the adjacent waveguides.

[0065] According to an embodiment of the present disclosure, the supersymmetric matched topological protection semiconductor laser array comprises: P-type side electrode 1, insulating layer 2, P-type side waveguide 5, active layer 6, N-type side waveguide 7 and N-type side electrode 8 arranged in sequence from top to bottom; wherein the topological main array and the supersymmetric pair-companion array are coupled and connected between the P-type side waveguide 5 and the insulating layer 2.

[0066] ​In the examples of the present disclosure, the P-type side electrode 1 and the N-type side electrode 8 are used for the injection of current; the insulating layer 2 is used to form an electrode window between the gain waveguide and the P-type side electrode 1 in the array, or is used to form an electrical isolation on the top of the loss waveguide in the array; the ridge waveguide 3 in the topological main array and the ridge waveguide 4 in the super-symmetry pair companion array are used for the refractive index guiding of the optical field, wherein the top of the electrode window forms an ohmic contact with the P-type side electrode 1; the active layer 6 is used for the carrier recombination to generate photons to provide gain; the P-type side waveguide 5 and the N-type side waveguide 7 are used to expand the mode field and jointly limit the carriers and photons with the active layer 6.

[0067] In the embodiments of the present disclosure, the adjacent waveguides in the topological main array and the adjacent waveguides in the super-symmetry pair companion array are coupled and connected through an isolation region. The high-doped layer of the isolation region is etched away, so that the lateral diffusion of the current is hindered, and the gain and loss contrast is ensured.

[0068] In some possible embodiments, the materials of the P-type side waveguide and the N-type side waveguide can include, but are not limited to, GaN, GaAs, InP or GaSb.

[0069] The structure of the active layer can include, but is not limited to, a single quantum well, a multi-quantum well, a quantum dot or a superlattice structure.

[0070] In some possible embodiments, the etching depth of the ridge waveguide 3 in the topological main array region and the ridge waveguide 4 in the super-symmetry pair companion array region can be 1.6 μm, so that the high-doped layer of the top of the isolation region between the adjacent waveguides is etched away, and the lateral diffusion of the injected current in the gain waveguide is limited. And the refractive index guiding provided by the etching depth of 1.6 μm can improve the optical confinement factor under the premise of better limiting the mode field, and will not cause the increase of the loss because of being too close to the active layer 6.

[0071] The width of the ridge waveguide 3 in the topological main array region and the ridge waveguide 4 in the super-symmetry pair companion array region can be 3 μm, which ensures that the difference between the confinement factors of the fundamental mode and the high-order mode is large, so that the threshold difference is large, and the single-sided mode lasing of a single waveguide can be ensured.

[0072] The number of waveguide units in the waveguide unit in the two array-arranged waveguide units in the topological main array can each be 5, that is, 5 waveguide units are mirror-distributed on both sides of the center waveguide. The number of array-arranged ridge waveguides in the corresponding generated one-side super-symmetry pair companion array is 20. It should be noted that the number of waveguide units is not limited to this, and can be set as required.

[0073] The coupling distance in the topological main array can alternately be 1.3 μm and 2.6 μm, that is, the coupling distance between the gain waveguide and the loss waveguide in the waveguide unit is 1.3 μm, and the coupling distance between two adjacent waveguide units is 2.6 μm. The coupling distance from the waveguide close to the topological main array to the waveguide far from the topological main array in the supersymmetry pair-companion array is 1.3 μm, 2.6 μm, 1.3 μm, 2.6 μm, 1.3 μm, 2.6 μm, 1.3 μm, 2.66 μm, 1.25 μm, 3.9 μm, 1.3 μm, 2.6 μm, 1.3 μm, 2.6 μm, 1.3 μm, 2.6 μm, 1.3 μm, 2.67 μm, and 1.24 μm.

[0074] It should be noted that the etching depth of 1.6 μm is a preferred embodiment, but is not limited thereto, and the waveguide width of 3 μm is a preferred embodiment, but is not limited thereto.

[0075] Figure 4 A center local magnification diagram of a planar mode field diagram of a topological mode according to an embodiment of the present disclosure is schematically shown.

[0076] As shown in Figure 4 , it can be seen that the topological mode is localized in the center region of the topological main array, and the mode field is localized in one unit in the periodic waveguide on both sides, which reflects the property of the topological mode.

[0077] Figure 5 A coupling strength between a single-side supersymmetry pair-companion array and a double-side supersymmetry pair-companion array and a topological main array and a minimum threshold gain difference between a fundamental mode and a high-order mode are schematically shown.

[0078] As shown in Figure 5 , the coupling strength κ between the topological main array and the supersymmetry pair-companion array is controlled by the coupling distance w0 in the single-side supersymmetry matching and the coupling distances w1 and w2 in the double-side supersymmetry matching.

[0079] For the single-side supersymmetry matching, the coupling strength exists in the range of 336 m -1 and 637 m -1 , and there is a step, so that the threshold gain difference is maintained at a large value, but the threshold gain difference on both sides of the step will suddenly decrease, thereby affecting the stability of the device, so that experimental errors and defects can have a greater impact on the device, and the yield is reduced.

[0080] For the double-side supersymmetry matching, although the peak threshold gain difference is slightly lower than that of the single-side supersymmetry matching, the step region range is expanded to more than three times that of the single-side supersymmetry matching, so the robustness is improved.

[0081] Figure 6aThis schematically illustrates a coupling strength of 300m between a single-sided supersymmetric pair array and a topological master array according to an embodiment of the present disclosure. -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant is shown in the figure.

[0082] Figure 6b This schematically illustrates a coupling strength of 485m between a single-sided supersymmetric pair array and a topological master array according to an embodiment of the present disclosure. -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant is shown in the figure.

[0083] Figure 6c This schematically illustrates a coupling strength of 600m between a single-sided supersymmetric pair array and a topological master array according to an embodiment of the present disclosure. -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant is shown in the figure.

[0084] Figure 6d This schematically illustrates a coupling strength of 700m between a single-sided supersymmetric pair array and a topological master array according to an embodiment of the present disclosure. -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant is shown in the figure.

[0085] Depend on Figure 6a , Figure 6b , Figure 6c and Figure 6d As shown, for a one-sided supersymmetric matching, outside the step region, if the coupling strength is 300m... -1 and 700m -1 When higher-order side modes gain gain, their mode fields will be enhanced in the gain waveguide region, increasing the mode field confinement factor and lowering the threshold. This reduces the minimum threshold gain difference between the fundamental mode and other higher-order modes. Therefore, for device stability, the coupling strength can be set to 485m. -1 This corresponds to a coupling distance w0 of 3.2 μm.

[0086] Figure 7a This schematically illustrates a coupling strength of 400m between a bilateral supersymmetric pair array and a topological master array according to an embodiment of the present disclosure. -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant is shown in the figure.

[0087] Figure 7b This schematically illustrates a coupling strength of 600m between a bilateral supersymmetric pair array and a topological master array according to an embodiment of the present disclosure. -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant is shown in the figure.

[0088] Figure 7cFig. 6 schematically shows a diagram of the imaginary part of the propagation constant and the propagation constant detuning when the coupling strength between the double-sided supersymmetric pair-companion array and the topological host array is 880m -1 Fig. 7 schematically shows a diagram of the imaginary part of the propagation constant and the propagation constant detuning when the coupling strength between the double-sided supersymmetric pair-companion array and the topological host array is 1000m

[0089] Figure 7d Fig. 7 schematically shows a diagram of the imaginary part of the propagation constant and the propagation constant detuning when the coupling strength between the double-sided supersymmetric pair-companion array and the topological host array is 1000m -1 Fig. 7 schematically shows a diagram of the imaginary part of the propagation constant and the propagation constant detuning when the coupling strength between the double-sided supersymmetric pair-companion array and the topological host array is 1000m

[0090] As shown in Figure 7a , Figure 7b , Figure 7c and Figure 7d , by using the double-sided supersymmetric matching, the stability is improved compared with the single-sided supersymmetric matching, and the coupling strength can be set to 880m -1 , corresponding to the coupling distances w1 and w2 being 2.5μm, and the performance of the device is more stable.

[0091] Figure 8 Fig. 8 schematically shows a diagram of the number of equidistant intervals of the minimum threshold gain difference between the fundamental mode and the high-order mode after 20000 random error calculations of the topologically protected semiconductor laser array with single-sided supersymmetric matching and the topologically protected semiconductor laser array with double-sided supersymmetric matching according to embodiments of the present disclosure.

[0092] As shown in Figure 8 , where (a) is single-sided supersymmetric matching, and (b) is double-sided supersymmetric matching. The experimental error distribution is considered as a Gaussian distribution, and a total of 20000 random error calculations are randomly performed. The minimum threshold gain difference between the fundamental mode and other high-order modes is statistically calculated.

[0093] It can be seen that the single-sided supersymmetric matching and the double-sided supersymmetric matching model have different distribution conditions. After averaging the results, the minimum threshold gain difference between the fundamental mode and other high-order modes under the single-sided supersymmetric matching and the double-sided supersymmetric matching is 10.20m -1 and 12.67m -1 , respectively.

[0094] Therefore, the double-sided supersymmetric matching design has better stability than the single-sided supersymmetric matching. However, the single-sided supersymmetric matching has a smaller size, and has certain application scenarios under the condition that the performance requirement is not very strict. Therefore, appropriate selection can be made according to application requirements.

[0095] Those skilled in the art can understand that the features recited in various embodiments and / or claims of the present disclosure can be combined and / or integrated in various combinations, even if such combinations or integrations are not expressly recited in the present disclosure. In particular, the features recited in various embodiments and / or claims of the present disclosure can be combined and / or integrated in various combinations without departing from the spirit and teachings of the present disclosure. All such combinations and / or integrations fall within the scope of the present disclosure.

[0096] The above describes embodiments of the present disclosure. However, these embodiments are merely for illustrative purposes, and are not intended to limit the scope of the present disclosure. Although each embodiment is described above separately, this does not mean that the measures in each embodiment cannot be advantageously used in combination. The scope of the present disclosure is defined by the appended claims and their equivalents. Those skilled in the art can make various substitutions and modifications without departing from the scope of the present disclosure, and all such substitutions and modifications shall fall within the scope of the present disclosure.

Claims

1. A topologically protected semiconductor laser array with supersymmetry matching, characterized in that, The application relates to a topological host array for generating an output light beam through pumping, and a supersymmetry partner array arranged in coupling connection with the topological host array. The coupling distance between the topological host array and the supersymmetry partner array is regulated to control the evanescent wave coupling strength, so that high-order modes in the light beam are coupled from the topological host array into the supersymmetry partner array through an evanescent wave coupling mechanism, and the lasing threshold of the high-order modes is regulated to effectively suppress the emission of the high-order modes, thereby realizing the stable output of a basic mode. The topological host array comprises a central waveguide and two array-arranged waveguide units which are configured to be mirror-distributed on both sides of the central waveguide with the central waveguide as the center, and each waveguide unit comprises a gain waveguide and a loss waveguide. The coupling distance between the gain waveguide and the loss waveguide in each waveguide unit is smaller than or larger than the coupling distance between two adjacent waveguide units. In the topological host array, the coupling distance between adjacent waveguides is regulated to realize the mode field coupling between the adjacent waveguides through evanescent wave coupling. The first Hamiltonian of the topological host array and the second Hamiltonian of the supersymmetry partner array are in a supersymmetry transformation relationship. The supersymmetry partner array comprises a plurality of loss waveguides. The number of the supersymmetry partner arrays is one or two.

2. The topologically protected semiconductor laser array of claim 1, wherein, When the number of the supersymmetry partner arrays is two, the two supersymmetry partner arrays are configured to be mirror-distributed on both sides of the topological host array with the topological host array as the center.

3. The topologically protected semiconductor laser array of claim 2, wherein, The coupling distance between the topological host array and each of the two supersymmetry partner arrays is the same.

4. The topologically protected semiconductor laser array of claim 3, wherein, The topological host array comprises a trivial topological array or a non-trivial topological array.

5. The topologically protected semiconductor laser array of claim 4, wherein, The application further relates to a semiconductor laser device comprising a P-type side electrode, an insulating layer, a P-type side waveguide, an active layer, an N-type side waveguide and an N-type side electrode arranged in sequence from top to bottom, wherein the topological host array and the supersymmetry partner array are arranged between the insulating layer and the P-type side waveguide.

6. The topologically protected semiconductor laser array of claim 5, wherein, ​ 7. The topologically protected semiconductor laser array of claim 1, wherein, ​ 8. The topologically protected semiconductor laser array of claim 1, wherein, ​ ​

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