High-temperature-resistant high-precision quartz crystal oscillator

Abstract

The invention relates to the field of electronic components, and discloses a high-temperature-resistant high-precision quartz crystal oscillator. The high-temperature-resistant high-precision quartz crystal oscillator comprises a base, a high-temperature-resistant quartz crystal oscillator, a high-temperature-resistant conductive adhesive, a gold thread, a chip and a sealing cover plate. Wherein the high-temperature-resistant quartz crystal oscillator has the working characteristic of keeping high precision in an ultra-wide working range, the high-temperature-resistant conductive adhesive fixes the chip and the high-temperature-resistant quartz crystal oscillator on the base, the chip is in circuit communication with the base through a gold wire, and the sealing cover plate is connected with the base to form a sealed working environment. The high-temperature-resistant quartz crystal oscillator can meet the requirements of a wide-temperature and high-temperature use environment of-65 DEG C to + 200 DEG C, achieves a wide-temperature working range and a high-temperature-resistant and high-precision frequency output function, and solves the problems that a traditional quartz crystal oscillator is insufficient in high-temperature-resistant capacity and precision.

Description

Technical Field

[0001] The invention relates to the field of electronic components, and in particular to a high-temperature resistant and high-precision quartz crystal oscillator. Background Art

[0002] A quartz crystal oscillator is an electronic component that uses the piezoelectric effect of a quartz crystal to generate a frequency signal. It has the characteristics of high precision, high stability, small size, and light weight. It can generate an oscillation signal with a precise frequency in the circuit. It is an indispensable component in various electronic devices and is widely used in many fields such as communication networks, industrial control, automotive electronics, instrumentation, and military equipment.

[0003] Today's quartz crystal oscillators can guarantee high precision and high stability within the operating temperature range of -55℃ to +125℃, meeting the requirements of use in most fields. However, in special fields such as lunar surface exploration and deep earth exploration where the operating temperature range is required to be between -65℃ and +200℃, existing quartz crystal oscillators cannot guarantee normal operation. In order to meet the needs of these special fields, a high-temperature resistant and high-precision quartz crystal oscillator is proposed. Summary of the invention

[0004] The purpose of the present invention is to provide a high-temperature resistant and high-precision quartz crystal oscillator to solve the problem that the existing quartz crystal oscillator cannot maintain high-precision operation within the operating temperature range of -65°C to +200°C.

[0005] To achieve the above purpose, the technical solution adopted by the present invention is as follows:

[0006] A high-temperature resistant and high-precision quartz crystal oscillator comprises a base, a chip installed in the base, a high-temperature resistant quartz crystal oscillator installed in the base, and a sealing cover plate used for packaging and fixedly connected to the base; at least three supporting ends are provided on the inner surface of the base, two of which are symmetrical to each other at the short side on the left side of the inner surface of the base, and the remaining supporting ends are at the short side on the right side of the inner surface of the base, for realizing a stable connection between the base and the high-temperature resistant quartz crystal oscillator.

[0007] In more detail, the base is divided into an upper base, a middle base and a lower base, which are connected in a multi-layer structure. The lower surface of the upper base is fixedly connected to the upper surface of the middle base, and the lower surface of the middle base is fixedly connected to the upper surface of the lower base; conductive wires are printed between the upper base, the middle base and the lower base to form six conductive paths, one end of the six conductive paths is evenly distributed around the central notch on the upper surface of the middle base, the other ends of four conductive paths are respectively connected to the three-state pin, ground pin, output pin and power pin of the bottom pad of the base, and the other ends of two conductive pathways are respectively connected to the two vibrator test ports on the side of the base and the two support ends on the left side of the inner surface.

[0008] In more detail, the high temperature resistant quartz crystal oscillator includes a high temperature resistant quartz wafer, an upper surface coated electrode, a lower surface coated electrode and an auxiliary electrode; wherein the material of the electrode is silver, gold or aluminum, and the electrode is fixedly connected to the high temperature resistant quartz wafer by chromium; the coverage areas of the upper surface coated electrode and the lower surface coated electrode both exceed the midpoint of the high temperature resistant quartz wafer and are symmetrically distributed with respect to the midpoint; within the range of a rectangle formed with the midpoint of the high temperature resistant quartz wafer as the center and with the set central longitudinal and transverse radii as the radius, the coverage areas of the upper surface coated electrode and the lower surface coated electrode overlap, and other coverage areas do not overlap.

[0009] In more detail, the high temperature resistant quartz wafer is cut and positioned in a special spatial orientation, and the positioning orientation is 36°±20′ rotated around the Z axis of the quartz crystal rod; the high temperature resistant quartz wafer achieves high-precision working characteristics within a temperature range of -65°C to +200°C, and the wafer shape is a rectangle, and the ratio of the length, width and thickness of the quartz wafer rectangle is greater than 10. At the same time, an error-proofing structure is arranged on the high temperature resistant quartz wafer, and the error-proofing structure includes a first direction, which is the length direction of the wafer.

[0010] In more detail, the auxiliary electrode is symmetrically located on the upper and lower surfaces of the high temperature resistant quartz wafer; the auxiliary electrode corresponds to the position of the left supporting end of the inner surface of the base.

[0011] In more detail, the chip integrates six functional terminals, namely, an oscillator output functional terminal, a chip grounding functional terminal, a chip output functional terminal, a chip power functional terminal, a chip three-state functional terminal and an oscillator input functional terminal; the six functional terminals are fixedly connected to the six conductive paths around the middle notch of the middle base through gold wires; the chip is fixedly bonded to the bottom inner surface of the base through high-temperature resistant conductive glue.

[0012] In more detail, the two supporting ends on the left side of the inner surface of the base are fixedly bonded to the secondary electrodes of the high temperature resistant quartz crystal oscillator through high temperature resistant conductive adhesive.

[0013] More specifically, the sealing cover sheet is welded to the base by a high-frequency current parallel sealing welding method to form a sealed environment inside, and the interior is protected by a vacuum or filled with an inert gas.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] In the present invention, the quartz wafer is cut and positioned in a special spatial orientation to obtain a special quartz wafer, and a suitable oscillation circuit is designed and matched, so that the quartz crystal oscillator can work normally in the temperature range of -65°C to +200°C and ensure high precision and high stability. It is superior to traditional quartz crystal oscillators in terms of operating temperature range, frequency accuracy and stability, and the operating temperature range of the quartz crystal oscillator is widened to meet the needs of more fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The overall structure diagram of the present invention is

[0017] Figure 2 This is a cross-sectional view of the external structure of the present invention.

[0018] Figure 3 The bottom view of the external structure of the present invention

[0019] Figure 4 The schematic diagram of the chip connection inside the base of the present invention is

[0020] Figure 5 Schematic diagram of the connection of the high temperature resistant quartz crystal oscillator inside the base of the present invention

[0021] Figure 6 A top view of the structure under the base of the present invention

[0022] Figure 7 A top view of the structure in the base of the present invention

[0023] Figure 8 A top view of the structure on the base of the present invention

[0024] Fig. 9 Schematic diagram of the structure of the high temperature resistant quartz crystal oscillator of the present invention

[0025] In the figure, 1. base, 2. chip, 3. high temperature resistant quartz crystal oscillator, 4. sealing cover, 5. high temperature resistant conductive glue, 6. three-state pin, 7. ground pin, 8. output pin, 9. power pin, 10. oscillator test end, 11. conductive path, 12. lower base, 13. middle base, 14. upper base, 15. support end, 16. high temperature resistant quartz wafer, 17. upper surface plated electrode, 18. lower surface plated electrode, 19. auxiliary electrode. DETAILED DESCRIPTION

[0026] The present invention is further described below in conjunction with the accompanying drawings and embodiments. The embodiments of the present invention include but are not limited to the following embodiments.

[0027] Example

[0028] like Figure 1-Figure 5As shown, a high-temperature resistant and high-precision quartz crystal oscillator comprises a base 1, a chip 2 installed in the base, a high-temperature resistant quartz crystal oscillator 3 installed in the base, and a sealing cover sheet 4 for packaging and fixedly connected to the base 1. There are at least three support ends 15 on the inner surface of the base 1, two of which are symmetrical to each other at the short side on the left side of the inner surface of the base 1, and the remaining support ends 15 are located at the short side on the right side of the inner surface of the base 1, so as to ensure that the high-temperature resistant quartz crystal oscillator will not deviate left and right and tilt up and down during production. The chip 2 and the high-temperature resistant quartz crystal oscillator 3 are respectively installed on the lower bottom surface of the inner surface of the base 1 and the left support end 15 on the inner surface. The sealing cover sheet 4 is welded to the sealing ring of the base 1 by a high-frequency current parallel sealing welding method. During welding, it is in a vacuum environment or an inert gas environment to ensure that a sealed environment in a vacuum state or filled with an inert gas state is formed inside, which plays a role in protecting the chip 2 and the high-temperature resistant quartz crystal oscillator 3. The size after packaging is 3.2mm×2.5mm×1.2mm.

[0029] like Figure 4-Figure 5 As shown, the chip 2 of the integrated circuit is fixedly bonded to the lower bottom surface of the inner surface of the base 1 by means of a high temperature resistant conductive adhesive 5, and the six functional terminals on the chip 2 are respectively connected to the conductive paths 11 of the base 1 by means of gold wires, thereby realizing the electrical connection between the chip 2 and the conductive paths 11. The two pairs of secondary electrodes 19 of the high temperature resistant quartz crystal oscillator 3 are fixedly bonded to the two supporting ends 15 on the left side of the inner surface of the base by means of the high temperature resistant conductive adhesive 5, thereby ensuring the stable electrical connection between the base 1 and the high temperature resistant quartz crystal oscillator 3.

[0030] like Figure 6-Figure 8 As shown, the base 1 is divided into an upper base 14, a middle base 13 and a lower base 12, which are connected in a multi-layer structure. The lower surface of the upper base 14 is fixedly connected to the upper surface of the middle base 13, and the lower surface of the middle base 13 is fixedly connected to the upper surface of the lower base 12. Conductive wires are printed between the upper base 14, the middle base 13 and the lower base 12, and six wire paths 11 are formed. One end of the six conductive paths 11 is evenly distributed around the central notch on the upper surface of the middle base 13, and the other ends of four conductive paths 11 are respectively connected to the three-state pin 6, the ground pin 7, the output pin 8 and the power pin 9 of the bottom pad of the base 1, which play the role of connecting the chip 2 with the bottom pin of the base 1; the other ends of the two conductive paths 11 are respectively connected to the two oscillator test ends 19 on the side of the base 1 and the two support ends 15 on the left side of the inner surface, which play the role of directly testing the high-temperature resistant quartz crystal oscillator 3 after packaging and connecting the high-temperature resistant quartz crystal oscillator 3 with the chip 2.

[0031] like Fig. 9As shown, the high temperature resistant quartz crystal oscillator 2 includes a high temperature resistant quartz wafer 13, an upper surface coating electrode 14, a lower surface coating electrode 15 and two pairs of mutually symmetrical auxiliary electrodes 16. The material of the electrode is silver, gold or aluminum, and the electrode is fixedly connected to the high temperature resistant quartz wafer 13 by chromium. The coverage areas of the upper surface coating electrode 14 and the lower surface coating electrode 15 both exceed the midpoint of the high temperature resistant quartz wafer 13 and are symmetrically distributed with respect to the midpoint. Within the range of a rectangle formed with the midpoint of the high temperature resistant quartz wafer 13 as the center and with the set central longitudinal and transverse radii as the radius, the coverage areas of the upper surface coating electrode 14 and the lower surface coating electrode 15 overlap with each other, and the coverage areas where the upper surface coating electrode 14 and the lower surface coating electrode 15 are connected to the auxiliary electrodes 16 do not overlap. The two pairs of auxiliary electrodes 16 are symmetrically located on the upper and lower surfaces of the high temperature resistant quartz crystal wafer 13 . The auxiliary electrodes 16 correspond to the left support end 11 on the inner surface of the base 1 , and together with the high temperature resistant conductive adhesive 4 , ensure that the circuits of the base 1 and the high temperature resistant quartz crystal oscillator 2 are interconnected.

[0032] The high temperature resistant quartz wafer 13 is cut and positioned in a special spatial orientation, and the cutting and positioning orientation is 36°09′±3′ rotated around the Z axis of the quartz crystal rod. The quartz wafer obtained by cutting in this orientation can work normally in the temperature range of -65°C to +200°C, while maintaining high precision and high stability. The shape of the cut quartz wafer is a rectangle, and the length, width and thickness ratio of the quartz wafer rectangle is greater than 10. At the same time, an error-proofing structure is set on the high temperature resistant quartz wafer 13, and the error-proofing structure includes a first direction, which is the length direction of the wafer.

[0033] Through the above description, a high-temperature resistant and high-precision quartz crystal oscillator of the present invention adopts a specially cut and positioned high-temperature resistant quartz wafer and designs a matching circuit, and at the same time adopts a parallel sealing method to seal the high-temperature resistant quartz crystal oscillator inside the base to form a sealed environment. The high-temperature resistant and high-precision quartz crystal oscillator can work normally within a temperature range of -65°C to +200°C, and maintain high precision and high stability. Compared with the traditional operating temperature of -55°C to +125°C, the operating temperature range is wider, and the frequency accuracy and temperature stability indicators are better. At the same time, the high-temperature resistant and high-precision quartz crystal oscillator of the present invention can be produced in batches, with a high degree of automation and good parameter consistency, and the cost is not increased compared to the traditional quartz crystal oscillator.

[0034] The above embodiment is only one of the embodiments of the present invention, which is only used to help understand the method and core idea of ​​the present invention, and should not be used to limit the protection scope of the present invention. Due to the limitation of textual expression, there are objectively infinite specific structures. As long as no substantial changes or modifications are made without departing from the main design idea and spirit of the present invention, the technical problems solved by them are still consistent with the present invention, and they should be included in the protection scope of the present invention.

Claims

1. A high-temperature resistant and high-precision quartz crystal oscillator, characterized in that: The invention comprises a base (1), a chip (2) installed in the base, a high-temperature resistant quartz crystal oscillator (3) installed in the base, and a sealing cover sheet (4) used for packaging and fixedly connected to the base (1); at least three supporting ends (15) are provided on the inner surface of the base (1), two of which are symmetrical to each other at the left short side of the inner surface of the base (1), and the remaining supporting ends (15) are provided at the right short side of the inner surface of the base (1), so as to realize a stable connection between the base (1) and the high-temperature resistant quartz crystal oscillator (3).

2. A high temperature resistant and high precision quartz crystal oscillator according to claim 1, characterized in that: The base (1) is divided into an upper base (14), a middle base (13) and a lower base (12), and is a multi-layer structure connection. The lower surface of the upper base (14) is fixedly connected to the upper surface of the middle base (13), and the lower surface of the middle base (13) is fixedly connected to the upper surface of the lower base (12); conductive lines are printed between the upper base (14), the middle base (13) and the lower base (12) to form six conductive paths (11); one end of the six conductive paths (11) is evenly distributed around the central notch of the upper surface of the middle base (13); the other ends of four conductive paths (11) are respectively connected to the three-state pin (6), the ground pin (7), the output pin (8) and the power pin (9) of the bottom pad of the base (1); the other ends of two conductive paths (11) are respectively connected to the two oscillator test ends (10) on the side of the base (1) and the two support ends (15) on the left side of the inner surface.

3. A high temperature resistant and high precision quartz crystal oscillator according to claim 1, characterized in that: The high temperature resistant quartz crystal oscillator (3) comprises a high temperature resistant quartz wafer (16), an upper surface coating electrode (17), a lower surface coating electrode (18) and an auxiliary electrode (19); wherein the material of the electrode is silver, gold or aluminum, and the electrode is fixedly connected to the high temperature resistant quartz wafer (16) by chromium; the coverage areas of the upper surface coating electrode (17) and the lower surface coating electrode (18) both exceed the midpoint of the high temperature resistant quartz wafer (16) and are symmetrically distributed with respect to the midpoint; within the range of a rectangle formed with the midpoint of the high temperature resistant quartz wafer (16) as the center and with the set center longitudinal and transverse radii as the radius, the coverage areas of the upper surface coating electrode (17) and the lower surface coating electrode (18) overlap, and other coverage areas do not overlap.

4. A high temperature resistant and high precision quartz crystal oscillator according to claim 3, characterized in that: The high temperature resistant quartz wafer (16) is cut and positioned in a special spatial orientation, and the positioning orientation is 36°±20′ rotated around the Z axis of the quartz crystal rod; the high temperature resistant quartz wafer (16) realizes high-precision working characteristics within a temperature range of -65°C to +200°C, and the wafer shape is rectangular, and the ratio of the length, width and thickness of the quartz wafer rectangle is greater than 10. At the same time, an error-proofing structure is arranged on the high temperature resistant quartz wafer (16), and the error-proofing structure includes a first direction, and the first direction is the length direction of the wafer.

5. A high temperature resistant and high precision quartz crystal oscillator according to claim 3, characterized in that: The auxiliary electrode (19) is symmetrically located on the upper and lower surfaces of the high-temperature resistant quartz wafer (16); the auxiliary electrode (19) corresponds to the position of the left support end (15) on the inner surface of the base (1).

6. A high temperature resistant and high precision quartz crystal oscillator according to claim 1, characterized in that: The chip (2) is integrated with six functional terminals, namely, an oscillator output functional terminal, a chip grounding functional terminal, a chip output functional terminal, a chip power functional terminal, a chip three-state functional terminal and an oscillator input functional terminal; The six functional ends are respectively fixedly connected to the six conductive paths (11) around the middle notch of the middle base (1) through gold wires; the chip (2) is fixedly bonded to the lower inner surface of the base (1) through high temperature resistant conductive adhesive (5).

7. The high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The two support ends (15) on the left side of the inner surface of the base (1) are fixedly bonded to the secondary electrode (19) of the high temperature resistant quartz crystal oscillator (3) via high temperature resistant conductive adhesive (5).

8. The high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The sealing cover sheet (4) is welded to the base (1) by a high-frequency current parallel sealing welding method, forming a sealed environment inside, and the inside is protected by a vacuum or filled with an inert gas.

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