A DUV LED optoelectronic integrated device capable of carrier cyclic injection

Abstract

This invention relates to a DUV LED optoelectronic integrated device capable of carrier cyclic injection. It consists of a laterally integrated SBD and a DUV LED. The SBD, along its epitaxial growth direction, sequentially comprises: a substrate, a buffer layer, and an N-Al layer. x Ga 1‑x N layers, intrinsic Al y Ga 1‑y The DUV LED comprises, along the epitaxial growth direction, an N-absorbing layer, a first N-ohmic electrode, and a Schottky electrode; the DUV LED includes, in sequence, a substrate, a buffer layer, and an N-Al absorption layer. x Ga 1‑x N layers, intrinsic Al y Ga 1‑y The invention comprises an N-absorbing layer, an N-semiconductor transport layer, a multiple quantum well layer, a P-type electron blocking layer, a P-semiconductor transport layer, and a second N-ohmic electrode and a P-ohmic electrode. This invention enables photoelectric conversion, allowing holes to be cyclically injected into the LED, thus improving injection efficiency. Driven by alternating current, it operates with low heat generation and low power consumption. Furthermore, this invention is a homogeneous integration, with a simple process flow and low cost.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to a DUVLED optoelectronic integrated device capable of carrier cyclic injection. Background Technology

[0002] Gallium nitride (GaN) possesses advantages such as a large bandgap, high mobility, high breakdown voltage, and high energy conversion efficiency, thus having broad application prospects in semiconductor light-emitting devices and electronic power devices. In the field of semiconductor light-emitting devices, GaN-based DUV LEDs are gradually replacing mercury-based ultraviolet light sources due to their long lifespan, high reliability, and energy efficiency. In the field of electronic power devices, GaN's breakdown electric field strength is much higher than that of silicon, allowing GaN-based devices to operate at higher voltages while maintaining low leakage current, making it an ideal material for fabricating high-performance SBDs (Schottky diodes). Therefore, the homogeneous integration of DUV LEDs and SBDs with photoelectric conversion functions in this invention is feasible.

[0003] Traditional DUV LEDs are generally powered by DC and operate at relatively low voltages, typically 3-5V. Therefore, to achieve widespread adoption, traditional DUV LEDs are usually connected to LED drivers (transformers and AC-DC converters), which increases circuit complexity and technical difficulty. To address this issue, a relatively novel solution is to integrate DUV LEDs with SBDs. However, the DUV LEDs in this solution suffer from problems such as high Mg activation energy and low hole mobility, making it difficult to achieve high injection efficiency. Summary of the Invention

[0004] To address the problems of low injection efficiency and inability to directly connect to AC power in existing DUV LED technologies, this invention provides a DUV LED optoelectronic integrated device capable of carrier cyclic injection. This device integrates a Signal-Based Block (SBD) on a standalone LED, allowing the LED to be directly connected to AC power. A waveguide layer is grown between the LED and the SBD, allowing light emitted from the LED to pass through the waveguide layer and enter the SBD, forming a photoelectric effect and generating electron-hole pairs. Under the influence of an external electric field and a polarization electric field, the SBD acquires photoelectric conversion capabilities, achieving hole cyclic injection into the active region of the LED, thus improving the hole injection efficiency. This invention has the following advantages: a) It achieves photoelectric conversion, enabling cyclic hole injection into the LED and improving injection efficiency; b) It can operate with low heat generation and low power consumption under AC power; c) Homogeneous integration, simple process flow, and low cost.

[0005] To achieve the above objectives, the following technical solution is adopted:

[0006] A DUV LED optoelectronic integrated device capable of carrier cyclic injection is provided, comprising: a buffer layer (2) on a substrate (1), wherein N-Al is distributed on the surface of the buffer layer (2). x Ga 1-x N layer (3), N-Al x Ga 1-x The N-layer (3) consists of two parts, a ring-shaped N-Al x Ga 1-x The N layer (3) is located at the outer edge of the buffer layer (2), and the circular N-Al x Ga 1-x The N-layer (3) is located at the center of the buffer layer (2), with a waveguide layer (10) between them; wherein, the circular N-Al x Ga 1-x The central part of the upper surface of layer N (3) is a circular intrinsic Al. y Ga 1- y N-absorbing layer (4); cyclic N-Al x Ga 1-x The N-layer (3) contains intrinsic Al y Ga 1-y N-absorbing layer (4), intrinsic Al y Ga 1-y The N-absorbing layer (4) is topped by an N-semiconductor transport layer (5); the N-semiconductor transport layer (5) is divided into two layers of the same thickness, with the outer edge of the upper layer cut off. Above the uncut portion, there are, in sequence, a multi-quantum well layer (6), a P-type electron blocking layer (7), and a P-semiconductor transport layer (8); an annular second N-ohmic electrode (12) is provided on the upper surface of the cut-off portion; the inner side of the upper surface of the P-semiconductor transport layer (8) is a P-ohmic electrode (14);

[0007] Circular N-Al x Ga 1-x The outer surface of the upper surface of the N layer (3) is covered with a first N-ohm electrode (11); between the P-ohm electrode (14) and the first N-ohm electrode (11), there is an interconnect metal (13);

[0008] Circular intrinsic Al y Ga 1-y The Schottky electrode (15) on the N-absorbing layer (4) is circular at its center; the diameter of the Schottky electrode (15) is circular, which is the intrinsic Al. y Ga 1-y The N-absorbing layer (4) has a diameter of 60%–90%; the intrinsic Al is circular. y Ga 1-y The N-absorbing layer (4) has a circular diameter N-Al x Ga 1-xThe diameter of layer N (3) is 20% to 80%;

[0009] P-semiconductor transport layer (8), circular N-Al x Ga 1-x N-layer (3), circular intrinsic Al y Ga 1-y The exposed portions of the N-absorbing layer (4) and the N-semiconductor transport layer (5), as well as the sidewalls above the buffer layer (2), are all covered with an insulating layer;

[0010] N-Al x Ga 1-x The projected area of ​​layer N (3) is 20% to 80% of the area of ​​buffer layer (2); the annular N-Al x Ga 1-x N-layer (3) and circular N-Al x Ga 1-x The spacing of the N layer (3) is 50–200 μm;

[0011] The exposed area of ​​the upper layer of the N-semiconductor transport layer (5) is 20% to 80% of the projected area of ​​the N-semiconductor transport layer (5);

[0012] The waveguide layer (10) is made of SiO2 or Al2O3 and has a thickness of 500nm to 5μm.

[0013] The interconnecting metal (13) is made of Ni / Au, Cr / Au or Ni / Al;

[0014] The insulating layer (9) is made of SiO2 or Al2O3 and has a thickness of 500 nm to 5 μm.

[0015] The first N-ohm electrode (11) is made of Al / Au, Cr / Au or Ti / Al / Ti / Au; the Schottky electrode (15) is made of Ni / Au;

[0016] The material of the second N-ohmic electrode (12) is Al / Au, Cr / Au or Ti / Al / Ti / Au; the material of the P-ohmic electrode (14) is Ni / Au;

[0017] The substrate (1) is made of sapphire, AlN, GaN, Si or SiC, and is divided into polar substrate and semi-polar substrate according to the epitaxial growth direction.

[0018] The buffer layer (2) is made of AlN and has a thickness of 500 nm to 5 μm.

[0019] The N-Al x Ga 1-xThe N layer (3) has a composition coefficient of 0.5≤x≤0.8 and 0.2≤1-x≤0.5, and a thickness of 500nm~5μm;

[0020] The intrinsic Al y Ga 1-y The N-absorbing layer (4) has a composition coefficient of 0≤y≤0.4, 0.6≤1-y≤1, and a thickness of 5nm~5μm, where x>y;

[0021] The N-semiconductor transport layer (5) is made of Al. x1 Ga 1-x1 N, with coefficients of each component being 0.5≤x1≤0.8 and 0.2≤1-x1≤0.5, and a thickness of 5nm~5μm;

[0022] The middle and edge regions of the multi-quantum-well layer (6) are etched, and its projected area is consistent with the area of ​​the upper layer of the N-semiconductor transport layer (5). Its structure is Al. x2 Ga 1-x2 N / Al x3 Ga 1-x3 N, where the coefficients of each component are 0.55≤x2≤0.8, 0.2≤1-x2≤0.45, 0.45≤x3≤0.6, and 0.4≤1-x3≤0.55, where x2>x3; the band gap of the quantum barrier is greater than the band gap of the quantum well, the number of quantum wells is greater than or equal to 1, and the quantum barrier Al x2 Ga 1-x2 The thickness of N is 5–50 nm, and the quantum well Al x3 Ga 1-x3 The thickness of N is 1–20 nm;

[0023] The P-type electron blocking layer (7) is made of Al. x4 Ga 1-x4 N, with each component having a content of 0.55≤x4≤1 and 0≤1-x4≤0.45, and a thickness of 30nm~5μm;

[0024] The P-semiconductor transport layer (8) is made of Al. x5 Ga 1-x5 N, with a composition of 0.4≤x5≤1, 0≤1-x5≤0.6, and a thickness of 100nm~5μm;

[0025] A method for fabricating a DUV LED optoelectronic integrated device that enables carrier cyclic injection, the specific steps of which are as follows:

[0026] An initial substrate is grown along the epitaxial growth direction using either molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) equipment. Then, by etching selected areas, each layer of the laterally integrated DUV LED and SBD with photoelectric conversion function is formed on the device.

[0027] The essential features of this invention are:

[0028] In this invention, based on the homogeneous integration of DUV LED and SBD, a waveguide layer is grown between the DUV LED and SBD. Light emitted from the DUV LED passes through the waveguide layer and enters the SBD. After absorbing photons, the SBD generates electron-hole pairs, thus fabricating an SBD with photoelectric conversion function. Its main working principle is: the intrinsic Al of the SBD... y Ga 1-y The Al composition of the N-absorbing layer (4) is lower than that of the Al composition in the multi-quantum-well layer. x3 Ga 1-x3 The Al component of N, thus making the SBD intrinsic Al y Ga 1-y The N-absorbing layer (4) absorbs the light emitted by the DUV LED, generating a photoelectric effect and forming electron-hole pairs. Under the action of an external electric field and a polarization electric field, photoelectric conversion is achieved, promoting hole circulation and improving injection efficiency.

[0029] The beneficial effects of the present invention are as follows:

[0030] (1) This invention discloses a DUV LED optoelectronic integrated device that enables carrier cyclic injection. Based on the existing homogeneous integration of DUV LED and SBD, this invention adopts Al x Ga 1-x N / Al y Ga 1-y SBDs were fabricated using N-type heterojunction structures, in which intrinsic Al y Ga 1-y The N-absorbing layer (4) has a low Al content, which causes the SBD to absorb light, thereby generating electron-hole pairs. Under the action of an applied electric field and a polarization electric field, photoelectric conversion is achieved, promoting hole cycling (see...). Figure 9 This improves the injection efficiency of DUV LEDs by approximately 20% (see...). Figure 10 ).

[0031] (2) In addition, traditional LEDs are generally powered by DC and have a low operating voltage, usually 3-5V. Therefore, in order to achieve widespread adoption and application, traditional DUV LEDs are usually connected to LED drivers (transformers and AC-DC converters), which increases circuit complexity and technical difficulty. However, this invention integrates DUV LEDs with SBDs that have photoelectric conversion functions. By utilizing the unidirectional conductivity of SBDs, this invention can work directly under AC power.

[0032] (3) The DUV LED optoelectronic integrated device of the present invention can realize carrier cyclic injection. It adopts a homogeneous integration method, which is simple to manufacture, easy to operate, highly repeatable, and low in production cost. Attached Figure Description

[0033] Figure 1 The images show a top view and a front view of the DUV LED optoelectronic integrated device with carrier cyclic injection obtained in the embodiment.

[0034] Figure 2 This is a cross-sectional view of the DUV LED optoelectronic integrated device that enables carrier cyclic injection obtained in the embodiment.

[0035] Figure 3 This is a schematic diagram of the initial substrate structure in this invention.

[0036] Figure 4 In this invention, intrinsic Al is exposed through photolithography and deep etching. y Ga 1-y Schematic diagram of the N-absorbing layer.

[0037] Figure 5 This is a schematic diagram illustrating how individual devices are isolated using photolithography and etching in this invention.

[0038] Figure 6 This is a schematic diagram of exposing one side of the LED to the N-semiconductor transport layer through photolithography and etching in this invention, and a schematic diagram of exposing the middle of the SBD to the N-semiconductor transport layer through photolithography and etching.

[0039] Figure 7 In this invention, the SBD intermediate to intrinsic Al is exposed through photolithography and etching. y Ga 1-y Schematic diagram of the N-absorber layer.

[0040] Figure 8 This is a schematic diagram of the growth of insulating and waveguide layers by photolithography and ALD in this invention.

[0041] Figure 9 This is a schematic diagram illustrating the principle of photoelectric conversion, promoting hole circulation, and improving injection efficiency in this invention.

[0042] Figure 10 This is a diagram showing the lateral hole concentration of the quantum well in the DUV LED of this invention.

[0043] In the figure, 1. substrate, 2. buffer layer, 3. N-Al x Ga 1-x N layers, 4. Intrinsic Al y Ga 1-y 5. N-absorbing layer, 6. N-semiconductor transport layer, 7. Multiple quantum well layer, 8. P-type electron blocking layer, 9. P-semiconductor transport layer, 10. Insulating layer, 11. Waveguide layer, 12. First N-ohm electrode, 13. Second N-ohm electrode, 14. Interconnect metal, 15. P-ohm electrode, 16. Schottky electrode. Detailed Implementation

[0044] The present invention will be further described below with reference to embodiments and accompanying drawings, but this should not be construed as limiting the scope of protection of the claims of this application.

[0045] like Figure 1 and Figure 2 As shown, the DUV LED optoelectronic integrated device of the present invention, which enables carrier cyclic injection, has the following structure:

[0046] The substrate (1) has a buffer layer (2), and the surface of the buffer layer (2) is covered with N-Al. x Ga 1-x N layer (3), N-Al x Ga 1-x The N-layer (3) consists of two parts, a ring-shaped N-Al x Ga 1-x The N layer (3) is located at the outer edge of the buffer layer (2), and the circular N-Al x Ga 1-x The N-layer (3) is located at the center of the buffer layer (2), with a waveguide layer (10) between them; wherein, the circular N-Al x Ga 1-x The central part of the upper surface of layer N (3) is a circular intrinsic Al. y Ga 1-y N-absorbing layer (4); cyclic N-Al x Ga 1-x The N-layer (3) contains intrinsic Al y Ga 1-y N-absorbing layer (4), intrinsic Al y Ga 1-yThe N-absorbing layer (4) is topped by an N-semiconductor transport layer (5); the N-semiconductor transport layer (5) is divided into two layers of the same thickness, with the outer edge of the upper layer cut off. Above the uncut portion, there are, in sequence, a multi-quantum well layer (6), a P-type electron blocking layer (7), and a P-semiconductor transport layer (8); an annular second N-ohmic electrode (12) is provided on the upper surface of the cut-off portion; the inner side of the upper surface of the P-semiconductor transport layer (8) is a P-ohmic electrode (14);

[0047] Waveguide layer (10) and adjacent exposed circular N-Al x Ga 1-x The upper surface of the N layer (3) is covered with a first N-ohm electrode (11); the sidewall between the P-ohm electrode (14) and the first N-ohm electrode (11) is covered with an interconnect metal (13);

[0048] Circular intrinsic Al y Ga 1-y The Schottky electrode (15) on the N-absorbing layer (4) is circular at its center; the diameter of the Schottky electrode (15) is circular, which is the intrinsic Al. y Ga 1-y The N-absorbing layer (4) is 60-90% of the diameter; the intrinsic Al is circular. y Ga 1-y The N-absorbing layer (4) has a circular diameter N-Al x Ga 1-x 20-80% of the diameter of layer N (3);

[0049] Semiconductor transport layer (8), circular N-Al x Ga 1-x N-layer (3), circular intrinsic Al y Ga 1-y The exposed portions of the N-absorbing layer (4) and the N-semiconductor transport layer (5), as well as the sidewalls above the buffer layer (2), are all covered with an insulating layer;

[0050] Al x Ga 1-x The projected area of ​​layer N (3) is 20% to 80% of the area of ​​buffer layer (2); the annular N-Al x Ga 1-x N-layer (3) and circular N-Al x Ga 1-x The spacing of the N layer (3) is 50–200 μm;

[0051] The buffer layer (2) is made of AlN and has a thickness of 2μm;

[0052] The exposed area of ​​the upper layer of the N-semiconductor transport layer (5) is 20%-80% of the projected area of ​​the N-semiconductor transport layer (5);

[0053] In summary, the circular SBD comprises, along the epitaxial growth direction, the following components in sequence: a substrate (1), a buffer layer (2), and an N-Al layer. x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y The annular DUV LED comprises, along with an N-absorbing layer (4), a first N-ohmic electrode (11), and a Schottky electrode (15), and is further comprising, along the epitaxial growth direction, a substrate (1), a buffer layer (2), and an N-Al layer (4). x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y The structure comprises an N-absorbing layer (4), an N-semiconductor transport layer (5), a multi-quantum well layer (6), a P-type electron blocking layer (7), a P-semiconductor transport layer (8), a second N-ohmic electrode (12), and a P-ohmic electrode (14).

[0054] Substrate (1), buffer layer (2), N-Al x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y The N-absorbing layer (4), N-semiconductor transport layer (5), multiple quantum well layer (6), P-type electron blocking layer (7), P-semiconductor transport layer (8), and insulating layer (9) are arranged sequentially along the epitaxial growth direction.

[0055] Figure 1 The structure shown indicates that, in this invention, a second N-ohm electrode (12) and a P-ohm electrode (14) are grown on the surface of a DUV LED by electron beam evaporation; a first N-ohm electrode (11) and a Schottky electrode (15) are grown on the surface of an SBD; and an interconnect metal (13) is grown between the DUV LED and the SBD.

[0056] Example 1

[0057] A DUV LED optoelectronic integrated device capable of carrier cyclic injection includes an annular DUV LED laterally integrated on the same substrate, an SBD at the center, a waveguide layer (10) located between the two, and an interconnecting metal (13) (in the form of a sidewall portion + annular portion) connecting a first N-ohm electrode and a P-ohm electrode.

[0058] The DUV LED, along the epitaxial growth direction, sequentially includes a substrate (1), a buffer layer (2), and an N-Al layer. x Ga 1-x N-layer (3), intrinsic Aly Ga 1-y N-absorbing layer (4), N-semiconductor transport layer (5); wherein the substrate diameter is 1500 μm; N-Al x Ga 1-x In layer N(3), x represents the aluminum composition, and x = 0.5, intrinsic Al y Ga 1-y In the N-absorbing layer (4), y represents the aluminum composition, and y = 0.4; the N-semiconductor transport layer (5) is divided into two parts, with the lower layer completely covering the intrinsic Al. y Ga 1-y The N-absorbing layer (4) has a thickness of 0.5 μm; the projected area of ​​the upper layer is 80% of the area of ​​the lower layer, and the thickness is 0.5 μm. The total thickness of the N-semiconductor transport layer (5) is 1 μm. The upper layer of the N-semiconductor transport layer (5) consists of a multi-quantum well layer (6), a P-type electron blocking layer (7), and a P-semiconductor transport layer (8). The multi-quantum well layer (6) contains six quantum barriers Al with a thickness of 10 nm. x2 Ga 1-x2 N and five quantum wells Al with a thickness of 3 nm. x3 Ga 1-x3 N, x2 represents the Al composition of the quantum barrier, and x2 = 0.55; x3 represents the Al composition of the quantum well, and x3 = 0.45; P-type electron blocking layer (7) Al x4 Ga 1-x4 In N, x4 represents the Al composition, and x4 = 0.6, with a thickness of 30 nm; P-semiconductor transport layer (8) Al x5 Ga 1-x5 In N, x5 represents the Al composition, and x5 = 0.4. The outer side of its upper surface is a ring-shaped high dielectric constant insulating layer as a current limiting hole. Its material is SiO2, the thickness is 0.5μm, and the width of the ring is 50μm. The ring-shaped P-ohmic electrode (14) is located on the inner side of the upper surface of the P-semiconductor transport layer (8). The ring-shaped second N-ohmic electrode (12) is located in the center of the upper surface of the N-semiconductor transport layer (5), and the width is 50μm.

[0059] The SBD, along the epitaxial growth direction, sequentially includes a substrate (1), a buffer layer (2), and an N-Al layer. x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y N-absorbing layer (4); wherein, N-Al x Ga 1-x The N layer (3) is represented by x, where x = 0.5, and its thickness is 0.5 μm; intrinsic Al y Ga 1-yThe N-absorbent layer (4) uses y to represent the Al component, and y = 0.4. Its projected area is N-Al. x Ga 1-x 80% of the N layer (3) has a thickness of 2 μm; intrinsic Al y Ga 1-y The outer side of the upper surface of the N-absorbing layer (4) is a ring-shaped high-dielectric-constant insulating layer serving as a current-limiting hole. This layer is made of SiO2, has a thickness of 0.5 μm, and a ring width of 5 μm. N-Al x Ga 1-x The inner side of the upper surface of layer N (3) is an annular high dielectric constant insulating layer serving as a current-limiting hole. The material is SiO2, the thickness is 0.5μm, and the width of the annulus is 10μm. The circular Schottky electrode (15) is located on the intrinsic Al y Ga 1-y The N-absorbing layer (4) is located at the center of its upper surface, with a diameter of 90 μm; the annular first N-ohmic electrode (11) is located at the center of the N-Al layer. x Ga 1-x The outer side of the upper surface of layer N (3) has a width of 50 μm.

[0060] The waveguide layer (10) is on the buffer layer (2) and located between the LED and the SBD. It is made of SiO2 and has a thickness of 0.5 μm. The interconnect metal (13) is grown on the inner wall of the annular LED and the waveguide layer, connecting the first N-ohm electrode and the P-ohm electrode. It is made of Ni / Au.

[0061] The method for fabricating a DUV LED optoelectronic integrated device capable of carrier cyclic injection is as follows:

[0062] In the first step, the substrate (1) was baked at a high temperature of 1300℃ in an MOCVD furnace to remove foreign matter from the surface of the substrate (1). Then, a buffer layer (2) and an N-Al layer were grown. x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y The structure consists of an N-absorbing layer (4), an N-semiconductor transport layer (5), a multi-quantum well layer (6), a P-type electron blocking layer (7), and a P-semiconductor transport layer (8); wherein the substrate (1) has a thickness of 3 μm, the buffer layer (2) has a thickness of 2 μm, and the N-Al layer has a thickness of 1 μm. x Ga 1-x The N layer (3) has a thickness of 0.5 μm and intrinsic Al. y Ga 1-yThe N-absorbing layer (4) has a total thickness of 2 μm, the N-semiconductor transport layer (5) has a total thickness of 1 μm, the multiple quantum well layer (6) has a thickness of 75 nm, the P-type electron blocking layer (7) has a thickness of 30 nm, and the P-semiconductor transport layer (8) has a thickness of 100 nm; Figure 3 As shown;

[0063] The second step involves selectively etching the substrate obtained in the first step down to N-Al using photolithography and etching processes. x Ga 1-x The position of layer N (3) makes the intrinsic Al y Ga 1-y The N-absorbing layer (4) and the epitaxial layers above it are divided into a circular central region and an annular edge region, wherein the diameter of the central circle is 300 μm and the etching depth is 3.205 μm; Figure 4 As shown;

[0064] The third step involves applying N-Al to the substrate obtained in the second step. x Ga 1-x On the N layer (3), steps are created by photolithography and etching to expose the epitaxial structure of the buffer layer (2), making the N-Al x Ga 1-x Layer N (3) is divided into a circular central region and an annular edge region, wherein the diameter of the central circle is 500 μm and the etching depth is 0.5 μm; as Figure 5 As shown;

[0065] In the fourth step, on the substrate obtained in the third step, an epitaxial wafer structure with an N-semiconductor transport layer (5) exposed on the LED side and the N-semiconductor transport layer (5) exposed in the middle of the SBD is formed by photolithography and dry etching processes, wherein the etching depth is 0.705 μm; Figure 6 As shown;

[0066] The fifth step involves exposing intrinsic Al in the center of the SBD on the substrate obtained in the fourth step using photolithography and etching processes. y Ga 1-y The epitaxial structure of the N-absorbing layer (4); wherein the etching depth is 0.5 μm; as shown Figure 7 As shown;

[0067] Step 6: On the substrate obtained in step 5, a SiO2 insulating layer (9) and a SiO2 waveguide layer (10) are grown by photolithography, ALD, and PECVD; the thickness of the SiO2 insulating layer is 0.5 μm; Figure 8 As shown;

[0068] The seventh step involves selectively creating SiO2 pores on the substrate obtained in the sixth step using an etching technique.

[0069] Step 8: On the substrate obtained in step 7, the electrodes of the LED and SBD, as well as the interconnect metal, are deposited by vapor deposition (13).

[0070] This results in a DUV LED optoelectronic integrated device capable of carrier cyclic injection, according to the present invention.

[0071] Figure 10 The figure shows the lateral hole concentration distribution of the quantum well in the DUV LED and SBD integrated structure obtained by simulation calculation using Crosslight's APSYS software. As can be seen from the figure, the hole concentration is increased by about 20% after the light-absorbing layer absorbs light. It can be seen that the device structure we proposed can effectively improve the hole injection efficiency of the device.

[0072] In this invention, the DUV LED is connected in series with the SBD. When working, the Schottky electrode is connected to the positive terminal of the power supply, and the second N-ohm electrode is connected to the negative terminal of the power supply. After the device is turned on, the LED emits ultraviolet light. The ultraviolet light enters the SBD through the waveguide layer and is absorbed by the intrinsic absorption layer of the SBD. The absorption of photons generates electron-hole pairs. The holes move under the action of the electric field. The moving holes pass through the interconnect metal and return to the P-semiconductor transport layer of the DUV LED. This is hole cycling, which improves the injection efficiency of the DUV LED by about 20%.

[0073] Example 2

[0074] A DUV LED optoelectronic integrated device capable of carrier cyclic injection includes an annular DUV LED laterally integrated on the same substrate, an SBD at the center, a waveguide layer (10) located between the two, and an interconnecting metal (13) (in the form of a sidewall portion + annular portion) connecting a first N-ohm electrode and a P-ohm electrode.

[0075] The DUV LED, along the epitaxial growth direction, sequentially includes a substrate (1), a buffer layer (2), and an N-Al layer. x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y N-absorbing layer (4), N-semiconductor transport layer (5); wherein the substrate diameter is 1500 μm; N-Al x Ga 1-x In layer N(3), x represents the aluminum composition, and x = 0.6, intrinsic Al y Ga 1-y In the N-absorbing layer (4), y represents the aluminum composition, and y = 0.4; the N-semiconductor transport layer (5) is divided into two parts, with the lower layer completely covering the intrinsic Al. y Ga 1-yThe N-absorbing layer (4) has a thickness of 0.5 μm; the projected area of ​​the upper layer is 80% of the area of ​​the lower layer, and the thickness is 0.5 μm. The total thickness of the N-semiconductor transport layer (5) is 1 μm. The upper layer of the N-semiconductor transport layer (5) consists of a multi-quantum well layer (6), a P-type electron blocking layer (7), and a P-semiconductor transport layer (8). The multi-quantum well layer (6) contains six quantum barriers Al with a thickness of 10 nm. x2 Ga 1-x2 N and five quantum wells Al with a thickness of 3 nm. x3 Ga 1-x3 N, x2 represents the Al composition of the quantum barrier, and x2 = 0.55; x3 represents the Al composition of the quantum well, and x3 = 0.45; P-type electron blocking layer (7) Al x4 Ga 1-x4 In N, x4 represents the Al composition, and x4 = 0.6, with a thickness of 30 nm; P-semiconductor transport layer (8) Al x5 Ga 1-x5 In N, x5 represents the Al composition, and x5 = 0.4. The outer side of its upper surface is a ring-shaped high dielectric constant insulating layer as a current limiting hole. Its material is SiO2, the thickness is 0.5μm, and the width of the ring is 50μm. The ring-shaped P-ohmic electrode (14) is located on the inner side of the upper surface of the P-semiconductor transport layer (8). The ring-shaped second N-ohmic electrode (12) is located in the center of the upper surface of the N-semiconductor transport layer (5), and the width is 50μm.

[0076] The SBD with photoelectric converter function includes, along the epitaxial growth direction, a substrate (1), a buffer layer (2), and an N-Al layer. x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y N-absorbing layer (4); wherein, N-Al x Ga 1-x The N layer (3) is represented by x, where x = 0.6, and its thickness is 0.5 μm; intrinsic Al y Ga 1-y The N-absorbent layer (4) uses y to represent the Al component, and y = 0.4. Its projected area is N-Al. x Ga 1-x 80% of the N layer (3) has a thickness of 2 μm; intrinsic Al y Ga 1-y The outer side of the upper surface of the N-absorbing layer (4) is a ring-shaped high-dielectric-constant insulating layer serving as a current-limiting hole. This layer is made of SiO2, has a thickness of 0.5 μm, and a ring width of 5 μm. N-Al x Ga 1-xThe inner side of the upper surface of layer N (3) is an annular high dielectric constant insulating layer serving as a current-limiting hole. The material is SiO2, the thickness is 0.5μm, and the width of the annulus is 10μm. The circular Schottky electrode (15) is located on the intrinsic Al y Ga 1-y The N-absorbing layer (4) is located at the center of its upper surface, with a diameter of 90 μm; the annular first N-ohmic electrode (11) is located at the center of the N-Al layer. x Ga 1-x The outer side of the upper surface of layer N (3) has a width of 50 μm.

[0077] The waveguide layer (10) is on the buffer layer (2) and located between the LED and the SBD. It is made of SiO2 and has a thickness of 0.5 μm. The interconnect metal (13) is grown on the inner wall of the annular LED and the waveguide layer, connecting the first N-ohm electrode and the P-ohm electrode. It is made of Ni / Au.

[0078] The method for fabricating a DUV LED optoelectronic integrated device capable of carrier cyclic injection is as follows:

[0079] In the first step, the substrate (1) was baked at a high temperature of 1300℃ in an MOCVD furnace to remove foreign matter from the surface of the substrate (1). Then, a buffer layer (2) and an N-Al layer were grown. x Ga 1-x N-layer (3), intrinsic Al y Ga 1-y The structure consists of an N-absorbing layer (4), an N-semiconductor transport layer (5), a multi-quantum well layer (6), a P-type electron blocking layer (7), and a P-semiconductor transport layer (8); wherein the substrate (1) has a thickness of 3 μm, the buffer layer (2) has a thickness of 2 μm, and the N-Al layer has a thickness of 1 μm. x Ga 1-x The N layer (3) has a thickness of 0.5 μm and intrinsic Al. y Ga 1-y The N-absorbing layer (4) has a total thickness of 2 μm, the N-semiconductor transport layer (5) has a total thickness of 1 μm, the multiple quantum well layer (6) has a thickness of 75 nm, the P-type electron blocking layer (7) has a thickness of 30 nm, and the P-semiconductor transport layer (8) has a thickness of 100 nm; Figure 3 As shown;

[0080] The second step involves selectively etching the substrate obtained in the first step down to N-Al using photolithography and etching processes. x Ga 1-x The position of layer N (3) makes the intrinsic Al y Ga 1-yThe N-absorbing layer (4) and the epitaxial layers above it are divided into a circular central region and an annular edge region, wherein the diameter of the central circle is 300 μm and the etching depth is 3.205 μm; Figure 4 As shown;

[0081] The third step involves applying N-Al to the substrate obtained in the second step. x Ga 1-x On the N layer (3), steps are created by photolithography and etching to expose the epitaxial structure of the buffer layer (2), making the N-Al x Ga 1-x Layer N (3) is divided into a circular central region and an annular edge region, wherein the diameter of the central circle is 500 μm and the etching depth is 0.5 μm; as Figure 5 As shown;

[0082] In the fourth step, on the substrate obtained in the third step, an epitaxial wafer structure with an N-semiconductor transport layer (5) exposed on the LED side and the N-semiconductor transport layer (5) exposed in the middle of the SBD is formed by photolithography and dry etching processes, wherein the etching depth is 0.705 μm; Figure 6 As shown;

[0083] The fifth step involves exposing intrinsic Al in the center of the SBD on the substrate obtained in the fourth step using photolithography and etching processes. y Ga 1-y The epitaxial structure of the N-absorbing layer (4); wherein the etching depth is 0.5 μm; as shown Figure 7 As shown;

[0084] Step 6: On the substrate obtained in step 5, a SiO2 insulating layer (9) and a SiO2 waveguide layer (10) are grown by photolithography, ALD, and PECVD; the thickness of the SiO2 insulating layer is 0.5 μm; Figure 8 As shown;

[0085] The seventh step involves selectively creating SiO2 pores on the substrate obtained in the sixth step using an etching technique.

[0086] Step 8: On the substrate obtained in step 7, the electrodes of the LED and SBD, as well as the interconnect metal, are deposited by vapor deposition (13).

[0087] This results in a DUV LED optoelectronic integrated device capable of carrier cyclic injection, according to the present invention.

[0088] In this invention, Embodiment 1 and Embodiment 2 show similar improvements in DUV LED injection efficiency, both around 20%.

[0089] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the claims of the present invention.

[0090] Matters not covered in this invention are common knowledge.

Claims

1. A DUV LED optoelectronic integrated device capable of carrier cyclic injection, characterized in that: The device consists of: a buffer layer (2) on a substrate (1), and N-Al distributed on the surface of the buffer layer (2). x Ga 1-x N layer (3), N-Al x Ga 1-x The N-layer (3) consists of two parts, a ring-shaped N-Al x Ga 1-x The N layer (3) is located at the outer edge of the buffer layer (2), and the circular N-Al x Ga 1-x The N-layer (3) is located at the center of the buffer layer (2), with a waveguide layer (10) between them; wherein, the circular N-Al x Ga 1-x The central part of the upper surface of layer N (3) is a circular intrinsic Al. y Ga 1-y N-absorbing layer (4); cyclic N-Al x Ga 1-x The N-layer (3) contains a ring-shaped intrinsic Al. y Ga 1-y N-absorbing layer (4), intrinsic Al y Ga 1-y The N-absorbing layer (4) is topped by an N-semiconductor transport layer (5); the N-semiconductor transport layer (5) is divided into two layers of equal thickness, with the outer edge of the upper layer cut off. Above the uncut portion, there are, in sequence, a multi-quantum well layer (6), a P-type electron blocking layer (7), and a P-semiconductor transport layer (8); an annular second N-ohmic electrode (12) is provided on the upper surface of the cut-off portion; the inner side of the upper surface of the P-semiconductor transport layer (8) is a P-ohmic electrode (14). Circular N-Al x Ga 1-x The exposed portion of the upper surface of the N layer (3) is covered with a first N-ohm electrode (11); between the P-ohm electrode (14) and the first N-ohm electrode (11), there is an interconnect metal (13). Circular intrinsic Al y Ga 1-y A circular Schottky electrode (15) is centered on the N-absorber layer (4); the diameter of the Schottky electrode (15) is the intrinsic Al of a circle. y Ga 1-y The N-absorbing layer (4) has a diameter of 60%–90%; the intrinsic Al is circular. y Ga 1-y The N-absorbing layer (4) has a circular diameter N-Al x Ga 1-x The diameter of layer N (3) is 20% to 80%; P-semiconductor transport layer (8), circular N-Al x Ga 1-x N layers (3), circular intrinsic Al y Ga 1-y The exposed portions of the N-absorbing layer (4) and the N-semiconductor transport layer (5), as well as the sidewalls above the buffer layer (2), are all covered with an insulating layer; The N-Al x Ga 1-x The N layer (3) has a composition coefficient of 0.5≤x≤0.8 and 0.2≤1-x≤0.5, and a thickness of 500 nm~5 μm; The intrinsic Al y Ga 1-y The N-absorbing layer (4) has a composition coefficient of 0≤y≤0.4, 0.6≤1-y≤1, and a thickness of 5 nm~5 μm, where x> y; The N-semiconductor transport layer (5) is made of Al. x1 Ga 1-x1 N, with component coefficients of 0.5≤x1≤0.8 and 0.2≤1-x1≤0.5, and a thickness of 5 nm~5 μm; The material of the multiple quantum well layer (6) is Al. x2 Ga 1-x2 N / Al x3 Ga 1-x3 N, where the coefficients of each component are 0.55≤x2≤0.8, 0.2≤1-x2≤0.45, 0.45≤x3≤0.6, and 0.4≤1-x3≤0.55, where x2>x3; the band gap of the quantum barrier is greater than the band gap of the quantum well, the number of quantum wells is greater than 1, and the quantum barrier Al x2 Ga 1-x2 The thickness of N is 5–50 nm, and the quantum well Al x3 Ga 1-x3 The thickness of N is 1–20 nm.

2. The DUV LED optoelectronic integrated device capable of carrier cyclic injection as described in claim 1, characterized in that it is N-Al x Ga 1-x The projected area of ​​layer N (3) is 20% to 80% of the area of ​​buffer layer (2); the annular N-Al x Ga 1-x N-layer (3) and circular N-Al x Ga 1-x The spacing of the N layer (3) is 50–200 μm; The exposed area of ​​the upper layer of the N-semiconductor transport layer (5) is 20% to 80% of the projected area of ​​the N-semiconductor transport layer (5).

3. The DUV LED optoelectronic integrated device capable of carrier cyclic injection as described in claim 1, characterized in that: The waveguide layer (10) is made of SiO2 or Al2O3. 3， Its thickness is 500 nm to 5 μm; The interconnecting metal (13) is made of Ni / Au, Cr / Au or Ni / Al; The insulating layer (9) is made of SiO2 or Al2O3 and has a thickness of 500 nm to 5 μm. The first N-ohm electrode (11) is made of Al / Au, Cr / Au or Ti / Al / Ti / Au; the Schottky electrode (15) is made of Ni / Au; The material of the second N-ohmic electrode (12) is Al / Au, Cr / Au or Ti / Al / Ti / Au; the material of the P-ohmic electrode (14) is Ni / Au; The substrate (1) is made of sapphire, AlN, GaN, Si or SiC, and is divided into polar substrate and semi-polar substrate according to the epitaxial growth direction. The buffer layer (2) is made of AlN and has a thickness of 500 nm to 5 μm.

4. The DUV LED optoelectronic integrated device capable of carrier cyclic injection as described in claim 1, characterized in that: The P-type electron blocking layer (7) is made of Al. x4 Ga 1-x4 N, with each component having a content of 0.55≤x4≤1 and 0≤1-x4≤0.45, and a thickness of 30 nm~5 μm; The P-semiconductor transport layer (8) is made of Al. x5 Ga 1-x5 N, with a composition of 0.4≤x5≤1, 0≤1-x5≤0.6, and a thickness of 100 nm~5 μm.

5. The method for fabricating a DUV LED optoelectronic integrated device capable of carrier cyclic injection as described in claim 1, characterized in that: Includes the following steps: An initial substrate is grown along the epitaxial growth direction using either molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) equipment. Then, by etching selected areas, each layer of a DUV LED optoelectronic integrated device capable of carrier cyclic injection is formed on the device.

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