Gas injection apparatus, substrate processing apparatus, and thin film deposition method

Abstract

The invention provides a gas injection apparatus, an apparatus for processing a substrate, and a method for depositing a thin film, and particularly relates to a gas injection apparatus for injecting a gas onto a substrate to deposit a thin film, an apparatus for processing a substrate, and a method for depositing a thin film. A gas injection device according to an exemplary embodiment includes a first plate in which a first gas supply path and a second gas supply path are provided to be separated from each other, and a second plate having a first gas supply hole and a second gas supply hole respectively connected to the first gas supply path and the second gas supply path, the second plate is spaced apart from the first plate and has a plurality of openings alternately arranged with the first gas supply holes and the second gas supply holes.

Description

Technical Field

[0001] The present disclosure relates to a gas injection device, a substrate processing equipment and a thin film deposition method, and in particular to a gas injection device for depositing a thin film by injecting gas onto a substrate, a substrate processing equipment and a thin film deposition method. Background Art

[0002] Generally, a semiconductor device or a display device is manufactured by depositing various materials in a thin film shape on a substrate and patterning the deposited thin film. To this end, multiple stages of different processes such as a deposition process, an etching process, a cleaning process, and a drying process are performed.

[0003] Here, a deposition process is performed on a substrate to form a thin film having characteristics required for a semiconductor device or a display device. Such a deposition process is generally performed by an apparatus for processing a substrate, in which a process gas is sprayed using a gas spraying apparatus having a plurality of spray holes formed therein to form a thin film on the substrate through a chemical reaction.

[0004] As described above, when a thin film is formed on a substrate using a gas injection device having a plurality of injection holes formed therein, ensuring deposition uniformity is a very important issue. Therefore, the demand for a gas injection device having an improved opening structure to uniformly deposit a thin film continues to increase.

[0005] (Related technical documents)

[0006] Korean Patent Publication No. 10-2004-0104197. Summary of the invention

[0007] Technical issues

[0008] The present disclosure provides a gas injection device capable of depositing a uniform thin film, an apparatus for processing a substrate, and a method for depositing a thin film.

[0009] Technical Solution

[0010] According to an exemplary embodiment, a gas injection device includes: a first plate in which a first gas supply path and a second gas supply path are arranged to be separated from each other, and the first plate has a first gas supply hole and a second gas supply hole connected to the first gas supply path and the second gas supply path, respectively; and a second plate, which is spaced apart from the first plate and has a plurality of openings alternately arranged with the first gas supply hole and the second gas supply hole.

[0011] The second plate may be disposed to be spaced apart from the first plate at an interval of 1 mm to 3 mm.

[0012] The opening may include: a first opening defined at one side of the first plate; and a second opening connected to the first opening and having a diameter greater than that of the first opening.

[0013] The first opening may have a diameter of 1 mm to 3 mm.

[0014] The second opening may have a diameter of 10 mm to 14 mm.

[0015] The opening may further include a third opening configured to connect the first opening and the second opening between the first opening and the second opening.

[0016] The third opening may have a shape in which a cross section gradually increases toward the second opening.

[0017] The second opening may have a length of 25 mm to 75 mm.

[0018] The second plate may have a thickness of 35 mm to 100 mm.

[0019] The openings may be arranged at intervals of 12 mm to 20 mm.

[0020] The first opening and the second opening may have different lengths from each other.

[0021] The first opening may have a length that is longer than a length of the second opening.

[0022] The second opening may have a length that is longer than a length of the first opening.

[0023] According to another exemplary embodiment, an apparatus for processing a substrate includes: a chamber; a substrate supporting device installed in the chamber to support the substrate; a gas injection device as described above, installed in the chamber to inject gas to the substrate supporting device; and a power supply device connected to the gas injection device to supply power to the gas injection device.

[0024] The first board and the second board may be electrically insulated from each other, and the power supply device may be connected to the second board to supply power to the second board.

[0025] The power supply device may be configured to supply power to the first board and the second board.

[0026] According to still another exemplary embodiment, a method of depositing a thin film by using the above-mentioned gas injection device, wherein a first gas is supplied through a first gas supply path and a second gas is supplied through a second gas supply path, to deposit a thin film on a substrate.

[0027] At least one of the first gas and the second gas may be supplied to deposit a thin film on the substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

[0028] The thin film may include an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a thin film with a high dielectric constant (high-K), a silicon dioxide (SiO2) thin film, and at least one of a silicon nitride (SiN) thin film.

[0029] Beneficial Effects

[0030] According to example embodiments, the interval between openings through which a process gas is injected may be minimized to improve deposition uniformity.

[0031] In addition, the hollow cathode effect can be utilized to generate high-density plasma, thus enabling the formation of high-quality thin films. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic diagram of an apparatus for processing a substrate according to an exemplary embodiment.

[0033] Figure 2 is a view illustrating an arrangement structure of openings in a gas injection device according to an exemplary embodiment.

[0034] Figure 3 is a view illustrating a process of forming a supply hole and an opening in a gas injection device according to an exemplary embodiment. DETAILED DESCRIPTION

[0035] Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, the present invention may be implemented in different forms and should not be construed as being limited to the exemplary embodiments set forth herein. Instead, these embodiments are provided so that the present invention will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0036] It will be understood that when a layer, film, region, or substrate is referred to as being “on” another, it can be directly on the other, or one or more intervening layers, films, regions, or substrates may also be present.

[0037] In addition, as shown in the drawings, spatially relative terms such as "above" or "upper" and "below" or "lower" may be used herein to easily describe the relationship of one element or feature to another element or features. It will be understood that the spatially relative terms are intended to cover different orientations of the device when in use or operation in addition to the orientation depicted in the figures. In the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Like reference numerals represent like elements throughout the application.

[0038] Figure 1 is a schematic diagram of an apparatus for processing a substrate according to an exemplary embodiment. Figure 2 is a view showing an arrangement structure of openings in a gas injection device according to an exemplary embodiment, Figure 3 is a view illustrating a process of forming a supply hole and an opening in a gas injection device according to an exemplary embodiment.

[0039] Reference Figures 1 to 3 , an apparatus for processing a substrate according to an exemplary embodiment includes: a chamber 10; a substrate supporting device 20 disposed in the chamber 10 and installed in the chamber 10 to support a substrate S disposed in the chamber 10; a gas injection device 300 installed in the chamber 10 to inject gas to the substrate supporting device 20; and a power supply device 400 connected to the gas injection device 300 to supply power for generating plasma in the chamber to the gas injection device 300. In addition, the apparatus for processing a substrate may further include a control device (not shown) for controlling the power supply device 400.

[0040] The chamber 10 provides a predetermined reaction space and is maintained as a sealed reaction space. The chamber 10 may include: a body 14, which includes a flat portion approximately in a circular or square shape and a sidewall extending upward from the flat portion, and has a predetermined reaction space; and a cover 12, which has an approximately circular or square shape and is disposed on the body 14 to seal the reaction space. However, the chamber 10 is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate S.

[0041] A discharge port (not shown) may be provided on a predetermined area of ​​the bottom surface of the chamber 10, and a discharge pipe (not shown) connected to the discharge port may be provided outside the chamber 10. In addition, the discharge pipe may be connected to a discharge device (not shown). A vacuum pump such as a turbomolecular pump may be used as a discharge device. Therefore, the interior of the chamber may be evacuated to a predetermined pressure of, for example, 0.1 mTorr or less by the discharge device under a predetermined reduced pressure atmosphere. The discharge pipe may be installed not only on the bottom surface of the chamber 10, but also on the side surface of the chamber 10, below the substrate support device 20 (described later). In addition, a plurality of discharge pipes and discharge devices corresponding thereto may be further installed to reduce the discharge time.

[0042] The substrate S disposed in the chamber 10 may be placed on the substrate support device 20 to perform a substrate processing process, such as a thin film deposition process. As described above, the substrate support device 20 may include an electrostatic chuck to adsorb and hold the substrate S by using an electrostatic force, thereby placing and supporting the substrate S. Alternatively, the substrate support device 20 may support the substrate S by vacuum adsorption or mechanical force.

[0043] The substrate support device 20 may be configured to be a shape corresponding to the shape of the substrate S, such as a circular shape or a rectangular shape. The substrate support device 20 may include a substrate support 22 on which the substrate S is placed and a lifter 24 disposed below the substrate support 22 to lift the substrate support 22. Here, the substrate support 22 may be made larger than the substrate S, and the lifter 24 may be configured to support at least one region of the substrate support 22, such as a central portion. When the substrate S is placed on the substrate support 22, the substrate support 22 may move to approach the gas injection device 300. In addition, a heater (not shown) may be installed in the substrate support 22. The heater generates heat to a predetermined temperature to heat the substrate support 22 and the substrate S placed on the substrate support 22, thereby uniformly depositing a thin film on the substrate S.

[0044] A gas supply device may be installed in the cover 12 of the chamber 10. The gas supply device may be installed to pass through the cover 12 of the chamber 10, and may include a first gas supply part 110 and a second gas supply part 120 to provide the first gas and the second gas to the gas injection device 300, respectively. Here, the first gas may include a source gas, and the second gas may include a reaction gas. However, it is not limited to this, and the first gas may include a reaction gas, the second gas may include a source gas, or at least one of the first gas and the second gas may include a mixed gas in which the source gas and the reaction gas are mixed. In addition, at least one of the first gas and the second gas may be a purge gas. That is, each of the first gas supply part and the second gas supply part may not necessarily provide a gas. For example, each of the first gas supply part and the second gas supply part may be configured to supply multiple gases at the same time, or to supply a gas selected from the multiple gases.

[0045] The gas injection device 300 is installed inside the chamber 10, for example, on the bottom surface of the cover 12, and a first gas supply path for injecting a first gas and supplying the first gas onto the substrate and a second gas supply path for injecting a second gas and supplying the second gas onto the substrate may be provided in the gas injection device 300. The first gas supply path and the second gas supply path may be provided to be separated independently from each other so that the first gas and the second gas are separated from each other in the gas injection device 300 without mixing with each other and then supplied onto the substrate.

[0046] In more detail, the gas injection device 300 includes: a first plate, in which the first gas supply path and the second gas supply path are set to be separated from each other, and the first plate has first gas supply holes 312 and second gas supply holes 314 connected to the first gas supply path and the second gas supply path, respectively; and a second plate 330, which is spaced apart from the first plate and has a plurality of openings 332 arranged alternately with the first gas supply holes 312 and the second gas supply holes 314.

[0047] The first plate may include an upper frame 310 and a lower frame 320. Here, the upper frame 310 is detachably coupled to the bottom surface of the cover body 12, and at the same time, a portion of the top surface of the upper frame 310, for example, a central portion of the top surface of the upper frame 310 is spaced apart from the bottom surface of the cover body 12 by a predetermined distance. Therefore, the first gas supplied from the first gas supply part may diffuse into the space between the top surface of the upper frame 310 and the bottom surface of the cover body 12. In addition, the lower frame 320 is installed to be spaced apart from the bottom surface of the upper frame 310 by a predetermined distance. Therefore, the second gas supplied from the second gas supply part 120 may diffuse into the space between the top surface of the lower frame 320 and the bottom surface of the upper frame 310. The upper frame 310 and the lower frame 320 may be connected to each other along the peripheral surface to provide a spaced space therein, and may be integrated with each other, and the upper frame 310 and the lower frame 320 may have a structure to seal the peripheral surface by the first sealing member 350. Here, the first sealing member 350 may be made of an insulating material to electrically insulate the upper frame 310 from the lower frame 320 , or conversely, may be made of a conductive material to electrically connect the upper frame 310 to the lower frame 320 .

[0048] In the first gas supply path, the first gas supplied from the first gas supply part 110 may diffuse into the space between the bottom surface of the cover body 12 and the upper frame 310 to pass through the upper frame 310 and the lower frame 320, and then be supplied into the chamber 10. Here, the first gas supply hole 312 may be connected to the first gas supply path, and may be defined to pass through the upper frame 310 and the lower frame 320 to be isolated from the space between the top surface of the upper frame 310 and the bottom surface of the cover body 12 at the lower portion of the space between the top surface of the upper frame 310 and the bottom surface of the cover body 12 from the top surface of the lower frame 320 and the bottom surface of the upper frame 310.

[0049] In addition, in the second gas supply path, the second gas supplied from the second gas supply part 120 may be diffused into the space between the bottom surface of the upper frame 310 and the top surface of the lower frame 320 to pass through the lower frame 320 and then be supplied into the chamber 10. Here, the second gas supply hole 322 may be defined to be connected to the second gas supply path, and may be defined to pass through the lower frame 320 at a lower portion of the space between the upper frame 310 and the bottom surface.

[0050] Therefore, the first gas supply path and the second gas supply path may not communicate with each other, and the first gas and the second gas may be each supplied to the lower side from the gas supply device via the first plate.

[0051] The second plate 330 may be installed to be spaced apart from the lower side of the lower frame 320. That is, the second plate 330 is installed at a predetermined distance D1 from the bottom surface of the lower frame 320. Therefore, the first gas and the second gas supplied downward via the first plate may diffuse into the space between the top surface of the second plate 330 and the bottom surface of the lower frame 320. The lower frame 320 and the second plate 330 may be connected along the peripheral surface and integrated with each other to provide a separation space therein, but may be configured to seal the peripheral surface by the second sealing member 360. Here, the second sealing member 360 may be made of an insulating material to electrically insulate the lower frame 320 from the second plate 330, or conversely, the second sealing member 360 may be made of a conductive material to electrically connect the lower frame 320 to the second plate 330.

[0052] Here, the second plate 330 may be installed to be spaced apart downward from the first plate by a distance at which a plasma sheath region defined on a surface of the first plate (i.e., the bottom surface of the lower frame 320) and a plasma sheath region defined on a surface of the second plate 330 (i.e., the top surface of the second plate 330) overlap each other. Here, the plasma sheath region refers to a dark field area where positive (+) ions are concentrated between plasma and the surface of the structure for energy exchange, but plasma is hardly generated.

[0053] If the plasma sheath region defined on the bottom surface of the lower frame 320 and the plasma sheath region defined on the top surface of the second plate 330 do not overlap with each other, plasma may be generated between the plasma sheath regions. However, in this embodiment, since the lower frame 320 and the second plate 330 are disposed to be spaced apart from each other by a distance at which the plasma sheath region defined on the bottom surface of the lower frame 320 and the plasma sheath region defined on the top surface of the second plate 330 overlap with each other, plasma can be prevented from being generated between the bottom surface of the lower frame 320 and the top surface of the second plate 330.

[0054] As described above, since the first gas and the second gas supplied downward via the first plate are bound to diffuse into the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330, the bottom surface of the lower frame 320 and the top surface of the second plate 330 need to be spaced apart from each other so that the gas flows smoothly. Therefore, the second plate 330 may be spaced apart from the first plate by a distance of 1 mm to 3 mm. When the second plate 330 is set to be spaced apart from the first plate by a distance less than 1 mm, the gas may not flow smoothly between the bottom surface of the lower frame 320 and the top surface of the second plate 330, and when the second plate 330 is set to be spaced apart from the first plate by a distance exceeding 3 mm, the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330 may generate plasma, thereby generating particles, thereby causing process defects.

[0055] In addition, the second plate 330 has a plurality of openings 332 arranged alternately with the first gas supply holes 312 and the second gas supply holes 322 as described above. Figure 2 As shown, when the first plate and the second plate 330 are viewed from the top or the bottom, the openings 332 may be defined in the second plate 330 so as not to overlap with any of the first gas supply holes 312 and the second gas supply holes 322. When the first plate and the second plate 330 are viewed from the top or the bottom, the plurality of openings 332 may be defined between the first gas supply holes 312 and the second gas supply holes 322 in at least one direction. In addition, the plurality of openings 332 may be defined as being provided at a central position between the first gas supply holes 312 and the second gas supply holes 322 in at least one direction.

[0056] If the openings 332 are set to overlap with the first gas supply holes 312 and the second gas supply holes 314, most of the gas supplied from the first gas supply holes 312 and the second gas supply holes 314 may be ejected by passing through the openings defined to overlap with the first gas supply holes 312 and the second gas supply holes 314. However, not all of the gas is ejected downward by passing through the openings 332, and a portion of the gas is not directly ejected to the openings 332, but may flow to the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330, and then stagnate in the space. Because the stagnant gas hinders the smooth flow of the gas to generate particles, in this embodiment, a plurality of openings 332 may be defined in the second plate 330 to be alternately arranged with the first gas supply holes 312 and the second gas supply holes 322.

[0057] like Figure 3As shown, the openings 332 may include: a first opening 333, which is defined at one side of the first plate; and a second opening 335, which is connected to the first opening 333 and has a diameter larger than that of the first opening 333. That is, each opening 332 may include a first opening 333 defined as a predetermined length H1 from the top surface of the second plate 330 and a second opening defined as a predetermined length H2 from the bottom surface of the second plate 330. Here, the first opening 333 is a gas inlet, and the gas diffused into the space between the bottom surface of the lower frame 320 and the top surface of the second plate 330 may be introduced into the opening 332 through the first opening 333. On the other hand, the second opening 335 is a gas outlet, and the gas introduced into the opening 332 is ejected to the lower side of the second plate 330 through the second opening 335. The first openings 333 may be alternately disposed with the first gas supply holes 312 and the second gas supply holes 322, and the second openings 335 may extend to the lower side of the first openings 333 to have a larger diameter than the first openings 333. Each opening 332 may further include a third opening 334 connecting the first openings 333 and the second openings 335 therebetween.

[0058] The first opening 333 guides the gas diffused between the bottom surface of the lower frame 320 and the top surface of the second plate 330 to the second opening 335 at the lower part. As described above, the first opening 333 has a diameter D2, and the diameter D2 is selected to uniformly introduce the gas diffused between the bottom surface of the lower frame 320 and the top surface of the second plate 330 into each second opening 335. Here, the first opening 333 may have a diameter D2, and the plasma sheath region is defined therein. That is, in the first opening 333, the plasma sheath region that can be defined on the inner surface of the second plate 330 defining the first opening 333 completely overlaps to define a plasma sheath in which plasma is hardly generated. To this end, the first opening 333 may have a diameter D2 of 1 mm to 3 mm. When the diameter D2 of the first opening 333 is less than 1 mm, the gas cannot flow smoothly through the first opening 333, and when the diameter D2 exceeds 3 mm, the first opening 333 may generate plasma, thereby causing blockage caused by particles. As described above, the first opening 333 may be defined to have a length H1 of 10 mm to 25 mm from the top surface of the second plate 330 .

[0059] The third opening 334 is used to smoothly transfer the gas supplied through the first opening 333 to the second opening 335 from the lower side of the first opening 333. The third opening 334 may have a shape whose cross section increases from the lower end of the first opening 333 to the upper end of the second opening 335, and thus, the gas supplied through the first opening 333 may be guided through the third opening 334 without stagnation and then smoothly transferred to the second opening 335. However, the third opening 334 may not be necessary, and if the third opening 334 is omitted, the second opening 335 may be directly connected to the lower side of the first opening 333.

[0060] The second opening 335 is connected to the lower side of the first opening 333 or the lower side of the third opening 334. The second opening 335 generates plasma by a hollow cathode effect that vibrates electrons in a cylindrical electrode. That is, the second opening 335 provides a large surface area to promote plasma ionization of the gas introduced into the second opening 335, thereby generating high-density plasma.

[0061] The second opening 335 may have a diameter D3 of 10 mm to 14 mm. If the diameter D3 of the second opening 335 is less than 10 mm, it is difficult to produce a hollow cathode effect, and therefore, high-density plasma may not be generated. In addition, when the diameter D3 of the second opening 335 exceeds 14 mm, the interval between the second openings 335 may be increased to deposit a uniform film. When the distance between the second openings 335 increases, the gas ejected from each second opening 335 will be concentrated at a predetermined position on the substrate S, which causes non-uniform deposition. However, if the distance between the second openings 335 is reduced, the gas ejected from each second opening 335 may overlap on the substrate S to deposit a more uniform film. In order to deposit a uniform film on the substrate S, the second openings 335 may need to be arranged at intervals of 12 mm to 20 mm, and when the diameter D3 of the second opening 335 is controlled to be below 14 mm, the second openings 335 may be arranged at intervals of 12 mm to 20 mm to improve deposition uniformity.

[0062] The second opening 335 may have a length H2 of 25 mm to 75 mm. That is, the second opening 335 may be set to a length H2 of 25 mm to 75 mm from the bottom surface of the second plate 330 upward. If the length H2 of the second opening 335 is less than 25 mm, sufficient hollow cathode effect may not be generated. On the other hand, when the length H2 of the second opening 335 exceeds 75 mm, the ions generated in the second opening 335 may collide with the inner surface of the second plate 330 that defines the second opening 335, thereby damaging the hole due to sputtering. Therefore, the second opening 335 may have a length H2 of 25 mm to 75 mm.

[0063] As described above, the first opening 333 may have a length H1 of 10 mm to 25 mm. In addition, the second opening 335 may have a length H2 of 25 mm to 75 mm. Therefore, the second plate 330 may be set to a thickness of 35 mm to 100 mm. If the second plate 330 is set to a thickness of less than 35 mm, the second plate 330 may sag due to its own weight, and if the second plate 330 is set to a thickness of more than 100 mm, the weight will increase, and too much space in the chamber 10 will be occupied, thereby deteriorating the structural efficiency, and therefore, the second plate 330 may be set to a thickness of 35 mm to 100 mm.

[0064] The length H1 of the first opening 333 and the length H2 of the second opening 335 can be adjusted within a set thickness range of the second plate 330. That is, the length H1 of the opening 333 and the length H2 of the second opening 335 can be adjusted differently or the same.

[0065] For example, the length H1 of the first opening 333 may be longer than the length H2 of the second opening 335 to increase the density of plasma within the set thickness range of the second plate 330. If the thickness of the second plate 330 is set to a thickness of 35 mm to 100 mm, and the length of the second opening 335 is set to a length H2 of 25 mm, the first opening 333 may be set to a length H1 exceeding 25 mm and less than or equal to 75 mm to increase the density of plasma.

[0066] In addition, in order to reduce the density of plasma within the set thickness range of the second plate 330, the length H1 of the first opening 333 may be smaller than the length H2 of the second opening 335, that is, the length H2 of the second opening 335 may be larger than the length H1 of the first opening 333. If the thickness of the second plate 330 is set to a thickness of 35 mm to 100 mm and the length of the second opening 335 is set to a length H2 of 25 mm, the first opening 333 may be set to a length H1 greater than 10 mm and less than 25 mm to reduce the density of plasma.

[0067] The length H1 of the first opening 333 and the length H2 of the second opening 335 may be set to be the same. As described above, the length H1 of the first opening 333 and the length H2 of the second opening 335 may be set to be different from or the same as each other to adjust plasma to a desired density.

[0068] The power supply device 400 may be connected to the gas injection device 300 to supply power for generating plasma in the chamber 10 to the gas injection device 300. That is, the power supply device 400 may supply radio frequency (RF) power for generating plasma in the chamber 10.

[0069] Here, the power supply device 400 may be connected to the second plate 330 to supply RF power only to the second plate 330, and the first plate may be grounded. Here, the first plate and the second plate 330 may be insulated by a second sealing member 360 made of an insulating material. As described above, when the power supply device 400 supplies RF power to the second plate 330 and the first plate is grounded, each of the first plate and the second plate 330 is provided as an electrode for generating capacitive coupled plasma (CCP). In addition, since the substrate support 22 may also be grounded, a capacitive coupled plasma may be generated between the second plate 330 and the substrate support 22.

[0070] Alternatively, the power supply device 400 may also supply power to the first plate and the second plate 330. In this case, the second sealing member 360 may be made of a conductive material so that the power supply device 400 supplies RF power to the first plate or the second plate 330, or the power supply device 400 supplies RF power to the first plate and the second plate 330. Here, the same RF power may be supplied to the first plate and the second plate 330. As described above, when the power supply device 400 supplies RF power to the first plate and the second plate 330, the plasma sheath region defined between the first plate and the second plate 330 may be reduced compared to the case where the first plate is grounded. Therefore, a capacitively coupled plasma having a relatively high density may be generated between the plates and the grounded substrate support 22.

[0071] As described above, when the apparatus for processing the substrate is used, a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method may be used to deposit a thin film on the substrate S. Here, the thin film deposited by the chemical vapor deposition method or the atomic layer deposition method may include an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a thin film having a high dielectric constant (high-K), a silicon dioxide (SiO2) thin film, and at least one of a silicon nitride (SiN) thin film.

[0072] First, when a thin film is deposited on a substrate S by a chemical vapor deposition method, a source gas and a reaction gas may be supplied to the substrate S at the same time. Here, the first gas may include a source gas, and the second gas may include a reaction gas. However, not limited thereto, the first gas may include a reaction gas, the second gas may include a source gas, or at least one of the first gas and the second gas may include a mixed gas in which the source gas and the reaction gas are mixed. In addition, at least one of the first gas and the second gas may be a purge gas. Here, the power supply device 400 may supply RF power to the gas injection device 300 to generate plasma in the chamber 10, thereby improving the deposition efficiency.

[0073] When a thin film is deposited on the substrate S by an atomic layer deposition method, a source gas and a reaction gas may be alternately supplied to the substrate S. Here, the first gas may include a source gas, the second gas may include a reaction gas, or the first gas may include a reaction gas, and the second gas may include a source gas. In addition, at least one of the first gas and the second gas may be a purge gas. Here, a process of supplying a source gas, a process of supplying a purge gas, a process of supplying a reaction gas, and a process of supplying a purge gas may form a process cycle, and the process cycle may be repeated multiple times to deposit a thin film on the substrate S. Here, the power supply device 400 may supply RF power to the gas injection device 300 to generate plasma in the chamber 10. Therefore, the process of supplying a reaction gas may be performed to improve the deposition efficiency.

[0074] According to exemplary embodiments, the intervals between openings through which process gases are injected may be minimized to improve deposition uniformity. In addition, a high-density plasma may be generated using a hollow cathode effect, and thus, a high-quality thin film may be formed.

[0075] Although specific embodiments have been described and illustrated by using specific terms, these terms are only examples for clearly explaining the exemplary embodiments, and therefore, it will be apparent to those skilled in the art that the exemplary embodiments and technical terms may be implemented in other specific forms and changes without changing the technical ideas or essential features. Therefore, it should be understood that simple modifications of the exemplary embodiments according to the present invention may belong to the technical spirit of the present invention.

Claims

1. A gas injection device, comprising: a first plate in which a first gas supply path and a second gas supply path are provided to be separated from each other, and the first plate has a first gas supply hole and a second gas supply hole connected to the first gas supply path and the second gas supply path, respectively; as well as A second plate is spaced apart from the first plate and has a plurality of openings alternately arranged with the first gas supply holes and the second gas supply holes.

2. The gas injection device according to claim 1, wherein: The second plate is disposed to be spaced apart from the first plate at an interval of 1 mm to 3 mm.

3. The gas injection device according to claim 1, wherein: The opening comprises: a first opening defined at one side of the first plate; and A second opening is connected to the first opening and has a diameter greater than a diameter of the first opening.

4. The gas injection device according to claim 3, wherein: The first opening has a diameter of 1 mm to 3 mm.

5. The gas injection device according to claim 3, wherein: The second opening has a diameter of 10 mm to 14 mm.

6. The gas injection device according to claim 3, wherein: The opening further includes a third opening configured to connect the first opening and the second opening between the first opening and the second opening.

7. The gas injection device according to claim 6, wherein: The third opening has a shape in which a cross section gradually increases toward the second opening.

8. The gas injection device according to claim 3, wherein: The second opening has a length of 25 mm to 75 mm.

9. The gas injection device according to claim 1, wherein: The second plate has a thickness of 35 mm to 100 mm.

10. The gas injection device according to claim 1, wherein: The openings are arranged at intervals of 12 mm to 20 mm.

11. The gas injection device according to claim 3, wherein: The first opening and the second opening have different lengths from each other.

12. The gas injection device according to claim 11, wherein: The first opening has a length that is longer than a length of the second opening.

13. The gas injection device according to claim 11, wherein: The second opening has a length that is longer than a length of the first opening.

14. An apparatus for processing a substrate, comprising: Chamber; a substrate supporting device installed in the chamber to support the substrate; The gas injection device according to any one of claims 1 to 13, wherein the gas injection device is installed in the chamber to inject gas toward the substrate support device; as well as A power supply device is connected to the gas injection device to supply power to the gas injection device.

15. The apparatus for processing a substrate according to claim 14, wherein: The first plate and the second plate are electrically insulated from each other, and The power supply device is connected to the second board to supply power to the second board.

16. The apparatus for processing a substrate according to claim 14, wherein: The power supply device is configured to supply power to the first board and the second board.

17. A method for depositing a thin film by using the gas injection device as claimed in any one of claims 1 to 13, in, A first gas is supplied through the first gas supply path, and a second gas is supplied through the second gas supply path to deposit a thin film on a substrate.

18. The method for depositing a thin film according to claim 17, wherein: At least one of the first gas and the second gas is supplied to deposit a thin film on the substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

19. The method for depositing a thin film according to claim 17, wherein: The thin film includes an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a thin film with a high dielectric constant (high-K), a silicon dioxide (SiO2) thin film, and at least one of a silicon nitride (SiN) thin film.

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