Plasma processing apparatus and temperature measurement method

Abstract

The susceptor is disposed within the plasma processing chamber. The electrostatic chuck is disposed on an upper portion of the base. The first heater electrode layer is disposed in the electrostatic chuck. The second heater electrode layer is disposed in a position different from the first heater electrode layer in plan view in the electrostatic chuck. A first temperature sensor measures a temperature of the first heater electrode layer. A second temperature sensor measures a temperature of the second heater electrode layer. The signal line is electrically connected with the first temperature sensor and the second temperature sensor. The GND line is electrically connected with the first temperature sensor and the second temperature sensor. The signal detection unit is electrically connected to the signal line and the GND line.

Description

Technical Field

[0001] The invention relates to a plasma processing device and a temperature measurement method. Background Art

[0002] Patent Document 1 discloses a technique in which a heater is provided in each area obtained by dividing a placement surface of a placement table for placing a substrate so as to adjust the temperature of the placement surface for each area.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2017 / 0167790

[0006] Patent Document 2: Japanese Patent Application Publication No. 2020-009795 Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] The present invention provides a technology capable of suppressing an increase in the number of components for temperature measurement.

[0009] Means for solving technical problems

[0010] A plasma processing device according to one embodiment of the present invention includes a plasma processing chamber, a pedestal, an electrostatic chuck, a first heater electrode layer, a second heater electrode layer, a first temperature sensor, a second temperature sensor, a signal line, a GND line, and a signal detection unit. The pedestal is arranged in the plasma processing chamber. The electrostatic chuck is arranged on the upper part of the pedestal. The first heater electrode layer is arranged in the electrostatic chuck. The second heater electrode layer is arranged in the electrostatic chuck at a position different from the first heater electrode layer when viewed from above. The first temperature sensor is used to measure the temperature of the first heater electrode layer. The second temperature sensor is used to measure the temperature of the second heater electrode layer. The signal line is electrically connected to the first temperature sensor and the second temperature sensor. The GND line is electrically connected to the first temperature sensor and the second temperature sensor. The signal detection unit is electrically connected to the signal line and the GND line.

[0011] Effects of the Invention

[0012] According to the present invention, it is possible to suppress an increase in the number of components for temperature measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a diagram for explaining a configuration example of the capacitive coupling type plasma processing apparatus according to the first embodiment.

[0014] Figure 2It is a diagram showing an example of the structure of the substrate supporting portion according to the first embodiment.

[0015] Figure 3 It is a diagram showing an example of the structure of the substrate supporting portion according to the first embodiment.

[0016] Figure 4 It is a diagram showing an example of a schematic structure of a substrate supporting portion according to the first embodiment.

[0017] Figure 5 This is a diagram showing an example of a flow of detecting the temperature of each temperature sensor according to the first embodiment.

[0018] Figure 6 This is a diagram showing an example of a change in the voltage of the common line when the switch is switched according to the first embodiment.

[0019] Figure 7 FIG. 1 is a diagram showing an example of the structure of a substrate support portion of a comparative example.

[0020] Figure 8 This is a diagram for explaining an example of the processing procedure of the temperature measurement method according to the first embodiment.

[0021] Fig. 9 It is a diagram showing an example of a schematic structure of a substrate supporting portion according to the second embodiment.

[0022] Fig.10 This is a diagram showing an example of a flow of detecting the temperature of each temperature sensor according to the second embodiment.

[0023] Fig.11 It is a diagram showing another example of the schematic structure of the substrate supporting portion according to the second embodiment.

[0024] Fig.12 It is a diagram showing an example of the structure of a substrate support portion according to another embodiment. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the plasma processing apparatus and the temperature measurement method of the present invention will be described in detail with reference to the accompanying drawings. However, the plasma processing apparatus and the temperature measurement method of the present invention are not limited to these embodiments.

[0026] In plasma processing such as plasma etching processing and film forming processing, the processing conditions vary depending on the temperature of each region of the substrate. Therefore, in a plasma processing device, a mounting table that can adjust the temperature of each region obtained by dividing the mounting surface is used. Such a mounting table is provided with a heater and a temperature sensor for each region. In the plasma processing device, each temperature sensor is connected to a control board to measure the temperature, and the temperature of the heater is controlled for each region in accordance with the temperature measured by the temperature sensor.

[0027] The plasma processing apparatus controls the temperature of the substrate in detail for each area, so there is a tendency for the number of areas of the mounting table to increase. As the number of areas increases, the number of temperature sensors also increases, and the number of components of the control board for connecting to each temperature sensor increases.

[0028] Therefore, a technology capable of suppressing an increase in the number of components for temperature measurement is desired.

[0029] [First embodiment]

[0030] [Device structure]

[0031] An example of a plasma processing apparatus of the present invention will be described. In the embodiments described below, a plasma processing system using the plasma processing apparatus of the present invention as a system configuration will be described as an example.

[0032] Next, a configuration example of a plasma processing system will be described. Figure 1 It is a diagram for explaining a configuration example of the capacitive coupling type plasma processing apparatus according to the first embodiment.

[0033] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit can introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is arranged in the plasma processing chamber 10. The showerhead 13 is arranged above the substrate support unit 11. In one embodiment, the showerhead 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s; and at least one gas exhaust port for exhausting gas from the plasma processing space. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10. The substrate support 11 corresponds to the mounting table in the present invention.

[0034] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has: a central area 111a for supporting a substrate W; and an annular area 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 when viewed from above. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner surrounding the substrate W on the central area 111a of the main body 111. Therefore, the central area 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular area 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0035] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or the DC (Direct Current) power supply 32 described later may be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode can function as a lower electrode. In the case where a bias RF signal and / or a DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0036] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0037] In addition, the substrate support portion 11 may include a temperature regulating module for regulating at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature regulating module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as salt water or gas may flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion for supplying a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0038] The showerhead 13 is capable of introducing at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a can be introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the showerhead 13 includes at least one upper electrode. In addition, the gas introduction unit may include, in addition to the showerhead 13, one or more side gas injection units (SGI: Side Gas Injector) installed in one or more openings formed on the side wall 10a.

[0039] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is capable of supplying at least one process gas from the gas source 21 corresponding to each other via the flow controller 22 corresponding to each other to the shower head 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsing the flow of at least one process gas.

[0040] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 can supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit that can generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0041] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is capable of generating a source RF signal (source RF electric power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be capable of generating a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0042] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be capable of generating a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0043] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is capable of generating a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0044] In various embodiments, at least one of the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform in the shape of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first DC generator 32a and the second DC generator 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0045] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0046] The control unit 2 is capable of processing computer-executable commands, which are used to cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 is capable of controlling the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 is capable of reading a program from the storage unit 2a2 and performing various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0047] Next, the structure of the substrate supporting portion 11 according to the first embodiment will be described. Figure 2 FIG. 1 is a diagram showing an example of the structure of the substrate support portion 11 according to the first embodiment. Figure 2 FIG. 2 shows a plan view of a mounting surface 114 of an electrostatic chuck 1111 of a substrate support portion 11 on which a substrate W is mounted. Figure 1 Corresponding to the central area 111a.

[0048] exist Figure 2 In the example of FIG. 1 , the mounting surface 114 is a substantially circular region in a plan view. The mounting surface 114 is formed to have a diameter substantially the same as that of the substrate W or slightly smaller than that of the substrate W.

[0049] The substrate support portion 11 can control the temperature of each region 115 obtained by dividing the loading surface 114 of the electrostatic chuck 1111. For example, the electrostatic chuck 1111 is divided into a plurality of regions 115, and a heater is embedded in each region 115. The loading surface 114 is provided with a heater in the region 115 of the electrostatic chuck 1111, and the temperature can be controlled for each region 115. In addition, Figure 2 The division method of the area 115 shown is an example and is not limited thereto. For example, the mounting surface 114 may be divided into circular areas 115 at the center. In addition, the mounting surface 114 may be divided into areas 115 in a grid shape. In addition, the mounting surface 114 may be divided into more areas 115. For example, the mounting surface 114 may be divided into arc-shaped areas 115 in a manner that the closer to the periphery, the smaller the angular width and the narrower the radial width.

[0050] In addition, the substrate support unit 11 can measure the temperature of each region 115 of the placement surface 114. For example, the substrate support unit 11 is provided with a temperature sensor in each region 115, and can measure the temperature of each region 115.

[0051] In the embodiment, the case where the mounting surface 114 (central area 111a) of the electrostatic chuck 1111 on which the substrate W is mounted is divided into areas 115 and the temperature of each area 115 is controlled is described as an example. However, this is not limited to this. A heater and a temperature sensor may also be provided for the annular area 111b of the mounting ring assembly 112 so that the temperature can be controlled. For example, the central area 111a and the annular area 111b may be divided into areas 115 as the mounting surface 114.

[0052] Figure 3 1 is a diagram showing an example of the structure of the substrate support portion 11 according to the first embodiment. 1 is a diagram showing an example of the schematic structure of the substrate support portion 11. Figure 3 A cross-sectional view of the substrate support portion 11 is shown in FIG.

[0053] The substrate support part 11 is configured to support a substrate W. For example, the main body 111 of the substrate support part 11 has an electrostatic chuck 1111 disposed on a susceptor 1110 . The electrostatic chuck 1111 is bonded to the susceptor 1110 via an adhesive layer 1112 . The upper surface of the electrostatic chuck 1111 is a mounting surface 114 .

[0054] The base 1110 includes a conductive member and is formed of, for example, a conductive metal such as aluminum.

[0055] The electrostatic chuck 1111 includes an insulating layer such as ceramic and a film-shaped electrode provided in the insulating layer. The electrostatic chuck 1111 generates electrostatic attraction to attract and hold the substrate W by applying a DC voltage to the electrode provided inside from a power source (not shown).

[0056] The base 1110 has a flow path 1110a for the flow of a heat transfer fluid formed inside the lower portion of the mounting surface 114. In addition, the electrostatic chuck 1111 is provided with a heater 116 in each region 115. The heater 116 is an electrode layer provided in the electrostatic chuck 1111. The heater 116 corresponds to the first heater electrode layer and the second heater electrode layer of the present invention. The substrate support portion 11 can adjust the temperature of the entire substrate by flowing the heat transfer fluid whose temperature has been adjusted in the flow path 1110a, and can adjust the temperature of each region 115 individually by heating each of the heaters 116.

[0057] The electrostatic chuck 1111 is provided with a temperature sensor SNS in each area 115. In addition, the temperature sensor SNS may also be provided in the base 1110 or in the adhesive layer 1112. A plurality of heater control circuits 120 and a temperature control board 130 are provided at the lower portion of the base 1110. Each heater 116 is connected to any one of the heater control circuits 120. The heater control circuit 120 can control the temperature of the heater 116 by controlling the electric power supplied to the heater 116.

[0058] Each temperature sensor sns is connected to the temperature control board 130. The temperature control board 130 measures the temperature of each area 115 using each temperature sensor sns.

[0059] Each heater control circuit 120 and the temperature control board 130 are connected to the control unit 2. The temperature control board 130 outputs the data of the measured temperature of each area 115 to the control unit 2. The heater control circuit 120 supplies individually regulated electric power to each heater 116 under the control of the control unit 2.

[0060] However, when a temperature sensor sns is provided for each region 115 obtained by dividing the mounting surface 114 of the substrate support 11 to measure the temperature, the number of components such as a detection circuit for detecting the temperature of each temperature sensor sns and a connector for connecting to each temperature sensor sns increases. The plasma processing apparatus 1 finely controls the temperature of the substrate W for each region, and therefore, there is a tendency that the number of regions 115 of the mounting surface 114 of the substrate support 11 increases. However, the more the number of regions 115 increases, the more the number of components for connecting to each temperature sensor sns in the temperature control board 130 increases. The board size of the temperature control board 130 is limited, and the installation space of the components is limited, so the required components cannot be installed.

[0061] Therefore, in this embodiment, the substrate supporting portion 11 is configured as follows. Figure 4 FIG. 1 is a diagram showing an example of a schematic structure of the substrate support portion 11 according to the first embodiment. Figure 4 2 shows a schematic circuit structure of the electrostatic chuck 1111 and the temperature control plate 130 constituting the substrate support portion 11 of the first embodiment. As described above, the electrostatic chuck 1111 is provided with a temperature sensor sns in each region 115. Figure 4 1 shows the temperature sensors sns1, sns2, ..., snsN arranged on the electrostatic chuck 1111. Figure 4 In the example of FIG. 1 , the temperature sensor sns is a thermistor. The resistance value between the terminals of the temperature sensor sns changes according to the temperature. The temperature sensor sns is connected to a connection line 118 .

[0062] The temperature control board 130 is provided with an ADC (Analog-to-Digital Converter) 131. To the ADC 131, common lines 132 (132a and 132b) are connected.

[0063] Each connection line 118 is connected in parallel to the common lines 132a and 132b. In addition, a switch Sw is provided on each connection line 118. Figure 4 , switches Sw1, Sw2, ..., SwN are shown in FIG. The switch Sw corresponds to the first switch and the second switch of the present invention.

[0064] The common line 132a is connected to a wiring 136 connected to a predetermined reference voltage system via a resistor 135. The common line 132b is connected to a grounded wiring 137. The common line 132a corresponds to a signal line of the present invention. The common line 132b corresponds to a GND line of the present invention. The ADC 131 corresponds to a signal detection unit of the present invention.

[0065] The temperature control board 130 measures the temperature of each temperature sensor sns under the control of the control unit 2. For example, the control unit 2 can control so that the switch Sw of each connection line 118 is turned on individually, and the voltage level of the common line 132a is measured by the ADC 131 according to the on period of the switch Sw. Then, the control unit 2 can control so that the resistance value of each temperature sensor sns is calculated based on the measured voltage level, and the temperature of each temperature sensor sns is detected based on the calculated resistance value.

[0066] When all switches Sw are in the off state, the voltage level of the common line 132a becomes a reference voltage (reference voltage). On the other hand, when any switch Sw is in the on state, the common line 132a is connected to the temperature sensor sns via the connection line 118 in which the switch Sw is in the on state. The resistance between the terminals of the temperature sensor sns changes in accordance with the temperature. Therefore, the voltage level of the common line 132a changes in accordance with the resistance value of the temperature sensor sns in the on state. ADC131 performs AD conversion on the voltage of the common line 132a and outputs data representing the voltage value to the control unit 2. The control unit 2 stores conversion data representing the relationship between the voltage value and the temperature. Based on the conversion data, the control unit 2 converts the voltage value represented by the data input from the ADC 131 into a temperature, thereby detecting the temperature of the temperature sensor sns of the connection line 118 in which the switch Sw is in the on state.

[0067] The control unit 2 turns on the switch Sw of each connection line 118 individually, and converts the data input from the ADC 131 into a temperature according to the on period of the switch Sw, thereby detecting the temperature of each temperature sensor sns. Figure 5 This is a diagram showing an example of a flow of detecting the temperature of each temperature sensor sns according to the first embodiment. Figure 5 FIG. 2 shows an example of a time period during which the switches Sw are sequentially turned on. The control unit 2 as a whole sequentially turns on the switches Sw1, Sw2, ..., SwN individually during a period of 100 ms. Figure 5 In FIG. 1 , the time periods during which the switches Sw1, Sw2, ... SwN are turned on individually and sequentially are represented as Sw1 on, Sw2 on, ... SwN on. The control unit 2 detects the temperatures of the temperature sensors sns1, sns2, ... snsN by converting the data input from the ADC 131 into temperatures in accordance with the on-time periods of the switches Sw1, Sw2, ... SwN. Figure 5 In FIG. 1 , the temperature data of the temperature sensors sns1 , sns2 , ..., snsN are represented as sns1 data, sns2 data, ..., snsN data.

[0068] The control unit 2 controls the electric power supplied from each heater control circuit 120 to each heater 116 according to the temperature detected by each temperature sensor sns so that the region 115 reaches a predetermined temperature.

[0069] Here, when the switches Sw are sequentially turned on, the voltage of the common line 132 a changes to a voltage corresponding to the temperature of the temperature sensor sns that is turned on, but it takes a predetermined time for the voltage to stabilize. Figure 61 is a diagram showing an example of a change in the voltage of the common line 132a when the switch Sw is switched in the first embodiment. Figure 6 In FIG. 1 , the on-time period in which the switches Sw1, Sw2, and Sw3 are turned on in sequence is represented as Sw1 on, Sw2 on, and Sw3 on, and the voltage variation during the on-time period is shown. Figure 6 As shown in FIG. 1 , when the switches Sw1, Sw2, and Sw3 are sequentially turned on, it takes a predetermined time for the voltage of the common line 132a to stabilize at a voltage corresponding to the temperature of the temperature sensor sns that is turned on. If the ADC 131 performs AD conversion on the voltage of the common line 132a during the transition time until the voltage stabilizes, the accurate temperature cannot be detected.

[0070] Therefore, the control unit 2 can control the temperature to be measured after a prescribed sampling prohibition time has passed since the beginning of the on-time period in each on-time period while turning on each switch Sw in sequence. For example, the control unit 2 can control the temperature to be measured after a prescribed sampling prohibition time has passed since the beginning of the on-time period in each on-time period by ADC131. The sampling prohibition time is a time longer than the transition time until the voltage stabilizes. For example, the sampling prohibition time is the transition time. The transition time is determined in accordance with the time constant of the resistance R and the capacitance C of the circuit that becomes the on state by turning on the switch Sw. The sampling prohibition time is determined in accordance with the time constant of the resistance R and the capacitance C of the circuit formed by the common lines 132a, 132b, the connecting line 118, etc. that become the on state by turning on the switch Sw.

[0071] In addition, noise may be generated in the AD conversion performed by the ADC 131. Therefore, the control unit 2 can control so that the ADC 131 performs AD conversion on the voltage of the common line 132a a plurality of times in each on period. For example, the control unit 2 can control so that the ADC 131 performs AD conversion on the voltage of the common line 132a 100 times after the prohibition time has passed from the start of the on period in each on period. The control unit 2 averages the data inputted a plurality of times from the ADC 131 to detect the temperature.

[0072] Here, as a comparative example, an example of the structure of the conventional substrate supporting portion 11 will be described. Figure 7 FIG. 1 is a diagram showing an example of the structure of the substrate support portion 11 of the comparative example. Figure 71 shows a schematic circuit structure of an electrostatic chuck 1111 and a temperature control board 130 constituting a substrate support portion 11 of a comparative example. The temperature control board 130 of the comparative example is provided with an ADC 131 corresponding to the temperature sensor sns. Each temperature sensor sns is individually connected to the ADC 131 via a connection line 118. The temperature control board 130 of the comparative example can measure the temperature of each temperature sensor sns in parallel by having each ADC 131 perform AD conversion on the voltage of the connection line 118.

[0073] However, in adopting Figure 7 In the case of such a structure, the temperature control board 130 of the comparative example requires ADCs 131 equal to the number of the temperature sensors sns. For example, when the number of the regions 115 of the substrate support 11 is N and N temperature sensors sns are provided, the temperature control board 130 of the comparative example requires N ADCs 131. In addition, the temperature control board 130 of the comparative example requires two connectors for each temperature sensor sns in order to connect to each temperature sensor sns, so the number of connectors also increases. For example, in the comparative example, when N temperature sensors sns are provided, the temperature control board 130 requires 2N connectors.

[0074] On the other hand, the temperature control board 130 of the first embodiment connects each connection line 118 to the common lines 132a and 132b in parallel, and turns on the switch Sw individually to measure the temperature of each temperature sensor sns in a time-division manner. As a result, the temperature control board 130 of the first embodiment can reduce the number of ADCs 131. For example, the temperature control board 130 of the first embodiment can measure the temperature of each temperature sensor sns by only providing one ADC 131. In addition, the temperature control board 130 of the first embodiment can reduce the number of connectors required to connect to each temperature sensor sns compared to the comparative example. For example, in this embodiment, the number of connectors required to connect to each temperature sensor sns can be reduced to N+1.

[0075] As described above, the present embodiment can suppress an increase in the number of components for temperature measurement.

[0076] Next, a description will be given of a process flow of a temperature measurement method performed by the plasma processing apparatus 1 according to the embodiment. Figure 8 This is a diagram for explaining an example of the processing procedure of the temperature measurement method according to the first embodiment. Figure 8 The processing of the temperature measurement method shown is performed when the temperature of each area 115 is measured.

[0077] The control unit 2 performs control so that each switch Sw of each connection line 118 is individually turned on (step S10 ).

[0078] The control unit 2 performs control to measure a signal using the ADC 131 in accordance with the on period of each switch Sw (step S11). For example, the control unit 2 performs control so that in each on period, after the sampling prohibition time has passed from the start of the on period, the ADC 131 performs AD conversion on the voltage of the common line 132a. The control unit 2 converts the data input from the ADC 131 into a temperature in accordance with the on period of each switch Sw, thereby detecting the temperature of each temperature sensor sns, and ends the process.

[0079] As described above, the plasma processing apparatus 1 of the first embodiment includes a plasma processing chamber 10, a susceptor 1110, an electrostatic chuck 1111, a first heater electrode layer (heater 116), a second heater electrode layer (heater 116), a first temperature sensor (temperature sensor sns), a second temperature sensor (temperature sensor sns), a signal line (common line 132a), a GND line (common line 132b), and a signal detection unit (ADC 131). The susceptor 1110 is arranged in the plasma processing chamber 10. The electrostatic chuck 1111 is arranged on the upper part of the susceptor 1110. The first heater electrode layer is arranged in the electrostatic chuck 1111. The second heater electrode layer is arranged in the electrostatic chuck 1111 at a position different from the first heater electrode layer in a plan view. The first temperature sensor measures the temperature of the first heater electrode layer. The second temperature sensor measures the temperature of the second heater electrode layer. The signal line is electrically connected to the first temperature sensor and the second temperature sensor. The GND line is electrically connected to the first temperature sensor and the second temperature sensor. The signal detection unit is electrically connected to the signal line and the GND line. Thus, the plasma processing apparatus 1 can reduce the number of connectors required to connect the signal detection unit and the temperature sensor, and can suppress an increase in the number of components for temperature measurement.

[0080] In addition, the plasma processing device 1 of the first embodiment further includes a control unit 2. The control unit 2 can control so that the plasma processing device 1 performs a process including the following steps: a step of measuring the temperature of the first heater electrode layer using the first temperature sensor in a first period; and a step of measuring the temperature of the second heater electrode layer using the second temperature sensor in a second period after the first period. Thus, the plasma processing device 1 can measure the temperatures of the first temperature sensor and the second temperature sensor in a time-division manner.

[0081] In addition, the plasma processing device 1 of the first embodiment also has a first switch (switch Sw) and a second switch (switch Sw). The first switch is configured between the signal line and the first temperature sensor. The second switch is configured between the signal line and the second temperature sensor. The control unit 2 can control so that the plasma processing device 1 performs a process including the following steps: turning on the first switch in the first time period, thereby measuring the temperature of the first heater electrode layer using the first temperature sensor; and turning on the second switch in the second time period, thereby measuring the temperature of the second heater electrode layer using the second temperature sensor. In addition, the control unit 2 turns off the second switch in the first time period and turns off the first switch in the second time period. Thus, the plasma processing device 1 can measure the temperatures of the first temperature sensor and the second temperature sensor in a time-division manner by controlling the first switch and the second switch.

[0082] The control unit 2 sets a non-measurement period (sampling prohibition time) between the first period and the second period. Thus, the plasma processing apparatus 1 can prevent the temperature from being measured during the transition of the voltage change when the switch Sw is switched, and can detect the temperature with high accuracy.

[0083] In addition, the first temperature sensor and the second temperature sensor are arranged in the susceptor 1110, in the electrostatic chuck 1111, or in the adhesive layer 1112 that bonds the susceptor 1110 to the electrostatic chuck 1111. Thus, the plasma processing apparatus 1 can measure the temperature of the first heater electrode layer and the second heater electrode layer via the susceptor 1110, the electrostatic chuck 1111, or the adhesive layer 1112.

[0084] Furthermore, the signal detection unit is an analog-to-digital converter, thereby being able to convert a signal corresponding to the temperature output from the temperature sensor into digital data.

[0085] [Second embodiment]

[0086] The plasma processing system, plasma processing apparatus 1 and control unit 2 of the second embodiment have the same configuration as those of the first embodiment, so description of the same parts will be omitted and mainly the differences will be described.

[0087] Fig. 9 FIG. 1 is a diagram showing an example of a schematic structure of a substrate support portion 11 according to the second embodiment. Fig. 9 2 shows a schematic circuit structure of an electrostatic chuck 1111 and a temperature control plate 130 constituting the substrate support portion 11 of the second embodiment. The electrostatic chuck 1111 is provided with a temperature sensor sns in each region 115. Fig. 9 1 shows the temperature sensors sns1-1, sns1-2, ..., snsm-n arranged on the electrostatic chuck 1111. Fig. 9 In the example, the temperature sensor sns is a thermistor.

[0088] The substrate support 11 of the second embodiment has a plurality of first connection wires 118a and a plurality of second connection wires 118b. One of the two terminals of the temperature sensor sns is connected to any one of the plurality of first connection wires 118a, and the other of the two terminals is connected to any one of the plurality of second connection wires 118b. Fig. 9 In the figure, the temperature sensor sns is shown to be arranged in a grid structure, but it can also be as follows Figure 2 As shown in FIG. 1 , the temperature sensors SNS arranged in each area 115 are connected in a grid pattern on the circuit. Alternatively, the temperature sensors SNS may be arranged in a grid pattern and connected. For example, the substrate support portion 11 may be a substrate support portion 11 in which the mounting surface 114 is divided into the areas 115 in a grid pattern, and the heaters 116 and the temperature sensors SNS are arranged in a grid pattern and connected in a grid pattern.

[0089] The temperature control board 130 is provided with an ADC 131. Common lines 132 (132a, 132b) are connected to the ADC 131. The common line 132a is connected to a wiring 136 connected to a predetermined reference voltage system via a resistor 135. A grounded wiring 137 is connected to the common line 132b. The common line 132a corresponds to the signal line of the present invention. The common line 132b corresponds to the GND line of the present invention. The ADC 131 corresponds to the signal detection unit of the present invention.

[0090] Each first connection line 118a is connected in parallel to the common line 132a. Each second connection line 118b is connected in parallel to the common line 132b. A first switch Swv is provided on each first connection line 118a. A second switch Swh is provided on each second connection line 118b. Fig. 9 1 shows first switches Swv1, Swv2, ... Swvm arranged on the first connection line 118a and second switches Swh1, Swh2, ... Swhn arranged on the second connection line 118b. The first switch Swv corresponds to the first switch and the second switch of the present invention. The second switch Swh corresponds to the third switch and the fourth switch of the present invention.

[0091] The temperature control board 130 measures the temperature of each temperature sensor sns under the control of the control unit 2. For example, the control unit 2 turns on the plurality of first switches Swv and the plurality of second switches Swh, respectively and individually. For example, the control unit 2 controls so that one of the plurality of first switches Swv and the plurality of second switches Swh is turned on in sequence, and the other is turned on in sequence during the period when one is turned on. When the first switch Swv and the second switch Swh are turned on, the temperature sensor sns connected to the first connection line 118a of the turned-on first switch Swv and the second connection line 118b of the turned-on second switch Swh is turned on with the common lines 132a and 132b. The resistance between the terminals of the temperature sensor sns changes in accordance with the temperature. Therefore, the voltage level of the common line 132a changes in accordance with the resistance value of the temperature sensor sns in the turned-on state. The ADC 131 performs AD conversion on the voltage of the common line 132a, and outputs data representing the voltage value to the control unit 2.

[0092] The control unit 2 turns on the plurality of first switches Swv and the plurality of second switches Swh, respectively, individually, and converts the data input from the ADC 131 into temperature according to the turn-on periods of the first switches Swv and the second switches Swh, thereby detecting the temperature of each temperature sensor sns. Fig.10 FIG. 1 is a diagram showing an example of a process for detecting the temperature of each temperature sensor sns according to the second embodiment. Fig.10 An example of a time period for turning on each switch Sw in sequence is shown in FIG. For example, the control unit 2 turns on the second switch Swh in sequence during a period of 100 ms, and turns on the first switch Swv in sequence during the time period when the second switch Swh is turned on. Fig.10 In the embodiment, after the second switch Swh1 is turned on and the first switch Swv1 is turned on, the first switch Swv2 is switched on while the second switch Swh1 is kept turned on. Fig.10 In the figure, the period during which the first switch Swv1 and the second switch Swh1 are both turned on is represented as Swv1 on Swh1 on. In addition, the period during which the first switch Swv2 and the second switch Swh1 are both turned on is represented as Swv2 on Swh1 on. In addition, the period during which the first switch Swvm and the second switch Swhn are both turned on is represented as Swvm on Swhn on.

[0093] As described above, the temperature control board 130 of the second embodiment connects each first connection line 118a in parallel to the common line 132a, and connects each second connection line 118b in parallel to the common line 132b. Furthermore, the temperature control board 130 of the second embodiment turns on the first switch Swv and the second switch Swh separately, and measures the temperature of each temperature sensor sns in a time-division manner corresponding to the turn-on period of the first switch Swv and the second switch Swh. Thus, the temperature control board 130 of the second embodiment can reduce the number of ADCs 131. For example, the temperature control board 130 of the second embodiment can measure the temperature of each temperature sensor sns by only setting one ADC 131. In addition, the temperature control board 130 of the second embodiment can reduce the number of connectors required to connect to each temperature sensor sns compared to the comparative example. For example, the temperature control board 130 of the second embodiment can reduce the number of connectors required to connect to each temperature sensor sns to (N) 1 / 2 +1.

[0094] As described above, the present embodiment can suppress an increase in the number of components for temperature measurement.

[0095] As described above, the plasma processing device 1 of the second embodiment further includes a third switch (second switch Swh) and a fourth switch (second switch Swh). The third switch is configured between the GND line and the first temperature sensor. The fourth switch is configured between the GND line and the second temperature sensor. The control unit 2 is capable of controlling so that the plasma processing device 1 performs a process including the following steps: turning on the first switch (e.g., the first switch Swv1) and the third switch (e.g., the second switch Swh1) in the first time period, thereby measuring the temperature of the first heater electrode layer using the first temperature sensor; and turning on the second switch (e.g., the first switch Swv2) and the fourth switch (e.g., the second switch Swh2) in the second time period, thereby measuring the temperature of the second heater electrode layer using the second temperature sensor. As a result, the plasma processing device 1 can further reduce the number of connectors required to connect the signal detection unit to the temperature sensor, and can suppress the increase in the number of components.

[0096] In addition, the control unit 2 turns off the second switch (e.g., the first switch Swv2) and the fourth switch (e.g., the second switch Swh2) in the first period, and turns off the first switch (e.g., the first switch Swv1) and the third switch (e.g., the second switch Swh1) in the second period. Thus, the plasma processing apparatus 1 can measure the temperatures of the first temperature sensor, the second temperature sensor, and the third temperature sensor in a time-division manner by controlling the first to fourth switches.

[0097] In addition, the plasma processing device 1 of the second embodiment has a third heater electrode layer (heater 116) and a third temperature sensor (temperature sensor sns). The third heater electrode layer is arranged in a lattice shape together with the first heater electrode layer and the second heater electrode layer when viewed from above. The third temperature sensor is arranged in a lattice shape together with the first temperature sensor and the second temperature sensor when viewed from above, and is used to measure the temperature of the third heater electrode layer. The third temperature sensor is electrically connected to the signal line and the GND line. The control unit 2 can control so that the plasma processing device 1 performs a process that also includes the following steps: in a third time period different from the first time period and the second time period, the temperature of the third heater electrode layer is measured using the third temperature sensor. Thus, the plasma processing device 1 can measure the temperatures of the first temperature sensor, the second temperature sensor, and the third temperature sensor in a time-division manner.

[0098] The above embodiments are described, but the embodiments disclosed herein should be considered illustrative rather than restrictive in all respects. In fact, the above embodiments can be implemented in many ways. In addition, the above embodiments can be omitted, replaced, and changed in various ways without departing from the claims and their subject matter.

[0099] For example, in the above-mentioned embodiment, the case where the plasma treatment is performed on a semiconductor wafer as the substrate W is described as an example, but the present invention is not limited thereto. The substrate W may be any substrate.

[0100] In addition, in the above-mentioned embodiment, the case of a plasma processing system that performs plasma etching processing is described as an example. However, it is not limited to this. The plasma processing device can be any device as long as it is a device that performs plasma processing by providing a temperature sensor sns in each area obtained by dividing the mounting surface of the mounting table where the substrate is placed. For example, the plasma processing device can also be a film forming device that generates plasma to form a film.

[0101] In the above-mentioned embodiment, the temperature control board 130 connects the wiring 136 connected to the predetermined reference voltage via the resistor 135 to the common line 132a, and the ADC 131 detects the voltage based on the reference voltage. However, the present invention is not limited to this. The temperature control board 130 may connect the constant current circuit to the common line 132a, and the ADC 131 may detect the voltage as the voltage of the constant current circuit. Fig.11 FIG. 2 is a diagram showing another example of the schematic structure of the substrate support portion 11 according to the second embodiment. Fig.11In the embodiment, the constant current circuit 138 is connected to the common line 132a in the temperature control board 130. The ADC 131 uses the voltage of the constant current circuit 138 as a reference and detects the changed voltage using the temperature sensor sns1.

[0102] In the above embodiment, the temperature sensor sns is a thermistor, and the ADC 131 detects the change in voltage caused by the temperature sensor sns. However, the present invention is not limited thereto. The temperature sensor sns may be an optical temperature sensor. Fig.12 1 is a diagram showing an example of the structure of the substrate support portion 11 of another embodiment. The base 1110 is provided with an optical waveguide 140 in each region 115. One end of an optical fiber 141 is connected to each optical waveguide 140. The other end of the optical fiber 141 is connected to the region selection switch 142. The region selection switch 142 is connected to the photodetector 144 via the optical fiber 143. The photodetector 144 irradiates light of various interference waves and detects the signal intensity of the reflected light. The refractive index of the optical waveguide 140 changes with temperature. Therefore, before and after the temperature change, as the optical path length of the optical waveguide 140 changes, the position of the interference waveform shifts and the peak-to-peak width of the interference waveform changes. The control unit 2 sequentially switches the optical waveguide 140 using the region selection switch 142, and measures the peak value of the interference waveform in each optical waveguide 140 using the photodetector 144, thereby detecting the temperature. Fig.12 The substrate support 11 shown measures the temperature in each optical waveguide 140 in a time-division manner using the area selection switch 142. Fig.12 The illustrated temperature control board 130 enables the number of light detectors 144 to be reduced.

[0103] In addition, the embodiments disclosed herein should be considered in all respects to be illustrative rather than restrictive. In fact, the above embodiments can be implemented in many ways. In addition, the above embodiments can be omitted, replaced, and changed in various ways without departing from the attached claims and their subject matter.

[0104] In addition, regarding the above-mentioned embodiment, the following supplementary notes are further disclosed.

[0105] (Note 1)

[0106] A plasma processing device, characterized in that it comprises:

[0107] a plasma processing chamber;

[0108] a susceptor disposed in the plasma processing chamber;

[0109] an electrostatic chuck disposed on an upper portion of the base;

[0110] a first heater electrode layer disposed within the electrostatic chuck;

[0111] a second heater electrode layer disposed in the electrostatic chuck at a position different from the first heater electrode layer in a plan view;

[0112] a first temperature sensor for measuring a temperature of the first heater electrode layer;

[0113] a second temperature sensor for measuring a temperature of the second heater electrode layer;

[0114] a signal line electrically connected to the first temperature sensor and the second temperature sensor;

[0115] A GND line electrically connected to the first temperature sensor and the second temperature sensor; and

[0116] A signal detection unit is electrically connected to the signal line and the GND line.

[0117] (Note 2)

[0118] The plasma processing device according to Note 1 is characterized in that it also includes a control unit, which is capable of controlling the plasma processing device to perform a process including the following steps: a step of measuring the temperature of the first heater electrode layer using the first temperature sensor in a first time period; and a step of measuring the temperature of the second heater electrode layer using the second temperature sensor in a second time period after the first time period.

[0119] (Note 3)

[0120] The plasma processing device according to Supplement 2, characterized in that it also includes:

[0121] a first switch disposed between the signal line and the first temperature sensor; and

[0122] a second switch disposed between the signal line and the second temperature sensor,

[0123] The control unit is capable of controlling the plasma processing device to perform a process including the following steps:

[0124] a step of turning on the first switch during the first period to measure the temperature of the first heater electrode layer using the first temperature sensor; and

[0125] The step of turning on the second switch during the second period to measure the temperature of the second heater electrode layer using the second temperature sensor.

[0126] (Note 4)

[0127] The plasma processing apparatus according to Supplementary Note 3 is characterized in that: the control unit can control so that the second switch is turned off in the first time period and the first switch is turned off in the second time period.

[0128] (Note 5)

[0129] The plasma processing device according to Supplement 3 or 4, characterized in that it also includes:

[0130] a third switch disposed between the GND line and the first temperature sensor; and

[0131] a fourth switch, which is arranged between the GND line and the second temperature sensor,

[0132] The control unit is capable of controlling the plasma processing device to perform a process including the following steps:

[0133] a step of turning on the first switch and the third switch during the first period to measure the temperature of the first heater electrode layer using the first temperature sensor; and

[0134] The step of turning on the second switch and the fourth switch during the second period to measure the temperature of the second heater electrode layer using the second temperature sensor.

[0135] (Note 6)

[0136] The plasma processing apparatus according to Supplementary Note 5 is characterized in that: the control unit is capable of controlling so that the second switch and the fourth switch are turned off during the first period of time, and the first switch and the third switch are turned off during the second period of time.

[0137] (Note 7)

[0138] The plasma processing device according to any one of Supplementary Notes 2 to 6, comprising:

[0139] a third heater electrode layer arranged in a lattice shape together with the first heater electrode layer and the second heater electrode layer in a plan view; and

[0140] a third temperature sensor, which is arranged in a grid shape together with the first temperature sensor and the second temperature sensor in a plan view, and is used to measure the temperature of the third heater electrode layer,

[0141] The third temperature sensor is electrically connected to the signal line and the GND line,

[0142] The control section can control the plasma processing apparatus to perform a process further including measuring the temperature of the third heater electrode layer using the third temperature sensor in a third period different from the first period and the second period.

[0143] (Note 8)

[0144] The plasma processing apparatus according to any one of Supplementary Notes 2 to 7, wherein the control unit is capable of performing control so that a non-measurement period is provided between the first period and the second period.

[0145] (Note 9)

[0146] The plasma processing apparatus according to any one of Supplementary Notes 1 to 8, wherein the first temperature sensor and the second temperature sensor are arranged in the susceptor, in the electrostatic chuck, or in an adhesive layer that bonds the susceptor to the electrostatic chuck.

[0147] (Note 10)

[0148] The plasma processing apparatus according to any one of Supplementary Notes 1 to 9, wherein the signal detection unit is an analog-to-digital converter.

[0149] (Note 11)

[0150] A temperature measurement method is a temperature measurement method for a plasma processing device, wherein the plasma processing device comprises:

[0151] a plasma processing chamber;

[0152] a susceptor disposed in the plasma processing chamber;

[0153] an electrostatic chuck disposed on an upper portion of the base;

[0154] a first heater electrode layer disposed within the electrostatic chuck;

[0155] a second heater electrode layer disposed in the electrostatic chuck at a position different from the first heater electrode layer in a plan view;

[0156] a first temperature sensor for measuring a temperature of the first heater electrode layer;

[0157] a second temperature sensor for measuring a temperature of the second heater electrode layer;

[0158] a signal line electrically connected to the first temperature sensor and the second temperature sensor;

[0159] A GND line electrically connected to the first temperature sensor and the second temperature sensor; and

[0160] a signal detection unit electrically connected to the signal line and the GND line,

[0161] The temperature measurement method is characterized by comprising:

[0162] a step of measuring the temperature of the first heater electrode layer using the first temperature sensor during a first period; and a step of measuring the temperature of the second heater electrode layer using the second temperature sensor during a second period after the first period.

[0163] Description of Reference Numerals

[0164] 1 plasma processing apparatus, 2 control unit, 11 substrate supporting unit, 111 main body, 111a central area, 111b annular area, 112 ring assembly, 114 mounting surface, 115 area, 116 heater, 118 connecting wire, 118a first connecting wire, 118b second connecting wire, 120 heater control circuit, 130 temperature control board, 132 common wire, 132a common wire, 132b common wire, 135 resistor, 136 wiring, 137 wiring, 138 constant current circuit, 140 optical waveguide, 141 optical fiber, 142 area selection switch, 143 optical fiber, 144 optical detector, 1110 base, 1110a flow path, 1111 electrostatic chuck, SNS temperature sensor, Sw switch, W substrate.

Claims

1. A plasma processing device, characterized in that: include: a plasma processing chamber; a susceptor disposed in the plasma processing chamber; an electrostatic chuck disposed on an upper portion of the base; a first heater electrode layer disposed within the electrostatic chuck; a second heater electrode layer disposed in the electrostatic chuck at a position different from the first heater electrode layer in a plan view; a first temperature sensor for measuring a temperature of the first heater electrode layer; a second temperature sensor for measuring a temperature of the second heater electrode layer; a signal line electrically connected to the first temperature sensor and the second temperature sensor; A GND line, which is electrically connected to the first temperature sensor and the second temperature sensor; and A signal detection unit is electrically connected to the signal line and the GND line.

2. The plasma processing device according to claim 1, characterized in that: It also includes a control unit that is capable of controlling the plasma processing device to perform a process including the following steps: a step of measuring the temperature of the first heater electrode layer using the first temperature sensor in a first time period; and a step of measuring the temperature of the second heater electrode layer using the second temperature sensor in a second time period after the first time period.

3. The plasma processing device according to claim 2, characterized in that: Also includes: a first switch, disposed between the signal line and the first temperature sensor; and a second switch disposed between the signal line and the second temperature sensor, The control unit is capable of controlling the plasma processing device to perform a process including the following steps: a step of turning on the first switch during the first period of time to measure the temperature of the first heater electrode layer using the first temperature sensor; and The step of turning on the second switch during the second period to measure the temperature of the second heater electrode layer using the second temperature sensor.

4. The plasma processing device according to claim 3, characterized in that: The control unit can perform control so that the second switch is turned off during the first period and the first switch is turned off during the second period.

5. The plasma processing device according to claim 3, characterized in that: Also includes: A third switch is arranged between the GND line and the first temperature sensor; and a fourth switch, which is arranged between the GND line and the second temperature sensor, The control unit is capable of controlling the plasma processing device to perform a process including the following steps: a step of turning on the first switch and the third switch during the first period of time, thereby measuring the temperature of the first heater electrode layer using the first temperature sensor; and The step of turning on the second switch and the fourth switch during the second period to measure the temperature of the second heater electrode layer using the second temperature sensor.

6. The plasma processing device according to claim 5, characterized in that: The control unit can perform control so that the second switch and the fourth switch are turned off during the first period, and the first switch and the third switch are turned off during the second period.

7. The plasma processing device according to claim 2, characterized in that: include: a third heater electrode layer arranged in a lattice shape together with the first heater electrode layer and the second heater electrode layer in a plan view; and a third temperature sensor, which is arranged in a grid shape together with the first temperature sensor and the second temperature sensor in a plan view, and is used to measure the temperature of the third heater electrode layer, The third temperature sensor is electrically connected to the signal line and the GND line, The control section can control the plasma processing apparatus to perform a process further including measuring the temperature of the third heater electrode layer using the third temperature sensor in a third period different from the first period and the second period.

8. The plasma processing device according to claim 2, characterized in that: The control section can perform control so that a non-measurement period is provided between the first period and the second period.

9. The plasma processing device according to claim 1, characterized in that: The first temperature sensor and the second temperature sensor are disposed in the susceptor, in the electrostatic chuck, or in an adhesive layer that bonds the susceptor to the electrostatic chuck.

10. The plasma processing device according to claim 1, characterized in that: The signal detection unit is an analog-to-digital converter.

11. A temperature measurement method, which is a temperature measurement method for a plasma processing device, the plasma processing device comprising: a plasma processing chamber; a susceptor disposed in the plasma processing chamber; an electrostatic chuck disposed on an upper portion of the base; a first heater electrode layer disposed within the electrostatic chuck; a second heater electrode layer disposed in the electrostatic chuck at a position different from the first heater electrode layer in a plan view; a first temperature sensor for measuring a temperature of the first heater electrode layer; a second temperature sensor for measuring a temperature of the second heater electrode layer; a signal line electrically connected to the first temperature sensor and the second temperature sensor; A GND line, which is electrically connected to the first temperature sensor and the second temperature sensor; and a signal detection unit electrically connected to the signal line and the GND line, The temperature measurement method is characterized by comprising: a step of measuring the temperature of the first heater electrode layer using the first temperature sensor during a first period of time; and the step of measuring the temperature of the second heater electrode layer using the second temperature sensor in a second period after the first period.

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