Vertically interconnected microelement and method for manufacturing a vertically

Abstract

The invention relates to a vertically interconnected microelement suitable for radio frequency signal transmission, preferably for use in a three-dimensional integrated circuit, comprising: a glass substrate (10) having a first side (12) and a second side (14) opposite the first side (12); at least one internal pass-through connector (100) formed in the glass substrate (10), where the internal pass-through connector (100) comprises an internal cavity (110) extending in the glass substrate (10) from a first side (12) to a second side (14) of the glass substrate (10), the internal cavity (110) being fully or partially filled with a solid conductor material (120); and an external pass-through connector structure (200) formed in the glass substrate (10) and surrounding at least one of the internal pass-through connectors (100), the external pass-through connector structure (200) comprising one or more external cavities (210) in the glass substrate (10) extending from the first side (12) to the second side (14) of the glass substrate (10), the one or more outer cavities (210) are each entirely or partially filled with a solid conductor material (220).

Description

Technical Field

[0001] The present invention relates to a vertically interconnected micro-component suitable for radio frequency signal transmission, which can be used in a three-dimensional integrated circuit. Background Art

[0002] In the field of integrated circuits, three-dimensionally structured systems and microsystems have become an increasingly relevant technology for increasing integration density. Vertical interconnection of such layered systems can be achieved by depositing materials in a multi-stage process to form vertical transmission lines including interconnection elements with via structures.

[0003] For example, CN111180423A shows a hybrid base through-hole ultra-fine coaxial structure for vertical interconnection of radio frequency microsystems and a manufacturing method thereof. The silicon wafer includes a TSV hole structure, and a seed layer is arranged on the inner wall of the TSV hole structure and completely covers the inner wall of the TSV hole structure; an insulating layer is arranged on the seed layer and completely covers the seed layer; the TSV hole structure is filled with a glass medium, a through hole is formed in the glass medium, and a signal line is arranged in the through hole.

[0004] However, such processes and the resulting components are relatively complex, can be prone to defects and are costly. Moreover, the area occupied by the hole structure may still be larger than the desired area for achieving high-density integration. In addition, relatively high dielectric losses may occur.

[0005] The object of the present invention is to provide a vertically interconnected microcomponent which is simpler in structure, less prone to error and less expensive to manufacture. The component should further include a reduced size structure to achieve a higher integration density. In addition, dielectric losses should be reduced to a minimum. The object of the present invention is also to provide a method for manufacturing such a vertically interconnected microcomponent. Summary of the invention

[0006] To achieve the above objectives, the present invention discloses a vertically interconnected microcomponent suitable for radio frequency signal transmission, which is preferably used in a three-dimensional integrated circuit. The vertically interconnected microcomponent includes a substrate, at least one internal through-connector formed in the substrate, and an external through-connector structure formed in the substrate.

[0007] The substrate includes a first side and a second side opposite to the first side, and includes or consists of glass, that is, the substrate is a glass substrate.

[0008] At least one internal through-connector formed in the glass substrate includes an internal cavity in the glass substrate extending from a first side to a second side of the glass substrate, wherein the internal cavity is fully or partially filled with a solid conductor material.

[0009] An external through-connector structure formed in a glass substrate includes one or more external cavities extending in the glass substrate from a first side to a second side of the glass substrate, wherein the one or more external cavities are each fully or partially filled with a solid conductor material.

[0010] That is, the disclosed vertically interconnected microcomponents are based on a glass substrate and are configured for radio frequency transmission, for example, by means of appropriate materials and dimensions.

[0011] The outer through-connector structure surrounds the at least one inner through-connector.

[0012] In one embodiment of the present invention, the external through-connector structure includes a plurality of spaced-apart annular and / or symmetrically arranged external cavities in the glass substrate extending from a first side to a second side of the glass substrate, wherein each of the spaced-apart external cavities is fully or partially filled with a solid conductor material.

[0013] In the extreme case, the outer through-connector structure may include two outer cavities symmetrically surrounding the inner through-connector.

[0014] In another embodiment of the present invention, the external feed-through connector structure comprises a continuous annular external cavity in the glass substrate extending from a first side to a second side of the glass substrate, wherein the continuous external cavity is fully or partially filled with a solid conductor material.

[0015] In a preferred embodiment, the inner through-connector is coaxially and / or symmetrically arranged in the center of the outer through-connector structure.

[0016] Preferably, the vertically interconnected microcomponent comprises only one internal through-connector. However, it is also possible that the vertically interconnected microcomponent comprises a plurality of internal through-connectors, which are preferably arranged in a centrosymmetric manner with respect to the external through-connector structure. That is, the vertically interconnected microcomponent may comprise a plurality of internal through-connectors, which are preferably surrounded by a ring of external cavities.

[0017] In one embodiment, the vertically interconnected microelements are adapted to transmit at least one frequency in the range of 1 MHz to 300 GHz, preferably in the range of 1 GHz to 200 GHz, more preferably in the range of 5 GHz to 100 GHz.

[0018] The vertically interconnected microelements may be adapted to define an upper cut-off frequency, ie a highest transmissible frequency, wherein the upper cut-off frequency is below 300 GHz, preferably below 200 GHz, more preferably below 100 GHz.

[0019] In one embodiment, the vertically interconnected microcomponents define a characteristic impedance in the range of 30 Ohm to 100 Ohm, preferably in the range of 50 Ohm to 100 Ohm, more preferably in the range of 50 Ohm to 75 Ohm.

[0020] The inner and outer feed-through connector structures may have, for example, the following dimensions.

[0021] At least one internal through-connector defines an outer diameter 2a, wherein the outer diameter 2a may be in the range of 1 μm to λ, preferably in the range of 1 μm to 1000 μm, more preferably in the range of 1 μm to 500 μm.

[0022] The outer feed-through connector structure defines an inner diameter 2b, wherein the outer diameter 2b may be in the range of 1 μm to λ, preferably in the range of 1 μm to 1100 μm, more preferably in the range of 1 μm to 550 μm.

[0023] The aforementioned wavelength λ is preferably the upper wavelength of a microwave band selected from the following group: L band, S band, C band, X band, K band u Band, K-band, K a Band, Q band, U band, V band, W band, F band, D band or bands above D band, bands with an upper limit frequency of 300 GHz.

[0024] The outer cavity of the outer feed-through connector structure may preferably have the same size and / or shape as the inner cavity of the inner feed-through connector.

[0025] Regarding the substrate, it can be assumed that the relative permittivity (ε) of the glass substrate at 5 GHz is r ) is lower than 10, preferably in the range of 1.0 to 5.0, more preferably in the range of 3.6 to 4.6, even more preferably in the range of 3.8 to 4.3, even more preferably in the range of 3.9 to 4.2.

[0026] In one embodiment, the thickness of the glass substrate is in the range of 0.03 mm to 3 mm, preferably in the range of 0.05 mm to 1 mm, more preferably in the range of 0.1 mm to 0.3 mm.

[0027] The solid conductor material embedded in the inner cavity and / or in one or more outer cavities may in particular be a metal, preferably a metal selected from the following group: copper, aluminum, gold, palladium, carbon.

[0028] The inner cavity and / or the outer cavity may have specific properties, particularly due to the manufacturing process of the inner cavity and / or the outer cavity in the glass substrate (to be further outlined below).

[0029] For example, the inner cavity and / or one or more outer cavities may feature a wall portion having a plurality of circular, substantially hemispherical depressions, preferably immediately adjacent to one another.

[0030] Preferably, a plurality of circular, substantially hemispherical depressions have adjoining concave fillets forming ridges.

[0031] It is further preferred that the ridges form polygonal delimiting lines as viewed in a plan view of the plurality of circular, substantially hemispherical depressions.

[0032] By means of the present invention, a method for manufacturing a vertically interconnected microcomponent, in particular a vertically interconnected microcomponent according to the above, is also disclosed.

[0033] The method includes providing a glass substrate having a first side and a second side opposite the first side.

[0034] The method further comprises producing at least one inner cavity and at least one outer cavity by directing a laser beam onto one of the sides of the glass substrate to form a filamentary crack in the volume of the glass substrate, and preferably exposing the filamentary crack to an etching medium to form the at least one inner cavity and at least one outer cavity and / or to produce smooth vertical walls. For example, the etching medium may be based on an alkaline or acidic etching solution.

[0035] The method also includes embedding a solid conductor material in the at least one inner cavity and the at least one outer cavity to form at least one inner through-connector and an outer through-connector structure in the glass substrate.

[0036] In an embodiment of the method, embedding the solid conductor material comprises depositing an adhesion layer on the walls of the respective cavity.

[0037] Preferably, the adhesion layer comprises titanium, chromium and / or nickel.

[0038] Preferably, the adhesion layer is deposited by physical vapor deposition, by dip coating, or by chemical vapor deposition or atomic layer deposition.

[0039] In an embodiment of the method, embedding the solid conductor material comprises depositing a seed layer on a wall of the respective cavity or on the adhesion layer.

[0040] Preferably, the seed layer comprises copper and further preferably, the seed layer is deposited by physical vapor deposition, by electroless plating or by chemical vapor deposition or atomic layer deposition.

[0041] In an embodiment of the method, embedding the solid conductor material comprises fully or partially filling the respective cavities with the conductor material, preferably after depositing the adhesion layer and / or the seed layer.

[0042] Preferably, the conductor material filled in whole or in part in the cavity comprises copper, and further preferably, the filling is applied by electroplating.

[0043] In yet another embodiment of the method, after embedding the solid conductor material in the at least one inner cavity and the at least one outer cavity, excess material may be removed from at least one of the side surfaces of the glass substrate.

[0044] Through the present invention, an integrated circuit is further disclosed, which includes vertically interconnected microcomponents as described above, wherein the integrated circuit can be, for example, a microelectromechanical system (MEMS), an image sensor (CIS), a memory (FLASH, DRAM), a processing unit (CPU), a graphics processing unit (GPU), a power supply, a power amplifier, and a field programmable gate array (FPGA).

[0045] Furthermore, the vertically interconnected microcomponent according to the present invention may include a plurality of structures of the internal through-connectors 100 and the external through-connectors 200 on a single glass substrate 10 . BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings:

[0047] Figure 1 is a top view of a first embodiment of vertically interconnected microcomponents,

[0048] Figure 2 is a top view of a second embodiment of vertically interconnected microcomponents,

[0049] Figure 3 is a side view of several steps of a method for manufacturing vertically interconnected microcomponents,

[0050] Figure 4 is a top view of a third embodiment of a vertically interconnected microcomponent,

[0051] Figure 5 is a graph showing the cutoff frequency of vertically interconnected microcomponents for different parameters of an exemplary vertically interconnected microcomponent,

[0052] Figure 6 is a top view of a fourth embodiment of a vertically interconnected microcomponent. DETAILED DESCRIPTION

[0053] Figure 1A vertically interconnected microcomponent is shown having a glass substrate 10 in which a central inner through-connector 100 and an annular outer through-connector structure 200 are formed.

[0054] The internal through-connector 100 includes a single internal cavity 110 in a glass substrate 10 and a solid conductor material 120 embedded therein. In an embodiment, the solid conductor material 120 is formed as a layer on an inner wall portion of the internal cavity 110. Therefore, in an embodiment, the internal cavity 110 is partially filled with the solid conductor material 120, and a free space 150 remains in the center of the internal cavity 110. However, the free space 150 may be filled with another material, such as an epoxy resin material.

[0055] The external through-connector structure 200 includes a plurality of individual spaced apart external cavities 210 that are symmetrically arranged around the internal through-connector 100. In this embodiment, an odd number of external cavities 210 are arranged in a circumferential configuration around the internal connector 100. In this case, the external cavities 210 are formed in the same manner as the internal cavities 110. In particular, the external cavities 210 have the same shape and size as the internal cavities 110, and similarly, a solid conductor material 220 is embedded in each of the external cavities 210 as a layer on the inner wall portion of the external cavity.

[0056] The inner through-connector 100 and the outer through-connector structure 200 together form a coaxial structure with an insulating region 20 therebetween, wherein the insulating region 20 is formed by the glass substrate 10 itself. Thus, the insulating region 20 provides high resistance and improves the signal quality of vertically interconnected microcomponents without the need for additional insulating materials.

[0057] Preferably, the position tolerance of the inner cavity and / or the outer cavity in the substrate is ±3 μm.

[0058] Typically, a single cavity diameter may be, for example, in the range of 20 μm to 70 μm, more preferably in the range of 40 μm to 50 μm. For example, the overall size of the external through-connector structure 200 may be in the range of 300 μm to 400 μm in diameter. For example, the external through-connector structure 200 may, for example, include a number of cavities in the range of 7 to 10. The diameter of the cavity of the external through-connector structure 200 may also be in the range of 20 μm to 70 μm, more preferably in the range of 40 μm to 50 μm. The internal cavity and / or the external cavity are preferably circular. The form of the internal cavity and / or the external cavity volume shape is preferably straight.

[0059] Figure 2A limiting case embodiment of a vertically interconnected microcomponent is shown, the microcomponent comprising an external through-connector structure 200 having two external cavities 210 diametrically opposed to the central internal through-connector 100 .

[0060] Figure 3 Side views showing several steps of a method for fabricating vertically interconnected microcomponents.

[0061] In step (a), an inner cavity 110 and one or more outer cavities 210 are introduced into a glass substrate 10 .

[0062] The cavities 110 , 210 may be fabricated by directing a laser beam onto one of the sides 12 , 14 of the glass substrate 10 to form fine cracks along the thickness of the glass substrate 10 ; subsequently, the fine cracks may be exposed to an etching medium to form the cavities 110 , 210 in the glass substrate 10 .

[0063] The inner cavity 110 and the one or more outer cavities 210 each extend completely through the thickness of the glass substrate 10 , ie, from the first side 12 to the second side 14 of the glass substrate 10 .

[0064] In step (b), the inner cavity 110 and the one or more outer cavities 210 are each coated with a metal seed layer 130, 230 on their inner walls, the metal seed layer comprising, for example, copper. For example, such a seed layer can be deposited by physical or chemical vapor deposition, atomic layer deposition or chemical plating.

[0065] Before coating the inner wall of the cavity 110, 210 with the seed layer 130, 230, an adhesion layer may be applied or formed on the inner wall of the cavity 110, 210. For example, such an adhesion layer may include titanium, chromium and / or nickel. For example, the adhesion layer may be deposited by physical or chemical vapor deposition, atomic layer deposition or dip coating. However, it is also conceivable that the surface layer of the inner wall is changed by physically or chemically activating the surface of the wall to increase the surface adhesion.

[0066] In step (c), a solid conductor material 120, 220 is embedded in the cavity 110, 120, so that the cavity is partially or completely filled with the solid conductor material 120, 220. In the illustrated example, the cavity 110, 210 is filled. The embedding of the solid conductor material 120, 220 is preferably performed by electroplating.

[0067] After the cavities 110, 210 are completely or partially filled with the conductor material, excess material can be removed from the sides 12, 14 of the glass substrate 10. This can be achieved by etching and / or mechanical polishing. After filling the cavity and / or removing excess material, the redistribution layer can be prepared by photolithography.

[0068] Figure 4 An example of an embodiment of the resulting vertically interconnected microcomponent is shown, comprising an inner cavity 110 and an outer cavity 210 filled with solid conductor material 120 , 220 to form an inner through-connector 100 and an outer through-connector structure 200 .

[0069] In general, without limiting the embodiment, the inner pass-through connector 100 may define an outer diameter 2a, and the outer pass-through connector structure 200 may define an inner diameter 2b.

[0070] The formula can be Approximately calculate the characteristic impedance Z 0 , where ε r is the relative permittivity of the glass substrate 10 and, therefore, also the relative permittivity of the insulating area 20. r Glass substrates, especially compared to Si substrates, can reduce the area in the xy direction required for the structure of vertically interconnected microcomponents. If Si is used for this structure, due to the larger dielectric constant, for high-frequency applications, it may cause the vertical interconnect structure to occupy a larger substrate area in the xy direction, which may be detrimental to achieving high-density packaging of components on the substrate (for example, in high-power computing areas).

[0071] For example, vertically interconnected microcomponents including glass substrates can have a target impedance value for high frequency applications in the range of 50Ω to 70Ω. 0 In the same case, when ε r When it is small, for example, ε r =4, the structural area can be reduced. Therefore, the diameter of the outer ring can be smaller to achieve lower impedance. In other words, the use of glass material can reduce the size of the ring structure. For example, for a r =4 low-loss glass and for a characteristic impedance of 50Ω, the ring structure size can be b=a*exp(1.677). Based on different matching of characteristic impedance (for example, 50Ω or 70Ω), the coaxial structure can be flexibly realized by laser processing.

[0072] Figure 5 A graph showing the cutoff frequency of vertically interconnected microcomponents based on low-loss glass substrates, such as described above, is shown. For 2a and 2b in millimeters, the cutoff frequency can be approximated by For example, for a specific cutoff frequency, we can get the values ​​of a and b, based on which we can get Z 0 For a low-loss glass substrate, such as described above, the following examples can be provided:

[0073] 1)2a=1000μm, 2b=5000μm, f 截止 =15.9GHz→Z 0 =48.27Ω,

[0074] 2) 2a=1μm, 2b=5000μm, f 截止 =19.1GHz→Z 0 =255.51Ω,

[0075] 3)2a=1000μm, 2b=2000μm, f 截止 =31.8GHz→Z 0 =20.7Ω.

[0076] Figure 6 An alternative embodiment is shown in which the external through-connector structure 200 comprises a continuous annular external cavity 210 in the glass substrate 10, which is filled with a solid conductor material. However, it should be noted that the previous embodiment is generally preferred due to the ease of manufacturing and the mechanical stability of the substrate, while still retaining the desired impedance values ​​required for operation at high frequencies.

[0077] In summary, in the present invention, an entire glass substrate is used. The glass substrate is structured by laser processing, often (but not necessarily) followed by chemical etching, and the substrate itself is an insulator. In addition, the use of low dielectric glass can enable more dense packaging of metal coaxial vias for use at high frequencies.

[0078] It should be noted that it is relatively uncommon for those skilled in the art to fabricate vertically interconnected microcomponents using glass substrates because fabricating the desired structures in glass substrates may be more complex, especially compared to constructing silicon-based semiconductor materials. For example, when laser machining a ring structure, the size of the ring may need to be carefully controlled to avoid irregularities. Furthermore, the interface stress difference between the inner wall and the outer wall of the ring structure may need to be controlled to avoid defects such as cracks that will lead to structural failure. In addition, laser ablation may be a relatively slow process. However, the method of the present invention may require fewer steps than constructing silicone materials and is therefore advantageous. Furthermore, glass may naturally have a sufficiently large resistivity so that an additional insulating layer is not required. For example, low-loss glass may be used as a substrate. According to If the dielectric constant ε r Smaller, the dielectric loss factor can be reduced.

Claims

1. A vertically interconnected microcomponent suitable for radio frequency signal transmission, preferably used in a three-dimensional integrated circuit, the vertically interconnected microcomponent comprising: A glass substrate (10) having a first side (12) and a second side (14) opposite to the first side (12), at least one internal through-connector (100) formed in the glass substrate (10), wherein the internal through-connector (100) comprises an internal cavity (110) in the glass substrate (10) extending from the first side (12) to the second side (14) of the glass substrate (10), the internal cavity (110) being fully or partially filled with a solid conductor material (120), and An external through-connector structure (200) is formed in the glass substrate (10) and surrounds the at least one internal through-connector (100), the external through-connector structure (200) comprising one or more external cavities (210) extending in the glass substrate (10) from the first side (12) to the second side (14) of the glass substrate (10), the one or more external cavities (210) each being fully or partially filled with a solid conductor material (220).

2. Vertically interconnected microcomponent according to the preceding claim, in, The external through-connector structure (200) comprises a plurality of spaced-apart annular and / or symmetrically arranged external cavities (210) extending from the first side (12) to the second side (14) of the glass substrate (10) in the glass substrate (10), wherein each of the spaced-apart external cavities (210) is fully or partially filled with a solid conductor material (220), and / or The external through-connector structure (200) comprises a continuous annular external cavity (210) extending from the first side surface (12) to the second side surface (14) of the glass substrate (10) in the glass substrate (10), and the continuous external cavity (210) is fully or partially filled with a solid conductor material (220).

3. A vertically interconnected microcomponent according to any one of the preceding claims, in, The internal through-connector (100) is coaxially arranged at the center of the external through-connector structure (220), and / or The vertically interconnected microcomponent comprises a plurality of internal through-connectors (100), and the plurality of internal through-connectors are preferably arranged in a centrally symmetrical manner relative to the external through-connector structure (220).

4. A vertically interconnected microcomponent according to any one of the preceding claims, in, The vertically interconnected microelements are adapted to transmit at least one frequency in the range of 1 MHz to 300 GHz, preferably in the range of 1 GHz to 200 GHz, more preferably in the range of 5 GHz to 100 GHz, and / or Therein, the vertically interconnected microelements define an upper cut-off frequency as a highest transmissible frequency, wherein the upper cut-off frequency is lower than 300 GHz, preferably lower than 200 GHz, and more preferably lower than 100 GHz.

5. A vertically interconnected microcomponent according to any one of the preceding claims, in, The vertically interconnected microcomponents define a characteristic impedance in the range of 30 Ohm to 100 Ohm, preferably in the range of 50 Ohm to 100 Ohm, more preferably in the range of 50 Ohm to 75 Ohm.

6. Vertically interconnected microcomponent according to any one of the preceding claims, in, The at least one internal through-connector (100) defines an outer diameter (2a) in the range of 1 μm to λ, preferably in the range of 1 μm to 1000 μm, more preferably in the range of 1 μm to 500 μm, and / or wherein the external through-connector structure (200) defines an inner diameter (2b) in the range of 1 μm to λ, preferably in the range of 1 μm to 1100 μm, more preferably in the range of 1 μm to 550 μm, Wherein, λ is the upper wavelength limit of the microwave band, and the microwave band is selected from the following: L band, S band, C band, X band, K band, u Band, K-band, K a Band, Q band, U band, V band, W band, F band, D band or bands above D band, bands with an upper limit frequency of 300 GHz.

7. Vertically interconnected microcomponent according to any one of the preceding claims, in, The relative permittivity (ε r ) is lower than 10, preferably in the range of 1.0 to 5.0, more preferably in the range of 3.6 to 4.6, even more preferably in the range of 3.8 to 4.3, even more preferably in the range of 3.9 to 4.2, and / or The thickness of the glass substrate is in the range of 0.03 mm to 3 mm, preferably in the range of 0.05 mm to 1 mm, and more preferably in the range of 0.1 mm to 0.3 mm.

8. A vertically interconnected microcomponent according to any one of the preceding claims, in, The solid conductor material (120) embedded in the inner cavity (110) and / or the one or more outer cavities is a metal, preferably a metal selected from the following group: copper, aluminum, gold, palladium, carbon.

9. A vertically interconnected microcomponent according to any one of the preceding claims, in, The inner cavity (110) and / or the one or more outer cavities are characterized in that the wall has a plurality of circular, substantially hemispherical depressions, which are preferably immediately adjacent to each other, and Wherein, preferably, the plurality of circular, substantially hemispherical depressions have adjacent concave fillets, the concave fillets forming ridges, and Therein, preferably, the ridges form polygonal demarcation lines as viewed in a plan view of the plurality of circular, substantially hemispherical recesses.

10. A method for manufacturing a vertically interconnected microcomponent, in particular a vertically interconnected microcomponent according to any one of claims 1 to 9, the method comprising: Providing a glass substrate (10) having a first side (12) and a second side (14) opposite to the first side (12), At least one internal cavity (110) and at least one external cavity (210) are produced by directing a laser beam onto one of the sides (12, 14) of the glass substrate (10) to form a filamentary crack in the volume of the glass substrate (10), and preferably, exposing the filamentary crack to an etching medium to form the at least one internal cavity (110) and at least one external cavity (210), Solid conductor material (120, 220) is embedded in the at least one internal cavity (110) and the at least one external cavity (210) to form at least one internal through-connector (100) and an external through-connector structure (200) in the glass substrate (10).

11. The method for manufacturing vertically interconnected microcomponents according to claim 10, in, Embedding the solid conductor material (120, 220) comprises depositing an adhesion layer on the wall of the corresponding cavity (110, 210), Wherein, preferably, the adhesion layer comprises titanium, chromium and / or nickel, Preferably, the adhesion layer is deposited by physical vapor deposition, dip coating, chemical vapor deposition or atomic layer deposition.

12. A method for manufacturing vertically interconnected microcomponents according to any one of claims 10 or 11, in, Embedding the solid conductor material (120, 220) comprises depositing a seed layer (130, 230) on the wall of the corresponding cavity (110, 210) or on the adhesion layer, Preferably, the seed layer (130, 230) comprises copper, and Wherein, preferably, the seed layer (130, 230) is deposited by physical vapor deposition or chemical plating or chemical vapor deposition or atomic layer deposition.

13. A method for manufacturing vertically interconnected microcomponents according to any one of claims 10 to 12, in, Embedding the solid conductor material (220) comprises filling the respective cavities completely or partially with the conductor material, preferably after depositing the adhesion layer and / or the seed layer, Wherein, preferably, the conductor material comprises copper, and Therein, preferably, the filling is applied by electroplating.

14. A method for manufacturing vertically interconnected microcomponents according to any one of claims 10 to 13, in, After embedding the solid conductor material (220) into the at least one internal cavity (110) and the at least one external cavity (210), excess material is removed from at least one of the sides (12, 14) of the glass substrate (10).

15. An integrated circuit, such as a microelectromechanical system (MEMS), an image sensor (CIS), a memory (FLASH, DRAM), a processing unit (CPU), a graphics processing unit (GPU), a power supply, a power amplifier, a field programmable gate array (FPGA), comprising vertically interconnected microelements according to any one of claims 1 to 9.

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