A method for processing high-purity silicon carbide PIN for semiconductor equipment
Through the preparation and finishing method of CVD-SiC ceramic crude embryo, the problem of high-purity silicon carbide PIN product breakage during processing is solved, the processing efficiency and capacity stability are improved, and stable mass production is achieved.
Patent Information
- Application Number
- CN202411933817.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2025-04-04
AI Technical Summary
The existing high-purity silicon carbide PIN products are prone to fracture problems during processing, resulting in low processing efficiency and unstable production capacity.
The CVD-SiC ceramic crude embryo preparation method is adopted, including the graphite substrate forming a ceramic material layer through the CVD plating process, annealing treatment eliminates internal stress, removes the ceramic material layer exposed to the graphite substrate, completely removes the graphite material, obtains a pure CVD-SiC ceramic substrate, and obtains the final product through roughing and finishing.
It improves the processing efficiency of high-purity silicon carbide PIN products, reduces processing scrap rate and cost, enhances production capacity stability, and achieves stable mass production.
Smart Images
Figure CN119751075A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of high-purity silicon carbide PIN processing, and in particular to a high-purity silicon carbide PIN processing method for semiconductor equipment. Background Art
[0002] In recent years, with the further development of the semiconductor industry, silicon carbide (SiC) ceramic materials have become one of the most important semiconductor materials, and silicon carbide ceramic parts used in various equipment have been developed. CVD-SiC ceramic materials have high uniformity and purity, and the method has strong process controllability. At the same time, CVD-SiC ceramic materials have excellent thermal, electrical and chemical properties, making them very suitable for the semiconductor industry that requires high-performance materials.
[0003] At present, there is a type of high-purity silicon carbide PIN products for semiconductor equipment that are relatively long in size and small in diameter. In addition, these products have many tiny features such as bevels, chamfers, and fillets, which require high precision for dimensional tolerances, which are generally ±0.03mm. At the same time, silicon carbide ceramics have high hardness. These factors have become a problem for subsequent processing of silicon carbide ceramic materials, affecting processing efficiency. At the same time, since these products are relatively long in size and small in diameter, and CVD-SiC ceramic materials are relatively brittle, they are prone to fracture during processing, further increasing the difficulty of processing and affecting processing efficiency and production capacity stability. Summary of the invention
[0004] The purpose of the present invention is to provide a high-purity silicon carbide PIN processing method for semiconductor equipment that can not only meet the customer's usage requirements but also improve the processing efficiency of such high-purity silicon carbide PIN products in the prior art, so as to increase production capacity and achieve stable mass production.
[0005] The technical solution of the present invention is: A method for processing high-purity silicon carbide PIN for semiconductor equipment comprises the following steps: A, preparation of CVD-SiC ceramic rough embryo, forming a CVD-SiC ceramic material layer on the surface of a graphite substrate through a CVD coating process to obtain a CVD-SiC ceramic rough embryo; Next, the CVD-SiC ceramic rough blank is annealed to eliminate internal stress; B, removing a portion of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank to expose the graphite substrate inside; C, placing the CVD-SiC ceramic rough embryo into a graphite oxidation furnace for treatment, completely removing the graphite material in the CVD-SiC ceramic rough embryo, and obtaining a pure CVD-SiC ceramic substrate; D. Rough processing product preparation, roughing the pure CVD-SiC ceramic substrate to obtain a rough processing product of pure CVD-SiC ceramic; E. The rough-processed product is fine-processed to obtain a pure CVD-SiC ceramic product. The pure CVD-SiC ceramic substrate obtained by the high-purity silicon carbide PIN processing method for a semiconductor device using this solution has high purity and eliminates internal stress, which lays a good foundation for subsequent rough and fine processing, is conducive to subsequent rough and fine processing, and can meet the use requirements of customers, and improve the processing efficiency of such high-purity silicon carbide PIN products in the prior art, so as to increase production capacity and achieve stable mass production.
[0006] Preferably, the rough processed product obtained in step D is a slender round rod; The specific steps of finishing the rough-processed products in step E include: E1, insert one end of the rough-processed product into the prefabricated tube, and fill the gap between the inner wall of the prefabricated tube and the rough-processed product with wax; E2, by clamping the prefabricated tube onto the chuck of the machine tool; then, using the tool to fine-process the rough-machined product on the outside of the prefabricated tube to obtain a pure CVD-SiC ceramic product. At present, when machining this type of slender round rod (small diameter and long size) high-purity silicon carbide PIN products, on the one hand, the slender round rod products are easily broken by the chuck of the machine tool during clamping; on the other hand, due to the small force area when the chuck of the machine tool clamps the product, during the machining process, the slender round rod products are easily broken due to stress concentration in the clamping part. In order to solve the above problems, this scheme improves the specific steps of fine-processing the rough-machined product in step E, The rough-processed product is inserted into a prefabricated tube at one end, and the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to clamp the rough-processed product such as slender round bars on the chuck of the machine tool; in this way, on the one hand, the chuck of the machine tool can be prevented from directly clamping the slender round bar products, and the problem of the product being broken by the chuck of the machine tool can be avoided; on the other hand, since the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax, the clamping area of the rough-processed product can be greatly increased, and the clamping force is even, so the problem of the slender round bar products being broken due to stress concentration in the clamping part during the machining process can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0007] Preferably, the rough processed product obtained in step D is a slender round rod. The specific steps of finishing the rough-processed products in step E include: E1, insert one end of the rough-processed product into the prefabricated tube, and fill the gap between the inner wall of the prefabricated tube and the rough-processed product with wax; E2, by clamping the prefabricated tube to the chuck of the machine tool; then, using a tool to fine-process the rough-processed product on the outside of the prefabricated tube to obtain a fine-processed semi-finished product; then, disassembling the prefabricated tube, taking out the fine-processed semi-finished product, and cleaning the wax in the prefabricated tube; E3, inserting the finished end of the finished semi-finished product into the prefabricated cylinder, and filling the gap between the inner wall of the prefabricated cylinder and the finished semi-finished product with wax; E4, by clamping the prefabricated tube onto the chuck of the machine tool; then, using the tool to finish-machine the unfinished part of the finished semi-finished product on the outside of the prefabricated tube, a pure CVD-SiC ceramic product is obtained. At present, when machining this type of slender round rod (small diameter and long size) high-purity silicon carbide PIN products, on the one hand, the slender round rod products are easily broken by the chuck of the machine tool during clamping; on the other hand, due to the small force area when the chuck of the machine tool clamps the product, during the machining process, the slender round rod products are easily broken due to stress concentration in the clamping part. In order to solve the above problems, this scheme improves the specific steps of finishing the rough-machined product in step E, The rough-processed product is inserted into a prefabricated tube at one end, and the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to clamp the rough-processed product such as slender round bars on the chuck of the machine tool; in this way, on the one hand, the chuck of the machine tool can be prevented from directly clamping the slender round bar products, and the problem of the product being broken by the chuck of the machine tool can be avoided; on the other hand, since the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax, the clamping area of the rough-processed product can be greatly increased, and the clamping force is even, so the problem of the slender round bar products being broken due to stress concentration in the clamping part during the machining process can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0008] In addition, in the processing method of step E of the present scheme, a section of the rough-processed product is first fine-processed in steps E1 and E2 to obtain a fine-processed semi-finished product; then, the unfinished part of the fine-processed semi-finished product is fine-processed in steps E3 and E4 to obtain a pure CVD-SiC ceramic product; in this way, there is no need to reserve an additional clamping section in the rough-processed product, which can improve the utilization rate of the pure CVD-SiC ceramic substrate and reduce waste. At the same time, since the gap between the inner wall of the prefabricated cylinder and the fine-processed semi-finished product is filled with wax, the chuck of the machine tool will not cause damage to the fine-processed clamping part during the clamping process and the fine-processing process.
[0009] Preferably, the tool used in the finishing process in step E is a resin tool. Compared with the metal tool processing in the prior art, the resin tool processing can further effectively reduce the risk of processing fracture, thereby reducing the processing scrap rate and processing cost.
[0010] Preferably, the preparation of the rough processed product in step D comprises: D1, cutting the pure CVD-SiC ceramic substrate to obtain a rod-shaped blank of pure CVD-SiC ceramic; D2, rough machining the rod-shaped blank to obtain a rough-machined product with a set outer diameter.
[0011] Preferably, step D2 comprises: D21, inserting one end of the rod-shaped blank into the prefabricated tube, and filling the gap between the inner wall of the prefabricated tube and the rod-shaped blank with wax; D22, by clamping the prefabricated tube onto the chuck of the machine tool; then, the rod-shaped blank on the outside of the prefabricated tube is rough-machined by the tool to obtain a rough-machined product with a set outer diameter. At present, during the machining of high-purity silicon carbide PIN products with such slender rod-shaped blanks, on the one hand, the slender rod-shaped blank is easily broken by the chuck of the machine tool during clamping; on the other hand, since the force-bearing area of the chuck of the machine tool when clamping the slender rod-shaped blank is small, during the machining process, the slender rod-shaped blank is easily broken due to stress concentration in the clamping part. In order to solve the above problems, this scheme improves the specific steps of step D2, One end of the rod-shaped blank is inserted into the prefabricated tube, and the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to achieve the clamping of the rod-shaped blank on the chuck of the machine tool; in this way, on the one hand, the problem of the rod-shaped blank being broken by the chuck of the machine tool can be avoided because the chuck of the machine tool directly clamps the rod-shaped blank; on the other hand, since the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax, the clamping area of the rod-shaped blank can be greatly increased, and the clamping force is even, so the problem of the rod-shaped blank being broken due to stress concentration in the clamping part during machining can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0012] Preferably, the tool used in step D22 is a resin tool. Compared with the use of metal tool processing in the prior art, the use of resin tool processing can further effectively reduce the risk of processing fracture, thereby reducing the processing scrap rate and processing cost.
[0013] Preferably, step D2 comprises: D21, inserting one end of the rod-shaped blank into the prefabricated tube, and filling the gap between the inner wall of the prefabricated tube and the rod-shaped blank with wax; D22, by clamping the prefabricated tube to the chuck of the machine tool; then, using a tool to rough-process the rod-shaped blank outside the prefabricated tube to obtain a rough-processed semi-finished product; then, disassembling the prefabricated tube, taking out the rough-processed semi-finished product, and cleaning the wax in the prefabricated tube; D23, inserting the rough-processed end of the rough-processed semi-finished product into the prefabricated cylinder, and filling the gap between the inner wall of the prefabricated cylinder and the rough-processed semi-finished product with wax; D24, by clamping the prefabricated tube onto the chuck of the machine tool; then, using the tool to rough-machine the unrough-machined part of the rough-machined semi-finished product on the outside of the prefabricated tube to obtain a rough-machined product with a set outer diameter. At present, during the machining of this type of high-purity silicon carbide PIN products with slender rod-shaped blanks, on the one hand, the slender rod-shaped blanks are easily broken by the chuck of the machine tool during clamping; on the other hand, due to the small force area when the chuck of the machine tool clamps the slender rod-shaped blanks, during the machining process, the slender rod-shaped blanks are easily broken due to stress concentration in the clamping part. In order to solve the above problems, this scheme improves the specific steps of step D2, One end of the rod-shaped blank is inserted into the prefabricated tube, and the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to achieve the clamping of the rod-shaped blank on the chuck of the machine tool; in this way, on the one hand, the problem of the rod-shaped blank being broken by the chuck of the machine tool can be avoided because the chuck of the machine tool directly clamps the rod-shaped blank; on the other hand, since the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax, the clamping area of the rod-shaped blank can be greatly increased, and the clamping force is even, so the problem of the rod-shaped blank being broken due to stress concentration in the clamping part during machining can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0014] In addition, in the processing method of step D2 of the present scheme, a section of the rod-shaped blank is firstly rough-processed in steps D21 and D22 to obtain a rough-processed semi-finished product; then, the unrough-processed part of the rough-processed semi-finished product is rough-processed in steps D23 and D24 to obtain a pure CVD-SiC ceramic round rod; in this way, there is no need to reserve an additional clamping section in the rod-shaped blank, which can improve the utilization rate of the pure CVD-SiC ceramic substrate and reduce waste. At the same time, since the gap between the inner wall of the prefabricated cylinder and the rod-shaped blank is filled with wax, the chuck of the machine tool will not damage the clamping part that has been rough-processed during the clamping process and the rough processing process.
[0015] Preferably, the tool used in steps D22 and D24 is a resin tool. Compared with the use of metal tool processing in the prior art, the use of resin tool processing can further effectively reduce the risk of processing fracture, thereby reducing the processing scrap rate and processing cost.
[0016] Preferably, in step B, a portion of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank is removed by grinding to expose the graphite substrate inside.
[0017] The beneficial effects of the present invention are: not only can it meet the usage requirements of customers, but it can also improve the processing efficiency of such high-purity silicon carbide PIN products in the prior art, reduce the processing scrap rate and processing costs, so as to increase production capacity and achieve stable mass production. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 It is a structural schematic diagram of an existing high-purity silicon carbide PIN product for semiconductor equipment. DETAILED DESCRIPTION
[0019] Specific embodiment 1, a method for processing high-purity silicon carbide PIN for semiconductor equipment, comprising the following steps: A, CVD-SiC ceramic rough embryo preparation, the graphite substrate is subjected to a CVD coating process to form a CVD-SiC ceramic material layer on the surface of the graphite substrate to obtain a CVD-SiC ceramic rough embryo.
[0020] Next, the CVD-SiC ceramic rough blank is annealed to eliminate internal stress.
[0021] B, a portion of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank is removed to expose the graphite substrate inside.
[0022] C, placing the CVD-SiC ceramic rough embryo into a graphite oxidation furnace for treatment, completely removing the graphite material in the CVD-SiC ceramic rough embryo, and obtaining a pure CVD-SiC ceramic substrate.
[0023] D. Rough processing product preparation, roughing the pure CVD-SiC ceramic substrate to obtain the rough processing product of pure CVD-SiC ceramic. Specifically including the following steps: D1, cutting the pure CVD-SiC ceramic substrate to obtain a rod-shaped blank of pure CVD-SiC ceramic.
[0024] D2, rough processing is performed on the rod-shaped blank to obtain a rough processed product with a set outer diameter. In this embodiment, the rough processed product is a slender round rod.
[0025] E. The rough-processed product is fine-processed to obtain a pure CVD-SiC ceramic product. The pure CVD-SiC ceramic substrate obtained by the high-purity silicon carbide PIN processing method for semiconductor equipment of this embodiment has high purity and eliminates internal stress, which lays a good foundation for subsequent rough-finish processing and is conducive to subsequent rough-finish processing, thereby meeting the use requirements of customers and improving processing efficiency, thereby increasing production capacity and achieving stable mass production.
[0026] Specifically, the shape of the graphite substrate in step A can be selected as needed, for example, a block graphite substrate or a rod graphite substrate is used, and the rod graphite substrate can be a rod graphite substrate with a circular, square or other polygonal cross section.
[0027] Taking a rod-shaped graphite substrate with a square cross section as an example, in step B, one of the side surfaces of the rod-shaped graphite substrate is removed to expose the graphite substrate inside. Of course, a portion of one of the side surfaces of the rod-shaped graphite substrate may also be removed to expose the graphite substrate inside.
[0028] Furthermore, in step B, a part of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank is removed by grinding to expose the internal graphite substrate. Of course, it should be noted that in step B, other processing methods can also be used to remove a part of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank, such as machining methods such as cutting or washing.
[0029] Specific embodiment 2, a method for processing high-purity silicon carbide PIN for semiconductor equipment, in this embodiment, the method is to process Figure 1 The product in the middle is described as an example. The product includes 3 features. The first feature 1 is 30mm long, Φ1.5mm, and the accuracy is ±0.5mm; the second feature 2 is 10mm long, Φ1.3mm, and the accuracy is +0.08mm / -0.03mm; the third feature 3 is a cone with a length of 1.5mm. The specific processing method includes the following steps: A, CVD-SiC ceramic rough blank preparation, the graphite substrate is subjected to a CVD coating process to form a CVD-SiC ceramic material layer on the surface of the graphite substrate to obtain a rod-shaped CVD-SiC ceramic rough blank. In this step, a rod-shaped graphite substrate with a square cross section is used.
[0030] Next, the rod-shaped CVD-SiC ceramic rough blank is annealed to eliminate internal stress.
[0031] B, removing a portion of the CVD-SiC ceramic material layer on the surface of the rod-shaped CVD-SiC ceramic rough blank to expose the internal graphite substrate. In this step, a portion of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank is removed by grinding to expose the internal graphite substrate. Of course, it should be noted that in this step, other processing methods can also be used to remove a portion of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank, such as machining methods such as cutting or washing.
[0032] C, placing the CVD-SiC ceramic rough embryo into a graphite oxidation furnace for treatment, completely removing the graphite material in the rod-shaped CVD-SiC ceramic rough embryo, and obtaining a pure CVD-SiC ceramic rod-shaped substrate.
[0033] D. Preparation of rough-processed products: rough-processing the pure CVD-SiC ceramic rod substrate to obtain the rough-processed products of pure CVD-SiC ceramics. Specifically, the following steps are included: D1, cutting the pure CVD-SiC ceramic substrate to obtain a rod-shaped blank of pure CVD-SiC ceramic. The cross section of the rod-shaped blank is square, the side length of the square is 3 mm, and the length of the rod-shaped blank is 60 mm.
[0034] D2, the rod-shaped blank is rough-processed by a CNC machine tool to obtain a rough-processed product with a set outer diameter. The outer diameter of the rough-processed product is 2.8mm and the length is 60mm.
[0035] E. Perform fine processing on the rough processed product to obtain a pure CVD-SiC ceramic product. Specifically, a CNC machine tool is used to perform fine processing on the rough processed product to obtain Figure 1 The feed rate in the finishing process is 0.0003-0.0008mm / min. Of course, the feed rate in the finishing process of different products can be adjusted as needed.
[0036] The pure CVD-SiC ceramic substrate obtained by the high-purity silicon carbide PIN processing method for a semiconductor device using the present embodiment has high purity and eliminates internal stress, thereby establishing a good foundation for subsequent rough and fine processing, being beneficial to subsequent rough and fine processing, and thus being able to meet customer usage requirements and improve processing efficiency, thereby increasing production capacity and achieving stable mass production.
[0037] The above is only one embodiment of the present invention. High-purity silicon carbide PIN products with different characteristics can be processed according to this processing method to improve production capacity and achieve stable mass production.
[0038] Specific embodiment 3: The specific steps of a method for processing high-purity silicon carbide PIN for semiconductor equipment in this embodiment refer to specific embodiment 1 or specific embodiment 2, the difference being that: In step D2, the rod-shaped blank is rough-machined to obtain a rough-machined product with a set outer diameter. The specific processing steps include: D21, insert one end of the rod-shaped blank into the prefabricated cylinder, and fill the gap between the inner wall of the prefabricated cylinder and the rod-shaped blank with wax. In this embodiment, the length of one end of the rod-shaped blank inserted into the prefabricated cylinder is 1 / 6-1 / 4 of the length of the rod-shaped blank. The prefabricated cylinder can be a metal prefabricated cylinder or a plastic prefabricated cylinder. In this embodiment, the prefabricated cylinder is a metal prefabricated cylinder.
[0039] In one embodiment, one end of the rod-shaped blank is first inserted into the prefabricated tube, and then the wax melted into liquid is filled into the gap between the inner wall of the prefabricated tube and the rod-shaped blank. The wax is then solidified to fill the gap between the inner wall of the prefabricated tube and the rod-shaped blank.
[0040] In another embodiment, solid wax is first placed in the prefabricated tube, and then one end of the rod-shaped blank is inserted into the prefabricated tube. Then, the prefabricated tube is heated to melt the wax and fill the gap between the inner wall of the prefabricated tube and the rod-shaped blank. The wax is then solidified to fill the gap between the inner wall of the prefabricated tube and the rod-shaped blank.
[0041] D22, by clamping the prefabricated tube onto the chuck of the machine tool; then, the rod-shaped blank on the outside of the prefabricated tube is rough-machined by the tool of the machine tool to obtain a rough-machined product with a set outer diameter. At present, when machining such high-purity silicon carbide PIN products with slender rod-shaped blanks, on the one hand, the slender rod-shaped blank is easily broken by the chuck of the machine tool during clamping; on the other hand, since the force-bearing area of the chuck of the machine tool when clamping the slender rod-shaped blank is small, during the machining process, the slender rod-shaped blank is easily broken due to stress concentration in the clamping part. In order to solve the above problems, this embodiment improves the specific steps of step D2, One end of the rod-shaped blank is inserted into the prefabricated tube, and the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to achieve the clamping of the rod-shaped blank on the chuck of the machine tool; in this way, on the one hand, the problem of the rod-shaped blank being broken by the chuck of the machine tool can be avoided because the chuck of the machine tool directly clamps the rod-shaped blank; on the other hand, since the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax, the clamping area of the rod-shaped blank can be greatly increased, and the clamping force is even, so the problem of the rod-shaped blank being broken due to stress concentration in the clamping part during machining can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0042] Furthermore, the tool used in step D22 is a resin tool. Compared with the use of metal tool processing in the prior art, the use of resin tool processing can further effectively reduce the risk of processing breakage, thereby reducing the processing scrap rate and processing cost.
[0043] Furthermore, in step E, the specific steps of fine processing the rough-processed product to obtain a pure CVD-SiC ceramic product include: E1, insert one end of the rough-processed product into the prefabricated tube (specifically, insert the end of the rough-processed product that has not been rough-processed into the prefabricated tube), and use wax to fill the gap between the inner wall of the prefabricated tube and the rough-processed product.
[0044] In one embodiment, one end of the rough-processed product is first inserted into the prefabricated cylinder, and then the wax melted into liquid is used to fill the gap between the inner wall of the prefabricated cylinder and the rough-processed product. The wax is then solidified to fill the gap between the inner wall of the prefabricated cylinder and the rough-processed product.
[0045] In another embodiment, solid wax is first placed in the prefabricated tube, and then one end of the rough-processed product is inserted into the prefabricated tube. Then, the prefabricated tube is heated to melt the wax and fill the gap between the inner wall of the prefabricated tube and the rough-processed product. The wax is then solidified to fill the gap between the inner wall of the prefabricated tube and the rough-processed product.
[0046] E2, by clamping the prefabricated tube to the chuck of the machine tool; then, the rough-machined product on the outside of the prefabricated tube is fine-machined by the tool of the machine tool to obtain a pure CVD-SiC ceramic product.
[0047] At present, when machining this type of high-purity silicon carbide PIN products, which are thin and long round rods (small diameter and long size), on the one hand, the thin and long round rods are easily broken by the chuck of the machine tool during clamping; on the other hand, since the force-bearing area of the chuck of the machine tool is small when clamping the product, the thin and long round rods are easily broken during the machining process due to stress concentration at the clamping part. In order to solve the above problems, this embodiment improves the specific steps of fine machining the rough-machined product in step E. The rough-processed product is inserted into a prefabricated tube at one end, and the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to clamp the rough-processed product such as slender round bars on the chuck of the machine tool; in this way, on the one hand, the chuck of the machine tool can be prevented from directly clamping the slender round bar products, and the problem of the product being broken by the chuck of the machine tool can be avoided; on the other hand, since the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax, the clamping area of the rough-processed product can be greatly increased, and the clamping force is even, so the problem of the slender round bar products being broken due to stress concentration in the clamping part during the machining process can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0048] Furthermore, the tool used in the finishing process in step E is a resin tool, and specifically, the tool used in step E2 is a resin tool. Compared with the use of metal tool processing in the prior art, the use of resin tool processing can further effectively reduce the risk of processing breakage, thereby reducing the processing scrap rate and processing cost.
[0049] Specific embodiment 4: The specific steps of a method for processing high-purity silicon carbide PIN for semiconductor equipment in this embodiment refer to specific embodiment 1 or specific embodiment 2, the difference being that: In step D2, the rod-shaped blank is rough-machined to obtain a rough-machined product with a set outer diameter. The specific processing steps include: D21, insert one end of the rod-shaped blank into the prefabricated cylinder, and fill the gap between the inner wall of the prefabricated cylinder and the rod-shaped blank with wax. In this embodiment, the length of one end of the rod-shaped blank inserted into the prefabricated cylinder is 1 / 6-1 / 4 of the length of the rod-shaped blank. The prefabricated cylinder can be a metal prefabricated cylinder or a plastic prefabricated cylinder. In this embodiment, the prefabricated cylinder is a metal prefabricated cylinder.
[0050] In one embodiment, one end of the rod-shaped blank is first inserted into the prefabricated tube, and then the wax melted into liquid is filled into the gap between the inner wall of the prefabricated tube and the rod-shaped blank. The wax is then solidified to fill the gap between the inner wall of the prefabricated tube and the rod-shaped blank.
[0051] In another embodiment, solid wax is first placed in the prefabricated tube, and then one end of the rod-shaped blank is inserted into the prefabricated tube. Then, the prefabricated tube is heated to melt the wax and fill the gap between the inner wall of the prefabricated tube and the rod-shaped blank. The wax is then solidified to fill the gap between the inner wall of the prefabricated tube and the rod-shaped blank.
[0052] D22, by clamping the prefabricated tube to the chuck of the machine tool; then, using a tool to rough-process the rod-shaped blank on the outside of the prefabricated tube to obtain a rough-processed semi-finished product; then, disassembling the prefabricated tube, taking out the rough-processed semi-finished product, and cleaning the wax in the prefabricated tube.
[0053] D23, insert the rough-processed end of the rough-processed semi-finished product into the prefabricated tube, and use wax to fill the gap between the inner wall of the prefabricated tube and the rough-processed semi-finished product. The specific operation method of this step can refer to step D21.
[0054] D24, by clamping the prefabricated tube on the chuck of the machine tool; then, rough-machining the unrough-machined part of the rough-machining semi-finished product on the outer side of the prefabricated tube by a tool to obtain a rough-machining product with a set outer diameter.
[0055] At present, when machining high-purity silicon carbide PIN products of this type of slender rod-shaped blank, on the one hand, the slender rod-shaped blank is easily broken by the chuck of the machine tool during clamping; on the other hand, since the force-bearing area of the chuck of the machine tool when clamping the slender rod-shaped blank is small, during the machining process, the slender rod-shaped blank is easily broken due to stress concentration at the clamping part. In order to solve the above problems, this embodiment improves the specific steps of step D2. One end of the rod-shaped blank is inserted into the prefabricated tube, and the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to achieve the clamping of the rod-shaped blank on the chuck of the machine tool; in this way, on the one hand, the problem of the rod-shaped blank being broken by the chuck of the machine tool can be avoided because the chuck of the machine tool directly clamps the rod-shaped blank; on the other hand, since the gap between the inner wall of the prefabricated tube and the rod-shaped blank is filled with wax, the clamping area of the rod-shaped blank can be greatly increased, and the clamping force is even, so the problem of the rod-shaped blank being broken due to stress concentration in the clamping part during machining can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0056] In addition, in the processing method of step D2 of this embodiment, a section of the rod-shaped blank is firstly rough-processed in steps D21 and D22 to obtain a rough-processed semi-finished product; then, the unrough-processed part of the rough-processed semi-finished product is rough-processed in steps D23 and D24 to obtain a pure CVD-SiC ceramic round rod; in this way, there is no need to reserve an additional clamping portion in the rod-shaped blank, which can improve the utilization rate of the pure CVD-SiC ceramic substrate and reduce waste. At the same time, since the gap between the inner wall of the prefabricated cylinder and the rod-shaped blank is filled with wax, the chuck of the machine tool will not cause damage to the clamping part that has been rough-processed during the clamping process and the rough processing process.
[0057] Furthermore, the cutters used in steps D22 and D24 are resin cutters. Compared with the use of metal cutters in the prior art, the use of resin cutters can further effectively reduce the risk of breakage during processing, thereby reducing the processing scrap rate and processing costs.
[0058] Furthermore, in step E, the specific steps of fine processing the rough-processed product to obtain a pure CVD-SiC ceramic product include: E1, insert one end of the rough-processed product into the prefabricated tube, and use wax to fill the gap between the inner wall of the prefabricated tube and the rough-processed product. In this embodiment, the length of one end of the rough-processed product inserted into the prefabricated tube is 1 / 6-1 / 4 of the length of the rough-processed product.
[0059] In one embodiment, one end of the rough-processed product is first inserted into the prefabricated cylinder, and then the wax melted into liquid is used to fill the gap between the inner wall of the prefabricated cylinder and the rough-processed product. The wax is then solidified to fill the gap between the inner wall of the prefabricated cylinder and the rough-processed product.
[0060] In another embodiment, solid wax is first placed in the prefabricated tube, and then one end of the rough-processed product is inserted into the prefabricated tube. Then, the prefabricated tube is heated to melt the wax and fill the gap between the inner wall of the prefabricated tube and the rough-processed product. The wax is then solidified to fill the gap between the inner wall of the prefabricated tube and the rough-processed product.
[0061] E2, by clamping the prefabricated tube to the chuck of the machine tool; then, using the tool to fine-process the rough-processed product on the outside of the prefabricated tube to obtain a fine-processed semi-finished product; then, disassembling the prefabricated tube, taking out the fine-processed semi-finished product, and cleaning the wax in the prefabricated tube.
[0062] E3, insert the finished end of the finished semi-finished product into the prefabricated tube, and use wax to fill the gap between the inner wall of the prefabricated tube and the finished semi-finished product. The specific operation method of this step can refer to step E1.
[0063] E4, by clamping the prefabricated tube to the chuck of the machine tool; then, using a tool to finish the unfinished part of the finished semi-finished product on the outside of the prefabricated tube to obtain a pure CVD-SiC ceramic product.
[0064] At present, when machining this type of high-purity silicon carbide PIN products, which are thin and long round rods (small diameter and long size), on the one hand, the thin and long round rods are easily broken by the chuck of the machine tool during clamping; on the other hand, since the force-bearing area of the chuck of the machine tool is small when clamping the product, the thin and long round rods are easily broken during the machining process due to stress concentration at the clamping part. In order to solve the above problems, this embodiment improves the specific steps of fine machining the rough-machined product in step E. The rough-processed product is inserted into a prefabricated tube at one end, and the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax; then the prefabricated tube is clamped on the chuck of the machine tool to clamp the rough-processed product such as slender round bars on the chuck of the machine tool; in this way, on the one hand, the chuck of the machine tool can be prevented from directly clamping the slender round bar products, and the problem of the product being broken by the chuck of the machine tool can be avoided; on the other hand, since the gap between the inner wall of the prefabricated tube and the rough-processed product is filled with wax, the clamping area of the rough-processed product can be greatly increased, and the clamping force is even, so the problem of the slender round bar products being broken due to stress concentration in the clamping part during the machining process can be effectively solved. Based on this, the processing stability of the product can be effectively improved, the processing scrap rate and processing cost can be reduced, thereby improving the processing efficiency, increasing the production capacity, and facilitating the realization of stable mass production.
[0065] In addition, in the processing method of step E of this embodiment, a section of the rough-processed product is first fine-processed in steps E1 and E2 to obtain a fine-processed semi-finished product; then, the unfinished part of the fine-processed semi-finished product is fine-processed in steps E3 and E4 to obtain a pure CVD-SiC ceramic product; in this way, there is no need to reserve an additional clamping portion in the rough-processed product, which can improve the utilization rate of the pure CVD-SiC ceramic substrate and reduce waste. At the same time, since the gap between the inner wall of the prefabricated cylinder and the fine-processed semi-finished product is filled with wax, the chuck of the machine tool will not cause damage to the clamping part that has been fine-processed during the clamping process and the fine-processing process.
[0066] Furthermore, the tool used in the finishing process in step E is a resin tool, and specifically, the tool used in steps E2 and E4 is a resin tool. Compared with the use of metal tool processing in the prior art, the use of resin tool processing can further effectively reduce the risk of processing breakage, thereby reducing the processing scrap rate and processing cost.
[0067] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any simple modification, change and equivalent transformation made to the above embodiment based on the technical essence of the present invention still falls within the protection scope of the technical solution of the present invention.
Claims
1. A method for processing high-purity silicon carbide PIN for semiconductor devices, characterized in that: The following steps are involved: A, preparation of CVD-SiC ceramic rough embryo, forming a CVD-SiC ceramic material layer on the surface of a graphite substrate through a CVD coating process to obtain a CVD-SiC ceramic rough embryo; Next, the CVD-SiC ceramic rough blank is annealed to eliminate internal stress; B, removing a portion of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank to expose the graphite substrate inside; C, placing the CVD-SiC ceramic rough embryo into a graphite oxidation furnace for treatment, completely removing the graphite material in the CVD-SiC ceramic rough embryo, and obtaining a pure CVD-SiC ceramic substrate; D. Rough processing product preparation, roughing the pure CVD-SiC ceramic substrate to obtain a rough processing product of pure CVD-SiC ceramic; E. The rough-processed product is fine-processed to obtain a pure CVD-SiC ceramic product.
2. The method for processing high-purity silicon carbide PIN for semiconductor equipment according to claim 1, characterized in that: The rough-processed product obtained in step D is a slender round bar; The specific steps of finishing the rough-processed products in step E include: E1, insert one end of the rough-processed product into the prefabricated tube, and fill the gap between the inner wall of the prefabricated tube and the rough-processed product with wax; E2, by clamping the prefabricated tube to the chuck of the machine tool; then, the rough-machined product on the outside of the prefabricated tube is fine-machined by a tool to obtain a pure CVD-SiC ceramic product.
3. The method for processing high-purity silicon carbide PIN for semiconductor equipment according to claim 1, characterized in that: The rough processed product obtained in step D is a slender round bar. The specific steps of finishing the rough-processed products in step E include: E1, insert one end of the rough-processed product into the prefabricated tube, and fill the gap between the inner wall of the prefabricated tube and the rough-processed product with wax; E2, by clamping the prefabricated tube to the chuck of the machine tool; then, using a tool to fine-process the rough-processed product on the outside of the prefabricated tube to obtain a fine-processed semi-finished product; then, disassembling the prefabricated tube, taking out the fine-processed semi-finished product, and cleaning the wax in the prefabricated tube; E3, inserting the finished end of the finished semi-finished product into the prefabricated cylinder, and filling the gap between the inner wall of the prefabricated cylinder and the finished semi-finished product with wax; E4, by clamping the prefabricated tube to the chuck of the machine tool; then, using a tool to finish the unfinished part of the finished semi-finished product on the outside of the prefabricated tube to obtain a pure CVD-SiC ceramic product.
4. A method for processing high-purity silicon carbide PIN for semiconductor equipment according to claim 2 or 3, characterized in that: The tool used in the finishing process in step E is a resin tool.
5. A method for processing high-purity silicon carbide PIN for semiconductor equipment according to claim 1, 2 or 3, characterized in that: The preparation of the rough processed product in step D comprises: D1, cutting the pure CVD-SiC ceramic substrate to obtain a rod-shaped blank of pure CVD-SiC ceramic; D2, rough machining the rod-shaped blank to obtain a rough-machined product with a set outer diameter.
6. The method for processing high-purity silicon carbide PIN for semiconductor devices according to claim 5, characterized in that: The D2 step includes: D21, inserting one end of the rod-shaped blank into the prefabricated tube, and filling the gap between the inner wall of the prefabricated tube and the rod-shaped blank with wax; D22, by clamping the prefabricated tube on the chuck of the machine tool; then, using a tool to rough-process the rod-shaped blank on the outside of the prefabricated tube to obtain a rough-processed product with a set outer diameter.
7. A method for processing high-purity silicon carbide PIN for semiconductor devices according to claim 6, characterized in that: The tool used in the step D22 is a resin tool.
8. The method for processing high-purity silicon carbide PIN for semiconductor devices according to claim 5, characterized in that: The D2 step includes: D21, inserting one end of the rod-shaped blank into the prefabricated tube, and filling the gap between the inner wall of the prefabricated tube and the rod-shaped blank with wax; D22, by clamping the prefabricated tube to the chuck of the machine tool; then, using a tool to rough-process the rod-shaped blank on the outside of the prefabricated tube to obtain a rough-processed semi-finished product; then, disassembling the prefabricated tube, taking out the rough-processed semi-finished product, and cleaning the wax in the prefabricated tube; D23, inserting the rough-processed end of the rough-processed semi-finished product into the prefabricated cylinder, and filling the gap between the inner wall of the prefabricated cylinder and the rough-processed semi-finished product with wax; D24, by clamping the prefabricated tube on the chuck of the machine tool; then, rough-machining the unrough-machined part of the rough-machining semi-finished product on the outer side of the prefabricated tube by a tool to obtain a rough-machining product with a set outer diameter.
9. The method for processing high-purity silicon carbide PIN for semiconductor devices according to claim 8, characterized in that: The cutters used in steps D22 and D24 are resin cutters.
10. A method for processing high-purity silicon carbide PIN for semiconductor devices according to claim 1, 2 or 3, characterized in that: In the step B, a portion of the CVD-SiC ceramic material layer on the surface of the CVD-SiC ceramic rough blank is removed by grinding to expose the graphite substrate inside.