Organic semiconductor nanoparticle ink, preparation method thereof and electronic device

Abstract

The invention relates to the field of organic semiconductor nanoparticle ink, and particularly discloses organic semiconductor nanoparticle ink, a preparation method thereof and an electronic device. The preparation method comprises the following steps: dissolving an organic semiconductor material in an organic solvent to prepare an organic semiconductor solution; the preparation method comprises the following steps: dissolving poloxamer in deionized water to prepare a poloxamer aqueous solution; dispersing the organic semiconductor solution in the poloxamer aqueous solution, and volatilizing the organic solvent; carrying out cooling treatment on the solution after the organic solvent is volatilized; and carrying out centrifugal filtration treatment on the cooled solution to obtain the organic semiconductor nanoparticle ink. The invention aims to reduce electron traps on the organic semiconductor film, realize effective transmission of charges, and further improve the performance of the organic electronic device.

Description

Technical Field

[0001] The present application belongs to the field of organic semiconductor ink, and specifically relates to an organic semiconductor nanoparticle ink and a preparation method thereof, and an electronic device. Background Art

[0002] Organic electronic devices are a new type of electronic devices made of carbon-based organic semiconductor materials that produce lower carbon emissions than traditional inorganic electronics. Most organic semiconductor materials require the use of highly toxic, corrosive halogenated and aromatic solvents to process organic electronic devices. The solution processing process not only corrodes the processing equipment and increases costs, but also pollutes the environment, causes harm to the human body, and may even cause cancer. Therefore, using environmentally friendly solvents instead of traditional toxic solvents is an urgent problem that needs to be solved.

[0003] Water / alcohol is a type of highly polar and low-toxic solvent, and is an ideal solvent for processing organic electronic devices. Due to the hydrophobicity of organic semiconductor materials, organic semiconductor materials need to be dispersed in water / alcohol to make organic semiconductor nanoparticle ink, and then the organic semiconductor nanoparticle ink is used for processing organic electronic devices. However, the polar groups of the surfactant introduced by this process will form electron traps in the organic semiconductor film and hinder the effective transfer of charges, resulting in poor performance of the prepared organic electronic devices. Summary of the invention

[0004] The present application provides an organic semiconductor nanoparticle ink and a preparation method thereof, and an electronic device, which are intended to reduce electron traps on organic semiconductor films, achieve effective charge transfer, and thereby improve the performance of organic electronic devices.

[0005] In a first aspect, the present application provides a method for preparing an organic semiconductor nanoparticle ink, the method comprising:

[0006] dissolving an organic semiconductor material in an organic solvent to prepare an organic semiconductor solution;

[0007] Dissolving poloxamer in deionized water to prepare a poloxamer aqueous solution;

[0008] dispersing the organic semiconductor solution in the poloxamer aqueous solution and volatilizing the organic solvent;

[0009] Cooling the solution after the organic solvent evaporates;

[0010] The solution after the cooling treatment is subjected to centrifugal filtration treatment to obtain organic semiconductor nanoparticle ink.

[0011] In a second aspect, the present application provides an organic semiconductor nanoparticle ink, which is prepared by using the above-mentioned method for preparing the organic semiconductor nanoparticle ink.

[0012] In a third aspect, the present application provides an electronic device, which is prepared using the organic semiconductor nanoparticle ink described above.

[0013] The present application provides an organic semiconductor nanoparticle ink and a preparation method thereof, and an electronic device. The method uses poloxamer as a surfactant for the preparation of the organic semiconductor nanoparticle ink, utilizes the characteristic that the critical micelle concentration (CMC) of poloxamer increases rapidly with decreasing temperature, and by lowering the temperature of the solution, the poloxamer is transformed from a micellar state to a free state, and centrifugal filtration is combined to remove the poloxamer, thereby achieving the stripping of the surfactant in the organic semiconductor nanoparticle ink, reducing the surfactant residue, thereby reducing the electron traps on the organic semiconductor film, achieving effective charge transfer, and improving the performance of the organic electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] Figure 1 It is a schematic diagram of the chemical structure of some traditional surfactants used to prepare organic semiconductor nanoparticle ink;

[0016] Figure 2 It is a flow chart of the steps of a method for preparing an organic semiconductor nanoparticle ink provided in the present application;

[0017] Figure 3 Schematic diagram of the chemical structure of P3HT and O-IDTBR provided in the examples of the present application;

[0018] Figure 4 It is a schematic diagram of the process of dispersing organic semiconductor materials in water using an emulsion method;

[0019] Figure 5 is a schematic diagram of the process of dispersing organic semiconductor materials in water using the reprecipitation method;

[0020] Figure 6 This is a schematic diagram of a process of centrifugally filtering a solution after a cooling treatment provided in an embodiment of the present application;

[0021] Figure 7It is a schematic diagram of a process of stripping poloxamer from an organic semiconductor nanoparticle ink provided in the present application;

[0022] Figure 8 It is the zeta potential diagram of P3HT:O-IDTBR nanoparticle ink prepared based on SDS and DTAB in the embodiments of the present application;

[0023] Figure 9a The P3HT:O-IDTBR nanoparticle ink prepared by SDS is 450-4000 cm -1 Fourier infrared spectrum at ;

[0024] Figure 9b The P3HT:O-IDTBR nanoparticle ink prepared by SDS is 500-3500cm -1 Fourier infrared spectrum at ;

[0025] Fig.10a The P3HT:O-IDTBR nanoparticle ink prepared in the embodiment of the present application is 500-4000cm -1 Where Fourier transform infrared spectra;

[0026] Fig.10b The P3HT:O-IDTBR nanoparticle ink prepared in the present application example is 500-2000 cm -1 Fourier infrared spectrum at . DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0029] It should also be understood that the terms used in this application specification are only for the purpose of describing specific embodiments and are not intended to limit the application. As used in this application specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0030] It should be further understood that the term “and / or” used in the specification and appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0031] Below in conjunction with the accompanying drawings, some embodiments of the present application are described in detail. In the case of no conflict, the following embodiments and the features in the embodiments can be combined with each other. Unless otherwise specified, the reagents, methods and equipment used in this application are conventionally selected in the art.

[0032] Organic electronic devices are a new type of electronic devices made of carbon-based organic semiconductor materials that produce lower carbon emissions than traditional inorganic electronics. Compared with traditional inorganic semiconductors, organic semiconductors can not only be processed by solution method at room temperature, but also by roll-to-roll technology, thus achieving low-cost production. However, most organic semiconductor materials require the use of highly toxic, corrosive halogenated and aromatic solvents for the processing of organic electronic devices. The solution processing process not only corrodes the processing equipment and increases the cost, but also pollutes the environment, causes harm to the human body and may even cause cancer. Therefore, the use of environmentally friendly solvents instead of traditional toxic solvents is an urgent problem that needs to be solved.

[0033] Water / alcohol is an ideal solvent for processing organic electronic devices. Due to the hydrophobicity of organic semiconductor materials, it is necessary to disperse the organic semiconductor materials in water / alcohol to make organic semiconductor nanoparticle ink, and then use the organic semiconductor nanoparticle ink for processing organic electronic devices.

[0034] See also Figure 1 , Figure 1 The figure is a schematic diagram of the chemical structure of some traditional surfactants used to prepare organic semiconductor nanoparticle inks. These surfactants have a hydrophilic group at one end and a hydrophobic alkyl chain at the other end, and are a type of amphiphilic molecule.

[0035] In the traditional process, an organic semiconductor solution is mixed with an aqueous surfactant solution under ultrasonic or stirring conditions; due to the amphiphilicity of the surfactant, the surfactant will aggregate at the hydrophilic / hydrophobic interface and thus aggregate on the surface of the organic semiconductor nanoparticles, thereby stabilizing the nanoparticles; after the organic solvent is evaporated, an organic semiconductor nanoparticle ink dispersed in water is obtained.

[0036] The main problem with this process is that during the processing of organic semiconductor nanoparticle ink into thin films and organic electronic devices, the polar groups of the surfactants in the organic semiconductor nanoparticle ink will form electron traps in the organic semiconductor film and hinder the effective transfer of charges, resulting in poor performance of the prepared organic electronic devices.

[0037] To solve the above problems, see Figure 2 , Figure 2 This is a flow chart of the steps of a method for preparing an organic semiconductor nanoparticle ink provided in this application. Figure 2 As shown, the preparation method specifically includes: step S101 to step S105.

[0038] S101. Dissolving an organic semiconductor material in an organic solvent to prepare an organic semiconductor solution.

[0039] The organic semiconductor material may include one of an organic photovoltaic material, an organic luminescent dye, and an organic transistor material; and the organic solvent may include chloroform, chlorobenzene, toluene, or tetrahydrofuran.

[0040] In the embodiments of the present application, an organic photovoltaic material is used as an organic semiconductor material to prepare an organic semiconductor solution, and tetrahydrofuran is used as an organic solvent. Figure 3 As shown, the organic photovoltaic material may include poly(3-hexylthiophene-2,5-diyl) (P3HT) and 1,4-bis(2-ethylbutyrol)benzene(1,3-benzothiadiazo[3,4-c:4',3'-f]carbazole-6,9-diylcarbaldehydebran) (O-IDTBR).

[0041] In some embodiments, when preparing an organic semiconductor solution, an organic semiconductor material is added to an organic solvent, and the organic semiconductor solution is obtained by heating and stirring.

[0042] Specifically, the organic photovoltaic material is added to the organic solvent, and the solution is heated and stirred to obtain an organic photovoltaic material solution with a concentration of 0.5-35 mg / mL, a heating temperature of 35-55°C, and a stirring time of 3 hours. The heating temperature range and stirring time can achieve the purpose of fully dissolving the organic semiconductor in the organic solvent.

[0043] S102, dissolving poloxamer in deionized water to prepare a poloxamer aqueous solution.

[0044] Among them, the chemical formula of poloxamer is HO(C2H4O) x (C3H6O) y (C2H4O) x H, x is 2-130, y is 15-67.

[0045] In the examples of the present application, poloxamer 407 (x is 95-105, y is 54-60, and the average molecular weight is 9840-14600) is used to prepare the poloxamer aqueous solution.

[0046] In some embodiments, poloxamer powder is added into deionized water, and the mixture is heated and stirred to obtain a poloxamer aqueous solution.

[0047] Specifically, poloxamer 407 powder is added to deionized water, and the solution is heated and stirred to prepare a poloxamer aqueous solution. The concentration of the poloxamer aqueous solution is 10-20 mg / mL, and the heating temperature is 36-44° C. The heating range achieves the purpose of completely dissolving the poloxamer in deionized water.

[0048] S103, dispersing the organic semiconductor solution in the poloxamer aqueous solution, and volatilizing the organic solvent.

[0049] Among them, the method of dispersing the organic semiconductor solution in the poloxamer aqueous solution can be an emulsion method or a reprecipitation method, and the corresponding methods of volatilizing the organic solvent are heating volatilization or nitrogen flow volatilization; during the preparation process, it is necessary to ensure that the poloxamer is in excess, that is, the mass of the organic semiconductor is less than the mass of the poloxamer.

[0050] See also Figure 4 , Figure 4 This is a schematic diagram of the process of dispersing organic semiconductor materials in water using an emulsion method. The organic semiconductor solution and the poloxamer aqueous solution are mixed and ultrasonically treated to obtain a microemulsion system. After that, the organic solvent is volatilized to disperse the organic semiconductor material in the poloxamer aqueous solution.

[0051] In some embodiments, Figure 4 As shown, the organic semiconductor solution is uniformly dispersed in the poloxamer aqueous solution by using an emulsion method. The organic semiconductor solution and the poloxamer aqueous solution are heated and stirred, the heating and stirring temperature is 36-44°C, and the stirring time is 1 hour. Under ice bath conditions, the mixed solution after heating and stirring is ultrasonically treated, and the ultrasonic time is 5 minutes; the organic solvent in the mixed solution after ultrasonic treatment is volatilized, and the volatilization method is heating volatilization.

[0052] Specifically, a P3HT:O-IDTBR chloroform solution is added to a poloxamer aqueous solution so that the volume ratio of the P3HT:O-IDTBR chloroform solution to the poloxamer aqueous solution is 1:6, the heating and stirring temperature is 36-44°C, and the stirring time is 1h; under ice bath conditions, the mixed solution is ultrasonically treated with a cell disruptor to obtain a microemulsion system, and the ultrasonic time is 5min; the microemulsion system is heated to volatilize the chloroform, and the heating temperature is 65-75°C.

[0053] See also Figure 5 , Figure 5 This is a schematic diagram of the process of dispersing organic semiconductor materials in water using the reprecipitation method. Under ultrasound, the organic semiconductor solution is dropped into the poloxamer aqueous solution to cause the poloxamer to aggregate on the surface of the organic semiconductor nanoparticles. After that, the organic solvent is volatilized to disperse the organic semiconductor material in the poloxamer aqueous solution.

[0054] In other embodiments, Figure 5 As shown, the organic semiconductor solution is uniformly dispersed in the poloxamer aqueous solution by a reprecipitation method. The poloxamer aqueous solution is placed in an ultrasonic cleaning machine, and the organic semiconductor solution is dripped into the poloxamer aqueous solution drop by drop, and the mixture is fully mixed; the organic solvent in the fully mixed organic semiconductor solution and poloxamer aqueous solution is volatilized by blowing with a nitrogen gas flow.

[0055] Specifically, the poloxamer 407 aqueous solution was placed in an ultrasonic cleaner, and the P3HT:O-IDTBR tetrahydrofuran solution was added dropwise into the poloxamer 407 aqueous solution and mixed thoroughly. The volume ratio of the P3HT:O-IDTBR tetrahydrofuran solution to the poloxamer 407 aqueous solution was 1:10, and the tetrahydrofuran was volatilized using a nitrogen flow.

[0056] It should be noted that both the emulsion method and the reprecipitation method can be used to prepare organic semiconductor nanoparticle inks, and the specific usage method and volume ratio are provided only for reference and are not specifically limited here.

[0057] S104, cooling the solution after the organic solvent evaporates.

[0058] In some embodiments, the solution after the organic solvent is evaporated is cooled to a preset temperature range, which may be -4°C to 4°C.

[0059] Specifically, the solution after tetrahydrofuran or chloroform is evaporated is cooled to -4°C to 4°C, which is a temperature range for converting poloxamer from a micellar state to a loose free state.

[0060] S105, performing centrifugal filtration on the solution after the cooling treatment to obtain organic semiconductor nanoparticle ink.

[0061] In the embodiment of the present application, a centrifugal filter 10 is used to centrifugally filter the cooled solution. Figure 6 , Figure 6 It is a schematic diagram of a process of centrifugal filtration of a solution after cooling treatment proposed in an embodiment of the present application.

[0062] The membrane molecular weight cut-off of the centrifugal filter 10 is 30 kDa (kilodaltons).

[0063] In some embodiments, the solution 20 after the cooling treatment is transferred to the centrifugal filter 10; the solution in the centrifugal filter 10 is centrifuged and the filtrate 30 is discarded; in the centrifugal filter 10, deionized water 40 is added to clean the solution 50 in the upper tube until the surface tension of the filtrate 30 reaches a preset range; the solution after the cleaning treatment is filtered; the solution after the filtration treatment is heated.

[0064] Specifically, the solution 20 after the cooling treatment is transferred to the centrifugal filter 10, centrifuged at 4000 rpm for 20 minutes, and the filtrate 30 is discarded. The centrifugal treatment achieves the purpose of removing the free poloxamer in the solution. The solution 50 after the centrifugal treatment of the centrifugal filter 10 is replenished to the maximum scale line of the upper tube with deionized water 40, and centrifuged at 4000 rpm for 20 minutes. The cleaning treatment achieves the purpose of removing the free poloxamer remaining in the solution. When the surface tension of the filtrate 30 reaches 38±2mN·m -1 The washed solution is filtered with a 0.45 μm filter membrane to remove impurities in the solution. The filtered solution is heated to prepare an organic semiconductor nanoparticle ink.

[0065] See also Figure 7 , Figure 7 The present application provides a schematic diagram of a process of stripping poloxamer from an organic semiconductor nanoparticle ink. An organic semiconductor solution is added to a poloxamer aqueous solution, and the poloxamer dissolved in water is in a micellar state. The organic semiconductor solution is dispersed in the poloxamer aqueous solution by an emulsion method or a reprecipitation method, so that the micellar poloxamer gathers around the organic semiconductor nanoparticles. After cooling to a preset temperature range, the CMC of the poloxamer increases, causing it to change from a micellar state to a free state, and fall off from the surface of the organic semiconductor nanoparticles, and the poloxamer is stripped from the organic semiconductor nanoparticles by centrifugal filtration.

[0066] The following describes the method in conjunction with specific embodiments.

[0067] The present application provides a method for preparing an organic semiconductor nanoparticle ink, and the preparation method specifically includes: steps S201 to S205.

[0068] S201. Dissolve organic photovoltaic materials P3HT and O-IDTBR in tetrahydrofuran by heating and stirring to prepare a P3HT:O-IDTBR tetrahydrofuran solution.

[0069] The mass ratio of P3HT to O-IDTBR was 1:1, the concentration of the P3HT:O-IDTBR tetrahydrofuran solution was 1 mg / mL, the heating temperature was 40°C, and the stirring time was 3 h.

[0070] S202, dissolving poloxamer 407 powder in deionized water by heating and stirring to prepare a poloxamer 407 aqueous solution.

[0071] The concentration of the poloxamer 407 aqueous solution was 20 mg / mL, and the heating temperature was 40°C.

[0072] S203, placing the poloxamer 407 aqueous solution in an ultrasonic cleaning machine, dripping the P3HT:O-IDTBR tetrahydrofuran solution into the poloxamer 407 aqueous solution drop by drop, mixing well, and volatilizing the tetrahydrofuran using a nitrogen flow.

[0073] The method of dispersing the P3HT:O-IDTBR tetrahydrofuran solution in the poloxamer 407 aqueous solution is a reprecipitation method, and the volume ratio of the P3HT:O-IDTBR tetrahydrofuran solution to the poloxamer 407 aqueous solution is 1:10.

[0074] S204, cooling the solution after the tetrahydrofuran is evaporated.

[0075] The cooling process is to lower the temperature to 0°C.

[0076] S205, transferring 20 of the solution cooled to 0°C to a centrifugal filter 10, discarding the filtrate 30 after centrifugation; using deionized water 40 to fill the centrifuged solution 50 to the maximum scale line of the upper tube, centrifuging until the surface tension of the filtrate 30 reaches a preset range, filtering the washed solution with a filter membrane, and heating the filtered solution to obtain P3HT:O-IDTBR nanoparticle ink.

[0077] The centrifugal filter 10 is a 15 mL centrifugal filter, the molecular weight cutoff of the filter membrane is 30 kDa, the centrifugal speed is 4000 rpm, the centrifugal time is 20 min, the deionized water 40 is used to make up the solution 50 after the centrifugal treatment to 15 mL, and the surface tension of the filtrate 30 reaches 38±2 mN·m -1 The pore size of the filtration membrane is 0.45 μm, and the temperature is raised to return to room temperature.

[0078] See also Figure 8 , Figure 8 The zeta potential of the P3HT:O-IDTBR nanoparticle ink prepared based on poloxamer before and after cleaning (Example), the zeta potential of the P3HT:O-IDTBR nanoparticle ink prepared based on sodium dodecyl sulfate (SDS) before and after cleaning, and the zeta potential of the P3HT:O-IDTBR nanoparticle ink prepared based on dodecyltrimethylammonium bromide (DTAB) before and after cleaning are shown.

[0079] By comparing the zeta potential of the P3HT:O-IDTBR nanoparticle ink prepared based on SDS and DTAB before and after cleaning, it is found that after 2-3 times of centrifugal filtration cleaning, the zeta potential in the embodiment of the present application is significantly reduced, and the final zeta potential value is significantly lower than that of the P3HT:O-IDTBR nanoparticle ink prepared based on SDS and DTAB. It can be seen that compared with SDS and DTAB, poloxamer can be cleaned more effectively.

[0080] See also Figure 9a and Figure 9b , Figure 9a This is the Fourier infrared spectrum of P3HT:O-IDTBR nanoparticle ink prepared based on SDS. Figure 9b yes Figure 9a A partial enlarged view of .

[0081] like Figure 9b As shown in the figure, after five times of filtration and centrifugation, the SDS-based P3HT:O-IDTBR nanoparticle ink was -1 The S=O stretching peak at still retains 13%.

[0082] See also Fig.10a and Fig.10b , Fig.10a is a Fourier infrared spectrum of P3HT:O-IDTBR nanoparticle ink prepared based on poloxamer (Example), Fig.10b yes Fig.10a A partial enlarged view of .

[0083] like Fig.10b As shown, after 5 times of filtration and centrifugation washing, the COC stretching peak of poloxamer in the P3HT:O-IDTBR nanoparticle ink prepared based on SDS basically disappeared.

[0084] Combination Figure 9a , 9b and Fig.10a , 10b It can be found that the poloxamer in the P3HT:O-IDTBR nanoparticle ink obtained in the examples of the present application can be effectively removed after filtration and centrifugation.

[0085] From the above results, it can be seen that the preparation method of the organic nanoparticle ink proposed in the embodiment of the present application can effectively remove the surfactant poloxamer, reduce the residual surfactant in the organic semiconductor nanoparticle ink, thereby reducing the electron traps on the organic semiconductor film, realizing the effective transfer of charges, and thus improving the performance of organic electronic devices.

[0086] In another embodiment, the present application provides an electronic device, which is prepared by processing using the organic semiconductor nanoparticle ink provided by any of the above embodiments.

[0087] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A method for preparing an organic semiconductor nanoparticle ink, characterized in that: The method comprises: dissolving an organic semiconductor material in an organic solvent to prepare an organic semiconductor solution; Dissolving poloxamer in deionized water to prepare a poloxamer aqueous solution; dispersing the organic semiconductor solution in the poloxamer aqueous solution and volatilizing the organic solvent; Cooling the solution after the organic solvent evaporates; The solution after the cooling treatment is subjected to centrifugal filtration treatment to obtain organic semiconductor nanoparticle ink.

2. The preparation method according to claim 1, characterized in that: The step of dissolving poloxamer in deionized water to prepare a poloxamer aqueous solution comprises: Add poloxamer powder to deionized water; The deionized water is heated and stirred to obtain the poloxamer aqueous solution, the concentration of the poloxamer aqueous solution is 10-20 mg / mL, and the heating temperature is 36-44°C.

3. The preparation method according to claim 1, characterized in that: The step of dispersing the organic semiconductor solution in the poloxamer aqueous solution comprises: The organic semiconductor solution is dispersed in the poloxamer aqueous solution by an emulsion method or a reprecipitation method.

4. The preparation method according to claim 3, characterized in that: The method of dispersing the organic semiconductor solution in the poloxamer aqueous solution by an emulsion method and volatilizing the organic solvent comprises: The organic semiconductor solution and the poloxamer aqueous solution are subjected to heating and stirring treatment, wherein the heating and stirring temperature is 36-44° C. and the stirring time is 1 hour; Under ice bath conditions, the mixed solution after heating and stirring is subjected to ultrasonic treatment, and the ultrasonic time is 5 minutes; the organic solvent in the mixed solution after ultrasonic treatment is volatilized, and the volatilization method is heating volatilization.

5. The preparation method according to claim 3, characterized in that: The method of dispersing the organic semiconductor solution in the poloxamer aqueous solution by a reprecipitation method and volatilizing the organic solvent comprises: The poloxamer aqueous solution is placed in an ultrasonic cleaning machine, and the organic semiconductor solution is dripped into the poloxamer aqueous solution drop by drop, and the mixture is fully mixed; The organic solvent in the fully mixed mixture of the organic semiconductor solution and the poloxamer aqueous solution is volatilized by blowing with a nitrogen flow.

6. The preparation method according to claim 1, characterized in that: The step of cooling the solution after the organic solvent is volatilized comprises: The solution after the organic solvent is volatilized is cooled to a preset temperature range, wherein the preset temperature range is -4°C to 4°C.

7. The preparation method according to claim 1, characterized in that: The method of subjecting the cooling solution to centrifugal filtration to obtain an organic semiconductor nanoparticle ink comprises: Transferring the cooled solution to a centrifugal filter; Centrifuging the solution in the centrifugal filter and discarding the filtrate; In the centrifugal filter, deionized water is added to wash the centrifuged solution until the surface tension of the filtrate reaches a preset range; Performing suction filtration on the solution after the cleaning treatment; The solution after the suction filtration treatment is subjected to a heating treatment to obtain an organic semiconductor nanoparticle ink.

8. The preparation method according to claim 1, characterized in that: The general chemical formula of the poloxamer is: HO(C2H4O) x (C3H5O) y (C2H4O) x H, wherein x is 2-130 and y is 15-67.

9. An organic semiconductor nanoparticle ink, characterized in that: The organic semiconductor nanoparticle ink is prepared by the method for preparing the organic semiconductor nanoparticle ink according to any one of claims 1 to 8.

10. An electronic device, characterized in that: The electronic device is prepared by processing the organic semiconductor nanoparticle ink according to claim 9.

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