Detection device and semiconductor device

Abstract

The invention relates to the field of semiconductor equipment detection. A detection device and semiconductor equipment disclosed by the invention comprise a shell, a temperature sampling piece, a capacitor assembly, a capacitor sampling circuit, a timer and a control unit. The temperature sampling piece is arranged on the shell and used for detecting the temperature of the to-be-detected cavity wall of the semiconductor equipment. The capacitor assembly comprises a positioning pole plate and a movable pole plate which are arranged at intervals along the vibration direction of the to-be-detected cavity wall, the positioning pole plate is positioned and connected to the shell, and the movable pole plate can move relative to the shell. The capacitor sampling circuit is electrically connected with the movable pole plate and the positioning pole plate and used for sampling capacitor current and capacitor voltage when the capacitor assembly works. The timer is used for timing. The control unit is connected with the capacitance sampling circuit and the timer and used for determining the vibration speed according to the capacitance current, the capacitance voltage and the timing result of the timer. The device can detect the vibration speed of the cavity wall of the semiconductor equipment and the temperature of the cavity wall, and can effectively monitor the vibration speed and the temperature of the cavity wall of the semiconductor equipment.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor equipment, and in particular to a detection device and a semiconductor equipment. Background Art

[0002] During the process of wafer processing by semiconductor equipment, especially when using plasma to etch the mask or remove the glue of the wafer, the cavity wall of the semiconductor equipment that holds the wafer will vibrate. The vibration causes the wafer to slide and displace, which will seriously affect the processing effect of the wafer and cause the wafer yield to decrease. At the same time, long-term operation of the equipment will cause the cavity wall of the semiconductor equipment to generate high temperature, which can easily cause burns to the processing operators near the semiconductor equipment. Therefore, it is very important to study a method that can detect the vibration speed and temperature of the cavity wall of the semiconductor equipment. However, at present, there is a lack of detection devices on the market that can detect both the vibration speed and the temperature of the cavity wall of the semiconductor equipment. Summary of the invention

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present disclosure is to provide a detection device and a semiconductor device, which can detect both the vibration speed and the temperature of the cavity wall of the semiconductor device, and can effectively monitor the vibration speed and temperature of the cavity wall of the semiconductor device.

[0004] The detection device provided by the present disclosure is used to detect the vibration speed and temperature of the cavity wall to be tested of the semiconductor device, including: a shell; a temperature sampling member, which is arranged in the shell and is used to detect the temperature of the cavity wall to be tested; a capacitor component, including: a positioning electrode and a movable electrode, which are arranged at intervals along the vibration direction of the cavity wall to be tested, and the positioning electrode is positioned and connected to the shell, and the movable electrode can move relative to the shell; a capacitor sampling circuit, which is electrically connected to the movable electrode and the positioning electrode respectively, and is used to sample the capacitor current and capacitor voltage when the capacitor component is working; a timer, which is used for timing; a control unit, which is connected to the capacitor sampling circuit and the timer respectively, and is used to determine the vibration speed according to the capacitor current, the capacitor voltage and the timing result of the timer.

[0005] According to some embodiments provided by the present disclosure, the temperature sampling component includes: a temperature-sensitive resistor; a resistance sampling circuit electrically connected to the temperature-sensitive resistor and used to sample the resistance current and resistance voltage of the temperature-sensitive resistor when it is working; the control unit is connected to the resistance sampling circuit and used to determine the temperature according to the resistance current and the resistance voltage; the calculation formula used by the control unit to calculate the temperature is:

[0006] ;

[0007] in, is the temperature, is the length of the thermistor, is the cross-sectional area of ​​the thermistor, is the initial resistivity of the temperature sensitive resistor, is a constant related to the material of the temperature sensitive resistor, is the resistor voltage, is the resistor current.

[0008] 3. The detection device according to claim 1, characterized in that the control unit uses a calculation formula for calculating the vibration speed as follows:

[0009] ;

[0010] in, is the vibration speed, is the relative area between the active plate and the positioning plate, For time, is the distance between the active plate and the positioning plate, is the dielectric constant, is the Coulomb constant, is the capacitor voltage, is the capacitor current.

[0011] According to some embodiments provided by the present disclosure, it also includes: an insulating elastic member, whose two ends are respectively fixedly connected to the positioning electrode and the movable electrode; and / or a first alarm, the control unit is respectively connected to the temperature sampling member and the first alarm, and is used to control the first alarm to alarm when the temperature exceeds a temperature threshold; and / or a second alarm, the control unit is connected to the second alarm, and is used to control the second alarm to alarm when the vibration speed exceeds a vibration threshold.

[0012] According to some embodiments provided by the present disclosure, the temperature sampling component includes: a thermistor, wherein the thermistor is directly installed below the shell and is installed flatly and closely to the wall of the cavity to be measured; or the thermistor is installed inside the shell to cover the lower opening of the shell, so that when the shell is installed flatly and closely to the wall of the cavity to be measured, it is arranged adjacent to the wall of the cavity to be measured.

[0013] According to some embodiments provided by the present disclosure, the inner peripheral wall of the shell forms an annular insulating portion disposed between the positioning electrode plate and the movable electrode plate, and the annular insulating portion also abuts against the positioning electrode plate.

[0014] According to some embodiments provided by the present disclosure, the shell includes a cylindrical portion and a cover portion, the cylindrical portion forms an installation cavity for installing the capacitor assembly, and forms a screw-on opening connected to the installation cavity, and a peripheral wall is provided with a screw-on thread; the peripheral wall of the cover portion is provided with an adapting thread adapted to the screw-on thread, and a threaded column is provided on the surface facing the screw-on opening, which is guided by the threaded locking of the cover portion and the cylindrical portion, and is threadedly locked to the positioning threaded hole of the positioning plate; or

[0015] The shell is provided with an installation cavity for installing the capacitor assembly and an installation threaded hole connected to the installation cavity; the detection device also includes: a threaded column, which is threadedly connected to the installation threaded hole and the positioning threaded hole of the positioning electrode, and the thread rotation directions of the installation threaded hole and the positioning threaded hole are opposite, and the threaded column is provided with a bidirectional thread that is compatible with the thread of the installation threaded hole and the thread of the positioning threaded hole; or the threaded column is threadedly connected to the installation threaded hole and is squeezed and sleeved in an annular elastic member in the positioning electrode.

[0016] According to some embodiments provided by the present disclosure, the housing is insulated, the threaded column is conductive, and is electrically connected to a cable of the capacitance sampling circuit.

[0017] According to some embodiments provided by the present disclosure, the present invention further includes: a barrier member disposed between the movable electrode plate and the temperature sampling member.

[0018] The semiconductor device disclosed in the present invention comprises: a device body, which forms a receiving cavity for receiving wafers and has a cavity wall to be tested; and the detection device as described above, which is positioned and connected to the outer surface of the cavity wall to be tested.

[0019] Beneficial effects:

[0020] (1) The detection device and semiconductor device disclosed in the present invention can detect both the vibration speed and the temperature of the cavity wall of the semiconductor device, and can effectively monitor the vibration speed and temperature of the cavity wall of the semiconductor device.

[0021] (2) The detection device and semiconductor equipment disclosed herein are firmly mounted between the positioning plate and the housing and are difficult to loosen under vibration conditions.

[0022] (3) In the detection device and semiconductor device disclosed herein, the positioning plate and the movable plate are unlikely to touch each other and cause a short circuit, and the detection device has high working reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of a detection device according to an embodiment of the present disclosure.

[0024] Figure 2 Schematic diagram of a circuit of a temperature sampling device according to an embodiment of the present disclosure.

[0025] Figure 3 It is a schematic diagram of a detection device according to another embodiment of the present disclosure.

[0026] Figure 4 is a schematic diagram of a detection device according to another embodiment of the present disclosure.

[0027] Figure 5 yes Figure 3 Enlarged schematic diagram of part A.

[0028] Figure 6 is a circuit diagram of a capacitor sampling circuit according to an embodiment of the present disclosure.

[0029] Figure 7 It is a schematic diagram of the arrangement of some components of the detection device according to an embodiment of the present disclosure.

[0030] Figure 8 is a schematic diagram of a semiconductor device according to an embodiment of the present disclosure.

[0031] Reference numerals:

[0032] Detection device 100;

[0033] Shell 11; installation cavity 1101; lower opening 1102; screw-on opening 1103; installation threaded hole 1104; cylinder portion 111; cover portion 112; threaded column 113; annular insulating portion 114; threaded fastener 115;

[0034] Temperature sampling device 12; temperature sensitive resistor 121; resistance sampling circuit 122; first power supply 1221; first current sampling element 1222; first voltage sampling element 1223;

[0035] Capacitor assembly 13; positioning plate 131; positioning threaded hole 13101; guide hole 13102; annular elastic member 1311; movable plate 132;

[0036] Capacitor sampling circuit 14; second power supply 141; second current sampling element 142; second voltage sampling element 143;

[0037] Timer 15;

[0038] Control unit 16;

[0039] Insulation cover 17; threading hole 1701;

[0040] Insulating elastic member 18;

[0041] Baffle 19;

[0042] First alarm 21;

[0043] Second alarm 22;

[0044] Display screen 23;

[0045] Semiconductor device 900; device body 91; accommodating cavity 9101; cavity wall to be tested 902. DETAILED DESCRIPTION

[0046] The following is an explanation of the embodiments of the present disclosure by specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed by the present disclosure. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in the present disclosure can also be modified or changed in various ways according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0047] The following is a detailed description of the embodiments of the present disclosure with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0048] In the representations of the present disclosure, the reference terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" and the like mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials or characteristics represented may be combined in any one or a group of embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples represented in the present disclosure and the features of different embodiments or examples, unless they are mutually contradictory.

[0049] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of the present disclosure, "a group" means two or more, unless otherwise clearly and specifically defined.

[0050] In order to clearly describe the present disclosure, components not related to the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification.

[0051] Throughout the specification, when a device is said to be "connected" to another device, this includes not only the case of "direct connection" but also the case of "indirect connection" by placing other elements therebetween. In addition, when a device is said to "include" a certain component, unless otherwise stated, it does not exclude other components, but means that other components may be included.

[0052] Although the terms first, second, etc. are used to represent various elements in this article in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first interface and the second interface, etc. are represented. Moreover, as used in this article, the singular forms "one", "one" and "the" are intended to also include plural forms, unless there is an opposite indication in the context. It should be further understood that the terms "comprising" and "including" indicate that there are the described features, steps, operations, elements, modules, projects, kinds, and / or groups, but do not exclude the existence, occurrence or addition of one or a group of other features, steps, operations, elements, modules, projects, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way, will there be an exception to this definition.

[0053] The technical terms used herein are only used to refer to specific embodiments and are not intended to limit the present disclosure. The singular form used herein also includes the plural form unless the sentence clearly indicates the contrary meaning. The meaning of "including" used in the specification is to specify specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0054] Although not defined differently, all terms, including technical and scientific terms used herein, have the same meaning as those generally understood by those skilled in the art to which the present disclosure belongs. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with relevant technical literature and the message of the present disclosure, and shall not be overly interpreted as ideal or very formal meanings unless defined.

[0055] When the relevant semiconductor equipment processes the wafer, some components in the semiconductor equipment that work under vibration and high temperature, such as the RF source in the semiconductor equipment emitting plasma to etch the mask or remove the glue on the wafer, the cooling fan of the RF source matcher working under vibration and high temperature will cause the cavity wall of the accommodating cavity that accommodates the wafer to vibrate, such as up and down vibration, causing the wafer to slide and displace, seriously affecting the processing effect of the wafer, causing the wafer yield to decrease. At the same time, long-term operation of the equipment will also cause the cavity wall of the accommodating cavity to generate high temperature, and high temperature can easily cause burns to the processing operators. However, the related technology lacks a detection device that can detect both the vibration speed of the cavity wall of the semiconductor equipment and the cavity wall temperature.

[0056] In view of this, the present disclosure provides a detection device, which can detect both the vibration speed of the cavity wall to be tested of the semiconductor device, such as the cavity wall of the above-mentioned accommodating chamber, and the temperature of the cavity wall to be tested.

[0057] Figure 1 FIG. 1 is a schematic diagram of a detection device 100 according to an embodiment of the present disclosure. Figure 1 The detection device 100 disclosed in the present invention includes a housing 11 , a temperature sampling component 12 , a capacitor assembly 13 , a capacitor sampling circuit 14 , a timer 15 and a control unit 16 .

[0058] The temperature sampling component 12 is disposed on the housing 11 and is used to detect the temperature of the cavity wall to be measured.

[0059] Figure 2 FIG. 1 is a circuit diagram of the temperature sampling device 12 of the embodiment of the present disclosure. Figure 1 and Figure 2 The temperature sampling component 12 includes a thermistor 121. The thermistor 121 is directly mounted below the housing 11 and is used to be mounted flatly on the outer surface of the cavity wall to be measured. For example, the thermistor 121 may be encapsulated in a packaging shell, and the packaging shell of the thermistor 121 is fixedly connected to the housing 11 such as by welding, and the packaging shell of the thermistor 121 is fixed to the cavity wall to be measured by a threaded fastener 115 such as a bolt.

[0060] Figure 3 FIG. 1 is a schematic diagram of a detection device 100 according to another embodiment of the present disclosure. Figure 3In another example, the temperature resistor 121 may also be installed inside the shell 11 to cover the lower opening 1102 of the shell 11, so as to be arranged adjacent to the cavity wall to be measured when the shell 11 is flatly installed on the outer surface of the cavity wall to be measured. By way of example, the thermistor 121 may be encapsulated in a packaging shell, and the packaging shell of the thermistor 121 is directly fixed at the lower opening 1102 of the shell 11, and the shell 11 is fixed to the cavity wall to be measured by a threaded fastener 115. Therefore, since the thermistor 121 is arranged adjacent to the cavity wall to be measured, the temperature of the cavity wall to be measured sensed by the thermistor 121 is accurate, which is conducive to the temperature sampling component 12 to obtain more accurate temperature data.

[0061] Optionally, see Figure 2 The temperature sampling device 12 further includes a resistance sampling circuit 122. The resistance sampling circuit 122 is connected to the temperature sensitive resistor 121 and is used to sample the resistance current of the temperature sensitive resistor 121 when it is working. and the resistor voltage .

[0062] Optionally, the resistance sampling circuit 122 includes a first power supply 1221, a first current sampling element 1222 and a first voltage sampling element 1223. The first power supply 1221 is used to supply power to the temperature-sensitive resistor 121. The first current sampling element 1222 is connected in series to the powered temperature-sensitive resistor 121 to detect the resistance current. The first voltage sampling element 1223 is connected in parallel to the powered temperature sensitive resistor 121 to detect the resistor voltage .

[0063] The control unit 16 is connected to the resistance sampling circuit 122 and is used to and the resistor voltage Determine the temperature of the cavity wall to be measured. The control unit 16 uses the following calculation formula to calculate the temperature:

[0064] ;

[0065] in, is the temperature, is the length of the temperature-sensitive resistor 121, is the cross-sectional area of ​​the temperature-sensitive resistor 121, is the initial resistivity of the temperature-sensitive resistor 121, is a constant related to the material of the thermistor 121 .

[0066] Specifically, the temperature calculation formula is determined as follows:

[0067] Formula a1: ; Formula a2: ;

[0068] in, is the resistance value of the temperature-sensitive resistor 121, is the resistivity of the temperature-sensitive resistor 121. According to the formula a1 and the formula a2, the following formula a3 can be derived:

[0069] ;

[0070] And since the formula a4 according to Ohm's law is as follows:

[0071] ;

[0072] Therefore, according to formula a3 and formula a4, the following formula a5 can be derived:

[0073] ;

[0074] Therefore, the calculation formula for the above temperature can be derived according to the above formula a5.

[0075] See also Figure 1 The capacitor assembly 13 includes a positioning plate 131 and a movable plate 132. The positioning plate 131 and the movable plate 132 are arranged at intervals along the vibration direction of the cavity wall to be measured. The positioning plate 131 is positioned and connected to the housing 11, and the movable plate 132 can move relative to the housing 11.

[0076] Optionally, when the vibration direction of the cavity wall to be tested is the up-and-down direction, the positioning electrode plate 131 and the movable electrode plate 132 are spaced apart in the up-and-down direction, wherein the positioning electrode plate 131 is positioned and connected to the shell 11, and the movable electrode plate 132 is movably arranged in the shell 11 up and down.

[0077] Optionally, the outer diameter of the active pole plate 132 is configured to be smaller than the inner diameter of the mounting cavity 1101 in the housing 11 , so that the active pole plate 132 can slide relatively in the mounting cavity 1101 and thus move relative to the housing 11 .

[0078] For some examples, see Figure 1The shell 11 includes a barrel portion 111 and a cover portion 112. A screw-on opening 1103 communicating with the installation cavity 1101 is formed at the top of the barrel portion 111, and a screw-on thread is provided on the peripheral wall. An adapting thread matching the screw-on thread is provided on the peripheral wall of the cover portion 112, and a threaded column 113 is provided on the surface facing the screw-on opening 1103. The threaded column 113 is connected to the cover portion 112 as a whole and can move synchronously with the cover portion 112. The threaded column 113 is guided by the threaded locking of the cover portion 112 and the barrel portion 111, and is locked to the positioning threaded hole 13101 on the positioning plate 131.

[0079] Therefore, when the positioning electrode plate 131 is positioned and installed in the housing 11, the positioning electrode plate 131 is first placed in the installation cavity 1101. Then the cover body 112 is rotated, so that the cover body 112 is screwed on the cylinder body 111, driving the threaded column 113 to be screwed on the positioning threaded hole 13101 on the positioning electrode plate 131, thereby realizing the positioning installation of the positioning electrode plate 131, and the installation is convenient.

[0080] Figure 4 FIG. 1 is a schematic diagram of a detection device 100 according to another embodiment of the present disclosure. Figure 4 In another embodiment, the housing 11 is provided with a mounting threaded hole 1104 communicating with the mounting cavity 1101 . The threaded column 113 is threadedly connected to the mounting threaded hole 1104 and the positioning threaded hole 13101 on the positioning plate 131 .

[0081] Therefore, when the positioning electrode 131 is installed in the shell 11, the positioning electrode 131 is first placed in the installation cavity 1101, and then the threaded column 113 is rotated to make the threaded column 113 successively screw into the installation threaded hole 1104 and the positioning threaded hole 13101 to achieve the positioning connection between the positioning electrode 131 and the shell 11.

[0082] Optionally, the threads on the mounting threaded hole 1104 and the positioning threaded hole 13101 have opposite rotation directions, and the threaded column 113 is provided with a bidirectional thread that matches the threads of the mounting threaded hole 1104 and the threads of the positioning threaded hole 13101. Specifically, the threaded column 113 has a large diameter portion and a small diameter portion with a diameter smaller than the large diameter portion, and the large diameter portion and the small diameter portion are provided with threads with opposite rotation directions, and the two threads with opposite rotation directions are the bidirectional thread.

[0083] Therefore, when the positioning plate 131 is installed in the housing 11, the positioning plate 131 is first placed in the installation cavity 1101, and then the threaded column 113 is rotated to make the threaded column 113 rotate and install in the installation threaded hole 1104, and then the positioning plate 131 is rotated and installed in the threaded column 113 through the positioning threaded hole 13101. Thus, the positioning plate 131 and the housing 11 are positioned and connected. And because the rotation directions of the positioning threaded hole 13101 and the mounting threaded hole 1104 are opposite, when the threaded column 113 has a tendency to rotate upward and thus loosen from the shell 11 under vibration conditions, the threaded column 113 with the loosening tendency is in a tightening tendency at the positioning pole plate 131, and the tightening force formed by the tightening tendency is difficult to drive the positioning pole plate 131 to rotate, so that the threaded column 113 will be tightened to the positioning pole plate 131 more, so that under vibration conditions, the threaded column 113 between the positioning pole plate 131 and the shell 11 is difficult to loosen and fall off, so that the positioning pole plate 131 and the shell 11 of the detection device 100 can be stably positioned and connected under vibration conditions, which is beneficial to improving the working reliability of the detection device 100.

[0084] Optionally, see Figure 1 The positioning plate 131 is provided with a guide hole 13102, which is connected to the positioning threaded hole 13101 and has an outer diameter larger than the positioning threaded hole 13101. Therefore, before the threaded column 113 is threadedly engaged with the positioning threaded hole 13101, the guide hole 13102 can guide and limit the threaded column 113, which is conducive to ensuring that the threaded column 113 and the positioning threaded hole 13101 can be threadedly engaged smoothly.

[0085] Figure 5 yes Figure 3 In other examples, see Figure 3 and Figure 5 The housing 11 is provided with a mounting threaded hole 1104 communicating with the mounting cavity 1101 . The threaded column 113 is threadedly connected to the mounting threaded hole 1104 , and is positioned and sleeved in an annular elastic member 1311 inside the positioning plate 131 .

[0086] Optionally, the annular elastic member 1311 includes an annular spring contact finger, and the annular spring contact finger is fixedly connected inside the positioning electrode plate 131. Specifically, the spring contact finger can be made of metal material and has conductivity.

[0087] Therefore, when the positioning pole plate 131 is installed in the housing 11, the positioning pole plate 131 is first placed in the installation cavity 1101. Then the threaded column 113 is rotated to be installed in the installation threaded hole 1104, and then the threaded column 113 is rotated continuously, so that the threaded column 113 is squeezed into the annular elastic member 1311, and the annular elastic member 1311 is deformed and pressed against the outer peripheral wall of the threaded column 113. A great friction force can be formed between the annular elastic member 1311 and the threaded column 113, so that the force required to screw the threaded column 113 out of the annular elastic member 1311 is very great, so that under vibration conditions, when the threaded column 113 has a tendency to loosen from the housing 11, the threaded column 113 is difficult to be screwed out of the positioning pole plate 131.

[0088] Optionally, when the threaded column 113 is threadedly connected to the housing 11 , a cross groove is provided on the top of the threaded column 113 , so that the threaded column 113 can be conveniently tightened and installed on the housing 11 using a tightening tool such as a screwdriver.

[0089] Optionally, see Figure 1 The inner peripheral wall of the shell 11 forms an annular insulating portion 114 which is separated from the positioning electrode plate 131 and the movable electrode plate 132 , and the annular insulating portion 114 also abuts against the positioning electrode plate 131 .

[0090] Optionally, the annular insulating portion 114 may be integrally formed with the housing 11 , or may be detachably connected to the housing 11 .

[0091] Therefore, during the vibration of the cavity wall to be tested, when the vibration speed is too high, the active electrode plate 132 may quickly approach and touch the positioning electrode plate 131, and the positioning electrode plate 131 may also vibrate and fall off the housing 11, thereby approaching and touching the active electrode plate 132, thereby causing a short circuit between the positioning electrode plate 131 and the active electrode plate 132, resulting in short circuit damage to the capacitor assembly 13 and / or the capacitor sampling circuit 14. The annular insulating portion 114 is arranged between the positioning electrode plate 131 and the active electrode plate 132, which can avoid the contact and short circuit between the active electrode plate 132 and the positioning electrode plate 131 when the vibration is too large, and protects the capacitor assembly 13 and the capacitor sampling circuit 14, thereby improving the working reliability of the detection device 100.

[0092] Optionally, when the positioning electrode plate 131 and the movable electrode plate 132 are arranged with a spacing in the up-down direction, the annular insulating portion 114 is arranged below the positioning electrode plate 131 to support the positioning electrode plate 131 .

[0093] See also Figure 1 The capacitance sampling circuit 14 is electrically connected to the active electrode 132 and the positioning electrode 131, and is used to sample the capacitance current of the capacitor component 13 when it is working. and capacitor voltage .

[0094] Optionally, the shell 11 is insulated, the threaded column 113 is conductive, and a cable at one end of the capacitance sampling circuit 14 is electrically connected to the threaded column 113, thereby achieving electrical connection with the positioning electrode 131. The electrical connection between the capacitance sampling circuit 14 and the positioning electrode 131 is convenient to operate, and the cable at the other end passes through the shell 11 and is electrically connected to the active electrode 132.

[0095] Figure 6 is a circuit diagram of the capacitance sampling circuit 14 of the embodiment of the present disclosure. Figure 1 and Figure 6 The capacitance sampling circuit 14 includes a second power supply 141, a second current sampling element 142 and a second voltage sampling element 143. The second power supply 141 is used to supply power to the capacitance component 13. The second current sampling element 142 is connected in series to the capacitance component 13 to detect the capacitance current. The second voltage sampling element 143 is connected in parallel to the capacitor component 13 to detect the capacitor voltage. .

[0096] The timer 15 is used for timing. The control unit 16 is connected to the capacitance sampling circuit 14 and the timer 15, and is used for , the capacitor voltage The vibration speed is determined by the timing result of the timer 15. The control unit 16 is used to calculate the vibration speed using the following formula:

[0097] ;

[0098] in, is the vibration speed, is the relative area between the active electrode plate 132 and the positioning electrode plate 131, For time, is the distance between the active electrode plate 132 and the positioning electrode plate 131, is the dielectric constant, is the Coulomb constant.

[0099] Specifically, the calculation formula of the vibration speed is determined as follows:

[0100] Formula b1: ; Formula b2: ;

[0101] in, is the capacitance of the capacitor component 13, and the following formula b3 is derived according to formula b1 and formula b2:

[0102] ;

[0103] Therefore, the calculation formula for the vibration speed can be derived according to the above formula b3.

[0104] Therefore, the detection device 100 disclosed in the present invention can detect both the vibration speed and the temperature of the cavity wall to be tested, and can effectively monitor the vibration speed and temperature of the cavity wall to be tested, which is beneficial to ensure that the wafer is difficult to move during the processing and avoid burns to the operator.

[0105] Optionally, the detection device 100 further includes an insulating cover 17. The insulating cover 17 is provided at the mounting threaded hole 1104 of the housing 11 and is provided with a threading hole 1701 for the cable to pass through. Thus, the insulating cover 17 can isolate the conductive threaded column 113 from the outside world, thereby improving safety.

[0106] Optionally, see Figure 1 , the detection device 100 also includes an insulating elastic member 18. The two ends of the insulating elastic member 18 are fixedly connected to the positioning electrode plate 131 and the movable electrode plate 132 respectively. By way of example, the insulating elastic member 18 can be a plastic spring. One end of the insulating spring is fixedly connected to the positioning electrode plate 131, and the other end is fixedly connected to the movable electrode plate 132. Therefore, after the vibration of the cavity wall to be tested disappears, under the elastic force of the insulating elastic member 18, the cavity wall to be tested will be reset to its original position, and at this time, the elastic force provided by the insulating elastic member 18 and the gravity of the movable electrode plate 132 are balanced with each other, and the insulating elastic member 18 plays a certain anchoring role on the movable electrode plate 132, which is conducive to ensuring that when the cavity wall to be tested is not vibrating, the movable electrode plate 132 can be maintained at a predetermined position at a predetermined interval from the positioning electrode plate 131, so as to ensure that the vibration speed detected when there is no vibration is zero. In addition, the insulating elastic member 18 can also prevent the active electrode plate 132 from colliding with the positioning electrode plate 131 , which is helpful to reduce the probability of short circuit caused by the collision between the active electrode plate 132 and the positioning electrode plate 131 .

[0107] Optionally, when the elastic force of the insulating elastic member 18 and the gravity of the active plate 132 are balanced, the active plate 132 is located in a floating position and the active plate 132 is suspended. Thus, when the cavity wall to be tested vibrates up and down, the active plate 132 can move upward / downward relative to the housing 11.

[0108] Optionally, see Figure 1 The detection device 100 further includes a barrier 19. The barrier 19 is disposed between the active plate 132 and the temperature sampling component 12, and is disposed below the floating position. Thus, the barrier 19 can prevent the active plate 132 from directly colliding with the temperature sampling component 12, and can prevent the temperature sampling component 12 from being damaged by the active plate 132 when the vibration speed of the chamber wall to be tested increases rapidly.

[0109] Optionally, the barrier member 19 is detachably disposed in the housing 11. For example, the barrier member 19 is a barrier ring or a barrier plate detachably disposed in the housing 11, so that when the barrier member 19 is damaged, it is convenient to replace and repair it.

[0110] Optionally, the detection device 100 further includes a display screen 21. The display screen 21 is connected to the control unit 16 and is used to display the temperature detection results and the vibration speed detection results, so that the operator can intuitively observe the vibration speed and temperature detection results of the cavity wall to be detected.

[0111] Figure 7 FIG. 1 is a schematic diagram of the arrangement of some components of the detection device 100 according to an embodiment of the present disclosure. Figure 1 and Figure 7 , the detection device 100 also includes a first alarm 22. The control unit 16 is respectively connected to the resistance sampling circuit 122 of the temperature sampling component 12 and the first alarm 22, and is used to control the first alarm 22 to alarm when the calculated temperature exceeds the temperature threshold. Therefore, when it is detected that the temperature of the cavity wall to be tested exceeds the temperature threshold, the first alarm 22 alarms to prompt the operator, so that the operator can operate the semiconductor device 900 to stop, and then perform maintenance and adjustment on the semiconductor device 900, so that the operator close to the semiconductor device 900 will not be burned. At the same time, when the first alarm 22 does not alarm, it is assumed that the operating state of the cavity wall to be tested of the semiconductor device 900 is in a normal state, so that the semiconductor can continue to maintain a normal working state.

[0112] Optionally, the detection device 100 also includes a second alarm 23. The control unit 16 is connected to the second alarm 23, and is used to control the second alarm 23 to alarm when the calculated vibration speed exceeds the vibration threshold. Therefore, when it is detected that the vibration speed of the chamber wall to be tested exceeds the vibration threshold, the second alarm 23 alarms to prompt the operator, so that the operator can operate the semiconductor device 900 to stop, and then perform maintenance and adjustment on the semiconductor device 900, so that the wafer inside the semiconductor device 900 is difficult to slide and shift during subsequent processing. At the same time, when the first alarm 22 does not alarm, it is assumed that the operating state of the chamber wall to be tested of the semiconductor device 900 is in a normal state, so that the semiconductor can continue to maintain a normal working state.

[0113] Figure 8 FIG. 9 is a schematic diagram of a semiconductor device 900 according to an embodiment of the present disclosure. Figure 8 The present disclosure also provides a semiconductor device 900 including a device body 91 and the detection device 100. The device body 91 has a receiving cavity 9101 for receiving wafers formed inside. The bottom of the detection device 100 is positioned and connected to the outer surface of the cavity wall 9102 to be tested of the receiving cavity 9101.

[0114] Optionally, when the vibration direction is mainly in the up-down direction, the chamber wall 9102 to be tested may be the top wall of the semiconductor device 900, and the detection device 100 may be disposed on the top wall of the semiconductor device 900. When the vibration direction is mainly in the horizontal direction, the chamber wall 9102 to be tested may be the peripheral side wall of the semiconductor device 900, and the detection device 100 may be disposed on the peripheral side wall of the semiconductor device 900, such as the left side wall, the right side wall, the front side wall or the rear side wall.

[0115] Therefore, since the semiconductor device 900 disclosed in the present invention is equipped with the detection device 100, the temperature state and vibration state of the semiconductor device 900 during operation can be effectively monitored, which is beneficial to avoid burns to operators and avoid vibration and displacement of wafers during processing, thereby ensuring operational safety and smooth wafer processing.

[0116] The above embodiments are merely illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present disclosure shall still be covered by the protection scope of the present disclosure.

Claims

1. A detection device, characterized in that: Used to detect the vibration velocity and temperature of the cavity wall of semiconductor equipment to be tested, including: case; A temperature sampling component, arranged in the housing, for detecting the temperature of the cavity wall to be measured; The capacitor assembly comprises: a positioning plate and a movable plate, which are arranged at intervals along the vibration direction of the cavity wall to be measured, and the positioning plate is positioned and connected to the shell, and the movable plate can move relative to the shell; A capacitance sampling circuit, electrically connected to the movable electrode plate and the positioning electrode plate, respectively, for sampling the capacitance current and capacitance voltage of the capacitance component when it is working; Timer, used for timing; A control unit is connected to the capacitor sampling circuit and the timer, respectively, and is used to determine the vibration speed according to the capacitor current, the capacitor voltage and the timing result of the timer.

2. The detection device according to claim 1, characterized in that: The temperature sampling component comprises: Thermistor; The resistance sampling circuit is electrically connected to the temperature-sensitive resistor and is used to sample the resistance current and resistance voltage of the temperature-sensitive resistor when it is working; the control unit is connected to the resistance sampling circuit and is used to determine the temperature according to the resistance current and the resistance voltage; the calculation formula used by the control unit to calculate the temperature is: ； in, is the temperature, is the length of the thermistor, is the cross-sectional area of ​​the thermistor, is the initial resistivity of the temperature sensitive resistor, is a constant related to the material of the temperature sensitive resistor, is the resistor voltage, is the resistor current.

3. The detection device according to claim 1, characterized in that: The control unit uses the following calculation formula to calculate the vibration speed: ； in, is the vibration speed, is the relative area between the active plate and the positioning plate, For time, is the distance between the active plate and the positioning plate, is the dielectric constant, is the Coulomb constant, is the capacitor voltage, is the capacitor current.

4. The detection device according to claim 1, characterized in that: Also includes: An insulating elastic member, two ends of which are respectively fixedly connected to the positioning electrode plate and the movable electrode plate; and / or A first alarm, wherein the control unit is connected to the temperature sampling element and the first alarm respectively, and is used to control the first alarm to alarm when the temperature exceeds a temperature threshold; and / or A second alarm, wherein the control unit is connected to the second alarm and is used for controlling the second alarm to sound an alarm when the vibration speed exceeds a vibration threshold.

5. The detection device according to claim 1, characterized in that: The temperature sampling component includes: a temperature-sensitive resistor, wherein the temperature-sensitive resistor is directly installed below the shell and is installed flatly and closely to the cavity wall to be measured; or the temperature-sensitive resistor is installed inside the shell to cover the lower opening of the shell, so that when the shell is installed flatly and closely to the cavity wall to be measured, it is arranged adjacent to the cavity wall to be measured.

6. The detection device according to claim 1, characterized in that: The inner peripheral wall of the shell forms an annular insulating portion which is arranged between the positioning electrode plate and the movable electrode plate, and the annular insulating portion also abuts against the positioning electrode plate.

7. The detection device according to claim 1, characterized in that: The shell comprises a cylindrical body and a cover body, the cylindrical body forms an installation cavity for installing the capacitor assembly, and forms a screw-on opening communicating with the installation cavity, and a screw-on thread is provided on the peripheral wall; the peripheral wall of the cover body is provided with an adapting thread adapted to the screw-on thread, and a threaded column is provided on the surface facing the screw-on opening, which is guided by the thread locking of the cover body and the cylindrical body, and is screw-locked to the positioning thread hole of the positioning plate; or The shell is provided with an installation cavity for installing the capacitor assembly and an installation threaded hole connected to the installation cavity; the detection device also includes: a threaded column, which is threadedly connected to the installation threaded hole and the positioning threaded hole of the positioning electrode, and the thread rotation directions of the installation threaded hole and the positioning threaded hole are opposite, and the threaded column is provided with a bidirectional thread that is compatible with the thread of the installation threaded hole and the thread of the positioning threaded hole; or the threaded column is threadedly connected to the installation threaded hole and is squeezed and sleeved in an annular elastic member in the positioning electrode.

8. The detection device according to claim 7, characterized in that: The housing is insulated, the threaded column is conductive, and is electrically connected to a cable of the capacitance sampling circuit.

9. The detection device according to claim 1, characterized in that: Also includes: The barrier member is arranged between the movable electrode plate and the temperature sampling member.

10. A semiconductor device, characterized in that include: The device body forms a receiving cavity for receiving the wafer and having a cavity wall to be tested; The detection device according to any one of claims 1 to 9 is positioned and connected to the outer surface of the cavity wall to be detected.

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