A debugging control system and method for an electrically cooled high-purity germanium detector

Abstract

The present application provides a debugging control system and method for an electrically cooled high-purity germanium detector. The method determines the escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector through an initial bias value and various energy resolutions, and determines a bias voltage critical value for complete separation of the electron-hole pairs based on the escape capability. A first boost gradient for bias voltage increase is determined based on the bias critical value and various leakage currents. The detection responsivity of the high-voltage electric field at each bias voltage is determined, and the noise perturbation amount of the high-voltage electric field is determined from all the detection responsivities. High-voltage compensation is performed on the first boost gradient based on the noise perturbation amount to obtain a second boost gradient for bias voltage increase when complete separation of electron-hole pairs occurs in the electrically cooled high-purity germanium detector. The second boost gradient is used as the bias debugging result of the electrically cooled high-purity germanium detector. Based on the above scheme, multi-gradient bias debugging of bias voltage increase in the electrically cooled high-purity germanium detector can be achieved, thereby improving the nuclear radiation detection sensitivity of the electrically cooled high-purity germanium detector.

Description

Technical Field

[0001] The present application relates to the technical field of nuclear radiation sensors, and more specifically, to a debugging control system and method for an electrically cooled high-purity germanium detector. Background Art

[0002] The electrically cooled high-purity germanium detector is a highly sensitive nuclear radiation sensor widely used in nuclear medicine, radioactive waste management, and environmental monitoring. The core principle of the electrically cooled high-purity germanium detector is to utilize the excellent response characteristics of high-purity germanium materials to radiation particles, combined with electric refrigeration technology to reduce the operating temperature of the electrically cooled high-purity germanium detector, thereby improving the energy resolution and detection response of the electrically cooled high-purity germanium detector. Due to the low background noise and high detection efficiency of high-purity germanium electrically cooled high-purity germanium detector, it has become an important tool for studying and monitoring nuclear radiation, and can accurately measure and analyze the energy and intensity of various radioactive nuclides.

[0003] The sensitivity of electrically cooled high-purity germanium detectors is affected by many factors, the most critical of which are the electric field distribution and bias conditions inside the detector. In traditional bias adjustment, the electric field is uneven, resulting in low electron and hole collection efficiency, which in turn affects the detector's response to weak signals. In addition, traditional bias adjustment methods fail to fully consider the spatial electric field gradient of the detector and ignore the differences in the response of different regions to radiation signals, further reducing the overall sensitivity of the detector. This is usually manifested as insufficient response to low-energy radiation, resulting in the detector's inability to effectively identify and quantify signals from low-energy radiation sources. Therefore, how to achieve multi-gradient bias debugging of the bias increase in electrically cooled high-purity germanium detectors, thereby improving the nuclear radiation detection sensitivity of electrically cooled high-purity germanium detectors, is a difficult problem faced by the industry. Summary of the Invention

[0004] The present application provides a debugging control system and method for an electrically cooled high-purity germanium detector, which can realize multi-gradient bias debugging of the bias voltage increase in the electrically cooled high-purity germanium detector, thereby improving the nuclear radiation detection sensitivity of the electrically cooled high-purity germanium detector.

[0005] In a first aspect, the present application provides a bias voltage debugging method for nuclear radiation detection, the method comprising:

[0006] Start bias voltage debugging of the electrically cooled high-purity germanium detector during nuclear radiation detection, set the initial bias voltage value of the electrically cooled high-purity germanium detector, gradually increase the bias voltage of the electrically cooled high-purity germanium detector from the initial bias voltage value, and simultaneously monitor the radiation characteristic parameters in real time after each bias voltage gradient increase;

[0007] Determining the escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector based on the initial bias voltage value and the energy resolution in each radiation characteristic parameter, and then determining the bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector;

[0008] Determining a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias voltage critical value and the leakage current in each radiation characteristic parameter;

[0009] The detection responsivity of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias voltage is determined based on the output signals of each radiation characteristic parameter, and the noise disturbance amount of the high-voltage electric field during nuclear radiation detection is determined based on all the detection responsivities.

[0010] Based on the noise disturbance amount, high-voltage compensation is performed on the first boost gradient to obtain a second boost gradient for increasing the bias voltage when complete separation of electron-hole pairs occurs in the electrically cooled high-purity germanium detector. The second boost gradient is used as the bias voltage debugging result of the electrically cooled high-purity germanium detector.

[0011] In some embodiments, determining the escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector by using the initial bias voltage value and the energy resolution in each radiation characteristic parameter specifically includes:

[0012] Determine the escape motion loss of electron-hole pairs in an electrically cooled high-purity germanium detector based on the energy resolution of each radiation characteristic parameter;

[0013] Determining the initial electric field strength of the electrically cooled high-purity germanium detector by using the initial bias voltage value;

[0014] The escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector is determined according to the escape motion loss and the electric field strength.

[0015] In some embodiments, determining the bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector specifically includes:

[0016] Determining the escape electric field strength during nuclear radiation detection using the escape capability;

[0017] The effective drift amount of the carrier drift effect inside the germanium material before the electron-hole pairs are completely separated is determined based on the separation electric field strength of the electrically cooled high-purity germanium detector.

[0018] The bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection is determined according to the escape electric field strength and the effective drift amount.

[0019] In some embodiments, determining a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias voltage threshold and the leakage current in each radiation characteristic parameter specifically includes:

[0020] Determining the gradient information of the leakage current during nuclear radiation detection according to the leakage current in each radiation characteristic parameter;

[0021] Get the bias correction time of the electrically cooled high-purity germanium detector;

[0022] The bias voltage critical value is dynamically adjusted according to the bias voltage correction time and the gradient information of the leakage current, so as to obtain a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection.

[0023] In some embodiments, determining the detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector at each bias voltage according to the output signals in each radiation characteristic parameter specifically includes:

[0024] For each bias voltage after the gradient increases, the effective signal segment of the high voltage electric field under the bias voltage is extracted from the output signals of the respective radiation characteristic parameters;

[0025] determining a signal-to-noise ratio of the high-voltage electric field under bias according to the effective signal segment;

[0026] The detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector under bias is determined by the signal-to-noise ratio, thereby obtaining the detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector under each bias.

[0027] In some embodiments, the radiation characteristic parameters include output signal, leakage current and energy resolution.

[0028] In some embodiments, the electrically cooled high-purity germanium detector is a semiconductor sensor used for high-energy resolution nuclear radiation detection.

[0029] In a second aspect, the present application provides a debugging and control system for an electrically cooled high-purity germanium detector, comprising a bias debugging unit, wherein the bias debugging unit comprises:

[0030] A monitoring module is used to start bias voltage debugging of the electrically cooled high-purity germanium detector during nuclear radiation detection, set the initial bias voltage value of the electrically cooled high-purity germanium detector, gradually increase the bias voltage of the electrically cooled high-purity germanium detector from the initial bias voltage value, and simultaneously monitor the radiation characteristic parameters in real time after each bias voltage gradient increase;

[0031] a processing module, configured to determine an escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector based on the initial bias voltage value and the energy resolution in each radiation characteristic parameter, and further determine a bias voltage critical value for complete separation of the electron-hole pairs during nuclear radiation detection based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector;

[0032] The processing module is further configured to determine a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias voltage critical value and the leakage current in each radiation characteristic parameter;

[0033] The processing module is further configured to determine the detection responsivity of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias voltage based on the output signals of the various radiation characteristic parameters, and then determine the noise disturbance amount of the high-voltage electric field during nuclear radiation detection based on all the detection responsivities;

[0034] An execution module is used to perform high-voltage compensation on the first boost gradient based on the noise disturbance amount, obtain a second boost gradient for increasing the bias voltage when the electron-hole pairs in the electrically cooled high-purity germanium detector are completely separated, and use the second boost gradient as the bias voltage debugging result of the electrically cooled high-purity germanium detector.

[0035] In a third aspect, the present application provides a computer device, comprising a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to call and run the computer program from the memory, so that the computer device executes the above-mentioned bias debugging method for nuclear radiation detection.

[0036] In a fourth aspect, the present application provides a computer-readable storage medium, in which instructions or codes are stored. When the instructions or codes are run on a computer, the computer implements the above-mentioned bias debugging method for nuclear radiation detection when executing the computer.

[0037] The technical solutions provided by the embodiments disclosed in this application have the following beneficial effects:

[0038] In a debugging control system and method for an electrically cooled high-purity germanium detector provided in the present application, bias debugging of the electrically cooled high-purity germanium detector during nuclear radiation detection is started, an initial bias value of the electrically cooled high-purity germanium detector is set, and the bias of the electrically cooled high-purity germanium detector is gradually increased from the initial bias value, while simultaneously monitoring the radiation characteristic parameters after each gradient increase of the bias in real time; the escape ability of electron-hole pairs in the electrically cooled high-purity germanium detector is determined by the initial bias value and the energy resolution in each radiation characteristic parameter, and then the bias critical value for complete separation of the electron-hole pairs during nuclear radiation detection is determined based on the escape ability and the separation electric field strength of the electrically cooled high-purity germanium detector ; Determine the first boost gradient of the bias increase of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias critical value and the leakage current in each radiation characteristic parameter; determine the detection response of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias voltage based on the output signal in each radiation characteristic parameter, and then determine the noise disturbance amount of the high-voltage electric field during nuclear radiation detection from all the detection responsiveness; perform high-voltage compensation on the first boost gradient based on the noise disturbance amount to obtain the second boost gradient of the bias increase when the electron-hole pairs of the electrically cooled high-purity germanium detector are completely separated, and use the second boost gradient as the bias debugging result of the electrically cooled high-purity germanium detector.

[0039] It can be seen that in the present application, the first boost gradient is compensated for with high voltage according to the noise disturbance amount, and the second boost gradient of the bias voltage increase when the electron-hole pairs of the electrically cooled high-purity germanium detector are completely separated is obtained, and the second boost gradient is used as the bias voltage debugging result of the electrically cooled high-purity germanium detector; first, the first boost gradient is determined to obtain the maximum bias voltage increase rate to avoid damage to the electrically cooled high-purity germanium detector, which can provide a balanced operating range for the electrically cooled high-purity germanium detector when the bias voltage is gradually increased, and can monitor the performance of the electrically cooled high-purity germanium detector in real time during the debugging process, thereby avoiding the complete separation of the electron-hole pairs due to excessively high bias voltage, and then can be used in the electrically cooled high-purity germanium detector. The cold high-purity germanium detector effectively reduces the debugging false alarm rate within the safety threshold; then, by determining the detection responsivity, the response capability of the electrically cooled high-purity germanium detector to a specific radiation source can be obtained. The detection responsivity under different bias conditions can quantify the impact of noise on the detection signal, which is convenient for subsequent targeted high-voltage compensation of the first boost gradient, thereby greatly enhancing the stability of the electrically cooled high-purity germanium detector in complex environments and reducing the possibility of false alarms; in summary, based on the above scheme, multi-gradient bias debugging of the bias increase in the electrically cooled high-purity germanium detector can be realized, thereby improving the nuclear radiation detection sensitivity of the electrically cooled high-purity germanium detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0041] Figure 1 is an exemplary flow chart of a bias voltage debugging method for nuclear radiation detection according to some embodiments of the present application;

[0042] Figure 2 is a structural diagram of an electrically cooled high-purity germanium detector according to some embodiments of the present application;

[0043] Figure 3 is a schematic diagram of a process for determining a bias voltage threshold according to some embodiments of the present application;

[0044] Figure 4 is a schematic structural diagram of a bias debugging unit according to some embodiments of the present application;

[0045] Figure 5 It is a structural diagram of a computer device for implementing a bias debugging method for nuclear radiation detection according to some embodiments of the present application. DETAILED DESCRIPTION

[0046] In order to better understand the technical solution of the present application, the technical solution of the present application will be described in detail below with reference to the accompanying drawings and specific implementation methods.

[0047] refer to Figure 1 , which is an exemplary flow chart of a bias voltage debugging method for nuclear radiation detection according to some embodiments of the present application. The bias voltage debugging method for nuclear radiation detection mainly includes the following steps:

[0048] In step 101, bias debugging of the electrically cooled high-purity germanium detector during nuclear radiation detection is started, an initial bias value of the electrically cooled high-purity germanium detector is set, and the bias of the electrically cooled high-purity germanium detector is gradually increased from the initial bias value, while the radiation characteristic parameters after each bias gradient increase are monitored in real time.

[0049] It should be noted that in this application, the electrically cooled high-purity germanium detector is a semiconductor sensor used for high-energy resolution nuclear radiation detection; the initial bias value is the voltage applied when the electrically cooled high-purity germanium detector is started. This initial bias value is used to activate the electric field of the electrically cooled high-purity germanium detector, thereby ensuring the effective generation and collection of electron-hole pairs.

[0050] In specific implementation, a standard nuclear radiation source with known radiation energy is placed in an electrically cooled high-purity germanium detector. Based on the equipment manual of the electrically cooled high-purity germanium detector or historical experience, a typical initial bias voltage value (the default is 300V) is selected as the initial bias voltage value of the electrically cooled high-purity germanium detector. The amplitude of each bias voltage increase is set to 4V, and it is maintained for 30 seconds after each increase. The program-controlled power supply of the electrically cooled high-purity germanium detector is used to gradually increase the bias voltage to the maximum value (for example: 500V). The central console of the electrically cooled high-purity germanium detector is used to monitor the radiation characteristic parameters after each gradient increase of the bias voltage.

[0051] It should be noted that in this application, the radiation characteristic parameters include output signal, leakage current and energy resolution, among which the output signal refers to the radiation signal output by the electrically cooled high-purity germanium detector; the leakage current refers to the current flowing through the electrically cooled high-purity germanium detector in the absence of an external signal; the energy resolution reflects the ability of the electrically cooled high-purity germanium detector to distinguish between rays of different energies. Usually, at lower bias voltages, the drift speed of electron-hole pairs is slower, which may cause signal overlap and reduce the resolution; and when the bias voltage increases, the resolution will gradually improve until an optimal point, and continuing to increase the bias voltage may not significantly improve the resolution.

[0052] In some embodiments, reference Figure 2 The diagram shows the structure of an electrically cooled high-purity germanium detector, a high-performance radiation detection device primarily used for nuclear radiation monitoring. Its structural design fully considers the functionality and reliability of the electrically cooled high-purity germanium detector. It comprises a sealing rubber ring 1, a steel washer 2, a line connector 3, a lower cover 4, an upper cover 5, a circuit board 6, a plug 7, a main housing 8, a three-in-one sensor upper cover 9, a sensor module 10, a sensor support 11, and a three-in-one sensor lower cover 12. The main housing is the core structure of the electrically cooled high-purity germanium detector, made of high-strength materials to provide the necessary mechanical protection and durability. The upper and lower covers are tightly connected by a sealing rubber ring to ensure the detector's internal environment is sealed, preventing the intrusion of external contaminants and moisture.

[0053] Inside the electrically cooled high-purity germanium detector, the sensor module is a key part, responsible for receiving and converting nuclear radiation signals. The sensor module is supported by a sensor holder to ensure that it is stable during operation and is not affected by vibration. The upper and lower sensor covers provide protection for the module to prevent physical damage and environmental impacts, while not hindering the entry of radiation, ensuring detection performance.

[0054] The circuit board is the "brain" of the electrically cooled high-purity germanium detector, responsible for processing signals from the sensor module and converting them into usable data. The board integrates multiple electronic components, including amplifiers and signal processing circuits, to ensure that the detected signals are accurately processed and transmitted. Furthermore, the electrically cooled high-purity germanium detector is equipped with a power connector and a grounding terminal.

[0055] The incoming connector is used to connect the external power supply and signal transmission lines to ensure the stability of the power supply and the efficient transmission of the signal; the grounding terminal is designed to provide electrical safety and prevent static electricity and interference from affecting the performance of the electrically cooled high-purity germanium detector. In order to ensure normal operation under various environmental conditions, the electrically cooled high-purity germanium detector structure also includes steel pads. These steel pads enhance the stability of the structure by contacting the main shell. At the same time, the plug is used to close the unused interface, effectively preventing external pollution and keeping the internal environment pure.

[0056] In step 102, the escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector is determined by the initial bias value and the energy resolution in each radiation characteristic parameter, and then the bias critical value for complete separation of electron-hole pairs during nuclear radiation detection is determined based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector.

[0057] It should be noted that in this application, in the electrically cooled high-purity germanium detector, when excited by photons or other particles of sufficient energy, electrons jump from the valence band to the conduction band, forming a free electron and a hole (a state where electrons are missing). The electron-hole pair represents the particle pair produced in the transition, in which the free electron can participate in conduction, while the hole behaves as a positively charged carrier. The generation and recombination process of the electron-hole pair directly affects the conductivity and performance of the electrically cooled high-purity germanium detector.

[0058] In some embodiments, determining the escape capability of electron-hole pairs in an electrically cooled high-purity germanium detector by using the initial bias voltage value and the energy resolution in each radiation characteristic parameter can be achieved by the following steps:

[0059] Determine the escape motion loss of electron-hole pairs in an electrically cooled high-purity germanium detector based on the energy resolution of each radiation characteristic parameter;

[0060] Determining the initial electric field strength of the electrically cooled high-purity germanium detector by using the initial bias voltage value;

[0061] The escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector is determined according to the escape motion loss and the electric field strength.

[0062] It should be noted that in this application, escape ability refers to the ability of electron and hole pairs to overcome motion loss under the action of an electric field and successfully reach the electrode of an electrically cooled high-purity germanium detector; escape motion loss refers to the energy loss of electron and hole pairs during the movement process; and initial electric field strength refers to the force exerted on unit charge in the electric field.

[0063] In a specific implementation, first, the radiation energy of the standard nuclear radiation source in the electrically cooled high-purity germanium detector is obtained. For the bias voltage after each gradient increase, the ratio of the energy resolution in the radiation characteristic parameters under the bias voltage to the radiation energy can be used as the escape loss under the bias voltage. Through the above method, the escape loss of the electron-hole pairs under each bias voltage can be obtained, and the sum of all the escape losses can be used as the escape motion loss of the electron-hole pairs in the electrically cooled high-purity germanium detector; then, the active thickness of the electrically cooled high-purity germanium detector is obtained, and the ratio of the initial bias voltage value to the active thickness can be used as the initial electric field strength of the electrically cooled high-purity germanium detector; finally, the ratio of the escape motion loss to the electric field strength can be used as the escape ability of the electron-hole pairs in the electrically cooled high-purity germanium detector.

[0064] It should be noted that in this application, the separation electric field strength refers to the electric field strength required for the complete decomposition of electron-hole pairs in the material. If the separation electric field strength is exceeded, electrical breakdown will occur. The separation electric field strength of the electrically cooled high-purity germanium detector can be obtained in the equipment description of the electrically cooled high-purity germanium detector; the carrier drift effect refers to the phenomenon that charged carriers (such as electrons and holes) move in a directed manner along the direction of the electric field under the action of the electric field. In the electrically cooled high-purity germanium detector, carrier drift is an important process that directly affects the response and performance of the detector. Specifically, the carrier drift effect is closely related to the external electric field applied inside the electrically cooled high-purity germanium detector.

[0065] In some embodiments, the bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection is determined based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector, with reference to Figure 3 As described above, the figure is a schematic diagram of the process of determining the bias threshold value in some embodiments of the present application. In this embodiment, determining the bias threshold value can be achieved by using the following steps:

[0066] In step 1021, the escape electric field strength during nuclear radiation detection is determined using the escape capability;

[0067] In step 1022, the effective drift amount of the carrier drift effect occurring inside the germanium material before the electron-hole pairs are completely separated is determined according to the separation electric field strength of the electrically cooled high-purity germanium detector;

[0068] In step 1023, a bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection is determined based on the escape electric field strength and the effective drift amount.

[0069] It should be noted that in this application, the bias critical value refers to the maximum bias value that the electrically cooled high-purity germanium detector can withstand; the effective drift amount refers to the drift degree of the carrier drift effect process that can occur in a specific electric field before the electron-hole pairs are completely separated; the escape electric field strength refers to the minimum electric field strength that allows electrons or holes to effectively escape in the electric field.

[0070] In the specific implementation, first, a Kinetic Monte Carlo Simulation (KMC) model is initialized, and the escape ability is used as the escape parameter of the KMC model. The KMC model is used to simulate and evaluate the electric field before the complete separation of electron-hole pairs in the electrically cooled high-purity germanium detector. The simulation evaluation result of the KMC model can be used as the escape electric field strength during nuclear radiation detection; then, the Coulomb attraction between electrons and holes in the electrically cooled high-purity germanium detector is obtained from the device description of the electrically cooled high-purity germanium detector, and the ratio of the separation electric field strength to the Coulomb attraction of the electrically cooled high-purity germanium detector can be used as the effective drift amount of the carrier drift effect inside the germanium material before the complete separation of the electron-hole pairs; finally, the product of the escape electric field strength and the effective drift amount can be used as the bias voltage critical value for the complete separation of the electron-hole pairs during nuclear radiation detection.

[0071] In step 103, a first boost gradient for increasing the bias voltage of the electrically cooled high purity germanium detector when performing nuclear radiation detection is determined according to the bias voltage critical value and the leakage current in each radiation characteristic parameter.

[0072] In some embodiments, determining a first boost gradient for increasing the bias voltage of an electrically cooled high-purity germanium detector during nuclear radiation detection based on the bias voltage threshold and the leakage current in each radiation characteristic parameter can be achieved by the following steps:

[0073] Determining the gradient information of the leakage current during nuclear radiation detection according to the leakage current in each radiation characteristic parameter;

[0074] Get the bias correction time of the electrically cooled high-purity germanium detector;

[0075] The bias voltage critical value is dynamically adjusted according to the bias voltage correction time and the gradient information of the leakage current, so as to obtain a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection.

[0076] It should be noted that in this application, the first boost gradient refers to the maximum bias voltage increase rate that prevents damage to the electrically cooled high-purity germanium detector; the bias correction time refers to the time required for the electrically cooled high-purity germanium detector to adjust from one bias voltage to another; and the gradient information refers to the set of change rates of leakage current affected by bias voltage changes during nuclear radiation detection.

[0077] In specific implementation, first, for the bias after each gradient increase, the difference between the leakage current in the radiation characteristic parameter corresponding to the bias and the leakage current in the radiation characteristic parameter corresponding to the bias before the gradient increase is used as the leakage current influence value under the bias, and the ratio of the leakage current influence value to the amplitude of the bias increase can be used as the gradient value of the leakage current in nuclear radiation detection under the bias. The gradient value of the leakage current in nuclear radiation detection under the bias after each gradient increase can be obtained in the above manner, and the set of all gradient values ​​can be used as the gradient information of the leakage current during nuclear radiation detection; then, the electrically cooled high purity germanium detector can be obtained in the device description of the electrically cooled high purity germanium detector. The bias correction time of the pure germanium detector; finally, a leakage current model based on a neural network is initialized, and each gradient value in the gradient information of the leakage current can be used as a variation parameter of the leakage current in the leakage current model, the bias correction time is used as the adjustment time in the leakage current model, and the bias critical value is used as the adjustment object of the leakage current model. The leakage current model is used to safely adjust the bias increase gradient of the electrically cooled high-purity germanium detector when performing nuclear radiation detection. The result of the safe adjustment of the leakage current model can be used as the first boost gradient of the bias increase of the electrically cooled high-purity germanium detector when performing nuclear radiation detection.

[0078] It should be noted that the leakage current model is a mathematical model constructed based on a neural network. The leakage current model aims to accurately predict the leakage current changes in the electrically cooled high-purity germanium detector. The leakage current model uses the gradient information of the leakage current, the bias correction time and the bias critical value as input parameters to realize dynamic adjustment of the bias voltage. It not only improves the safety of the electrically cooled high-purity germanium detector, but also enhances the detection performance of the electrically cooled high-purity germanium detector, so that the electrically cooled high-purity germanium detector can achieve complete separation of electron-hole pairs during nuclear radiation detection, thereby effectively improving the accuracy of nuclear radiation detection.

[0079] In step 104, the detection responsivity of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias voltage is determined based on the output signals in each radiation characteristic parameter, and then the noise disturbance amount of the high-voltage electric field during nuclear radiation detection is determined based on all the detection responsivities.

[0080] In some embodiments, determining the detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector at each bias voltage based on the output signals in each radiation characteristic parameter can be achieved by using the following steps:

[0081] For each bias voltage after the gradient increases, the effective signal segment of the high voltage electric field under the bias voltage is extracted from the output signals of the respective radiation characteristic parameters;

[0082] determining a signal-to-noise ratio of the high-voltage electric field under bias according to the effective signal segment;

[0083] The detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector under bias is determined by the signal-to-noise ratio, thereby obtaining the detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector under each bias.

[0084] It should be noted that in this application, detection responsivity refers to the response ability of an electrically cooled high-purity germanium detector to a specific radiation source; the effective signal segment refers to the signal portion with significantly higher signal intensity compared to the background noise during the detection process; and the signal-to-noise ratio is a measure of the ratio of signal intensity to noise intensity.

[0085] In specific implementation, first, for the bias after each gradient increase, the output signal in the radiation characteristic parameter corresponding to the bias is obtained, and the effective signal segment can be extracted from the output signal through a data processing algorithm (for example, window sliding technology); then, the effective signal segment is removed from the output signal as a noise signal segment, and the NumPy library in Python can be used to calculate the mean of the effective signal segment and the standard deviation of the noise signal segment, so that the mean of the effective signal segment and the standard deviation of the noise signal segment can be used as the signal-to-noise ratio of the high-voltage electric field under the bias; finally, the ratio of the signal-to-noise ratio to the bias can be used as the detection response of the high-voltage electric field in the electrically cooled high-purity germanium detector under the bias. The detection response of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias can be obtained in the above manner.

[0086] In some embodiments, determining the noise disturbance amount of the high voltage electric field during nuclear radiation detection from all detection responsiveness can be achieved by the following steps:

[0087] Determine the detection stability during nuclear radiation detection based on all detection responsiveness;

[0088] Based on the detection stability, the bias interference of the high-voltage electric field during nuclear radiation detection is evaluated to obtain the noise disturbance amount of the high-voltage electric field during nuclear radiation detection.

[0089] It should be noted that, in the present application, the noise disturbance amount indicates the degree of influence of the noise part of the signal in the high-voltage electric field on the bias safety; in specific implementation, first, the standard deviation of all detection responsiveness can be used as the detection stability during nuclear radiation detection, and the detection stability indicates the consistency of the output sensitivity of the electrically cooled high-purity germanium detector when performing multiple nuclear radiation detections; then, an electromagnetic interference model based on a support vector machine is initialized, and the detection stability can be used as the magnetic field stability parameter of the electromagnetic interference model. The electromagnetic interference model is used to quantify the bias interference of the high-voltage electric field during nuclear radiation detection, and the quantified result can be used as the noise disturbance amount of the high-voltage electric field during nuclear radiation detection.

[0090] In step 105, high-voltage compensation is performed on the first boost gradient based on the noise disturbance amount to obtain a second boost gradient for increasing the bias voltage when the electron-hole pairs in the electrically cooled high-purity germanium detector are completely separated. The second boost gradient is used as the bias voltage debugging result of the electrically cooled high-purity germanium detector.

[0091] In some embodiments, high-voltage compensation is performed on the first boost gradient based on the noise disturbance amount to obtain a second boost gradient that increases the bias voltage when the electron-hole pairs in the electrically cooled high-purity germanium detector are completely separated. This can be achieved by the following steps:

[0092] Determine the high-voltage perturbation coefficient of an electrically cooled high-purity germanium detector;

[0093] determining a high-voltage compensation amount for a bias voltage increase when complete separation of electron-hole pairs occurs according to the high-voltage disturbance coefficient and the noise disturbance amount;

[0094] A second boost gradient for increasing the bias voltage when complete separation of electron-hole pairs occurs in the electrically cooled high-purity germanium detector is determined by the high-voltage compensation amount and the first boost gradient.

[0095] It should be noted that in this application, the second boost gradient refers to the safe growth rate of the bias voltage of the electrically cooled high-purity germanium detector under high voltage; the high-voltage disturbance coefficient is a quantitative value of the degree of influence of the electric field change on the bias voltage in the electrically cooled high-purity germanium detector; and the high-voltage compensation amount represents the influence of the noise signal on the bias voltage.

[0096] In specific implementation, first, the response characteristics of the electrically cooled high-purity germanium detector to a standard nuclear radiation source under different bias voltages are measured through a large number of experiments, that is, the bias voltage and noise under different bias conditions are recorded, and the relationship between the bias voltage and noise is fitted through regression analysis (for example, support vector machine algorithm) to serve as the high-voltage perturbation coefficient; then, the product of the high-voltage perturbation coefficient and the noise perturbation amount can be used as the high-voltage compensation amount for the increase in bias voltage when complete separation of electron-hole pairs occurs; finally, the sum of the high-voltage compensation amount and the first boost gradient can be used as the second boost gradient for the increase in bias voltage when complete separation of electron-hole pairs occurs in the electrically cooled high-purity germanium detector.

[0097] In the present application, a first boost gradient is compensated for with high voltage according to the noise disturbance amount, and a second boost gradient is obtained for increasing the bias voltage when the electron-hole pairs of the electrically cooled high-purity germanium detector are completely separated, and the second boost gradient is used as the bias debugging result of the electrically cooled high-purity germanium detector; first, the first boost gradient is determined to obtain the maximum bias voltage increase rate to avoid damage to the electrically cooled high-purity germanium detector, and a balanced operating range can be provided for the electrically cooled high-purity germanium detector when the bias voltage is gradually increased, and the performance of the electrically cooled high-purity germanium detector can be monitored in real time during the debugging process, thereby avoiding complete separation of electron-hole pairs due to excessively high bias voltage, and then the electrically cooled high-purity germanium detector can be adjusted accordingly. The pure germanium detector effectively reduces the debugging false alarm rate within the safety threshold; then, by determining the detection responsivity, the response capability of the electrically cooled high-purity germanium detector to a specific radiation source can be obtained. The detection responsivity under different bias conditions can quantify the influence of noise on the detection signal, which is convenient for subsequent targeted high-voltage compensation of the first boost gradient, thereby greatly enhancing the stability of the electrically cooled high-purity germanium detector in complex environments and reducing the possibility of false alarms; in summary, based on the above scheme, multi-gradient bias debugging of the bias increase in the electrically cooled high-purity germanium detector can be realized, thereby improving the nuclear radiation detection sensitivity of the electrically cooled high-purity germanium detector.

[0098] In addition, in another aspect of the present application, in some embodiments, the present application provides a debugging control system for an electrically cooled high purity germanium detector, the debugging control system for the electrically cooled high purity germanium detector includes a bias debugging unit, Figure 4 , which is a schematic diagram of the structure of a bias debugging unit according to some embodiments of the present application. The bias debugging unit includes: a monitoring module 201, a processing module 202 and an execution module 203, which are described as follows:

[0099] Monitoring module 201, in this application, is mainly used to start bias voltage debugging of the electrically cooled high-purity germanium detector during nuclear radiation detection, set the initial bias voltage value of the electrically cooled high-purity germanium detector, gradually increase the bias voltage of the electrically cooled high-purity germanium detector from the initial bias voltage, and simultaneously monitor the radiation characteristic parameters in real time after each bias voltage gradient increase;

[0100] Processing module 202, in the present application, is used to determine the escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector based on the initial bias voltage value and the energy resolution in each radiation characteristic parameter, and further determine the bias voltage critical value for complete separation of the electron-hole pairs during nuclear radiation detection based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector;

[0101] It should be noted that the processing module 202 is further configured to determine a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias voltage threshold and the leakage current in each radiation characteristic parameter;

[0102] In addition, the processing module 202 is further configured to determine the detection responsivity of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias voltage based on the output signals of the various radiation characteristic parameters, and further determine the noise disturbance amount of the high-voltage electric field during nuclear radiation detection based on all the detection responsivities;

[0103] Execution module 203. In this application, execution module 203 is mainly used to perform high-voltage compensation on the first boost gradient based on the noise disturbance amount, obtain a second boost gradient in which the bias voltage increases when the electron-hole pairs are completely separated in the electrically cooled high-purity germanium detector, and use the second boost gradient as the bias debugging result of the electrically cooled high-purity germanium detector.

[0104] The above describes in detail an example of a debugging control system and method for an electrically cooled high-purity germanium detector provided in an embodiment of the present application. It can be understood that, in order to realize the above functions, the corresponding device includes a hardware structure and / or software module corresponding to the execution of each function. It should be easily appreciated by those skilled in the art that, in combination with the units and algorithm steps of each example described in the embodiments disclosed herein, the present application can be implemented in the form of hardware or a combination of hardware and computer software. Whether a function is executed in a hardware or computer software driven hardware manner depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0105] In some embodiments, the present application also provides a computer device, which includes a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to call and run the computer program from the memory, so that the computer device executes the above-mentioned bias debugging method for nuclear radiation detection.

[0106] In some embodiments, reference Figure 5 The dotted line in the figure indicates that the unit or module is optional. The figure is a structural diagram of a computer device for implementing a bias debugging method for nuclear radiation detection according to an embodiment of the present application. The bias debugging method for nuclear radiation detection described in the above embodiment can be Figure 5 The computer device shown in the figure is implemented, and the computer device includes at least one processor 301, a memory 302 and at least one communication unit 305. The computer device can be a terminal device, a server or a chip.

[0107] The processor 301 may be a general-purpose processor or a dedicated processor. For example, the processor 301 may be a central processing unit (CPU), which may be used to control the computer device, execute software programs, and process data from the software programs. The computer device may also include a communication unit 305 for inputting (receiving) and outputting (transmitting) signals.

[0108] For example, the computer device may be a chip, the communication unit 305 may be an input and / or output circuit of the chip, or the communication unit 305 may be a communication interface of the chip, and the chip may be a component of a terminal device, a network device, or other device.

[0109] For another example, the computer device may be a terminal device or a server, and the communication unit 305 may be a transceiver of the terminal device or the server, or the communication unit 305 may be a transceiver circuit of the terminal device or the server.

[0110] The computer device may include one or more memories 302, on which a program 304 is stored. The program 304 can be executed by the processor 301 to generate instructions 303, so that the processor 301 executes the method described in the above method embodiment according to the instructions 303. Optionally, data (such as a target audit model) can also be stored in the memory 302. Optionally, the processor 301 can also read data stored in the memory 302. The data can be stored at the same storage address as the program 304, or at a different storage address from the program 304.

[0111] The processor 301 and the memory 302 may be provided separately or integrated together, for example, integrated on a system on chip (SOC) of a terminal device.

[0112] It should be understood that each step of the above method embodiment can be completed by a hardware-based logic circuit or software-based instructions in the processor 301. The processor 301 can be a CPU, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), or other programmable logic devices, such as discrete gates, transistor logic devices, or discrete hardware components.

[0113] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0114] For example, in some embodiments, the present application also provides a computer-readable storage medium, which stores instructions or codes. When the instructions or codes are run on a computer, the computer implements the above-mentioned bias debugging method for nuclear radiation detection when executing.

[0115] Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0116] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A bias voltage debugging method for nuclear radiation detection, used for bias voltage debugging and control of an electrically cooled high-purity germanium detector, characterized in that: The method comprises the following steps: Start bias voltage debugging of the electrically cooled high-purity germanium detector during nuclear radiation detection, set the initial bias voltage value of the electrically cooled high-purity germanium detector, gradually increase the bias voltage of the electrically cooled high-purity germanium detector from the initial bias voltage value, and simultaneously monitor the radiation characteristic parameters in real time after each bias voltage gradient increase; Determining the escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector based on the initial bias voltage value and the energy resolution in each radiation characteristic parameter, and then determining the bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector; Determining a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias voltage critical value and the leakage current in each radiation characteristic parameter; The detection responsivity of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias voltage is determined based on the output signals of each radiation characteristic parameter, and the noise disturbance amount of the high-voltage electric field during nuclear radiation detection is determined based on all the detection responsivities. Based on the noise disturbance amount, high-voltage compensation is performed on the first boost gradient to obtain a second boost gradient for increasing the bias voltage when complete separation of electron-hole pairs occurs in the electrically cooled high-purity germanium detector. The second boost gradient is used as the bias voltage debugging result of the electrically cooled high-purity germanium detector.

2. The method according to claim 1, wherein Determining the escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector by using the initial bias voltage value and the energy resolution in each radiation characteristic parameter specifically includes: Determine the escape motion loss of electron-hole pairs in electrically cooled high-purity germanium detectors based on the energy resolution of various radiation characteristic parameters; Determining the initial electric field strength of the electrically cooled high-purity germanium detector by using the initial bias voltage value; The escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector is determined according to the escape motion loss and the electric field strength.

3. The method according to claim 1, wherein Determining the bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector specifically includes: Determining the escape electric field strength during nuclear radiation detection using the escape capability; The effective drift amount of the carrier drift effect inside the germanium material before the electron-hole pairs are completely separated is determined based on the separation electric field strength of the electrically cooled high-purity germanium detector. The bias voltage critical value for complete separation of electron-hole pairs during nuclear radiation detection is determined according to the escape electric field strength and the effective drift amount.

4. The method according to claim 1, wherein Determining a first boost gradient of the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias voltage critical value and the leakage current in each radiation characteristic parameter specifically includes: Determining the gradient information of the leakage current during nuclear radiation detection according to the leakage current in each radiation characteristic parameter; Get the bias correction time of the electrically cooled high-purity germanium detector; The bias voltage critical value is dynamically adjusted according to the bias voltage correction time and the gradient information of the leakage current, so as to obtain a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection.

5. The method according to claim 1, wherein Determining the detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector at each bias voltage based on the output signals in each radiation characteristic parameter specifically includes: For each bias voltage after the gradient increases, the effective signal segment of the high voltage electric field under the bias voltage is extracted from the output signals of the respective radiation characteristic parameters; determining a signal-to-noise ratio of the high-voltage electric field under bias according to the effective signal segment; The detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector under bias is determined by the signal-to-noise ratio, thereby obtaining the detection responsivity of the high voltage electric field in the electrically cooled high purity germanium detector under each bias.

6. The method according to claim 1, wherein The radiation characteristic parameters include output signal, leakage current and energy resolution.

7. The method according to claim 1, wherein The electrically cooled high-purity germanium detector is a semiconductor sensor used for high-energy resolution nuclear radiation detection.

8. A debugging and control system for an electrically cooled high-purity germanium detector, comprising a bias debugging unit, characterized in that: The bias debugging unit includes: A monitoring module is used to start bias voltage debugging of the electrically cooled high-purity germanium detector during nuclear radiation detection, set the initial bias voltage value of the electrically cooled high-purity germanium detector, gradually increase the bias voltage of the electrically cooled high-purity germanium detector from the initial bias voltage value, and simultaneously monitor the radiation characteristic parameters in real time after each bias voltage gradient increase; a processing module, configured to determine an escape capability of electron-hole pairs in the electrically cooled high-purity germanium detector based on the initial bias voltage value and the energy resolution in each radiation characteristic parameter, and further determine a bias voltage critical value for complete separation of the electron-hole pairs during nuclear radiation detection based on the escape capability and the separation electric field strength of the electrically cooled high-purity germanium detector; The processing module is further configured to determine a first boost gradient for increasing the bias voltage of the electrically cooled high-purity germanium detector when performing nuclear radiation detection based on the bias voltage critical value and the leakage current in each radiation characteristic parameter; The processing module is further configured to determine the detection responsivity of the high-voltage electric field in the electrically cooled high-purity germanium detector at each bias voltage based on the output signals of the various radiation characteristic parameters, and then determine the noise disturbance amount of the high-voltage electric field during nuclear radiation detection based on all the detection responsivities; An execution module is used to perform high-voltage compensation on the first boost gradient based on the noise disturbance amount, obtain a second boost gradient for increasing the bias voltage when the electron-hole pairs in the electrically cooled high-purity germanium detector are completely separated, and use the second boost gradient as the bias voltage debugging result of the electrically cooled high-purity germanium detector.

9. A computer device, characterized in that: The computer device includes a memory and a processor, the memory is used to store a computer program, and the processor is used to call and run the computer program from the memory, so that the computer device executes the bias debugging method for nuclear radiation detection according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores instructions or codes, which, when executed on a computer, enable the computer to implement the bias debugging method for nuclear radiation detection according to any one of claims 1 to 7.

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