Electrode assembly and semiconductor pre-cleaning apparatus

Abstract

The application provides an electrode assembly, which comprises a first electrode and a second electrode stacked in a vertical direction; the first electrode is located above the second electrode, and a cavity is arranged between the first electrode and the second electrode; the first electrode is provided with an air inlet part and an expansion part; the air inlet part is provided with an air inlet; the air inlet is communicated with the cavity; the expansion part is provided with an upper part and a lower part opposite to the upper part; the upper part of the expansion part is connected with the air inlet part; the lower part has a lower surface opposite to the second electrode; the expansion part is further provided with an inner wall and an outer wall; the inner wall constitutes a side wall of the cavity; one end of the outer wall is connected with the air inlet part; the other end of the outer wall is connected with the lower surface of the expansion part; the lower surface of the expansion part is provided with a dielectric part; and the dielectric part is located at the connecting area of the lower surface of the expansion part and the outer wall. The electrode assembly provided by the application can reduce the local high electric field area and improve the uniformity of the electric field strength.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, in particular to an electrode assembly and a semiconductor pre-cleaning device. BACKGROUND

[0002] In recent years, in the semiconductor manufacturing process, the remote plasma process is widely used in the wafer surface cleaning process, which can selectively remove the silicon surface of the silicon dioxide or silicon nitride impurities.

[0003] In the remote plasma process, the plasma is generated in the remote plasma source (RPS), and the plasma and free radicals are generated by exciting the process gas in the plasma generation chamber, and only the free radicals are delivered to the process chamber through the shower plate of the lower electrode. Such a method can reduce the physical damage of ion bombardment to the wafer in the process chamber, and the free radicals generated by the plasma will chemically react with the oxidation layer material to be removed on the wafer surface to generate volatile compounds, and finally decompose and volatilize by heating means. It is a pre-cleaning method with less damage and high cleaning efficiency. In order to stably supply free radicals to the process chamber during pre-cleaning, the design of the remote plasma source is crucial.

[0004] Hollow cathode discharge (HCD) is a special discharge process, which is usually used in plasma reactors. When a high voltage electric field is applied to the hollow cathode, electrons will be emitted from the surface of the hollow cathode. These electrons will collide with gas molecules, causing ionization of the gas molecules, generating free electrons and cations. Electrons and cations will form a discharge region inside the hollow cathode, and continue to collide in this region to generate more electrons and cations, thereby expanding the discharge region. In the discharge region, gas molecules will chemically react with free electrons and cations to generate free radicals.

[0005] When a high voltage electric field is applied to the hollow cathode, the cavity region near the ceramic insulator at the lower part of the hollow electrode will have a problem of local high electric field strength. SUMMARY

[0006] The purpose of the present application is to provide an electrode assembly and a semiconductor pre-cleaning device, which reduces the local high electric field region and improves the uniformity of the electric field strength.

[0007] In order to achieve the above purpose, the present application realizes the following technical scheme:

[0008] An electrode assembly, the electrode assembly comprising a first electrode and a second electrode stacked in a vertical direction; the first electrode is located above the second electrode, and a cavity is provided between the first electrode and the second electrode;

[0009] The first electrode is provided with an air inlet part and an expansion part, the air inlet part is provided with an air inlet, and the air inlet is communicated with the cavity;

[0010] The expansion part is provided with an upper part and a lower part opposite to the upper part, the upper part of the expansion part is connected with the air inlet part, and the lower part has a lower surface opposite to the second electrode; the expansion part is further provided with an inner wall and an outer wall, the inner wall constitutes a side wall of the cavity, one end of the outer wall is connected with the air inlet part, and the other end of the outer wall is connected with the lower surface of the expansion part;

[0011] The lower surface of the expansion part is provided with a dielectric part, and the dielectric part is located at the connection area of the lower surface of the expansion part and the outer wall.

[0012] Optionally, the electrode assembly further comprises a separation piece, the separation piece is located between the first electrode and the second electrode, and the separation piece electrically separates the first electrode and the second electrode; the separation piece is provided with a first side wall opposite to the outer wall of the expansion part of the first electrode, and a separation layer is arranged on the surface of the first side wall.

[0013] Optionally, a separation gap is arranged between the first side wall of the separation piece and the outer wall of the expansion part of the first electrode, and the dielectric part is further arranged on the outer wall of the expansion part of the first electrode.

[0014] Optionally, the dielectric part is filled in the separation gap.

[0015] Optionally, the first side wall of the separation piece is in contact with the outer wall of the expansion part of the first electrode; the dielectric part is arranged at the junction area of the lower surface of the expansion part of the first electrode and the first side wall of the separation piece, the connecting surface of the dielectric part and the first side wall is a first connecting surface, and the connecting surface of the dielectric part and the lower surface of the first electrode is a second connecting surface.

[0016] Optionally, the dielectric part forms a first contact width D at the first connecting surface, the dielectric part forms a second contact width d at the second connecting surface, and D>d.

[0017] Optionally, the second electrode is provided with a third surface opposite to the first electrode, the lower surface of the expansion part of the first electrode and the third surface of the second electrode form an electrode distance L, and the first contact width D is smaller than the electrode distance L.

[0018] Optionally, the cross section of the dielectric part is fan-shaped or triangular.

[0019] Optionally, the connecting position of the outer wall and the lower surface of the expansion part of the first electrode is arranged as an arc-shaped chamfer, and the dielectric part is arranged at the arc-shaped chamfer.

[0020] Optionally, the dielectric part is a dielectric material with a dielectric constant of 4-6.

[0021] Optionally, the dielectric part has a thickness of 0.2 mm or more.

[0022] Optionally, the dielectric constant of the isolation layer is 2-8, and the thickness of the isolation layer is greater than 0.1 mm.

[0023] Optionally, the inlet part and the expansion part of the first electrode are integrally formed, the expansion part is a ring-shaped member, the inner wall of the expansion part gradually increases in diameter from the inlet to a direction away from the inlet, and the outer wall of the expansion part has a constant diameter.

[0024] A semiconductor pre-cleaning device includes an electrode assembly and a process cavity arranged below the electrode assembly.

[0025] Compared with the prior art, the present application has the following advantages:

[0026] (1) By arranging the dielectric part on the lower surface of the first electrode expansion part and the outer wall of the expansion part, the dielectric constant of the dielectric part is located between the plasma in the cavity and the isolation member, the electric field distribution is homogenized by introducing the dielectric part, and the local electric field strength is reduced. By arranging the dielectric part at the connection area between the lower surface of the expansion part and the outer wall, the influence on the electric field environment of other areas of the cavity is reduced.

[0027] (2) By arranging the isolation layer on the first side wall of the isolation member, the interface characteristics of the isolation member and the plasma in the cavity are improved, the surface structure of the isolation member is optimized, the flatness of the surface of the isolation member is improved, and the uniformity of the electric field distribution is improved. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the present application, the drawings required to be used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings:

[0029] Figure 1 It is a structural schematic diagram of a semiconductor pre-cleaning device;

[0030] Figure 2 It is a structural schematic diagram of a first electrode;

[0031] Figure 3A It is a structural schematic diagram of an embodiment A of the present application;

[0032] Figure 3B It is a simulation result diagram of the embodiment A of the present application;

[0033] Figure 4A It is a structural schematic diagram of another embodiment A of the present application;

[0034] Figure 4B is a simulation result graph at another embodiment A of the present application;

[0035] Figure 5A is a structural schematic diagram at another embodiment A of the present application;

[0036] Figure 5B is a simulation result graph at another embodiment A of the present application;

[0037] Figure 6 is a structural schematic diagram at another embodiment A of the present application. DETAILED DESCRIPTION

[0038] The scheme proposed by the present application is further described in detail below in combination with the drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the drawings are greatly simplified and all use non-precise proportions, only to facilitate, clear and assist in the purpose of describing the embodiments of the present application. In order to make the purpose, features and advantages of the present application more apparent and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. shown in the drawings attached to the present specification are only used to cooperate with the content disclosed in the specification, for those skilled in the art to understand and read, and not to limit the conditions of the implementation of the present application, so it does not have the technical meaning, any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effect and purpose that can be produced by the present application, should still fall within the scope of the technical content disclosed by the present application.

[0039] The semiconductor device generally includes a wafer front end module (EFEM), a load lock chamber (Load Lock), a wafer transfer chamber (TM), and a process chamber (PM) connected in sequence. The wafer front end module transports the wafer to the load lock chamber and performs a process of pumping down the pressure. Then, under the action of a robot in the wafer transfer chamber, the wafer in the load lock chamber is moved to the wafer transfer chamber and then transferred to the process chamber for corresponding process treatment. According to different semiconductor processes, it can be divided into pre-cleaning, epitaxy, etching, ion implantation, etc. Different processes correspond to different process chambers.

[0040] Figure 1 is a structural schematic diagram of a semiconductor pre-cleaning device 100 provided by the present application, like Figure 1As shown, the semiconductor pre-cleaning device 100 comprises an electrode assembly, a distribution assembly, a process cavity and a support assembly. The electrode assembly is arranged at the upper end of the process cavity. The electrode assembly comprises a first electrode 10, a second electrode 11 and a spacer 12 arranged in a vertical direction. The first electrode 10 is arranged above the second electrode 11, and a cavity 104 for confining plasma is arranged between the first electrode 10 and the second electrode 11. The first electrode 10 and the second electrode 11 have a certain electrode distance L. The first electrode 10 is connected to a power supply, and the power supply is a radio frequency power supply. The second electrode is grounded, so as to form a capacitance between the first electrode 10 and the second electrode 11.

[0041] The first electrode 10 comprises a gas inlet portion 101 and an expansion portion 102, and the expansion portion 102 is arranged below the gas inlet portion 101. The gas inlet portion is provided with one or more gas inlets 103, and the gas inlets 103 are in communication with the cavity 104. The reaction gas enters the cavity 104 through the gas inlets 103, and the reaction gas entering the cavity 104 is excited to generate plasma. The gas inlet portion comprises a first surface 106 opposite to the second electrode and a second surface 107 opposite to the first surface. The gas inlets 103 penetrate through the first surface 106 and the second surface 107 of the gas inlet portion, and the gas inlets 103 are symmetrically distributed along the center line of the cavity 104. Further, the gas inlet portion 101 is further provided with a side surface connecting the first surface and the second surface. The gas inlet pipeline is arranged parallel to the second surface, and the gas inlet end of the gas inlet pipeline is arranged at the side surface of the gas inlet portion. The gas outlet end of the gas inlet pipeline, i.e. the gas inlets 103, is symmetrically distributed along the center line of the cavity. Optionally, the gas inlet portion is disc-shaped.

[0042] In some embodiments, as shown in Figure 1 and 2 The expansion portion is a ring-shaped member, and the expansion portion comprises an upper portion and a lower portion opposite to the upper portion. The upper portion of the expansion portion is connected to the first surface 106 of the gas inlet portion, and the lower portion has a lower surface 205 opposite to the lower electrode, an inner wall 206 and an outer wall 204. The inner wall constitutes the side wall of the cavity 104, and the diameter of the inner wall of the expansion portion gradually increases from the gas inlets 103 to the direction away from the gas inlets, i.e. the inner wall of the expansion portion is like an inverted cone or a funnel. Further, the diameter of the inner wall of the expansion portion is constant from the gas inlets 103 to the direction away from the gas inlets, i.e. the inner wall of the expansion portion is a cylindrical body. One end of the outer wall 204 is connected to the first surface 106 of the gas inlet portion, and the other end of the outer wall is connected to the lower surface 205 of the expansion portion. The diameter of the outer wall of the expansion portion is constant. When the expansion portion has a certain distance from the spacer, the distance between the outer wall of the expansion portion and the spacer remains unchanged, so as to avoid the occurrence of sparking due to the excessive local electric field caused by the small distance.

[0043] In some embodiments, as shown in Figure 1 The spacer 12 is disposed between the first electrode 10 and the second electrode 11, and the spacer 12 achieves electrical isolation of the first electrode and the second electrode. The spacer 12 is an annular member, which is disposed around or substantially around the extension 102 of the first electrode, and the height of the spacer is greater than the height of the extension (i.e. the distance from the first surface to the lower surface of the extension). The spacer 12 can be made of alumina ceramic or any other insulating material. The dielectric constant of the alumina ceramic is between 9 and 10.

[0044] In some embodiments, the second electrode 11 is provided with a third surface 112 opposite to the first electrode 10, and the lower surface 205 of the extension of the first electrode and the third surface 112 of the second electrode form an electrode distance L. By adjusting the electrode distance L, the uniformity of the plasma distribution between the first electrode 10 and the second electrode 11 can be improved. Further, the second electrode includes a plurality of gas passages 111 formed below the cavity to allow the plasma in the cavity to flow through the gas passages 111 into the process chamber 14. The gas passages of the second electrode are further provided with a distribution assembly (not shown) below the gas passages. Further, the distribution assembly is a circular gas distribution disc provided with openings, which can slow down the gas flow and guide the gas flow to be uniformly distributed, preventing the radicals flowing out of the gas passages from directly impacting the surface of the wafer 15.

[0045] In some embodiments, the support assembly 18 is located inside the process chamber for carrying the wafer 5 during the process. During the process, the wafer can be raised by the support assembly to be close to the gas distribution disc, so that the radicals can act on the surface of the wafer.

[0046] In some embodiments, the process chamber 14 is further provided with a liner (not shown), which is disposed on the inner surface of the sidewall of the process chamber and surrounds the support assembly 18, for uniformly distributing the process gas on the surface of the wafer and discharging the remaining process gas out of the process chamber 14 after the process is completed.

[0047] In some embodiments, as shown in Figure 3A and Figure 5A The lower surface of the extension is provided with a dielectric portion, which is located at the connection region 207 between the lower surface of the extension and the outer wall.

[0048] When the radio frequency power is applied to the first electrode 10, the cavity region near the end 207 of the first electrode has a high electric field strength, which is significantly higher than the electric field strength at other locations in the cavity. In order to improve the uniformity of the electric field strength, a dielectric part is provided at the end 207 of the first electrode, which is a dielectric material with a dielectric constant between 4 and 6. The dielectric constant of the dielectric part is between the plasma inside the cavity and the ceramic spacer. The dielectric part can be one or a mixture of epoxy resin, polyimide, polycarbonate, titanate, alumina, or silicon carbide. The dielectric part can be sprayed, coated, plated, or other methods to be set at the connection area 207 between the lower surface of the extension part and the outer wall of the first electrode. The specific method is determined by the characteristics of the dielectric part material, and is not limited thereto. The dielectric part has the ability to shield the electric field, and by providing the dielectric part at the end 207 of the first electrode, the electric field distribution can be changed, reducing the risk of direct discharge between the electrodes. By providing the dielectric part at the end 207 of the first electrode, i.e. at the connection area 207 between the lower surface of the extension part and the outer wall of the first electrode, the local electric field strength near the end of the first electrode can be reduced, but the electric field environment in other areas will not be affected, especially the electric field environment above the gas passage of the second electrode.

[0049] In some embodiments, as shown in Figure 6 The spacer is provided with a first side wall opposite to the outer wall of the extension part of the first electrode, and the surface of the first side wall is provided with a separation layer 121. The dielectric constant of the separation layer is a dielectric material with a dielectric constant of 2-8, and the thickness of the separation layer is greater than 0.1 mm. By providing the separation layer 121 on the surface of the first side wall of the spacer, the interface characteristics of the spacer and the gas inside the cavity can be improved, and the uneven distribution of the electric field strength caused by the uneven surface of the spacer itself or the material can be avoided.

[0050] In some embodiments, a separation gap is provided between the first side wall of the spacer and the outer wall of the extension part of the first electrode, and the outer wall of the extension part of the first electrode is also provided with the dielectric part. Further, the dielectric part is provided at the outer wall of the extension part close to the lower surface. When a separation gap is provided between the first side wall of the spacer and the first electrode, a strong electric field will be generated in the separation gap due to the voltage difference between the first electrode and the spacer. By providing the dielectric part on the outer wall of the extension part of the first electrode, the electric field distribution can be smoothed, and the local high electric field region can be reduced.

[0051] In some embodiments, the dielectric part is filled in the separation gap. The gas gap between the first electrode and the spacer is filled with the dielectric part, and the dielectric part as an electric field uniformization material can significantly reduce the local electric field strength.

[0052] In some embodiments, as shown in Figure 3AAs shown, the first side wall of the spacer is in contact with the outer wall of the extension of the first electrode; the lower surface of the first electrode extension is provided with a dielectric part 16 at the junction area with the first side wall of the spacer, the connecting surface of the dielectric part with the first side wall is a first connecting surface 161, and the connecting surface of the dielectric part with the lower surface is a second connecting surface 162. The dielectric part forms a first contact width D at the first connecting surface, and forms a second contact width d at the second connecting surface, and D≥d. The thickness of the dielectric part, i.e., the second contact width, is greater than or equal to 0.2 mm.

[0053] By providing the dielectric part at the junction area of the lower surface of the first electrode extension and the first side wall of the spacer, not only is the local electric field strength reduced by the dielectric part, but also the distance between the first electrode and the spacer is increased, thereby reducing the local electric field strength. As shown in Figure 4A and Figure 4B As shown, the end 207 of the first electrode is chamfered, and the local electric field strength is 32201.1 V / m; as shown in Figure 3A and Figure 3B As shown, the first electrode is not chamfered, and only a dielectric part is provided at the junction area 207 of the lower surface of the first electrode extension and the first side wall of the spacer, and the dielectric part is a dielectric material with a dielectric constant of 4. The electric field strength at the same position by providing the dielectric part is only 3113.8 V / m, which greatly reduces the local electric field strength and makes the electric field more uniform.

[0054] In some embodiments, the second electrode is provided with a third surface opposite to the first electrode, the lower surface of the first electrode extension forms an electrode distance L with the third surface of the second electrode, and the first contact width D is less than the electrode distance L.

[0055] In some embodiments, the cross section of the dielectric part is fan-shaped or triangular. The connecting surface of the dielectric part with the first side wall of the spacer is a first connecting surface, and the connecting surface of the dielectric part with the lower surface of the first electrode is a second connecting surface. One side of the first connecting surface is connected with one side of the second connecting surface, and the other side of the first connecting surface is connected with the other side of the second connecting surface through a curved surface, so that the cross section of the dielectric part is fan-shaped; the other side of the first connecting surface is connected with the other side of the second connecting surface through a plane, so that the cross section of the dielectric part is triangular. The other side of the first connecting surface can also be connected with the other side of the second connecting surface through other ways, which is not limited thereto.

[0056] In some embodiments, the outer wall of the first electrode extension is provided with an arc-shaped chamfer at the connecting position with the lower surface, and the dielectric part is arranged at the arc-shaped chamfer. As shown in Figure 5AAs shown, the dielectric part can be arranged in an arc-shaped chamfer shape, and the thickness of the dielectric part refers to the shortest distance from the chamfer outer edge to the dielectric part outer edge. The dielectric part thickness is greater than or equal to 0.2 mm. Further, the dielectric part forms a first contact width D at the first connecting surface, and forms a second contact width d at the second connecting surface, and D≥d.

[0057] As shown in Figure 4A and Figure 4B When a high-voltage electric field is applied to the first electrode, in order to prevent arc discharge caused by the accumulation of electric charges at the sharp point, a smooth chamfer is made at the end 207 of the first electrode. However, since the electric field in the area with small radius of curvature is also strong, only the first electrode is chamfered, that is, increasing the radius of curvature cannot effectively improve the problem of local high electric field strength. Figure 5A and 5B As shown, by arranging a dielectric part in the arc-shaped chamfer area, the dielectric part is a dielectric material with a dielectric constant of 6. Under the same conditions, the electric field strength at the chamfer in the chamber is 32201.1 V / m, and after arranging the dielectric part at the chamfer, the electric field strength at the same position is 10274.4 V / m, which is 1 / 3 of the original electric field strength, significantly improving the situation of local electric field overstrength.

[0058] In some embodiments, the gas inlet part of the first electrode further comprises a first surface opposite the second electrode; the spacer comprises an upper assembly surface and a lower assembly surface opposite the upper assembly surface; the first surface of the first electrode is connected to the upper assembly surface of the spacer, and the third surface of the second electrode is connected to the lower assembly surface of the spacer. A sealing member is further arranged between the first electrode and the upper assembly surface of the spacer, and the sealing member is an annular sealing ring. A sealing member is also arranged between the third surface of the second electrode and the lower assembly surface of the spacer, and the sealing member is an annular sealing ring.

[0059] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting; it is not intended to exclude myriad other embodiments of the present application that other present or future devices possess. That is, although specific embodiments have been disclosed herein, one of ordinary skill in the art will recognize that modifications and / or substitutions can be made to the disclosed embodiments without departing from the scope and spirit of the application. In addition, it is not intended that the scope of the application be limited to the examples described herein. Many modifications and variations of the present application are possible and will be apparent to those of ordinary skill in the art once the application has been made available or disclosed herein. Moreover, concepts have been described herein in one embodiment or implementation in language specific to structural features and / or methodological acts. It is to be understood that given the overall nature of the application, various changes in the implementations can be realized. Furthermore, it is to be understood that the specific order or hierarchy of steps in the processes / operations / acts disclosed is an illustration of exemplary processes.

[0060] While the application has been described in detail and with reference to specific embodiments thereof, it will be apparent to one of ordinary skill in the art that various changes and modifications can be made therein without departing from the spirit and scope of the application. It is therefore intended that such changes and modifications be included within the scope of the application as defined by the appended claims.

Claims

1. A semiconductor pre-cleaning device, characterized in that, include: Electrode assemblies are configured to generate remote plasma; A process chamber is disposed below the electrode assembly; The electrode assembly includes a first electrode and a second electrode stacked vertically; the first electrode is located above the second electrode, and a cavity is provided between the first electrode and the second electrode; the second electrode includes multiple gas passages. The first electrode is provided with an air inlet and an expansion part. The air inlet is provided with an air inlet and the air inlet is connected to the cavity. The extension section has an upper part and a lower part opposite to the upper part. The upper part of the extension section is connected to the air intake section, and the lower part has a lower surface opposite to the second electrode. The extension section also has an inner wall and an outer wall. The inner wall forms the side wall of the cavity, one end of the outer wall is connected to the air intake section, and the other end of the outer wall is connected to the lower surface of the extension section. The lower surface of the extension is provided with a dielectric part, which is located in the connection area between the lower surface of the extension and the outer wall. The electrode assembly further includes an isolator disposed between the first electrode and the second electrode, which electrically isolates the first electrode and the second electrode; the isolator has a first sidewall opposite to the outer wall of the extension portion of the first electrode, and the surface of the first sidewall is provided with an isolation layer. A separation gap is provided between the first sidewall of the isolator and the outer wall of the extension portion of the first electrode, and the dielectric portion is also disposed on the outer wall of the extension portion of the first electrode.

2. The semiconductor pre-cleaning equipment according to claim 1, characterized in that, The dielectric portion fills the separation gap.

3. The semiconductor pre-cleaning equipment according to claim 1, characterized in that, The first sidewall of the isolator is in contact with the outer wall of the extension portion of the first electrode; the dielectric portion is disposed at the junction area between the lower surface of the extension portion of the first electrode and the first sidewall of the isolator, the connection surface between the dielectric portion and the first sidewall of the isolator is the first connection surface, and the connection surface between the dielectric portion and the lower surface of the first electrode is the second connection surface.

4. The semiconductor pre-cleaning equipment according to claim 3, characterized in that, The dielectric part forms a first contact width D on the first connecting surface, and the dielectric part forms a second contact width d on the second connecting surface, wherein D ≥ d.

5. The semiconductor pre-cleaning equipment according to claim 4, characterized in that, The second electrode has a third surface opposite to the first electrode, and the lower surface of the first electrode extension and the third surface of the second electrode form an electrode distance L, and the first contact width D is less than the electrode distance L.

6. The semiconductor pre-cleaning equipment according to claim 5, characterized in that, The cross-section of the dielectric part is fan-shaped or triangular.

7. The semiconductor pre-cleaning equipment according to claim 3, characterized in that, The connection between the outer wall and the lower surface of the first electrode extension is set with an arc-shaped chamfer, and the dielectric part is disposed at the arc-shaped chamfer.

8. The semiconductor pre-cleaning equipment according to claim 1, characterized in that, The dielectric part is a dielectric material with a dielectric constant of 4 to 6.

9. The semiconductor pre-cleaning equipment according to claim 8, characterized in that, The thickness of the dielectric part is greater than or equal to 0.2 mm.

10. The semiconductor pre-cleaning equipment according to claim 1, characterized in that, The dielectric material of the isolation layer has a dielectric constant of 2 to 8, and the thickness of the isolation layer is greater than 0.1 mm.

11. The semiconductor pre-cleaning equipment according to claim 1, characterized in that, The air inlet and the extension of the first electrode are integrally formed. The extension is an annular part. The diameter of the inner wall of the extension gradually increases from the air inlet to the direction away from the air inlet, while the diameter of the outer wall of the extension remains unchanged.

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