Transfer method of semiconductor film

Abstract

The invention provides a method for transferring a semiconductor film, which comprises the following steps of: respectively applying temperature sources with different numerical values to two surfaces of a formed temporary bonding substrate, so that the temporary bonding substrate forms a relatively large temperature gradient along a direction vertical to the surface of the temporary bonding substrate, thereby generating relatively strong thermal stress in the temporary bonding substrate; the porosity of the first porous layer in the composite porous structure layer is greater than that of the second porous layer, so that the first porous layer is relatively poor in heat conduction capability and relatively low in mechanical strength, and is relatively easy to transversely crack at the first porous layer, so that the temporary bonding substrate is cracked; the transfer method has no special requirements on the types of materials and has relatively high universality, so that the manufacturing cost can be reduced, and compared with an ion stripping method, the transfer method can also effectively improve thermal stress mismatch generated in the transfer process of the semiconductor film and can realize high-quality transfer of the semiconductor film.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor device manufacturing, and in particular to a semiconductor film transfer method. Background Art

[0002] Material quality is the guarantee for improving the performance of high-performance semiconductor devices, so the development of high-quality semiconductor film preparation technology is particularly critical. In addition to growth preparation, high-precision and lossless transfer of semiconductor films is also crucial for device applications. In order to meet the needs of semiconductor device preparation technology, the following requirements generally need to be met during the transfer of semiconductor films: 1) The transfer process does not significantly affect the quality of the semiconductor film, and does not introduce high-density defects in the semiconductor film; 2) The transferred semiconductor film is not damaged, and the successful transfer area accounts for a large proportion (for example, >99%); 3) The thickness of the transferred semiconductor film is controllable and the thickness uniformity is good; 4) The film transfer process is simple, can be mass-produced, and the process cost is controllable.

[0003] In the existing semiconductor device preparation process, the method of first bonding and then partially removing the supply substrate is generally used. Among them, the methods of removing part of the supply substrate include: grinding and thinning method, ion stripping method and grinding and thinning combined with self-stop etching method. Among them, the grinding and thinning method can directly grind away the part of the supply substrate that needs to be removed, but this method is costly and has poor controllability of grinding thickness. It is not compatible with semiconductor processes with finer feature sizes, and it is more difficult to grind and remove when encountering semiconductor materials with higher hardness; the ion stripping method requires the injection of an appropriate amount of H, He and other types of ions into the supply substrate in advance, and then temperature annealing is performed after bonding to make the H and He ions gather into bubbles, thereby separating the supply substrate into two parts. Although this method has good thickness controllability, the required implanted ion concentration and stripping temperature of some materials are high, which results in high process cost, serious lattice damage, and serious thermal mismatch during stripping annealing, making it difficult to obtain high-quality semiconductor transfer films; the method of combining grinding thinning with self-stop etching can thin most of the supply substrate by grinding, so that the thinning process stops at other functional layers of the supply substrate, thereby achieving precise thinning of the supply substrate, but this method requires that the supply substrate must be a composite substrate and that there is a large selective etching ratio between different functional layers of the composite substrate, resulting in higher manufacturing costs.

[0004] Therefore, it is of great significance to develop a semiconductor thin film transfer method with greater universality, higher process reliability and lower process cost. Summary of the invention

[0005] In view of the shortcomings of the prior art mentioned above, the object of the present invention is to provide a method for transferring a semiconductor thin film, which is used to solve the problems existing in the existing transfer technology, such as high manufacturing cost, poor controllability of grinding thickness, incompatibility with fine feature size processes, severe lattice damage, severe thermal mismatch during annealing, and difficulty in obtaining high-quality semiconductor transferred films.

[0006] To achieve the above-mentioned object and other related objects, the present invention provides a method for transferring a semiconductor thin film, the method comprising the following steps:

[0007] Providing a transfer substrate, wherein the transfer substrate has a first surface and a second surface disposed opposite to each other, and forming a composite porous structure layer on the first surface of the transfer substrate;

[0008] Growing a semiconductor thin film on the surface of the composite porous structure layer;

[0009] Providing a supporting substrate, the supporting substrate having a first surface and a second surface opposite to each other, performing a bonding process on the first surface of the supporting substrate and the semiconductor film to form a temporary bonding substrate, the temporary bonding substrate having oppositely arranged surfaces;

[0010] The front and back sides of the temporary bonding substrate are clamped by fastening fixtures respectively, and a first temperature is applied to the front side of the temporary bonding substrate, and a second temperature is applied to the back side of the temporary bonding substrate, so that a temperature gradient is formed inside the temporary bonding substrate, thereby causing the temporary bonding substrate to be laterally cracked along the composite porous structure layer, and the semiconductor film after the cracking is transferred to the supporting substrate.

[0011] Optionally, the composite porous structure layer includes a plurality of porous layers with different porosities.

[0012] Optionally, the composite porous structure layer includes a first porous layer and a second porous layer with different porosities, and the porosity of the first porous layer close to the first surface of the transfer substrate is greater than the porosity of the second porous layer away from the first surface of the transfer substrate.

[0013] Optionally, the method for forming the composite porous structure layer includes an electrochemical corrosion process, and after completing the electrochemical corrosion process, the composite porous structure layer needs to be oxidized to form an oxide film layer that completely covers or partially covers the surface of the micro-nano structure inside the composite porous structure layer.

[0014] Optionally, before growing the semiconductor thin film on the composite porous structure layer, the step also includes selectively removing the oxide film layer covering the composite porous structure layer at a depth of 5 nm to 1 μm extending downward from the surface of the composite porous structure layer, and annealing the transfer substrate in a hydrogen atmosphere or a mixed atmosphere of hydrogen and inert gas, wherein the annealing temperature is 300 to 1400°C.

[0015] Optionally, before the support substrate is bonded to the semiconductor film, the method further includes forming a functional material layer on the first surface of the support substrate or on the semiconductor film.

[0016] Optionally, the functional material layer includes at least one of a single crystal semiconductor layer, a polycrystalline semiconductor layer, an amorphous material layer, an insulating dielectric layer, a piezoelectric material layer, a metal layer, and a compound conductive layer.

[0017] Optionally, before forming a temporary bonding substrate, a step of forming a patterned cavity structure is also included, wherein the patterned cavity structure can be completely located in the functional material layer in the depth direction, or span the interface between the functional material layer and the supporting substrate, or span the interface between the functional material layer and the semiconductor film, or be completely located in the supporting substrate and connected to the functional material layer.

[0018] Optionally, the first temperature is greater than the second temperature, and the difference between the first temperature and the second temperature is not less than 300°C.

[0019] Optionally, before the temporary bonding substrate is transversely cracked along the composite porous structure layer, a step of performing a high-temperature annealing and curing process on the temporary bonding substrate is also included.

[0020] Optionally, after the temporary bonding substrate is laterally cracked along the composite porous structure layer, the process further includes performing at least one of thinning, polishing, homoepitaxial growth or heteroepitaxial growth on the semiconductor film.

[0021] Optionally, the bonding process includes one of a hydrophilic bonding process, a thermal compression bonding process, a surface plasma activation bonding process or an anodic bonding process.

[0022] As described above, the semiconductor film transfer method of the present invention has the following beneficial effects: the semiconductor film transfer method of the present invention applies temperature sources of different values ​​to the two surfaces of the temporary bonding substrate respectively, so that the temporary bonding substrate forms a large temperature gradient in the direction perpendicular to the surface, thereby generating strong thermal stress inside it, so that the composite porous structure layer will be subjected to strong thermal stress, and because the thermal conductivity of the first porous layer is poor and the mechanical strength is low, it is more prone to lateral cracking, thereby causing the temporary bonding substrate to crack. Furthermore, the transfer method has no special requirements for the type of material and has strong universality, thereby reducing manufacturing costs. Compared with the ion stripping method, the transfer method can also effectively improve the thermal stress mismatch generated during the transfer of the semiconductor film, and can achieve high-quality transfer of the semiconductor film. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 The process flow chart of the semiconductor thin film transfer method provided by the present invention is shown.

[0024] Figures 2 to 9 Shown is a schematic diagram of the cross-sectional structure corresponding to each step in the semiconductor thin film transfer method provided by the present invention.

[0025] Component number description

[0026] 10. Transfer substrate; 101. First surface; 102. Second surface; 11. Composite porous structure layer; 110. First porous layer; 111. Second porous layer; 12. Semiconductor film; 13. Support substrate; 131. First surface; 132. Second surface; 14. Functional material layer; 15. Cavity structure; 16. Temporary bonding substrate; 161. Front surface; 162. Back surface; 17. Fastening fixture; S1~S4: steps. DETAILED DESCRIPTION

[0027] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0028] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the schematic diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0029] For convenience of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings.

[0030] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0031] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0032] The present invention provides a method for transferring a semiconductor film 12, such as Figure 1 As shown, it is a process flow chart of the transfer method of the semiconductor film 12, which includes the following steps:

[0033] S1: providing a transfer substrate 10, wherein the transfer substrate 10 has a first surface 101 and a second surface 102 arranged opposite to each other, and forming a composite porous structure layer 11 on the first surface 101 of the transfer substrate 10;

[0034] S2: growing a semiconductor thin film 12 on the surface of the composite porous structure layer 11;

[0035] S3: providing a support substrate 13, wherein the support substrate 13 has a first surface 131 and a second surface 132 opposite to each other, and performing a bonding process on the first surface 131 of the support substrate 13 and the semiconductor film 12 to form a temporary bonding substrate 16, wherein the temporary bonding substrate 16 has a front surface 161 and a back surface 162 opposite to each other;

[0036] S4: Use a fastening clamp 17 to clamp the front side 161 and the back side 162 of the temporary bonding substrate 16 respectively, and apply a first temperature to the front side 161 of the temporary bonding substrate 16, and apply a second temperature to the back side 162 of the temporary bonding substrate 16, so that a temperature gradient is formed inside the temporary bonding substrate 16, so that the temporary bonding substrate 16 is laterally cracked along the composite porous structure layer 11, and the semiconductor film 12 after the cracking is transferred to the supporting substrate 13.

[0037] The following is a further introduction to the transfer method of the semiconductor film 12 in conjunction with the accompanying drawings. It should be noted that the above sequence does not strictly represent the sequence of the transfer method of the semiconductor film 12 protected by the present invention. Those skilled in the art may change it according to the actual preparation steps. The following is a further introduction to the transfer method of the semiconductor film 12 in conjunction with the accompanying drawings, as follows:

[0038] In step S1, see Figure 1 and Figure 2 , providing a transfer substrate 10 , wherein the transfer substrate 10 has a first surface 101 and a second surface 102 that are oppositely disposed, and forming a composite porous structure layer 11 on the first surface 101 of the transfer substrate 10 .

[0039] As an example, Figure 2 As shown in a, the transfer substrate 10 has a first surface 101 and a second surface 102 that are arranged opposite to each other, wherein the material of the transfer substrate 10 can be a silicon-based material, such as a silicon wafer, silicon carbide or silicon oxide, and its shape can be circular, square or any other desired shape. In addition, the material of the transfer substrate 10 can also include any material of single crystal sapphire, aluminum nitride, gallium nitride, gallium arsenide, indium arsenide, indium phosphide and quartz, which is not particularly limited here. Before forming the composite porous structure layer 11 on the first surface 101 of the transfer substrate 10, the transfer substrate 10 needs to be cleaned, and various liquids in the RCA cleaning process and common cleaning liquids such as deionized water, ethanol, acetone, isopropanol, etc. are used in the cleaning process.

[0040] In one embodiment, a composite porous structure layer 11 is formed on the first surface 101 of the transfer substrate 10 , and the composite porous structure layer 11 includes N porous layer structures, wherein N>2, and the porosity of each porous layer is different.

[0041] In another embodiment, if Figure 2 As shown in b, the composite porous structure layer 11 includes a first porous layer 110 and a second porous layer 111 with different porosities and stacked in sequence, wherein the porosity of the first porous layer 110 close to the first surface 101 of the transfer substrate 10 is greater than the porosity of the second porous layer 111, and the second porous layer 111, as a low-porosity layer, has a relatively complete lattice structure, thereby ensuring that the semiconductor film 12 grown by the subsequent epitaxial process has a higher quality, and the first porous layer 110, as a high-porosity layer, has a lower thermal conductivity and weaker mechanical strength, thereby allowing the thermal stress generated subsequently to be concentrated thereon, making the first porous layer 110 more susceptible to lateral cracking, and making the formed temporary bonding substrate 16 more susceptible to cracking.

[0042] As an example, the method for forming the composite porous structure layer 11 includes an electrochemical corrosion process, and after completing the electrochemical corrosion process, the composite porous structure layer 11 needs to be oxidized to form an oxide film layer that completely covers or partially covers the surface of the micro-nano structure inside the composite porous structure layer 11.

[0043] Specifically, an electrochemical corrosion process is used for the first surface 101 of the transfer substrate 10, and the corrosion depth of the porosity of the composite porous structure layer 11 is regulated by adjusting parameters such as the type of current signal, current intensity, solution composition ratio, lighting conditions, and corrosion time. After the electrochemical corrosion process is completed to form the composite porous structure layer 11, the composite porous structure layer 11 is also required to be subjected to an oxidation process to form an oxide film layer that completely covers or partially covers the surface of the micro-nano structure inside the composite porous structure layer 11, thereby enhancing the strength of the composite porous structure layer 11.

[0044] As an example, before growing the semiconductor thin film 12 on the composite porous structure layer 11, the steps also include selectively removing the oxide film layer covering the composite porous structure layer 11 at a depth of 5 nm to 1 μm extending downward from the surface of the composite porous structure layer 11, and annealing the transfer substrate 10 in a hydrogen atmosphere or a mixed atmosphere of hydrogen and inert gas, wherein the annealing temperature ranges from 300 to 1400°C.

[0045] Before growing the semiconductor film 12 on the composite porous structure layer 11, it is also necessary to remove the oxide layer on the surface of the composite porous structure layer 11. Specifically, the oxide film layer covering the composite porous structure layer 11 is selectively removed by extending downward from the surface of the composite porous structure layer 11 to a depth of 5 nm to 1 μm. Then, the transfer substrate 10 and the composite porous structure layer 11 are annealed in a hydrogen atmosphere or a mixed atmosphere of hydrogen and an inert gas. The annealing temperature may be 300 to 1400°C, thereby further repairing the surface defects of the composite porous structure layer 11 and partially or completely healing the corrosion holes on the surface of the composite porous structure layer 11, which is more conducive to forming a high-quality semiconductor film 12.

[0046] In step S2, see Figure 1 and Figure 3 , a semiconductor thin film 12 is grown on the surface of the composite porous structure layer 11.

[0047] As an example, Figure 3As shown, epitaxial growth is performed on the surface of the composite porous structure layer 11 through an epitaxial process to obtain a semiconductor film 12 with a smooth surface. This embodiment does not specifically limit the process parameters of the semiconductor film 12, as long as a semiconductor film 12 with a smooth surface can be grown on the surface of the composite porous structure layer 11. It should be understood that those skilled in the art can achieve epitaxial growth of the semiconductor film 12 by controlling the epitaxial process conditions of the semiconductor film 12.

[0048] As an example, the material of the semiconductor thin film 12 can be the same as that of the transfer substrate 10, or different from that of the transfer substrate 10. The semiconductor thin film 12 can be a single-layer structure, or a multi-layer structure composed of different types of semiconductor film layers. Preferably, in this embodiment, the semiconductor thin film 12 is a multi-layer structure composed of different types of semiconductor film layers.

[0049] In step S3, see Figure 1 , Figure 4 and Figure 5 , providing a supporting substrate 13, wherein the supporting substrate 13 has a first surface 131 and a second surface 132 relative to each other, and performing a bonding process on the first surface 131 of the supporting substrate 13 and the semiconductor film 12 to form a temporary bonding substrate 16, wherein the temporary bonding substrate 16 has a front side 161 and a back side 162 relatively arranged.

[0050] As an example, Figure 4 As shown, the support substrate 13 has a first surface 131 and a second surface 132 relative to each other, wherein the material of the support substrate 13 may be a silicon-based material, such as a silicon wafer, silicon carbide or silicon oxide, and its shape may be circular, square or any other desired shape. In addition, the material of the support substrate 13 may also include any one of single crystal sapphire, aluminum nitride, gallium nitride, gallium arsenide, indium arsenide, indium phosphide and quartz, which is not particularly limited here. The material selection of the support substrate 13 may be the same as that of the transfer substrate 10, or may be different from that of the transfer substrate 10. Preferably, in this embodiment, the material selection of the support substrate 13 is the same as that of the transfer substrate 10.

[0051] As an example, Figure 4 As shown, before the support substrate 13 is bonded to the semiconductor film, the step of forming a functional material layer 14 on the first surface 131 of the support substrate 13 or on the semiconductor film 12 is also included.

[0052] Specifically, the first surface 131 of the support substrate 13 is bonded to the semiconductor film 12. Before bonding, a functional material layer 14 can be epitaxially grown on the first surface 131 of the support substrate 13 or on the semiconductor film 12 by an epitaxial process, so as to ensure the subsequent bonding quality of the support substrate 13 and the transfer substrate 10. The functional material layer 14 includes at least one of a single crystal semiconductor layer, a polycrystalline semiconductor layer, an amorphous material layer, an insulating dielectric layer, a piezoelectric material layer, a metal layer, and a compound conductive layer, that is, the functional material layer 14 can be composed of one of a single crystal semiconductor layer, a polycrystalline semiconductor layer, an amorphous material layer, an insulating dielectric layer, a piezoelectric material layer, a metal layer, and a compound conductive layer, or can be composed of multiple of a single crystal semiconductor layer, a polycrystalline semiconductor layer, an amorphous material layer, an insulating dielectric layer, a piezoelectric material layer, a metal layer, and a compound conductive layer, and there is no special restriction here. Preferably, in this embodiment, a bonding intercalation layer is formed on the first surface 131 of the support substrate 13.

[0053] In one embodiment, before forming the temporary bonding substrate 16, a step of forming a patterned cavity structure 15 is also included, wherein: Figure 5 As shown in a, the patterned cavity structure 15 can be completely located in the functional material layer 14 in the depth direction; or Figure 5 As shown in b, the patterned cavity structure 15 spans the interface between the functional material layer 14 and the supporting substrate 13; or as shown in Figure 5 As shown in FIG. 3 , the patterned cavity structure 15 spans the interface between the functional material layer 14 and the semiconductor film 12; or as shown in FIG. Figure 5 d, the patterned cavity structure 15 is completely located in the support substrate 13 and connected to the functional material layer 14. The arrangement of the patterned cavity structure 15 makes it easier to tape out the subsequently formed device. Preferably, in this embodiment, the patterned cavity structure 15 is completely located in the support substrate 13 and connected to the functional material layer 14.

[0054] like Figure 6 As shown, after forming the functional material layer 14, the first surface 131 of the support substrate 13 is bonded to the semiconductor film 12 to form a temporary bonding substrate 16, and the temporary bonding substrate 16 has a front side 161 and a back side 162 that are arranged opposite to each other. The bonding process includes one of a hydrophilic bonding process, a thermocompression bonding process, a surface plasma activation bonding process or an anodic bonding process. Preferably, in this embodiment, the bonding process is preferably a thermocompression bonding process.

[0055] In step S4, see Figure 1 , Figure 7 and Figure 8, the front side 161 and the back side 162 of the temporary bonding substrate 16 are clamped by a fastening clamp 17 respectively, and a first temperature is applied to the front side 161 of the temporary bonding substrate 16, and a second temperature is applied to the back side 162 of the temporary bonding substrate 16, so that a temperature gradient is formed inside the temporary bonding substrate 16, so that the temporary bonding substrate 16 is laterally cracked along the composite porous structure layer 11, and the semiconductor film 12 after the cracking is transferred to the supporting substrate 13.

[0056] As an example, before the temporary bonding substrate 16 is transversely cracked along the composite porous structure layer 11 , a step of performing a high-temperature annealing and curing process on the temporary bonding substrate 16 is also included.

[0057] Specifically, after the first surface 131 of the support substrate 13 is bonded to the semiconductor film 12 to form a temporary bonding substrate 16 , the temporary bonding substrate 16 is subjected to a high temperature annealing and curing process, thereby enhancing the bonding interface strength between the support substrate 13 and the semiconductor film 12 .

[0058] As an example, the first temperature is greater than the second temperature, and the difference between the first temperature and the second temperature is not less than 300°C.

[0059] Specifically, Figure 7 As shown, a fastening fixture 17 is used to clamp the front side 161 and the back side 162 of the temporary bonding substrate 16. The fastening fixture 17 can limit the warping of the temporary bonding substrate 16 to a certain extent, thereby preventing the temporary bonding substrate 16 from producing irreversible deformation under a higher temperature gradient, thereby improving the production yield; a first temperature is applied to the front side 161 of the temporary bonding substrate 16, and a second temperature is applied to the back side 162 of the temporary bonding substrate 16, wherein the first temperature is greater than the second temperature, and the difference between the first temperature and the second temperature is not less than 300°C, for example: the first temperature is 360°C, and the second temperature is 50°C. Through the above temperature setting, a temperature gradient is formed inside the temporary bonding substrate 16, and the direction of change of the temperature gradient is perpendicular to the front side 161 and the back side 162 of the temporary bonding substrate 16. The first porous layer 110 in the composite porous structure layer 11 is a high porosity layer, and its thermal conductivity is lower and its mechanical strength is weaker. The existence of the temperature gradient will cause thermal stress accumulation in the first porous layer 110, as shown in FIG. Figure 8 As shown, the temporary bonding substrate 16 is cleaved laterally along the first porous layer 110 , and cleavage occurs between the transfer substrate 10 and the support substrate 13 , thereby completing the transfer of the semiconductor film 12 to the support substrate 13 .

[0060] As an example, after the temporary bonding substrate 16 is cleaved laterally along the composite porous structure layer 11, the semiconductor film 12 is subjected to at least one of thinning, polishing, homoepitaxial growth or heteroepitaxial growth.

[0061] Specifically, Fig. 9 As shown, after the cleavage occurs between the transfer substrate 10 and the support substrate 13, the semiconductor film 12 on the surface of the support substrate 13 is thinned and polished to remove the remaining second porous layer 111, thereby improving the surface flatness and roughness of the semiconductor film 12 and reducing surface defects of the semiconductor film 12. In other embodiments, the semiconductor film 12 on the surface of the support substrate 13 may be subjected to corrosion, etching, specific atmosphere annealing, homoepitaxial growth or heteroepitaxial growth, etc., and the second porous layer 111 may also be removed.

[0062] In summary, the present invention provides a method for transferring a semiconductor thin film, by applying temperature sources of different values ​​to the two surfaces of a formed temporary bonding substrate, so that a large temperature gradient is formed in the temporary bonding substrate along a direction perpendicular to the surface of the temporary bonding substrate, thereby generating a strong thermal stress inside the temporary bonding substrate, so that the composite porous structure layer will be subjected to a strong thermal stress, and because the thermal conductivity of the first porous layer is poor and the mechanical strength is low, it is more prone to lateral cracking, thereby causing the temporary bonding substrate to crack. Furthermore, the transfer method has no special requirements on the type of material and has strong universality, thereby reducing manufacturing costs. Compared with the ion stripping method, the transfer method can also effectively improve the thermal stress mismatch generated during the transfer of the semiconductor film, and can achieve high-quality transfer of the semiconductor film.

[0063] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for transferring a semiconductor thin film, characterized in that: The semiconductor film transfer method comprises the following steps: Providing a transfer substrate, wherein the transfer substrate has a first surface and a second surface disposed opposite to each other, and forming a composite porous structure layer on the first surface of the transfer substrate; Growing a semiconductor thin film on the surface of the composite porous structure layer; Providing a supporting substrate, the supporting substrate having a first surface and a second surface opposite to each other, performing a bonding process on the first surface of the supporting substrate and the semiconductor film to form a temporary bonding substrate, the temporary bonding substrate having a front side and a back side opposite to each other; The front and back sides of the temporary bonding substrate are clamped by fastening fixtures respectively, and a first temperature is applied to the front side of the temporary bonding substrate, and a second temperature is applied to the back side of the temporary bonding substrate, so that a temperature gradient is formed inside the temporary bonding substrate, thereby causing the temporary bonding substrate to be laterally cracked along the composite porous structure layer, and the semiconductor film after the cracking is transferred to the supporting substrate.

2. The method for transferring a semiconductor thin film according to claim 1, characterized in that: The composite porous structure layer includes a plurality of porous layers with different porosities.

3. The method for transferring a semiconductor thin film according to claim 2, characterized in that: The composite porous structure layer includes a first porous layer and a second porous layer with different porosities, and the porosity of the first porous layer close to the first surface of the transfer substrate is greater than the porosity of the second porous layer far from the first surface of the transfer substrate.

4. The method for transferring a semiconductor thin film according to claim 1, characterized in that: The method for forming the composite porous structure layer includes an electrochemical corrosion process, and after completing the electrochemical corrosion process, the composite porous structure layer needs to be oxidized to form an oxide film layer that completely covers or partially covers the surface of the micro-nano structure inside the composite porous structure layer.

5. The method for transferring a semiconductor thin film according to claim 4, characterized in that: Before growing the semiconductor film on the composite porous structure layer, the method also includes the steps of selectively removing the oxide film layer covering the composite porous structure layer at a depth of 5 nm to 1 μm extending downward from the surface of the composite porous structure layer, and annealing the transfer substrate in a hydrogen atmosphere or a mixed atmosphere of hydrogen and an inert gas, wherein the annealing temperature ranges from 300 to 1400°C.

6. The method for transferring a semiconductor thin film according to claim 1, characterized in that: Before the support substrate is bonded to the semiconductor film, the method further includes forming a functional material layer on the first surface of the support substrate or on the semiconductor film.

7. The method for transferring a semiconductor thin film according to claim 6, characterized in that: The functional material layer includes at least one of a single crystal semiconductor layer, a polycrystalline semiconductor layer, an amorphous material layer, an insulating dielectric layer, a piezoelectric material layer, a metal layer, and a compound conductive layer.

8. The method for transferring a semiconductor thin film according to claim 7, characterized in that: Before forming a temporary bonding substrate, a step of forming a patterned cavity structure is also included, wherein the patterned cavity structure can be completely located in the functional material layer in the depth direction, or span the interface between the functional material layer and the supporting substrate, or span the interface between the functional material layer and the semiconductor film, or be completely located in the supporting substrate and connected to the functional material layer.

9. The method for transferring a semiconductor thin film according to claim 1, characterized in that: The first temperature is greater than the second temperature, and a difference between the first temperature and the second temperature is not less than 300°C.

10. The method for transferring a semiconductor thin film according to claim 1, characterized in that: Before the temporary bonding substrate is transversely cracked along the composite porous structure layer, the method further includes performing a high-temperature annealing and curing process on the temporary bonding substrate.

11. The method for transferring a semiconductor thin film according to claim 1, characterized in that: After the temporary bonding substrate is transversely cracked along the composite porous structure layer, the method further comprises the step of performing at least one of thinning, polishing, homoepitaxial growth or heteroepitaxial growth on the semiconductor film.

12. The method for transferring a semiconductor thin film according to claim 1, wherein: The bonding process includes one of a hydrophilic bonding process, a thermal compression bonding process, a surface plasma activation bonding process or an anodic bonding process.

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