IGCT power module and flexible direct current converter valve with through short circuit protection function

Abstract

The application discloses an IGCT power module and a flexible direct current (DC) converter valve with a through short circuit protection function. The IGCT power module with the through short circuit protection function comprises a DC capacitor, a first IGCT, a second IGCT, a first diode, a second diode, a bypass switch, an anode reactor, a clamping capacitor, a clamping resistor, a clamping diode and a through protection circuit. The through protection circuit is connected between the anode reactor and the clamping diode, or connected between the clamping diode and the first IGCT, or connected between the DC capacitor and the clamping capacitor, or connected between the clamping capacitor and the second IGCT. The through protection circuit is used for monitoring a loop current in real time, discovering a through short circuit fault in time and performing fault protection processing. The application can protect the IGCT power module under the through short circuit fault by adding the through protection circuit.

Description

TECHNICAL FIELD

[0001] The embodiment of the present application relates to the field of power electronics, in particular to an IGCT power module and a flexible direct current (HVDC) converter valve with a shoot-through short-circuit protection function. BACKGROUND

[0002] With the increasingly serious pollution problem caused by fossil energy and the continuous development of new energy power generation, efficient and reliable transmission of new energy power generation becomes a key problem. Since new energy power generation is often far away from the load center, for long-distance and large-capacity power transmission, flexible HVDC transmission technology has significant advantages. The core equipment of flexible HVDC transmission is a converter valve, which undertakes key tasks such as AC-DC conversion, power flow control, and fault ride-through.

[0003] The traditional HVDC converter valve adopts a cascaded mode based on a press-pack IGBT power module. The press-pack IGBT device has advantages such as failure short-circuit and double-sided heat dissipation. However, due to the use of multi-chip parallel connection inside, the manufacturing cost is increased, and the reliability of the device is reduced. Compared with IGBT, the IGCT device is an integrated wafer structure, which has lower on-state voltage drop, higher reliability, and lower manufacturing cost. However, due to the positive feedback conduction characteristics of the IGCT device itself, it does not have the IGBT device's retreat and characteristics. When a shoot-through short-circuit fault occurs, the device cannot rely on the drive board and the device to achieve short-circuit protection, resulting in large damage to the IGCT power module under a shoot-through short-circuit fault. SUMMARY

[0004] The present application provides an IGCT power module and a HVDC converter valve with a shoot-through short-circuit protection function, which can protect the IGCT power module under a shoot-through short-circuit fault by adding a shoot-through protection circuit.

[0005] According to an aspect of the present application, an IGCT power module with a shoot-through short-circuit protection function is provided, which comprises a DC capacitor, a first IGCT, a second IGCT, a first diode, a second diode, a bypass switch, an anode reactor, a clamping capacitor, a clamping resistor, a clamping diode, and a shoot-through protection circuit.

[0006] The first end of the direct current capacitor is connected with the first end of the clamping resistor and the first end of the anode reactor, the second end of the clamping resistor is connected with the cathode of the clamping diode and the first end of the clamping capacitor, the second end of the clamping capacitor is connected with the second end of the direct current capacitor, the cathode of the second IGCT, the anode of the second diode and the second end of the bypass switch, the second end of the anode reactor is connected with the anode of the clamping diode, the anode of the first IGCT and the cathode of the first diode, the first end of the bypass switch is connected with the cathode of the first IGCT, the anode of the first diode, the anode of the second IGCT and the cathode of the second diode.

[0007] The through protection circuit is connected between the direct current capacitor and the clamping resistor, or connected between the clamping resistor and the anode reactor, or connected between the anode reactor and the clamping diode, or connected between the clamping diode and the first IGCT, or connected between the direct current capacitor and the clamping capacitor, or connected between the clamping capacitor and the second IGCT, and the through protection circuit is used for monitoring the loop current in real time, discovering the through short circuit fault in time and performing fault protection processing.

[0008] Optionally, the through protection circuit comprises at least one IGBT, a Hall current sensor and a control board.

[0009] The control board is connected between the Hall current sensor and the IGBT, the Hall current sensor is used for detecting the current value of the IGCT power module loop in real time and uploading to the control board.

[0010] The control board is connected with the control end of the IGBT, and the control board is used for controlling the IGBT to be turned off when the current value exceeds the fault protection threshold value when the IGCT power module occurs through short circuit fault.

[0011] Optionally, the through protection circuit further comprises a fuse.

[0012] The fuse is connected with the IGBT, and the fuse is used for fusing to protect the IGCT power module when the IGBT fails to be turned off.

[0013] Optionally, the IGBT comprises a welding type device or a crimping type device.

[0014] Optionally, the fuse is connected with the first end of the IGBT.

[0015] Alternatively, the fuse is connected to the second end of the IGBT.

[0016] Optionally, the first end of the IGBT is a collector or an emitter, and the second end of the IGBT is a collector or an emitter.

[0017] Optionally, the through protection circuit is connected between the DC capacitor and the clamping resistor, or the through protection circuit is connected between the clamping resistor and the anode reactor, or the through protection circuit is connected between the anode reactor and the clamping diode, or the through protection circuit is connected between the clamping diode and the first IGCT, and the first end of the IGBT is a collector, and the second end of the IGBT is an emitter.

[0018] The through protection circuit is connected between the DC capacitor and the clamping capacitor, or the through protection circuit is connected between the clamping capacitor and the second IGCT, and the first end of the IGBT is an emitter, and the second end of the IGBT is a collector.

[0019] Optionally, the through protection circuit comprises at least two IGBTs connected in parallel and connected between the Hall current sensor and the fuse.

[0020] Optionally, the through short-circuit fault for which the IGBT power module is used to realize fault protection processing includes at least one of the following: through connection of the first IGCT and the second IGCT, through connection of the first IGCT and the second diode, through connection of the first diode and the second IGCT, and through connection of the first IGCT and the bypass switch.

[0021] According to another aspect of the present application, there is also provided a flexible direct current converter valve comprising the IGBT power module with a through short-circuit protection function according to any of the embodiments of the present application.

[0022] The technical solution of the embodiments of the present application provides an IGBT power module with a through short-circuit protection function, a through protection circuit is added, the through protection circuit can be flexibly arranged at multiple positions in the IGBT power module, the loop current is monitored in real time, the through short-circuit fault is found in time, and fault protection processing is performed, thereby realizing protection of the IGBT power module under a through short-circuit fault. In summary, the problem that the existing IGBT device does not have the protection and characteristics of the IGBT device and causes great damage to the IGBT power module under a through short-circuit fault is solved.

[0023] It is to be understood that the matters described in this section are not intended to identify key or essential features of the embodiments of the present application, nor are they intended to limit the scope of the present application. Other features of the present application will be apparent from consideration of the description and drawings. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0025] Figure 1 is a structural schematic diagram of an IGCT power module with a straight-through short circuit protection function according to an embodiment of the present application;

[0026] Figure 2 is a structural schematic diagram of a straight-through short circuit protection circuit according to an embodiment of the present application;

[0027] Figure 3 is a structural schematic diagram of a straight-through short circuit protection circuit using multiple IGCTs in parallel according to an embodiment of the present application;

[0028] Figure 4 is a structural schematic diagram of an IGBT with a first end as a collector and a second end as an emitter according to an embodiment of the present application;

[0029] Figure 5 is a structural schematic diagram of an IGBT with a first end as an emitter and a second end as a collector according to an embodiment of the present application. DETAILED DESCRIPTION

[0030] In order to make the technical personnel in the art better understand the present application scheme, the technical solutions in the embodiments of the present application will be described clearly and completely in the following with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should be within the scope of protection of the present application.

[0031] It should be noted that the terms "first", "second", and the like in the description and in the claims of the present application and the above-described accompanying drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to only those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0032] Figure 1 is a structural schematic diagram of an IGCT power module with a through short circuit protection function according to an embodiment of the present application, referring to Figure 1 , the embodiment of the present application provides an IGCT power module with a through short circuit protection function, the IGCT power module with a through short circuit protection function comprises: a direct current capacitor C, a first IGCT T1, a second IGCT T2, a first diode D1, a second diode D2, a bypass switch S, an anode reactor L i , a clamping capacitor C CL , a clamping resistor Rs, a clamping diode D CL and a through protection circuit 10.

[0033] The first end of the direct current capacitor C is connected with the first end of the clamping resistor Rs and the first end of the anode reactor L i The second end of the clamping resistor Rs is connected with the cathode of the clamping diode D CL and the first end of the clamping capacitor C CL The second end of the clamping capacitor C CL is connected with the second end of the direct current capacitor C, the cathode of the second IGCT T2, the anode of the second diode D2 and the second end of the bypass switch S, the second end of the anode reactor L i is connected with the anode of the clamping diode D CL , the anode of the first IGCT T1 and the cathode of the first diode D1, the first end of the bypass switch S is connected with the cathode of the first IGCT T1, the anode of the first diode D1, the anode of the second IGCT T2 and the cathode of the second diode D2.

[0034] The through protection circuit 10 is connected between the direct current capacitor C and the clamping resistor Rs; or the through protection circuit 10 is connected between the clamping resistor Rs and the anode reactor L i ; or the through protection circuit 10 is connected between the anode reactor L i and the clamping diode DCL between the DC capacitor C and the clamping diode D CL between the DC capacitor C and the clamping diode D CL between the DC capacitor C and the clamping diode D CL between the DC capacitor C and the clamping diode D; the through protection circuit 10 is used to monitor the loop current in real time, discover the through short circuit fault in time, and perform fault protection processing.

[0035] Specifically, the through protection circuit 10 can be arranged centrally or arranged at different positions in the IGCT power module circuit, such as the six positions 1-6 shown in Figure 1 The through protection circuit 10 can be composed of an IGBT, a Hall current sensor, a fuse series circuit, and a control board. When the IGCT power module has a through short circuit fault, the loop current will quickly rise, the Hall current sensor in the through protection circuit 10 detects the current value in real time and uploads it to the control board, and after the current value exceeds the fault protection threshold, the control board controls the IGBT in the through protection circuit to quickly turn off, disconnecting the through short circuit path, avoiding the discharge of the DC capacitor C to generate a large energy release, and protecting the IGCT power module. When the IGBT in the through protection circuit 10 fails to turn off, the fuse in the through protection circuit 10 will melt, avoiding further release of the energy of the DC capacitor C, and protecting the IGCT power module. The through protection circuit 10 can be flexibly arranged at multiple positions in the IGCT power module, monitor the loop current in real time, discover the through short circuit fault in time, and perform fault protection processing, which is very suitable for IGCT flexible AC transmission system (VSC) and other large power equipment based on IGCT.

[0036] The technical scheme of the embodiment of the application provides an IGCT power module with a through short circuit protection function. By adding a through protection circuit, the through protection circuit can be flexibly arranged at multiple positions in the IGCT power module, monitor the loop current in real time, discover the through short circuit fault in time, and perform fault protection processing, thereby achieving protection of the IGCT power module under a through short circuit fault. In summary, the problem that the existing IGCT device does not have the protection and characteristics of an IGBT device and causes large damage to the IGCT power module under a through short circuit fault is solved.

[0037] Figure 2 is a structural schematic diagram of a through short circuit protection circuit according to the embodiment of the application, and Figure 2 Optionally, the through protection circuit 10 comprises at least one IGBT 11, a Hall current sensor 12, and a control board 13.

[0038] The control board 13 is connected between the Hall current sensor 12 and the IGBT 11, and the Hall current sensor 12 is used to detect the current value of the IGBT power module loop in real time and upload to the control board 13.

[0039] The control board 13 is connected with the control end of the IGBT 11, and the control board 13 is used to control the IGBT 11 to be turned off when the IGBT power module occurs a shoot-through short circuit fault and the current value exceeds the fault protection threshold.

[0040] Specifically, when the IGBT power module occurs a shoot-through short circuit fault, the loop current will rapidly rise, the Hall current sensor 12 detects the current value in the loop in real time and uploads to the control board 13; after the control board 13 receives that the current value exceeds the fault protection threshold, the control board 13 issues a command to control the IGBT 11 in the shoot-through protection circuit 10 to be turned off rapidly, and the shoot-through short circuit path is disconnected, so that the large energy release generated by the discharge of the DC capacitor is avoided, and the IGBT power module is protected.

[0041] With reference to Figure 2 Optionally, the shoot-through protection circuit 10 further comprises a fuse 14.

[0042] The fuse 14 is connected with the IGBT 11, and the fuse 14 is used to protect the IGBT power module by fusing when the IGBT 11 fails to be turned off.

[0043] Specifically, when the IGBT 11 in the shoot-through protection circuit 10 fails to be turned off normally, the fuse 14 connected in series in the shoot-through protection circuit 10 will be fused, so that the further release of the energy of the DC capacitor is avoided, and the IGBT power module is protected.

[0044] Figure 3 It is a structural schematic diagram of a shoot-through short circuit protection circuit provided by an embodiment of the present application and adopting a parallel connection structure of multiple IGBTs, with reference to Figure 3 Optionally, the shoot-through protection circuit comprises at least two IGBTs 11, and the two IGBTs 11 are connected in parallel between the Hall current sensor 12 and the fuse 14.

[0045] Specifically, the IGBT 11 can be a single device or a parallel connection of multiple devices.

[0046] Optionally, the IGBT comprises a soldering type device or a crimping type device.

[0047] Specifically, the IGBT device can be a soldering type device or a crimping type device.

[0048] Optionally, the fuse is connected with the first end of the IGBT.

[0049] Alternatively, the fuse is connected with the second end of the IGBT.

[0050] Optionally, the first end of the IGBT is a collector or an emitter, and the second end of the IGBT is a collector or an emitter.

[0051] Figure 4 is a structural schematic diagram of an IGBT with a first end as a collector and a second end as an emitter according to an embodiment of the present application, referring to Figure 4 and Figure 1 Optionally, the through protection circuit 10 is connected between the DC capacitor C and the clamping resistor Rs; or the through protection circuit 10 is connected between the clamping resistor Rs and the anode reactor L i ; or the through protection circuit 10 is connected between the anode reactor L i and the clamping diode D CL ; or when the through protection circuit 10 is connected between the clamping diode D CL and the first IGCT T1, the first end of the IGBT is a collector, and the second end of the IGBT is an emitter.

[0052] Figure 5 is a structural schematic diagram of an IGBT with a first end as an emitter and a second end as a collector according to an embodiment of the present application, referring to Figure 5 and Figure 1 , the through protection circuit 10 is connected between the DC capacitor C and the clamping capacitor C CL ; or the through protection circuit 10 is connected between the clamping capacitor C CL and the second IGCT T2, the first end of the IGBT is an emitter, and the second end of the IGBT is a collector.

[0053] Specifically, the IGBT 11, the Hall current sensor 12 and the fuse 14 in the through protection circuit 10 can be arranged centrally or arranged at different positions in the IGCT power module string loop, such as the six positions 1-6 shown in Figure 1 . Among them, the emitter and collector direction of the IGBT depends on the arrangement position. When the IGBT is arranged at positions 1-4 in Figure 1 , the first end (left side) of the IGBT is a collector, and the second end (right side) of the IGBT is an emitter, as shown in Figure 4 . When the IGBT is arranged at positions 5 and 6 in Figure 1 , the first end (left side) of the IGBT is an emitter, and the second end (right side) of the IGBT is a collector, as shown in Figure 5 .

[0054] Referring to Figure 1Optionally, the through short circuit fault for realizing the fault protection process of the IGCT power module includes at least one of the following: the first IGCT T1 and the second IGCT T2 are in through connection, the first IGCT T1 and the second diode D2 are in through connection, the first diode D1 and the second IGCT T2 are in through connection, and the first IGCT T1 and the bypass switch S are in through connection.

[0055] Specifically, the through protection circuit 10 can realize the protected through short circuit fault conditions including the first IGCT T1 and the second IGCT T2 being in through connection, the first IGCT T1 and the second diode D2 being in through connection, the first diode D1 and the second IGCT T2 being in through connection, and the first IGCT T1 and the bypass switch S being in through connection.

[0056] The embodiments of the present application also provide a flexible direct current converter valve, which comprises the IGCT power module with the through short circuit protection function according to any of the embodiments of the present application.

[0057] Since the flexible direct current converter valve comprises the IGCT power module with the through short circuit protection function according to any of the embodiments of the present application, the above-mentioned flexible direct current converter valve has the same beneficial effects as the IGCT power module with the through short circuit protection function, and thus will not be described here again.

[0058] The above-mentioned specific embodiments do not constitute a limitation on the protection scope of the present application. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and replacements can be made according to design requirements and other factors. Any modification, equivalent replacement and improvement within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. An IGCT power module with a shoot-through short-circuit protection function, characterized in that The application relates to a direct-current capacitor, a first IGCT, a second IGCT, a first diode, a second diode, a bypass switch, an anode reactor, a clamping capacitor, a clamping resistor, a clamping diode and a through protection circuit. A first end of the direct-current capacitor is connected with a first end of the clamping resistor and a first end of the anode reactor; a second end of the clamping resistor is connected with a cathode of the clamping diode and a first end of the clamping capacitor; a second end of the clamping capacitor is connected with a second end of the direct-current capacitor; a cathode of the second IGCT, an anode of the second diode and a second end of the bypass switch are connected; a second end of the anode reactor is connected with an anode of the clamping diode; an anode of the first IGCT and a cathode of the first diode are connected; a first end of the bypass switch is connected with a cathode of the first IGCT; an anode of the first diode, an anode of the second IGCT and a cathode of the second diode are connected. The through protection circuit is connected between the direct-current capacitor and the clamping resistor, or connected between the clamping resistor and the anode reactor, or connected between the anode reactor and the clamping diode, or connected between the clamping diode and the first IGCT, or connected between the direct-current capacitor and the clamping capacitor, or connected between the clamping capacitor and the second IGCT; the through protection circuit is used for monitoring a loop current in real time, discovering a through short-circuit fault in time and performing fault protection treatment. The through protection circuit comprises at least one IGBT, a Hall current sensor and a control board.

2. The module of claim 1, wherein, The control board is connected between the Hall current sensor and the IGBT; the Hall current sensor is used for detecting a current value of an IGCT power module loop in real time and uploading the current value to the control board. The control board is connected with a control end of the IGBT; when the IGCT power module has a through short-circuit fault, the control board controls the IGBT to be turned off after the current value exceeds a fault protection threshold value. The through protection circuit further comprises a fuse.

3. The module of claim 2, wherein, The fuse is connected with the IGBT; when the IGBT cannot be turned off due to a fault, the fuse is used for performing fuse protection on the IGCT power module. The IGBT comprises a welding type device or a pressure contact type device.

4. The module of claim 2, wherein, The fuse is connected with a first end of the IGBT.

5. The module of claim 3, wherein, Alternatively, the fuse is connected with a second end of the IGBT. The first end of the IGBT is a collector or an emitter, and the second end of the IGBT is a collector or an emitter.

6. The module of claim 5, wherein, ​ 7. The module of claim 6, wherein, The through protection circuit is connected between the DC capacitor and the clamping resistor; or, the through protection circuit is connected between the clamping resistor and the anode reactor; or, the through protection circuit is connected between the anode reactor and the clamping diode; or, when the through protection circuit is connected between the clamping diode and the first IGCT, the first end of the IGBT is a collector, and the second end of the IGBT is an emitter. The through protection circuit is connected between the DC capacitor and the clamping capacitor; or, when the through protection circuit is connected between the clamping capacitor and the second IGCT, the first end of the IGBT is an emitter, and the second end of the IGBT is a collector.

8. The module of claim 3, wherein, The through protection circuit comprises at least two IGBTs connected in parallel and then connected between the Hall current sensor and the fuse.

9. The module of claim 1, wherein, The through short-circuit fault for realizing the fault protection processing of the IGCT power module comprises at least one of the following: through connection of the first IGCT and the second IGCT, through connection of the first IGCT and the second diode, through connection of the first diode and the second IGCT, and through connection of the first IGCT and the bypass switch.

10. A softfield converter valve, characterized in that The flexible direct current converter valve comprises the IGCT power module with the through short-circuit protection function according to any one of claims 1 to 9.

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