Manufacturing method of high-temperature-resistant high-precision quartz crystal oscillator

Abstract

The invention relates to the field of electronic components, and discloses a manufacturing method of a high-temperature-resistant high-precision quartz crystal oscillator. The manufacturing method of the high-temperature-resistant high-precision quartz crystal oscillator comprises the following steps: manufacturing the high-temperature-resistant quartz crystal wafer; manufacturing a high-temperature-resistant quartz crystal oscillator; manufacturing a high-temperature-resistant oscillating circuit; opening the electric fitting of the oscillator; opening frequency modulation and baking of an oscillator; and packaging and passivating the high-temperature-resistant high-precision quartz crystal oscillator. At present, a process method which can be directly adopted for processing and manufacturing the high-temperature-resistant and high-precision quartz crystal oscillator does not exist, and the process method still belongs to a research blank. According to the high-temperature-resistant and high-precision quartz crystal oscillator, the problem of blank of a high-temperature-resistant and high-precision quartz crystal oscillator product process manufacturing method is solved, batch production can be realized, meanwhile, the manufactured product can meet the requirements of a wide-temperature and high-temperature use environment of-65 DEG C to + 200 DEG C, and a wide-temperature working range and a high-temperature-resistant and high-precision frequency output function are realized.

Description

Technical Field

[0001] The invention relates to the field of electronic components, and in particular to a method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator. Background Art

[0002] A quartz crystal oscillator is an electronic component that uses the piezoelectric effect of a quartz crystal to generate a frequency signal. It has the characteristics of high precision, high stability, small size, and light weight. It can generate an oscillation signal with a precise frequency in the circuit. It is an indispensable component in various electronic devices and is widely used in many fields such as communication networks, industrial control, automotive electronics, instrumentation, and military equipment.

[0003] Nowadays, the manufacturing method of quartz crystal oscillators can mass-produce quartz crystal oscillators with an operating temperature range of -55℃ ~ +125℃, which meets the use requirements in most fields. In special fields such as lunar surface exploration and deep earth exploration, high-temperature resistant and high-precision quartz crystal oscillators with an operating temperature range of -65℃ ~ +200℃ are required. However, there is currently no directly adoptable process method for the processing and manufacturing of high-temperature resistant and high-precision quartz crystal oscillators, which is still a research gap. Therefore, a method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator is proposed. Summary of the invention

[0004] The purpose of the present invention is to provide a method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator, so as to solve the problem of a blank process for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator product, and to realize mass production.

[0005] To achieve the above purpose, the technical solution adopted by the present invention is as follows:

[0006] A method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator comprises the following stages:

[0007] Stage 1: Production of high temperature resistant quartz wafer

[0008] First, the quartz crystal block is ground and cut into long quartz crystal rods, then chamfered and cut into long quartz wafers according to the AT cut type 36°±20′, and then ground and cut into quartz wafer originals. After grinding, high-temperature chemical washing, corrosion, etc., high-temperature resistant quartz wafers are obtained for standby use;

[0009] Stage 2: Production of high temperature resistant quartz crystal oscillator

[0010] The high temperature resistant quartz wafer is cleaned, arranged, secondary cleaned and coated to obtain a high temperature resistant quartz crystal oscillator for standby use;

[0011] Stage 3: Fabrication of high temperature resistant oscillation circuit

[0012] First, the chip and the base are fixed together by bonding with a crystal adhesive, and after curing, the pins of the chip are welded and connected with the conductive path of the base by gold wire, so as to obtain a high temperature resistant oscillation circuit containing the chip and the base, which is ready for use;

[0013] Phase 4: Open oscillator electronics

[0014] Firstly, the high temperature resistant quartz crystal oscillator and the high temperature resistant oscillation circuit are bonded together by means of high temperature resistant conductive adhesive, and then cured to obtain an open oscillator for standby use;

[0015] Stage 5: Tuning and baking the open oscillator

[0016] First, fine-tune the open oscillator to obtain the required frequency, then bake it at high temperature and take it out for use;

[0017] Stage 6: Packaging and passivation of high-temperature resistant and high-precision quartz crystal oscillators

[0018] First, the open oscillator is sealed and packaged together with the sealing cover, and a high-temperature resistant and high-precision quartz crystal oscillator is obtained after printing. Then, the high-temperature resistant and high-precision quartz crystal oscillator is passivated and re-passivated, including gross leak detection, reflow soldering, accelerated aging, helium leak detection, temperature shock, secondary reflow soldering, secondary accelerated aging, normal temperature test, high and low temperature test and other test items to obtain a qualified high-temperature resistant and high-precision quartz crystal oscillator.

[0019] In more detail, the production of high temperature resistant quartz wafer includes the following steps, specifically:

[0020] Step 1: Take a quartz crystal block raw material, grind the X and Z surfaces of the quartz crystal block and cut it into strips using a multi-wire saw to form a quartz crystal rod for later use;

[0021] Step 2: Chamfer the four sides of the cut quartz crystal rod, check the X and Z surface angles and chamfer dimensions of the quartz crystal rod, and set aside;

[0022] Step 3: Place the quartz crystal rod into a multi-wire saw, select the AT cutting angle, slice the wafer at 36°±20′ to form a long quartz wafer, detect the angle of the long quartz wafer, and set aside;

[0023] Step 4: Grind the long quartz wafer through multiple passes with different sand numbers for thickness, grind the sticking wheel and the X-surface size of the wafer, cut and slice it using a multi-wire saw, and then grind the Z-surface of the original quartz wafer for size and set aside;

[0024] Step 5: The quartz wafer original piece is washed with high temperature chemical, and then the quartz wafer original piece is processed by frequency etching operation using a chemical agent (saturated solution of ammonium bifluoride), and then the final frequency sorting is performed to obtain a high temperature resistant quartz wafer for standby use. The obtained high temperature resistant quartz wafer is rectangular, with a length, width and thickness ratio greater than 10, and has a parallel upper surface and a lower surface. The high temperature resistant quartz wafer is provided with an error-proofing structure, including the length direction of the wafer as a first direction.

[0025] More specifically, the production of a high temperature resistant quartz crystal oscillator includes the following steps, specifically:

[0026] Step 1: Place the high temperature resistant quartz wafer in a cleaning basket, clean it in six steps using an ultrasonic cleaning machine and a special cleaning solution, and then put it into an oven at 150℃±10℃ for 30 to 60 minutes for drying. After drying, set it aside for use;

[0027] Step 2: Lay the cleaned high-temperature resistant quartz wafer flat on the tray of the automatic wafer arrangement machine, select the undamaged high-temperature resistant quartz wafer through the automatic wafer arrangement machine and transfer it to the coating fixture. After the coating fixture is full, take it out and install the cover plate for standby;

[0028] Step 3: Place the coating fixture with high temperature resistant quartz wafer in the cleaning basket, perform the second cleaning of six steps with the special cleaning liquid of ultrasonic cleaning machine, and then put it into the oven at 150℃±10℃ for 30-60 minutes for drying, and set it aside after drying;

[0029] Step 4: Place the coating fixture with the high temperature resistant quartz wafer into the coating machine, form electrodes by plating chrome layers and silver electrode layers on the upper and lower surfaces of the high temperature resistant quartz wafer to obtain a high temperature resistant quartz crystal oscillator for use, and the size of the coated electrodes is made according to the design requirements, and an upper surface coating electrode and an auxiliary electrode are formed on the upper surface of the high temperature resistant quartz wafer, and a lower surface coating electrode and an auxiliary electrode are formed on the lower surface. The upper surface coating electrode and the lower surface coating electrode are symmetrically distributed with the midpoint on the upper surface and the lower surface respectively, and both are rectangular structures.

[0030] In more detail, the production of the high temperature resistant oscillation circuit includes the following steps, specifically:

[0031] Step 1: Place the chip and the base into the automatic glue dispensing machine respectively, adhere the bottom of the chip to the groove of the base with the die-bonding glue, and take it out for later use;

[0032] Step 2: Put the base with the chip bonded into the oven, set the temperature to 150℃±10℃, bake for 50min±10min to solidify the chip on the base, and take it out for use;

[0033] Step 3: Place the base with the chip bonded to it into the bonding machine, set the preheating temperature of the bonding machine to 160℃±10℃, and weld the pins of the chip to the conductive path of the base through gold wires to obtain a high-temperature resistant oscillation circuit containing the chip and the base for use.

[0034] More specifically, the electrical installation of the open oscillator includes the following steps, specifically:

[0035] Step 1: Place the high temperature resistant quartz crystal oscillator and the high temperature resistant oscillation circuit into the automatic film loading and dispensing machine respectively, adhere the high temperature resistant quartz crystal oscillator to the high temperature resistant oscillation circuit with the high temperature resistant conductive glue, and take them out for use;

[0036] Step 2: Place the high temperature resistant oscillation circuit bonded with the high temperature resistant quartz crystal oscillator on the conveyor belt of the curing mesh belt furnace, set the first half to bake at 185℃±10℃ for more than 30min, and the second half to bake at 270±10℃ for more than 30min, fix the high temperature resistant quartz crystal oscillator on the high temperature resistant oscillation circuit, obtain an open oscillator, and take it out for use.

[0037] In more detail, the frequency tuning and baking of the open oscillator includes the following steps, specifically:

[0038] Step 1: Place the open oscillator into the fine-tuning machine, use the ion etching frequency modulation method to fine-tune the frequency of the high-temperature resistant quartz crystal oscillator, and after fine-tuning, test it according to the requirements of the design parameters and set it aside;

[0039] Step 2: Place the fine-tuned open oscillator into a vacuum oven, set to 150℃±3℃, vacuum bake for more than 24 hours, and take it out for later use.

[0040] In more detail, the packaging and passivation of the high temperature resistant and high precision quartz crystal oscillator includes the following steps, specifically:

[0041] Step 1: Put the baked open oscillator and the sealing cover into the sealing welding machine respectively, first vacuum bake the open oscillator at a temperature of 150℃±10℃ for 50 to 90 minutes, then seal and package the sealing cover and the open oscillator by high-frequency current parallel welding in a vacuum environment or a nitrogen-filled environment, take them out and print them, and obtain a high-temperature resistant and high-precision quartz crystal oscillator for standby use;

[0042] Step 2: Rough leak detection: Use pressurized airtight test liquid to check the sealing of the high-temperature resistant and high-precision quartz crystal oscillator for rough leaks. No obvious bubbles are required to precipitate, and then take it out for use;

[0043] Step 3: Reflow soldering, place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the reflow soldering machine, set eight temperature zones to 180℃, 220℃, 300℃, 310℃, 330℃, 330℃, 330℃, 330℃, allowable temperature variation of ±10℃, transmission speed of 10min±10s, conduct two consecutive high-temperature operation tests of reflow soldering, and then test it according to the requirements of design parameters for standby;

[0044] Step 4: Accelerate aging. Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray and put it into an aging oven. Set the oven to 125℃±10℃ / 72h or 200℃±10℃ / 24h to release and eliminate the residual stress in the processing of the high-temperature resistant and high-precision quartz crystal oscillator. Let the product enter the stable period in advance, and then test it according to the requirements of the design parameters for standby use.

[0045] Step 5: Helium leak detection: Place the high-temperature resistant and high-precision quartz crystal oscillator in an anti-static gauze, put it in a pressurized tank, set 99.99% high-purity helium to pressurize for more than 2 hours, the pressure is 0.4-0.6MPa, and then put it into a helium mass spectrometer leak detector for helium leak detection. The helium leak detection is required to meet the leakage rate of no more than 5*10 -3 Pa.cm 3 / s standard, and then take it out for use;

[0046] Step 6: Temperature shock: Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray and put it into a temperature shock box. Set the low temperature to -65℃±3℃ and the high temperature to +200℃±3℃. Perform 10 cycles of shock to test the reliability, stability and durability of the product at different temperatures. Then, test it according to the design parameter requirements and keep it ready for use.

[0047] Step 7: Secondary reflow soldering: Place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the reflow soldering machine, set eight temperature zones to 180°C, 220°C, 300°C, 310°C, 330°C, 330°C, 330°C, 330°C, allowable temperature variation of ±10°C, transmission speed of 10min±10s, perform two consecutive high-temperature operation tests of reflow soldering, and then test it according to the requirements of the design parameters for standby use;

[0048] Step 8: Secondary accelerated aging: Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray, put it into an aging oven, set it to 125℃±10℃ / 72h or 200℃±10℃ / 24h, release and eliminate the residual stress in the processing of the high-temperature resistant and high-precision quartz crystal oscillator, let the product enter the stable period in advance, and then test it according to the requirements of the design parameters for standby;

[0049] Step 9: Normal temperature test: test according to the design parameters at a normal temperature of 25℃±3℃ and keep it ready for use;

[0050] Step 10: High and low temperature test: Place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the temperature measuring machine, set the temperature working range to -65℃~+200℃, test the electrical performance parameters of the product, and then take it out for use. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 Flow chart of the method for making the present invention

[0052] Figure 2 Schematic diagram of the structure of the high temperature resistant quartz crystal oscillator of the present invention

[0053] Figure 3 Schematic diagram of the high temperature resistant oscillation circuit of the present invention

[0054] Figure 4 A top view of the open oscillator of the present invention

[0055] Figure 5 Schematic diagram of the product structure of the present invention

[0056] In the figure, 1. high temperature resistant quartz wafer, 2. upper surface plated electrode, 3. lower surface plated electrode, 4. secondary electrode, 5. conductive path, 6. high temperature resistant oscillation circuit, 7. open oscillator, 8. base, 9. chip, 10. high temperature resistant quartz crystal oscillator, 11. sealing cover, 12. high temperature resistant conductive adhesive. DETAILED DESCRIPTION

[0057] The present invention is further described below in conjunction with the accompanying drawings and embodiments. The embodiments of the present invention include but are not limited to the following embodiments.

[0058] Example

[0059] like Figure 1 As shown, a method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator comprises the following steps:

[0060] Stage 1: Production of high temperature resistant quartz wafer 1

[0061] Step 1: Take a quartz crystal block raw material, grind the X and Z surfaces of the quartz crystal block and cut it into strips using a multi-wire saw to form a quartz crystal rod for later use;

[0062] Step 2: Chamfer the four sides of the cut quartz crystal rod, check the X and Z surface angles and chamfer dimensions of the quartz crystal rod, and set aside;

[0063] Step 3: Place the quartz crystal rod into a multi-wire saw, select the AT cutting angle, slice the wafer at 36°±20′ to form a long quartz wafer, detect the angle of the long quartz wafer, and set aside;

[0064] Step 4: Grind the long quartz wafer through multiple passes with different sand numbers for thickness, grind the grit and wafer X surface size, cut and slice it using a multi-wire saw, and then grind the size of the Z surface of the original quartz wafer for standby use;

[0065] Step 5: The quartz wafer original piece is washed with high temperature chemical, and then the quartz wafer original piece is processed by frequency etching operation using a chemical agent (saturated solution of ammonium bifluoride), and then the final frequency sorting is performed to obtain a high temperature resistant quartz wafer 1 for standby use. The obtained high temperature resistant quartz wafer 1 is rectangular, with a length, width and thickness ratio greater than 10, and has a parallel upper surface and a lower surface. The high temperature resistant quartz wafer 1 is provided with an error-proofing structure, including the length direction of the wafer as a first direction.

[0066] Stage 2: Production of high temperature resistant quartz crystal oscillator 10

[0067] Step 1: Place the high temperature resistant quartz wafer 1 in a cleaning basket, clean it in six steps using an ultrasonic cleaning machine and a special cleaning solution, and then put it into an oven at 150°C ± 10°C for 30 to 60 minutes for drying. After drying, set it aside for use;

[0068] Step 2: Lay the cleaned high temperature resistant quartz wafer 1 flat on the tray of the automatic wafer arrangement machine, select the undamaged high temperature resistant quartz wafer 1 through the automatic wafer arrangement machine and transfer it to the coating fixture. After the coating fixture is full, take it out and install the cover plate for standby use;

[0069] Step 3: Place the coating fixture with the high temperature resistant quartz wafer 1 in the cleaning basket, perform the second cleaning of the six steps with the special cleaning liquid of the ultrasonic cleaning machine, and then put it into the oven at 150℃±10℃ for 30 to 60 minutes for drying, and then set it aside for use;

[0070] Step 4: Place the coating fixture with the high temperature resistant quartz wafer 1 into the coating machine, and form electrodes by plating chrome layers and silver electrode layers on the upper and lower surfaces of the high temperature resistant quartz wafer 1 to obtain a high temperature resistant quartz crystal oscillator 10 for use. The dimensions of the plated electrodes are made according to the design requirements, and an upper surface coating electrode 2 and an auxiliary electrode 4 are formed on the upper surface of the high temperature resistant quartz wafer 1, and a lower surface coating electrode 3 and an auxiliary electrode 4 are formed on the lower surface. The upper surface coating electrode 2 and the lower surface coating electrode 3 are symmetrically distributed with respect to the midpoint on the upper surface and the lower surface, respectively, and are both rectangular structures.

[0071] Stage 3: Production of high temperature resistant oscillation circuit 6

[0072] Step 1: Place the chip 9 and the base 8 into the automatic glue dispensing machine respectively, adhere the bottom of the chip 9 to the groove of the base 8 with the solid crystal glue, and take it out for use;

[0073] Step 2: Put the base 8 with the chip 9 bonded thereto into an oven, set the temperature to 150°C ± 10°C, bake for 50min ± 10min to solidify the chip 9 on the base 8, and take it out for later use;

[0074] Step 3: Place the base 8 with the chip 9 bonded to it into a bonding machine, set the preheating temperature of the bonding machine to 160°C±10°C, and weld the pins of the chip 9 to the conductive path 5 of the base 8 through gold wires to obtain a high-temperature resistant oscillation circuit 6 containing the chip 9 and the base 8 for use.

[0075] Phase 4: Opening the electrical equipment of oscillator 7

[0076] Step 1: Place the high temperature resistant quartz crystal oscillator 10 and the high temperature resistant oscillation circuit 6 into the automatic film loading and dispensing machine respectively, adhere the high temperature resistant quartz crystal oscillator 10 to the high temperature resistant oscillation circuit 6 through the high temperature resistant conductive glue 12, and take them out for use;

[0077] Step 2: Place the high temperature resistant oscillation circuit 6 bonded with the high temperature resistant quartz crystal oscillator 10 on the conveyor belt of the curing mesh belt furnace, set the first half to bake at 185℃±10℃ for more than 30 minutes, and the second half to bake at 270±10℃ for more than 30 minutes, fix the high temperature resistant quartz crystal oscillator 10 on the high temperature resistant oscillation circuit 6, obtain the open oscillator 7, and take it out for use.

[0078] Stage 5: Tuning and baking of open oscillator 7

[0079] Step 1: Place the open oscillator 7 into a fine-tuning machine, use the ion etching frequency modulation method to fine-tune the frequency of the high-temperature resistant quartz crystal oscillator 10, and after fine-tuning, test it according to the requirements of the design parameters and set it aside;

[0080] Step 2: Place the finely adjusted open oscillator 7 into a vacuum oven, set the temperature to 150°C ± 3°C, and vacuum bake for more than 24 hours, then take it out for later use.

[0081] Stage 6: Packaging and passivation of high-temperature resistant and high-precision quartz crystal oscillators

[0082] Step 1: Put the baked open oscillator 7 and the sealing cover sheet 11 into the sealing welding machine respectively, firstly vacuum bake the open oscillator 7 at a temperature of 150°C ± 10°C for 50 to 90 minutes, then seal and package the sealing cover sheet 11 and the open oscillator 7 by high-frequency current parallel welding in a vacuum environment or a nitrogen-filled environment, take them out and print them, and obtain a high-temperature resistant and high-precision quartz crystal oscillator for standby use;

[0083] Step 2: Rough leak detection: Use pressurized airtight test liquid to check the sealing of the high-temperature resistant and high-precision quartz crystal oscillator for rough leaks. No obvious bubbles are required to precipitate, and then take it out for use;

[0084] Step 3: Reflow soldering, place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the reflow soldering machine, set eight temperature zones to 180℃, 220℃, 300℃, 310℃, 330℃, 330℃, 330℃, 330℃, allowable temperature variation of ±10℃, transmission speed of 10min±10s, conduct two consecutive high-temperature operation tests of reflow soldering, and then test it according to the requirements of design parameters for standby;

[0085] Step 4: Accelerate aging. Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray and put it into an aging oven. Set the oven to 125℃±10℃ / 72h or 200℃±10℃ / 24h to release and eliminate the residual stress in the processing of the high-temperature resistant and high-precision quartz crystal oscillator. Let the product enter the stable period in advance, and then test it according to the requirements of the design parameters for standby use.

[0086] Step 5: Helium leak detection: Place the high-temperature resistant and high-precision quartz crystal oscillator in an anti-static gauze, put it in a pressurized tank, set 99.99% high-purity helium to pressurize for more than 2 hours, the pressure is 0.4-0.6MPa, and then put it into a helium mass spectrometer leak detector for helium leak detection. The helium leak detection is required to meet the leakage rate of no more than 5*10 -3 Pa.cm 3 / s standard, and then take it out for use;

[0087] Step 6: Temperature shock: Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray and put it into a temperature shock box. Set the low temperature to -65℃±3℃ and the high temperature to +200℃±3℃. Perform 10 cycles of shock to test the reliability, stability and durability of the product at different temperatures. Then, test it according to the design parameter requirements and keep it ready for use.

[0088] Step 7: Secondary reflow soldering: Place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the reflow soldering machine, set eight temperature zones to 180°C, 220°C, 300°C, 310°C, 330°C, 330°C, 330°C, 330°C, allowable temperature variation of ±10°C, transmission speed of 10min±10s, perform two consecutive high-temperature operation tests of reflow soldering, and then test it according to the requirements of the design parameters for standby use;

[0089] Step 8: Secondary accelerated aging: Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray, put it into an aging oven, set it to 125℃±10℃ / 72h or 200℃±10℃ / 24h, release and eliminate the residual stress in the processing of the high-temperature resistant and high-precision quartz crystal oscillator, let the product enter the stable period in advance, and then test it according to the requirements of the design parameters for standby;

[0090] Step 9: Normal temperature test: test according to the design parameters at a normal temperature of 25℃±3℃ and keep it ready for use;

[0091] Step 10: High and low temperature test: Place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the temperature measuring machine, set the temperature working range to -65℃~+200℃, test the electrical performance parameters of the product, and then take it out for use.

[0092] Through the above description, the manufacturing method of a high-temperature resistant and high-precision quartz crystal oscillator of the present invention solves the problem of the blank process manufacturing method of high-temperature resistant and high-precision quartz crystal oscillator products, can realize mass production, and has a high degree of automation. At the same time, the manufactured products can meet the requirements of a wide temperature range of -65°C to +200°C and a high temperature use environment, and realize a wide temperature working range and high-temperature resistance and high-precision frequency output functions, with good parameter consistency, and the cost is not increased compared to traditional quartz crystal oscillators.

[0093] The above embodiment is only one of the embodiments of the present invention, and is only used to help understand the method and core idea of ​​the present invention, and should not be used to limit the scope of protection of the present invention. Any changes or modifications without substantive significance, without departing from the idea and spirit of the present invention, which solve the technical problems consistent with the present invention, should be included in the scope of protection of the present invention.

Claims

1. A method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator, characterized in that: The following phases are included: Stage 1: Preparation of high temperature resistant quartz wafer (1) First, the quartz crystal block is ground and cut into long quartz crystal rods, then chamfered and cut into long quartz wafers according to AT cut type 36°±20′, and then ground and cut into quartz wafer originals, and high-temperature resistant quartz wafers (1) are obtained through grinding, high-temperature chemical washing, etching, etc., and are set aside; Stage 2: Fabrication of high temperature resistant quartz crystal oscillator (10) The high temperature resistant quartz wafer (1) is cleaned, arranged, cleaned again and coated to obtain a high temperature resistant quartz crystal oscillator (10) for standby use; Stage 3: Fabrication of high temperature resistant oscillator circuit (6) First, the chip (9) and the base (8) are fixedly bonded together by using a crystal bonding adhesive. After curing, the pins of the chip (9) are welded and connected to the conductive path (5) of the base (8) by using a gold wire to obtain a high temperature resistant oscillation circuit (6) containing the chip (9) and the base (8), which is then put into use. Phase 4: Open oscillator (7) electrical equipment First, a high temperature resistant quartz crystal oscillator (10) and a high temperature resistant oscillation circuit (6) are bonded together by means of a high temperature resistant conductive adhesive (12), and then cured to obtain an open oscillator (7) for standby use; Stage 5: Tuning and baking of the open oscillator (7) First, the open oscillator (7) is fine-tuned to obtain the required frequency, then baked at high temperature and taken out for use; Stage 6: Packaging and passivation of high-temperature resistant and high-precision quartz crystal oscillators First, the open oscillator (7) and the sealing cover sheet (11) are sealed and packaged together, and after printing, a high-temperature resistant and high-precision quartz crystal oscillator is obtained. Then, the high-temperature resistant and high-precision quartz crystal oscillator is passivated and re-passivated, including test items such as gross leak detection, reflow soldering, accelerated aging, helium leak detection, temperature shock, secondary reflow soldering, secondary accelerated aging, normal temperature test, high and low temperature test, etc., to obtain a qualified high-temperature resistant and high-precision quartz crystal oscillator.

2. The method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The production of the high temperature resistant quartz wafer (1) comprises the following steps, specifically: Step 1: Take a quartz crystal block raw material, grind the X and Z surfaces of the quartz crystal block and cut it into strips using a multi-wire saw to form a quartz crystal rod for later use; Step 2: Chamfer the four sides of the cut quartz crystal rod, check the X and Z surface angles and chamfer dimensions of the quartz crystal rod, and set aside; Step 3: Place the quartz crystal rod into a multi-wire saw, select the AT cutting angle, slice the wafer at 36°±20′ to form a long quartz wafer, detect the angle of the long quartz wafer, and set aside; Step 4: Grind the long quartz wafer through multiple passes with different sand numbers for thickness, grind the grit and wafer X surface size, cut and slice it using a multi-wire saw, and then grind the size of the Z surface of the original quartz wafer for standby use; Step 5: The quartz wafer original piece is washed with high temperature chemical, and then the quartz wafer original piece is subjected to frequency etching operation processing using a chemical agent (saturated solution of ammonium bifluoride), and then the final frequency sorting is performed to obtain a high-temperature resistant quartz wafer (1) for standby use. The obtained high-temperature resistant quartz wafer (1) is rectangular, with a length, width and thickness ratio greater than 10, and has a parallel upper surface and a lower surface. The high-temperature resistant quartz wafer (1) is provided with an error-proofing structure, including the length direction of the wafer as a first direction.

3. The method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The production of a high temperature resistant quartz crystal oscillator (10) comprises the following steps, specifically: Step 1: Place the high temperature resistant quartz wafer (1) in a cleaning basket, clean it in six steps using an ultrasonic cleaning machine and a special cleaning solution, and then put it into an oven at 150°C ± 10°C for 30 to 60 minutes for drying. After drying, set it aside for use; Step 2: Lay the cleaned high temperature resistant quartz wafer (1) flat on the tray of the automatic wafer arrangement machine, select the undamaged high temperature resistant quartz wafer (1) through the automatic wafer arrangement machine and transfer it to the coating fixture, and after the coating fixture is full, take it out and install the cover plate for standby use; Step 3: Place the coating fixture containing the high temperature resistant quartz wafer (1) in a cleaning basket, perform a second cleaning of six steps using a special cleaning solution of an ultrasonic cleaning machine, and then place it in an oven at 150°C ± 10°C for 30 to 60 minutes for drying, and set it aside for use after drying; Step 4: Place a coating fixture equipped with a high temperature resistant quartz wafer (1) into a coating machine, and form electrodes by plating chrome layers and silver electrode layers on the upper and lower surfaces of the high temperature resistant quartz wafer (1) to obtain a high temperature resistant quartz crystal oscillator (10) for use. The dimensions of the plated electrodes are made according to design requirements, and an upper surface coating electrode (2) and an auxiliary electrode (4) are formed on the upper surface of the high temperature resistant quartz wafer (1), and a lower surface coating electrode (3) and an auxiliary electrode (4) are formed on the lower surface. The upper surface coating electrode (2) and the lower surface coating electrode (3) are symmetrically distributed with respect to the midpoint on the upper surface and the lower surface, respectively, and are both rectangular structures.

4. The method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The production of the high temperature resistant oscillation circuit (6) comprises the following steps, specifically: Step 1: Place the chip (9) and the base (8) into an automatic glue dispensing machine respectively, adhere the bottom of the chip (9) to the groove of the base (8) with a solid crystal glue, and take it out for use; Step 2: Place the base (8) bonded with the chip (9) into an oven, set the temperature to 150°C ± 10°C, bake for 50 min ± 10 min to solidify the chip (9) on the base (8), and take it out for later use; Step 3: Place the base (8) bonded with the chip (9) into a bonding machine, set the preheating temperature of the bonding machine to 160°C ± 10°C, and weld the pins of the chip (9) to the conductive path (5) of the base (8) through gold wires to obtain a high-temperature resistant oscillation circuit (6) containing the chip (9) and the base (8), which is ready for use.

5. The method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The electrical installation of the open oscillator (7) comprises the following steps, specifically: Step 1: Place the high temperature resistant quartz crystal oscillator (10) and the high temperature resistant oscillation circuit (6) into an automatic film loading and dispensing machine respectively, adhere the high temperature resistant quartz crystal oscillator (10) to the high temperature resistant oscillation circuit (6) through the high temperature resistant conductive glue (12), and take them out for use; Step 2: Place the high temperature resistant oscillation circuit (6) bonded with the high temperature resistant quartz crystal oscillator (10) on the conveyor belt of the curing mesh belt furnace, set the first half to bake at 185℃±10℃ for more than 30 minutes, and the second half to bake at 270±10℃ for more than 30 minutes, fix the high temperature resistant quartz crystal oscillator (10) on the high temperature resistant oscillation circuit (6), obtain an open oscillator (7), and take it out for use.

6. The method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The frequency modulation and baking of the open oscillator (7) comprises the following steps, specifically: Step 1: Place the open oscillator (7) into a fine-tuning machine, use the ion etching frequency modulation method to fine-tune the frequency of the high-temperature resistant quartz crystal oscillator (10), and after fine-tuning, test it according to the requirements of the design parameters and set it aside; Step 2: Place the finely adjusted open oscillator (7) into a vacuum oven, set the temperature to 150°C ± 3°C, and vacuum bake for more than 24 hours, then take it out for later use.

7. The method for manufacturing a high-temperature resistant and high-precision quartz crystal oscillator according to claim 1, characterized in that: The packaging and passivation of high temperature resistant and high precision quartz crystal oscillator include the following steps, specifically: Step 1: Place the baked open oscillator (7) and the sealing cover sheet (11) into a sealing machine respectively, first perform vacuum baking on the open oscillator (7) at a temperature of 150°C ± 10°C for 50 to 90 minutes, then seal and package the sealing cover sheet (11) and the open oscillator (7) by high-frequency current parallel welding in a vacuum environment or a nitrogen-filled environment, take them out and print them, and obtain a high-temperature resistant and high-precision quartz crystal oscillator for standby use; Step 2: Rough leak detection: Use pressurized airtight test liquid to check the sealing of the high-temperature resistant and high-precision quartz crystal oscillator for rough leaks. No obvious bubbles are required to precipitate, and then take it out for use; Step 3: Reflow soldering, place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the reflow soldering machine, set eight temperature zones to 180℃, 220℃, 300℃, 310℃, 330℃, 330℃, 330℃, 330℃, allowable temperature variation of ±10℃, transmission speed of 10min±10s, conduct two consecutive high-temperature operation tests of reflow soldering, and then test it according to the requirements of design parameters for standby; Step 4: Accelerate aging. Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray and put it into an aging oven. Set the oven to 125℃±10℃ / 72h or 200℃±10℃ / 24h to release and eliminate the residual stress in the processing of the high-temperature resistant and high-precision quartz crystal oscillator. Let the product enter the stable period in advance, and then test it according to the requirements of the design parameters for standby use. Step 5: Helium leak detection: Place the high-temperature resistant and high-precision quartz crystal oscillator in an anti-static gauze, put it in a pressurized tank, set 99.99% high-purity helium to pressurize for more than 2 hours, the pressure is 0.4-0.6MPa, and then put it into a helium mass spectrometer leak detector for helium leak detection. The helium leak detection is required to meet the leakage rate of no more than 5*10 -3 pa.cm 3 / s standard, and then take it out for use; Step 6: Temperature shock: Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray and put it into a temperature shock box. Set the low temperature to -65℃±3℃ and the high temperature to +200℃±3℃. Perform 10 cycles of shock to test the reliability, stability and durability of the product at different temperatures. Then, test it according to the design parameter requirements and keep it ready for use. Step 7: Secondary reflow soldering: Place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the reflow soldering machine, set eight temperature zones to 180°C, 220°C, 300°C, 310°C, 330°C, 330°C, 330°C, 330°C, allowable temperature variation of ±10°C, transmission speed of 10min±10s, perform two consecutive high-temperature operation tests of reflow soldering, and then test it according to the requirements of the design parameters for standby use; Step 8: Secondary accelerated aging: Place the high-temperature resistant and high-precision quartz crystal oscillator on a tray, put it into an aging oven, set it to 125℃±10℃ / 72h or 200℃±10℃ / 24h, release and eliminate the residual stress in the processing of the high-temperature resistant and high-precision quartz crystal oscillator, let the product enter the stable period in advance, and then test it according to the requirements of the design parameters for standby; Step 9: Normal temperature test: test according to the design parameters at a normal temperature of 25℃±3℃ and keep it ready for use; Step 10: High and low temperature test: Place the high-temperature resistant and high-precision quartz crystal oscillator in a tray, put it into the temperature measuring machine, set the temperature working range to -65℃~+200℃, test the electrical performance parameters of the product, and then take it out for use.

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