Active gate drive circuit and method for adaptively controlling common-mode noise

Abstract

This invention discloses an active gate driver circuit and method for adaptive control of common-mode noise. The active gate driver circuit includes a high-side circuit, which comprises a common-mode noise sensing and amplification unit, a common-mode noise filtering module, an RS flip-flop, a high-side output module, and an auxiliary module. The high-side output module includes a MOSFET and a high-side control signal port. The auxiliary module includes a MOSFET and an auxiliary signal port. The auxiliary signal port is used to receive auxiliary current triggered by voltage changes in the high-side circuit. The common-mode noise sensing and amplification unit senses the common-mode current and the auxiliary current, adjusts the voltage change rate, and thus controls the common-mode noise. This invention can reduce the common-mode noise interference of the front-end and back-end of the driver circuit on the gate driver circuit, improving the safety and reliability of the circuit system.

Description

Technical Field

[0001] This invention belongs to the field of driver control technology, specifically the field of adaptive control gate-level drivers, and more specifically relates to an active gate driving circuit and method for adaptive control of common-mode noise. Background Technology

[0002] Most current drive circuits are relatively large. Common-mode or differential-mode electromagnetic interference transmitted from the front end of the drive circuit or the driven device (back end of the drive circuit) can be considered a minor impact under the overall economic constraints of the system. However, in a small number of compact or limited-size electromechanical systems where economic constraints are not a concern, the air and electrical isolation between the gate drive circuit and other high-voltage or strong-magnetic circuits in the system cannot block differential-mode or common-mode interference that is sufficient to cause harm. This will directly lead to insufficient guarantee of the control safety and reliability of the entire system. Under conditions where economic constraints are not a concern, it is highly likely to cause irreparable damage to high-value products.

[0003] In a practical, compact circuit system, the gate driver circuit may be affected by common-mode interference transmitted from the high-voltage circuit and electromagnetic interference coupled from multiple magnetic fields during system operation. Simultaneously, the semiconductor-based high-frequency response circuit driven by the driver circuit may also transmit common-mode interference to the driver circuit through the gate or gate. Therefore, certain safety hazards exist under these circumstances. When the high-voltage circuit operates at high frequencies, there is a certain probability that the gate driver circuit will malfunction, opening the subsequent semiconductor-based high-frequency response circuit. This may directly cause the system to malfunction under undesirable conditions. Prolonged malfunctions may even directly lead to system burnout or paralysis. In low-voltage or medium-voltage circuits, such malfunctions pose certain experimental risks to users or directly cause short circuits in the circuit system, resulting in unavoidable losses.

[0004] Traditional gate driver circuits typically use basic MOSFETs with impedance circuits for filtering. This choice is based on economic considerations, and the filtering effect is highly dependent on the selected MOSFET and impedance circuit. Furthermore, complex circuits are required to perform high-frequency and low-frequency filtering simultaneously. As the complexity of the impedance filtering circuit increases, the driving efficiency of the gate driver circuit itself also decreases, resulting in resource waste and increased driving power. Summary of the Invention

[0005] Technical Objective: To address the aforementioned technical problems, this invention proposes an active gate drive circuit and method for adaptive control of common-mode noise. This method can solve the problems of common-mode noise interference between the front and back ends of the drive circuit and the coupled electromagnetic interference caused by multiple magnetic fields in existing low-voltage and medium-voltage circuit systems. It eliminates the safety hazards of the overall circuit system and improves economic efficiency.

[0006] Technical solution: To achieve the above technical objectives, the present invention adopts the following technical solution:

[0007] An active gate drive circuit for adaptive control of common-mode noise includes a high-side circuit, wherein the high-side circuit includes a common-mode noise sensing and amplification unit, a common-mode noise filtering module, an RS flip-flop, a high-side output module, and an auxiliary module;

[0008] The common-mode noise sensing and amplification unit is used to sense the noise flowing into the high-side circuit and amplify it to output an amplified signal.

[0009] The common-mode noise filtering module is used to filter out noise signals in the amplified signal;

[0010] The input of the RS flip-flop is connected to the output of the common-mode noise filtering module;

[0011] The high-side output module includes a first MOS transistor, a second MOS transistor, a first high-side control signal port, and a second high-side control signal port. The gates of both the first and second MOS transistors are connected to the output terminals of RS flip-flops. The source of the first MOS transistor is connected to a high-potential power supply terminal, and its drain is connected to the first high-side control signal port. The source of the second MOS transistor is connected to a low-potential power supply terminal, and its drain is connected to the second high-side control signal port. The first and second high-side control signal ports are used to output drive signals.

[0012] The auxiliary module includes a fifth MOS transistor, a sixth MOS transistor, and an auxiliary signal port. The sources of the fifth and sixth MOS transistors are both connected to a low-potential power supply terminal. The gate and drain of the sixth MOS transistor are connected and connected to the input terminal of the common-mode noise sensing and amplification unit. The drain of the fifth MOS transistor is connected to the auxiliary signal port, which is used to receive the auxiliary current triggered by voltage changes in the high-side circuit.

[0013] Preferably, the high-side circuit further includes a first high-side resistor, a second high-side resistor, and an auxiliary resistor. The first end of the first high-side resistor is connected to a first high-side control signal port, the first end of the second high-side resistor is connected to a second high-side control signal port, the first end of the auxiliary resistor is connected to an auxiliary signal port, and the second ends of the first high-side resistor, the second high-side resistor, and the auxiliary resistor are connected together.

[0014] Preferably, the active gate driving circuit includes a peripheral circuit, which includes a high-voltage power supply and a high-side transistor. The collector of the high-side transistor is connected to the high-voltage power supply, and the base is connected to the second end of the first high-side resistor, the second high-side resistor, and the auxiliary resistor.

[0015] The high-side circuit is powered by a floating power supply, which includes a low-voltage power supply, a reference resistor, a Zener diode, and a floating capacitor connected in sequence. The positive terminal of the Zener diode is connected to the reference resistor, and the negative terminal is a high-potential power supply terminal and connected to the source of the first MOSFET. The first terminal of the floating capacitor is connected to the negative terminal of the Zener diode, and the second terminal is a low-potential power supply terminal and connected to the emitter of the high-side transistor.

[0016] The base voltage of the high-side transistor is the high-side gate voltage, and the voltage of the auxiliary signal port is the reference voltage.

[0017] Preferably, the common-mode noise sensing and amplification unit includes: a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a seventh MOS transistor, an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, a first resistor, a second resistor, a third resistor, and a fourth resistor;

[0018] The base of the first transistor is connected to the base of the second transistor, the emitter is connected to the reference voltage, and the collector is connected to the source of the seventh MOS transistor. The collector of the second transistor is connected to the reference voltage, and the emitter is connected to the emitter of the fifth transistor. The base of the third transistor is connected to the base of the fourth transistor, the emitter is connected to the reference voltage, and the collector is connected to the collector of the eighth transistor. The collector of the fourth transistor is connected to the reference voltage, and the emitter is connected to the drain of the eighth MOS transistor, thus forming a noise sensing circuit.

[0019] The base of the fifth transistor is connected to the base of the sixth transistor, and the collector is connected to the high-side gate voltage. The emitter of the sixth transistor and the collector of the seventh transistor are both connected to the high-side gate voltage. The collector of the sixth transistor and the emitter of the seventh transistor are connected. The emitter of the eighth transistor is connected to the high-side gate voltage, thus forming a noise amplifier circuit.

[0020] The first end of the first resistor is connected to the reference voltage, the second end is connected to the first end of the second resistor and the drain of the seventh MOSFET, and the second end of the second resistor is connected to the gate of the ninth MOSFET; the first end of the third resistor is connected to the reference voltage, the second end is connected to the first end of the fourth resistor and the source of the eighth MOSFET, and the second end of the fourth resistor is connected to the gate of the tenth MOSFET, thus forming a noise sensing sensitivity adjustment circuit.

[0021] The drain of the ninth MOSFET and the source of the tenth MOSFET are both connected to the reference voltage. The source of the ninth MOSFET is connected to the gate of the eighth MOSFET and the source of the eleventh MOSFET. The drain of the twentieth MOSFET is connected to the gate of the seventh MOSFET and the drain of the twelfth MOSFET. The drain of the eleventh MOSFET and the source of the twelfth MOSFET are both connected to the high-side gate voltage. The gate of the eleventh MOSFET is connected to the gate of the twelfth MOSFET, thus forming the control circuit of the sensitivity adjustment circuit.

[0022] Preferably, the first, seventh, eighth, and ninth MOSFETs are PMOS transistors; the second, fifth, sixth, eighth, seventh, and tenth MOSFETs are NMOS transistors.

[0023] The first, third, fifth, and seventh transistors are PNP transistors, while the second, fourth, sixth, eighth, and high-side transistors are NPN transistors.

[0024] Preferably, the active gate drive circuit further includes a low-side circuit and a ground terminal, wherein the low-side circuit includes a dead-time generator, a delay compensation module and a low-side output module connected in sequence.

[0025] The input terminal of the dead-time generator is connected to the output terminal of the common-mode noise sensing and amplification unit. The low-side drive stage module includes a third MOS transistor, a fourth MOS transistor, a first low-side control signal port, and a second low-side control signal port. The gates of the third MOS transistor and the fourth MOS transistor are both connected to the output terminal of the delay compensation module. The source of the third MOS transistor is connected to the low-voltage power supply, and the drain is connected to the first low-side control signal port. The source of the fourth MOS transistor is connected to the ground terminal, and the drain is connected to the second high-side control signal port. The first low-side control signal port and the second low-side control signal port are used to output drive signals.

[0026] Preferably, the low-side circuit further includes a first low-side resistor and a second low-side resistor, the first end of the first low-side resistor is connected to a first low-side control signal port, the first end of the second low-side resistor is connected to a second low-side control signal port, and the second ends of the first low-side resistor and the second low-side resistor are connected together.

[0027] Preferably, the peripheral circuit further includes a low-side transistor, the collector of which is connected to the emitter of the high-side transistor, the base of which is connected to the second end of the first low-side resistor and the second low-side resistor, and the emitter is grounded.

[0028] Preferably, the third MOS transistor is a PMOS transistor, the fourth MOS transistor is an NMOS transistor, and the low-side transistor is a high-voltage PNP transistor.

[0029] An active gate driving method, applied in the aforementioned active gate driving circuit, the method comprising the following common-mode noise sensing and filtering steps:

[0030] After the high-side circuit is working, the MOS transistor at the high-side output terminal floats to the voltage value of the low-voltage power supply at a voltage change rate of dV / dt in hard-switching mode. During the floating process, a common-mode current is generated.

[0031] The common-mode noise sensing and amplification circuit senses the common-mode current, amplifies the common-mode current, and sends it to the RS flip-flop. The RS flip-flop sends a trigger signal to the high-side output module, and the high-side output module outputs a drive signal.

[0032] The MOS transistor in the auxiliary module triggers the auxiliary port to generate an auxiliary current, and the magnitude of the auxiliary current is related to the rate of voltage change.

[0033] The common-mode noise sensing and amplification unit continuously senses the auxiliary current and adjusts the voltage change rate according to the magnitude of the sensed auxiliary current, thereby reducing the magnitude of the auxiliary current generated at the auxiliary port.

[0034] Beneficial effects: Due to the adoption of the above technical solution, the present invention has the following beneficial effects:

[0035] The active gate driver circuit proposed in this invention has adaptive common-mode noise sensing and common-mode noise filtering functions. Using this circuit for driving will greatly reduce the common-mode noise interference between the front and back ends of the driver circuit and the gate driver circuit in compact circuit systems, thereby improving the safety and reliability of the circuit system. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of an active gate drive circuit for adaptive control of common-mode noise proposed in this invention.

[0037] Figure 2 for Figure 1 Schematic diagram of the CM noise sensing and amplification unit in the circuit;

[0038] Among them, M1-first MOSFET, M2-second MOSFET, M3-third MOSFET, M4-fourth MOSFET, M5-fifth MOSFET, M6-sixth MOSFET, M7-seventh MOSFET, M8-eighth MOSFET, M9-ninth MOSFET, M10-tenth MOSFET, M11-eleventh MOSFET, and M12-twelfth MOSFET;

[0039] Q1 - First transistor, Q2 - Second transistor, Q3 - Third transistor, Q4 - Fourth transistor, Q5 - Fifth transistor, Q6 - Sixth transistor, Q7 - Seventh transistor, Q8 - Eighth transistor, Q9 - High-side transistor, Q10 - Low-side transistor;

[0040] R1 - First resistor, R2 - Second resistor, R3 - Third resistor, R4 - Fourth resistor, R5 - First high-side resistor, R6 - Second high-side resistor, R7 - Auxiliary resistor, R8 - First low-side resistor, R9 - Second low-side resistor, R10 - Reference resistor, R11 - Eleventh resistor; D1 - Zener diode. Detailed Implementation

[0041] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0042] This invention proposes an active gate driver circuit with adaptive common-mode noise sensing and common-mode noise filtering functions. The driver circuit structure is as follows: Figure 1 As shown, it includes high-side circuitry, low-side circuitry, and peripheral circuitry.

[0043] The high-side circuitry includes: a common-mode (CM) noise sensing and amplification unit, a CM noise filtering module, an RS flip-flop, and four MOSFETs (Metal Oxide Semiconductor Field Effect Transistors): M1, M2, M5, and M6. The CM noise sensing and amplification unit senses external noise and voltage dV / dt changes, amplifies them, and transmits them. The CM noise filtering module filters out noise signals from the amplified signal.

[0044] The low-side circuit consists of a fixed dead-time generator, a delay compensation module, and two MOSFETs: the third MOSFET M3 and the fourth MOSFET M4.

[0045] The external circuit consists of a Zener diode D1 (which stabilizes the MOSFET drive voltage in the saturation region), seven resistors (R5-R11), two power supplies (low-voltage and high-voltage), and two high-voltage transistors, Q9 and Q10. The low-voltage power supply provides power to the MOSFETs in the high-side and low-side circuits. Zener diode D1 provides stable 15V and 9V power supplies on top of the low-voltage power supply. The high-voltage power supply, M9, and M10 form the driven circuit. The seven external resistors are all ordinary resistors, serving to stabilize the circuit.

[0046] Specifically, the first MOSFET M1 and the second MOSFET M2 constitute a high-side output module. The high-side output module also includes a first high-side control signal port and a second high-side control signal port, which are used to output signals driving the high-side transistors. The fifth MOSFET M5 and the sixth MOSFET M6 constitute an auxiliary module, which also includes an auxiliary signal port. The third MOSFET M3 and the fourth MOSFET M4 constitute a low-side output module, which also includes a first low-side control signal port and a second low-side control signal port, which are used to output signals driving the low-side transistors.

[0047] like Figure 1 As shown, the first terminal of the first high-side resistor R5 is connected to the first high-side control signal port, the first terminal of the second high-side resistor R6 is connected to the second high-side control signal port, the first terminal of the auxiliary resistor R7 is connected to the auxiliary signal port, and the second terminals of the first high-side resistor R5, the second high-side resistor R6, and the auxiliary resistor R7 are connected together. The first terminal of the first low-side resistor R8 is connected to the first low-side control signal port, the first terminal of the second low-side resistor R9 is connected to the second low-side control signal port, and the second terminals of the first low-side resistor R8 and the second low-side resistor R9 are connected together.

[0048] The working principle of the high-side circuit in the active gate driver circuit designed in this invention is as follows:

[0049] When the MOS transistors M1 and M2 in the high-side circuit are turned on in the drive circuit, M1 and M2 usually float to the potential supplied by the low-voltage power supply at a high dV / dt voltage change rate in hard-switching mode.

[0050] The CM noise sensing and amplification unit in the high-side circuit can detect high dV / dt rates;

[0051] The sensed common-mode noise is processed by the filtering module and then fed back to M1 and M2 by the RS flip-flop. M1 and M2 output gate drive current I_g to the high-side control signal port. At the same time, M5 and M6 are activated, ultimately triggering the auxiliary current I_ref in the auxiliary signal port.

[0052] The auxiliary current I_ref is opposite to the gate drive current I_g, so the fast dV / dt rate can be adjusted.

[0053] The CM noise sensing and amplification unit will immediately detect the slowed dV / dt rate, and then reduce the auxiliary current I_ref. By sensing dV / dt, it reduces the common-mode noise generated by dV / dt. After repeating the adjustment several times, a dynamic balance is reached to complete all the functions of the high-side circuit of the drive circuit.

[0054] The low-side circuit operates on the same principle as the high-side circuit. When the CM noise sensing and amplification unit is in operation, the same signal is transmitted to the fixed dead-time generator in the low-side circuit. The signal is then applied to the half-bridge drive circuit composed of M3 and M4 through delay compensation, acting on the low-side transistor and cooperating with the high-side circuit to complete the entire switching action.

[0055] like Figure 2 The diagram shows the schematic of the CM noise sensing and amplification unit, including transistors Q1-Q7, MOSFETs M7-M12, and resistors R2-R4, which constitute the control circuit for noise amplification, sensing, and sensitivity adjustment. Q1-Q4 in the diagram are all transistors used to sense CM noise. Under normal circuit conditions... Figure 2 Points A and B are at high voltage levels, but when the high-side gate voltage rises, the sensed CM current flows through the remaining transistors. This lowers the voltage at points C and D, and then outputs a signal to control the I_ref auxiliary current. The transistors work together to complete the functions of the CM sensing and amplification unit. The sensitivity of the sensing unit can be changed by reducing the ratio of R2 / R1 or R4 / R3.

[0056] The circuit designed in this invention can filter common-mode interference signals to a certain extent, and will not cause additional area overhead or negligible control delay in a compact circuit. Compared with traditional drive circuits, this drive circuit will improve working efficiency and circuit safety and reliability.

[0057] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the above embodiments do not limit the present invention in any way, and all technical solutions obtained by equivalent substitution or equivalent transformation fall within the protection scope of the present invention.

Claims

1. An active gate driver circuit for adaptive control of common-mode noise, comprising a high-side circuit, characterized in that: The high-side circuit includes a common-mode noise sensing and amplification unit, a common-mode noise filtering module, an RS flip-flop, a high-side output module, and an auxiliary module; The common-mode noise sensing and amplification unit is used to sense the noise flowing into the high-side circuit and amplify it to output an amplified signal. The common-mode noise filtering module is used to filter out noise signals in the amplified signal; The input of the RS flip-flop is connected to the output of the common-mode noise filtering module; The high-side output module includes a first MOS transistor, a second MOS transistor, a first high-side control signal port, and a second high-side control signal port. The gates of both the first and second MOS transistors are connected to the output terminals of RS flip-flops. The source of the first MOS transistor is connected to a high-potential power supply terminal, and its drain is connected to the first high-side control signal port. The source of the second MOS transistor is connected to a low-potential power supply terminal, and its drain is connected to the second high-side control signal port. The first and second high-side control signal ports are used to output drive signals. The auxiliary module includes a fifth MOS transistor, a sixth MOS transistor, and an auxiliary signal port. The sources of the fifth and sixth MOS transistors are both connected to a low-potential power supply terminal. The gate and drain of the sixth MOS transistor are connected and connected to the input terminal of the common-mode noise sensing and amplification unit. The drain of the fifth MOS transistor is connected to the auxiliary signal port, which is used to receive the auxiliary current triggered by voltage changes in the high-side circuit. The high-side circuit further includes a first high-side resistor, a second high-side resistor, and an auxiliary resistor. The first end of the first high-side resistor is connected to the first high-side control signal port, the first end of the second high-side resistor is connected to the second high-side control signal port, the first end of the auxiliary resistor is connected to the auxiliary signal port, and the second ends of the first high-side resistor, the second high-side resistor, and the auxiliary resistor are connected together. The active gate driving circuit is provided with an external circuit, which includes a high-voltage power supply and a high-side transistor. The collector of the high-side transistor is connected to the high-voltage power supply, and the base is connected to the second end of the first high-side resistor, the second high-side resistor, and the auxiliary resistor. The high-side circuit is powered by a floating power supply, which includes a low-voltage power supply, a reference resistor, a Zener diode, and a floating capacitor connected in sequence. The positive terminal of the Zener diode is connected to the reference resistor, and the negative terminal is a high-potential power supply terminal and connected to the source of the first MOSFET. The first terminal of the floating capacitor is connected to the negative terminal of the Zener diode, and the second terminal is a low-potential power supply terminal and connected to the emitter of the high-side transistor. The base voltage of the high-side transistor is the high-side gate voltage, and the voltage of the auxiliary signal port is the reference voltage. The common-mode noise sensing and amplification unit includes: a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a seventh MOS transistor, an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, a first resistor, a second resistor, a third resistor, and a fourth resistor; The base of the first transistor is connected to the base of the second transistor, the emitter is connected to the reference voltage, and the collector is connected to the source of the seventh MOS transistor. The collector of the second transistor is connected to the reference voltage, and the emitter is connected to the emitter of the fifth transistor. The base of the third transistor is connected to the base of the fourth transistor, the emitter is connected to the reference voltage, and the collector is connected to the collector of the eighth transistor. The collector of the fourth transistor is connected to the reference voltage, and the emitter is connected to the drain of the eighth MOS transistor, thus forming a noise sensing circuit. The base of the fifth transistor is connected to the base of the sixth transistor, and the collector is connected to the high-side gate voltage. The emitter of the sixth transistor and the collector of the seventh transistor are both connected to the high-side gate voltage. The collector of the sixth transistor and the emitter of the seventh transistor are connected. The emitter of the eighth transistor is connected to the high-side gate voltage, thus forming a noise amplifier circuit. The first end of the first resistor is connected to the reference voltage, the second end is connected to the first end of the second resistor and the drain of the seventh MOSFET, and the second end of the second resistor is connected to the gate of the ninth MOSFET; the first end of the third resistor is connected to the reference voltage, the second end is connected to the first end of the fourth resistor and the source of the eighth MOSFET, and the second end of the fourth resistor is connected to the gate of the tenth MOSFET, thus forming a noise sensing sensitivity adjustment circuit. The drain of the ninth MOSFET and the source of the tenth MOSFET are both connected to the reference voltage. The source of the ninth MOSFET is connected to the gate of the eighth MOSFET and the source of the eleventh MOSFET. The drain of the twentieth MOSFET is connected to the gate of the seventh MOSFET and the drain of the twelfth MOSFET. The drain of the eleventh MOSFET and the source of the twelfth MOSFET are both connected to the high-side gate voltage. The gate of the eleventh MOSFET is connected to the gate of the twelfth MOSFET, thus forming the control circuit of the sensitivity adjustment circuit. The active gate drive circuit also includes a low-side circuit and a ground terminal. The low-side circuit includes a dead-time generator, a delay compensation module and a low-side output module connected in sequence. The input terminal of the dead-time generator is connected to the output terminal of the common-mode noise sensing and amplification unit. The low-side drive stage module includes a third MOS transistor, a fourth MOS transistor, a first low-side control signal port, and a second low-side control signal port. The gates of the third MOS transistor and the fourth MOS transistor are both connected to the output terminal of the delay compensation module. The source of the third MOS transistor is connected to the low-voltage power supply, and the drain is connected to the first low-side control signal port. The source of the fourth MOS transistor is connected to the ground terminal, and the drain is connected to the second high-side control signal port. The first low-side control signal port and the second low-side control signal port are used to output drive signals.

2. The active gate driver circuit for adaptive control of common-mode noise according to claim 1, characterized in that: The first, seventh, eighth, and ninth MOSFETs are PMOS transistors; the second, fifth, sixth, eighth, seventh, and tenth MOSFETs are NMOS transistors. The first, third, fifth, and seventh transistors are PNP transistors, while the second, fourth, sixth, eighth, and high-side transistors are NPN transistors.

3. The active gate driver circuit for adaptive control of common-mode noise according to claim 1, characterized in that: The low-side circuit also includes a first low-side resistor and a second low-side resistor. The first end of the first low-side resistor is connected to a first low-side control signal port, the first end of the second low-side resistor is connected to a second low-side control signal port, and the second ends of the first low-side resistor and the second low-side resistor are connected together.

4. The active gate driver circuit for adaptive control of common-mode noise according to claim 3, characterized in that: The peripheral circuit also includes a low-side transistor, the collector of which is connected to the emitter of the high-side transistor, the base of which is connected to the second end of the first low-side resistor and the second low-side resistor, and the emitter is grounded.

5. The active gate driver circuit for adaptive control of common-mode noise according to claim 4, characterized in that: The third MOS transistor is a PMOS transistor, the fourth MOS transistor is an NMOS transistor, and the low-side transistor is a PNP transistor.

6. An active gate driving method, characterized in that: When applied to the active gate drive circuit according to any one of claims 1-5, the method includes the following common-mode noise sensing and filtering steps: After the high-side circuit is working, the MOS transistor at the high-side output terminal floats to the voltage value of the low-voltage power supply at a voltage change rate of dV / dt in hard-switching mode. During the floating process, a common-mode current is generated. The common-mode noise sensing and amplification circuit senses the common-mode current, amplifies the common-mode current, and sends it to the RS flip-flop. The RS flip-flop sends a trigger signal to the high-side output module, and the high-side output module outputs a drive signal. The MOS transistor in the auxiliary module triggers the auxiliary port to generate an auxiliary current, and the magnitude of the auxiliary current is related to the rate of voltage change. The common-mode noise sensing and amplification unit continuously senses the auxiliary current and adjusts the voltage change rate according to the magnitude of the sensed auxiliary current, thereby reducing the magnitude of the auxiliary current generated at the auxiliary port.

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