Multi-channel large-bandwidth surface-mounted microwave transceiving assembly

Abstract

According to the multichannel large-bandwidth surface-mounted microwave transceiving assembly, the working frequency band is 0.1-6 GHz, the channel gain is as high as 44 dB, and P-1 is 9 dBm. Comprising an HTCC substrate, a metal ring frame, a cover plate, a radio frequency switch chip, a power supply control chip, a low noise amplifier chip and a numerical control attenuator chip. A plurality of concave surfaces are designed on the upper surface of the HTCC substrate, radio frequency chips are assembled by adopting a microsystem integration process technology, meanwhile, radio frequency channels and power supply nodes are arranged on the upper surface, and electromagnetic signals are isolated among the chips of the low-noise amplifier by adopting partition walls. The assembly further comprises four radio frequency ports (radio frequency signal input / output ends) and two receiving coupling ports (radio frequency signal coupling ends), wherein the radio frequency ports can be used as input or output ports. According to the invention, a multi-channel integrated symmetrical structure is adopted, and the whole assembly adopts the HTCC ceramic tube shell, so that the use of metal materials is greatly reduced, the internal space of the tube shell is fully utilized, and the effects of miniaturization, integration and light weight are achieved.

Description

Technical Field

[0001] The invention relates to a multi-channel large-bandwidth surface-mount microwave transceiver component, belonging to the field of microwave components. Background Art

[0002] As a key module, microwave transceiver components have been widely used in modern communication and radar systems. In radio frequency systems, the performance of microwave transceiver components directly determines the performance of the entire machine. The development of communication and radar technology has placed higher and higher requirements on microwave transceiver components, which are reflected in miniaturization, lightweight, high reliability, easy maintenance, wide application range, and batch production. This development requirement brings many difficulties to the design and production of transceiver components. The miniaturization of transceiver components makes the electromagnetic compatibility requirements inside the components higher, which greatly increases the difficulty of design; lightweight requires minimizing the use of metal materials in the entire component, which will create new heat dissipation problems. In order to make the components widely applicable, the transceiver components need to work within the ultra-wideband, while maintaining a fixed universal product packaging shape, which adds a new challenge to the design work, especially based on the HTCC broadband radio frequency vertical interconnection structure. Traditional microwave transceiver components based on metal packaging are increasingly difficult to meet the development needs of modern communications and radars. Summary of the invention

[0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and meet the requirements of miniaturization, lightness, high reliability, easy maintenance, wide application range, electromagnetic compatibility and heat dissipation of microwave transceiver components.

[0004] The purpose of the present invention is achieved through the following technical solutions:

[0005] A multi-channel, large-bandwidth surface-mount microwave transceiver component has an operating frequency band of 0.1 to 6 GHz, a channel gain of up to 44 dB, and a P-1 of 9 dBm. It includes an HTCC substrate, a metal ring frame, a cover plate, a radio frequency switch chip, a power control chip, a low-noise amplifier chip, and a digitally controlled attenuator chip; a number of concave surfaces are designed on the upper surface of the HTCC substrate, and the radio frequency chip is assembled using microsystem integration process technology. At the same time, radio frequency channels and power supply nodes are set on the upper surface, and partition walls are used between the low-noise amplifier chips to isolate electromagnetic signals. The component also includes 4 radio frequency ports (i.e., radio frequency signal input / output ports) and 2 receiving coupling ports (radio frequency signal coupling ports), and the radio frequency ports can be used as input or output ports. The present invention adopts a multi-channel integrated symmetrical structure, and the entire component adopts an HTCC ceramic tube shell, which greatly reduces the use of metal materials and makes full use of the internal space of the tube shell to achieve miniaturization, integration, and lightweight effects.

[0006] There are several specially designed concave surfaces on the HTCC substrate, and RF microstrip lines are left between the concave surfaces for the transmission of RF signals. There are partitions between the low-noise amplifier chips, and the partitions are made of the same material as the metal ring frame. The multi-channel, large-bandwidth surface-mount microwave transceiver component has a total of 6 RF ports, including 4 RF signal input / output ports, 2 RF signal coupling ports, and 9 power control ports for component signal control.

[0007] The substrate microwave transmission lines, vertical interconnect structure input and output impedance matching lines and all internal pad plating are made of thick gold layer that meets the national military standard, which is convenient for module assembly based on micro-assembly process. The 294 BGA surface mount pads at the bottom of the HTCC substrate are all made of thin gold layer, which is convenient for solder ball assembly based on electrical assembly process.

[0008] The packaged inductor is replaced by a silicon-based inductor, and the chips used are electrically connected by gold wire bonding.

[0009] Compared with the prior art, the present invention has the following beneficial effects:

[0010] (1) The present invention adopts a multi-channel integrated architecture, which reduces the use of metal materials, optimizes the electromagnetic environment, reduces the difficulty of the assembly process, and fully utilizes the space inside the device to achieve the effect of miniaturization and lightweight.

[0011] (2) In the design of the transmitting and receiving branches of the present invention, the electrical lengths between the radio frequency transmission channels are consistent to ensure insertion loss and phase consistency.

[0012] (3) The present invention keeps the depth of the concave surface consistent with the height of the chip during design, so that the chip and the microstrip transmission line are located on the same plane, reducing line loss and process difficulty.

[0013] (4) The present invention takes broadband usage scenarios into consideration when designing the transceiver components, performs simulation analysis on the RF channel when designing the RF link, and designs a matching microstrip line for broadband use.

[0014] (5) The present invention uses silicon-based RF inductors to replace broadband package inductors, which reduces the space components used and the weight of the components and improves the integration level. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is an overall structural diagram of the transceiver assembly (without cover) provided by the present invention.

[0016] Figure 2 This is a structural diagram of the cover plate provided by the present invention.

[0017] Figure 3 A schematic diagram of the radio frequency channel of the transceiver component provided by the present invention.

[0018] Figure 4 This is a principle block diagram of the radio frequency channel of the transceiver component provided by the present invention.

[0019] Figure 5 This is a single-channel gain performance diagram of the actual measured product of the transceiver component provided by the present invention.

[0020] Figure 6 This is a schematic diagram of the bottom BGA interface of the transceiver component provided by the present invention.

[0021] Figure 7 The invention is designed for a HTCC-based RF broadband matching vertical interconnection structure.

[0022] Figure 8 The silicon-based radio frequency inductor structure designed for the present invention is used to replace the schematic diagram of the package inductor.

[0023] Figure numerals: 101-HTCC substrate; 102-concave surface; 103-metal ring frame; 104-microwave transmission line; 105-vertical interconnection structure input and output impedance matching line; 106-cover plate; 107-common branch; 108-coupled signal output terminal; 201-RF switch chip; 202-power control chip; 203-low noise amplifier chip; 204-digital control attenuator chip; 302-power / control port; 301-RF signal input / output terminal; 303-RF signal coupling terminal. DETAILED DESCRIPTION

[0024] To make the objectives, technical solutions and advantages of the present invention more clear, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0025] like Figure 1 , Figure 2 as well as Figure 4 As shown, a multi-channel large bandwidth surface-mount microwave transceiver assembly includes an HTCC substrate 101, a metal ring frame 103, a cover plate 106, a radio frequency switch chip 201, a power control chip 202, a low noise amplifier chip 203, a digitally controlled attenuator chip 204, a power / control port 302 of the transceiver assembly, a radio frequency signal input / output terminal 301, and a radio frequency signal coupling terminal 303. The metal ring frame 103 is fixed to the surface of the HTCC substrate 101, and the radio frequency switch chip 201, the power control chip 202, the low noise amplifier chip 203, and the digitally controlled attenuator chip 204 are bonded by conductive adhesive. The cover plate 106 is fixed above the metal ring frame 103, and the cover plate 106 can be sealed with the metal ring frame 103 by parallel seam welding.

[0026] like Figure 1As shown, the upper surface of the HTCC substrate 101 is provided with a plurality of concave surfaces 102, and microwave transmission lines 104 are provided between the concave surfaces 102 and the concave surfaces 102. The concave surfaces 102 are used to place chips, and the depth of the concave surfaces is specially designed to be the same as the height of the chip, so that the chip surface can be flush with the RF path, which is conducive to signal transmission. The upper surface of the HTCC substrate 101 is provided with a vertical interconnection structure input and output impedance matching line 105, which is used for matching transmission of broadband RF signals; the metal ring frame 103 is designed with a metal partition wall to electromagnetically isolate the amplifier chip in the channel to prevent self-excitation. The metal ring frame 103 is made of kovar material, and its upper and lower surfaces and side surfaces are all provided with metal film layers.

[0027] The concave surfaces 102 are symmetrically distributed on the left and right sides. A common branch 107 is provided in the middle of the upper surface of the HTCC substrate 101 as a common transmission channel for the left and right sides. A digitally controlled attenuator chip 204 is installed at the common branch 107. The four RF signal input / output terminals 301 and the common branch 107 together constitute eight RF signal transmission channels. The symmetrical design + common branch method makes the electrical length of each RF channel equal, which is conducive to the consistency of insertion loss between product channels and miniaturization.

[0028] The surface of the metal ring frame 103 is a metal film layer, which can be equivalent to a PEC ideal electrical boundary during signal transmission, forming electromagnetic isolation for the low-noise amplifier chip 203, and at the same time supporting the cover plate 106, reducing the use of metal materials and facilitating the lightweight of the product.

[0029] like Figure 3 As shown, the multi-channel large bandwidth surface-mount microwave transceiver assembly can realize bidirectional transmission and reception, and the RF switch chip 201, the power control chip 202, the low noise amplifier chip 203, and the digital attenuator chip 204 are electrically connected between the chips and between the chip and the microwave transmission line 104 by gold wire bonding.

[0030] like Figure 6 As shown, a BGA surface mount pad is provided at the bottom of the HTCC substrate 101, which effectively reduces the device package size and is conducive to the miniaturization and mass production of the product. The power / control port 302, the RF signal input / output terminal 301, and the RF signal coupling terminal 303 of the transceiver component are all located on the BGA surface mount pad. The RF signal coupling terminal 303 is electrically connected to the RF coupling signal output terminal 108 provided on the upper surface of the HTCC substrate 101, and the RF signal transmission path is equal to the electrical length of the microwave transmission line. The RF coupling signal output terminal 108 is used to couple and output the RF signal between the RF switch chip 201 and the low noise amplifier chip 203.

[0031] The RF port 301 located on the bottom BGA ball pad is connected to the chip on the surface of the HTCC substrate 101 through the vertical interconnection structure input and output impedance matching line 105. The external RF signal passes through the RF signal input / output terminal 301, through the vertical interconnection structure input and output impedance matching line 105, through the substrate through gold wire bonding and then interconnected with the RF switch chip 201, achieving the function of RF signal and internal interconnection. The external power supply and control signal pass through the HTCC substrate 101 through the power / control port 302 of the transceiver component, and then interconnected with the RF switch chip 201, the power control chip 202, the low noise amplifier chip 203, and the digital control attenuator chip 204 through gold wire bonding, achieving the function of power supply and control signal and internal interconnection.

[0032] like Figure 7 As shown, a vertical interconnection structure input / output impedance matching line 105 is simulated and designed in a quasi-coaxial manner between the RF signal input / output terminal 301 of the component and the RF switch chip 201 to achieve broadband impedance matching, thereby achieving the purpose of broadband transmission and reception.

[0033] like Figure 8 As shown, the power supply current package inductor of the low noise amplifier chip 203 is replaced with a silicon-based inductor, and the volume is reduced from 1.8mm*1.8mm*6.8mm to 1.6mm*1.4mm*0.65mm, achieving the functions of lightweight and miniaturization.

[0034] The transceiver components of the present invention can be stacked and combined according to the required number of channels and transceiver conditions. By tiling the transceiver components, other forms of dot matrix arrangements can be formed to achieve combined applications of more channels.

[0035] In order to achieve lightweight, non-metallic materials such as ceramics are used to replace metal materials with high thermal conductivity and high specific volume. At the same time, in order to achieve low insertion loss performance of RF signals, HTCC technology is selected for tube and shell processing.

[0036] The present invention adopts a multi-channel integrated architecture, reduces the usage of metal materials, fully utilizes the space inside the transceiver component, and achieves the effect of miniaturization and lightness.

[0037] The contents not described in detail in the specification of the present invention belong to the common knowledge of those skilled in the art.

[0038] Although the present invention has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art may make possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.

Claims

1. A multi-channel, high-bandwidth surface-mount microwave transceiver assembly, characterized in that: It includes an HTCC substrate (101), a metal ring frame (103), a cover plate (106), a radio frequency switch chip (201), a power control chip (202), a low noise amplifier chip (203), a digitally controlled attenuator chip (204), a power / control port (302) of a transceiver component, a radio frequency signal input / output terminal (301), and a radio frequency signal coupling terminal (303); A metal ring frame (103) is fixedly connected to the surface of the HTCC substrate (101), and a cover plate (106) is fixedly connected to the top of the metal ring frame (103); the metal ring frame (103) is designed with a metal partition wall to perform electromagnetic isolation on the low noise amplifier chips (203) on both sides of the metal partition wall; A microwave transmission line (104), a vertical interconnection structure input and output end impedance matching line (105) and a plurality of concave surfaces (102) are arranged on the HTCC substrate (101); the microwave transmission line (104) is used for radio frequency signal transmission; the plurality of concave surfaces (102) are symmetrically distributed on the left and right sides; the concave surfaces (102) are used for placing a radio frequency switch chip (201), a power supply control chip (202) and a low noise amplifier chip (203); a common branch (107) is arranged in the middle of the upper surface of the HTCC substrate (101) as a common transmission channel for the left and right sides; a digitally controlled attenuator chip (204) is mounted on the common branch (107); A plurality of BGA surface-mount pads are arranged at the bottom of the HTCC substrate (101); a power supply / control port (302), a radio frequency signal input / output terminal (301), and a radio frequency signal coupling terminal (303) are all located on the BGA surface-mount pads; the radio frequency signal coupling terminal (303) is electrically connected to a radio frequency coupling signal output terminal (108) arranged on the upper surface of the HTCC substrate (101); and the radio frequency coupling signal output terminal (108) is used to couple and output the radio frequency signal between the radio frequency switch chip (201) and the low noise amplifier chip (203); The external radio frequency signal is connected to the radio frequency switch chip (201) through the radio frequency signal input / output terminal (301) and the impedance matching line (105) of the vertical interconnection structure input and output terminal, thereby achieving the function of radio frequency signal and internal interconnection; the external power supply and control signal pass through the HTCC substrate (101) through the power supply / control port (302) of the transceiver component, and are connected to the radio frequency switch chip (201), the power control chip (202), the low noise amplifier chip (203), and the digital control attenuator chip (204), thereby achieving the function of power supply and control signal and internal interconnection.

2. The multi-channel, high-bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The partition wall and the metal ring frame (103) are made of the same material.

3. The multi-channel, high-bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The depth of the concave surface (102) is the same as the height of the corresponding chip, so that the surface of the corresponding chip is flush with the radio frequency path, which is beneficial to signal transmission.

4. The multi-channel, high-bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The metal ring frame (103) is made of calcite material, and has metal film layers on the upper and lower surfaces and the side surfaces.

5. The multi-channel, large bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The power supply current package inductor of the low noise amplifier chip (203) is a silicon-based inductor.

6. The multi-channel, large bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The four radio frequency signal input / output terminals (301) and the common branch (107) together form eight radio frequency signal transmission channels.

7. The multi-channel, large bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The radio frequency switch chip (201), the power control chip (202), the low noise amplifier chip (203), and the digital controlled attenuator chip (204) are electrically connected to each other and to the microwave transmission line (104) by gold wire bonding.

8. The multi-channel, high-bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The impedance matching lines (105) at the input and output ends of the vertical interconnection structure adopt a quasi-coaxial method to achieve broadband impedance matching.

9. The multi-channel, large bandwidth surface-mount microwave transceiver assembly according to claim 1, characterized in that: The multi-channel, large-bandwidth surface-mount microwave transceiver assembly operates in the frequency band of 0.1 to 6 GHz, and the channel gain can reach 44 dB.

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