Nitride structure and semiconductor device

Abstract

The invention provides a nitride structure and a semiconductor device, the characteristics of which are improved. According to one embodiment, a nitride structure includes a base body, a nitride member, and a semiconductor member containing Ga and N. The nitride member is provided between the substrate and the semiconductor member in the first direction. The nitride member includes a first nitride region, a second nitride region, and a third nitride region. The first nitride region is provided between the substrate and the third nitride region. The second nitride region is provided between the first nitride region and the third nitride region. The first nitride region contains AlN. The second nitride region contains an Alx2Ga1-x2N (0 lt; x2lt; x2lt; 1). The third nitride region contains an Alx3Ga1-x3N (0lt; x3 < = 1, x2lt; x3). A second thickness of the second nitride region along the first direction is thinner than a third thickness of the third nitride region along the first direction.

Description

This application is based on Japanese Patent Application No. 2023-172068 (filing date: October 3, 2023) and claims the priority of this application. This application incorporates the entire contents of this application by reference. Technical Field

[0001] Embodiments of the present invention relate to a nitride structure and a semiconductor device. Background Art

[0002] For example, in a semiconductor device based on a nitride structure, improvement in characteristics is expected. Summary of the Invention Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a nitride structure and a semiconductor device capable of improving characteristics. Means for Solving the Problems

[0005] According to an embodiment of the present invention, a nitride structure includes a substrate, a nitride member, and a semiconductor member containing Ga and N. The nitride member is disposed between the substrate and the semiconductor member in a first direction. The nitride member includes a first nitride region, a second nitride region, and a third nitride region. The first nitride region is disposed between the substrate and the third nitride region. The second nitride region is disposed between the first nitride region and the third nitride region. The first nitride region contains AlN. The second nitride region contains Al x2 Ga 1-x2 N (0 < x2 < 1). The third nitride region contains Al x3 Ga 1-x3 N (0 < x3 ≤ 1, x2 < x3). The second thickness of the second nitride region in the first direction is thinner than the third thickness of the third nitride region in the first direction. Advantages of the Invention According to the nitride structure configured as described above, a nitride structure and a semiconductor device capable of improving characteristics can be provided. Brief Description of the Drawings Figure 1 It is a schematic cross-sectional view illustrating the nitride structure of the first embodiment. Figure 2 It is a schematic cross-sectional view illustrating the nitride structure of the first embodiment. Figure 3 It is a schematic cross-sectional view illustrating the nitride structure of the first embodiment. Figure 4 It is a schematic cross-sectional view illustrating the semiconductor device of the second embodiment. Figure 5This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.

[0082] Description of Reference Numerals 10, 20, 30: 1st, 2nd, 3rd semiconductor regions, 10M: semiconductor component, 10a-10e: 1st-5th partial regions, 20f, 20g: 6th, 7th partial regions, 41: insulating component, 41p: 1st insulating region, 51-53: 1st-3rd electrodes, 60M: nitride component, 61-64: 1st-4th nitride regions, 61s: substrate, 64a, 64b: 1st, 2nd film, 64p, 64q: 1st, 2nd region, 110-112: nitride structure, 120, 121: semiconductor device, D1-D3: 1st-3rd directions, t1-t4: 1st-4th thickness, ta, tb: 1st, 2nd film thickness DETAILED DESCRIPTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual. Even when representing the same part, it can be represented by different sizes and ratios according to different drawings. In the present specification and drawings, regarding the drawings that have already appeared, the same elements as those described above are denoted by the same reference numerals, and their detailed description is appropriately omitted.

[0008] (First embodiment) Figure 1 This is a schematic cross-sectional view illustrating the nitride structure according to the first embodiment. like Figure 1 As shown, the nitride structure 110 of the embodiment includes a substrate 61s, a nitride component 60M, and a semiconductor component 10M. The semiconductor component 10M includes Ga and N. The semiconductor component 10M may include at least one of GaN and AlGaN.

[0009] The nitride component 60M is provided between the substrate 61s and the semiconductor component 10M in the first direction D1. The first direction D1 is defined as the Z-axis direction. The direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.

[0010] The nitride component 60M is in a layered shape along the XY plane. The semiconductor component 10M is in a layered shape along the XY plane.

[0011] The nitride component 60M includes a first nitride region 61, a second nitride region 62, and a third nitride region 63. The first nitride region 61 is disposed between the substrate 61s and the third nitride region 63. The second nitride region 62 is disposed between the first nitride region 61 and the third nitride region 63. The first nitride region 61, the second nitride region 62, and the third nitride region 63 are layered along the X-Y plane.

[0012] The first nitride region 61 contains AlN. The second nitride region 62 contains Al x2 Ga 1-x2 N (0 < x2 < 1). The third nitride region 63 contains Al x3 Ga 1-x3 N (0 < x3 ≤ 1, x2 < x3). In one example, the composition ratio x2 is 0.15 or more and less than 0.7. The composition ratio x3 is 0.7 or more and 1 or less.

[0013] As Figure 1 shown, the thickness of the second nitride region 62 along the first direction D1 is defined as the second thickness t2. The thickness of the third nitride region 63 along the first direction D1 is defined as the third thickness t3. In the embodiment, the second thickness t2 is thinner than the third thickness t3.

[0014] The nitride structure 110 is, for example, a nitride wafer. As will be described later, at least a part of the nitride structure 110 may be included in a semiconductor device. The semiconductor device may be, for example, a transistor or the like. For example, the semiconductor component 10M functions as a functional layer in the semiconductor device. In a semiconductor device based on the nitride structure 110, leakage current sometimes occurs. For example, the breakdown voltage is reduced due to the leakage current.

[0015] In the embodiment, the above-described second nitride region 62 and third nitride region 63 are provided. Thereby, leakage current can be suppressed. Thereby, a high breakdown voltage can be obtained. For example, by providing the above-described second nitride region 62 and third nitride region 63, for example, the movement of carriers from the substrate 61s to the semiconductor component 10M can be suppressed. It is considered that the leakage current can be suppressed thereby. The second nitride region 62 and the third nitride region 63 are considered to function as carrier blocking layers, for example. According to the embodiment, a nitride structure capable of improving characteristics can be provided.

[0016] In the embodiment, the Al composition ratio in the second nitride region 62 is lower than the Al composition ratio in the third nitride region 63. For example, the second nitride region 62 functions as a well layer. The third nitride region 63 functions as a blocking layer. In the embodiment, the third thickness t3 of the third nitride region 63 is greater than the second thickness t2 of the second nitride region 62. Thereby, the migration of carriers can be effectively suppressed. The carriers are, for example, electrons or the like.

[0017] The base 61s includes silicon, for example. The base 61s may be a silicon substrate, for example. The nitride component 60M is, for example, a crystal. The semiconductor component 10M is, for example, a crystal.

[0018] like Figure 1 As shown, the first nitride region 61 may be in contact with the substrate 61s. The second nitride region 62 may be in contact with the first nitride region 61. The third nitride region 63 may be in contact with the second nitride region 62.

[0019] By providing the first nitride region 61 of AlN, for example, it is possible to suppress the substrate 61 s from being degraded (eg, melt-back etching).

[0020] like Figure 1 As shown, the thickness of the first nitride region 61 along the first direction D1 is set to a first thickness t1. In one example, the first thickness may be greater than 100 nm and less than 300 nm. By setting the first thickness to be greater than 100 nm, for example, the deterioration of the substrate 61s can be effectively suppressed. By setting the first thickness to be less than 300 nm, for example, the warping of the wafer can be suppressed.

[0021] In the embodiment, for example, the second thickness t2 may be thinner than the first thickness t1. For example, the third thickness t3 may be thicker than the first thickness t1. With such a relationship in thickness, for example, it is easy to suppress the warping of the wafer.

[0022] In the embodiment, for example, the second thickness t2 is preferably greater than or equal to 10 nm and less than 100 nm. When the second thickness t2 is greater than or equal to 10 nm, for example, it is difficult for carriers to form a channel. When the second thickness t2 is less than 100 nm, for example, it is easy to confine carriers.

[0023] The third thickness t3 is preferably, for example, not less than 100 nm and not more than 300 nm. When the third thickness t3 is not less than 100 nm, carriers are easily and effectively confined in the second nitride region 62. When the third thickness t3 is not more than 300 nm, for example, cracks are less likely to occur.

[0024] In one example, the first nitride region 61 does not contain carbon. Alternatively, the carbon concentration in the first nitride region 61 is lower than the carbon concentration in the second nitride region 62. By making the carbon concentration in the second nitride region 62 higher, for example, leakage current from the substrate 61s can be easily suppressed.

[0025] In an embodiment, the Al composition ratio in the second nitride region 62 may be substantially constant. The Al composition ratio in the third nitride region 63 may be substantially constant. For example, the Al composition ratio changes in a step-like manner between the first nitride region 61 and the second nitride region 62. For example, the Al composition ratio changes in a step-like manner between the second nitride region 62 and the third nitride region 63. The migration of carriers is effectively prevented.

[0026] The second nitride region 62 and the third nitride region 63 may be included in one group. A plurality of groups may be provided along the first direction D1. The number of the plurality of groups may be 1 or more and 3 or less. By providing a plurality of groups, the migration of carriers can be more effectively suppressed. The leakage current can be more effectively suppressed.

[0027] like Figure 1 As shown, the nitride component 60M may further include a fourth nitride region 64. The fourth nitride region 64 contains Al, Ga, and N. The fourth nitride region 64 is provided between the third nitride region 63 and the semiconductor component 10M.

[0028] In one example, the composition ratio of Al in the fourth nitride region 64 may vary. Figure 1 As shown, for example, the fourth nitride region 64 includes a first region 64p and a second region 64q. The second region 64q is provided between the first region 64p and the semiconductor component 10M. The Al composition ratio in the second region 64q is lower than the Al composition ratio in the first region 64p.

[0029] The Al composition ratio in the first region 64p is, for example, 0.6 or more and less than 1. The Al composition ratio in the second region 64q is, for example, 0.05 or more and 0.2 or less. The first region 64p may be in contact with the third nitride region 63. The second region 64q may be in contact with the semiconductor component 10M, for example.

[0030] For example, the Al composition ratio in the fourth nitride region 64 may decrease in the direction from the third nitride region 63 toward the semiconductor component 10M. The fourth nitride region 64 may be, for example, an inclined layer related to the Al composition ratio. By providing the fourth nitride region 64 as an inclined layer, for example, stress caused by a difference in the lattice constant of the crystal is easily alleviated. For example, warping or cracking is suppressed.

[0031] The fourth nitride region 64 may be in contact with the third nitride region 63. The fourth nitride region 64 may be in contact with the semiconductor component 10M.

[0032] like Figure 1 As shown, the thickness of the fourth nitride region 64 along the first direction D1 is set to a fourth thickness t4. The fourth thickness t4 may be, for example, not less than 1 μm and not more than 5 μm.

[0033] As Figure 1 shown, in this example, the semiconductor component 10M includes a first semiconductor region 10 and a second semiconductor region 20. The first semiconductor region 10 is disposed between the nitride component 60M and the second semiconductor region 20. The first semiconductor region 10 contains Al z1 Ga 1-z1 N (0 ≤ z1 < 1). The first semiconductor region 10 contains, for example, GaN. The second semiconductor region contains Al z2 Ga 1-z2 N (z1 < z2 < 1). The second semiconductor region 20 contains, for example, AlGaN. The composition ratio z1 is, for example, 0 or more and 0.13 or less. The composition ratio z2 is, for example, 0.15 or more and 0.35 or less.

[0034] Figure 2 is a schematic cross-sectional view illustrating the nitride structure of the first embodiment. As Figure 2 shown, in the nitride structure 111 of the embodiment, the constitution of the fourth nitride region 64 is different from the constitution of the fourth nitride region 64 in the nitride structure 110. Except for this, the constitution of the nitride structure 111 can be the same as the constitution of the nitride structure 110.

[0035] As Figure 2 shown, in the nitride structure 111, the fourth nitride region 64 includes a plurality of first films 64a and a plurality of second films 64b. One of the plurality of first films 64a is disposed between one of the plurality of second films 64b and another of the plurality of second films 64b. One of the plurality of second films 64b is disposed between one of the plurality of first films 64a and another of the plurality of first films 64a. For example, the first film 64a and the second film 64b are alternately disposed.

[0036] For example, the Al composition ratio in the plurality of first films 64a is higher than the Al composition ratio in the plurality of second films 64b. In the nitride structure 111, the fourth nitride region 64 is a superlattice layer. By providing such a fourth nitride region 64, for example, it is easy to relieve stress.

[0037] The first film thickness ta of each of the plurality of first films 64a is, for example, 1 nm or more and less than 10 nm. The second film thickness tb of each of the plurality of second films 64b is, for example, 10 nm or more and 50 nm or less.

[0038] In the nitride structure 111, the average Al composition ratio in the fourth nitride region 64 can decrease in the direction from the third nitride region 63 toward the semiconductor component 10M. For example, in the plurality of first films 64a, the Al composition ratio can decrease in the direction from the third nitride region 63 toward the semiconductor component 10M. For example, in the plurality of first films 64a, the thickness ta of the first film can decrease in the direction from the third nitride region 63 toward the semiconductor component 10M. For example, in the plurality of second films 64b, the thickness tb of the second film can increase in the direction from the third nitride region 63 toward the semiconductor component 10M.

[0039] Figure 3 is a schematic cross-sectional view illustrating the nitride structure of the first embodiment. As Figure 3 shown, in the nitride structure 112 of the embodiment, the configuration of the semiconductor component 10M is different from that of the semiconductor component 10M in the nitride structure 110 or the nitride structure 111. Except for this, the configuration of the nitride structure 112 can be the same as that of the nitride structure 110 or the nitride structure 111.

[0040] As Figure 3 shown, in the nitride structure 112, the semiconductor component 10M further includes a third semiconductor region 30. The third semiconductor region 30 is provided between the nitride component 60M and the first semiconductor region 10. The third semiconductor region 30 contains Al z3 Ga 1-z3 N (0 ≤ z3 < z2). The composition ratio z3 is, for example, 0 or more and 0.13 or less. The third semiconductor region 30 contains, for example, GaN. The third semiconductor region 30 contains carbon. On the other hand, the first semiconductor region 10 does not contain carbon. Or, the carbon concentration in the third semiconductor region 30 is higher than the carbon concentration in the first semiconductor region 10. For example, the first semiconductor region 10 is i-GaN. By providing such a third semiconductor region 30, for example, it is easy to obtain higher crystal quality. For example, carbon can compensate for carriers that generate leakage current. By providing the carbon-containing third semiconductor region 30, for example, leakage current can be more effectively suppressed.

[0041] (Second Embodiment) The second embodiment relates to a semiconductor device. The semiconductor device of the embodiment includes the nitride structure of the first embodiment. Hereinafter, an example in which the semiconductor device includes the nitride structure 110 will be described. The semiconductor device can include the nitride structure 111 or the nitride structure 112.

[0042] Figure 4 is a schematic cross-sectional view illustrating the semiconductor device of the second embodiment. As Figure 4 As shown, the semiconductor device 120 of the embodiment includes the nitride structure 110 of the first embodiment, a first electrode 51 , a second electrode 52 , and a third electrode 53 . The semiconductor device 120 may further include an insulating member 41 .

[0043] The direction from the first electrode 51 to the second electrode 52 is along the second direction D2 intersecting the first direction D1. The second direction D2 is, for example, the X-axis direction. The position of the third electrode 53 in the second direction D2 is located between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2.

[0044] The semiconductor component 10M includes a first semiconductor region 10 and a second semiconductor region 20. The semiconductor component 10M may further include a third semiconductor region 30 (see Figure 3 ).

[0045] The first semiconductor region 10 includes a first partial region 10a, a second partial region 10b, a third partial region 10c, a fourth partial region 10d, and a fifth partial region 10e. The direction from the first partial region 10a to the first electrode 51 is along the first direction D1. The direction from the second partial region 10b to the second electrode 52 is along the first direction D1. The third partial region 10c is located between the first partial region 10a and the second partial region 10b in the second direction D2. The direction from the third partial region 10c to the third electrode 53 is along the first direction D1. The fourth partial region 10d is located between the first partial region 10a and the third partial region 10c in the second direction D2. The fifth partial region 10e is located between the third partial region 10c and the second partial region 10b in the second direction D2.

[0046] The second semiconductor region 20 includes a sixth partial region 20f and a seventh partial region 20g. The direction from the fourth partial region 10d to the sixth partial region 20f is along the first direction D1. The direction from the fifth partial region 10e to the seventh partial region 20g is along the first direction D1.

[0047] For example, at least a portion of the insulating member 41 is provided between the semiconductor component 10M and the third electrode 53. For example, the insulating member 41 includes a first insulating region 41p. The first insulating region 41p is provided between the third partial region 10c and the third electrode 53 in the first direction (Z-axis direction).

[0048] The first electrode 51 is electrically connected to the sixth partial region 20f. The second electrode 52 is electrically connected to the seventh partial region 20g. The first electrode 51, the second electrode 52, and the third electrode 53 may extend, for example, along a third direction D3. The third direction D3 intersects a plane including the first direction D1 and the second direction D2.

[0049] In the semiconductor device 120, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 is, for example, a potential based on the potential of the first electrode 51. The first electrode 51 functions as, for example, a source electrode. The second electrode 52 functions as, for example, a drain electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 120 is, for example, a HEMT (High Electron Mobility Transistor).

[0050] According to the embodiment, leakage current can be suppressed. For example, a high withstand voltage can be obtained. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0051] In the semiconductor device 120, at least a portion of the third electrode 53 is provided between the sixth partial region 20f and the seventh partial region 20g in the second direction D2. At least a portion of the third electrode 53 may be provided between the fourth partial region 10d and the fifth partial region 10e in the second direction D2. The first insulating region 41p may be provided between the fourth partial region 10d and the fifth partial region 10e. The semiconductor device 120 is, for example, a normally-off type.

[0052] Figure 5 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment. like Figure 5 As shown, the semiconductor device 121 of the embodiment includes the nitride structure 110 of the first embodiment, the first electrode 51, the second electrode 52, the third electrode 53 and the insulating member 41. In the semiconductor device 121, the third electrode 53 does not overlap with the sixth partial region 20f and the seventh partial region 20g in the second direction D2. The third electrode 53 does not overlap with the fourth partial region 10d and the fifth partial region 10e in the second direction D2. The semiconductor device 121 is, for example, a normally-off type. In the semiconductor device 121, leakage current can also be suppressed. A semiconductor device capable of improving characteristics can be provided.

[0053] In an embodiment, information about the shape of the nitride region, etc. can be obtained, for example, by electron microscope observation, etc. Information about the composition and element concentration in the nitride region can be obtained, for example, by EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry), etc. Information about the composition in the nitride region can also be obtained, for example, by X-ray reciprocal lattice space mapping, etc.

[0054] The implementation method may include the following technical solutions. (Technical Solution 1) A nitride structure comprising: Matrix, Nitride components, and Semiconductor components containing Ga and N, in, The nitride component is disposed between the substrate and the semiconductor component in a first direction, The nitride component includes a first nitride region, a second nitride region and a third nitride region. The first nitride region is disposed between the substrate and the third nitride region. The second nitride region is provided between the first nitride region and the third nitride region, The first nitride region includes AlN, The second nitride region includes Al x2 Ga 1-x2 N(0 <x2<1), The third nitride region includes Al x3 Ga 1-x3 N(0 <x3≤1,x2<x3), A second thickness of the second nitride region along the first direction is thinner than a third thickness of the third nitride region along the first direction.

[0055] (Technical Solution 2) The nitride structure according to technical solution 1, wherein: The first nitride region is in contact with the substrate, The second nitride region is in contact with the first nitride region, The third nitride region is in contact with the second nitride region.

[0056] (Technical Solution 3) The nitride structure according to technical solution 1, wherein: The second thickness is thinner than a first thickness of the first nitride region along the first direction.

[0057] (Technical Solution 4) The nitride structure according to technical solution 3, wherein: The third thickness is thicker than the first thickness.

[0058] (Technical Solution 5) The nitride structure according to claim 3 or 4, wherein the first thickness is greater than or equal to 100 nm and less than or equal to 300 nm.

[0059] (Technical Solution 6) The nitride structure according to any one of technical solutions 1 to 5, wherein The second thickness is greater than 10 nm and less than 100 nm, The third thickness is greater than or equal to 100 nm and less than or equal to 300 nm.

[0060] (Technical Solution 7) The nitride structure according to any one of claims 1 to 6, wherein: The x2 is greater than or equal to 0.15 and less than 0.7, The x3 is greater than or equal to 0.7 and less than or equal to 1.

[0061] (Technical Solution 8) The nitride structure according to any one of claims 1 to 7, wherein: The nitride component further includes a fourth nitride region containing Al, Ga and N, The fourth nitride region is provided between the third nitride region and the semiconductor component, The fourth nitride region includes a first region and a second region, The second region is provided between the first region and the semiconductor component, The Al composition ratio in the second region is lower than the Al composition ratio in the first region.

[0062] (Technical Solution 9) The nitride structure according to claim 8, wherein the Al composition ratio in the fourth nitride region decreases in a direction from the third nitride region toward the semiconductor component.

[0063] (Technical Solution 10) The nitride structure according to technical solution 8 or 9, wherein The fourth nitride region includes a plurality of first films and a plurality of second films. One of the plurality of first films is disposed between one of the plurality of second films and another of the plurality of second films, The one of the plurality of second films is located between the one of the plurality of first films and another of the plurality of first films, An Al composition ratio in the plurality of first films is higher than an Al composition ratio in the plurality of second films.

[0064] (Technical Solution 11) The nitride structure according to any one of claims 1 to 7, wherein: The nitride component further includes a fourth nitride region containing Al, Ga and N, The fourth nitride region is provided between the third nitride region and the semiconductor component, The fourth nitride region includes a plurality of first films and a plurality of second films. One of the plurality of first films is disposed between one of the plurality of second films and another of the plurality of second films, The one of the plurality of second films is located between the one of the plurality of first films and another of the plurality of first films, An Al composition ratio in the plurality of first films is higher than an Al composition ratio in the plurality of second films.

[0065] (Technical Solution 12) The nitride structure according to technical solution 10 or 11, wherein The thickness of each of the plurality of first films is greater than or equal to 1 nm and less than 10 nm. The second film thickness of each of the plurality of second films is not less than 10 nm and not more than 50 nm.

[0066] (Technical Solution 13) The nitride structure according to any one of claims 8 to 12, wherein the fourth nitride region is in contact with the third nitride region.

[0067] (Technical Solution 14) The nitride structure according to any one of claims 1 to 13, wherein the matrix contains Si.

[0068] (Technical Solution 15) The nitride structure according to any one of claims 1 to 14, wherein the first nitride region does not contain carbon, or the carbon concentration in the first nitride region is lower than the carbon concentration in the second nitride region.

[0069] (Technical Solution 16) The nitride structure according to any one of technical solutions 1 to 15, wherein The semiconductor component includes a first semiconductor region and a second semiconductor region, The first semiconductor region is provided between the nitride component and the second semiconductor region. The first semiconductor region includes Al z1 Ga 1-z1 N(0≤z1<1), The second semiconductor region includes Al z2 Ga 1-z2N(z1 <z2<1)。

[0070] (Technical Solution 17) According to the nitride structure described in technical solution 16, The semiconductor component further includes a third semiconductor region, The third semiconductor region is provided between the nitride component and the first semiconductor region. The third semiconductor region includes Al z3 Ga 1-z3 N(0≤z3 <z2), The third semiconductor region contains carbon.

[0071] (Technical Solution 18) A semiconductor device comprising: The nitride structure described in technical solution 16 or 17, The first electrode, The second electrode, and The third electrode, in, A direction from the first electrode to the second electrode is along a second direction intersecting the first direction, The position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction. The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The direction from the first partial region to the first electrode is along the first direction, The direction from the second partial region to the second electrode is along the first direction, The third partial region is located between the first partial region and the second partial region in the second direction, The direction from the third partial region to the third electrode is along the first direction, The fourth partial region is located between the first partial region and the third partial region in the second direction, The fifth partial region is located between the third partial region and the second partial region in the second direction, The second semiconductor region includes a sixth partial region and a seventh partial region, The direction from the fourth partial area to the sixth partial area is along the first direction, A direction from the fifth partial region to the seventh partial region is along the first direction.

[0072] (Technical Solution 19) The semiconductor device according to claim 18 further comprises an insulating component. At least a portion of the insulating member is located between the semiconductor member and the third electrode.

[0073] (Technical Solution 20) The semiconductor device according to claim 18 or 19, wherein at least a portion of the third electrode is located between the sixth partial region and the seventh partial region in the second direction.

[0074] According to the embodiment, a nitride structure and a semiconductor device capable of improving characteristics can be provided.

[0075] In the present specification, “perpendicular” and “parallel” include not only strictly perpendicular and strictly parallel but also include, for example, deviations that occur in the manufacturing process, as long as they are substantially perpendicular and substantially parallel.

[0076] In the specification of the present application, the term "electrically connected state" includes a state where a plurality of conductors are physically connected and current flows between the plurality of conductors. The term "electrically connected state" includes a state where another conductor is inserted between the plurality of conductors and current flows between the plurality of conductors.

[0077] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as the specific configuration of each element such as the substrate, nitride component, nitride region, semiconductor component, and semiconductor region included in the nitride structure can be appropriately selected by a person skilled in the art from the known range and can implement the present invention in the same manner and obtain the same effect, it is included in the scope of the present invention.

[0078] Furthermore, elements obtained by combining any two or more elements in each specific example within a technically possible range are included in the scope of the present invention as long as they include the gist of the present invention.

[0079] In addition, as an embodiment of the present invention, all nitride structures and semiconductor devices that can be implemented by those skilled in the art with appropriate design changes based on the above-mentioned nitride structures and semiconductor devices also belong to the scope of the present invention as long as they include the gist of the present invention.

[0080] Furthermore, within the scope of the concept of the present invention, a person skilled in the art can conceive of various changes and modifications, and these changes and modifications are also understood to belong to the scope of the present invention.

[0081] Although several embodiments of the present invention are described here, these embodiments are only provided as examples and are not intended to limit the scope of the present invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, changes, etc. can be made without departing from the scope of the present invention. These embodiments and their variations are included in the scope and spirit of the present invention, and are also included in the invention recorded in the claims and their equivalents.

Claims

1. A nitride structure comprising: Matrix, Nitride components, and Semiconductor components containing Ga and N, in, The nitride component is disposed between the substrate and the semiconductor component in a first direction, The nitride component includes a first nitride region, a second nitride region and a third nitride region. The first nitride region is disposed between the substrate and the third nitride region. The second nitride region is provided between the first nitride region and the third nitride region, The first nitride region includes AlN, The second nitride region includes Al x2 Ga 1-x2 N, where 0 <x2<1, The third nitride region includes Al x3 Ga 1-x3 N, where 0 <x3≤1,x2<x3, A second thickness of the second nitride region along the first direction is thinner than a third thickness of the third nitride region along the first direction.

2. The nitride structure according to claim 1, wherein The first nitride region is in contact with the substrate, The second nitride region is in contact with the first nitride region, The third nitride region is in contact with the second nitride region.

3. The nitride structure according to claim 1, wherein The second thickness is thinner than a first thickness of the first nitride region along the first direction.

4. The nitride structure according to claim 3, wherein The third thickness is thicker than the first thickness.

5. The nitride structure according to claim 1, wherein The second thickness is greater than 10 nm and less than 100 nm, The third thickness is greater than or equal to 100 nm and less than or equal to 300 nm.

6. The nitride structure according to claim 1, wherein The nitride component further includes a fourth nitride region containing Al, Ga and N, The fourth nitride region is provided between the third nitride region and the semiconductor component, The fourth nitride region includes a first region and a second region, The second region is provided between the first region and the semiconductor component, The Al composition ratio in the second region is lower than the Al composition ratio in the first region.

7. The nitride structure according to claim 1, wherein The nitride component further includes a fourth nitride region containing Al, Ga and N, The fourth nitride region is provided between the third nitride region and the semiconductor component, The fourth nitride region includes a plurality of first films and a plurality of second films. One of the plurality of first films is disposed between one of the plurality of second films and another of the plurality of second films, The one of the plurality of second films is located between the one of the plurality of first films and another of the plurality of first films, An Al composition ratio in the plurality of first films is higher than an Al composition ratio in the plurality of second films.

8. The nitride structure according to claim 1, wherein The first nitride region does not contain carbon, or a carbon concentration in the first nitride region is lower than a carbon concentration in the second nitride region.

9. The nitride structure according to claim 1, wherein The semiconductor component includes a first semiconductor region and a second semiconductor region, The first semiconductor region is provided between the nitride component and the second semiconductor region, The first semiconductor region includes Al z1 Ga 1-z1 N, where 0≤z1<1, The second semiconductor region includes Al z2 Ga 1-z2 N, where z1 <z2<1。 10. A semiconductor device comprising: The nitride structure according to claim 9, The first electrode, The second electrode, and The third electrode, in, A direction from the first electrode to the second electrode is along a second direction intersecting the first direction, The position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction. The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The direction from the first partial region to the first electrode is along the first direction, The direction from the second partial region to the second electrode is along the first direction, The third partial region is located between the first partial region and the second partial region in the second direction, The direction from the third partial region to the third electrode is along the first direction, The fourth partial region is located between the first partial region and the third partial region in the second direction, The fifth partial region is located between the third partial region and the second partial region in the second direction, The second semiconductor region includes a sixth partial region and a seventh partial region, The direction from the fourth partial area to the sixth partial area is along the first direction, A direction from the fifth partial region to the seventh partial region is along the first direction.

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