Light emitting diode and display device

Abstract

The invention discloses a light-emitting diode and a display device, an epitaxial structure of the light-emitting diode comprises a first semiconductor layer, an active layer and a second semiconductor layer, and the second semiconductor layer, the active layer and a part of the first semiconductor layer are sequentially etched downwards from a part of the surface of the second semiconductor layer. And etching the remaining part of the first semiconductor layer to form a first mesa structure. And the remaining non-etched second semiconductor layer, the active layer and the corresponding part of the first semiconductor layer form a second mesa structure. The metal laminated structure is arranged above the first mesa structure and / or the second mesa structure, and the metal laminated structure comprises first metal layers and second metal layers which are alternately arranged. Wherein the first metal layer is an inert metal layer, and the second metal layer is a magnetic metal layer. The inert metal layer in the light-emitting diode can block corrosion of etching liquid in the subsequent process, so that the metal laminated structure is protected, and the reliability and the transfer yield of the light-emitting diode are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a light emitting diode and a display device. Background Art

[0002] Micro-LED is a new generation of display technology. Compared with traditional LED, it has the same light-emitting principle, but the scale of a single LED is less than 20μm, which makes its preparation much more difficult. Among them, mass transfer technology is the key. In order to adapt to large-area display, a large number of LEDs need to be transferred from the sapphire substrate to the glass plate. The traditional "grab and release" method is too inefficient to transfer large areas in a short time.

[0003] Currently, there is a chip transfer method that sets a magnetic metal component in the electrode structure of the chip, places the chip in an electric field and a magnetic field environment, controls the magnetic field and electric field strength during transfer, and causes the chip to move to a fixed position on the substrate under the action of the magnetic field force and the electric field force, thereby achieving chip transfer. However, the magnetic metal on the existing chip is easily damaged during the chip preparation process, which affects the chip reliability and transfer yield. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a light emitting diode and a display device to ensure the reliability of the chip structure and the transfer yield.

[0005] In order to achieve the above-mentioned object and other related objects, the present invention provides a light emitting diode, which includes:

[0006] An epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer, wherein the second semiconductor layer, the active layer and a portion of the first semiconductor layer are sequentially etched downward from a portion of the surface of the second semiconductor layer, and the remaining portion of the first semiconductor layer is etched to form a first mesa structure; the remaining unetched second semiconductor layer, the active layer and a corresponding portion of the first semiconductor layer are formed into a second mesa structure;

[0007] The metal stacked structure is arranged above the first mesa structure and / or the second mesa structure, and the metal stacked structure includes a first metal layer and a second metal layer that are alternately arranged; wherein the first metal layer is an inert metal layer, and the second metal layer is a magnetic metal layer.

[0008] According to another aspect of the present invention, a display device is also provided, comprising a packaging substrate and at least one light emitting diode arranged on the packaging substrate, wherein a side of the light emitting diode having an electrode layer is formed as a light emitting side, and a side opposite to the light emitting side is formed as a backlight side, the backlight side of the light emitting diode is connected to the packaging substrate, and the light emitting diode is the above-mentioned light emitting diode.

[0009] Compared with the prior art, the light emitting diode and the display device of the present invention have at least the following beneficial effects:

[0010] The light-emitting diode of the present invention includes an epitaxial structure and a metal stacking structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer. The second semiconductor layer, the active layer and a part of the first semiconductor layer are sequentially etched downward from a part of the surface of the second semiconductor layer, and the remaining part of the first semiconductor layer is etched to form a first mesa structure. The remaining unetched second semiconductor layer, the active layer and the corresponding part of the first semiconductor layer form a second mesa structure. The metal stacking structure is arranged above the first mesa structure and / or the second mesa structure, and the metal stacking structure includes a first metal layer and a second metal layer that are alternately arranged. The first metal layer is an inert metal layer, and the second metal layer is a magnetic metal layer. Since the first metal layer in the light-emitting diode of the present invention is an inert metal layer, the inert metal layer can block the corrosion of the etching solution in the subsequent process, and thus can protect the metal stacking structure.

[0011] Furthermore, the side of the metal stack structure close to the first mesa structure and / or the second mesa structure is the first layer, and the last layer of the side of the metal stack structure away from the first mesa structure and / or the second mesa structure is the last layer, and both the first layer and the last layer are first metal layers. The first metal layer is arranged on the top and bottom layers of the metal stack structure, and the magnetic metal layer can be coated to protect the magnetic metal layer, thereby preventing the electrode layer formed on the metal stack structure from falling off, and improving the reliability of the light-emitting diode.

[0012] Furthermore, the volume ratio of the magnetic metal layer and the light-emitting diode in the metal stack structure is between 0.8% and 1.2%. By controlling the ratio of the magnetic metal layer, the chip transfer in the magnetic field or electric field can be realized, thereby improving the transfer efficiency.

[0013] The display device of the present invention includes the above-mentioned light-emitting diode and also has the above-mentioned technical effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A schematic diagram of the structure of a light emitting diode in an embodiment of the present invention;

[0015] Figure 2 A schematic diagram of a metal stack structure of a light emitting diode according to an embodiment of the present invention;

[0016] Figure 3 is a schematic diagram of another metal stacked structure of a light emitting diode in an embodiment of the present invention;

[0017] Figure 4 is a schematic diagram of a top view of another light emitting diode according to an embodiment of the present invention;

[0018] Figure 5 For along Figure 4 A cross-sectional view along the A-A' direction;

[0019] Figure 6 Schematic diagram of the structure of a display device in an embodiment of the present invention.

[0020] List of reference numerals:

[0021] 100 Epitaxial structure

[0022] 101 First semiconductor layer

[0023] 102 Active layer

[0024] 103 Second semiconductor layer

[0025] 110 First table structure

[0026] 120 Second table structure

[0027] 121 First side wall

[0028] 122 Second side wall / epitaxial structure side wall

[0029] 200 First ohmic contact layer

[0030] 300 Metal laminate structure

[0031] 301 First Metal Layer

[0032] 302 Second Metal Layer

[0033] 401 first electrode layer

[0034] 402 second electrode layer

[0035] 500 Passivation layer

[0036] 001 Light Emitting Diode

[0037] 002 Package substrate

[0038] 010 Light output side

[0039] 011 Backlight side DETAILED DESCRIPTION

[0040] The following specific embodiments illustrate the embodiments of the present invention, and those familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0041] It should be noted that the diagrams provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Although the diagrams only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of each component can be changed at will during actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions that can be implemented in this application, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by the present invention.

[0042] The inventors have found that when a magnetic metal structure is set in an electrode structure and an electrode layer is formed on the magnetic metal structure, the electrode layer needs to be wet-etched. During wet etching, the etching solution may corrode the magnetic metal structure, thereby affecting the surface morphology of the magnetic metal structure, and further affecting the bonding force between the subsequently formed electrode layer and the magnetic metal structure and the epitaxial layer, resulting in the electrode layer or the magnetic metal structure falling off or being damaged, affecting the reliability of the chip. In addition, if the magnetic metal is corroded by the etching solution, causing it to fall off or be damaged, it will also affect the transfer yield of the chip.

[0043] In order to solve the background technology and the above-mentioned technical problems, the present embodiment provides a light emitting diode and a display device, which can improve the reliability of the light emitting diode having magnetism, and further improve the transfer yield and efficiency.

[0044] Specifically, the light emitting diode comprises:

[0045] An epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer, wherein the second semiconductor layer, the active layer and a portion of the first semiconductor layer are sequentially etched downward from a portion of the surface of the second semiconductor layer, and the remaining portion of the first semiconductor layer is etched to form a first mesa structure; the remaining unetched second semiconductor layer, the active layer and a corresponding portion of the first semiconductor layer are formed into a second mesa structure;

[0046] The metal stacked structure is arranged above the first mesa structure and / or the second mesa structure, and the metal stacked structure includes a first metal layer and a second metal layer that are alternately arranged; wherein the first metal layer is an inert metal layer, and the second metal layer is a magnetic metal layer. Since the first metal layer in the light-emitting diode of the present invention is an inert metal layer, the inert metal layer can block the corrosion of the etching solution in the subsequent process, thereby protecting the metal stacked structure, and preventing the damage of the metal stacked structure from affecting the bonding force between the metal stacked structure and the electrode layer formed subsequently, resulting in the electrode falling off.

[0047] Optionally, the side of the metal stack structure close to the first mesa structure and / or the second mesa structure is the first layer, and the last layer of the metal stack structure away from the first mesa structure and / or the second mesa structure is the last layer, and the first layer and the last layer are both first metal layers. The first metal layer is arranged on the top and bottom layers of the metal stack structure, and the magnetic metal layer can be coated to protect the magnetic metal layer, thereby preventing the electrode layer subsequently formed on the metal stack structure from falling off, and improving the reliability of the light-emitting diode. Optionally, the metal stack structure is arranged above the first mesa structure to prevent the magnetic metal structure from affecting the light output of the light-emitting diode.

[0048] Optionally, the thickness of the first layer is smaller than that of the last layer. Since the last layer contacts the etching solution first, the thickness of the last layer is increased, which can effectively block the erosion of the etching solution.

[0049] Optionally, the thickness of the first metal layer is smaller than the thickness of the second metal layer.

[0050] Optionally, the thickness of the second metal layer is more than 5 times the thickness of the first metal layer to ensure that the magnetic metal layer of the second metal layer meets the magnetic force requirements.

[0051] Optionally, the volume ratio of the magnetic metal layer to the light-emitting diode is between 0.8% and 1.2%. By controlling the volume ratio of the magnetic metal layer to the light-emitting diode to be between 0.8% and 1.2%, effective transfer of the chip under a magnetic field or electric field can be achieved.

[0052] Optionally, the number of the first metal layer is between 3 and 8. The number of the first metal layer in the metal stacked structure is set to 3 to 8, so as to effectively relieve the structural stress of the metal stacked structure and improve the bonding strength.

[0053] Optionally, the cross-sectional area of ​​the metal stack structure gradually decreases in a direction away from the first mesa structure, and an angle between an inner sidewall of the metal stack structure and a mesa of the first mesa structure is between 30° and 50°.

[0054] Optionally, the angle between the sidewall of the epitaxial structure and the plane where the first semiconductor layer is located is between 70 and 90 degrees. Optionally, the angle between the sidewall of the second mesa structure and the plane where the first semiconductor layer is located is between 70 and 90 degrees. The angle setting of the sidewall is more conducive to the transfer of the chip in conjunction with the subsequent metal stack structure.

[0055] Optionally, the height difference between the first mesa structure and the second mesa structure occupies 1 / 3 to 1 / 2 of the height of the entire epitaxial structure. This height difference setting is also conducive to the transfer of the chip.

[0056] Optionally, a height difference between the first mesa structure and the second mesa structure is between 2.5 μm and 2.8 μm, and a height of the epitaxial structure is between 5.8 μm and 6.3 μm.

[0057] Optionally, the light emitting diode further comprises:

[0058] The electrode contact layer is arranged between the first mesa structure and the metal stacked structure.

[0059] Optionally, the light emitting diode further comprises:

[0060] A first electrode layer is disposed on the metal stack structure and is electrically connected to the first semiconductor layer;

[0061] The second electrode layer is disposed on the second mesa structure and is electrically connected to the second semiconductor layer.

[0062] Optionally, materials of the first electrode layer and the second electrode layer are both transparent conductive materials.

[0063] Optionally, the first electrode layer also extends to and covers the side wall of the first mesa structure, the second mesa structure includes a first side wall intersecting with the mesa of the first mesa structure and a second side wall of the second mesa structure except the first side wall, the second side wall is formed as the side wall of the entire epitaxial structure, the second electrode layer extends from the surface of the second mesa structure and covers the second side wall, and the covering height of the second electrode layer is 1 / 3 to 1 / 2 of the height of the side wall of the epitaxial structure.

[0064] Optionally, a passivation layer is further disposed on the sidewall of the second mesa structure, and the second electrode layer covering the sidewall of the epitaxial structure is formed on the passivation layer.

[0065] Optionally, the first mesa structure is arranged annularly around the second mesa structure, and the metal laminate structure extends along the mesa of the first mesa structure to form an annular structure. The arrangement of the annular structure allows the magnetic metal material to be evenly distributed on the chip, ensuring the stability of chip transfer.

[0066] This embodiment also provides a display device, including a packaging substrate and at least one light-emitting diode arranged on the packaging substrate, wherein the side of the light-emitting diode having the electrode layer is formed as a light-emitting side, and the side opposite to the light-emitting side is formed as a backlight side, the backlight side of the light-emitting diode is connected to the packaging substrate, and the light-emitting diode is the above-mentioned light-emitting diode.

[0067] The present invention is described in detail below with reference to specific embodiments.

[0068] Example 1

[0069] This embodiment provides a light emitting diode, referring to Figure 1 The light emitting diode includes an epitaxial structure 100 and a metal stacked structure 300 disposed on the epitaxial structure 100 and electrically connected to the epitaxial structure. The metal stacked structure 300 includes a magnetic metal material. The metal stacked structure 300 with magnetic properties is used to cooperate with the magnetic field or electric field in the transfer environment during subsequent chip transfer, so that the chip is transferred to a fixed position on the substrate under the action of the magnetic field force or the electric field force.

[0070] Specifically, refer to Figure 1 , the epitaxial structure 100 is a light-emitting unit of a light-emitting diode. The epitaxial structure 100 includes a stacked structure formed by a first semiconductor layer 101, an active layer 102 and a second semiconductor layer 103 in sequence. The epitaxial structure 100 is formed with a first mesa structure 110 and a second mesa structure 120. The second semiconductor layer 103, the active layer 102 and a part of the first semiconductor layer 101 are sequentially etched downward from a part of the surface of the second semiconductor layer 103, and the remaining part of the first semiconductor layer 101 after etching is formed as the first mesa structure 110. The remaining unetched second semiconductor layer 103, the active layer 102 and the corresponding part of the first semiconductor layer 101 are formed as the second mesa structure 120. The first semiconductor layer 101 can be an N-type semiconductor layer, and the second semiconductor layer 103 can be a P-type semiconductor layer. The first semiconductor layer 101 is used to provide electrons for compound light emission, and the second semiconductor layer 103 is used to provide holes for compound light emission. The active layer 102 is a single quantum well or a multi-quantum well, which is used for the recombination of electrons and holes to emit light. Of course, the first semiconductor layer 101 can be a P-type semiconductor layer, and the second semiconductor layer 103 can be an N-type semiconductor layer.

[0071] In this embodiment, refer to Figure 1The first mesa structure 110 is arranged on one side of the epitaxial structure 100, and the second mesa structure 120 is arranged on the other side of the epitaxial structure 100. The first mesa structure 110 is formed by etching the epitaxial structure 110. The etching stop mesa formed by etching from the second semiconductor layer 103 of the epitaxial structure 110 to the first semiconductor layer 101 is the mesa of the first mesa structure 110. The sidewall formed by etching the epitaxial structure 110 is formed as a partial sidewall of the second mesa structure 120, and the partial sidewall is the first sidewall 110 of the second mesa structure 120. The first sidewall 110 intersects with the mesa of the first mesa structure 110. The sidewall of the second mesa structure 120 except the first sidewall 121 is formed as a second sidewall 122, and the second sidewall 122 is formed as the sidewall of the epitaxial structure 100. In an optional embodiment, the angle α between the side wall (second side wall 122) of the epitaxial structure 100 and the plane where the first semiconductor layer 101 is located is between 70 and 90 degrees, for example, 85 degrees. The angle α between the first side wall 121 of the second mesa structure 120 and the plane where the first semiconductor layer is located is between 70 and 90 degrees, for example, 85 degrees. The angle setting of the above-mentioned side walls is more conducive to the transfer of chips in conjunction with the subsequent metal stack structure 300. Optionally, the height difference between the first mesa structure 110 and the second mesa structure 120 occupies 1 / 3 to 1 / 2 of the height of the entire epitaxial structure 100. The height difference setting is also conducive to cooperating with chip transfer and improving chip transfer efficiency. For example, the height difference H1 between the first mesa structure 110 and the second mesa structure 120 is between 2.5μm and 2.8μm, and the height H2 of the epitaxial structure 100 is between 5.8μm and 6.3μm.

[0072] Reference Figure 1 The metal stacked structure 300 is disposed above the first mesa structure 110 and / or the second mesa structure 120, referring to Figure 2 , the metal stack structure 300 includes a first metal layer 301 and a second metal layer 302 that are alternately arranged. Among them, the second metal layer 302 is a magnetic metal layer, and the volume ratio of the magnetic metal layer to the light-emitting diode is between 0.8% and 1.2%. The magnetic metal stack structure 300 is used to cooperate with the magnetic field or electric field in the transfer environment during the subsequent chip transfer, so that it is transferred to a fixed position on the substrate under the action of the magnetic field force or the electric field force. By controlling the volume ratio of the magnetic metal layer to the volume ratio of the light-emitting diode to be between 0.8% and 1.2%, the effective transfer of the chip under the magnetic field or electric field can be achieved. In this embodiment, in order to prevent the metal stack structure 300 from absorbing the light emitted by the epitaxial layer, the metal stack structure 300 is only arranged on the first mesa structure 110. Of course, it is also possible to sacrifice the light output of part of the epitaxial layer to achieve a certain purpose and arrange the metal stack structure 300 on the second mesa structure 120.

[0073] In order to avoid unnecessary damage to the metal stack structure 300 during the etching process of the electrode structure to be formed subsequently, thereby affecting the combination of the subsequent electrode and the first mesa structure 110 and preventing the electrode from falling off. Figure 2 In this embodiment, the side of the metal stacked structure 300 close to the first mesa structure 110 is the first layer, and the last layer of the metal stacked structure 300 away from the first mesa structure 110 is the last layer. Both the first layer and the last layer are the first metal layer 301. In addition, the material of the first metal layer 301 is set to an inert metal material that is not easily etched by the etching solution, so as to avoid the metal stacked structure 300 and the first layer in contact with the first mesa structure 110 and the last layer in contact with the electrode layer from being damaged by the etching solution, thereby ensuring the adhesion of the electrode layer. In another example of this embodiment, referring to Figure 3 Each first metal layer 301 covers all surfaces of the previous magnetic metal layer. Since the magnetic metal layer is covered by the first metal layer 301, compared with Figure 2 In the metal stack structure 300, the first metal layer 301 protects the side of the magnetic metal layer from being corroded by the etching solution, thereby ensuring its magnetic properties. Optionally, since the last metal layer is located at the top layer, it will first contact the etching solution, and the thickness of the last metal layer is set to be greater than the thickness of the first layer, so as to better protect the magnetic metal layer from being corroded by the etching solution.

[0074] In order to improve the bonding force or adhesion between the metal stacked structure 300 and the first mesa structure 110, the metal stacked structure 300 is configured as a stacked structure in this embodiment to relieve the structural stress of the metal stacked structure 300 and improve the bonding force. Figure 2 Or as shown in Figure 3, the number of layers of the first metal layer 301 is between 3 and 8, and the number of layers of the second metal layer 302 is one layer less than the number of layers of the first metal layer 301. In this embodiment, the number of layers of the first metal layer 301 is 4, and the number of layers of the second metal layer 302 is 3. In order to control the thickness of the metal stack structure 300 and ensure the magnetic force of the metal stack structure 300, the thickness of the magnetic second metal layer 302 is more than 5 times the thickness of the first metal layer 301, for example, 10 times. In a specific example, the metal stack structure 300 is first metal layer 301 / second metal layer 302 / first metal layer 301 / second metal layer 302 / first metal layer 301 / second metal layer 302 / first metal layer 301. Among them, the material of the first metal layer 301 is platinum, the material of the second metal layer 302 is nickel, and the thickness of the metal stack is For example: Of course, the material of the first metal layer 301 can also be other inert metal materials that are resistant to etching by etching liquid, and the inert metal material needs to have good adhesion with the first mesa structure 110 or the ohmic contact layer formed on the first mesa structure 110. In order to achieve better metal bonding and buffer structural stress, the cross-sectional area of ​​the metal stack structure 300 gradually decreases in the direction away from the first mesa structure 110, and the angle between the inner side wall of the metal stack structure 300 and the mesa of the first mesa structure 110 is between 30° and 50°, for example, 40°±3°. In addition, when the angle between the inner side wall of the metal stack structure 300 and the mesa of the first mesa structure 110 is between 40°±3, combined with the above-mentioned metal stack thickness range setting, it can be achieved that the magnetic metal occupies 0.8 to 1.2% of the volume of the light-emitting diode.

[0075] Optionally, the light emitting diode further comprises an electrode contact layer. Figure 1 The first electrode contact layer 200 is disposed between the first mesa structure 110 and the metal stack structure 300. The material of the first electrode contact layer 200 can be one of gold, germanium, and nickel. The first electrode contact layer 200 has good bonding strength with the first metal layer of the metal stack structure 300.

[0076] Optionally, refer to Figure 1 , the light emitting diode further includes a first electrode layer 401 and a second electrode layer 402. The first electrode layer 401 is disposed on the metal stacked structure 300, and is connected to the first semiconductor layer 101 exposed by the first mesa structure 110 through the metal stacked structure 300. The second electrode layer 402 is disposed on the second mesa structure 120, and is electrically connected to the second semiconductor layer 103 on the second mesa structure 120. Since the light emitting side of the light emitting diode in this embodiment is disposed on the same side as the electrode, the first electrode layer 401 and the second electrode layer 402 are both configured as transparent conductive materials to ensure light emission from the light emitting side. Optionally, the transparent layer conductive material is ITO.

[0077] Optionally, refer to Figure 1, the first electrode layer 401 of the light-emitting diode is formed on the first mesa structure 110 and extends to completely cover the side wall of the first mesa structure 110. The second electrode layer 402 extends from the surface of the second mesa structure 120 and covers the second side wall 122. The height of the second electrode layer 402 covering the second side wall is 1 / 3 to 1 / 2 of the height of the side wall of the epitaxial structure 100. The first electrode layer 401 and the second electrode layer 402 extending to the side wall are used to meet the needs of back-end customers, such as being used for circuit connection in subsequent packaging to improve the yield of circuit design after transfer. Optionally, a passivation layer 500 is also provided on the first side wall 121 and the second side wall 122 of the second mesa structure 120 (the side wall of the epitaxial structure 100), and the second electrode layer 402 covering the second side wall 122 is formed on the passivation layer 500. Optionally, the passivation layer 500 can be silicon dioxide or silicon nitride. In the present embodiment, the material of the passivation layer 500 is silicon dioxide with a thickness of

[0078] In order to prevent the chip from being deflected during the transfer process and being unable to be smoothly transferred to the fixed position of the substrate, in one example, referring to Figure 4 and 5 The first mesa structure 110 is arranged in an annular direction around the second mesa structure 120, and the metal stacked structure 300 extends along the mesa of the first mesa structure 110 and forms an annular structure. The arrangement of the annular structure makes the magnetic metal material evenly distributed on the chip, ensuring the stability of chip transfer.

[0079] Example 2

[0080] This embodiment provides a display device, referring to Figure 6 The display device includes a packaging substrate 002 and at least one light emitting diode 001 disposed on the packaging substrate 002. The side of the light emitting diode 001 having the electrode layer is formed as a light emitting side 010, and the side opposite to the light emitting side 010 is formed as a backlight side 011. The backlight side 011 of the light emitting diode 001 is connected to the packaging substrate 002, and the light emitting diode in this embodiment is the light emitting diode in Embodiment 1, and its structure is not repeated here.

[0081] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A light emitting diode, characterized in that: include: An epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer, wherein the second semiconductor layer, the active layer and a portion of the first semiconductor layer are sequentially etched downward from a portion of the surface of the second semiconductor layer, and the remaining portion of the first semiconductor layer is etched to form a first mesa structure; The remaining unetched second semiconductor layer, the active layer and the corresponding portion of the first semiconductor layer are formed into a second mesa structure; A metal stacked structure is arranged above the first mesa structure and / or the second mesa structure, and the metal stacked structure includes a first metal layer and a second metal layer that are alternately arranged; wherein the first metal layer is an inert metal layer, and the second metal layer is a magnetic metal layer.

2. The light emitting diode according to claim 1, characterized in that: The metal stacked structure is arranged above the first mesa structure, the side of the metal stacked structure close to the first mesa structure is the first layer, the last layer of the metal stacked structure away from the first mesa structure is the last layer, and the first layer and the last layer are both first metal layers.

3. The light emitting diode according to claim 2, characterized in that: The thickness of the first layer is smaller than the thickness of the last layer.

4. The light emitting diode according to claim 1, characterized in that: The thickness of the first metal layer is smaller than the thickness of the second metal layer.

5. The light emitting diode according to claim 1, characterized in that: The thickness of the second metal layer is more than 5 times the thickness of the first metal layer.

6. The light emitting diode according to claim 1, characterized in that: The volume ratio of the magnetic metal layer to the light emitting diode is between 0.8% and 1.2%.

7. The light emitting diode according to claim 2, characterized in that: The number of the first metal layers is between 3 and 8.

8. The light emitting diode according to claim 1, characterized in that: The cross-sectional area of ​​the metal stacked structure gradually decreases in a direction away from the first mesa structure, and an angle between an inner sidewall of the metal stacked structure and a mesa of the first mesa structure is between 30° and 50°.

9. The light emitting diode according to claim 1, characterized in that: The angle between the side wall of the epitaxial structure and the plane where the first semiconductor layer is located is between 70 and 90 degrees.

10. The light emitting diode according to claim 1, characterized in that: An angle between a sidewall of the second mesa structure and a plane where the first semiconductor layer is located is between 70 and 90 degrees.

11. The light emitting diode according to claim 1, characterized in that: The height difference between the first mesa structure and the second mesa structure accounts for 1 / 3 to 1 / 2 of the height of the epitaxial structure.

12. The light emitting diode according to claim 1, characterized in that: The height difference between the first mesa structure and the second mesa structure is between 2.5 μm and 2.8 μm, and the height of the epitaxial structure is between 5.8 μm and 6.3 μm.

13. The light emitting diode according to claim 2, characterized in that: The light emitting diode further comprises: The electrode contact layer is arranged between the first mesa structure and the metal stacked structure.

14. The light emitting diode according to claim 2, characterized in that: The light emitting diode further comprises: A first electrode layer, disposed on the metal stacked structure and electrically connected to the first semiconductor layer; The second electrode layer is disposed on the second mesa structure and is electrically connected to the second semiconductor layer.

15. The light emitting diode according to claim 14, characterized in that: The materials of the first electrode layer and the second electrode layer are transparent conductive materials.

16. The light emitting diode according to claim 14, characterized in that: The first electrode layer also extends to and covers the side wall of the first mesa structure, the second mesa structure includes a first side wall intersecting with the mesa of the first mesa structure and a second side wall of the second mesa structure except the first side wall, the second side wall is formed as the side wall of the entire epitaxial structure, the second electrode layer extends from the surface of the second mesa structure and covers the second side wall, and the covering height of the second electrode layer is 1 / 3 to 1 / 2 of the height of the side wall of the epitaxial structure.

17. The light emitting diode according to claim 16, characterized in that: A passivation layer is further disposed on the sidewall of the second mesa structure, and the second electrode layer covering the sidewall of the epitaxial structure is formed on the passivation layer.

18. The light emitting diode according to claim 2, characterized in that: The first mesa structure is annularly arranged around the second mesa structure, and the metal laminated structure extends along the mesa of the first mesa structure to form an annular structure.

19. A display device, characterized in that: The display device includes a packaging substrate and at least one light-emitting diode arranged on the packaging substrate, wherein a side of the light-emitting diode having an electrode layer is formed as a light-emitting side, and a side opposite to the light-emitting side is formed as a backlight side, and the backlight side of the light-emitting diode is connected to the packaging substrate, and the light-emitting diode is the light-emitting diode described in any one of claims 1 to 18.

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