Pixel definition layer of silicon-based Micro OLED (Organic Light Emitting Diode) micro display device, preparation method of pixel definition layer and display panel

Abstract

The invention belongs to the technical field of silicon-based Micro OLED micro display, and discloses a pixel definition layer of a silicon-based Micro OLED micro display device, a preparation method of the pixel definition layer and a display panel. The preparation method of the pixel definition layer of the silicon-based Micro OLED micro display device comprises the following steps: providing a substrate; film plating: plating an anode film on the substrate; etching: performing etching treatment on the anode film to form an anode pattern; leveling, namely leveling the substrate by adopting a photosensitive material to form a photosensitive film layer, and wrapping the anode pattern with the photosensitive film layer; and exposure and development: performing over-development treatment on the substrate to remove part of the photosensitive film layer, so that the anode pattern is exposed, and the height of the anode pattern is flush with the height of the photosensitive film layer. The pixel definition layer of the silicon-based Micro OLED micro display device provided by the invention is prepared by using the method. The display panel provided by the invention comprises the pixel definition layer of the silicon-based Micro OLED micro display device.

Description

Technical Field

[0001] The present invention relates to the field of silicon-based Micro OLED micro-display technology, and in particular to a silicon-based Micro OLED micro-display device pixel definition layer and a preparation method thereof, and a display panel. Background Art

[0002] Micro OLED (Organic Light Emitting Display) is known as the dark horse of the next generation of display technology. It is now widely used in military markets such as machine-worn helmets, gun sights, and night vision goggles. With the application of new technologies such as AR / VR and autonomous driving, Micro OLED microdisplays will usher in explosive growth. Most of the existing terminal products on the market are head-mounted or wearable devices. At present, its mass production still faces great challenges. During the manufacturing process, many process difficulties cause a large loss of its yield.

[0003] Since silicon-based Micro OLED is a high PPI (Pixels Per Inch) display, the process steps are complicated and the preparation requirements are extremely high. The preparation of Micro OLED requires the use of a high-resolution Stepper / Scanner (stepper / scanner) lithography machine and a high-contrast PR (Photo Resist), but the high-contrast PR angle is relatively steep, which leads to a too large angle when preparing the anode. When preparing the device, the cathode is very easy to break at this point because the anode angle is too large, thus affecting the Micro OLED yield.

[0004] Therefore, there is an urgent need for a silicon-based Micro OLED micro-display device pixel definition layer and a preparation method thereof, and a display panel to solve the above technical problems. Summary of the invention

[0005] The purpose of the present invention is to provide a silicon-based Micro OLED micro-display device pixel definition layer and a preparation method thereof, and a display panel, aiming to solve the problem that the anode angle prepared by the existing preparation method is too large, and the cathode is very easy to break at this point during device preparation due to the large anode angle, resulting in low product yield. The silicon-based Micro OLED micro-display device pixel definition layer and a preparation method thereof, and the display panel have a smaller anode slope angle, which effectively solves the problem of cathode breakage at this point during device operation, thereby improving product yield and production capacity.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] A method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device comprises the following steps:

[0008] providing a substrate;

[0009] Coating, coating an anodic film on the substrate;

[0010] Etching: etching the anode film to form an anode pattern;

[0011] Leveling, using a photosensitive material to perform leveling treatment on the substrate to form a photosensitive film layer, wherein the photosensitive film layer wraps the anode pattern;

[0012] Exposure and development: exposing and developing the substrate to remove part of the photosensitive film layer and expose the anode pattern, and the height of the anode pattern is flush with the height of the photosensitive film layer.

[0013] In some possible implementations, the substrate needs to be cleaned and dried before the coating.

[0014] In some possible implementations, during the leveling, the photosensitive material used is photosensitive polyimide.

[0015] In some possible implementations, during the leveling, a leveling method adopted is a spin coating method.

[0016] In some possible implementations, during the leveling process, the glue dripping amount is 1 ml-2 ml, and the rotation speed is 2800 rpm-3200 rpm.

[0017] In some possible implementations, the exposure and development process lasts no longer than 30 seconds, and the exposure amount is 2800 J / ㎡-3200 J / ㎡.

[0018] In some possible implementations, after the exposure and development, the substrate needs to be rinsed and dried.

[0019] In some possible implementations, the cleaning is performed using pure water, and the cleaning rotation speed is 500 rpm-700 rpm.

[0020] The present invention provides a silicon-based Micro OLED micro-display device pixel definition layer, which is manufactured according to the method for preparing a silicon-based Micro OLED micro-display device pixel definition layer as described in any of the above schemes.

[0021] The display panel provided by the present invention comprises the above-mentioned silicon-based Micro OLED micro-display device pixel definition layer.

[0022] Beneficial effects of the present invention:

[0023] The preparation method of the pixel definition layer of the silicon-based Micro OLED micro-display device provided by the present invention uses a photosensitive material to perform leveling treatment on the substrate, which can level the pits of the anode pattern, which is beneficial to the subsequent process. In addition, the preparation method only uses a photolithography machine to complete the steps required for leveling and pattern preparation, reduces the frequency of use of dry etching and degumming machines, has fewer process steps, and is conducive to improving product yield and production capacity.

[0024] The present invention also provides a silicon-based Micro OLED micro-display device pixel definition layer prepared using the above preparation method, wherein the anode slope angle is small, and the problem of cathode breakage at this point during device operation is effectively solved.

[0025] The present invention also provides a display panel, comprising the above-mentioned silicon-based Micro OLED micro-display device pixel definition layer, which has good reliability in use. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic diagram of the structure after an anode film is plated on a substrate provided by an embodiment of the present invention;

[0027] Figure 2 It is a structural schematic diagram of forming an anode pattern after etching the anode film according to an embodiment of the present invention;

[0028] Figure 3 is a schematic diagram of the structure after a photosensitive film layer is formed according to an embodiment of the present invention;

[0029] Figure 4 It is a schematic diagram of the structure after the photosensitive film layer is exposed and developed according to an embodiment of the present invention.

[0030] In the figure:

[0031] 100, substrate; 200, anode film; 300, anode pattern; 400, photosensitive film layer. DETAILED DESCRIPTION

[0032] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0033] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0035] In the description of this embodiment, the terms "upper", "lower", "right", etc., directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0036] The present embodiment provides a silicon-based Micro OLED micro-display device pixel definition layer and a preparation method and a display panel, aiming to solve the problem that the anode angle prepared by the existing preparation method is too large, and the cathode is very easy to break at this point during device preparation due to the large anode angle, resulting in low product yield. The anode slope angle of the pixel definition layer of the silicon-based Micro OLED micro-display device is small, which effectively solves the problem of cathode breaking at this point when the device is operating, thereby improving product yield and production capacity.

[0037] like Figures 1 to 4 As shown, the method for preparing the pixel definition layer of the silicon-based Micro OLED micro display device includes the following steps:

[0038] S1, providing a substrate 100;

[0039] S2, coating, coating an anode film 200 on the substrate 100;

[0040] During the coating process, a PVD (Physical Vapor Deposition) process is used. The anode film 200 prepared by PVD has excellent thickness uniformity.

[0041] S3, etching, etching the anode film 200 to form an anode pattern 300;

[0042] S4, leveling, using a photosensitive material to perform leveling treatment on the substrate 100 to form a photosensitive film layer 400, and the photosensitive film layer 400 wraps the anode pattern 300;

[0043] S5 , exposure and development, exposing and developing the substrate 100 to remove a portion of the photosensitive film layer 400 , and expose the anode pattern 300 , and the height of the anode pattern 300 is flush with the height of the photosensitive film layer 400 .

[0044] During implementation, after exposure using PDL MASK (pixel definition layer mask), the substrate 100 is transferred into a developing cup, and the photosensitive material is etched on the entire surface using weak alkali until the anode pattern 300 is exposed and flush with the height of the photosensitive film layer 400.

[0045] The above-mentioned preparation method uses a photosensitive material to perform leveling treatment on the substrate 100, which can level the pits of the anode pattern 300, which is beneficial to the subsequent process. In addition, the preparation method only uses a photolithography machine to complete the steps required for leveling and pattern preparation, reducing the frequency of use of dry etching and degumming machines. There are fewer process steps, which is conducive to improving product yield and production capacity.

[0046] Optionally, before coating, the substrate 100 needs to be cleaned and dried to remove impurities such as particles on the surface of the substrate 100 .

[0047] In this embodiment, during leveling, the leveling method used is spin coating. During spin coating, the glue drop amount is 1ml-2ml, and the rotation speed is 2800 rpm-3200 rpm. This setting makes the surface of the coated photosensitive film layer 400 flat. Optionally, during leveling, the photosensitive material used is photosensitive polyimide, which can be retained in the product as a functional layer and has high resolution and excellent leveling properties.

[0048] Preferably, the exposure and development time does not exceed 30s, and the exposure amount is 2800J / ㎡-3200J / ㎡. After exposure and development, the substrate 100 needs to be rinsed and dried. The cleaning is done with pure water at a speed of 500rpm-700rpm. The line width of the pixel definition layer prepared using the above parameters is less than 0.9μm, the taper is less than 38°, and the anode step difference with the anode pattern 300 is less than 1800nm, with excellent morphology.

[0049] The silicon-based Micro OLED micro-display device pixel definition layer provided in this embodiment is made according to the above-mentioned method for preparing the silicon-based MicroOLED micro-display device pixel definition layer. In the pixel definition layer, the anode slope angle of the anode pattern 300 is small, which effectively solves the problem of cathode breakage at this point when the device is operating.

[0050] The display panel provided in this embodiment includes the above-mentioned silicon-based Micro OLED micro-display device pixel definition layer and has good reliability in use.

[0051] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device, characterized in that: Includes steps: Providing a substrate (100); Film coating, coating an anode film (200) on the substrate (100); Etching: etching the anode film (200) to form an anode pattern (300); Leveling, using a photosensitive material to perform leveling treatment on the substrate (100) to form a photosensitive film layer (400), wherein the photosensitive film layer (400) wraps the anode pattern (300); Exposure and development: the substrate (100) is exposed and developed to remove a portion of the photosensitive film layer (400) and expose the anode pattern (300), with the height of the anode pattern (300) being flush with the height of the photosensitive film layer (400).

2. The method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device according to claim 1, characterized in that: Before the coating, the substrate (100) needs to be cleaned and dried.

3. The method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device according to claim 1, characterized in that: During the leveling process, the photosensitive material used is photosensitive polyimide.

4. The method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device according to claim 1, characterized in that: During the leveling process, the leveling method adopted is spin coating.

5. The method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device according to claim 4, characterized in that: During the leveling process, the glue dripping amount is 1 ml to 2 ml, and the rotation speed is 2800 rpm to 3200 rpm.

6. The method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device according to claim 4, characterized in that: The exposure and development time does not exceed 30s, and the exposure amount is 2800J / ㎡-3200J / ㎡.

7. The method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device according to claim 1, characterized in that: After the exposure and development, the substrate (100) needs to be rinsed and dried.

8. The method for preparing a pixel definition layer of a silicon-based Micro OLED micro-display device according to claim 7, characterized in that: The cleaning is performed using pure water, and the cleaning rotation speed is 500rpm-700rpm.

9. A silicon-based Micro OLED micro-display device pixel definition layer, characterized in that: It is made according to the method for preparing a pixel definition layer of a silicon-based Micro OLED micro display device as described in any one of claims 1 to 8.

10. A display panel, characterized in that It comprises the silicon-based Micro OLED micro-display device pixel definition layer as described in claim 9.

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