Reconfigurable photoelectric structure based on ion migration and manufacturing method thereof

Abstract

The invention relates to a reconfigurable photoelectric structure based on ion migration and a manufacturing method thereof. The reconfigurable photoelectric structure comprises a substrate, a semiconductor dielectric layer, a metal-semiconductor interface, a metal electrode, a compatible connecting end and a passivation layer, the reconfigurable structure is characterized in that a semiconductor dielectric layer is arranged on a substrate, and one end of the semiconductor dielectric layer is connected with a metal electrode through a semiconductor-metal interface; the other end of the semiconductor dielectric layer serves as a compatible connecting end; and the passivation layer covers the semiconductor dielectric layer. According to the memristor, the energy band structure is remarkably changed through introduction of the high-valence metal cations, the memristor has good compatibility with circuit integration in structure and process, a new idea is provided for design and application of the memristor, and the wide application prospect of the memristor in bionic neural networks and complex calculation tasks is shown.

Description

Technical Field

[0001] The invention relates to the field of photoelectric detection technology, in particular to a reconfigurable photoelectric structure based on ion migration and a manufacturing method thereof. Background Art

[0002] Modern electronic processing units generally adopt the von Neumann architecture, the basic feature of which is the separation of storage units from computing modules. Although this design has achieved certain success in early computers, its inherent defects have gradually emerged with the development of technology, including equipment redundancy, data transmission delays, and high energy consumption. These limitations not only reduce processing efficiency, but also form bottlenecks in the expanding fields of artificial intelligence and automation. To meet this challenge, researchers are actively exploring new transistor architectures. Reconfigurable transistors, as an innovative device with the ability to adjust dynamic conductance and polarity states, can significantly reduce the number of devices required to implement complex logical functions. Especially in bionic neural networks, this transistor architecture has shown excellent performance and can efficiently perform diverse tasks such as learning, classification, and recognition, promoting intelligent computing to a higher level.

[0003] Two-dimensional materials have shown significant advantages in micro-semiconductor devices due to their thin thickness, large specific surface area, strong photoelectric interaction and flexibility. Although two-dimensional material photonic memristors have shown great potential in neuromorphic computing, most existing devices still rely on electron migration, resulting in short storage time. Although designs based on gate capture layers have been explored, complex circuits are still required in practical applications to simulate synaptic behavior. In addition, structures based on hole migration do not have obvious effects on band regulation. Summary of the invention

[0004] The purpose of the present invention is to provide a reconfigurable optoelectronic structure based on ion migration, which mainly solves the problems existing in the above-mentioned prior art. It significantly changes the band structure by introducing high-valent metal cations, and has good compatibility with circuit integration in structure and process, provides new ideas for the design and application of memristors, and shows its broad application prospects in bionic neural networks and complex computing tasks.

[0005] In order to achieve the above object, the technical solution of the present invention is:

[0006] A reconfigurable optoelectronic structure based on ion migration, comprising a substrate, a semiconductor dielectric layer, a metal-semiconductor interface, a metal electrode, a compatible connection terminal, and a passivation layer, characterized in that:

[0007] The reconfigurable structure is as follows: a semiconductor dielectric layer is provided on the substrate, one end of the semiconductor dielectric layer is connected to the metal electrode via a semiconductor-metal interface; the other end of the semiconductor dielectric layer is used as a compatible connection end; and the passivation layer covers the semiconductor dielectric layer.

[0008] The reconfigurable optoelectronic structure based on ion migration is characterized in that the material of the substrate is silicon dioxide, silicon nitride, aluminum oxide or polyethylene naphthalate.

[0009] The reconfigurable optoelectronic structure based on ion migration is characterized in that the material of the semiconductor dielectric layer is intrinsic or doped WSe2, which serves as a light absorption layer, carrier and ion transport medium layer, and has a thickness range of 10nm to 200nm.

[0010] The reconfigurable optoelectronic structure based on ion migration is characterized in that the material of the metal electrode is Au or Pd or Ag or Pt. The thickness of the metal electrode ranges from 10nm to 80nm.

[0011] The reconfigurable optoelectronic structure based on ion migration is characterized in that the metal-semiconductor interface is naturally formed during the metal electrode evaporation process. The specific process is that when the metal electrode is evaporated at a high speed, the metal atoms are destroyed and embedded in the surface of the semiconductor dielectric layer.

[0012] The reconfigurable optoelectronic structure based on ion migration is characterized in that the metal ions in the metal-semiconductor interface can migrate to the semiconductor dielectric layer under voltage pulse modulation, thereby forming a metal ion gradient distribution in the semiconductor dielectric layer, and the metal ion concentration can be adjusted in the range of 0 to 4%.

[0013] The reconfigurable optoelectronic structure based on ion migration is characterized in that the compatible connection end is a metal material or a semiconductor device structure to form devices with different functions.

[0014] The reconfigurable optoelectronic structure based on ion migration is characterized in that the compatible connecting end can be directly made of metal material and prepared simultaneously with the electrode at the other end of the semiconductor dielectric layer.

[0015] The reconfigurable optoelectronic structure based on ion migration is characterized in that the material of the passivation layer is aluminum oxide or hexagonal boron nitride or silicon dioxide or silicon nitride, and its thickness ranges from 1 nm to 60 nm.

[0016] A method for manufacturing a reconfigurable optoelectronic structure based on ion migration as described above is characterized in that it comprises the following steps:

[0017] A. On the substrate, mechanically peel off from bulk WSe2 and use PDMS to assist in transferring a 10nm to 200nm thick WSe2 semiconductor dielectric layer;

[0018] B. Materials or structures designed for compatible connectors prepared based on micro-nano processing technology;

[0019] C. Define the electrode positions at both ends of the semiconductor dielectric layer based on the standard photolithography process and The metal material is evaporated at a high rate, so that the thickness of the metal electrode ranges from 10nm to 80nm;

[0020] D. During high-speed evaporation of metal electrodes, metal ions destroy and embed into the surface of the semiconductor dielectric layer, forming a metal-semiconductor interface;

[0021] E. Grow 1nm to 60nm of insulating material as a passivation layer on the above structure, or cover it with several layers of hexagonal boron nitride by mechanical transfer method.

[0022] The present invention proposes a two-terminal multi-state memristor based on the metal ion migration mechanism. By introducing metal ions into WSe2 and regulating their migration using voltage pulses, a junction with slow-changing characteristics is formed. This process induces significant changes in the band structure, achieves reversible regulation of the conductance state and polarity, and promotes the conversion of the photoconductive mode to the photovoltaic mode.

[0023] The invention shows the following four advantages:

[0024] (1) The natural introduction process of metal ions is compatible with the circuit and does not require additional processing steps.

[0025] (2) Metal ions can migrate across tens of microns in semiconductor dielectric layers, regulating material properties over a large geometric range.

[0026] (3) High-valent metal cations can significantly change the energy band structure, thereby significantly improving the device's rectification effect and the control range of the photogenerated electromotive force.

[0027] (4) The nonvolatile nature of the ion migration mechanism enhances the device’s spatiotemporal resolution and can be used as a neuromorphic device to simulate biological behavior. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the structural cross section of the present invention;

[0029] Figure 2 This is the structure adopted in the embodiment of the present invention, which directly uses the metal electrode as the compatible connection terminal.

[0030] Figure 3 It is the effect of changing the conductance state by voltage pulse modulation in the embodiment of the present invention, and the ordinate is the ordinary coordinate.

[0031] Figure 4 It is the effect of the change of the voltage pulse modulation rectification state in the embodiment of the present invention, and the vertical axis is a logarithmic coordinate.

[0032] Figure 5 3 is a comparison diagram of the photocurrent and the dark current in the photoconductive state in an embodiment of the present invention, and the ordinate is a logarithmic coordinate.

[0033] Figure 6 3 is a comparison diagram of photocurrent and dark current in the photovoltaic state in an embodiment of the present invention, and the ordinate is a logarithmic coordinate. DETAILED DESCRIPTION

[0034] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall within the scope limited by the appended claims of the application equally.

[0035] See also Figure 1 The present invention discloses a reconfigurable optoelectronic structure based on ion migration. As shown in the figure: it includes a substrate 1, a semiconductor dielectric layer 2, a metal-semiconductor interface 3, a metal electrode 4, a compatible connection terminal 5, and a passivation layer 6.

[0036] The reconfigurable structure is as follows: a semiconductor dielectric layer 2 is provided on a substrate 1, one end of the semiconductor dielectric layer 2 is connected to a metal electrode 4 via a semiconductor-metal interface 3; the other end of the semiconductor dielectric layer 2 serves as a compatible connection end 5; and the passivation layer 6 covers the semiconductor dielectric layer 2.

[0037] In the present invention, the material of the substrate 1 is silicon dioxide, silicon nitride, aluminum oxide or polyethylene naphthalate.

[0038] In the present invention, the material of the semiconductor dielectric layer 2 is intrinsic or doped WSe2, which serves as a light absorption layer and a carrier transport dielectric layer, and has a thickness ranging from 10 nm to 200 nm.

[0039] In the present invention, the metal electrode 4 is The thickness of the metal electrode 4 is in the range of 10 nm to 80 nm by evaporation at a rate of 100 nm.

[0040] In the present invention, the metal-semiconductor interface 3 is naturally formed during the evaporation process of the metal electrode 4. The specific process is: when the metal electrode 4 is evaporated at a high speed, metal ions destroy and embed into the surface of the semiconductor dielectric layer 2.

[0041] In the present invention, the metal ions in the metal-semiconductor interface 3 can migrate to the semiconductor dielectric layer 2 under voltage pulse modulation, thereby forming a metal ion gradient distribution in the semiconductor dielectric layer 2, and the metal ion concentration can be adjusted in the range of 0-4%.

[0042] In the present invention, the compatibility connection end 5 is made of metal material or semiconductor device structure to form devices with different functions.

[0043] In the present invention, the compatible connecting end 5 can be directly made of metal material and prepared simultaneously with the electrode at the other end of the semiconductor dielectric layer 2 (such as Figure 2 ).

[0044] In the present invention, the material of the passivation layer 6 is aluminum oxide or hexagonal boron nitride or silicon dioxide or silicon nitride, and the thickness thereof ranges from 1 nm to 60 nm.

[0045] The present invention also discloses a method for manufacturing a reconfigurable optoelectronic structure based on ion migration as described above, which comprises the following steps:

[0046] A. On substrate 1, mechanically peel off from bulk WSe2 and use PDMS to assist in transferring a 10nm to 200nm thick WSe2 semiconductor dielectric layer 2;

[0047] B. Materials or structures designed for preparing the compatible connection end 5 based on micro-nano processing technology;

[0048] C. Based on the standard photolithography process, the electrode positions are defined at both ends of the semiconductor dielectric layer 2, and electron beam evaporation is used to form a The metal material is evaporated at a rate such that the thickness of the metal electrode 4 reaches a range of 10 nm to 80 nm;

[0049] D. During the high-speed evaporation of the metal electrode 4, the metal ions destroy and embed into the surface of the semiconductor dielectric layer 2, forming a metal-semiconductor interface 3;

[0050] E. Grow an insulating material with a thickness of 1 nm to 60 nm on the above structure as a passivation layer 6, or cover it with several layers of hexagonal boron nitride by mechanical transfer method.

[0051] The following uses Figure 2 The structure of is used as an embodiment to further introduce the present invention:

[0052] See attached Figure 2 A Pd electrode located at one end of the semiconductor dielectric layer 2 is used as a compatible connection terminal to obtain a reconfigurable optoelectronic device based on ion migration in this embodiment. The device includes a substrate 1, a semiconductor dielectric layer 2, a Pd metal electrode 3, a metal-semiconductor interface 4, and a passivation layer 6.

[0053] The method for manufacturing the reconfigurable optoelectronic device based on ion migration comprises the following steps:

[0054] On a silicon dioxide substrate, a 40 nm thick WSe2 semiconductor dielectric layer was mechanically exfoliated from bulk WSe2 and transferred using PDMS-assisted transfer.

[0055] Based on the standard photolithography development process, the electrode positions are defined at both ends of the semiconductor dielectric layer, and Pd metal is evaporated at a rate of 0.4A / s using electron beam evaporation, with an acceleration voltage range of 350V-800V, so that the thickness of the Pd metal electrode reaches 20nm;

[0056] When the Pd metal electrode is evaporated at a high speed, the Pd metal ions destroy and embed into the surface of the semiconductor dielectric layer to form a metal-semiconductor interface;

[0057] A 10 nm thick hexagonal boron nitride layer was transferred onto the above structure by dry method as a passivation layer.

[0058] Figure 3 This is the effect of changing the conductivity state by voltage pulse modulation in the embodiment of the present invention. After 5V, 1s voltage pulse modulation, the conductivity of the device changes by about 5 times.

[0059] Figure 4 This is the effect of the change in the rectification state of the voltage pulse modulation in the embodiment of the present invention. After 20V voltage pulse modulation, the rectification ratio of the device can reach about 3 orders of magnitude, and the polarity change can be achieved by controlling the pulse direction.

[0060] Figure 5 It is a comparison diagram of the photocurrent and the dark current in the photoconductive state in an embodiment of the present invention. The device exhibits properties similar to those of a photoconductive device, with no photoinduced electromotive force and short-circuit current.

[0061] Figure 6 This is a comparison diagram of photocurrent and dark current in the photovoltaic state in an embodiment of the present invention. The photoelectric electromotive force of the device can reach 0.5V.

[0062] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A reconfigurable optoelectronic structure based on ion migration, comprising a substrate (1), a semiconductor dielectric layer (2), a metal-semiconductor interface (3), a metal electrode (4), a compatible connection terminal (5), and a passivation layer (6), characterized in that: The reconfigurable structure comprises: a semiconductor dielectric layer (2) on a substrate (1); one end of the semiconductor dielectric layer (2) is connected to a metal electrode (4) via a semiconductor-metal interface (3); the other end of the semiconductor dielectric layer (2) serves as a compatible connection end (5); and the passivation layer (6) covers the semiconductor dielectric layer (2).

2. The reconfigurable optoelectronic structure based on ion migration according to claim 1, characterized in that: The material of the substrate (1) is silicon dioxide, silicon nitride, aluminum oxide or polyethylene naphthalate.

3. The reconfigurable optoelectronic structure based on ion migration according to claim 1, characterized in that: The material of the semiconductor medium layer (2) is intrinsic or doped WSe2, which serves as a light absorption layer, a carrier and ion transmission medium layer, and has a thickness ranging from 10 nm to 200 nm.

4. The reconfigurable optoelectronic structure based on ion migration according to claim 1, characterized in that: The material of the metal electrode (4) is Au, Pd, Ag or Pt. The thickness of the metal electrode (4) is in the range of 10 nm to 80 nm.

5. The reconfigurable optoelectronic structure based on ion migration according to claim 4, characterized in that: The metal-semiconductor interface (3) is naturally formed during the evaporation process of the metal electrode (4). The specific process is as follows: when the metal electrode (4) is evaporated at a high speed, metal atoms are destroyed and embedded in the surface of the semiconductor dielectric layer (2).

6. The reconfigurable optoelectronic structure based on ion migration according to claim 1, characterized in that: The metal ions in the metal-semiconductor interface (3) can migrate to the semiconductor dielectric layer (2) under voltage pulse modulation, thereby forming a metal ion gradient distribution in the semiconductor dielectric layer (2), and the metal ion concentration can be adjusted in the range of 0 to 4%.

7. The reconfigurable optoelectronic structure based on ion migration according to claim 1, characterized in that: The compatible connection end (5) is made of metal material or a semiconductor device structure to form devices with different structures and functions.

8. The reconfigurable optoelectronic structure based on ion migration according to claim 7, characterized in that: The compatible connection end (5) is directly made of a metal material and is prepared simultaneously with the metal electrode (4) at the other end of the semiconductor dielectric layer (2).

9. The reconfigurable optoelectronic structure based on ion migration according to claim 1, characterized in that: The material of the passivation layer (6) is aluminum oxide or hexagonal boron nitride or silicon dioxide or silicon nitride, and its thickness ranges from 1 nm to 60 nm.

10. A method for manufacturing a reconfigurable optoelectronic structure based on ion migration as claimed in claim 1, characterized in that: It includes the following steps, A. On a substrate (1), mechanically peeling off bulk WSe2 and using PDMS to assist in transferring a 10 nm to 200 nm thick WSe2 semiconductor dielectric layer (2); B. Materials or structures designed for preparing the compatible connection end (5) based on micro-nano processing technology; C. Based on the standard photolithography and development process, the electrode positions are defined at both ends of the semiconductor dielectric layer (2), and Evaporating a metal electrode at a rate such that the thickness of the metal electrode (4) reaches a range of 10 nm to 80 nm; D. During high-speed evaporation of the metal electrode (4), the metal cations destroy and embed into the surface of the semiconductor dielectric layer (2), forming a metal-semiconductor interface (3); E. Grow an insulating material with a thickness of 1 nm to 60 nm on the above structure as a passivation layer (6), or cover it with several layers of hexagonal boron nitride by mechanical transfer.

Images