Optoelectronic module and method for producing optoelectronic module

Abstract

The invention relates to an optoelectronic module (1) comprising a housing body (20) having a main chamber (200). Furthermore, the optoelectronic module (1) comprises a dam-shaped structure (30). The dam structure (30) divides the main chamber (200) into a first sub-chamber (210) and a second sub-chamber (220). A first semiconductor device (11) is arranged in the first sub-chamber (210). A second semiconductor device (12) is disposed in the second sub-chamber (220). There is a boundary surface (30A) between the dam (30) and the housing body (20). The invention further relates to a method for producing an optoelectronic module (1).

Description

Technical Field

[0001] An optoelectronic module and a method for producing an optoelectronic module are provided. The optoelectronic module is configured in particular to generate or detect electromagnetic radiation, for example light perceptible to the human eye. Summary of the invention

[0002] The object to be achieved is to specify an optoelectronic module having a plurality of chambers.

[0003] A further object to be achieved is to specify a method for producing an optoelectronic module having a plurality of chambers.

[0004] These objects are achieved by means of a device and a method according to the independent claims. Advantageous embodiments and developments of the device and the method are the subject matter of the dependent claims and also emerge from the following description and the drawings.

[0005] According to at least one embodiment, the optoelectronic module comprises a housing body having a main chamber. The housing body is formed, for example, by means of a material suitable for processing by molding, in particular by means of polysiloxane, epoxy or thermoplastic. For example, the polysiloxane is silicone. The main chamber comprises side surfaces and a bottom surface. The bottom surface is oriented, for example, parallel to a main extension plane of the housing body.

[0006] According to at least one embodiment, the optoelectronic module comprises a dam-shaped structure. The dam-shaped structure is a separate element relative to the housing body. The housing body and the dam-shaped structure are manufactured in separate method steps. The dam-shaped structure preferably extends from the side of the main chamber to the opposite side in the transverse direction. The lateral direction applies here and below to the direction parallel to the main extension plane of the housing body. Similarly, the vertical direction applies here and below to the direction transverse to, in particular perpendicular to, the main extension plane of the housing body.

[0007] The dam-shaped structure extends in the vertical direction from the bottom surface of the main chamber at least to the connecting line. In addition, the dam-shaped structure extends in the vertical direction from the bottom surface of the main chamber up to the upper edge of the main chamber. In particular, the dam-shaped structure extends in the vertical direction at least to the upper edge of the first and / or second semiconductor device. In other words, the vertical extension of the dam-shaped structure is greater than or equal to the vertical extension of the first and / or second semiconductor device. Alternatively, the vertical extension of the dam-shaped structure just corresponds to the vertical extension of the first and / or second semiconductor device.

[0008] The dam-shaped structure is formed, for example, by means of polysiloxane, epoxy or thermoplastic. In particular, the dam-shaped structure comprises a wavelength conversion material and is configured to convert electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength. Alternatively, the dam-shaped structure is implemented translucently, in particular transparently. In other embodiments, the dam-shaped structure is reflective or absorptive.

[0009] According to at least one embodiment of the optoelectronic module, the dam-shaped structure divides the main chamber into a first sub-chamber and a second sub-chamber. The first and second sub-chambers are separated in the lateral direction by the dam-shaped structure. The first and second sub-chambers are respectively bounded by the dam-shaped structure and the side of the main chamber in their lateral extension.

[0010] According to at least one embodiment of the optoelectronic module, a first semiconductor component is arranged in the first subchamber. The first semiconductor component is configured, for example, to control a further semiconductor component.

[0011] According to at least one embodiment of the optoelectronic module, a second semiconductor component is arranged in the second subchamber. The second semiconductor component is in particular configured to emit or detect electromagnetic radiation.

[0012] According to at least one embodiment of the optoelectronic module, there is a boundary surface between the dam-shaped structure and the housing body. The boundary surface is characterized in particular by the fact that the degree of crosslinking, transmittance, optical refractive index or density of the material in the boundary surface is different from the surrounding solid material inside the housing body or the dam-shaped structure.

[0013] According to at least one embodiment, an optoelectronic module comprises:

[0014] - a housing body having a main chamber, and

[0015] - Dam-shaped structure, where

[0016] - The dam-shaped structure divides the main chamber into a first sub-chamber and a second sub-chamber,

[0017] - a first semiconductor device is arranged in the first sub-chamber,

[0018] A second semiconductor device is arranged in the second sub-chamber, and

[0019] A boundary surface exists between the dam-shaped structure and the housing body.

[0020] The optoelectronic module described here is based in particular on the following concept:

[0021] A housing body suitable for a plurality of semiconductor components, a so-called multi-die housing, comprises a plurality of chambers electrically connected to one another. For example, in such a housing body, light-emitting diodes and control elements or additional photodiodes are arranged in different chambers. The electrical connection between the different components can be made on the second plane, for example, via printed conductors or lead frames or by vertically stacking a plurality of components. These methods may require more space due to the second plane and are particularly technically demanding, since these methods require a monolithically integrated circuit with multiple layers or a stack of different components.

[0022] The optoelectronic module described here requires, in particular, the concept that a plurality of semiconductor components are first placed next to one another in a main chamber of a housing body and that the main chamber is divided into a plurality of subchambers by a dam-shaped structure in a further method step. Before the dam-shaped structure is introduced, the semiconductor components can be electrically conductively connected by means of connecting lines using wire bonding. In this way, an optoelectronic module is produced with a plurality of semiconductor components electrically connected to one another, each of which is arranged in its own chamber. Advantageously, the light extraction and / or the mechanical stability of the optoelectronic module can thus be improved.

[0023] According to at least one embodiment of the optoelectronic module, the dam-shaped structure is formed by a material different from the material of the housing body. For example, the dam-shaped structure is formed by a material softer than the housing body. Advantageously, the design freedom for the optoelectronic module is increased. More advantageously, the dam-shaped structure can be introduced only after the semiconductor device is assembled.

[0024] According to at least one embodiment of the optoelectronic module, the angle between the dam-shaped structure and the housing body is at most 90°. The angle is measured from outside the dam-shaped structure. For example, the dam-shaped structure has an undercut. The undercut refers here and hereinafter to a dam-shaped structure in which the cross section increases starting from the bottom surface of the housing body in the direction of the upper edge of the main chamber. The undercut can have an advantageous optical effect. In addition, the undercut can achieve an improved retention of subsequent structures at the dam-shaped structure. For example, the dam-shaped structure has a convex surface. In particular, the dam-shaped structure is formed in the form of a droplet of liquid on a hydrophobic surface. In other words, the dam-shaped structure preferably has the shape of a sphere with flattened sides.

[0025] According to at least one embodiment of the optoelectronic module, the connecting line electrically conductively connects the first semiconductor component to the second semiconductor component. The connecting line is, for example, a bonding wire. Preferably, the connecting line is formed by means of a metal or a metal alloy.

[0026] According to at least one embodiment of the optoelectronic module, the connecting line extends at least partially through the dam-shaped structure. In other words, the connecting line is at least partially completely embedded in the dam-shaped structure. This allows a particularly compact design of the optoelectronic module. Advantageously, the connecting line is mechanically protected by the dam-shaped structure.

[0027] According to at least one embodiment of the optoelectronic module, the dam-shaped structure comprises a base body and a separator. The base body is formed in particular by means of a material different from that of the separator. For example, the separator is formed to be radiation-transmissive and the base is formed to be radiation-impermeable. In addition, the materials of the base body and the separator can also be selected in view of their desired mechanical properties.

[0028] According to at least one embodiment of the optoelectronic module, the material of the base body has a higher E modulus than the material of the separating body. Advantageously, the separating body is softer so that, for example, connecting lines can be better protected, while the harder base body of the dam-shaped structure provides sufficient mechanical stability.

[0029] According to at least one embodiment of the optoelectronic module, the first semiconductor component comprises an integrated circuit and the second semiconductor component is configured to emit or detect electromagnetic radiation. The spatial separation between the semiconductor components enables an optimal operating environment for both types of semiconductor components.

[0030] According to at least one embodiment of the optoelectronic module, a plurality of second semiconductor devices are arranged in the second subchamber. In particular, the semiconductor devices are configured to emit electromagnetic radiation of different main wavelengths. As the main wavelength, the following wavelength applies here and hereinafter, at which the emission spectrum has a global intensity maximum. Preferably, the second semiconductor device is configured to emit electromagnetic radiation with a main wavelength in the red spectral range. For example, the second semiconductor device is configured to emit electromagnetic radiation with a main wavelength in the green spectral range. Advantageously, the second semiconductor device is configured to emit electromagnetic radiation with a main wavelength in the blue spectral range. Preferably, three semiconductor devices are arranged in the second subchamber, and the semiconductor devices together constitute an RGB tricolor group (RGB-Tripel), and the RGB tricolor group is configured to emit colored mixed radiation.

[0031] According to at least one embodiment of the optoelectronic module, the first subchamber is filled with a first filling material. For example, the upper side of the first semiconductor component facing away from the housing body is at least partially covered with the first filling material. Advantageously, the first semiconductor component is completely covered by the first filling material. The first semiconductor component can be particularly well protected from external environmental influences by the first filling material.

[0032] According to at least one embodiment of the optoelectronic module, the second subchamber is filled with a second filling material. For example, the upper side of the second semiconductor component facing away from the housing body is at least partially covered with the second filling material. Advantageously, the second semiconductor component is completely covered by the second filling material. The second semiconductor component can be particularly well protected from external environmental influences by the second filling material.

[0033] According to at least one embodiment, the first filling material and the second filling material are formed by means of different materials. Advantageously, the filling materials can be precisely matched to the intended application in the respective chamber. For example, the first filling material has a lower optical radiation permeability than the second filling material. In particular, the first filling material has a higher thermal conductivity than the second filling material. Thus, unimpeded transmission of electromagnetic radiation from and to the second semiconductor component and particularly good heat dissipation of the first semiconductor component can be ensured.

[0034] According to at least one embodiment of the optoelectronic module, the first subchamber is filled with the material of the dam-shaped structure. This allows an advantageously simple encapsulation of the first semiconductor component. Thermal stresses between the dam-shaped structure and the filled region can be reduced or avoided.

[0035] According to at least one embodiment of the optoelectronic module, the second subchamber is filled with the material of the dam-shaped structure. This allows for an advantageously simple encapsulation of the second semiconductor component. Thermal stresses between the dam-shaped structure and the filled region can be reduced or avoided.

[0036] According to at least one embodiment of the optoelectronic module, the first semiconductor component extends from the first subchamber to the second subchamber via the dam-shaped structure. This results in an advantageously simple construction of the optoelectronic module.

[0037] According to at least one embodiment of the optoelectronic module, the second semiconductor component is at least partially embedded in the first semiconductor component. Advantageously, this results in particularly simple production, since only the first semiconductor component must be introduced into the main chamber. The lateral orientation of the first and second semiconductor components relative to each other is simplified, since the first and second semiconductor components are already arranged fixedly relative to each other.

[0038] In accordance with at least one embodiment of the optoelectronic module, the dam-shaped structure is arranged at least in places on the first semiconductor component.

[0039] In particular, the dam-shaped structure extends at least partially over the first semiconductor component. In particular, less material is required for the dam-shaped structure.

[0040] According to at least one embodiment of the optoelectronic module, the dam-shaped structure is arranged in the main chamber of the housing body, so that the main chamber is divided into a first sub-chamber, a second sub-chamber, a third sub-chamber and a fourth sub-chamber. The dam-shaped structure has, for example, a cross shape in a top view of the optoelectronic module. Advantageously, a plurality of different semiconductor devices can be arranged in their own sub-chambers.

[0041] According to at least one embodiment of the optoelectronic module, the housing body comprises a protrusion, which extends between the first subchamber and the second subchamber. The protrusion is preferably formed by means of the material of the housing body. In particular, a dam-shaped structure is arranged on the protrusion. In other words, the protrusion forms, for example, a base body for the dam-shaped structure. In particular, a boundary surface is present between the dam-shaped structure and the protrusion in the housing body. Advantageously, the lateral position of the dam-shaped structure, which is subsequently applied, can already be determined by the protrusion during the manufacture of the housing body. In particular, the protrusion limits the lateral extension of the dam-shaped structure.

[0042] A method for producing an optoelectronic module is also provided. The optoelectronic module can be produced in particular by means of the method described here. That is to say, all features disclosed in conjunction with the optoelectronic module are also disclosed for the method for producing the optoelectronic module, and vice versa.

[0043] According to at least one embodiment of the method for producing an optoelectronic module, a housing body having a main chamber is provided. The housing body is preferably produced by means of a molding method.

[0044] According to at least one embodiment of the method for producing an optoelectronic module, the first semiconductor component and the second semiconductor component are arranged in a main chamber. Advantageously, the arrangement of the semiconductor components in the main chamber is simplified before the dam-shaped structure is introduced.

[0045] According to at least one embodiment of the method for producing an optoelectronic module, a dam-shaped structure is introduced into the main chamber so that the main chamber is divided into a first subchamber and a second subchamber. The dam-shaped structure is introduced into the main chamber so that the first semiconductor component is arranged in the first subchamber and the second semiconductor component is arranged in the second subchamber. The dam-shaped structure is produced in particular in a separate method step.

[0046] According to at least one embodiment of the method for producing an optoelectronic module, the method comprises the following steps:

[0047] - providing a housing body having a main chamber,

[0048] - placing a first semiconductor device and a second semiconductor device in the main chamber,

[0049] A dam-shaped structure is introduced into the main chamber, so that the main chamber is divided into a first sub-chamber and a second sub-chamber, wherein the first semiconductor component is arranged in the first sub-chamber and the second semiconductor component is arranged in the second sub-chamber.

[0050] Preferably, the method steps are performed in the order given here.

[0051] According to at least one embodiment of the method for producing an optoelectronic module, a connecting line is provided before the introduction of the dam-shaped structure, which connecting line electrically conductively connects the first semiconductor component to the second semiconductor component.

[0052] The connecting lines are produced in particular by means of wire bonding. Before the dam-shaped structure is provided, the provision of the connecting lines is advantageously facilitated.

[0053] According to at least one embodiment of the method for producing an optoelectronic module, the base body of the dam-shaped structure is introduced into the main chamber before the separator of the dam-shaped structure. The multi-part dam-shaped structure can be particularly well adapted to the desired application purpose. For example, a radiation-transmissive separator can be placed on a radiation-impermeable base body. In particular, the lateral extension of the separator is limited by the lateral extension of the base body.

[0054] According to at least one embodiment of the method for producing an optoelectronic module, the dam-shaped structure is deposited by means of glue dispensing. The dam-shaped structure is preferably produced by means of a thixotropic or particularly viscous material. Thixotropic materials advantageously allow particularly simple deposition of the material by glue dispensing.

[0055] According to at least one embodiment of the method for producing an optoelectronic module, the dam-shaped structure is produced by means of an additive manufacturing method. The use of an additive manufacturing method allows a particularly high degree of design freedom for the shape of the dam-shaped structure.

[0056] According to at least one embodiment of the method for producing an optoelectronic module, the dam-shaped structure is produced by means of a photolithographic method. The photolithographic method allows a particularly large number of modules to be produced in parallel method steps. In addition, a particularly precise production of the dam-shaped structure is possible. Positive resists can be used to produce the dam-shaped structure, and positive resists can also be used.

[0057] The optoelectronic module described here is suitable, in particular, for use in components having a plurality of highly integrated functions, for example in vital sign sensors or intelligent light sources.

[0058] Further advantages and advantageous embodiments and developments of the optoelectronic module will be found in the following description in conjunction with the exemplary embodiments shown in the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] The accompanying drawings show:

[0060] Figure 1A and Figure 1B shows schematic sectional views of an optoelectronic module according to a first exemplary embodiment described here in different steps of a method for producing the same;

[0061] Figure 2 shows a schematic sectional view of an optoelectronic module according to a second exemplary embodiment described here;

[0062] Figure 3 shows a schematic sectional view of an optoelectronic module according to a third exemplary embodiment described here;

[0063] Figure 4 shows a schematic sectional view of an optoelectronic module according to a fourth exemplary embodiment described here;

[0064] Figure 5 shows a schematic sectional view of an optoelectronic module according to a fifth exemplary embodiment described here;

[0065] Figure 6 shows a schematic sectional view of an optoelectronic module according to a sixth exemplary embodiment described here;

[0066] Fig. 7A and Figure 7B shows schematic sectional views of an optoelectronic module according to a seventh exemplary embodiment described here in different steps of a method for producing the same;

[0067] Figure 8 shows a schematic plan view of an optoelectronic module according to a seventh exemplary embodiment described here;

[0068] Fig. 9 shows a schematic plan view of an optoelectronic module according to an eighth exemplary embodiment described here;

[0069] Fig.10 shows a schematic sectional view of an optoelectronic module according to an eighth exemplary embodiment described here;

[0070] Fig.11 shows a schematic sectional view of an optoelectronic module according to a ninth exemplary embodiment described here; and

[0071] Fig.12 A schematic sectional view of an optoelectronic module according to a tenth exemplary embodiment described here is shown.

[0072] Elements that are identical, of the same type or that function in the same manner are provided with the same reference numerals in the drawings. The drawings and the size relationships of the elements shown in the drawings to one another are not to be regarded as being true to scale. Rather, individual elements may be shown exaggeratedly for better visibility and / or for better understanding. DETAILED DESCRIPTION

[0073] Figure 1A and Figure 1B An optoelectronic module 1 according to a first exemplary embodiment described here is shown in schematic sectional views in different steps of a method for producing the same.

[0074] exist Figure 1A2 shows a housing body 20 having a main chamber 200. The main chamber includes a bottom surface 200X and a side surface 200Y. A first semiconductor device 11 and a second semiconductor device 12 are arranged in the main chamber 200. The first semiconductor device 11 and the second semiconductor device 12 are arranged on the bottom surface 200X of the main chamber 200. The semiconductor devices 11 and 12 are arranged in a common plane.

[0075] The first semiconductor component 11 comprises an integrated circuit and is designed to drive a light emitting diode. The second semiconductor component 12 is configured to emit electromagnetic radiation in the visible spectral range. In particular, the second semiconductor component 12 is a light emitting diode. The semiconductor components 11, 12 each comprise at least one electrode 110 on the side facing away from the housing body 20.

[0076] The first semiconductor component 11 is electrically conductively connected to the second semiconductor component 12 by means of a connecting line 40. The connecting line 40 is a bonding wire and extends from an electrode 110 on the first semiconductor component 11 to an electrode 110 on the second semiconductor component 12.

[0077] exist Figure 1B 2 shows another step of the method for manufacturing an optoelectronic module 1. A dam-shaped structure 30 is provided between the first semiconductor device 11 and the second semiconductor device 12. The dam-shaped structure 30 is provided in the main chamber 200 of the housing body 20, so that the main chamber 200 is divided into a first sub-chamber 210 and a second sub-chamber 220. The dam-shaped structure 30 extends in the vertical direction at least to the upper edge of the first and / or second semiconductor device 11, 12. In other words, the vertical extension of the dam-shaped structure 30 is greater than or equal to the vertical extension of the first and / or second semiconductor device 11, 12.

[0078] The dam-shaped structure 30 extends in the vertical direction starting from the bottom surface 200X of the main chamber 200, in particular at least to the connecting line 40. In addition, the dam-shaped structure 30 extends in the vertical direction starting from the bottom surface 200X of the main chamber 200 up to the upper edge of the main chamber 200. Alternatively, the vertical extension of the dam-shaped structure 30 corresponds to the vertical extension of the first and / or second semiconductor components 11, 12.

[0079] The vertical extension corresponds to the height 30Y of the dam-shaped structure 30 and the lateral extension corresponds to the width 30X of the dam-shaped structure 30. For example, the width 30X of the dam-shaped structure is between 0.5 mm and 2 mm, in particular the width 30X of the dam-shaped structure 30 is 1 mm. For example, the height 30Y of the dam-shaped structure is between 0.25 mm and 1 mm, in particular the height 30Y of the dam-shaped structure 30 is 0.5 mm. The aspect ratio of the dam-shaped structure 30 is preferably 1:2. Here and hereinafter, the aspect ratio applies to the ratio of the height 30Y of the dam-shaped structure 30 to the width 30X of the dam-shaped structure 30.

[0080] A boundary surface 30A is formed between dam-shaped structure 30 and housing body 20 . Boundary surface 30A is characterized in particular by a different degree of crosslinking, transmissivity, optical refractive index or density of the material in boundary surface 30A than the surrounding solid material within housing body 20 or dam-shaped structure 30 .

[0081] The angle α between the dam-shaped structure 30 and the housing body 20 is at most 90°. In other words, the dam-shaped structure 30 and the bottom surface 200X of the main chamber 200 enclose an angle α of at most 90°. The angle α is measured from the outside of the dam-shaped structure 30 at the contact point between the dam-shaped structure 30 and the housing body 20.

[0082] The connecting line 40 extends through the dam-shaped structure 30. In other words, the connecting line 40 is at least partially embedded in the dam-shaped structure 30. Advantageously, the dam-shaped structure 30 mechanically stabilizes the connecting line 40.

[0083] Figure 2 A schematic sectional view of an optoelectronic module 1 according to a second exemplary embodiment described here is shown. The second exemplary embodiment corresponds substantially to the exemplary embodiment described in Figure 1B . Unlike the first embodiment, the dam-shaped structure 30 is implemented in multiple pieces. The dam-shaped structure 30 includes a base 310 and a separation body 320. The base 310 is arranged between the bottom surface 200X of the housing body 20 and the separation body 320. The vertical extension of the base 310 is smaller than the vertical extension of the separation body 320.

[0084] The base body 310 is formed by means of a material different from the material of the separating body 320. For example, the base body 310 is formed by means of a harder material than the separating body 320. In other words, the E modulus of the material of the base body 310 is higher than the E modulus of the material of the separating body 320. Advantageously, the connecting line 40 can be supported mechanically in a targeted manner by the softer separating body 320. In the method for manufacturing, for example, the base body 310 is first applied and hardened and then the separating body 320 is applied and hardened onto the base body 310. Alternatively, before the base body 310 is hardened, the separating body 320 can be applied to the material of the base body 310 and a subsequent step of hardening the base body 310 and the separating body 320 is performed.

[0085] In addition, the base body 310 and the separator 320 may have different optical properties. For example, the base body 310 may be formed by a material that is not transparent to radiation, while the separator 320 may be formed by a material that is transparent to radiation.

[0086] Figure 3 A schematic sectional view of an optoelectronic module 1 according to a third exemplary embodiment described here is shown. The third exemplary embodiment corresponds substantially to the exemplary embodiment described in Figure 2Unlike the second embodiment, the vertical extension of the base body 310 is greater than the vertical extension of the separation body 320 .

[0087] Figure 4 1 shows a schematic sectional view of an optoelectronic module 1 according to a fourth exemplary embodiment described here. The fourth exemplary embodiment corresponds substantially to the Figure 2 . In contrast to the second embodiment, the lateral extension of the separator 320 is greater than the lateral extension of the base body 310. In other words, the dam-shaped structure 30 has an undercut. The separator 320 may also have a convex shape, for example in the form of a droplet or an inflated balloon.

[0088] Figure 5 1 shows a schematic sectional view of an optoelectronic module 1 according to a fifth exemplary embodiment described here. The fifth exemplary embodiment corresponds substantially to the exemplary embodiment described in Figure 1B . In contrast to the first embodiment, the first subchamber 210 is at least partially filled with a first filling material 51. The first filling material 51 is in particular the material of the dam-shaped structure 30. The first subchamber 210 is in particular completely filled with the first filling material 51. The first filling material 51 can be arranged in the first subchamber 210 in multiple steps of the method. For example, the dam-shaped structure 30 is first introduced into the main chamber 200 and hardened. Then, the first subchamber 210 is filled with the additional material of the dam-shaped structure 30. Advantageously, the first semiconductor device 11 is particularly well protected from external environmental influences.

[0089] Furthermore, the second subchamber 220 can also be additionally filled with a second filling material 52. For example, the second subchamber 220 is filled with the material of the dam-shaped structure 30. In particular, the first subchamber 210 and the second subchamber 220 are respectively filled with different materials. Preferably, the second filling material 52 has a higher optical radiation permeability than the first filling material 51. For example, the upper side of the first semiconductor component 11 facing away from the housing body 20 is at least partially covered with the first filling material 51. Advantageously, the first semiconductor component 11 is completely covered by the first filling material 51.

[0090] Figure 6 1 shows a schematic sectional view of an optoelectronic module 1 according to a sixth exemplary embodiment described here. The sixth exemplary embodiment corresponds substantially to the exemplary embodiment described in Figure 1B. In contrast to the first embodiment, the second subchamber 220 is at least partially filled with a second filling material 52. The second filling material 52 corresponds in particular to the material of the dam-shaped structure 30. The second subchamber 220 is preferably completely filled with the second filling material 52. The second filling material 52 can be arranged in the second subchamber 220 in multiple steps of the method. For example, the dam-shaped structure 30 is first introduced into the main chamber 200 and hardened. Subsequently, the second subchamber 220 is filled with the additional material of the dam-shaped structure 30. Advantageously, the second semiconductor device 12 is particularly well protected from external environmental influences in this way.

[0091] Furthermore, the first sub-chamber 210 is additionally filled with the first filling material 51, as in Figure 5 Preferably, the upper side of the second semiconductor component 12 facing away from the housing body 20 is at least partially covered with the second filling material 52. Advantageously, the second semiconductor component 12 is completely covered by the second filling material 52.

[0092] Fig. 7A 7C show schematic sectional views of an optoelectronic module 1 according to a seventh exemplary embodiment described here in different steps of a method for producing the same. The seventh exemplary embodiment corresponds substantially to the embodiment described in Figure 1B Unlike the first embodiment, the optoelectronic module 1 comprises a plurality of second semiconductor components 12 .

[0093] exist Fig. 7A 1 shows an optoelectronic module 1 according to a first step of a method for manufacturing an optoelectronic module. The second semiconductor components 12 are configured to emit electromagnetic radiation having different dominant wavelengths. The second semiconductor components 12 are configured to emit electromagnetic radiation having a dominant wavelength in the red spectral range. The second semiconductor components 12 are configured to emit electromagnetic radiation having a dominant wavelength in the green spectral range. The second semiconductor components 12 are configured to emit electromagnetic radiation having a dominant wavelength in the blue spectral range. The second semiconductor components 12 together form an RGB primary color group, which is configured to emit colored mixed radiation.

[0094] The first semiconductor component 11 and the second semiconductor component 12 are arranged on a lead frame in the housing body 20. By means of a plurality of connecting lines 40, the semiconductor components 11, 12 are electrically conductively connected to one another.

[0095] exist Figure 7B , a further step of the method for producing an optoelectronic semiconductor component 1 is shown. In a further step, a dam-shaped structure 30 is introduced between the first semiconductor component 11 and the second semiconductor component 12 , which divides the main chamber 200 into a first subchamber 210 and a second subchamber 220 .

[0096] The dam-shaped structure 30 is formed by means of a radiation-impermeable material. For example, the dam-shaped structure 30 comprises a polysiloxane, in particular silicone, with titanium dioxide as a filling material. Advantageously, this reduces or prevents optical crosstalk between the first subchamber 210 and the second subchamber 220. The dam-shaped structure 30 is formed by means of a material that has a high optical reflectivity for the electromagnetic radiation emitted in the second semiconductor component 12 during operation. Advantageously, in this way, most of the electromagnetic radiation is emitted by the optoelectronic module 1 during operation. In a subsequent method step, the first semiconductor component 11 can be covered with a radiation-impermeable material without the filling material penetrating into the second subchamber 200.

[0097] exist Figure 8 , a schematic top view of an optoelectronic module 1 according to a seventh exemplary embodiment described here is shown from a flat angle. Here, it can be clearly seen that the connecting line 40 extends laterally through the dam-shaped structure 30. In other words, the dam-shaped structure 30 completely surrounds the connecting line 40 at least in some areas. Advantageously, the connecting line 40 is protected by the dam-shaped structure 30 from mechanical damage.

[0098] Fig. 9 A schematic top view of an optoelectronic module 1 according to an eighth embodiment described herein is shown. The optoelectronic module 1 comprises a housing body 20 having a main chamber 200, a first semiconductor component 11 and a plurality of second semiconductor components 12. In addition, the optoelectronic module comprises a dam-shaped structure 30, which divides the main chamber 200 into a first sub-chamber 210 and a second sub-chamber 220. The dam-shaped structure 30 extends from a side surface of the main chamber 200 of the housing body 20 to an opposite side surface of the housing body 20. Boundary surfaces 30A between the materials of the housing body 20 and the dam-shaped structure 30 are respectively formed at the side surfaces of the main chamber 200.

[0099] The first semiconductor component 11 extends completely through the dam-shaped structure 30 in the lateral direction. The dam-shaped structure 20 is at least partially arranged on the side of the first semiconductor component 11 facing away from the housing body 20. The second semiconductor component 12 is at least partially embedded in the first semiconductor component 11. The first semiconductor component 11 extends from the first sub-chamber 210 to the second sub-chamber 220.

[0100] Fig.10 A schematic sectional view of an optoelectronic module 1 according to an eighth exemplary embodiment described here is shown. Fig.10 The view corresponds to Fig. 9 , a section through the optoelectronic module 1 along the tangent line AA. In the side view, it can be clearly seen that the dam-shaped structure 30 is partially located on the first semiconductor component 11 and the second semiconductor component 12 is at least partially embedded in the first semiconductor component 11.

[0101] Advantageously, this results in a particularly simple assembly of the first and second semiconductor components 11 , 12 . It is also possible to dispense with connecting lines 40 , since the electrical contact is made within the first semiconductor component 11 .

[0102] Fig.11 1 shows a schematic sectional view of an optoelectronic module 1 according to a ninth exemplary embodiment described here. The ninth exemplary embodiment corresponds substantially to the exemplary embodiment described in Figure 2 . In contrast to the second embodiment, the housing body 20 comprises a raised portion 23, which extends between the first subchamber 210 and the second subchamber 220. The raised portion 23 is formed by means of the material of the housing body 20. A dam-shaped structure 30 is arranged on the raised portion 23. In other words, the raised portion 23 forms a base body for the dam-shaped structure 30. A boundary surface 30A exists between the dam-shaped structure 30 and the raised portion 23 in the housing 20. Advantageously, the lateral position of the subsequently applied dam-shaped structure 30 can already be determined by the raised portion 23 during the manufacture of the housing body 20. In particular, the raised portion 23 limits the lateral extension of the dam-shaped structure 30.

[0103] Fig.12 1 shows a schematic top view of an optoelectronic module 1 according to a tenth exemplary embodiment described here. The tenth exemplary embodiment corresponds substantially to the Figure 1B . Unlike the first embodiment, the tenth embodiment includes a third sub-chamber 230 and a fourth sub-chamber 240. Therefore, the dam-shaped structure 30 is disposed in the main chamber 200 of the housing body 20, so that the main chamber 200 is divided into a first sub-chamber 210, a second sub-chamber 220, a third sub-chamber 230 and a fourth sub-chamber 240. The dam-shaped structure 30 has a cross shape in a top view of the optoelectronic module 1.

[0104] A first semiconductor component 1 is arranged in the first subchamber 11. The first semiconductor component 11 comprises an integrated circuit and is designed to operate a light-emitting diode.

[0105] A plurality of second semiconductor devices 12 are arranged in the second subchamber 12. The second semiconductor devices 12 are configured to emit electromagnetic radiation having different main wavelengths. The second semiconductor devices 12 are configured to emit electromagnetic radiation having a main wavelength in the red spectral range. The second semiconductor devices 12 are configured to emit electromagnetic radiation having a main wavelength in the green spectral range. The second semiconductor devices 12 are configured to emit electromagnetic radiation having a main wavelength in the blue spectral range. The second semiconductor devices 12 together form an RGB primary color group, which is configured to emit colored mixed radiation.

[0106] The third semiconductor device 13 is arranged in the third sub-chamber 230. The third semiconductor device 13 includes, for example, a storage unit. Preferably, parameters for operating the second semiconductor device 12 are stored in the storage unit.

[0107] A fourth semiconductor component 14 is arranged in the fourth subchamber 14. The fourth semiconductor component 14 preferably comprises a sensor. For example, the fourth semiconductor component 14 is a photodiode or a temperature sensor. By means of the measured parameters of the fourth semiconductor component 14, for example, the emission of the second semiconductor component 12 can be monitored.

[0108] The first semiconductor component 11 is electrically conductively connected to each second semiconductor element 12 in the second subchamber 220 and to the third semiconductor component 13 in the third subchamber 230 by means of a plurality of connecting lines 40. The third semiconductor component 13 is electrically conductively connected to the fourth semiconductor component 14 in the fourth subchamber 240 by means of connecting lines 40.

[0109] The invention is not restricted by the description based on the exemplary embodiments. Rather, the invention comprises any novel feature and any combination of features, which in particular includes any combination of features in the claims, even if the feature or the combination itself is not described in detail in the claims or exemplary embodiments.

[0110] This patent application claims the priority of German patent application 102022120594.0, the disclosure content of which is incorporated herein by reference.

[0111] Reference numerals list

[0112] 1 Optoelectronic Module

[0113] 11First Semiconductor Device

[0114] 12 Second semiconductor device

[0115] 13Third semiconductor device

[0116] 14Fourth semiconductor device

[0117] 20 Shell body

[0118] 23. Raised part

[0119] 30 Dam-shaped structure

[0120] 30A Boundary surface

[0121] 30X Width of dam structure

[0122] 30Y dam structure height

[0123] 40 connection lines

[0124] 51 First filling material

[0125] 52 Second filling material

[0126] 110 electrodes

[0127] 200 main chamber

[0128] 200X bottom

[0129] 200Y side

[0130] 210 first subchamber

[0131] 220 second sub-chamber

[0132] 230 Third Sub-Chamber

[0133] 240 Fourth Subchamber

[0134] 310 base

[0135] 320 separation

[0136] α angle

Claims

1. An optoelectronic module (1), comprising: - a housing body (20) having a main chamber (200), and - a dam-shaped structure (30), wherein - the dam-shaped structure (30) divides the main chamber (200) into a first sub-chamber (210) and a second sub-chamber (220), - a first semiconductor device (11) is arranged in the first sub-chamber (210), - a second semiconductor device (12) is arranged in the second sub-chamber (220), and - There is a boundary surface (30A) between the dam-shaped structure (30) and the housing body (20).

2. The optoelectronic module (1) according to the preceding claim, wherein The dam-shaped structure (30) is formed by a material different from the material of the housing body (20).

3. The optoelectronic module (1) according to at least one of the preceding claims, wherein The angle (α) between the dam-shaped structure (30) and the housing body (20) is at most 90°.

4. The optoelectronic module (1) according to at least one of the preceding claims, wherein A connecting line (40) electrically conductively connects the first semiconductor component (11) to the second semiconductor component (12).

5. The optoelectronic module (1) according to the preceding claim, wherein The connecting line (40) extends at least partially through the dam-shaped structure (30).

6. The optoelectronic module (1) according to at least one of the preceding claims, wherein The dam-shaped structure (30) comprises a base body (310) and a separation body (320).

7. The optoelectronic module (1) according to the preceding claim, wherein The material of the base body (310) has a higher E modulus than the material of the separate body (320).

8. The optoelectronic module (1) according to at least one of the preceding claims, wherein - the first semiconductor device (11) comprises an integrated circuit and the second semiconductor device (12) is configured to emit or detect electromagnetic radiation.

9. The optoelectronic module (1) according to at least one of the preceding claims, wherein - A plurality of second semiconductor devices (12) are arranged in the second sub-chamber (220).

10. The optoelectronic module (1) according to at least one of the preceding claims, wherein The first subchamber (210) is filled with the material of the dam-shaped structure (30).

11. The optoelectronic module (1) according to at least one of the preceding claims, wherein The second subchamber (220) is filled with the material of the dam-shaped structure (30).

12. The optoelectronic module (1) according to at least one of the preceding claims, wherein - The first semiconductor device (11) extends from the first sub-chamber (210) into the second sub-chamber (220) through the dam-shaped structure (30).

13. The optoelectronic module (1) according to the preceding claim, wherein - the second semiconductor device (12) is at least partially embedded in the first semiconductor device (11).

14. The optoelectronic module (1) according to at least one of claims 12 and 13, wherein The dam-shaped structure (30) is at least partially arranged on the first semiconductor component (11).

15. A method for manufacturing an optoelectronic module (1), comprising the following steps: - providing a housing body (20) having a main chamber (200), - placing a first semiconductor device (11) and a second semiconductor device (12) in the main chamber (200), - Introducing a dam-shaped structure (30) into the main chamber (200) so that the main chamber (200) is divided into a first sub-chamber (210) and a second sub-chamber (220), wherein the first semiconductor device (11) is arranged in the first sub-chamber (210) and the second semiconductor device (12) is arranged in the second sub-chamber (220).

16. Method for producing an optoelectronic module (1) according to the preceding claim, wherein Before the dam-shaped structure (30) is introduced, a connecting line (40) is provided, which connects the first semiconductor component (11) to the second semiconductor component (12) in an electrically conductive manner.

17. Method for producing an optoelectronic module (1) according to the preceding claim, wherein - The base body (310) of the dam-shaped structure (30) is introduced into the main chamber (200) before the separation body (320) of the dam-shaped structure (30).

18. Method for producing an optoelectronic module (1) according to at least one of the preceding claims, wherein - Depositing the dam-shaped structure (30) by means of dispensing.

19. Method for producing an optoelectronic module (1) according to at least one of claims 15 to 17, wherein The dam-shaped structure (30) is manufactured by means of an additive manufacturing method.

20. Method for producing an optoelectronic module (1) according to at least one of claims 15 to 17, wherein The dam-shaped structure (30) is produced by means of a photolithographic method.

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