Semiconductor laser therapeutic instrument for spinal nerve injury

Abstract

The invention discloses a semiconductor laser therapeutic instrument for spinal nerve injury, which uses a continuous semiconductor laser to realize conversion of electricity and light so as to complete treatment of spinal nerve injury diseases. The equipment is a laser treatment product integrating a laser technology, an electronic technology, computer science, medical science and the like. The bottom-layer technical mechanism related to the therapeutic instrument is that a microprocessor is used for controlling a laser power supply, adjustable constant current is provided for a semiconductor laser module, a laser diode in the semiconductor laser module converts electric energy into light energy and continuously outputs laser with constant wavelength, and the therapeutic instrument is controlled by a specific device structure. And the injured nerves and tissues are irradiated, so that the effect of promoting spinal nerve injury repair is achieved.

Description

Technical Field

[0001] The invention belongs to the field of medical devices, and in particular relates to a semiconductor laser therapeutic device for treating spinal nerve injuries by utilizing weak laser irradiation. Background Art

[0002] Spinal cord injury (SCI) is a damage to the structure and function of the spinal cord caused by various injury factors, resulting in functional disorders (movement, sensation, reflex, etc.) below the injury level. It has the characteristics of high disability rate and poor prognosis, making SCI one of the major diseases that currently endanger the health of the people.

[0003] There are many reasons for spinal nerve injury, including degenerative diseases, such as cervical spinal stenosis, thoracic spinal stenosis and lumbar disc herniation. There are also traumatic spinal nerve injuries, the most common of which are various high-energy impact injuries, such as falling from heights and car accidents. In addition, spinal deformities, spinal infections and spinal tumors may all cause spinal nerve injuries to varying degrees.

[0004] According to the pathology after spinal nerve injury, it can be divided into primary spinal nerve injury and secondary spinal nerve injury. Primary injury is directly caused by vertebral fracture displacement. 、 It is caused by a variety of diseases such as spinal stenosis and intervertebral disc herniation. Primary injury triggers a series of downstream cellular reactions (microcirculatory disorders, inflammatory infiltration, neuronal apoptosis, etc.), leading to secondary spinal cord injury. Secondary spinal nerve injury refers to various adverse events that occur over time after primary injury. From early hemorrhage, edema, and acute autoinflammatory response to mid-term microcirculatory disorders, calcium ion influx, free radical formation, and even late secondary ischemia and hypoxia, nerve demyelination, and glial scar formation, they may occur alone or simultaneously.

[0005] After spinal nerve injury, the difficulty of neuron regeneration and the various inhibitory factors after injury make it extremely difficult for nerve tissue to regenerate, resulting in complete or partial loss of nerve function and dysfunction of target organs, which ultimately manifests as malnutrition, severe atrophy, motor dysfunction of muscle tissue, loss of sensory function in the innervated area and autonomic dysfunction, which brings a series of complications, resulting in a very poor prognosis for spinal nerve injury, causing physical and mental pain to patients with spinal nerve injury, as well as bringing financial and mental burdens to patients' families in terms of care and treatment.

[0006] Over the past four decades, surgery has remained the main treatment for acute and chronic spinal nerve injuries. According to public data, the annual number of spinal surgery operations in China reached 1.4 million in 2019. Trauma and degeneration are the two major causes of surgery, among which cervical spondylosis, lumbar disc herniation, and compression fractures are the types of diseases with relatively high surgical volume. The annual demand for surgery due to spinal problems reaches tens of millions of cases. Although surgical techniques have made great progress, after central nervous system injury, the existing treatment options still continue past experience, removing compression factors such as fracture blocks and spinal stenosis through surgery, and the recovery of spinal nerve damage mainly relies on drugs, acupuncture, physical therapy, and massage, and the effect is not satisfactory. Medical workers have also tried a variety of methods including hormone shock, anti-inflammatory drugs, nerve nutrition, nerve cell transplantation, and tissue engineering material placement for repair treatment, but there is currently no reliable and effective treatment method that can fully restore the function of patients with spinal nerve injury. This is also one of the reasons for the increase in conflicts between doctors and patients in this type of disease at this stage. Medical staff and patients are eager to have a rehabilitation method that directly targets the damaged spinal cord and effectively speeds up and improves the degree of spinal cord recovery. Therefore, the repair of central nervous system injuries is still a major challenge in the field of rehabilitation medicine.

[0007] Weak laser has been applied to clinical scientific research by relevant researchers because of its anti-inflammatory, analgesic, injury repair and other photochemical and biological stimulation effects, as well as its non-invasive characteristics. We hope to provide spinal nerve injury patients with more rehabilitation methods and opportunities through biological lasers. The input-output ratio of this treatment is easily accepted by clinicians and patients.

[0008] However, in the existing scientific research progress, the related supporting equipment used in percutaneous irradiation or intravascular irradiation technology still has the following defects. First, percutaneous irradiation technology makes it difficult for light to reach the surface of the spinal cord, affecting the absorption of spinal cord tissue and limiting the biological regulatory effect of light. Intravascular irradiation technology, because the irradiation components will be placed inside the blood vessels for a long time, it is easy to increase the risk of postoperative infection and bloodstream infection. Second: Semiconductor lasers are prone to catastrophic optical cavity surface damage and other phenomena, resulting in semiconductor laser power attenuation or premature failure, and the output wavelength of semiconductor lasers is easily affected by the external environment and wavelength drift occurs. Third: The output power pulse width of the semiconductor laser has poor controllability, and the output power and pulse width cannot be continuously and accurately controlled, affecting the efficiency and effect of spinal nerve injury treatment. Fourth: The semiconductor laser cannot guarantee long-term and reliable operation within the specified service life, affecting the expected treatment effect.

[0009] There is currently no suitable treatment equipment for postoperative rehabilitation of deeper spinal nerve tissue injuries, such as traumatic spinal nerve injury, cervical spondylosis, thoracolumbar spinal stenosis, lumbar disc herniation and other diseases. Summary of the invention

[0010] In view of the problems or technical defects in the prior art, the purpose of the present invention is to provide a semiconductor laser therapeutic device for spinal nerve injury, which uses a continuous semiconductor laser to achieve electrical and optical conversion and complete the treatment of spinal nerve injury diseases. The device is a laser treatment product that integrates multiple technologies such as laser technology, electronic technology, computer science, and medicine.

[0011] The underlying technical mechanism of the therapeutic device of the present invention is to use a microprocessor to control the laser power supply to provide an adjustable constant current for the semiconductor laser module. The laser diode inside the semiconductor laser module converts electrical energy into light energy and continuously outputs laser light of a constant wavelength. Through a specific device structure, the damaged nerves and tissues are irradiated to achieve the effect of promoting the repair of spinal nerve damage.

[0012] However, how to develop the relevant technical logic into products stably and sustainably, and how to truly move it from the laboratory stage to hospitals and other related treatment places, puts higher requirements on the repeatability and stability of scientific instruments. As the number of observation samples increases, application requirements become more specific and diversified, and the engineering and technical problems faced by product development are also increasing. How to systematically solve this series of problems is a common challenge faced by front-line development technicians. The specific problems we encountered in the actual R&D process include:

[0013] 1. Reliability of semiconductor lasers. Combined with the optical feedback adjustment function, how to effectively improve the reliability, working stability and anti-interference ability of semiconductor lasers.

[0014] 2. Equipment miniaturization. Under the premise of ensuring the reliability of the equipment, how to achieve multi-purpose use of one device, treat multiple patients at the same time, and make the equipment miniaturized, lightweight and intelligent.

[0015] 3. Power stability. How to improve the efficiency of semiconductor lasers in converting electrical energy into light energy, ensure the stability of laser output power, and accurately control the output power and pulse width.

[0016] 4. How to improve the heat dissipation efficiency of semiconductor lasers while reducing their size.

[0017] In order to solve the problems or technical defects related to the prior art, the present invention provides a semiconductor laser therapeutic device for spinal nerve injury. Compared with the prior art, the device has the following technical advantages:

[0018] Hardware level:

[0019] 1. Integrate laser technology, electronic technology, computer science, and medicine, use continuous semiconductor lasers to achieve the conversion of electricity and light, and promote the repair of spinal nerve injuries through the biological effects of weak lasers.

[0020] 2. Design an integrated set of equipment with detachable and replaceable treatment optical fibers. Realize the separate management of the host and consumables, and flexibly select different types of treatment optical fibers according to the patient's condition.

[0021] 3. The semiconductor laser included in the therapeutic apparatus of the present invention adopts a dual-chip integrated structure, which can ensure the stability of the laser output power under the premise that the power of one of the semiconductor chips is attenuated or fails.

[0022] 4. The semiconductor laser included in the therapeutic apparatus of the present invention adopts phase change heat dissipation, which can effectively reduce the volume and improve the heat dissipation efficiency.

[0023] Software level:

[0024] 1. The semiconductor laser included in the therapeutic apparatus of the present invention effectively filters out high-order mode lasers, compresses the light spot divergence angle, improves the output power, and easily realizes fiber-coupled output through mode selection and superlens collimation and focusing methods.

[0025] 2. The semiconductor laser included in the therapeutic apparatus of the present invention improves the power stability and reliability of the system by applying feedback and dynamic control methods to the upper semiconductor chip and the lower semiconductor chip at the same time.

[0026] 3. The semiconductor laser power supply system of the therapeutic apparatus of the present invention adopts power devices to form a current regulation loop, and the power devices are adjusted by a microprocessor control device to change the output current, thereby controlling the output laser energy and the working pulse width, and the feedback loop outputs the current sampling signal, which is transmitted to the microprocessor for real-time monitoring. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a system block diagram of the therapeutic apparatus of the present invention.

[0028] Figure 2 It is a schematic diagram of the structure of the semiconductor laser included in the therapeutic apparatus of the present invention.

[0029] Figure 3 It is a schematic diagram of the power drive feedback system of the semiconductor laser included in the therapeutic apparatus of the present invention.

[0030] Figure 4 It is a schematic diagram of the structure of the heat sink of the semiconductor laser included in the therapeutic apparatus of the present invention.

[0031] Figure 5 It is a schematic diagram of the structural principle of the heat sink of the semiconductor laser included in the therapeutic apparatus of the present invention.

[0032] Figure 6 This is the wiring diagram of the therapeutic apparatus of the present invention.

[0033] Figure 7a A flow chart of a feedback control strategy for a semiconductor laser included in the therapeutic apparatus of the present invention; Figure 7b This is a flow chart of another feedback control strategy for the semiconductor laser included in the therapeutic apparatus of the present invention.

[0034] Figure 8 It is a front view of the product structure and a schematic diagram of the internal structure of the therapeutic device of the present invention.

[0035] Fig. 9 It is a rear view of the product structure of the therapeutic device of the present invention.

[0036] Fig.10 It is a partial cross-sectional view of the product structure of the therapeutic device of the present invention.

[0037] Fig.11 This is the power test result of the semiconductor laser included in the therapeutic apparatus of the present invention.

[0038] Fig.12 This is the spectrum test result of the semiconductor laser included in the therapeutic device of the present invention.

[0039] Fig.13 The figures are the life test results of the semiconductor laser included in the therapeutic device of the present invention. The symbols and numbers in the figure represent the following meanings:

[0040] A control touch screen; B microprocessor control device; C semiconductor laser; D security alarm system; E ID card recognition system; F power module; G safety protection device; H jumper optical fiber;

[0041] B-1 main control board; B-2 industrial computer; B-3 first relay; B-4 second relay;

[0042] C-1 power drive feedback system; C-2 upper heat sink; C-3 upper semiconductor chip; C-4 lower heat sink; C-5 lower semiconductor chip; C-6 insulating partition layer; C-7 double-layer collimator; C-8 collimator module; C-9 upper spectrometer module; C-10 lower spectrometer module; C-11 upper power sensor; C-12 lower power sensor; C-13 upper feedback circuit; C-14 lower feedback circuit; C-15 optical mode selection module; C-16 collimation and focusing module; C-17 fiber coupling connector; C-21 first power drive module; C-22 second power drive module; C-23 first power drive module positive pole; C-24 first power drive module negative pole; C-25 second power drive module negative pole; C-26 second power drive module positive pole; C-27 feedback control module.

[0043] C-31 heat sink core; C-32 heat sink liquid absorption core; C-33 heat sink shell; C-34 steam; C-35 liquid;

[0044] D-1 alarm indicator light;

[0045] E-1 ID card reader;

[0046] F-1 self-locking push button switch; F-2 equipment power cord; F-3 switch power supply;

[0047] G-1 Metal emergency stop button switch; G-2 Overcurrent protector; G-3 Semiconductor laser interlocking device; G-4 Temperature sensor; G-5 Heat sink; G-6 Fan; G-7 Filter;

[0048] H-1 first jumper fiber optic handle; H-2 second jumper fiber optic handle;

[0049] I-1 handle status indicator light; I-2 automatic identification probe. DETAILED DESCRIPTION

[0050] The specific contents of the present invention are further described in detail below in conjunction with the accompanying drawings. It should be noted that the structures that are equivalently transformed based on the same technical concept of the present invention all belong to the scope of protection claimed by the present invention.

[0051] See also Figure 1 , Figure 6 , Figure 8-Figure 10 The semiconductor laser therapeutic device for spinal nerve injury of the present invention at least includes a semiconductor laser C, a power module F, a microprocessor control device B, and a control touch screen A, wherein the microprocessor control device B is respectively interconnected with the semiconductor laser C and the control touch screen A, and the semiconductor laser C is connected to the jumper optical fiber H; the power module F is respectively connected to the control touch screen A, the microprocessor control device B, and the semiconductor laser C.

[0052] The microprocessor control device B is also interconnected with the safety protection device G, and the safety protection device G is connected to the semiconductor laser C and the power module F respectively.

[0053] The microprocessor controller device includes a main control board B-1, and / or an industrial computer B-2, a first relay B-3, and a second relay B-4. The control board B-1 and / or the industrial computer B-2 are the operation control and command execution components of the therapeutic device. The industrial computer B-2 can also be reduced according to the configuration. The first relay B-3 and the second relay B-4 are used to control the power supply of the fan and the laser power module respectively, ensuring that the fan starts working only when the temperature sensor detects that the surface temperature of the laser generator exceeds the upper limit set by the program, and stops working when the temperature drops to the internal nominal temperature, which can save some power resources; the laser power module can only power the laser generator and emit the therapeutic laser when the device and the treatment optical fiber are reliably connected and the treatment parameters are set, so as to prevent the laser generator from being triggered by mistake and causing harm to the operator or other personnel.

[0054] The safety alarm system includes an alarm indicator light D-1, a display of the equipment operation status, and a reminder display of dangerous situations. The microprocessor control device B is also connected to the ID card recognition system E, which includes an ID card reader E-1. The ID card reader E-1 is a convenient way to enter information. The purpose is to quickly and accurately enter the patient's identity information, and to associate the treatment record with the patient's identity information. At the same time, it is convenient to quickly and accurately retrieve and find previous treatment records before subsequent treatment, as a reference for modifying the subsequent treatment plan. If there is no ID card, it can also be entered manually to achieve the above purpose.

[0055] The power module includes a metal self-locking button switch F-1, a device power line F-2, and a switching power supply F-3. The metal self-locking button switch F-1 is the main power switch of the device, and the device power connection line F-2 is the connection device between the device and the external power supply. The switching power supply F-3 is respectively connected to the control touch screen A and the main control board B-1, and the main control board B-1 is connected to the ID card reader E-1; when the industrial computer B-2 is selected, the switching power supply F-3 is respectively connected to the control touch screen A, the industrial computer B-2, and the main control board B-1, and the industrial computer B-2 is respectively connected to the control touch screen A and the main control board B-1, and the industrial computer B-2 is connected to the ID card reader E-1.

[0056] The switching power supply F-3 converts 220V AC power into stable DC power and supplies it to the control touch screen A, industrial computer B-2, and main control board B-1 as their respective working power supplies.

[0057] The safety protection device at least includes a metal emergency stop button switch G-1, an overcurrent protector G-2, a semiconductor laser interlock device G-3, a temperature sensor G-4, a fan G-6 and a filter G-7. The metal emergency stop button switch G-1 is a device used to quickly cut off the power supply of the equipment in an emergency to prevent uncontrollable damage or injury. The overcurrent protector G-2 is used to prevent the external power supply current from causing damage to the equipment when it fluctuates greatly and exceeds the maximum current allowed by the equipment device; the semiconductor laser interlock device G-3 is mainly used to prevent the equipment from being in a live state during equipment maintenance, and the laser is triggered by mistake to cause damage to the maintenance personnel. The laser interlock device G-3 can cut off the laser power module and disconnect the circuit that powers the laser generator. The equipment is in a live state, and the semiconductor laser generator cannot emit lasers, ensuring that the product meets the safety inspection standards for laser medical devices. The temperature sensor G-4 is used to monitor the working external surface temperature of the laser generator, and can control the working temperature of the laser generator C not to exceed the upper limit of the allowable optimal working temperature to prevent high temperature from damaging the laser generator. Fan G-6 is an over-temperature cooling device on the surface of semiconductor laser generator C. Fan G-6 and heat sink G-5 together form a heat dissipation device. The laser generator transfers heat to the heat sink through thermal conductive adhesive, and the heat sink G-5 quickly transfers local heat to other parts of the heat sink G-5, reducing the heat density by increasing the surface area. Fan G-6 blows external cold air onto the heat sink G-5 to accelerate air circulation, take away the heat on the heat sink, and achieve rapid cooling. Filter G-7 is used to improve the anti-interference ability of the treatment equipment and ensure the stable operation of the equipment.

[0058] The equipment power connection line F-2, overcurrent protector G-2, filter G-7, metal emergency stop button switch G-1, and switch power supply F-3 of the present invention are connected in sequence, and the switch power supply F-3 is respectively connected to the control touch screen A and the main control board B-1, and the main control board B-1 is connected to the ID card reader E-1; when the industrial computer B-2 is selected to be configured, the switch power supply F-3 is respectively connected to the control touch screen A, the industrial computer B-2, and the main control board B-1, and the industrial computer B-2 is respectively connected to the control touch screen A and the main control board B-1, and the industrial computer B-2 is connected to the ID card reader E-1. On the one hand, the main control board B-1 controls the temperature sensor G-4, the alarm indicator light D-1, the handle status indicator light I-1 and the automatic identification probe I-2 respectively through parallel connection; on the other hand, the main control board B-1 also controls the first relay B-4 and the second relay B-3 respectively through two lines, and the first relay B-4 is connected to the fan G-6; the metal self-locking button switch F-1 is connected to the second relay B-3, the laser power drive feedback system C-1, the semiconductor laser and the jumper optical fiber in sequence; the laser interlocking device G-3 is connected to the laser power drive feedback system C-1.

[0059] The microprocessor control device B controls the laser power supply and provides an adjustable constant current for the semiconductor laser C. The laser diode inside the semiconductor laser module converts electrical energy into light energy and outputs a laser with a wavelength of 600nm-1200nm. The laser beam irradiates the damaged nerves and tissues and utilizes the photochemical and biological stimulation effects of laser and human tissue to promote and accelerate nerve repair function, improve blood circulation, reduce edema, and reduce autoimmune inflammatory reactions, ultimately achieving the effect of promoting the repair of spinal nerve injuries and realizing biological laser treatment of acute and chronic spinal nerve injuries.

[0060] The power module F includes a metal self-locking button switch F-1, a device power line F-2 and a switch power supply F-3. The power module F is respectively connected to the semiconductor laser C, the control touch screen A and the microprocessor control device B. The fixed connection line at the rear of the therapeutic device is used to connect to the external power supply part.

[0061] The power module F provides working current for the microprocessor control device B and the control touch screen A, and the on and off of the semiconductor laser is controlled by the treatment fiber automatic identification device on the jumper fiber H handle. Only when the device and the treatment fiber are reliably connected, the microprocessor control device B controls the second relay B-3 to connect the laser power drive feedback system C-1 and the semiconductor laser C. The power-on, preparation for use, and light-emitting processes of the semiconductor laser C are all monitored by the microprocessor control device B, so that the operation of the therapeutic device is more stable and reliable.

[0062] The power drive feedback system C-1 of the semiconductor laser C uses power devices to form a current regulation loop. The microprocessor control device B adjusts the power devices to change the output current, thereby controlling the output laser energy and the working pulse width. The feedback loop outputs a current sampling signal and transmits it to the microprocessor control device B for real-time monitoring.

[0063] The microprocessor control device B detects, monitors and controls the entire circuit status of the semiconductor laser C during power-on, preparation for use and light emission by controlling the current regulation loop formed by the power device, and displays fault information by controlling the touch screen A, so that users and equipment maintenance personnel can control the real-time working status of the therapeutic device.

[0064] See also Figure 2The semiconductor laser included in the therapeutic apparatus of the present invention includes a power drive feedback system C-1, which is connected to the upper semiconductor chip C-3 and the lower semiconductor chip C-5 respectively. The lasers generated by the upper semiconductor chip C-3 and the lower semiconductor chip C-5 are collimated by a double-layer collimator C-7 respectively, and are divided into two lasers in the vertical direction and the horizontal direction by an upper splitter module C-9 and a lower splitter module C-10, and the vertical laser is transmitted to an upper power sensor C-11 and a lower power sensor C-12 respectively, and then connected to the power drive feedback system C-1 through an upper feedback circuit C-13 and a lower feedback circuit C-14 respectively; the horizontal laser is filtered out of the high-order mode of the emitted light through a mode selector C-15, and the beam is collimated and focused by a super lens C-16, and is incident into the inside of a jumper optical fiber H through a fiber coupling connector C-17, and finally the laser is output through the jumper optical fiber H.

[0065] See also Figure 3 The semiconductor laser power drive feedback system C-1 in the semiconductor laser therapeutic device of the present invention includes two independently working power drive modules and one feedback module. The first power drive module C-21 includes a positive electrode C-23 and a negative electrode C-24, and the second power drive module C-22 includes a negative electrode C-25 and a positive electrode C-26. C-27 is the feedback module of the power drive feedback system.

[0066] The upper semiconductor chip C-3 is connected to the positive electrode C-23 of the first power drive module C-21, and the upper heat sink C-2 is connected to the negative electrode C-24 of the first power drive module C-21. The lower semiconductor chip C-5 is connected to the positive electrode C-26 of the second power drive module C-22, and the lower heat sink C-4 is connected to the negative electrode C-25 of the second power drive module C-22. The upper heat sink C-2 and the lower semiconductor chip C-5 are insulated by an insulating separation layer C-6 to prevent the upper and lower chips from interfering with each other.

[0067] See also Figure 4 , Figure 5In the semiconductor laser of the semiconductor laser therapeutic apparatus of the present invention, the upper heat sink C-2 and the lower heat sink C-4 adopt a phase change heat dissipation structure, which can effectively improve the heat dissipation efficiency. The phase change heat dissipation structure includes a heat sink shell C-33, a heat sink core C-31 is sleeved in the heat sink shell C-33, and a heat sink liquid absorption core C-32 with a porous capillary structure is sleeved on the inner wall of the heat sink core C-31. One end of the heat sink core C-31 is an evaporation section, and the other end is a condensation section. When one end of the heat sink core C-31 is heated, the working liquid of the heat sink liquid absorber core C-32 evaporates and vaporizes, and evaporates into steam C-34 at the (liquid-vapor) interface in the evaporation section. Steam C-34 flows to the other end under a small pressure difference, releases heat and condenses into liquid C-35. Steam C-34 flows from the evaporation section to the condensation section; steam C-34 condenses on the vapor-liquid interface in the condensation section; heat is transferred from the (vapor-liquid) interface to the outside through the heat sink liquid absorber core C-32, liquid C-35 and the heat sink shell C-33, and liquid C-35 flows back to the evaporation section along the porous capillary structure by the action of capillary suction.

[0068] See also Figure 2 The lasers emitted by the upper semiconductor chip C-3 and the lower semiconductor chip C-5 have a large divergence angle, so they are collimated by a double-layer collimator C-7 to compress the divergence angle of the fast and slow axes to less than 0.5°. Then they are incident on the spectrometer module C-9 through a focusing lens. Among them, the light emitted by the upper semiconductor chip C-3 is divided into two paths of light in the vertical direction and the horizontal direction by the spectrometer module C-9, and the light intensity ratio in the vertical direction and the horizontal direction is 5:95. The light in the vertical direction is incident on the upper power sensor C-11, which mainly realizes real-time power monitoring and feedback. The monitoring signal is transmitted to the feedback module C-27 of the power drive feedback system C-1 through the feedback circuit C-13, and the feedback module C-27 provides a feedback signal to the power drive system C-1. Among them, the light emitted by the lower semiconductor chip C-5 is divided into two paths of light in the vertical direction and the horizontal direction by the spectrometer module C-10, and the light intensity ratio in the vertical direction and the horizontal direction is 5:95. The light in the vertical direction is incident on the lower power sensor C-12, whose main function is to realize real-time power monitoring and feedback. The monitoring signal is transmitted to the feedback module C-27 of the power drive feedback system C-1 through the feedback circuit C-14. The feedback module C-27 provides a feedback signal to the power drive system C-1.

[0069] The laser emitted horizontally from the splitter module C-9 and the splitter module C-10 is further filtered out by the mode selector C-15 to achieve efficient output. Then the beam is collimated and focused by the super lens C-16, and is incident into the jumper fiber H through the fiber coupling connector C-17, and finally the laser is output through the jumper fiber H.

[0070] See also Figure 7a and Figure 7b The semiconductor laser therapeutic apparatus of the present invention, the power supply feedback module C-27 of the semiconductor laser performs the following feedback control method, the process is as follows:

[0071] When the semiconductor laser starts working, the output current of the upper semiconductor chip C-3 and the output current of the lower semiconductor chip C-5 are set to be the same, so that the sum of the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 is equal to the set value P set ; Among them, P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip C-3 or the lower semiconductor chip C-5.

[0072] The calculation method of the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 is:

[0073] P1=k1×PM1 (1)

[0074] P2=k2×PM2 (2)

[0075] k1 and k2 are calibration coefficients of the upper power sensor C-11 and the lower power sensor C-12, which are obtained by calibration using a standard light source with known power.

[0076] During the operation of the laser module, the powers PM1 and PM2 of the upper power sensor C-11 and the lower power sensor C-12 are monitored every 5-10 seconds, and the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 are calculated according to formula (1) and formula (2).

[0077] If the output power P1 of the upper semiconductor chip C-3 is less than P set / 2, or the output power P2 of the lower semiconductor chip C-5 is less than P set / 2, increase the output current of the corresponding circuit drive module until the laser output power is equal to the set value P set ; If the current of the upper semiconductor chip C-3 cannot reach P set / 2 or the current of the lower semiconductor chip C-5 cannot reach P set / 2, then add another current until P1+P2=P set If the current of the upper semiconductor chip C-3 and the lower semiconductor chip C-5 cannot reach the set value P set , then it is determined that the semiconductor laser has failed as a whole.

[0078] If the output power P1 of the upper semiconductor chip C-3 is greater than P set / 2, or the output power P2 of the lower semiconductor chip C-5 is greater than P set / 2, reduce the output current of the corresponding circuit drive module until the laser output power is equal to the set value P set ; If the current of the upper semiconductor chip C-3 cannot reach P set / 2, or the current of the lower semiconductor chip C-5 cannot reach P set / 2, it is determined that the upper semiconductor chip C-3 or the lower semiconductor chip C-5 is failed, the current of the failed circuit is set to zero, and the current of another circuit is increased until P2 = P set Or P1=P set ; If the set value P cannot be reached by adjusting the other current set , then it is determined that the semiconductor laser has failed as a whole.

[0079] The semiconductor laser therapeutic apparatus of the present invention, the power supply feedback module C-27 of the semiconductor laser implements another feedback control method, the process is as follows:

[0080] When the semiconductor laser starts working, the output current of the upper semiconductor chip C-3 and the output current of the lower semiconductor chip C-5 are set to be the same; the sum of the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 is equal to the set value P set ; Among them, P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip C-3 or the lower semiconductor chip C-5.

[0081] The calculation method of the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 is:

[0082] P1=k1×PM1 (1)

[0083] P2=k2×PM2 (2)

[0084] k1 and k2 are calibration coefficients of the upper power sensor C-11 and the lower power sensor C-12, which are obtained by calibration using a standard light source with known power.

[0085] During the operation of the laser module, the powers PM1 and PM2 of the upper power sensor C-11 and the lower power sensor C-12 are monitored every 5-10 seconds, and the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 are calculated according to formula (1) and formula (2).

[0086] If P1+P2 is less than the set value P set, increase the output current of the upper semiconductor chip C-3 until the semiconductor laser output power equals the set value P set If the output power of the semiconductor laser cannot reach the set value P by adjusting the upper semiconductor chip C-3 set , the power of the upper semiconductor chip C-3 decays, and the output current of the lower semiconductor chip C-5 is increased until the semiconductor laser output power P1+P2 equals the set value P set ; If the output circuits of the two chips cannot reach the set value P set , then it is determined that the semiconductor laser has failed as a whole.

[0087] If P1+P2 is greater than the set value P set , reduce the output current of the upper semiconductor chip C-3 until the semiconductor laser output power is equal to the set value P set If the upper semiconductor chip C-3 is lowered, the laser output power cannot reach the set value P set , then it is determined that the semiconductor laser has failed as a whole.

[0088] The above series of improvements in the structure of the semiconductor laser C of the therapeutic device of the present invention have achieved the following technical improvements in the performance of the entire therapeutic device: First, miniaturization, ensuring the realization of the engineering requirements for miniaturization of the overall volume of the therapeutic device. Second, low power consumption. Compared with other types of semiconductor lasers, this semiconductor laser has lower power consumption, which meets the actual use and maintenance requirements of surgical and therapeutic rehabilitation application scenarios. Third, high efficiency, effectively improving the conversion efficiency of semiconductor lasers in converting electrical energy into light energy. Fourth, wavelength stability. The semiconductor laser can achieve a long-term output wavelength that is not easily affected by the external environment and does not cause wavelength drift, and constantly outputs a stable wavelength. Fifth, the output power pulse width is controllable. According to different medical treatment methods or diagnostic requirements, the output power and pulse width can be accurately controlled. Sixth, the stability of life and treatment parameters. The semiconductor laser can provide sufficiently long and reliable power output, ensuring the treatment and rehabilitation needs of patients with various types of spinal nerve injuries.

[0089] See also Figures 11 to 13 , Fig.11 The power output results of the semiconductor laser module are given. Under the condition of 0.5A current, the output power of the semiconductor laser module reaches 1.2W. Fig.12 The spectrum test results of the semiconductor laser module are given, and its central wavelength is 808nm. Fig.13 The life test result of the semiconductor laser module is given. After working for 10,000 hours, the power of the semiconductor laser is almost not attenuated, which shows that the semiconductor laser proposed in the present invention has high reliability and can work stably for a long time.

[0090] Combined with the product structure schematic diagram of the present invention, the operation steps of the therapeutic device of the present invention are described as follows:

[0091] S1: Work preparation: a. Connect the device to the power socket in the room. b. Check that the emergency stop switch is on. c. Check whether the jumper fiber H and the treatment handle are detached or broken.

[0092] S2: Turn on the power switch F-3 of the device. All treatment commands are issued by the control touch screen A and transmitted to the control part for distribution and execution. After the treatment device is started, it enters the self-test interface. The self-test includes power supply, laser power drive feedback system C-1, temperature of the upper semiconductor chip C-3 and the lower semiconductor chip C-5 of the laser generator, and the maximum current of the laser generator. The device will instantly power on the corresponding parts to see if the corresponding parts are connected and normal. If there is a fault in the self-test, it will be marked, the program will stay in the self-test interface, and the device cannot be used anymore.

[0093] S3: After the self-test is passed, the touch screen is controlled to enter the password interface, and the correct password is entered to enter the patient information registration interface. The device handle status indicator I-1 is red; the device alarm indicator D-1 is yellow.

[0094] S4: After entering the patient information registration interface, select the registration method or directly click OK to enter the next interface. The patient information registration interface display screen is divided into two parts (the left side registers the treatment personnel information of the left handle of the device, and the right side registers the treatment personnel information of the right handle of the device). There are two ways to register personal information: automatic input and manual input. If you choose automatic input, you only need to place the second-generation ID card on the card swiping area of ​​the device, and the personal information will be automatically filled in; if you choose manual input, enter the interface items one by one through the interface buttons. Whether it is automatic input or manual input, the patient's hospitalization number must be entered manually; after entering personal information, click OK to enter the next interface, or you can click the OK button directly to enter the next interface without entering personal information.

[0095] S5: After the patient information is registered, the interface for prompting the connection between the treatment fiber and the device is entered. If the treatment fiber and the device are connected reliably, the treatment parameter setting interface is directly entered; if there is a problem with the connection between the treatment fiber and the device fiber or there is no connection, the interface will use a Flash animation to prompt the method of connecting the fiber and the connection. Check the connection and lock it or connect it. The animation will automatically disappear, and the indicator light on the device handle will also change from red to yellow. If the connection is unreliable, the indicator light on the device handle is red.

[0096] S6: In the treatment parameter setting interface, you can set the treatment mode (continuous treatment and pulse treatment), treatment energy level, and treatment time. For pulse treatment, you also need to set the pulse time and pulse interval.

[0097] S7: After setting the treatment parameters, click the "Start Treatment" button to pop up the parameter confirmation interface. Click OK and the device will start working. During the treatment, if you need to adjust the set parameters, click the "Pause" button to stop the treatment, and click the parameters that need to be adjusted to reset them. The main control board B-1 supplies power to the semiconductor laser power drive feedback system control circuit. The control program will supply power according to the voltage corresponding to the selected energy level, and the semiconductor laser generator C will provide different powers of laser light energy for treatment according to the current provided.

[0098] After setting the treatment parameters, click Start Treatment, a pop-up window will pop up to confirm the treatment parameters, click OK, the treatment time will start to count down, and the device alarm indicator D-1 and the handle status indicator I-1 will change from yellow to green. After working for a period of time, the device enters the standby state, and the treatment will continue in the background. The control touch screen A will continue to display the treatment time countdown, and the treatment setting parameters will also be presented on the control touch screen A. During the treatment process, the microprocessor control device B control program will monitor the voltage provided to the laser control power supply in real time. When the monitored voltage fluctuation is greater than the voltage range of the energy level, the control program will automatically adjust the output voltage to the nominal value of the voltage corresponding to the energy level.

[0099] S8: When the treatment countdown reaches zero, the microprocessor control device B controls the program to control the relay to disconnect the laser and stop working. The control touch screen A will pop up a pop-up window to indicate the end of treatment. Regardless of whether it is in standby mode or not, a password must be entered before the pop-up window to indicate the end of treatment disappears. The operation interface returns to the patient information registration interface, and the patient's current treatment information is automatically saved in the patient's treatment record. At the same time, the device will also accumulate the real-time working time of the semiconductor laser generator C. The device has a built-in laser service life. When the accumulated time reaches the built-in service life, the device will pop up that the laser has reached the preset value, prompting the user to contact the manufacturer for replacement. If the patient has received treatment before, after entering the patient's hospitalization number in the patient information registration interface, the patient's last treatment parameters will automatically pop up in the parameter setting interface. The operator can click on the treatment information query interface to enter the query password. Entering the patient's name or hospitalization number in the query interface can query the patient's previous treatment records. Medical staff can evaluate the patient's treatment effect based on the examination results during the treatment process and revise the patient's subsequent treatment parameters based on the treatment effect. During the treatment process, the device will record the treatment parameters in real time to prevent accidental power failure and repeated treatment of the patient. After an unexpected power outage, you can restart the device and continue treatment according to the original settings. If the treatment fiber and device are disconnected during the power outage, the treatment data cannot be restored after restarting.

[0100] S9: After the treatment, disconnect the treatment fiber from the device, install a protective cover on the treatment fiber, install a protective cap on the device handle and hang it on the device handle bracket.

[0101] S10: Turn off the power switch and unplug the external power plug.

[0102] The semiconductor laser therapeutic device for spinal nerve injury of the present invention is mainly applicable to patients with acute and chronic spinal nerve injury and can be used to treat diseases such as herniated disc, spinal stenosis, spondylolisthesis or traumatic fracture in various segments of the cervical, thoracic, lumbar and sacral vertebrae.

[0103] The study shows that the semiconductor laser therapeutic instrument jumper optical fiber H of the present invention is connected to the medical treatment optical fiber, and the medical treatment optical fiber light-emitting segment is placed above the spinal cord, the corresponding treatment parameters are adjusted, and the treatment cycle is continuously irradiated. The safety and effectiveness of the semiconductor laser therapeutic instrument for spinal nerve injury are evaluated by vital signs (body temperature, blood pressure, respiratory rate, heart rate, blood oxygen saturation), infection indicators (leukocytes, neutrophils, hypersensitive C-reactive protein, procalcitonin), photoallergic reaction indicators (eosinophils, basophils), coagulation function indicators (prothrombin time, activated partial thromboplastin time and thrombin time) and American Spinal Injury Association sensory and motor scores (American Spinal Injury Association, ASIA). After 3 months, the patient was followed up. In our study, direct photobiomodulation of the spinal nerve injury site did not cause clinical changes in the patient's vital signs. On the 3rd day after irradiation, there was no significant difference in the patient's leukocytes, neutrophils and hypersensitive C-reactive protein compared with the control group. The changes in eosinophils and basophils, which are closely related to allergic reactions, were within the normal range throughout the irradiation process. The patients' coagulation functions (prothrombin time, activated partial thromboplastin time, and thrombin time) were all within the normal range. After irradiation treatment, the AS IA sensory and motor scores of all patients improved. This treatment method overcomes the shortcomings of previous percutaneous or intravascular irradiation treatments that light cannot be directly applied to deeper SCI sites. Within the appropriate irradiation parameter range, the use of photobiomodulation therapy directly at the site of spinal nerve injury will not produce adverse reactions. This method is safe, feasible, and does not cause additional trauma to patients.

Claims

1. A semiconductor laser therapeutic apparatus for spinal nerve injury, comprising at least a semiconductor laser, a power module, a microprocessor control device, and a control touch screen, wherein the microprocessor control device is interconnected with the semiconductor laser and the control touch screen respectively, and the semiconductor laser is connected to a jumper optical fiber; the power module is connected to the control touch screen, the microprocessor control device, and the semiconductor laser respectively, and characterized in that: The semiconductor laser comprises a power drive feedback system (C-1), the power drive feedback system (C-1) is connected to an upper semiconductor chip (C-3) and a lower semiconductor chip (C-5) respectively, the lasers generated by the upper semiconductor chip (C-3) and the lower semiconductor chip (C-5) are collimated by a double-layer collimator (C-7), and are divided into two lasers in the vertical direction and the horizontal direction by an upper light splitting module (C-9) and a lower light splitting module (C-10), and the vertical lasers are respectively The light is transmitted to the upper power sensor (C-11) and the lower power sensor (C-12), and then connected to the power drive feedback system (C-1) through the upper feedback circuit (C-13) and the lower feedback circuit (C-14) respectively; the horizontal laser passes through the mode selector (C-15) to filter out the high-order mode of the output light, and the beam is collimated and focused by the super lens (C-16), and is incident into the jumper fiber (H) through the fiber coupling connector (C-17), and finally the laser is output through the jumper fiber (H).

2. The semiconductor laser therapeutic apparatus as claimed in claim 1, characterized in that: The power drive feedback system (C-1) comprises a first power drive module (C-21), a second power drive module (C-22) and a power feedback module (C-27); the upper semiconductor chip (C-3) is connected to the positive pole of the first power drive module (C-21), the upper heat sink (C-2) is connected to the negative pole of the first power drive module (C-21), the lower semiconductor chip (C-5) is connected to the positive pole of the second power drive module (C-22), and the lower heat sink (C-4) is connected to the negative pole of the second power drive module (C-22).

3. The semiconductor laser therapeutic apparatus as claimed in claim 2, characterized in that: The upper heat sink (C-2) and the lower heat sink (C-4) adopt a phase change heat dissipation structure, which includes a heat sink tube shell (C-33), a heat sink tube core (C-31) is sleeved in the heat sink tube shell (C-33), and a heat sink liquid absorbent core (C-32) with a porous capillary structure is inlaid on the inner wall of the heat sink tube core (C-31). One end of the heat sink tube core (C-31) is an evaporation section, and the other end is a condensation section. When one end of the heat sink tube core (C-31) is heated, the working liquid of the heat sink liquid absorbent core (C-32) evaporates and vaporizes, and the steam (C-34) flows to the other end under a small pressure difference to release heat and condense into liquid (C-35), and the liquid (C-35) then flows back to the evaporation section along the porous capillary structure by the action of capillary suction.

4. The semiconductor laser therapeutic apparatus according to any one of claims 1 to 3, characterized in that: The light intensity ratio of the upper light splitting module (C-9) and the lower light splitting module (C-10) in the vertical direction and the horizontal direction is 5:

95.

5. The semiconductor laser therapeutic apparatus as claimed in claim 4, characterized in that: The lasers emitted by the upper semiconductor chip (C-3) and the lower semiconductor chip (C-5) are collimated by a double-layer collimator (C-7), and the divergence angle of the fast and slow axes of the semiconductor laser is less than 0.5°.

6. The semiconductor laser therapeutic apparatus as claimed in claim 1, characterized in that: The microprocessor control device is also connected to an ID card recognition system, which includes an ID card reader (E-1).

7. The semiconductor laser therapeutic apparatus as claimed in claim 1, characterized in that: The microprocessor control device is also interconnected with the safety protection device, and the safety protection device is respectively connected with the semiconductor laser and the power supply module.

8. The semiconductor laser therapeutic apparatus as claimed in claim 7, characterized in that: The microprocessor controller device includes a main control board (B-1) and / or an industrial computer (B-2), a first relay (B-3) and a second relay (B-4); the safety alarm system includes an alarm indicator light (D-1), and the ID card recognition system includes an ID card reader (E-1); the power module includes a metal self-locking button switch (F-1), an equipment power cord (F-2) and a switching power supply (F-3); the safety protection device includes a metal emergency stop button switch (G-1), an overcurrent protector (G-2), a semiconductor laser interlocking device (G-3), a temperature sensor (G-4), a fan (G-6) and a filter (G-7); Among them, the equipment power connection line (F-2), overcurrent protector (G-2), filter (G-7), metal emergency stop button switch (G-1), and switch power supply (F-3) are connected in sequence, and the switch power supply F-3 is respectively connected to the control touch screen A and the main control board B-1, and the main control board B-1 is connected to the ID card reader E-1; when the industrial computer B-2 is selected, the switch power supply F-3 is respectively connected to the control touch screen A, the industrial computer B-2, and the main control board B-1, and the industrial computer B-2 is respectively connected to the control touch screen A and the main control board B-1, and the industrial computer B-2 is connected to the ID card reader E-1; On the one hand, the main control board (B-1) controls the temperature sensor (G-4), the alarm indicator light (D-1), the handle status indicator light (I-1) and the automatic identification probe (I-2) respectively through parallel connection; on the other hand, the main control board (B-1) also controls the first relay (B-4) and the second relay (B-3) respectively through two lines, and the first relay (B-4) is connected to the fan (G-6); the metal self-locking button switch (F-1) is connected to the second relay (B-3), the laser power drive feedback system (C-1), the semiconductor laser and the jumper optical fiber in sequence; the laser interlocking device (G-3) is connected to the laser power drive feedback system (C-1).

9. The semiconductor laser therapeutic apparatus as claimed in claim 2, characterized in that: One of the feedback control methods of the power feedback module (C-27) is as follows: When the semiconductor laser starts working, the output current of the upper semiconductor chip (C-3) and the output current of the lower semiconductor chip (C-5) are made the same, so that the sum of the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) is equal to the set value P set ; Among them, P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip (C-3) or the lower semiconductor chip (C-5); The calculation method of the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) is: P1=k1×PM1 (1) P2=k2×PM2 (2) k1 and k2 are the calibration coefficients of the upper power sensor (C-11) and the lower power sensor (C-12), which are obtained by calibration with a standard light source of known power; During the operation of the semiconductor laser, the powers PM1 and PM2 of the upper power sensor (C-11) and the lower power sensor (C-12) are monitored every 5-10 seconds, and the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) are calculated according to formula (1) and formula (2); If the output power P1 of the upper semiconductor chip (C-3) is less than P set / 2, or the output power P2 of the lower semiconductor chip (C-5) is less than P set / 2, increase the output current of the corresponding circuit drive module until the laser output power is equal to the set value P set ; If the current of the upper semiconductor chip (C-3) cannot reach P set / 2 or the current of the lower semiconductor chip (C-5) cannot reach P set / 2, then add another current until P1+P2=P set If the current of the upper semiconductor chip (C-3) and the lower semiconductor chip (C-5) cannot reach the set value P set , then it is determined that the semiconductor laser has failed as a whole; If the output power P1 of the upper semiconductor chip (C-3) is greater than P set / 2, or the output power P2 of the lower semiconductor chip (C-5) is greater than P set / 2, reduce the output current of the corresponding circuit drive module until the laser output power is equal to the set value P set ; If the current of the upper semiconductor chip (C-3) cannot reach P set / 2, or the current of the lower semiconductor chip (C-5) cannot reach P set / 2, it is determined that the upper semiconductor chip (C-3) or the lower semiconductor chip (C-5) is failed, the current of the failed circuit is set to zero, and the current of another circuit is increased until P2 = P set Or P1=P set ; If the set value P cannot be reached by adjusting the other current set , then it is determined that the semiconductor laser has failed as a whole.

10. The semiconductor laser therapeutic apparatus as claimed in claim 2, characterized in that: Another feedback control method of the power supply feedback module (C-27) is as follows: When the semiconductor laser starts working, the output current of the upper semiconductor chip (C-3) and the output current of the lower semiconductor chip (C-5) are made the same; the sum of the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) is equal to the set value P set ; Among them, P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip (C-3) or the lower semiconductor chip (C-5); The calculation method of the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) is: P1=k1×PM1 (1) P2=k2×PM2 (2) k1 and k2 are the calibration coefficients of the upper power sensor (C-11) and the lower power sensor (C-12), which are obtained by calibration with a standard light source of known power; During the operation of the semiconductor laser, the powers PM1 and PM2 of the upper power sensor (C-11) and the lower power sensor (C-12) are monitored every 5-10 seconds, and the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) are calculated according to formula (1) and formula (2); If P1+P2 is less than the set value P set , increase the output current of the upper semiconductor chip (C-3) until the semiconductor laser output power equals the set value P set If the output power of the semiconductor laser cannot reach the set value P by adjusting the upper semiconductor chip (C-3), set , the power of the upper semiconductor chip (C-3) decays, and the output current of the lower semiconductor chip (C-5) is increased until the output power P1+P2 of the semiconductor laser is equal to the set value P set ; If the output circuits of the two chips cannot reach the set value P set , then it is determined that the semiconductor laser has failed as a whole; If P1+P2 is greater than the set value P set , reduce the output current of the upper semiconductor chip (C-3) until the output power of the semiconductor laser is equal to the set value P set If the upper semiconductor chip (C-3) is lowered, the laser output power cannot reach the set value P set , then it is determined that the semiconductor laser has failed as a whole.

11. A semiconductor laser therapeutic apparatus using any one of claims 1 to 10, characterized in that: The therapeutic device is used for treating spinal nerve injury.

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