A preparation technology for ultra-thin metallized ceramic devices
By using vacuum sputtering and water electroplating technology to form nano-copper layers and copper plating on the surface of ceramic devices, the problem of poor connection strength between ceramics and metals is solved, and efficient metallization process and precise copper plating control are achieved.
Patent Information
- Application Number
- CN202411777174.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-05
- Publication Date
- 2025-04-08
AI Technical Summary
The prior art is difficult to effectively connect ceramics and metals, resulting in poor strength and difficulty in temperature control during metallization.
Using vacuum sputtering and water electroplating technology, the tight bond between ceramic and metal is achieved by forming a nano-copper layer and copper plating layer on the surface of ceramic devices.
It improves the yield and reliability of extremely thin metalized ceramic devices, realizes precise control of copper plating thickness, and reduces defects caused by raw materials and process reasons.
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Figure CN119776776A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of ceramic metallization, and in particular relates to a preparation technology of an extremely thin metallized ceramic device. Background Art
[0002] With the continuous advancement of science and technology and the rapid development of emerging industries, metallized ceramics, as a high-performance composite material, have shown great application potential and market prospects in many fields such as aerospace, military industry, electronics, and automobiles.
[0003] Due to the differences in the surface structures of ceramic and metal materials, welding / brazing is usually unable to wet the ceramic surface or form a strong bond with it. Therefore, joining ceramic to metal is a special process called metallization.
[0004] At present, the four common ceramic substrates commonly used for metallization are BeO, Al2O3, AlN and Si3N4. But different ceramics have different properties, so their metallization methods are also different. The most common method for metallizing BeO ceramics is the Mo-Mn method, which involves coating the surface of the ceramic with a paste-like mixture of pure metal powder (Mo, Mn) and metal oxides, and then heating it at high temperature in a furnace to form a metal layer. The main metallization methods for Al2O3 ceramics are DBC and DPC, which involve placing a treated copper foil on the surface of Al2O3 ceramics, introducing an inert gas with a certain oxygen content, and then heating it. During the heating process, the copper surface is oxidized, and when the temperature reaches the eutectic liquid phase region, a eutectic liquid phase is formed, which wets the Al2O3 ceramic and copper to achieve a close bond. Chemically, DBC uses a stronger adhesion than DPC because it has a thicker copper layer. Common methods for AlN ceramics include DBC and active metal brazing (AMB). DBC is similar to the method used for Al2O3 ceramics, but AlN ceramics need to be pre-oxidized because AlN is a non-oxidizing ceramic. AMB involves the use of an active metal brazing material, usually an Ag-Cu-Ti alloy, to join AlN ceramics and copper foil. Si3N4 ceramics cannot be directly metallized using direct copper plating because they do not form an oxide layer on the surface like AlN ceramics. Si3N4 ceramics are usually joined to metal using the AMB method, where the chemical reaction between Si3N4 and the active metal (Ti, Cr, V) forms a continuous nitride layer at the interface.
[0005] During the metallization process, the sintering temperature needs to be strictly controlled. It can usually be divided into four ranges: a. Ultra-high temperature (above 1600℃): This temperature range is reserved for specific applications that require extremely high heat resistance. b. High temperature (1450℃ to 1600℃): High temperature is essential to ensure effective diffusion and migration of the glass phase, achieving a strong bond. But the higher the temperature, the better. Too high a temperature may lead to reduced metallization strength. c. Medium temperature (1300℃ to 1450℃): This range is selected to balance the need for effective metallization and the need to maintain material properties. d. Low temperature (below 1300℃): Lower temperatures are used when the main concern is to avoid thermal stress in the material. An appropriately high sintering temperature is necessary, otherwise the glass phase will not be able to diffuse and migrate. But if the temperature is too high, the metallization strength will be poor. Therefore, choosing the appropriate temperature is crucial to ensure the effectiveness of metallization.
[0006] Therefore, the present invention provides a preparation technology of an ultra-thin metallized ceramic device to prepare an ultra-thin metallized ceramic device with good performance. Summary of the invention
[0007] The purpose of the present invention is to provide a preparation technology of an ultra-thin metallized ceramic device to solve the technical problems in the prior art.
[0008] In order to achieve the above object, the present invention adopts the following technical solutions: The present invention provides a preparation technology of an ultra-thin metallized ceramic device, comprising the following steps: Step (1) pretreatment: cleaning the ceramic device; In the above process, stains, especially organic matter, are removed from the surface of the ceramic device.
[0009] Step (2) patterning the organic film: laser cutting the organic film according to a certain pattern and then coating it on the ceramic device with glue; Step (3) vacuum sputtering: using a vacuum sputtering machine to sputter the pretreated ceramic device so that the nano copper layer is evenly distributed on the ceramic device to obtain a sputtered ceramic device; Step (4) water electroplating: placing the sputtered ceramic device plate in a plating tank for water electroplating, and then washing and drying the plate to obtain a copper-plated ceramic device; Step (5) post-treatment: separating the organic film on the surface of the electroplated ceramic device, and heat-treating the separated ceramic device to obtain a heat-treated ceramic device; Step (6) cleans and dries the heat-treated ceramic device, and finally packages it to obtain an ultra-thin metallized ceramic device.
[0010] Preferably, in step (1), the pretreatment method is: cleaning the ceramic device, the cleaning includes ultrasonic acid reduction cleaning in a thousand-level clearance environment and pure water ultrasonic cleaning in a hundred-level environment; the conductivity of the pure water is controlled at 2-8us / cm; the alkaline washing concentration is 8-10%, the temperature is 50-60°C; the acid washing concentration is 3-5%, the temperature is 30-40°C; the ultrasonic cleaning frequency is 25-35KHz; after cleaning, the temperature is 100°C and the baking time is 1-2h.
[0011] Preferably, in step (1), the ceramic device material includes at least one of aluminum oxide, aluminum nitride, silicon nitride and silicon carbide.
[0012] Preferably, in step (2), the organic film includes at least one of PP and PET; and the glue includes at least one of acrylic glue and epoxy resin glue.
[0013] Preferably, in step (3), the vacuum sputtering method is: placing the ceramic device in a vacuum magnetron sputtering coating machine, using 99.99% pure copper as the cathode target and the ceramic device as the anode, applying a DC voltage of 100-300 V between the cathode target and the anode under the protection of an argon atmosphere, generating a magnetron type abnormal glow discharge in the coating machine, ionizing the argon gas into argon ions which are accelerated by an electric field and bombarded on the cathode copper target, and copper atoms are sputtered out and deposited on the surface of the anode ceramic device to form a nano copper layer; the thickness of the nano copper layer is 50-100 nm.
[0014] Preferably, in step (4), the water electroplating method is: placing the sputtered ceramic device in an acidic copper sulfate plating solution to electroplate copper, using a phosphor copper plate as the anode, and controlling the cathode current density to 3-8A / dm 2 , the temperature is 30-50℃, the time is 10-30min, and the plating solution is stirred by air to form a copper plating layer on the surface of the sputtered ceramic device.
[0015] Preferably, in step (4), the formula of the acidic copper sulfate plating solution is: 150-220 g / L CuSO4·5H2O, 50-80 g / L concentrated H2SO4 with a mass concentration of 98%, and the solvent is water.
[0016] Preferably, in step (4), the cleaning method is: ultrasonic vibration cleaning at 90-100°C for 25-35 minutes; the drying temperature is 100°C; and the copper plating thickness is 3-50 μm.
[0017] Preferably, in the step (5), the method for separating the organic film is: etching with an organic solvent, etching the PP film with isopropyl alcohol or acetone, and etching the PET film with dichloromethane; the heat treatment method is: the atmosphere furnace is evacuated and filled with argon gas, and then heated to 800-900°C and kept warm for 30-60 minutes. After the insulation time is over, the temperature is further increased to 1200-1400°C and kept warm for 30-60 minutes.
[0018] Preferably, in step (6), the cleaning method is: ultrasonic vibration cleaning at 90-100°C for 25-35 minutes; and the drying temperature is 100°C.
[0019] In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are: 1. The vacuum sputtering copper plating and water electroplating copper plating of the present invention are both mature processes, simple control conditions, and ready-made equipment, so the yield rate of ultra-thin metallized ceramic devices can be improved, and the copper plating layer can achieve precise control and adjustment of the copper coating thickness through electroplating copper.
[0020] 2. The metallized ceramic device prepared by the present invention is extremely thin and has a higher level of reliability than the previous metallized ceramic device manufacturing process. It can reduce the protrusions and pits caused by raw materials, process reasons, etc. during the processing; at the same time, this process can be applied to the metallization of special-shaped ceramic devices and perform metallization modeling design on special-shaped ceramic devices.
[0021] 3. The present invention dissolves the separated organic film to recover the metallic copper thereon, which can effectively reduce the cost. The metallization process is scientific and reasonable, simple and easy to implement, and has the characteristics of high return on investment and strong industrial extension. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0023] Figure 1 It is a preparation process flow chart of the preparation technology of the ultra-thin metallized ceramic device of the present invention. DETAILED DESCRIPTION
[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0025] Example 1 See also Figure 1 As shown, this embodiment discloses a preparation technology of an ultra-thin metallized ceramic device, comprising the following steps: Step (1) pretreatment: cleaning the ceramic device, including ultrasonic acid reduction cleaning in a 1000-level clearance environment and pure water ultrasonic cleaning in a 100-level environment; the conductivity of the pure water is controlled at 6us / cm; the alkaline cleaning concentration is 9% and the temperature is 55°C; the acid cleaning concentration is 4% and the temperature is 35°C; the ultrasonic cleaning frequency is 30KHz; after cleaning, baking is performed at a temperature of 100°C for 1.5 hours; The ceramic device material is an alumina ceramic device; Step (2) patterning the organic film: laser cutting the PP organic film according to a certain pattern and then coating it on the ceramic device with acrylic glue; Step (3) vacuum sputtering: placing the ceramic device in a vacuum magnetron sputtering coating machine, using 99.99% pure copper as the cathode target and the ceramic device as the anode, and under the protection of an argon atmosphere, applying a 200 V DC voltage between the cathode target and the anode, generating a magnetron type abnormal glow discharge in the coating machine, ionizing the argon gas into argon ions which are accelerated by an electric field and bombarded on the cathode copper target, and copper atoms are sputtered out and deposited on the surface of the anode ceramic device to form a 75 nm nano-copper layer, and the nano-copper layer is evenly distributed on the ceramic device, thereby obtaining a sputtered ceramic device; Step (4) Water electroplating: Place the sputtered ceramic device in an acidic copper sulfate plating solution for copper electroplating, use the phosphor copper plate as the anode, and control the cathode current density to 6A / dm 2 , the temperature is 40°C, the time is 20 minutes, the plating solution is stirred by air, so that a copper plating layer is formed on the surface of the sputtered ceramic device, and ultrasonic vibration cleaning is performed at 95°C for 30 minutes, and drying is performed at 100°C to obtain a copper-plated ceramic device with a thickness of 30μm; The formula of the acid copper sulfate plating solution is: 180g / L CuSO4·5H2O, 65g / L concentrated H2SO4 with a mass concentration of 98%, and the solvent is water.
[0026] Step (5) post-processing: using isopropyl alcohol to perform etching separation, and heat-treating the separated ceramic device to obtain a heat-treated ceramic device; The heat treatment method is as follows: the atmosphere furnace is evacuated and filled with argon gas, and then heated up. When the temperature reaches 850°C, it is kept at this temperature for 45 minutes. After the holding time is over, the temperature is further raised to 1300°C and kept at this temperature for 45 minutes. Step (6) The heat-treated ceramic device is cleaned by ultrasonic vibration at 95° C. for 30 minutes, dried at 100° C., and finally packaged to obtain an ultra-thin metallized ceramic device.
[0027] Example 2 See also Figure 1 As shown, this embodiment discloses a preparation technology of an ultra-thin metallized ceramic device, comprising the following steps: Step (1) Pretreatment: Clean the ceramic device, including ultrasonic acid reduction cleaning in a 1000-level clearance environment and pure water ultrasonic cleaning in a 100-level clearance environment; the conductivity of the pure water is controlled at 2us / cm; the alkaline cleaning concentration is 10% and the temperature is 50°C; the acid cleaning concentration is 5% and the temperature is 30°C; the ultrasonic cleaning frequency is 35KHz; after cleaning, the device is baked at a temperature of 100°C for 1 hour; The ceramic device material is aluminum nitride ceramic device; Step (2) patterning the organic film: laser cutting the PET organic film according to a certain pattern and then coating it on the ceramic device with epoxy resin glue; Step (3) vacuum sputtering: placing the ceramic device in a vacuum magnetron sputtering coating machine, using 99.99% pure copper as the cathode target and the ceramic device as the anode, applying a 300 V DC voltage between the cathode target and the anode under the protection of an argon atmosphere, generating a magnetron type abnormal glow discharge in the coating machine, ionizing the argon gas into argon ions which are accelerated by an electric field and bombarded on the cathode copper target, and copper atoms are sputtered out and deposited on the surface of the anode ceramic device to form a 100 nm nano-copper layer, and the nano-copper layer is evenly distributed on the ceramic device, thereby obtaining a sputtered ceramic device; Step (4) Water electroplating: Place the sputtered ceramic device in an acidic copper sulfate plating solution for copper electroplating, use the phosphor copper plate as the anode, and control the cathode current density to 8A / dm 2 , the temperature is 30°C, the time is 30 minutes, the plating solution is stirred by air, so that a copper plating layer is formed on the surface of the sputtered ceramic device, and ultrasonic vibration cleaning is performed at 90°C for 35 minutes, and drying is performed at 100°C to obtain a copper-plated ceramic device with a thickness of 3μm; The formula of the acid copper sulfate plating solution is: 220g / L CuSO4·5H2O, 50g / L concentrated H2SO4 with a mass concentration of 98%, and the solvent is water.
[0028] Step (5) post-treatment: using dichloromethane to perform etching separation, and heat-treating the separated ceramic device to obtain a heat-treated ceramic device; The heat treatment method is as follows: the atmosphere furnace is evacuated and filled with argon gas, and then heated up. When the temperature reaches 900°C, it is kept warm for 30 minutes. After the heat preservation time is over, the temperature is further raised to 1400°C and kept warm for 30 minutes. Step (6) The heat-treated ceramic device is cleaned by ultrasonic vibration at 100° C. for 25 minutes, dried at 100° C., and finally packaged to obtain an ultra-thin metallized ceramic device.
[0029] Example 3 See also Figure 1 As shown, this embodiment discloses a preparation technology of an ultra-thin metallized ceramic device, comprising the following steps: Step (1) pretreatment: cleaning the ceramic device, including ultrasonic acid reduction cleaning in a 1000-level clearance environment and pure water ultrasonic cleaning in a 100-level environment; the conductivity of the pure water is controlled at 8us / cm; the alkaline cleaning concentration is 8% and the temperature is 60°C; the acid cleaning concentration is 3% and the temperature is 40°C; the ultrasonic cleaning frequency is 25KHz; after cleaning, baking is performed at a temperature of 100°C for 2 hours; The ceramic device material is a silicon nitride ceramic device; Step (2) patterning the organic film: laser cutting the PP organic film according to a certain pattern and then coating it on the ceramic device with acrylic glue; Step (3) vacuum sputtering: placing the ceramic device in a vacuum magnetron sputtering coating machine, using 99.99% pure copper as the cathode target and the ceramic device as the anode, applying a 100V DC voltage between the cathode target and the anode under the protection of an argon atmosphere, generating a magnetron type abnormal glow discharge in the coating machine, ionizing the argon gas into argon ions which are accelerated by an electric field and bombarded on the cathode copper target, and copper atoms are sputtered out and deposited on the surface of the anode ceramic device to form a 100nm nano-copper layer, and the nano-copper layer is evenly distributed on the ceramic device, thereby obtaining a sputtered ceramic device; Step (4) Water electroplating: Place the sputtered ceramic device in an acidic copper sulfate plating solution for copper electroplating, use the phosphor copper plate as the anode, and control the cathode current density to 3A / dm 2 , the temperature is 50°C, the time is 10 minutes, the plating solution is stirred by air, so that a copper plating layer is formed on the surface of the sputtered ceramic device, and ultrasonic vibration cleaning is performed at 100°C for 25 minutes, and drying is performed at 100°C to obtain a copper-plated ceramic device with a thickness of 50μm; The formula of the acid copper sulfate plating solution is: 150g / L CuSO4·5H2O, 80g / L concentrated H2SO4 with a mass concentration of 98%, and the solvent is water.
[0030] Step (5) post-processing: using acetone to perform etching separation, and heat-treating the separated ceramic device to obtain a heat-treated ceramic device; The heat treatment method is as follows: the atmosphere furnace is evacuated and filled with argon gas, and then heated up. When the temperature reaches 800°C, it is kept warm for 60 minutes. After the heat preservation time is over, the temperature is further raised to 1200°C and kept warm for 60 minutes. Step (6) The heat-treated ceramic device is cleaned by ultrasonic vibration at 90° C. for 35 minutes, dried at 100° C., and finally packaged to obtain an ultra-thin metallized ceramic device.
[0031] Example 4 See also Figure 1 As shown, this embodiment discloses a preparation technology of an ultra-thin metallized ceramic device, comprising the following steps: Step (1) Pretreatment: Clean the ceramic device, including ultrasonic acid reduction cleaning in a 1000-level clearance environment and pure water ultrasonic cleaning in a 100-level clearance environment; the conductivity of the pure water is controlled at 3us / cm; the alkaline cleaning concentration is 9% and the temperature is 52°C; the acid cleaning concentration is 4% and the temperature is 32°C; the ultrasonic cleaning frequency is 32KHz; after cleaning, the device is baked at a temperature of 100°C for 1 hour; The ceramic device material is silicon carbide ceramic device; Step (2) patterning the organic film: laser cutting the PET organic film according to a certain pattern and then coating it on the ceramic device with epoxy resin glue; Step (3) vacuum sputtering: placing the ceramic device in a vacuum magnetron sputtering coating machine, using 99.99% pure copper as the cathode target and the ceramic device as the anode, applying a 150V DC voltage between the cathode target and the anode under the protection of an argon atmosphere, generating a magnetron type abnormal glow discharge in the coating machine, ionizing the argon gas into argon ions which are accelerated by an electric field and bombarded on the cathode copper target, and copper atoms are sputtered out and deposited on the surface of the anode ceramic device to form an 80nm nano-copper layer, and the nano-copper layer is evenly distributed on the ceramic device, thereby obtaining a sputtered ceramic device; Step (4) Water electroplating: Place the sputtered ceramic device in an acidic copper sulfate plating solution for copper electroplating, use the phosphor copper plate as the anode, and control the cathode current density to 4A / dm 2 , the temperature is 45°C, the time is 15 minutes, the plating solution is stirred by air, so that a copper plating layer is formed on the surface of the sputtered ceramic device, and ultrasonic vibration cleaning is performed at 95°C for 30 minutes, and drying is performed at 100°C to obtain a copper-plated ceramic device with a thickness of 10μm; The formula of the acid copper sulfate plating solution is: 160g / L CuSO4·5H2O, 70g / L concentrated H2SO4 with a mass concentration of 98%, and the solvent is water.
[0032] Step (5) post-treatment: using dichloromethane to perform etching separation, and heat-treating the separated ceramic device to obtain a heat-treated ceramic device; The heat treatment method is as follows: the atmosphere furnace is evacuated and filled with argon gas, and then heated up. When the temperature reaches 850°C, it is kept at this temperature for 50 minutes. After the holding time is over, the temperature is further raised to 1300°C and kept at this temperature for 50 minutes. Step (6) The heat-treated ceramic device is cleaned by ultrasonic vibration at 95° C. for 30 minutes, dried at 100° C., and finally packaged to obtain an ultra-thin metallized ceramic device.
[0033] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.
[0034] The preferred embodiments of the present invention disclosed above are only used to help explain the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to only specific implementation methods. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.
Claims
1. A preparation technology for an ultra-thin metallized ceramic device, characterized in that: The following steps are involved: Step (1) pretreatment: cleaning the ceramic device; Step (2) patterning the organic film: laser cutting the organic film according to a certain pattern and then coating it on the ceramic device with glue; Step (3) vacuum sputtering: using a vacuum sputtering machine to sputter the pretreated ceramic device so that the nano copper layer is evenly distributed on the ceramic device to obtain a sputtered ceramic device; Step (4) water electroplating: placing the sputtered ceramic device plate in a plating tank for water electroplating, and then washing and drying the plate to obtain a copper-plated ceramic device; Step (5) post-treatment: separating the organic film on the surface of the electroplated ceramic device, and heat-treating the separated ceramic device to obtain a heat-treated ceramic device; Step (6) cleans and dries the heat-treated ceramic device, and finally packages it to obtain an ultra-thin metallized ceramic device.
2. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In the step (1), the pretreatment method is: cleaning the ceramic device, the cleaning includes ultrasonic acid reduction cleaning in a thousand-level clearance environment and pure water ultrasonic cleaning in a hundred-level environment; the conductivity of the pure water is controlled at 2-8us / cm; the alkaline washing concentration is 8-10%, the temperature is 50-60°C; the acid washing concentration is 3-5%, the temperature is 30-40°C; the ultrasonic cleaning frequency is 25-35KHz; after cleaning, the temperature is 100°C and the baking time is 1-2h.
3. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In the step (1), the ceramic device material includes at least one of aluminum oxide, aluminum nitride, silicon nitride and silicon carbide.
4. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In the step (2), the organic film includes at least one of PP and PET; and the glue includes at least one of acrylic glue and epoxy resin glue.
5. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In the step (3), the vacuum sputtering method is as follows: placing the ceramic device in a vacuum magnetron sputtering coating machine, using 99.99% pure copper as the cathode target and the ceramic device as the anode, applying a 100-300 volt DC voltage between the cathode target and the anode under the protection of an argon atmosphere, generating a magnetron type abnormal glow discharge in the coating machine, ionizing the argon gas into argon ions which are accelerated by an electric field and bombarded on the cathode copper target, and copper atoms are sputtered out and deposited on the surface of the anode ceramic device to form a nano copper layer; the thickness of the nano copper layer is 50-100 nm.
6. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In step (4), the water electroplating method is: placing the sputtered ceramic device in an acidic copper sulfate plating solution to electroplate copper, using a phosphor copper plate as the anode, and controlling the cathode current density to 3-8A / dm 2 , the temperature is 30-50℃, the time is 10-30min, and the plating solution is stirred by air to form a copper plating layer on the surface of the sputtered ceramic device.
7. The preparation technology of the ultra-thin metallized ceramic device according to claim 6, characterized in that: In step (4), the formula of the acid copper sulfate plating solution is: 150-220 g / L CuSO4·5H2O, 50-80 g / L concentrated H2SO4 with a mass concentration of 98%, and the solvent is water.
8. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In the step (4), the cleaning method is: ultrasonic vibration cleaning at 90-100°C for 25-35 minutes; the drying temperature is 100°C; the copper plating thickness is 3-50 μm.
9. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In the step (5), the method for separating the organic film is: etching with an organic solvent, etching the PP film with isopropyl alcohol or acetone, and etching the PET film with dichloromethane; the heat treatment method is: the atmosphere furnace is evacuated and filled with argon gas, and then heated to 800-900°C and kept warm for 30-60 minutes. After the insulation time is over, the temperature is further increased to 1200-1400°C and kept warm for 30-60 minutes.
10. The preparation technology of the ultra-thin metallized ceramic device according to claim 1, characterized in that: In the step (6), the cleaning method is: ultrasonic vibration cleaning at 90-100°C for 25-35 minutes; the drying temperature is 100°C.