Multi-channel test circuit

Abstract

The present application relates to a multi-channel test circuit. The multi-channel test circuit includes: an aging module, n parallel switching modules, n driving modules, and a resistance measurement module. The output interface of the switching module is used to connect the power device to be tested, and the input interface is respectively connected to the aging module, the driving module, and the resistance measurement module. The aging module is used to perform an aging test on the power device to be tested; the resistance measurement module is used to perform dynamic resistance conduction measurement on the power device to be tested after aging; the switching module is used to switch the on-off state of the power device to be tested and the aging module, the driving module, and the resistance measurement module; the driving module is used to control the conduction state of the switching module and the aging module or the resistance measurement module in response to an external control signal, and perform mode switching on the power device to be tested. The circuit reduces the measurement error caused by device movement, improves test efficiency, and ensures test reliability.

Description

Technical Field

[0001] The present application relates to the field of device testing technology, and in particular to a multi-channel testing circuit. Background Art

[0002] Power devices (e.g., GaN power devices) play a key role in various electronic devices and power systems, but their applications face many reliability issues, and power devices generally operate under high voltage, high power, and high temperature conditions. In order to ensure their practical application in complex environments, it is very important to study the reliability of the devices and the mechanism of failure. Among them, the current collapse effect has become the most critical issue in the use of power devices, resulting in an increase in dynamic on-resistance after switching from the high-voltage off state. At present, high temperature reverse bias (HTRB) and high temperature gate bias (HTGB) stress tests are often used to evaluate the degradation mechanism of GaN power devices.

[0003] In the test circuit of the related art, for collecting dynamic on-resistance, the device is taken out of the aging module after a test cycle, and then its dynamic on-resistance is evaluated, resulting in low test efficiency and low reliability. The related art lacks a circuit that can improve test efficiency and ensure test reliability. Summary of the invention

[0004] Based on this, it is necessary to provide a multi-channel test circuit that can improve test efficiency and ensure test reliability.

[0005] A multi-channel test circuit, comprising: an aging module, n parallel switching modules, n driving modules, and a resistance measurement module, wherein the output interface of the switching module is used to connect a power device to be tested, and the input interface is respectively connected to the aging module, the driving module, and the resistance measurement module, and any one of the driving module and the resistance measurement module does not turn on the power device to be tested at the same time as the aging module, wherein:

[0006] The aging module is used to perform an aging test on the power device to be tested;

[0007] The resistance measurement module is used to perform dynamic resistance conduction measurement on the aged power device to be tested;

[0008] The switching module is used to switch the on / off state of the power device to be tested and the aging module, the driving module and the resistance measuring module;

[0009] The driving module is used to control the conduction state of the switching module and the aging module or the resistance measurement module in response to an external control signal, so as to perform mode switching on the power device to be tested.

[0010] In one embodiment, the output interface includes a first output interface, a second output interface and a third output interface, the first output interface is connected to the first end of the power device to be tested, the second output interface is connected to the second end of the power device to be tested, and the third output interface is connected to the third end of the power device to be tested.

[0011] In one embodiment, the switching module includes a first switch device, a second switch device and a third switch device, one end of the first switch device is electrically connected to the first output interface, and the other end is electrically connected to the resistance measurement module, one end of the second switch device is electrically connected to the second output interface, and the other end is electrically connected to the driving module, one end of the third switch device is connected to the aging module, and the other end is connected to the connection line between the second output interface and the second switch device, or the other end of the third switch device is connected to the other end of the first switch device and the connection line of the resistance measurement module.

[0012] In one embodiment, the number of the third switching devices is two, one end of one of the third switching devices is connected to the aging module, and the other end is connected to the connection line between the second output interface and the second switching device, and the other end of the third switching device is connected to the aging module, and the other end is connected to the other end of the first switching device and the connection line of the resistance measurement module.

[0013] In one embodiment, the multi-channel test circuit includes a power supply module, the resistance measurement module includes a clamp circuit and a load circuit, one end of the clamp circuit is connected to the load circuit, and the other end is grounded, the other end of the load circuit is connected to the power supply module, and the other end of the power supply module is grounded, wherein:

[0014] The clamping circuit is used to ensure that the variation of the measured value of the power device under test during the on and off process is within a preset range;

[0015] The load circuit is used to prevent the capacitor in the power module from being broken down due to a sudden current when the power device to be tested is subjected to dynamic resistance conduction measurement.

[0016] In one embodiment, the clamping circuit includes a first diode, a first resistor, a first capacitor and a low-voltage DC power supply, the anode of the first diode is connected to one end of the first resistor, the cathode of the first diode is connected to the power device to be tested, the capacitor is connected in parallel with the low-voltage DC power supply, one end of the parallel connection is grounded, and the other end is electrically connected to the other end of the first resistor.

[0017] In one embodiment, the load circuit includes a power device and an inductor, the power device and the inductor are connected in parallel, one end of the parallel connection is electrically connected to the power device to be tested, and the other end of the parallel connection is connected to the power module.

[0018] In one embodiment, the multi-channel test circuit further includes a first voltage acquisition device and a second voltage acquisition device, wherein the first voltage acquisition device is disposed at the third end of the power device to be tested, and the second voltage acquisition device is disposed between the first diode and the first resistor, the first voltage acquisition device is used to acquire the voltage at the third end of the power device to be tested, and the second voltage acquisition device is used to acquire the clamping point voltage value at both ends of the first diode.

[0019] In one embodiment, the external control signal includes a first external control signal and a second external control signal, and the driving module is used to drive the switching module to turn on the aging module in response to the first external control signal to perform an aging test on the power device to be tested;

[0020] When the aging test is completed, in response to the second external control signal, the switching module is driven to turn on the resistance measurement module to perform dynamic resistance on-state measurement on the power device to be tested.

[0021] In one embodiment, the aging module includes a first aging module and a second aging module, and the switching module includes a first switching module connected to the first aging module and a second switching module connected to the second aging module;

[0022] The driving module is further used to respond to a first external control signal and, according to a signal type of the first external control signal, drive a target switching module corresponding to the signal type to close, turn on the aging module, and perform an aging test on the power device to be tested; the target switching module is the first switching module or the second switching module;

[0023] When the aging test is completed, in response to a second external control signal, the target switching module is driven to be disconnected, the resistance measurement module is turned on, and a dynamic resistance on-state measurement is performed on the power device to be tested.

[0024] The above-mentioned multi-channel test circuit is configured with a plurality of parallel switching modules in the test circuit, each of which is respectively connected to a corresponding driving module. For each driving module, each driving module responds to an external control signal to control the conduction state of the switching module and the aging module or the resistance measurement module, switches the on-off state of the power device to be tested and the aging module, the driving module and the resistance measurement module, performs mode switching on the power device to be tested, and realizes switching between aging test and dynamic resistance conduction measurement. The switching of the two modes can be realized on one test circuit through mode switching, realizing the integration of measurement and aging, reducing the measurement error caused by device movement, improving the test efficiency and ensuring the test reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 A schematic diagram of the structure of a multi-channel test circuit according to an embodiment;

[0027] Figure 2 for Figure 1 A module structure for switching modules in the middle;

[0028] Figure 3 for Figure 1 Another module structure of the switching module;

[0029] Figure 4 for Figure 1 Another module structure of the switching module;

[0030] Figure 5 for Figure 1 A module structure of a medium resistance measurement module;

[0031] Figure 6 1 is a structure of a clamping circuit in an embodiment;

[0032] Figure 7 is a structure of a load circuit in an embodiment;

[0033] Figure 8 A multi-channel test circuit is provided in accordance with a specific embodiment.

[0034] Explanation of the reference numerals: 100, aging module; 200, switching module; 300, driving module; 400, resistance measurement module; 500, power device to be tested; 600, power supply module; 201, first switching device; 202, second switching device; 203, third switching device; 2031, third switching device one; 2032, third switching device two; 401, clamping circuit; 402, load circuit. DETAILED DESCRIPTION

[0035] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0037] It is understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0038] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if the connected circuits, modules, units, etc. have electrical signals or data transmission between each other.

[0039] It can be understood that “at least one” means one or more, “plurality” means two or more, and “at least part of an element” means part or all of an element.

[0040] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0041] It is understandable that the reliability of power devices is the last problem that needs to be solved in their application. It is also a very important problem that directly restricts the actual application of the device. At present, common reliability tests include HTGB and HTRB aging experiments, and the test parameters include dynamic on-resistance, threshold voltage, leakage current and other parameters. At present, the online collection of dynamic parameters during the aging experiment is still a difficult point. As the aging time increases, how to test the dynamic on-resistance of the device changes with the increase of aging time more concisely and accurately is a major problem that needs to be solved in reliability testing.

[0042] In the related art, the aging test of power devices is implemented based on independent aging modules and resistance measurement modules. This method cannot ensure the measurement reliability and test efficiency of the dynamic on-resistance of power devices. Therefore, in order to solve this technical problem, a multi-channel test circuit capable of online switching of aging and testing is proposed.

[0043] like Figure 1 As shown, a multi-channel test circuit in an embodiment includes: an aging module 100, n parallel switching modules 200, n driving modules 300, and a resistance measurement module 400. The output interface of the switching module 200 is used to connect the power device 500 to be tested, and the input interface is respectively connected to the aging module 100, the driving module 300 and the resistance measurement module 400. Any one of the driving module 300 and the resistance measurement module 400 is not turned on at the same time as the aging module 100. n is a positive integer, where:

[0044] The aging module 100 is used to perform an aging test on the power device 500 to be tested; wherein the power device 500 to be tested may be, but is not limited to, various types of GaN power devices, such as p-GaN, cascode structure, etc. The aging test includes, but is not limited to, a high temperature gate bias test HTGB, and / or a high temperature reverse bias test HTRB. When the aging module 100 performs an aging test on the power device 500 to be tested, the aging test may be achieved by connecting the aging module 100 to an external aging device.

[0045] The resistance measurement module 400 is used to perform dynamic resistance conduction measurement on the aged power device 500 to be tested. The dynamic resistance conduction measurement can be understood as measuring the resistance measured when the power device 500 to be tested is turned on.

[0046] The switching module 200 is used to switch the on / off state of the power device to be tested 500 and the aging module 100, the driving module 300 and the resistance measurement module 400; wherein, when the power device to be tested 500 and the aging module 100 are turned on to complete aging, the switching module can be used to disconnect the electrical connection between the power device to be tested 500 and the aging module 100, and connect the electrical connection between the power device to be tested 500 and the resistance measurement module 400.

[0047] The driving module 300 is used to control the conduction state of the switching module 200 and the aging module 100 or the resistance measurement module 400 in response to an external control signal, and perform mode switching on the power device 500 to be tested.

[0048] Each driving module 300 is connected to a switching module 200, and the driving module 300 responds to an external control signal to control the conduction state of the channel between the switching module 200 and the aging module 100 or the resistance measurement module 400 to switch the aging channel and the test channel on the test board. The driving module 300 here can be all driving modules 300 or several driving modules 300, which is not specifically limited here.

[0049] Exemplarily, if the current state is the aging mode of the power device 500 to be tested, the driving module 300 can respond to an external control signal, control the switching module 200 to disconnect from the aging module 100, connect the resistance measurement module 400, switch the power device 500 to be tested from the aging mode to the test mode, and measure the dynamic on-resistance of the power device 500 to be tested.

[0050] If the current state is the test mode of the power device 500 to be tested, the driving module 300 can respond to an external control signal, control the switching module 200 to disconnect from the resistance measurement module 400, connect the aging module 100, switch the power device 500 to be tested from the test mode to the aging mode, and perform aging treatment on the power device 500 to be tested.

[0051] The above-mentioned multi-channel test circuit is configured with multiple parallel switching modules in the test circuit, each switching module is respectively connected to a corresponding driving module, and for each driving module, each driving module responds to an external control signal to control the conduction state of the switching module and the aging module or the resistance measurement module, switches the on-off state of the power device to be tested and the aging module, the driving module and the resistance measurement module, performs mode switching on the power device to be tested, and realizes switching between aging test and dynamic resistance conduction measurement. The switching of the two modes can be realized on one test circuit through mode switching, realizing the integration of measurement and aging, reducing the measurement error caused by device movement, improving test efficiency and ensuring test reliability.

[0052] In an exemplary embodiment, the output interface of the switching module 200 includes a first output interface, a second output interface and a third output interface, the first output interface is connected to the first end of the power device 500 to be tested, the second output interface is connected to the second end of the power device 500 to be tested, and the third output interface is connected to the third end of the power device 500 to be tested. It can be understood that the number of output interfaces of the switching module 200 is related to the structure of the power device 500 to be tested. In the case where the power device to be tested is a GaN power device, the first end of the power device 500 to be tested can be a drain, the second end can be a gate, and the third end can be a source. The power device to be tested can be arranged on a multi-channel test circuit in the form of a patch and / or a plug-in.

[0053] like Figure 2 and Figure 3 As shown, the switching module 200 includes a first switch device 201, a second switch device 202 and a third switch device 203, one end of the first switch device 201 is electrically connected to the first output interface, and the other end is electrically connected to the resistance measurement module 400, one end of the second switch device 202 is electrically connected to the second output interface, and the other end is electrically connected to the driving module 300, one end of the third switch device 203 is connected to the aging module 100, and the other end is connected to the connection line between the second output interface and the second switch device 202, or the other end of the third switch device 203 is connected to the other end of the first switch device 201 and the connection line of the resistance measurement module 400.

[0054] It is understandable that the switching device in the switching module 200 can be but is not limited to a relay, and the opening and closing of the switching device can be achieved through PWM (pulse width modulation) control technology. The specific implementation method can be achieved through existing methods and will not be repeated here.

[0055] By switching the first switch device 201, the second switch device 202 and the third switch device 203 in the switching module 200, under the control of an external signal, the switching between the aging mode and the test mode is realized online by controlling the closing and opening of the first switch device 201, the second switch device 202 and the third switch device 203.

[0056] For example, when one end of the third switch device 203 is connected to the aging module 100 and the other end is connected to the connection line between the second output interface and the second switch device 202, the second switch device 202 and the first switch device 201 are controlled to be disconnected, and the third switch device 203 is closed, so that the aging module can be turned on and enter the aging mode. At this time, the resistance measurement module is in a disconnected state.

[0057] When one end of the third switch device 203 is connected to the aging module 100 and the other end of the third switch device 203 is connected to the line connecting the other end of the first switch device 201 and the resistance measurement module 400, the second switch device 202 is controlled to be disconnected, and the first switch device 201 and the third switch device 203 are closed, the aging module can be turned on and enter the aging mode. At this time, the resistance measurement module is in a disconnected state.

[0058] For any connection mode of the third switch device 203, the third switch device 203 is controlled to be disconnected, and the second switch device 202 and the first switch device 201 are closed, so that the resistance measurement module 400 can be turned on to enter the test mode, and the aging module is in the disconnected state.

[0059] The structure of the switching module 200 can realize the mode switching between aging and testing online, avoid offline mode conversion, reduce the measurement error caused by device movement, and ensure the accuracy and efficiency of the test of the power device to be tested.

[0060] like Figure 4 As shown, the switching module 200 includes a first switch device 201, a second switch device 202 and two third switch devices. Accordingly, there are two aging modules 100, and the aging types of the two aging modules may be different. The two third switch devices are the third switch device 1 2031 and the third switch device 2 2032. One end of the first switch device 201 is electrically connected to the first output interface, and the other end is electrically connected to the resistance measurement module 400. One end of the second switch device 202 is electrically connected to the second output interface, and the other end is electrically connected to the driving module 300. One end of the third switch device 1 2031 is connected to the aging module 100, and the other end is connected to the connection line between the second output interface and the second switch device 202. One end of the third switch device 2 2032 is connected to the aging module 100, and the other end of the third switch device 2 2032 is connected to the connection line between the other end of the first switch device 201 and the resistance measurement module 400. It can be understood that in the case where there are two third switch devices, the switching of the control aging mode and the test mode can be realized in the above manner, which will not be repeated here.

[0061] It is understandable that the integration process will encounter problems with the accuracy of dynamic on-resistance measurement. The measured value of dynamic on-resistance is in the millivolt level, and the voltage is in the hundred-volt level when the device is turned off. In order to ensure the measurement accuracy of on-resistance measurement.

[0062] like Figure 5As shown, the multi-channel test circuit also includes a power supply module 600, the resistance measurement module 400 includes a clamp circuit 401 and a load circuit 402, one end of the clamp circuit 401 is connected to the load circuit, and the other end is grounded, the other end of the load circuit 402 is connected to the power supply module 600, and the other end of the power supply module 600 is grounded, and the power supply module 600 includes a high-voltage DC power supply and a capacitor connected in parallel with the high-voltage DC power supply, wherein:

[0063] The clamp circuit 401 is used to ensure that the change in the measured value of the power device under test during the on and off process is within a preset range. The load circuit 402 is used to prevent the capacitor in the power module 600 from being broken down due to a sudden change in current when the power device under test is subjected to dynamic resistance on measurement. It is understandable that the clamp circuit 401 can be an active clamp circuit or a passive clamp circuit, and the specific setting can be determined according to actual needs.

[0064] like Figure 6 As shown, the clamping circuit 401 includes a first diode D1, a first resistor R1, a first capacitor C1 and a low-voltage DC power supply V, wherein the anode of the first diode D1 is connected to one end of the first resistor R1, the cathode of the first diode D1 is connected to the power device to be measured, and the first capacitor C1 is connected in parallel with the low-voltage DC power supply V, one end of the parallel connection is grounded, and the other end is electrically connected to the other end of the first resistor R1. Among them, D1, R1, C1 and the low-voltage DC source form a clamping circuit, the principle of which is to ensure that the measured value of the voltage measurement point between D1 and R1 will not change too much during the conduction and shutdown process of the power device to be measured, because if the voltage measurement range is increased, the measurement accuracy of the low voltage value will be reduced, thereby ensuring the accuracy of the low voltage measurement.

[0065] like Figure 7 As shown, the load circuit 402 includes a power device S1 and an inductor L1, the power device S1 and the inductor L1 are connected in parallel, one end of the parallel connection is electrically connected to the switching module, and the other end of the parallel connection is connected to the power module. In this way, the inductor L1 is connected in parallel with the power device S1, and the inductor has the characteristic of preventing sudden current changes. When the current needs to change suddenly, the inductor will generate a reverse electromotive force to resist this change, thereby protecting the capacitor in the circuit from the influence of sudden current changes.

[0066] In order to realize the dynamic on-resistance measurement of the power device 500 to be tested, in an exemplary embodiment, the multi-channel test circuit further includes a sampling resistor Isen, a first voltage acquisition device and a second voltage acquisition device, the sampling resistor Isen is arranged between the third terminal of the power device 500 to be tested and the ground, the first voltage acquisition device is arranged between the second resistor and the connection line of the third terminal of the power device 500 to be tested, the second voltage acquisition device is arranged between the first diode D1 and the first resistor R1, the first voltage acquisition device is used to acquire the voltage of the third terminal of the power device 500 to be tested, the second voltage acquisition device is used to acquire the clamping point voltage value at both ends of the first diode, the current value passing through the power device 500 to be tested can be determined based on the voltage acquired by the first voltage acquisition device and the resistance value of the sampling resistor Isen, the voltage at both ends of the power device 500 to be tested can be determined based on the voltage acquired by the second voltage acquisition device and the voltage at both ends of the first diode, and then the on-resistance of the power device 500 to be tested can be determined based on the voltage and current at both ends of the power device 500 to be tested. Based on this control circuit, automatic calibration error can be realized under different temperature and current conditions.

[0067] Accordingly, for the multi-channel test circuit in any of the above embodiments, when the external control signal includes a first external control signal and a second external control signal, the driving module 300 is used to drive the switching module 200 to turn on the aging module 100 in response to the first external control signal to perform an aging test on the power device to be tested 500; when the aging test is completed, in response to the second external control signal, the driving module 200 turns on the resistance measurement module 400 to perform dynamic resistance conduction measurement on the power device to be tested 500. The first external control signal may be an aging test signal, and the second external control signal may be an on-resistance measurement signal.

[0068] In this way, the integrated aging measurement design method based on the channel test board can reduce the measurement error caused by device movement, and realize the online conversion of aging test and on-resistance measurement, ensuring the reliability of data measurement and test efficiency.

[0069] In an exemplary embodiment, when the aging module 100 includes a first aging module 100 and a second aging module 100, the corresponding switching module 200 also includes a first switching module connected to the first aging module 100 and a second switching module connected to the second aging module 100; when two aging modules 100 are included, the first switching module and the second switching module can share a first switch device and a second switch device, and one end of two third switch devices are connected to the aging module 100, one end of one third switch device is connected to the connection line of the second output interface and the second switch device, and the other end of the other third switch device is connected to the connection line of the other end of the first switch device and the resistance measurement module 400. The aging test implemented by the first aging module 100 and the second aging module 100 can be, but not limited to, any two of the HTRB, HTGB, and PC aging experiments. The setting positions of the first aging module 100 and the second aging module 100 are related to the aging type. By setting two different types of aging modules 100, different aging modes can be performed on the power device 500 to be tested. It can be understood that the aging module 100 in the multi-channel test circuit can be an aging circuit, and the aging circuit performs an aging test on the power device to be tested by connecting to an external aging device.

[0070] Furthermore, the driving module 300 is also used to respond to the first external control signal, according to the signal type of the first external control signal, drive the target switching module 200 corresponding to the signal type to close, turn on the aging module 100, and perform an aging test on the power device 500 to be tested; the target switching module 200 is the first switching module or the second switching module; when the aging test is completed, in response to the second external control signal, drive the target switching module to disconnect, and the on-resistance measurement module 400 to perform dynamic resistance conduction measurement on the power device 500 to be tested. In this way, the method of integrated design of measurement and aging based on the channel test board can reduce the measurement error caused by device movement, and realize the online conversion of aging test and dynamic on-resistance measurement, ensuring the reliability of data measurement and test efficiency.

[0071] In an exemplary embodiment, the power device 500 to be tested is a GaN power device, and the multi-channel test circuit also includes a first current acquisition device, which is arranged at the gate of the power device 500 to be tested and is used to collect the gate current of the power device 500 to be tested during the aging process. The gate current of the power device 500 to be tested during the aging process can be obtained through the current acquisition device, which can be used for failure analysis of the power device 500 to be tested.

[0072] In an exemplary embodiment, the power device 500 to be tested is a GaN power device, and the multi-channel test circuit also includes a second current acquisition device, which is arranged at the drain of the power device 500 to be tested, and is used to collect the drain current of the power device 500 to be tested during the aging process. The drain current of the power device 500 to be tested during the aging process can be obtained through the current acquisition device, which can be used for failure analysis of the power device 500 to be tested.

[0073] In an exemplary embodiment, a multi-channel test circuit is provided, which includes: a power module 600, two aging modules 100, n parallel switching modules 200, n driving modules 300, a resistance measurement module 400, a sampling resistor, a first voltage acquisition device, and a second voltage acquisition device. The output interface of the switching module 200 is used to connect the power device to be tested 500, and the input interface is respectively connected to the aging module 100, the driving module, and the resistance measurement module 400. The output interface includes a first output interface, a second output interface, and a third output interface. The first output interface is connected to the first end of the power device to be tested 500, the second output interface is connected to the second end of the power device to be tested 500, and the third output interface is connected to the third end of the power device to be tested 500.

[0074] Among them, the switching module 200 includes a first switching device 201, a second switching device 202 and two third switching devices, one end of the first switching device is electrically connected to the first output interface, and the other end is electrically connected to the resistance measurement module 400, one end of the second switching device is electrically connected to the second output interface, and the other end is electrically connected to the driving module, one end of the two third switching devices is connected to the aging module 100, the other end of one third switching device is connected to the connection line between the second output interface and the second switching device, and the other end of the other third switching device is connected to the connection line between the other end of the first switching device and the resistance measurement module 400.

[0075] The resistance measurement module 400 includes a clamp circuit 401 and a load circuit 402. One end of the clamp circuit 401 is connected to the load circuit 402, and the other end is grounded. The other end of the load circuit 402 is connected to the power module 600, and the other end of the power module 600 is grounded. The clamp circuit 401 includes a first diode, a first resistor, a first capacitor and a low-voltage DC power supply. The anode of the first diode is connected to one end of the first resistor, the cathode of the first diode is connected to the power device to be measured, and the capacitor is connected in parallel with the low-voltage DC power supply, one end of the parallel connection is grounded, and the other end is electrically connected to the other end of the first resistor. The load circuit 402 includes a power device and an inductor. The power device and the inductor are connected in parallel, and one end of the parallel connection is electrically connected to the switching module 200, and the other end of the parallel connection is connected to the power module 600.

[0076] The sampling resistor is arranged between the third terminal of the power device 500 to be tested and the ground wire, the first voltage acquisition device is arranged between the second resistor and the connection line of the third terminal of the power device 500 to be tested, the second voltage acquisition device is arranged between the first diode and the first resistor, the first voltage acquisition device is used to collect the voltage of the third terminal of the power device 500 to be tested, and the second voltage acquisition device is used to collect the clamping point voltage value at both ends of the first diode.

[0077] The above multi-channel test circuit can collect the changes in the dynamic on-resistance of GaN power devices during the aging process, and then reflect the impact of environmental factors such as high temperature and high voltage on the reliability of power devices. The method of integrating the test mode and the aging mode design eliminates the inaccuracy of parameter collection caused by artificial movement of devices, and more comprehensively analyzes the reliability of power devices and explores their failure mechanisms, which is of great significance for further improving device reliability. In addition, a single device can be aged, and multiple devices can be aged together, which improves test efficiency.

[0078] The following is a multi-channel test circuit in a specific embodiment based on the multi-channel test circuit described above. Figure 8 As shown, two aging tests, HTGB stress and HTRB stress, can be performed on the power device under test, n is 4, and the four driver modules 300 are Driver1, Driver2, Driver3 and Driver4, respectively, and Driver1, Driver2, Driver3 and Driver4 are respectively connected to PWM control1, PWM control2, PWM control3 and PWM control4. The power module 600 includes a power supply V_bus and a capacitor C2 connected in parallel with the power supply.

[0079] The power device 500 to be tested connected to each driving module is a GaN power device, namely DUT1, DUT2, DUT3 and DUT4, and the four parallel switching modules 200 include four switching devices in the first switching module, namely relays Relay1_1, Relay1_2, Relay1_3 and Relay_HTRB, the second switching module includes four switching devices, namely relays Relay2_1, Relay2_2, Relay2_3 and Relay_HTRB, the third switching module includes four switching devices, namely relays Relay3_1, Relay3_2, Relay3_3 and Relay_HTRB, and the fourth switching module includes four switching devices, namely relays Relay4_1, Relay4_2, Relay4_3 and Relay_HTRB. It can be seen that the four switching modules 200 share Relay_HTRB.

[0080] The load circuit 402 includes a power device S1 and an inductor L1, the power device S1 and the inductor L1 are connected in parallel, one end of the parallel connection is electrically connected to the switching module, and the other end of the parallel connection is connected to the power module. The clamping circuit 401 includes a first diode D1, a first resistor R1, a first capacitor C1 and a low-voltage DC power supply V, the anode of the first diode D1 is connected to one end of the first resistor R1, the cathode of the first diode D1 is connected to the power device to be tested, the first capacitor C1 is connected in parallel to the low-voltage DC power supply V, one end of the parallel connection is grounded, and the other end is electrically connected to the other end of the first resistor R1. Figure 8 The multi-channel test circuit shown in FIG. 1 includes multiple test channels, each of which includes a half-bridge circuit, a gate drive circuit, and a clamping circuit for two GaN devices. Further, the half-bridge structure circuit and the sampling resistor Isen can be called a hard switch test circuit.

[0081] based on Figure 8 In the circuit shown, when an aging test is performed on any power device under test, if the HTRB aging test is performed, the relay connected to the gate of the power device under test is in an open state, and the relay connected to the drain of the power device under test and Relay_HTRB are in a closed state. If the HTGB aging test is performed, the relay between the power device under test and HTGB is in a closed state, and other relays in the circuit are in an open state. In the case of on-resistance measurement, the relay between the power device under test and HTGB and HTRB is in an open state, and other relays in the circuit are in a closed state.

[0082] Accordingly, based on the above-mentioned multi-channel test circuit, aging tests can be performed on multiple power devices to be tested at the same time. After the aging test is completed, dynamic on-resistance measurement is performed on any one of the multiple power devices to be tested each time to determine the on-resistance of the power device to be tested.

[0083] Furthermore, in the multi-channel test circuit in any of the above embodiments, the multi-channel test board is also provided with an acquisition port and a control port, and the acquisition port includes a voltage and current acquisition port during the aging process. The control port includes a control signal port of a signal generator, a programmable voltage source port and other control ports, a control port of a switching module, a power control port of an aging module and a power control port of a multi-channel test board, and other control ports include a temperature control port associated with aging. The control of the multi-channel test circuit can be achieved by existing control methods, which will not be elaborated here.

[0084] It can be understood that for the multi-channel test circuit in any of the above-mentioned embodiments, for the convenience of description, a group of aging modules, switching modules, driving modules and resistance measurement modules in the multi-channel test circuit are described. Then in actual applications, the aging test can be performed on the power devices to be tested connected to n parallel switching modules at the same time, and after the aging test is completed, the dynamic on-resistance measurement is performed on each power device to be tested after aging in turn until the aging end condition is met. The aging end condition can be, but is not limited to, the power device to be tested reaches the device failure threshold or the aging times reach a preset number.

[0085] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.

[0086] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0087] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A multi-channel test circuit, characterized in that: The multi-channel test circuit comprises: an aging module, n parallel switching modules, n driving modules, and a resistance measurement module, wherein the output interface of the switching module is used to connect the power device to be tested, and the input interface is respectively connected to the aging module, the driving module, and the resistance measurement module, and any one of the driving module and the resistance measurement module does not turn on the power device to be tested at the same time as the aging module, wherein: The aging module is used to perform an aging test on the power device to be tested; The resistance measurement module is used to perform dynamic resistance conduction measurement on the aged power device to be tested; The switching module is used to switch the on / off state of the power device to be tested and the aging module, the driving module and the resistance measuring module; The driving module is used to control the conduction state of the switching module and the aging module or the resistance measurement module in response to an external control signal, so as to perform mode switching on the power device to be tested.

2. The multi-channel test circuit according to claim 1, characterized in that: The output interface includes a first output interface, a second output interface and a third output interface, the first output interface is connected to the first end of the power device under test, the second output interface is connected to the second end of the power device under test, and the third output interface is connected to the third end of the power device under test.

3. The multi-channel test circuit according to claim 2, characterized in that: The switching module includes a first switch device, a second switch device and a third switch device, one end of the first switch device is electrically connected to the first output interface, and the other end is electrically connected to the resistance measurement module, one end of the second switch device is electrically connected to the second output interface, and the other end is electrically connected to the driving module, one end of the third switch device is connected to the aging module, and the other end is connected to the connection line between the second output interface and the second switch device, or the other end of the third switch device is connected to the other end of the first switch device and the connection line of the resistance measurement module.

4. The multi-channel test circuit according to claim 3, characterized in that: There are two third switch devices, one end of which is connected to the aging module, and the other end is connected to the line connecting the second output interface and the second switch device, and the other end of which is connected to the aging module, and the other end is connected to the other end of the first switch device and the line connecting the resistance measurement module.

5. The multi-channel test circuit according to any one of claims 1 to 4, characterized in that: The multi-channel test circuit includes a power supply module, the resistance measurement module includes a clamp circuit and a load circuit, one end of the clamp circuit is connected to the load circuit, and the other end is grounded, the other end of the load circuit is connected to the power supply module, and the other end of the power supply module is grounded, wherein: The clamping circuit is used to ensure that the variation of the measured value of the power device under test during the on and off process is within a preset range; The load circuit is used to prevent the capacitor in the power module from being broken down due to a sudden current when the power device to be tested is subjected to dynamic resistance conduction measurement.

6. The multi-channel test circuit according to claim 5, characterized in that: The clamping circuit includes a first diode, a first resistor, a first capacitor and a low-voltage DC power supply, the anode of the first diode is connected to one end of the first resistor, the cathode of the first diode is connected to the power device to be tested, the capacitor is connected in parallel with the low-voltage DC power supply, one end of the parallel connection is grounded, and the other end is electrically connected to the other end of the first resistor.

7. The multi-channel test circuit according to claim 6, characterized in that: The load circuit includes a power device and an inductor. The power device and the inductor are connected in parallel, one end of the parallel connection is electrically connected to the switching module, and the other end of the parallel connection is connected to the power supply module.

8. The multi-channel test circuit according to claim 7, characterized in that: The multi-channel test circuit also includes a sampling resistor, a first voltage acquisition device and a second voltage acquisition device. The sampling resistor is arranged between the third end of the power device to be tested and the ground line, the first voltage acquisition device is arranged between the second resistor and the connection line of the third end of the power device to be tested, and the second voltage acquisition device is arranged between the first diode and the first resistor. The first voltage acquisition device is used to collect the voltage of the third end of the power device to be tested, and the second voltage acquisition device is used to collect the clamping point voltage value at both ends of the first diode.

9. The multi-channel test circuit according to any one of claims 1 to 4, characterized in that: The external control signal includes a first external control signal and a second external control signal, and the driving module is used to drive the switching module to turn on the aging module in response to the first external control signal to perform an aging test on the power device to be tested; When the aging test is completed, in response to the second external control signal, the switching module is driven to turn on the resistance measurement module to perform dynamic resistance on-state measurement on the power device to be tested.

10. The multi-channel test circuit according to claim 9, characterized in that: The aging module includes a first aging module and a second aging module, and the switching module includes a first switching module connected to the first aging module and a second switching module connected to the second aging module; The driving module is further used to respond to a first external control signal and, according to a signal type of the first external control signal, drive a target switching module corresponding to the signal type to close, turn on the aging module, and perform an aging test on the power device to be tested; the target switching module is the first switching module or the second switching module; When the aging test is completed, in response to a second external control signal, the target switching module is driven to be disconnected, the resistance measurement module is turned on, and a dynamic resistance on-state measurement is performed on the power device to be tested.

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