Ceramic base

Abstract

The present invention relates to a ceramic susceptor, and the ceramic susceptor according to the present invention may comprise: an insulating plate on which an electrode is disposed; a base body joined to the insulating plate and having a purge flow path; a hollow shaft that is joined to the base and has one or more first through-holes in a side wall thereof that communicate with the purge flow path; and a power supply rod connected with the electrode and extending to pass through an inner space of the shaft, the purge flow path may include: a correction hole for correcting a path; a correction flow path extending from the one or more first through-holes to the correction hole; and one or more flow paths extending from the correction hole to an edge.

Description

Technical Field

[0001] The present invention relates to a ceramic susceptor, and more particularly to a ceramic susceptor in which air pumping for purging is uniformly formed on the upper surface of the susceptor as a whole. Background Art

[0002] In general, semiconductor devices or display devices are manufactured by semiconductor engineering that patterns multiple thin film layers including dielectric layers and metal layers on glass substrates, flexible substrates or semiconductor wafer substrates. These thin film layers are sequentially deposited on substrates by chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes. The CVD process includes low pressure chemical vapor deposition (LPCVD) process, plasma enhanced chemical vapor deposition (PECVD) process, metal organic chemical vapor deposition (MOCVD) process, etc. In such CVD devices and PVD devices, a ceramic susceptor is provided, which is used to support glass substrates, flexible substrates, semiconductor wafer substrates, etc. and process semiconductor processes. The ceramic susceptor is provided in the CVD device and the PVD device, and may be provided with a suction cup electrode for supporting the substrate and a heating wire for heating the substrate in a heat treatment process, etc. In addition, the ceramic base may also form plasma in an etching process of a thin film layer formed on a substrate by providing a high frequency (RF) electrode instead of a heating wire, or by additionally providing a high frequency (RF) electrode.

[0003] However, since the conventional common ceramic pedestal has a structure in which the purge gas cannot be uniformly supplied to the entire upper surface of the pedestal when the purge gas is supplied through the configuration of the purge hole or groove on the upper surface on which the substrate is placed, there is a need to improve this point. That is, the purge structure of the conventional common ceramic pedestal has a structure in which the purge may not only be performed locally in a specific direction, or may be performed locally only in a specific direction. In this case, during the deposition process for the substrate on the ceramic pedestal disposed in the chamber of the device, the thin film may be deposited unevenly, which may lead to problems such as a reduction in yield or poor deposition performance.

[0004] Therefore, there is a need for a ceramic susceptor capable of uniformly performing purging in all directions where a substrate is placed. Summary of the invention

[0005] Problem that the invention aims to solve

[0006] Therefore, the present invention is proposed to solve the above-mentioned problems. The object of the present invention is to provide a base or ceramic base, which sets the correction hole for purging of the base body at the center of the base body, and makes the length of all fluid paths to the outermost edge the same through radially symmetrical branch flow paths, so that the air pumping for purging is uniformly formed on the upper surface of the base as a whole.

[0007] In addition, another object of the present invention is to provide a base or a ceramic base, wherein two flow paths formed on the shaft respectively form fluid communication with the purging correction hole and the chuck hole for vacuum suction of the base, thereby being able to compositely realize a purging function based on the purging correction hole and a vacuum suction cup function based on the suction cup hole.

[0008] Means used to solve problems

[0009] First, let's summarize the features of the present invention. According to one aspect of the present invention for achieving the above-mentioned purpose, a ceramic base may include: an insulating plate, on which an electrode is arranged; a substrate, which is joined to the insulating plate and provided with a purge flow path; a hollow shaft, which is joined to the substrate and includes one or more first through holes, wherein the one or more first through holes are formed on the side wall of the hollow shaft and are connected to the purge flow path; and a power supply rod, which is connected to the electrode and extends in a manner of passing through the internal space of the hollow shaft, wherein the purge flow path may include: a correction hole for correcting a fluid path; a correction flow path extending from the one or more first through holes to the correction hole; and one or more flow paths extending from the correction hole to the edge of the substrate.

[0010] The one or more flow paths may include a plurality of branch flow paths, and the plurality of branch flow paths radially extend from the correction hole to the edge of the base.

[0011] The plurality of branch flow paths are preferably arranged at positions symmetrical about the correction hole.

[0012] The correction hole is preferably located in the center of the basic body.

[0013] The one or more first through holes include two or more through holes formed in the side wall of the hollow shaft, and the correction flow paths extending from the two or more through holes meet at the correction holes.

[0014] The purge function can be performed by maintaining the one or more first through holes at a positive pressure higher than the atmospheric pressure.

[0015] The hollow shaft may further include a first through-flow path formed between the upper surface of the insulating plate and the lower surface of the base, and the hollow shaft may further include one or more second through-holes formed in the side wall and communicating with the first through-flow path.

[0016] By maintaining the second through hole at a negative pressure lower than the atmospheric pressure, the substrate disposed on the insulating plate can be sucked.

[0017] The electrode may be one or more of an electrode having a plasma generating function, an electrode having an electrostatic chuck function, or an electrode for a heating element.

[0018] The substrate may include: a first layer including the correction flow path extending from the one or more first through holes to the correction hole; and a second layer including the correction hole and the one or more flow paths extending from the correction hole to an edge.

[0019] The hollow shaft may further include a first through-flow path extending from the upper surface of the insulating plate through the first layer and the second layer. The hollow shaft may further include one or more second through-holes formed on the side wall and connected to the first through-flow path.

[0020] The substrate may include: a first layer including the correction flow path extending from the one or more first through holes to the correction hole; a second layer including the correction hole; and a third layer including the one or more flow paths extending from the correction hole to the edge.

[0021] The shaft may further include a first through-flow path extending from the upper surface of the insulating plate through the first layer, the second layer and the third layer, and the shaft may further include one or more second through holes formed on the side wall and connected to the first through-flow path.

[0022] The substrate may include: a first layer, including an entry hole forming a part of the corrective flow path, the entry hole being connected to the one or more first through holes; a second layer, including the corrective hole and a connecting flow path forming the remaining part of the corrective flow path, the connecting flow path extending from the entry hole to the corrective hole; and a third layer, including the one or more flow paths extending from the corrective hole to the edge of the substrate.

[0023] The shaft may further include a first through-flow path extending from the upper surface of the insulating plate through the first layer, the second layer and the third layer, and the shaft may further include one or more second through holes formed on the side wall and connected to the first through-flow path.

[0024] Effects of the Invention

[0025] According to the ceramic susceptor of the present invention, the purge correction hole is set at the center of the base, and the lengths of all fluid paths to the outermost edges are formed to be the same through radial symmetrical branch flow paths, so that air pumping for purge can be uniformly formed on the entire upper surface of the susceptor. As described above, purge is uniformly achieved in all directions for placing the substrate, so that a thin film can be uniformly deposited during the deposition process for the substrate on the ceramic susceptor, thereby increasing the yield rate and improving the deposition performance.

[0026] In addition, according to the ceramic base of the present invention, a composite function can be realized, that is, the flow path formed on the axis and the purging correction hole on the base form a fluid unblocking, thereby performing a uniform purging function on the entire upper surface of the base, and other flow paths formed on the axis and the chuck hole for vacuum suction of the base form a fluid unblocking, thereby being able to additionally realize a vacuum chuck function. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] To help understanding of the present invention, the accompanying drawings, which are included as a part of the detailed description, provide embodiments of the present invention and explain the technical concept of the present invention together with the detailed description.

[0028] Figure 1A is a schematic cross-sectional view of a ceramic susceptor according to a first embodiment of the present invention.

[0029] Figure 1B is a schematic cross-sectional view of a ceramic susceptor according to a second embodiment of the present invention.

[0030] Figure 1C is a schematic cross-sectional view of a ceramic susceptor according to a third embodiment of the present invention.

[0031] Figure 2A It shows the composition Figure 1A Figure 1 is an example of a ceramic base having multiple layers of a base body. FIG. 2B to FIG. 2E are top and bottom views showing each of the layers.

[0032] Figure 3A It shows the composition Figure 1B Figure 1 is an example of a ceramic base having multiple layers of a base body. FIG. 3B to FIG. 3E are top and bottom views showing each of the layers.

[0033] Figure 4A It shows the composition Figure 1A Figures of other embodiments of multiple layers of a base of a ceramic base, FIG. 4B to FIG. 4G are top and bottom views showing each of the layers.

[0034] Figure 5A It shows the composition Figure 1B Figures of other embodiments of multiple layers of a base of a ceramic base, Figures 5B to 5G are top and bottom views showing each of the layers.

[0035] Fig. 6A It shows the composition Figure 1A FIG. 1 is a diagram of yet another embodiment of a plurality of layers of a base of a ceramic base, FIG. 6B to FIG. 6G are top and bottom views showing each of the layers.

[0036] Fig. 7A It shows the composition Figure 1B FIG. 1 is a diagram of yet another embodiment of a plurality of layers of a base of a ceramic base, FIG. 7B to FIG. 7G are top and bottom views showing each of the layers.

[0037] Description of Reference Numerals

[0038] 11: substrate; 91: suction cup hole; 110: insulating plate; 120: base; 130: axis; 131, 132: power supply rods; 135: first through hole; 135-1: entry hole; 136: second through hole; 136-1: first through flow path; 125: purge flow path; 121: correction flow path; 122: correction hole; 123: multiple branch flow paths. DETAILED DESCRIPTION

[0039] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. At this time, the same components in each of the accompanying drawings are represented by the same figure numerals as much as possible. In addition, the description of known functions and / or structures will be omitted. The content disclosed below will mainly describe the parts required for understanding the operation of various embodiments, and omit the description of the elements that may make the main points of the description unclear. In addition, some of the components in the accompanying drawings may be enlarged, omitted or schematically shown. The size of each component cannot fully reflect the actual size, and therefore, the content recorded here is not limited by the relative size or spacing of the components shown in each of the accompanying drawings.

[0040] When describing the embodiments of the present invention, if it is judged that the specific description of the known technology related to the present invention unnecessarily obscures the main idea of ​​the present invention, its detailed description will be omitted. In addition, the terms described below are terms defined in consideration of the functions of the present invention, and may vary according to the intentions or precedents of the user or operator. Therefore, their definition should be based on the content of the entire specification. The terms used in this specification are used only to illustrate the embodiments of the present invention and are not intended to be limiting. Unless otherwise specified, singular expressions shall include plural expressions. Expressions such as "including" or "having" in this specification are used to refer to any feature, number, step, action, component or combination thereof, and should not be understood as excluding the existence or additional possibility of one or more other features, numbers, steps, actions, components or combinations thereof.

[0041] In addition, although the terms "first", "second" and the like may be used to describe various components, the components are not limited to the terms. The terms are only used to distinguish one component from another component.

[0042] Figure 1A FIG. 1 is a schematic cross-sectional view of a ceramic susceptor 100 according to a first embodiment of the present invention.

[0043] Figure 1B FIG. 2 is a schematic cross-sectional view of a ceramic susceptor 200 according to a second embodiment of the present invention.

[0044] Reference Figure 1A and Figure 1B The ceramic base 200 of the second embodiment is substantially the same as the ceramic base 100 according to the first embodiment, but is further provided with a first through-flow path 136-1 formed through the upper surface 119 of the insulating plate 110 and the lower surface 129 of the base 120. The first through-flow path 136-1 forms a chuck hole 91 for vacuum suction on the upper surface of the insulating plate 110, and the substrate 11 placed on the insulating plate 110 can be sucked and supported through the chuck hole 91.

[0045] Figure 1C FIG. 1 is a schematic cross-sectional view of a ceramic susceptor 300 according to a third embodiment of the present invention.

[0046] Reference Figure 1C The ceramic base 300 of the third embodiment of the present invention is a modification of the ceramic base 200 of the second embodiment in which the electrode 112 is omitted, and the remaining structure is the same as the ceramic base 200 of the second embodiment.

[0047] That is, the base (ceramic base) 100, 200, 300 of the present invention includes an insulating plate 110 and a base 120 joined by an adhesive such as ceramic glue, and includes a hollow shaft 130 joined by an adhesive such as ceramic glue at the lower part of the base 120 to support the joined bodies 110 and 120. Depending on the situation, a connecting bracket 140 may be provided at the lower part of the shaft 130 to facilitate connection to a system such as a chamber of a semiconductor device.

[0048] Each power supply rod 131, 132, ..., etc. is accommodated in the internal space formed by the shaft 130, and can be connected to the electrode 112 and / or the heating element 114 embedded in the insulating plate 110 to supply the required power. Each power supply rod 131, 132, etc. extends from the internal space of the shaft 130 and passes through the connection bracket 140 having an outer side in a closed form (for example, a rigid body or a member having a hollow space) and then extends to the outside.

[0049] The ceramic pedestals 100, 200, 300 of the present invention may have a heating function for heating the corresponding processing target substrate 11 to a predetermined temperature in a semiconductor process using a heating element 114. In addition, the ceramic pedestals 100, 200 of the present invention may have an electrode 112, which may be used as a chuck electrode for performing an electrostatic chuck function for supporting the substrate 11 placed on the insulating plate 110, or may be used as a plasma electrode for performing a plasma generation function for a process such as dry etching in a plasma enhanced chemical vapor deposition or reactive ion etching (RIE) equipment. This may be a function different from the vacuum chuck function for supporting the substrate 11 by vacuum suction of the chuck hole 91.

[0050] For this purpose, the insulating plate 110 may be configured such that the heating element 114 is arranged (buried) between ceramic materials, and depending on the situation, the electrode 112 may be arranged (buried) at a predetermined interval from the heating element 114. In addition, depending on the situation, the suction cup electrode (plural suction cup electrodes) may be arranged (buried) at a predetermined interval on the upper side or the lower side of the heating element 114.

[0051] As described above, the insulating plate 110 can be configured to be able to perform different semiconductor processes while stably supporting the processing target substrate by utilizing the heating of the heating body 114 and / or utilizing the electrostatic chuck function or plasma generation function of the electrode 112. The insulating plate 110 can be made of a plate-like structure having a predetermined shape. For example, the insulating plate 110 can be made of a circular plate-like structure, but is not limited to this. Among them, the ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the powder of the ceramic material may be molded and sintered to form the insulating plate 110, and for this purpose, each ceramic powder may selectively include yttrium oxide powder in an amount of 0.1 to 10% (preferably about 1 to 5%).

[0052] The heating element (or heating electrode) 114 can be formed into a plate-like coil shape or a flat plate shape formed by a heating wire (or a resistance wire). In addition, the heating element 114 can be formed into a multilayer structure for precise temperature control. The heating element 114 is connected to a power supply through power supply rods 131 and 132, thereby forming a power supply, and in order to perform a heating or deposition process and an etching process of a substrate during a semiconductor process, the function of heating the processing target substrate 11 on the insulating plate 110 to a predetermined temperature can be performed. The power supply rods 131 and 132 pass through the internal space of the shaft 130 and penetrate the predetermined partition plate of the connecting bracket 140, and then penetrate the connecting bracket 140, thereby extending outward.

[0053] The electrode 112 may be made of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN) or alloys thereof, preferably molybdenum (Mo). The electrode 112 may be connected to a power supply terminal (e.g., ground) by other power supply rods (not shown) other than the power supply rods 131 and 132 for the heating element 114. The power supply rod (not shown) for the electrode 112 also passes through the internal space of the shaft 130 and penetrates the predetermined partition plate of the connecting bracket 140, and then passes through the connecting bracket 140, thereby extending outward.

[0054] The shaft 130 is formed into a hollow type having a penetrated internal space, and is combined with the lower surface of the joint body of the insulating plate 110 and the base 120. The shaft 130 can be made of a ceramic material to be combined with the insulating plate 110. Among them, the ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the powder of the ceramic material can be molded and sintered to form the shaft 130, and for this purpose, each ceramic powder can selectively include yttrium oxide powder in an amount of 0.1 to 10% (preferably about 1 to 5%).

[0055] The connecting bracket 140 may be made of a metal material such as aluminum (Al), or may be made of a ceramic material as described above. That is, the ceramic material may be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the powder of the ceramic material may be molded and sintered to form the shaft 130, and for this purpose, each ceramic powder may selectively include yttrium oxide powder in an amount of 0.1 to 10% (preferably about 1 to 5%).

[0056] Re-reference Figures 1A to 1C, the substrate 120 joined to the lower part of the insulating plate 110 has a purge flow path 125. The upper end of the side wall of the hollow shaft 130 is joined to the substrate 120, and the shaft 130 has one or more first through holes 135 formed on its side wall and connected to the purge flow path 125. The substrate 120 can be made of a ceramic material. Among them, the ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the powder of the ceramic material can be molded and sintered to form the shaft 130, and for this purpose, each ceramic powder can selectively include yttrium oxide powder in an amount of 0.1 to 10% (preferably about 1 to 5%).

[0057] The purge flow path 125 includes a correction flow path 121, a correction hole 122, and a plurality of branch flow paths 123. The correction flow path 121 is a flow path portion extending from the first through hole 135 of the shaft 130 to the correction hole 122 for correcting the path. The correction hole 122 may be designed to have a predetermined diameter greater than the diameter of the correction flow path 121, and may be vertically formed at an appropriate height on the upper surface of the insulating plate 110. The branch flow paths 123 are flow paths extending radially from the correction hole 122 to the edge of the base 120 (see Figure 2E , Figure 3E , Figure 4F , Fig. 5F , Fig. 6F , Figure 7F ).

[0058] As described in more detail below, the correction hole 122 is preferably located at the center of the base 120, but it can also be arranged at other positions according to the situation. In addition, a plurality of branch flow paths 123 are configured to be connected / communicated with the correction hole 122, and are preferably arranged at positions symmetrically formed with the correction hole 122 as the center. Although two of the more than one first through holes 135 formed on the side wall of the shaft 130 are shown in the drawings, one may be formed on the side wall of the shaft 130, or an appropriate number of more than three may be formed on the side wall of the shaft 130. Each correction flow path 121 extending from the plurality of through holes 135 as described above can be formed to meet at the correction hole 122 and extend radially together with the branch flow path 123.

[0059] The purge function can be performed by maintaining the first through hole 135 as described above at a positive pressure higher than the atmospheric pressure. For example, the purge function can be performed by maintaining a pressure higher than the atmospheric pressure through positive pressure air pumping (suction) based on the first through hole 135 of the shaft 130. At this time, a predetermined air pump (not shown) can perform pumping of injected air at a predetermined pressure higher than the atmospheric pressure through the first through hole 135. For example, the purge for blowing air containing a specified gas (for example, inert gases such as nitrogen, He, Ar, etc.) into the chamber of the above-mentioned CVD device and PVD device can be performed by positive pressure air pumping through the first through hole 135.

[0060] In addition to the common features of the ceramic bases 100, 200, and 300 as described above, Figure 1B In the case of the second embodiment, the ceramic base 200 further includes a first through-flow path 136-1, which is formed to penetrate between the upper surface 119 of the insulating plate 110 and the lower surface 129 of the base 120. Correspondingly, the shaft 130 may further include one or more second through holes 136 formed on its side wall and connected to the first through-flow path 136-1.

[0061] The second through hole 136 as described above can perform a vacuum suction cup function for sucking the substrate 11 arranged on the upper part of the insulating plate 110 by maintaining a negative pressure lower than the atmospheric pressure. That is, the first through flow path 136-1 forms a chuck hole 91 for vacuum suction on the upper surface of the insulating plate 110, and the substrate 11 placed on the insulating plate 110 can be sucked and supported through the chuck hole 91.

[0062] For example, one or more suction cup holes 91 exposed on the upper surface of the insulating plate 110 may meet a groove formed on the upper surface of the insulating plate 110. The groove formed on the upper surface of the insulating plate 110 may be implemented in various ways so as to be able to absorb and support the substrate 11 by relying on the negative pressure from the one or more suction cup holes 91. For example, the grooves formed on the upper surface of the insulating plate 110 may be designed to be connected as a whole so as to be able to stably absorb the substrate 11 by relying on the negative pressure from the suction cup holes 91.

[0063] As described above, the ceramic base 200 of the present invention is constructed to be able to achieve chucking and dechucking of the substrate 11 by pumping negative pressure air through the second through hole 136. At this time, while stably supporting the processing target substrate 11 on the insulating plate 110, various semiconductor processes such as heating based on the heating element 114 and / or plasma deposition or dry etching processes based on the electrode 112 can be performed.

[0064] According to the ceramic base 100, 200, 300 of the embodiments of the present invention, the correction hole 122 for purge is set at the center of the base 120, and the lengths of all fluid paths to the outermost (outermost) edge of the insulating plate 110 are formed to be the same through radially symmetrical branch flow paths 123, so that air pumping for purge can be uniformly formed on the entire upper surface of the base.

[0065] In addition, Figure 1B and Figure 1C In this case, the ceramic base 200 of the second embodiment can achieve a composite function, that is, a flow path formed on the shaft 130 and the purging correction hole 122 on the base form a fluid connection to perform an overall uniform purging function on the upper surface of the base, and other flow paths 136 formed on the shaft 130 and a chuck hole for vacuum suction on the base form a fluid connection to additionally perform a vacuum chuck function.

[0066] Below, by referring to FIG. 2A to FIG. 2E , FIG. 4A to FIG. 4G as well as FIG. 6A to FIG. 6G (It will Figure 1A The ceramic base 100 of the first embodiment of the present invention is described in more detail with reference to the accompanying drawings in which the base is turned upside down and enlarged. FIG. 3A to FIG. 3E , FIG. 5A to FIG. 5G as well as FIG. 7A to FIG. 7G (It will Figure 1B The ceramic base 200 and the ceramic base 300 of the second embodiment and the third embodiment of the present invention are described in more detail with reference to the accompanying drawings in which the base is turned upside down and enlarged. The ceramic base 300 according to the third embodiment is a modification of the ceramic base 200 according to the second embodiment in which the electrode 112 is omitted. Therefore, anyone skilled in the art can easily understand the structure of the ceramic base 200 according to the second embodiment by referring to the structure of the ceramic base 200.

[0067] Figure 2A It shows the composition Figure 1A FIG. 1 is a diagram of an embodiment of a plurality of layers 311 , 312 of a base body 120 of a ceramic base 100 , Figure 2B and Figure 2C 3 are respectively a top view and a bottom view of the first layer 311 , Figure 2D and Figure 2E 3 and 4 are top and bottom views respectively showing the second layer 312 .

[0068] Reference Figure 2AThe base 120 of the ceramic base 100 according to the present invention may include a first layer 311 and a second layer 312. The first layer 311 and the second layer 312 are separately manufactured, so that they can be joined using ceramic glue, etc., and can be laminated by molding and sintering each layer when filling material powder or laminating multiple sheets.

[0069] Reference Figure 2B and Figure 2C The first layer 311 may include a correction flow path 121 extending from one or more first through holes 135 of the shaft 130 to the correction hole 122 .

[0070] Reference Figure 2D and Figure 2E The second layer 312 may include the corrective holes 122 and may include a plurality of branch flow paths 123 extending radially from the plurality of corrective holes 122 to the edge of the base 120 / insulating plate 110 .

[0071] Figure 3A It shows the composition Figure 1B FIG. 1 is a diagram of an embodiment of a plurality of layers 411 , 412 of a base 120 of a ceramic base 200 , Figure 3B and Figure 3C 4 are a top view and a bottom view showing the first layer 411, respectively. Figure 3D and Figure 3E 4 and 5 are top and bottom views showing the second layer 412, respectively.

[0072] Reference Figure 3A The base 120 of the ceramic base 200 according to the present invention may include a first layer 411 and a second layer 412. The first layer 411 and the second layer 412 are separately manufactured, so that they can be joined using ceramic glue, etc., and can be laminated using molding and sintering of each layer when filling material powder or laminating multiple sheets.

[0073] Figure 3A The structure of the ceramic base 200 of the present invention is Figure 2A The structure of the shaft 130 is similar to that of the shaft 130, but further includes a first through-flow path 136-1 that penetrates the first layer 411 and the second layer 412 from the upper surface of the insulating plate 110. The first through-flow paths 136-1 are arranged at different positions from each other in a manner that they do not meet and communicate with the correction flow path 121 or the branch flow path 123 in their path direction. At this time, the shaft 130 includes one or more second through holes 136 formed on its side wall and communicating with the first through-flow path 136-1. The first through hole 135 and the second through hole 136 of the shaft 130 are not connected to each other.

[0074] Reference Figure 3B and Figure 3CThe first layer 411 may include a correction flow path 121 extending from one or more first through holes 135 of the shaft 130 to the correction hole 122 .

[0075] Reference Figure 3D and Figure 3E The second layer 412 may include the corrective holes 122 and may include a plurality of branch flow paths 123 extending radially from the plurality of corrective holes 122 to the edge of the base 120 / insulating plate 110 .

[0076] Figure 4A It shows the composition Figure 1A FIG. 1 is a diagram of an embodiment of a plurality of layers 511 , 512 , 513 of a base 120 of a ceramic base 100 , Figure 4B and Figure 4C 5 are a top view and a bottom view showing the first layer 511, respectively. Figure 4D and Figure 4E 3 are respectively a top view and a bottom view showing the second layer 512, Figure 4F and Figure 4G The top view and bottom view respectively show the third layer 513 .

[0077] Reference Figure 4A The base 120 of the ceramic base 100 according to the present invention may include a first layer 511, a second layer 512, and a third layer 513. The first layer 511, the second layer 512, and the third layer 513 are separately manufactured, so that they can be joined using ceramic glue, etc., and can be laminated by molding and sintering each layer when filling material powder or laminating multiple sheets.

[0078] Reference Figure 4B and Figure 4C The first layer 511 includes a correction flow path 121 , which extends from one or more first through holes 135 to the correction hole 122 .

[0079] Reference Figure 4D and Figure 4E The second layer 512 is a layer in which the correction hole 122 is formed.

[0080] Reference Figure 4F and Figure 4G The third layer 513 includes a plurality of branch flow paths 123 , and the plurality of branch flow paths 123 extend radially from the correction hole 122 to the edge of the substrate 120 / insulation plate 110 .

[0081] Figure 5A It shows the composition Figure 1B FIG. 1 is a diagram of an embodiment of a plurality of layers 611 , 612 , 613 of a base 120 of a ceramic base 200 , Figure 5B and Figure 5C6 and 7 are respectively a top view and a bottom view showing the first layer 611. Figure 5D and Figure 5E 6 and 7 are respectively a top view and a bottom view showing the second layer 612. Fig. 5F and Figure 5G The top view and bottom view respectively show the third layer 613 .

[0082] Reference Figure 5A The base 120 of the ceramic base 200 according to the present invention may include a first layer 611, a second layer 612, and a third layer 613. The first layer 611, the second layer 612, and the third layer 613 are separately manufactured, so that they can be joined using ceramic glue, etc., and can be laminated using molding and sintering of each layer when filling material powder or laminating multiple sheets.

[0083] Figure 5A The structure of the ceramic base 200 of the present invention is Figure 4A The structure of the shaft 130 is similar to that of the shaft 130, but further includes a first through-flow path 136-1 that penetrates the first layer 611, the second layer 612, and the third layer 613 from the upper surface of the insulating plate 110. The first through-flow paths 136-1 are arranged at different positions from each other in a manner that they do not meet and communicate with the correction flow path 121 or the branch flow path 123 in their path direction. At this time, the shaft 130 also includes one or more second through holes 136 formed on its side wall and communicating with the first through-flow path 136-1. The first through hole 135 and the second through hole 136 of the shaft 130 are not connected to each other.

[0084] Reference Figure 5B and Figure 5C The first layer 611 includes a correction flow path 121 , which extends from one or more first through holes 135 to the correction hole 122 .

[0085] Reference Figure 5D and Figure 5E The second layer 612 is a layer in which the correction hole 122 is formed.

[0086] Reference Fig. 5F and Figure 5G The third layer 513 includes a plurality of branch flow paths 123 , and the plurality of branch flow paths 123 extend radially from the correction hole 122 to the edge of the substrate 120 / insulation plate 110 .

[0087] Fig. 6A It shows the composition Figure 1A FIG. 1 is a diagram of an embodiment of a plurality of layers 711 , 712 , 713 of a base 120 of a ceramic base 100 , Figure 6B and Figure 6C 7 are a top view and a bottom view showing the first layer 711, respectively. Fig.6D and Fig. 6E7 are a top view and a bottom view showing the second layer 712, respectively. Fig. 6F and Figure 6G The top view and bottom view respectively show the third layer 713 .

[0088] Reference Fig. 6A , the base 120 of the ceramic base 100 according to the present invention may include a first layer 711, a second layer 712, and a third layer 713. The first layer 711, the second layer 712, and the third layer 713 are separately manufactured, so that they can be joined using ceramic glue or the like, and can be laminated by molding and sintering each layer when filling material powder or laminating a plurality of sheets.

[0089] Reference Figure 6B and Figure 6C The first layer 711 includes an inlet hole 135 - 1 that forms a part of the correction flow path 121 , and the inlet hole 135 - 1 is connected to one or more first through holes 135 .

[0090] Reference Fig.6D and Fig. 6E The second layer 712 includes a connecting flow path formed as a remaining portion of the corrective flow path 121, the connecting flow path extending from the inlet hole 135-1 to the corrective hole 122, and the second layer 712 also includes the corrective hole 122.

[0091] Reference Fig. 6F and Figure 6G The third layer 713 includes a plurality of branch flow paths 123 , and the plurality of branch flow paths 123 extend radially from the correction hole 122 to the edge of the substrate 120 / insulation plate 110 .

[0092] Fig. 7A It shows the composition Figure 1B FIG. 1 is a diagram of an embodiment of a plurality of layers 811 , 812 , 813 of a base 120 of a ceramic base 200 , Figure 7B and Figure 7C 8 are a top view and a bottom view showing the first layer 811, respectively. Fig.7D and Fig. 7E 8 are a top view and a bottom view showing the second layer 812, respectively. Figure 7F and Figure 7G The top view and bottom view respectively show the third layer 813 .

[0093] Reference Fig. 7A The base 120 of the ceramic base 200 according to the present invention may include a first layer 811, a second layer 812, and a third layer 813. The first layer 811, the second layer 812, and the third layer 813 are separately manufactured, so that they can be joined using ceramic glue, etc., and can be laminated by molding and sintering each layer when filling material powder or laminating multiple sheets.

[0094] Fig. 7A The structure of the ceramic base 200 of the present invention is Fig. 6A The structure of the shaft 130 is similar to that of the shaft 130, but further includes a first through-flow path 136-1 that penetrates the first layer 811, the second layer 812, and the third layer 813 from the upper surface of the insulating plate 110. The first through-flow paths 136-1 are arranged at different positions from each other in a manner that they do not meet and communicate with the correction flow path 121 or the branch flow path 123 in their path direction. At this time, the shaft 130 also includes one or more second through holes 136 formed on its side wall that communicate with the first through-flow path 136-1. The first through hole 135 and the second through hole 136 of the shaft 130 are not connected to each other.

[0095] Reference Figure 7B and Figure 7C The first layer 811 includes an inlet hole 135 - 1 , which is a part of the correction flow path 121 and is connected to one or more first through holes 135 .

[0096] Reference Fig.7D and Fig. 7E The second layer 812 includes a connecting flow path, which is a remaining portion of the corrective flow path 121 and extends from the inlet hole 135 - 1 to the corrective hole 122 , and the second layer 812 also includes the corrective hole 122 .

[0097] Reference Figure 7F and Figure 7G The third layer 813 includes a plurality of branch flow paths 123 , and the plurality of branch flow paths 123 radially extend from the correction hole 122 to the edge of the substrate 120 / insulation plate 110 .

[0098] As described above, according to the ceramic base 100, 200, 300 of the embodiment of the present invention, the correction hole 122 for purge is set at the center of the base 120, and the lengths of all fluid paths to the outermost edge of the insulating plate 110 are formed to be the same through the radial symmetrical branch flow paths 123, so that air pumping for purge can be formed uniformly on the entire upper surface of the base. As described above, purging is uniformly achieved in all directions for placing the substrate, so that a thin film can be uniformly deposited during the deposition process for the substrate on the ceramic base, thereby increasing the yield rate and improving the deposition performance. In addition, in Figure 1BIn this case, the ceramic base 200 of the second embodiment can realize a composite function, that is, the flow path formed on the shaft 130 and the purging correction hole 122 on the base form a fluid unblocking, thereby performing a uniform purging function on the entire upper surface of the base, and the other flow paths 136 formed on the shaft 130 and the chuck hole for vacuum suction of the base form a fluid unblocking, thereby being able to additionally realize a vacuum chuck function.

[0099] As described above, in the present invention, specific matters such as specific constituent elements and limited embodiments and drawings have been described, but this is only provided to help understand the present invention as a whole, and the present invention is not limited to the embodiments, and ordinary technicians in the field to which the present invention belongs can make various modifications and changes within the scope of the essential features of the present invention. Therefore, the spirit of the present invention should not be limited to the described embodiments and determined, and all technical ideas that are equivalent to or equivalent to the claims, except for the attached claims, should be interpreted as included in the scope of the present invention.

Claims

1. A base, characterized in that: include: An insulating plate, provided with electrodes, a substrate, which is joined to the insulating plate and has a purge flow path, a hollow shaft, coupled to the base and comprising one or more first through holes, wherein the one or more first through holes are formed on a side wall of the hollow shaft and communicate with the purge flow path, and a power supply rod connected to the electrode and extending through the inner space of the hollow shaft; The purge flow path comprises: Correction hole, used to correct the path, a correction flow path extending from the one or more first through holes to the correction hole, and One or more flow paths extend from the correction hole to the edge of the substrate.

2. The base according to claim 1, characterized in that: The one or more flow paths include a plurality of branch flow paths, and the plurality of branch flow paths radially extend from the correction hole to the edge of the base.

3. The base according to claim 2, characterized in that: The plurality of branch flow paths are arranged at positions symmetrical about the correction hole.

4. The base according to claim 1, characterized in that: The correction hole is located at the center of the base.

5. The base according to claim 1, characterized in that: The one or more first through holes include two or more through holes formed on the side wall of the hollow shaft, The correction flow paths extending from the two or more through holes meet at the correction hole.

6. The base according to claim 1, characterized in that The purge function is performed by maintaining the one or more first through holes at a positive pressure higher than the atmospheric pressure.

7. The base according to claim 1, characterized in that The device further comprises a first through-flow path, wherein the first through-flow path passes through an upper surface of the insulating plate and a lower surface of the base body, The hollow shaft further includes one or more second through holes, which are formed in the side wall and communicate with the first through flow path.

8. The base according to claim 7, characterized in that The substrate disposed on the upper portion of the insulating plate is sucked by maintaining the one or more second through holes at a negative pressure lower than the atmospheric pressure.

9. The base according to claim 1, characterized in that: The electrode is one or more of an electrode having a plasma generating function, an electrode having an electrostatic chuck function, or an electrode for a heating element.

10. The base according to claim 1, characterized in that The substrate comprises: The first layer includes the correction flow path extending from the one or more first through holes to the correction hole; and The second layer includes the corrective hole and the one or more flow paths extending from the corrective hole to the edge of the substrate.

11. The base according to claim 10, characterized in that The insulating plate further includes a first through-flow path, the first through-flow path penetrating the first layer and the second layer from the upper surface of the insulating plate, The hollow shaft further includes one or more second through holes, which are formed in the side wall and communicate with the first through flow path.

12. The base according to claim 1, characterized in that The substrate comprises: A first layer including the correction flow path extending from the one or more first through holes to the correction hole; a second layer including the corrective aperture; and The third layer includes the one or more flow paths extending from the correction hole to the edge.

13. The base according to claim 12, characterized in that The insulating plate further includes a first through-flow path, the first through-flow path penetrating the first layer, the second layer, and the third layer from the upper surface of the insulating plate, The hollow shaft further includes one or more second through holes, which are formed in the side wall and communicate with the first through flow path.

14. The base according to claim 1, characterized in that The substrate comprises: a first layer including an inlet hole formed as a part of the correction flow path, the inlet hole being in communication with the one or more first through holes; a second layer including the corrective aperture and including a connecting flow path formed as a remaining portion of the corrective flow path, the connecting flow path extending from the entry aperture to the corrective aperture; and The third layer includes the one or more flow paths extending from the correction hole to the edge of the substrate.

15. The base according to claim 14, characterized in that The insulating plate further includes a first through-flow path, the first through-flow path penetrating the first layer, the second layer, and the third layer from the upper surface of the insulating plate, The hollow shaft further includes one or more second through holes, which are formed in the side wall and communicate with the first through flow path.

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