Electronic device packaging structure and electronic device packaging method

Abstract

The invention provides an electronic device packaging structure and an electronic device packaging method, the electronic device packaging structure comprises a packaging module and an electronic device, and the electronic device is packaged in an internal cavity of the packaging module; a base of the packaging module is made of diamond / copper composite materials, and an exhaust port communicated with an inner cavity and the outside is formed in the ceramic side wall of the packaging module. According to the electronic device packaging structure and the electronic device packaging method, the electronic device is packaged in the internal cavity of the packaging module through the packaging module, vacuumizing of the internal cavity is achieved through the exhaust port in the packaging module, the internal cavity of the packaging module enables the electronic device packaged in the internal cavity to be in the cavity environment instead of a plastic packaging material, and the packaging efficiency of the electronic device is improved. The problem of radio frequency performance loss caused by large dielectric constant of the plastic packaging material is solved, and the performance of the device is effectively improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor packaging technology, and in particular to an electronic device packaging structure and a manufacturing method thereof. Background Art

[0002] With the development of existing GaN (gallium nitride) related technologies, GaN is being applied in more and more fields. Among them, GaN HEMT (gallium nitride high electron mobility transistor) has a large market in the field of radio frequency communication.

[0003] At present, the common GaN HEMT RF devices on the market are mainly ceramic-packaged discrete devices, GaN MMIC (Monolithic Microwave Integrated Circuit) one-chip devices, and plastic-packaged GaN discrete devices + IPD integration. Among them, ceramic-packaged discrete devices require external matching, which is not conducive to improving the integration of the entire communication system; GaN MMIC one-chip devices can only be used in low-power application scenarios; plastic-packaged GaN discrete devices + IPD integration have the problem of filling plastic packaging materials, which will significantly reduce the RF performance of the device and cannot meet high-demand application scenarios. Summary of the invention

[0004] The main purpose of this application is to propose an electronic device packaging structure and an electronic device packaging method, which can reduce the loss of device radio frequency performance and improve device performance.

[0005] To achieve the above-mentioned purpose, the present application provides an electronic device packaging structure, including a packaging module and an electronic device, wherein the electronic device is packaged in an internal cavity of the packaging module; the base of the packaging module adopts a substrate of a diamond / copper composite material, and an exhaust port connecting the internal cavity with the outside is opened on the ceramic side wall of the packaging module.

[0006] In some embodiments, a first metal layer is formed on the surface of the substrate, and a second metal layer is formed on the surface of the first metal layer.

[0007] In some embodiments, the packaging module also includes a first cover plate, a second cover plate and an upper cover of ceramic, the first cover plate and the second cover plate are frame-shaped, the first cover plate is embedded and installed on the base, and the second cover plate is installed on the first cover plate; the outer circumferential dimension of the second cover plate is smaller than the outer circumferential dimension of the first cover plate, and the inner circumferential dimension of the second cover plate is larger than the inner circumferential dimension of the first cover plate; the upper cover is arranged on the first cover plate and the second cover plate, and the second cover plate is embedded in the groove formed by the side of the upper cover.

[0008] In some embodiments, the second cover plate is in the form of a rectangular frame, comprising four sequentially enclosed border strips, wherein two opposite border strips have a first notch formed on the surface in contact with the first cover plate; the side surround of the upper cover is in the form of a rectangular frame, and second notches are formed on two opposite sides of the side surround at positions corresponding to the first notch; the first notch is aligned with the second notch to form the exhaust port.

[0009] In some embodiments, a first lead-out terminal and a second lead-out terminal are bonded to the first cover plate, and the first lead-out terminal and the second lead-out terminal are used to be directly or indirectly electrically connected to the electronic device through leads.

[0010] In some embodiments, an input matching module and an output matching module are included, and the input matching module and the output matching module are encapsulated in the internal cavity of the encapsulation module; the input end of the electronic device is connected to the input matching module, and the input matching module provides an input matching signal for the electronic device; the output end of the electronic device is connected to the output matching module, and the output matching module provides an output matching signal for the electronic device.

[0011] In some embodiments, the input matching module is patched on a first ceramic substrate, the output matching module is patched on a second ceramic substrate, and the first substrate and the second substrate are patched on the base; the surface of the first substrate is provided with circuits and electrodes that match the input and output electrodes of the input matching module, and the surface of the second substrate is provided with circuits and electrodes that match the input and output electrodes of the output matching module.

[0012] In some embodiments, the input matching module and the output matching module are produced by using an IPD process; or, the input matching module and the output matching module are made of a thin film circuit.

[0013] On the other hand, the present application also provides an electronic device packaging method using the electronic device packaging structure as described above, comprising the following steps: sealing the electronic device after it is attached to the base;

[0014] In the capping step, an exhaust needle is placed in the exhaust port opened on the side wall of the packaging module to extract the gas in the internal cavity, and then the glue is cured; after the glue is cured, the exhaust needle is removed and the exhaust port is filled with glue.

[0015] In some embodiments, the preparation of the base comprises the following steps:

[0016] forming a substrate of a diamond / copper composite material;

[0017] Plating a first metal layer on the surface of the substrate;

[0018] Surface grinding, polishing and cleaning of the first metal layer;

[0019] Plating a second metal layer on the surface of the first metal layer;

[0020] The second metal layer is polished and cleaned.

[0021] The electronic device packaging structure and the electronic device packaging method of the present application have at least the following beneficial effects: in the electronic device packaging structure and the electronic device packaging method of the present application, the packaging module packages the electronic device in the internal cavity of the packaging module, and evacuates the internal cavity through the exhaust port on the packaging module. The internal cavity of the packaging module allows the electronic device packaged therein to be in a cavity environment rather than in a plastic packaging material, thereby solving the problem of radio frequency performance loss caused by a large dielectric constant of the plastic packaging material, and effectively improving device performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic structural diagram of an electronic device packaging structure according to an embodiment of the present application;

[0023] Figure 2 for Figure 1 A schematic diagram of the three-dimensional structure of the packaging module;

[0024] Figure 3 To adopt Figure 2 A schematic diagram of the decomposed structure after the electronic device is packaged by the packaging module in the packaging module;

[0025] Figure 4 A schematic cross-sectional structure diagram of a base of a packaging module according to an embodiment of the present invention;

[0026] Figure 5 A schematic diagram of the three-dimensional structure of a packaging module according to an embodiment of the application after removing the second cover plate and the upper cover;

[0027] Figure 6 A schematic diagram of the three-dimensional structure of a second cover plate of a packaging module according to an embodiment of the present invention;

[0028] Figure 7 A schematic diagram of the three-dimensional structure of a packaging module of an embodiment of the application with the upper cover removed;

[0029] Figure 8 A schematic diagram of the three-dimensional structure of an upper cover of a packaging module according to an embodiment of the present invention;

[0030] Fig. 9 A schematic diagram of the circuit structure of an input matching module in an electronic device packaging structure according to an embodiment of the present application;

[0031] Fig.10A schematic diagram of the circuit structure of an input / output matching module in an electronic device packaging structure according to an embodiment of the present application;

[0032] Fig.11 It is a schematic diagram of a cross-sectional structure of a base after the base is prepared in a method for manufacturing an electronic device packaging structure according to an embodiment of the present application;

[0033] Fig.12 It is a schematic diagram of the cross-sectional structure after the first metal layer is formed on the outer side of the substrate;

[0034] Fig.13 This is a schematic diagram of the cross-sectional structure of the first metal layer after grinding and polishing.

[0035] The reference numerals in the figures are as follows:

[0036] Packaging module 100;

[0037] Base 10; substrate 11, first metal layer 12, second metal layer 13; middle area 14; mounting groove 15;

[0038] A first cover plate 20;

[0039] A second cover plate 30; a frame strip 31 and a first notch 32;

[0040] Upper cover 40; cover plate 41, side wall 42, groove 43, second notch 44;

[0041] A first lead-out terminal 50;

[0042] A second lead-out terminal 60;

[0043] A first substrate 70;

[0044] A second substrate 80;

[0045] Input matching module 200;

[0046] Output matching module 300;

[0047] Electronic device 400. DETAILED DESCRIPTION

[0048] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the scheme in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments in the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0049] It should be noted that all directional indications in the embodiments of the present application (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0050] It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element at the same time. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0051] In addition, the descriptions of "first", "second", etc. in this application are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in this field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0052] See also Figure 1 An electronic device packaging structure of an embodiment of the present application includes a packaging module 100, an electronic device 400, an input matching module 200 and an output matching module 300; wherein the packaging module 100 has an internal cavity, and the electronic device 400, the input matching module 200 and the output matching module 300 are packaged in the internal cavity of the packaging module 100.

[0053] In the illustrated embodiment, the electronic device 400 is described by taking a GaN HEMT device as an example. The input end of the electronic device 400 is connected to the input matching circuit of the input matching module 200, and the input matching circuit is used to provide an input matching signal and gate power supply filtering for the electronic device 400; the output end of the electronic device 400 is connected to the input matching circuit of the output matching module 300, and the input matching circuit is used to provide an output matching signal and drain power supply filtering for the electronic device 400.

[0054] In the above-mentioned electronic device packaging structure, the packaging module 100 encapsulates the electronic device 400 and the input matching module 200 and the output matching module 300, thereby realizing input matching and output matching, so that the user no longer needs to perform secondary matching at the board level. Compared with the existing similar ceramic tube shell packaging devices, the input matching and output matching parts are saved, the occupied area of ​​the peripheral circuit is reduced, and thus the integration is improved to a certain extent.

[0055] See also Figure 2 and Figure 3 The packaging module 100 includes a base 10, a first cover plate 20, a second cover plate 30 and an upper cover 40. The base 10 is arranged at the bottom, and the electronic device 400, the input matching module 200 and the output matching module 300 are installed on the base 10; the first cover plate 20 and the second cover plate 30 are frame-shaped and are sequentially installed on the base 10, and the first cover plate 20 and the second cover plate 30 surround the electronic device 400, the input matching module 200 and the output matching module 300, and form an internal cavity on the base 10; the upper cover 40 is covered on the first cover plate 20 and the second cover plate 30, and the internal cavity is closed to realize the packaging of the electronic device 400, the input matching module 200 and the output matching module 300.

[0056] In the illustrated embodiment, the input matching module 200 and the output matching module 300 are flip-chip mounted on the first substrate 70 and the second substrate 80, respectively, and the first substrate 70 and the second substrate 80 are mounted on the base 10. The first substrate 70 and the second substrate 80 are ceramic substrates, and the surface of the first substrate 70 is provided with circuits and electrodes matching the input matching module 200, which are used to match the input and output electrodes of the input matching module 200; the surface of the second substrate 80 is provided with circuits and electrodes matching the output matching module 300, which are used to match the input and output electrodes of the output matching module 300. The input matching module 200 and the output matching module 300 are electrically connected through the first substrate 70 and the second substrate 80, respectively, which reduces the length of the bonding wire in the wire bonding process, reduces the parasitic inductance introduced by the wire bonding, and improves the performance of the GaN HEMT device at high frequencies.

[0057] The first lead-out terminal 50 and the second lead-out terminal 60 are bonded to the first cover plate 20. The first lead-out terminal 50 and the second lead-out terminal 60 may be the input lead-out terminal of the input matching module 200 and the output lead-out terminal of the output matching module 30, respectively. The first lead-out terminal 50 and the second lead-out terminal 60 may be interconnected with the electrodes of the input matching module 200 and the output matching module 300 on the base 10 by wire bonding.

[0058] In the illustrated embodiment, two first lead terminals 50 are led out from a side of the packaging module 100 close to the input matching module 200, which are respectively a gate DC power supply terminal and a gate RF input terminal; two second lead terminals 60 are led out from a side of the packaging module 100 close to the output matching module 300, which are respectively a drain DC power supply terminal and a drain RF output terminal.

[0059] In the illustrated embodiment, the first lead-out terminal 50 and the second lead-out terminal 60 adopt a flexible film circuit board, and the lead-out terminal on one side of the first lead-out terminal 50 and the second lead-out terminal 60 on both sides is cut into a shape so that the first lead-out terminal 50 and the second lead-out terminal 60 have different shapes to distinguish the first lead-out terminal 50 from the second lead-out terminal 60.

[0060] Please refer to Figure 4 and Figure 5 The base 10 of the packaging module 100 is made of diamond / copper composite materials (Diamond / Copper composites, Dia / Cu) and is plated with a metal layer on the surface, and is used for mounting the electronic device 400, the first substrate 70, and the second substrate 80.

[0061] The base 10 includes a diamond / copper composite material substrate 11 in the middle and a first metal layer 12 and a second metal layer 13 on both sides of the substrate 11. Figure 4 As shown in . Among them, the base 11 as the main body of the base 10 is made of diamond / copper composite material. Compared with the traditional flange material, the diamond / copper composite material has a higher thermal conductivity, greater than 500W / (m·K), and a low thermal expansion coefficient, about 5.5~6.5×10 -6 / K. For example, when the volume percentage of diamond is 35%, the thermal conductivity of the diamond / copper composite material is as high as 602W / (m·K), and the thermal conductivity is better than that of the traditional flange base, which can meet the thermal conductivity requirements of high-power electronic devices, such as gallium nitride devices, during operation. The base 10 using the diamond / copper composite material can be used as a heat sink for high-power chips, which can effectively reduce the chip junction temperature and improve the reliability and service life of the chip.

[0062] The substrate 11 of the diamond / copper composite material can be prepared by high-temperature high-pressure sintering (HTHP), vacuum hot-pressing sintering (VHPS), spark plasma sintering (SPS) and melt infiltration.

[0063] The first metal layer 12 covers the surface of the substrate 11, and can be formed on the surface of the substrate 11 by an electroplating process, and the metal with uneven outer surface is ground flat by a metal grinding process. The thickness of the first metal layer 12 is preferably between 7 μm and 10 μm, and the first metal layer 12 can be formed of metal materials such as nickel (Ni metal), titanium (Ti metal), titanium tungsten alloy (TiW alloy), etc.

[0064] The second metal layer 13 covers the surface of the first metal layer 12, and can be formed on the surface of the first metal layer 12 by electroplating or sputtering, and the flatness of the outer surface is ensured by grinding and cleaning. The thickness of the second metal layer 13 is preferably greater than 3 μm, and the second metal layer 13 can be formed of metal materials such as gold (Au metal), silver (Ag metal), titanium gold alloy (TiAu alloy), etc.

[0065] In the base 10, the first metal layer 12 (such as Ni metal) and the second metal layer 13 (such as Au metal) can improve the surface morphology of the base 11 of the diamond / copper composite material, thereby effectively improving the reliability of the patch.

[0066] The first cover plate 20 of the packaging module 100 is frame-shaped and is disposed above the diamond / copper composite material base 10. The first cover plate 20 is made of ceramic and is used to isolate the first lead-out terminal 50 and the second lead-out terminal 60 from the base 10.

[0067] To facilitate installation of the first cover plate 20 , the base 10 is recessed downward at the installation position of the first cover plate 20 to form an installation groove, and the lower end of the first cover plate 20 is assembled in the installation groove on the base 10 .

[0068] Please refer to Figure 6 and Figure 7 The second cover plate 30 is frame-shaped and made of ceramic. The second cover plate 30 is mounted on the first cover plate 20 and presses the first lead-out terminal 50 and the second lead-out terminal 60. The outer circumferential dimension of the second cover plate 30 is smaller than the outer circumferential dimension of the first cover plate 20, and the inner circumferential dimension of the second cover plate 30 is larger than the inner circumferential dimension of the first cover plate 20. In this way, the first cover plate 20 and the second cover plate 30 form a step around the area where the SMD electronic device 400, the first substrate 70, and the second substrate 80 are placed on the base 10.

[0069] More specifically, if Figure 6 As shown in , the second cover plate 30 is rectangular and is surrounded by four frame bars 31 , wherein two opposite frame bars 31 are formed with first notches 32 on the surfaces in contact with the first cover plate 20 .

[0070] like Figure 8As shown in , the circumferential dimension of the upper cover 40 is the same as the outer circumferential dimension of the first cover plate 20, that is, when the upper cover 40 is covered on the first cover plate 20, the outer edge of the upper cover 40 is aligned with the outer edge of the first cover plate 20 in the up-down direction. The upper cover 40 includes a top cover plate 41 and a side enclosure 42 extending downward from the edge of the cover plate 41. The side enclosure 42 is a double-walled side enclosure, and a groove 43 is formed between the double walls of the side enclosure 42. The height, thickness, shape and size of the groove 43 match those of the second cover plate 30, so that when the cover plate 40 is covered on the first cover plate 20, the second cover plate 30 is embedded in the groove 43, that is, the side enclosure 42 clamps the second cover plate 30 in the middle groove 43 from both inside and outside, so that the overall sealing can be improved.

[0071] In the illustrated embodiment, the side periphery 42 of the upper cover 40 is in the form of a square frame, and at the position corresponding to the first notch 32, the two opposite sides of the side periphery 42 are formed with a second notch 44, so that when the bottom cover 40 is covered on the first cover plate 20 for sealing, the first notch 32 and the second notch 44 are aligned to form an exhaust port from the inside to the outside of the package tube shell 100. The exhaust port formed by the first notch 32 and the second notch 44 is used for internal exhaust during the sealing process, which can prevent the upper cover 40, the second cover plate 30 and the first cover plate 20 from being unable to closely contact the bottom plate 10 due to the thermal expansion of the internal gas when heating the sealing, and also cause the upper cover 40 to shift, thereby causing the poor airtightness of the package tube shell 100 and the problem of difficult automated operation.

[0072] The first cover plate 20 , the second cover plate 30 and the upper cover 40 are all ceramic frames, which can be formed into a desired shape by ceramic sintering.

[0073] In the electronic device packaging structure of the present application, the electronic device 400 inside the packaging module 100, such as a radio frequency power amplifier, needs to control the device switch by controlling the gate voltage at the input part, and the device needs to input radio frequency power after it is turned on to provide an input source for power amplification. In the output part, it is necessary to provide a drain voltage so that the device is working under a normal drain voltage. Therefore, an input matching module 200 is provided on the input side of the electronic device 400, and the input matching module 200 is used to provide the electronic device 400 with a radio frequency input matching signal and a gate power supply filter; an output matching module 300 is provided on the input side of the electronic device 400, and the output matching module 300 is used to provide the electronic device 400 with a radio frequency output matching signal and a drain power supply filter. Through the input matching module 200 and the output matching module 300, the electronic device 400 completes matching and filtering in the packaging module 100, and there is no need to perform secondary matching and filtering in the external environment, which saves PCB area and improves the integration of the product.

[0074] The input matching module 200 and the output matching module 300 are usually produced and processed using an IPD (Integrated Passive Device) process. Alternatively, if the product is used in a non-high-frequency scenario, the input matching module 200 and the output matching module 300 can use a thin-film circuit instead of an IPD to reduce costs.

[0075] The input matching module 200 includes an input bias circuit and an input matching circuit for providing a bias voltage, and the input matching circuit is connected between the output end of the input bias circuit and the input end of the electronic device 400. The output matching module 300 includes an output bias circuit and an output matching circuit for providing a bias voltage, and the output matching circuit is connected between the output end of the output bias circuit and the output end of the electronic device 400.

[0076] See also Fig. 9 , a typical circuit example of the input matching module 200 is shown in the figure. The input bias circuit is shown in the dashed box above. The third inductor L3 is a gate bias inductor. The third inductor L3 is connected in series with the second resistor R2 to provide a high impedance state for the RF signal to prevent the RF signal from being fed back to the DC bias input port during input, resulting in unstable DC bias; at the same time, two or more groups of capacitors are arranged in parallel, such as the third capacitor C3 and the fourth capacitor C4, which are used to filter stray signals of different frequencies and play a filtering role. The input matching circuit is shown in the dotted box below. A second capacitor C2 is set between the output end of the input bias circuit and the RF input port. The second capacitor C2 is a DC blocking capacitor used to isolate the DC bias, so as to prevent the DC signal of the input bias circuit from being fed back to the RF input port RF in when input to the input matching circuit, resulting in unstable RF input; the first inductor L1, the first capacitor C1, and the first resistor R1 are a matching circuit. By adjusting the first inductor L1, the first capacitor C1, and the first resistor R1, the electronic device 400 can be in the target working state; the fourth inductor L4, the fifth capacitor C5, the fifth inductor L5, and the sixth capacitor C6 are used to form an LC network to realize a broadband amplification function.

[0077] See also Fig.10 , a typical circuit example of the output matching module 300 is shown in the figure. As shown in the upper dotted box, compared with the input bias circuit of the input matching module 200, the output bias circuit of the output matching module 300 lacks the third inductor L3 and the second resistor R2, and the λ / 4 wavelength line is used to open the RF signal to prevent the RF signal from being fed back into the DC bias. The rest is consistent with the input bias circuit. The output matching circuit is shown in the lower dotted box, and the output matching circuit is consistent with the input bias circuit.

[0078] In addition, the input matching circuit of the input matching module 200 and the output matching circuit of the output matching module 300 can be replaced from a complete matching circuit to a pre-matching circuit according to actual needs to adapt to different needs.

[0079] The present application also provides a method for manufacturing the above-mentioned electronic device packaging structure, comprising the following steps:

[0080] S1, preparing the base 10, the first cover plate 20, the second cover plate 30 and the upper cover 40 respectively.

[0081] In the process of preparing the base 10, after forming the base 11 of the diamond / copper composite material, the surface of the base 11 is plated with a first metal layer 12, so that the first metal layer 12 covers the unevenness of the surface of the base 11 formed by the diamond / copper composite material, such as Fig.11 and Fig.12 Then perform surface grinding and polishing and plasma cleaning (plasma cleaning) to reduce the thickness of the first metal layer 12 and ensure that the surface of the diamond / copper composite substrate 11 has a good flatness and cleanliness, the completed cross-sectional structure as shown Fig.13 As shown in , the subsequent gold plating and patch quality are guaranteed. After completing the above steps, the second metal layer 13 is plated by chemical gold plating. After the second metal layer 13 is gold plated, it is polished and plasma cleaned for the second time. The cross-sectional structure after completion is as shown in Figure 4 as shown in .

[0082] S2, installing the first cover plate 20 onto the base 10.

[0083] S3, patch input matching module 200 onto first substrate 70, patch output matching module 300 onto second substrate 80; patch electronic device 400, first substrate 70, second substrate 80 onto base 10, and wire bond the input end of electronic device 400 to first substrate 70, the output end of electronic device 400 to second substrate 80, the first substrate 70 to first lead-out terminal 50, the second substrate 80 to second lead-out terminal 60. The process connects the electrodes of electronic device 200 to first lead-out terminal 50 and second lead-out terminal 60.

[0084] In the patch process, if thermal conductivity is required, nano silver glue can be used for patching. In this case, the upper surface of the base 10 needs to be roughened twice using chemical agents before patching to ensure the adhesion effect of the nano silver glue and ensure good heat dissipation performance. If bonding firmness is required, solder sheets can be used for eutectic soldering. In this case, there is no need to roughen the base 10 twice, and the requirements of heat dissipation and bonding firmness can be met at the same time.

[0085] S4, bonding the first lead-out terminal 50 and the second lead-out terminal 60 to the first cover plate 20 and leading them to the outside.

[0086] S5, installing the second cover plate 30 onto the first cover plate 20 and pressing the first lead-out terminal 50 and the second lead-out terminal 60;

[0087] S6, installing the upper cover 40 onto the first cover plate 20 for sealing.

[0088] The first cover plate 20 and the second cover plate 30 form a stepped structure, and the upper cover 40 is designed with an embedded groove 43. The groove 43 matches the stepped structure formed by the first cover plate 20 and the second cover plate 30 to form a stable interlocking structure for limiting the position during sealing and improving the airtightness of the package.

[0089] In the capping process, glue is applied to the portion of the upper cover 40 except the groove 44, and the exhaust needle is placed in the exhaust port formed by the first notch 32 and the second notch 44 to extract the gas in the internal cavity, and then the ceramic upper cover 40 is embedded in the second cover plate 30 for heating and curing. During heating and curing, it is necessary to use a pressing block placed on the upper cover 40 so that the upper cover 40 is tightly combined with the bottom. After the glue is cured, the exhaust needle is removed and the exhaust port is filled with glue again to complete the secondary seal. Exhausting the internal cavity can avoid the problem that when heating and capping, the gas in the internal cavity expands due to heat, causing the upper cover 40 to be unable to closely contact the bottom and the upper cover 40 to shift, resulting in poor airtightness of the tube shell and difficult automated operation.

[0090] In summary, the electronic device and the manufacturing method thereof of the present application have at least the following advantages:

[0091] (1) The packaging module encapsulates the electronic device in the internal cavity of the packaging module, and evacuates the internal cavity through the exhaust port on the packaging module. The internal cavity of the packaging module allows the electronic device encapsulated inside to be in a cavity environment rather than in a plastic packaging material. Compared with existing GaN+IPD products of the same type in plastic packaging, the problem of radio frequency performance loss caused by the large dielectric constant of the plastic packaging material is solved, and the device performance is effectively improved.

[0092] (2) The bottom of the packaging module is the base. The base 10 uses a diamond / copper composite material as a substrate. Compared with the traditional flange material, the diamond / copper composite material has a higher thermal conductivity and better thermal conductivity than the traditional flange base. It can meet the thermal conductivity requirements of the high-power electronic device 400 when working, improve the heat dissipation capacity of the overall device, and also improve the overall reliability and application scenarios. In addition, the manufacturing process of the diamond / copper composite base also solves the problem of the base patch void rate of the packaging module.

[0093] (3) The packaging module encapsulates the electronic devices and the input matching module and the output matching module, thus realizing input matching and output matching, and eliminating the need for users to perform secondary matching at the board level. Compared with existing similar ceramic tube package devices, it saves the input matching and output matching parts, reduces the area occupied by the peripheral circuits, and thus improves the integration to a certain extent.

[0094] (4) The input matching module and the output matching module are flip-chip mounted on the first substrate and the second substrate respectively, and the first substrate and the second substrate are mounted on the base. The input matching module and the output matching module are electrically connected through the first substrate and the second substrate respectively. In this way, the new packaging stacking design reduces the length of the bonding wire in the wire bonding process, reduces the parasitic inductance introduced by the wire bonding, and improves the performance of the product at high frequencies.

[0095] (5) The special design of the input matching module and the output matching module ensures the stable operation of the device while achieving broadband application of the device, thus broadening the application scenarios of the product.

[0096] The above description is only a partial or preferred embodiment of the present application. Neither the text nor the drawings can limit the scope of protection of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the overall concept of the present application, or direct / indirect application in other related technical fields are included in the scope of protection of the present application.

Claims

1. An electronic device packaging structure, characterized in that: The invention comprises a packaging module (100) and an electronic device (400), wherein the electronic device (400) is packaged in an internal cavity of the packaging module (100); a base (10) of the packaging module (100) adopts a substrate (11) of a diamond / copper composite material, and an exhaust port connecting the internal cavity and the outside is provided on a ceramic side wall of the packaging module (100).

2. The electronic device packaging structure according to claim 1, characterized in that: A first metal layer (12) is formed on the surface of the substrate (11), and a second metal layer (13) is formed on the surface of the first metal layer (12).

3. The electronic device packaging structure according to claim 1, characterized in that: The packaging module (100) further comprises a first ceramic cover plate (20), a second cover plate (30) and an upper cover (40); the first cover plate (20) and the second cover plate (30) are frame-shaped; the first cover plate (20) is embedded and mounted on the base (10); the second cover plate (30) is mounted on the first cover plate (20); the outer circumferential dimension of the second cover plate (30) is smaller than the outer circumferential dimension of the first cover plate (20); the inner circumferential dimension of the second cover plate (30) is larger than the inner circumferential dimension of the first cover plate (20); the upper cover (40) is covered on the first cover plate (20) and the second cover plate (30), and the second cover plate (30) is embedded in a groove (43) formed by a side periphery (42) of the upper cover (40).

4. The electronic device packaging structure according to claim 3, characterized in that: The second cover plate (30) is in the form of a rectangular frame, comprising four frame strips (31) enclosed in sequence, wherein two opposite frame strips (31) are provided with first notches (32) on surfaces in contact with the first cover plate (20); the side surround (42) of the upper cover (40) is in the form of a rectangular frame, and two opposite sides of the side surround (42) are provided with second notches (44) at positions corresponding to the first notches (32); the first notches (32) and the second notches (44) are aligned to form the exhaust port.

5. The electronic device packaging structure according to claim 3, characterized in that: A first lead-out terminal (50) and a second lead-out terminal (60) are bonded to the first cover plate (20); the first lead-out terminal (50) and the second lead-out terminal (60) are used to be directly or indirectly electrically connected to the electronic device (400) via leads.

6. The electronic device packaging structure according to claim 1, characterized in that: The electronic device (400) comprises an input matching module (200) and an output matching module (300), wherein the input matching module (200) and the output matching module (300) are encapsulated in the internal cavity of the encapsulation module (100); the input end of the electronic device (400) is connected to the input matching module (200), and the input matching module (200) provides an input matching signal for the electronic device (400); and the output end of the electronic device (400) is connected to the output matching module (300), and the output matching module (300) provides an output matching signal for the electronic device (400).

7. The electronic device packaging structure according to claim 6, characterized in that: The input matching module (200) is mounted on a first ceramic substrate (70), the output matching module (300) is mounted on a second ceramic substrate (80), and the first substrate (70) and the second substrate (80) are mounted on the base (10); the surface of the first substrate (70) is provided with circuits and electrodes that match the input and output electrodes of the input matching module (200), and the surface of the second substrate (80) is provided with circuits and electrodes that match the input and output electrodes of the output matching module (300).

8. The electronic device packaging structure according to claim 5, characterized in that: The input matching module (200) and the output matching module (300) are produced by using an IPD process; or, the input matching module (200) and the output matching module (300) are made of a thin film circuit.

9. An electronic device packaging method using the electronic device packaging structure according to any one of claims 1 to 8, characterized in that: The method comprises the following steps: after the electronic device (400) is attached to the base (10), a cover is provided on the base (10); In the capping step, an exhaust needle is placed on the side wall of the packaging module (100) to open an exhaust port to extract the gas in the internal cavity, and then the glue is cured; after the glue is cured, the exhaust needle is removed and the exhaust port is filled with glue.

10. The electronic device packaging method according to claim 9, characterized in that: The preparation of the base (10) comprises the following steps: forming a substrate (11) of a diamond / copper composite material; Plating a first metal layer (12) on the surface of the substrate (11); Surface grinding, polishing and cleaning of the first metal layer (12); Plating a second metal layer (13) on the surface of the first metal layer (12); The second metal layer (13) is polished and cleaned.

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